WO2011139137A1 - Device with carbon nanotube - Google Patents
Device with carbon nanotube Download PDFInfo
- Publication number
- WO2011139137A1 WO2011139137A1 PCT/MY2011/000034 MY2011000034W WO2011139137A1 WO 2011139137 A1 WO2011139137 A1 WO 2011139137A1 MY 2011000034 W MY2011000034 W MY 2011000034W WO 2011139137 A1 WO2011139137 A1 WO 2011139137A1
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- WO
- WIPO (PCT)
- Prior art keywords
- carbon nanotubes
- nanotubes
- fingers
- conductive
- interdigital
- Prior art date
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 55
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 55
- 239000002071 nanotube Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000003990 capacitor Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 238000009360 aquaculture Methods 0.000 abstract description 3
- 244000144974 aquaculture Species 0.000 abstract description 3
- 230000005685 electric field effect Effects 0.000 abstract description 3
- 238000012544 monitoring process Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
Definitions
- the present invention relates to device utilizing carbon nanotubes wherein the nanotubes are grown vertically.
- Carbon nanotubes have been extensively studied for its material properties usage which includes its unique structural, chemical, mechanical, thermal, optical, optoelectronic and electronic properties. These nanotubes are unique one dimensional quantum wires with a diameter from a few nanometers and length up to hundreds of microns which gives an extremely high surface to volume ratio. The nanotubes has shown great promise in a variety of application areas namely, electronics, energy, mechanical, sensors, biological, field emission and lighting.
- carbon nanotubes are very sensitive to the presence of chemical species in the surrounding environment where it has the ability to bond with atoms due to chemical absorption as well as changing significantly in the electronic band structure and conductance. Therefore, the nanotubes are able to detect chemicals or small biomolecules.
- nanotubes are fabricated as interdigitated sensor or built within a capacitor and are typically lain lateral or in plane with the device.
- a prior art includes the use of carbon nanotubes as a sensor to determine the presence of unwanted environmental agent with the use of a plurality of carbon nanotubes.
- the sensor comprises a first and second conducting layer having alternatively interdigitated fingers.
- the plurality of carbon nanotubes are coupled between each of the interdigitated fingers.
- the major disadvantage of this method is, the nanotubes structures are laid laterally or in plane with the device and the nanotubes need to be extended across to connect two or more fingers. The device too operates based on the change in electrical resistance method.
- Another prior art listed a method of fabricating the carbon nanotubes within a capacitor.
- the capacitor includes, a lower electrode including a patterned conductive layer and a plurality of nanotubes formed on the patterned conductive layer in the shape of whiskers without using a catalytic layer, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer.
- the method includes the steps of forming a conductive layer for forming a lower electrode followed by forming a nanotube array including a plurality of nanotubes formed on the conductive layer without using a catalytic layer, then forming a dielectric layer on the nanotube array and forming an upper electrode on the dielectric layer.
- the disadvantages of this method includes the requirement of the nanotubes to be connected to top and bottom electrodes, the carbon nanotubes are all enclosed in the parallel plate type capacitor and the device cannot be operated as a sensor.
- the present invention is made in view of the prior arts described above where the carbon nanotubes are grown in interdigitated structure and are integrated into a interdigital device which can operate as a sensor for application in areas of agriculture, aquaculture, environmental monitoring and biomedical.
- the present invention discloses a device with carbon nanotubes and a method for fabricating thereof using nanotube deposition method where in this process the nanotubes are grown vertically in interdigitated structure and are integrated into an interdigital device where this device can then be operated based on the fringing electric field effect.
- At least two conductive fingers spaced apart act as electrodes of capacitor.
- a plurality of carbon nanotubes is vertically formed on top of conductive fingers or between conductive fingers.
- Carbon nanotubes have permittivity which changes according to environment, hence affecting capacitance measured. Different embodiments of device having the nanotubes placed in trench are shown.
- the carbon nanotube interdigital device can operate as a sensor for application in areas of agriculture, aquaculture, environmental monitoring and biomedical.
- Fig. 1 is an integrated device with integrated vertical carbon nanotube structures fabricated as described according to this invention.
- Fig. 2A is a cross-sectional drawing of the carbon nanotubes fabricated in between interdigitated fingers.
- Fig. 2B is a cross-sectional drawing of the carbon nanotubes fabricated on top of the interdigitated fingers.
