WO2011139501A3 - Pad conditioning sweep torque modeling to achieve constant removal rate - Google Patents

Pad conditioning sweep torque modeling to achieve constant removal rate Download PDF

Info

Publication number
WO2011139501A3
WO2011139501A3 PCT/US2011/032319 US2011032319W WO2011139501A3 WO 2011139501 A3 WO2011139501 A3 WO 2011139501A3 US 2011032319 W US2011032319 W US 2011032319W WO 2011139501 A3 WO2011139501 A3 WO 2011139501A3
Authority
WO
WIPO (PCT)
Prior art keywords
polishing pad
removal rate
pad conditioning
achieve constant
conditioning
Prior art date
Application number
PCT/US2011/032319
Other languages
French (fr)
Other versions
WO2011139501A2 (en
Inventor
Sivakumar Dhandapani
Gregory E. Menk
Sang J. Cho
Jason Garcheung Fung
Christopher D. Cocca
Stan D. Tsai
Shou-Sung Chang
Charles C. Garretson
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN2011800073435A priority Critical patent/CN102782814A/en
Priority to US13/129,351 priority patent/US20130122783A1/en
Priority to JP2013507995A priority patent/JP2013526057A/en
Priority to KR1020127021075A priority patent/KR20130059312A/en
Publication of WO2011139501A2 publication Critical patent/WO2011139501A2/en
Publication of WO2011139501A3 publication Critical patent/WO2011139501A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces

Abstract

A method and apparatus for conditioning a polishing pad in a CMP system is provided. In one embodiment, a method for conditioning a polishing pad includes applying a down force to the conditioning disk that urges the conditioning disk against the polishing pad, measuring a torque required to sweep the conditioning disk across the polishing pad, determining a change in down force by comparing the measured torque to a model force profile (MFP), and adjusting the down force that the conditioning disk applies against the polishing pad in response to the determined change.
PCT/US2011/032319 2010-04-30 2011-04-13 Pad conditioning sweep torque modeling to achieve constant removal rate WO2011139501A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2011800073435A CN102782814A (en) 2010-04-30 2011-04-13 Pad conditioning sweep torque modeling to achieve constant removal rate
US13/129,351 US20130122783A1 (en) 2010-04-30 2011-04-13 Pad conditioning force modeling to achieve constant removal rate
JP2013507995A JP2013526057A (en) 2010-04-30 2011-04-13 Pad-adjusted sweep torque modeling to achieve constant removal rate
KR1020127021075A KR20130059312A (en) 2010-04-30 2011-04-13 Pad conditioning sweep torque modeling to achieve constant removal rate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33030010P 2010-04-30 2010-04-30
US61/330,300 2010-04-30

Publications (2)

Publication Number Publication Date
WO2011139501A2 WO2011139501A2 (en) 2011-11-10
WO2011139501A3 true WO2011139501A3 (en) 2012-02-23

Family

ID=44904300

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/032319 WO2011139501A2 (en) 2010-04-30 2011-04-13 Pad conditioning sweep torque modeling to achieve constant removal rate

Country Status (6)

Country Link
US (1) US20130122783A1 (en)
JP (1) JP2013526057A (en)
KR (1) KR20130059312A (en)
CN (1) CN102782814A (en)
TW (1) TWI568534B (en)
WO (1) WO2011139501A2 (en)

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US8626458B2 (en) * 2009-11-05 2014-01-07 Vibration Technologies, Llc Method and system for measuring the dynamic response of a structure during a machining process
JP5511600B2 (en) * 2010-09-09 2014-06-04 株式会社荏原製作所 Polishing equipment
US8758085B2 (en) * 2010-10-21 2014-06-24 Applied Materials, Inc. Method for compensation of variability in chemical mechanical polishing consumables
JP5927083B2 (en) 2012-08-28 2016-05-25 株式会社荏原製作所 Dressing process monitoring method and polishing apparatus
CN103531509A (en) * 2013-09-26 2014-01-22 苏州经贸职业技术学院 Method for precisely positioning circle center on workbench
US9312142B2 (en) * 2014-06-10 2016-04-12 Globalfoundries Inc. Chemical mechanical polishing method and apparatus
GB201417861D0 (en) * 2014-10-09 2014-11-26 Rolls Royce Plc Abrasive processing method
JP6307428B2 (en) * 2014-12-26 2018-04-04 株式会社荏原製作所 Polishing apparatus and control method thereof
JP6444785B2 (en) * 2015-03-19 2018-12-26 株式会社荏原製作所 Polishing apparatus, control method therefor, and dressing condition output method
KR101695805B1 (en) * 2016-08-18 2017-01-12 정우엔텍 주식회사 CMP equipment conditioner structure
JP6357260B2 (en) * 2016-09-30 2018-07-11 株式会社荏原製作所 Polishing apparatus and polishing method
US10675732B2 (en) * 2017-04-18 2020-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for CMP pad conditioning
JP7050152B2 (en) * 2017-11-16 2022-04-07 アプライド マテリアルズ インコーポレイテッド Predictive filter for monitoring polishing pad wear rate
US10857651B2 (en) * 2017-11-20 2020-12-08 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus of chemical mechanical polishing and operating method thereof
US11292101B2 (en) * 2017-11-22 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing apparatus and method
US11389928B2 (en) * 2017-11-30 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for conditioning polishing pad
KR20200043214A (en) * 2018-10-17 2020-04-27 주식회사 케이씨텍 Conditioner of chemical mechanical polishing apparatus
US11794305B2 (en) 2020-09-28 2023-10-24 Applied Materials, Inc. Platen surface modification and high-performance pad conditioning to improve CMP performance
CN112476227A (en) * 2020-11-27 2021-03-12 华虹半导体(无锡)有限公司 Chemical mechanical polishing device
CN117260407B (en) * 2023-11-20 2024-03-12 铭扬半导体科技(合肥)有限公司 Detection method of polishing equipment