- Fig. 2C is a cross-sectional drawing of the carbon nanotubes fabricated in between and on top of the interdigital fingers.
- Fig. 3 is a flow chart showing the carbon nanotubes device fabrication process.
- Fig. 4 is a cross-sectional drawing of the interdigital carbon nanotube device operating on fringing electric fields effect.
- Fig. 5A is a cross-sectional drawing of the carbon nanotubes fabricated in a trench etched into the insulating layer.
- Fig. 5B is a cross-sectional drawing of the carbon nanotubes fabricated in a trench etched into the substrate.
- Fig. 6 is a cross-sectional drawing of the carbon nanotubes fabricated in trenches affecting both the top and bottom fringing electric fields.
- the invention involves a device with carbon nanotubes and a method to fabricate carbon nanotubes [20] structures which is then integrated into an interdigital device.
- This device will consist of an array of conductive interdigitated fingers [22] with an array of vertical carbon nanotubes [20] as shown in Fig. 1.
- These carbon nanotubes [20] are grown or fabricated on the insulating layer [24] surface, between the fingers or on the fingers, as shown in Fig. 2A to Fig. 2C.
- To fabricate the device firstly a layer of insulating material [24] is deposited onto a handle substrate [26], as described in Fig. 3.
- the insulating layer [24] can be oxide, nitride or polymer based materials, while the handle substrate [26] for the device can be from a wide selection of material which can be silicon based, glass, metal or polymer.
- the insulating layer [24] is required in order to form a passivation layer between the electrical device and substrate [26] to eliminate electrical losses and stray capacitances.
- the interdigitated finger [22] structures are then selectively formed on top of the insulating film [24] and can be made up of any conductive type of materials such as doped silicon, metals and conductive polymer.
- the key feature of this method is the ability of the carbon nanotubes to be fabricated vertically.
- Metal catalyst [30] is deposited selectively on a desired area for forming carbon nanotube.
- Carbon nanotubes [20] can be formed on conductive fingers [22] or between conductive fingers [22].
- the present invention uses the chemical vapor deposition method where deposition is made onto a metal catalyst namely iron, nickel or cobalt.
- other nanotube deposition methods can also be used as long as the nanotubes are formed vertical in nature.
- the performance of the carbon nanotubes [20] can be enhanced by chemical functionalization which allows the structure to be more sensitive to a particular agent.
- the completed interdigital device with integrated carbon nanotube [20] structure can then be operated based on the fringing electric effect [28], as shown in Fig. 4, with a capacitance output.
- At least two conductive fingers act as electrodes of capacitor. These nanotubes are connected to a maximum of one electrode or finger only.
- the electrical permittivity of the device will result in a capacitance change which can be represented by a simple capacitive equation.
- C £ r . ⁇ 0 . A /d
- C is the device capacitance
- ⁇ ⁇ is the dielectric permittivity of carbon nanotubes [20]
- ⁇ 0 is the dielectric constant
- A the area of the interdigitated fingers [22]
- d is the gap between the fingers.
- the carbon nanotubes permittivity changes according to environment. With in-plane nanotube finger structure described above, most of the change in the fringing field only occurs at the top structure of the interdigital device. There is a high potential of increasing the performance or sensitivity of the overall device by having nanotubes similar to Fig. 5A and Fig. 5B which are formed out of plane with respect to the interdigital fingers [22].
- Trenching of substrate [36] or insulating material [34] can be done by wet or dry etching.
- thin layer of metal catalyst is deposited into the trenches.
- the carbon nanotubes [20] will now play a role in effecting the change in the fringing field [28] at both top and bottom halves of the device as shown in Fig. 6.
- the carbon nanotubes [20] will now play a role in effecting the change in the fringing field [28] at both top and bottom halves of the device as shown in Fig. 6.
- the invention disclosed a device with vertical carbon nanotubes [20], grown vertically which can integrated into an interdigital device which can then be operated based on fringing electric field effect. It is the combination of the above features and its technical advantages give rise to the uniqueness of such invention. Although the descriptions above contain much specificity, these should not be construed as limiting the scope of the embodiment but as merely providing illustrations of some of the presently preferred embodiments.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The present invention provides a device with carbon nanotubes wherein the nanotubes (20) are grown vertically onto the substrate surface and in-between the fingers of an interdigital structure. The completed array of conductive interdigitated fingers with a plurality of the vertical carbon nanotubes are then integrated as an interdigital device where this device operates based on the fringing electric field effects. At least two conductive fingers (22) spaced apart act as electrodes of capacitor. A plurality of carbon nanotubes (20) is vertically formed on top of conductive fingers or between conductive fingers. Carbon nanotubes have permittivity which changes according to environment, hence affecting capacitance measured. Different embodiments of device having the nanotubes placed in trench are shown. The carbon nanotube interdigital device can operate as a sensor for application in areas of agriculture, aquaculture, environmental monitoring and biomedical.