Citations (4)

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US6306008B1 (en) * 1999-08-31 2001-10-23 Micron Technology, Inc. Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization
US20020106971A1 (en) * 2001-02-06 2002-08-08 Rodriquez Jose Omar Method and apparatus for conditioning a polishing pad
US6953382B1 (en) * 2004-06-24 2005-10-11 Novellus Systems, Inc. Methods and apparatuses for conditioning polishing surfaces utilized during CMP processing
US20090318060A1 (en) * 2008-06-23 2009-12-24 Applied Materials, Inc. Closed-loop control for effective pad conditioning

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JP3031345B2 (en) * 1998-08-18 2000-04-10 日本電気株式会社 Polishing apparatus and polishing method
JP4030247B2 (en) * 1999-05-17 2008-01-09 株式会社荏原製作所 Dressing device and polishing device
US20040182721A1 (en) * 2003-03-18 2004-09-23 Applied Materials, Inc. Process control in electro-chemical mechanical polishing
US6517414B1 (en) * 2000-03-10 2003-02-11 Appied Materials, Inc. Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus
US7101799B2 (en) * 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
US7011566B2 (en) * 2002-08-26 2006-03-14 Micron Technology, Inc. Methods and systems for conditioning planarizing pads used in planarizing substrates
US20050061674A1 (en) * 2002-09-16 2005-03-24 Yan Wang Endpoint compensation in electroprocessing
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DE10324429B4 (en) * 2003-05-28 2010-08-19 Advanced Micro Devices, Inc., Sunnyvale Method for operating a chemical-mechanical polishing system by means of a sensor signal of a polishing pad conditioner
US7052371B2 (en) * 2003-05-29 2006-05-30 Tbw Industries Inc. Vacuum-assisted pad conditioning system and method utilizing an apertured conditioning disk
US6931330B1 (en) * 2003-06-30 2005-08-16 Lam Research Corporation Methods for monitoring and controlling chemical mechanical planarization
DE10345381B4 (en) * 2003-09-30 2013-04-11 Advanced Micro Devices, Inc. A method and system for controlling chemical mechanical polishing using a sensor signal from a pad conditioner
US7040958B2 (en) * 2004-05-21 2006-05-09 Mosel Vitelic, Inc. Torque-based end point detection methods for chemical mechanical polishing tool which uses ceria-based CMP slurry to polish to protective pad layer
US20070212983A1 (en) * 2006-03-13 2007-09-13 Applied Materials, Inc. Apparatus and methods for conditioning a polishing pad
US7840305B2 (en) * 2006-06-28 2010-11-23 3M Innovative Properties Company Abrasive articles, CMP monitoring system and method
US8065031B2 (en) * 2006-09-14 2011-11-22 Tokyo Seimitsu Co., Ltd Polishing end point detection method utilizing torque change and device thereof
DE102007015503B4 (en) * 2007-03-30 2013-03-21 Globalfoundries Inc. Method and system for controlling chemical mechanical polishing by taking into account zone specific substrate data
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US8221193B2 (en) * 2008-08-07 2012-07-17 Applied Materials, Inc. Closed loop control of pad profile based on metrology feedback
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Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US6306008B1 (en) * 1999-08-31 2001-10-23 Micron Technology, Inc. Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization
US20020106971A1 (en) * 2001-02-06 2002-08-08 Rodriquez Jose Omar Method and apparatus for conditioning a polishing pad
US6953382B1 (en) * 2004-06-24 2005-10-11 Novellus Systems, Inc. Methods and apparatuses for conditioning polishing surfaces utilized during CMP processing
US20090318060A1 (en) * 2008-06-23 2009-12-24 Applied Materials, Inc. Closed-loop control for effective pad conditioning

Also Published As

Publication number Publication date
KR20130059312A (en) 2013-06-05
TW201206629A (en) 2012-02-16
CN102782814A (en) 2012-11-14
JP2013526057A (en) 2013-06-20
US20130122783A1 (en) 2013-05-16
TWI568534B (en) 2017-02-01
WO2011139501A2 (en) 2011-11-10

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