Description
DEVICE WITH CARBON NANOTUBE
The present invention relates to device utilizing carbon nanotubes wherein the nanotubes are grown vertically.
BACKGROUND ART
Carbon nanotubes have been extensively studied for its material properties usage which includes its unique structural, chemical, mechanical, thermal, optical, optoelectronic and electronic properties. These nanotubes are unique one dimensional quantum wires with a diameter from a few nanometers and length up to hundreds of microns which gives an extremely high surface to volume ratio. The nanotubes has shown great promise in a variety of application areas namely, electronics, energy, mechanical, sensors, biological, field emission and lighting.
In sensing application, carbon nanotubes are very sensitive to the presence of chemical species in the surrounding environment where it has the ability to bond with atoms due to chemical absorption as well as changing significantly in the electronic band structure and conductance. Therefore, the nanotubes are able to detect chemicals or small biomolecules.
There are several methods to produce carbon nanotubes. Presently, these nanotubes are fabricated as interdigitated sensor or built within a capacitor and are typically lain lateral or in plane with the device.
A prior art includes the use of carbon nanotubes as a sensor to determine the presence of unwanted environmental agent with the use of a plurality of carbon nanotubes. The sensor comprises a first and second conducting layer having alternatively interdigitated fingers. The plurality of carbon nanotubes are coupled between each of the interdigitated fingers. As an interdigital device with integrated carbon nanotubes, the major disadvantage of this method is, the nanotubes structures are laid laterally or in plane with the device and the nanotubes need to be extended across to connect two or more fingers. The device too operates based on the change in electrical resistance method.
Another prior art listed a method of fabricating the carbon nanotubes within a capacitor. The capacitor includes, a lower electrode including a patterned conductive layer and a plurality of nanotubes formed on the patterned conductive layer in the shape of whiskers without using a catalytic layer, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer. The method includes the steps of forming a conductive layer for forming a lower electrode followed by forming a nanotube array including a plurality of nanotubes formed on the conductive layer without using a catalytic layer, then forming a dielectric layer on the nanotube array and forming an upper electrode on the dielectric layer. The disadvantages of this method includes the requirement of the nanotubes to be connected to top and bottom electrodes, the carbon nanotubes are all enclosed in the parallel plate type capacitor and the device cannot be operated as a sensor.
The present invention is made in view of the prior arts described above where the carbon nanotubes are grown in interdigitated structure and are integrated into a interdigital device which can operate as a sensor for application in areas of agriculture, aquaculture, environmental monitoring and biomedical.
SUMMARY OF INVENTION
The present invention discloses a device with carbon nanotubes and a method for fabricating thereof using nanotube deposition method where in this process the nanotubes are grown vertically in interdigitated structure and are integrated into an interdigital device where this device can then be operated based on the fringing electric field effect. At least two conductive fingers spaced apart act as electrodes of capacitor. A plurality of carbon nanotubes is vertically formed on top of conductive fingers or between conductive fingers. Carbon nanotubes have permittivity which changes according to environment, hence affecting capacitance measured. Different embodiments of device having the nanotubes placed in trench are shown. The carbon nanotube interdigital device can operate as a sensor for application in areas of agriculture, aquaculture, environmental monitoring and biomedical.
BRIEF DESCRIPTION OF DRAWINGS
Fig. 1 is an integrated device with integrated vertical carbon nanotube structures fabricated as described according to this invention.
Fig. 2A is a cross-sectional drawing of the carbon nanotubes fabricated in between interdigitated fingers.
Fig. 2B is a cross-sectional drawing of the carbon nanotubes fabricated on top of the interdigitated fingers.
Fig. 2C is a cross-sectional drawing of the carbon nanotubes fabricated in between and on top of the interdigital fingers.
Fig. 3 is a flow chart showing the carbon nanotubes device fabrication process. Fig. 4 is a cross-sectional drawing of the interdigital carbon nanotube device operating on fringing electric fields effect.
Fig. 5A is a cross-sectional drawing of the carbon nanotubes fabricated in a trench etched into the insulating layer.
Fig. 5B is a cross-sectional drawing of the carbon nanotubes fabricated in a trench etched into the substrate.
Fig. 6 is a cross-sectional drawing of the carbon nanotubes fabricated in trenches affecting both the top and bottom fringing electric fields.
DESCRIPTION OF EMBODIMENTS
Hereinafter, the present invention is described in detail.
The invention involves a device with carbon nanotubes and a method to fabricate carbon nanotubes [20] structures which is then integrated into an interdigital device. This device will consist of an array of conductive interdigitated fingers [22] with an array of vertical carbon nanotubes [20] as shown in Fig. 1. These carbon nanotubes [20] are grown or fabricated on the insulating layer [24] surface, between the fingers or on the fingers, as shown in Fig. 2A to Fig. 2C. To fabricate the device, firstly a layer of insulating material [24] is deposited onto a handle substrate [26], as described in Fig. 3. The insulating layer [24] can be oxide, nitride or polymer based materials, while the handle substrate [26] for the device can be from a wide selection of material which can be silicon based, glass, metal or polymer. The insulating layer [24] is required in order to form a passivation layer between the
electrical device and substrate [26] to eliminate electrical losses and stray capacitances. The interdigitated finger [22] structures are then selectively formed on top of the insulating film [24] and can be made up of any conductive type of materials such as doped silicon, metals and conductive polymer.
The key feature of this method is the ability of the carbon nanotubes to be fabricated vertically. Metal catalyst [30] is deposited selectively on a desired area for forming carbon nanotube. Carbon nanotubes [20] can be formed on conductive fingers [22] or between conductive fingers [22]. The present invention uses the chemical vapor deposition method where deposition is made onto a metal catalyst namely iron, nickel or cobalt. However, other nanotube deposition methods can also be used as long as the nanotubes are formed vertical in nature. The performance of the carbon nanotubes [20] can be enhanced by chemical functionalization which allows the structure to be more sensitive to a particular agent.
The completed interdigital device with integrated carbon nanotube [20] structure can then be operated based on the fringing electric effect [28], as shown in Fig. 4, with a capacitance output. At least two conductive fingers act as electrodes of capacitor. These nanotubes are connected to a maximum of one electrode or finger only. When the device is used as a sensor, the electrical permittivity of the device will result in a capacitance change which can be represented by a simple capacitive equation.
C = £r. ε0. A /d where C is the device capacitance, εΓ is the dielectric permittivity of carbon nanotubes [20], ε0 is the dielectric constant, A the area of the interdigitated fingers [22] and d is the gap between the fingers. The carbon nanotubes permittivity changes according to environment. With in-plane nanotube finger structure described above, most of the change in the fringing field only occurs at the top structure of the interdigital device. There is a high potential of increasing the performance or sensitivity of the overall device by having nanotubes similar to Fig. 5A and Fig. 5B which are formed out of plane with respect to
the interdigital fingers [22]. This can be done by etching a trench partially into the insulating layer [34] as shown in Fig. 5A or trenching into the substrate [36] as shown in Fig. 5B. Trenching of substrate [36] or insulating material [34] can be done by wet or dry etching. Prior to the formation of the vertical carbon nanotubes [20], thin layer of metal catalyst is deposited into the trenches.
With this new configuration, the carbon nanotubes [20] will now play a role in effecting the change in the fringing field [28] at both top and bottom halves of the device as shown in Fig. 6. During operation, there will be a larger or more significant change in the relative permittivity of carbon nanotubes [20] and the overall interdigital capacitance, resulting in an improved device performance.
Accordingly, the invention disclosed a device with vertical carbon nanotubes [20], grown vertically which can integrated into an interdigital device which can then be operated based on fringing electric field effect. It is the combination of the above features and its technical advantages give rise to the uniqueness of such invention. Although the descriptions above contain much specificity, these should not be construed as limiting the scope of the embodiment but as merely providing illustrations of some of the presently preferred embodiments.
Claims
1. A device with carbon nanotubes, comprising:
a substrate [26];
an insulating layer on top of substrate [24];
at least two conductive fingers [22] on top of insulating layer spaced apart, said fingers act as electrodes of capacitor;
characterized in that,
a plurality of carbon nanotubes vertically formed [20] on top of conductive fingers [22] or between conductive fingers [22], said carbon nanotube having a permittivity which changes according to environment, hence affecting capacitance measured.
2. A device according to claim 1 , wherein part of the carbon nanotubes [20] are formed in a trench etched into the insulating layer [34].
3. A device according to claim 1 , wherein the carbon nanotubes [20] are formed in a trench etched into the substrate surface [36].
4. A method of fabricating device with carbon nanotube, comprising:
depositing a layer of insulating layer [24] on substrate [26];
depositing a layer of conductive material, patterning and etching said layer to form interdigital structure [22];
depositing and patterning metal catalyst [30] on a desired area for forming carbon nanotube; and
forming vertical carbon nanotubes [20] structures via nanotubes deposition.
5. A method according to claim 1 , wherein part of the carbon nanotubes [20] are formed in a trench etched into the insulating layer [34].
6. A method according to claim 1 , wherein the carbon nanotubes [20] are formed in a trench etched into the substrate surface [36].
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI2010700022A MY165691A (en) | 2010-05-06 | 2010-05-06 | Device with carbon nanotube |
MYPI2010700022 | 2010-05-06 |
Publications (1)
Publication Number | Publication Date |
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WO2011139137A1 true WO2011139137A1 (en) | 2011-11-10 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/MY2011/000034 WO2011139137A1 (en) | 2010-05-06 | 2011-04-19 | Device with carbon nanotube |
Country Status (2)
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MY (1) | MY165691A (en) |
WO (1) | WO2011139137A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9433082B1 (en) | 2015-03-31 | 2016-08-30 | International Business Machines Corporation | Propagation velocity tuning with functionalized carbon nanomaterial in printed wiring boards (PWBs) and other substrates, and design structures for same |
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US6514113B1 (en) * | 1999-06-15 | 2003-02-04 | Iljin Nanotech Co., Ltd. | White light source using carbon nanotubes and fabrication method thereof |
US7175494B1 (en) * | 2002-08-22 | 2007-02-13 | Cdream Corporation | Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device |
US20070132043A1 (en) * | 2002-01-16 | 2007-06-14 | Keith Bradley | Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices |
WO2008133656A2 (en) * | 2006-11-17 | 2008-11-06 | The Trustees Of Boston College | Nanoscale sensors |
US7462890B1 (en) * | 2004-09-16 | 2008-12-09 | Atomate Corporation | Nanotube transistor integrated circuit layout |
WO2009088882A2 (en) * | 2007-12-31 | 2009-07-16 | Atomate Corporation | Edge-contacted vertical carbon nanotube transistor |
-
2010
- 2010-05-06 MY MYPI2010700022A patent/MY165691A/en unknown
-
2011
- 2011-04-19 WO PCT/MY2011/000034 patent/WO2011139137A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6514113B1 (en) * | 1999-06-15 | 2003-02-04 | Iljin Nanotech Co., Ltd. | White light source using carbon nanotubes and fabrication method thereof |
US20070132043A1 (en) * | 2002-01-16 | 2007-06-14 | Keith Bradley | Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices |
US7175494B1 (en) * | 2002-08-22 | 2007-02-13 | Cdream Corporation | Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device |
US7462890B1 (en) * | 2004-09-16 | 2008-12-09 | Atomate Corporation | Nanotube transistor integrated circuit layout |
WO2008133656A2 (en) * | 2006-11-17 | 2008-11-06 | The Trustees Of Boston College | Nanoscale sensors |
WO2009088882A2 (en) * | 2007-12-31 | 2009-07-16 | Atomate Corporation | Edge-contacted vertical carbon nanotube transistor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9433082B1 (en) | 2015-03-31 | 2016-08-30 | International Business Machines Corporation | Propagation velocity tuning with functionalized carbon nanomaterial in printed wiring boards (PWBs) and other substrates, and design structures for same |
US9756720B2 (en) | 2015-03-31 | 2017-09-05 | International Business Machines Corporation | Propagation velocity tuning with functionalized carbon nanomaterial in printed wiring boards (PWBs) and other substrates, and design structures for same |
US10091870B2 (en) | 2015-03-31 | 2018-10-02 | International Business Machines Corporation | Methods for tuning propagation velocity with functionalized carbon nanomaterial |
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MY165691A (en) | 2018-04-20 |
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