WO2011135939A1 - Method of manufacturing crystalline semiconductor and laser anneal apparatus - Google Patents
Method of manufacturing crystalline semiconductor and laser anneal apparatus Download PDFInfo
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- WO2011135939A1 WO2011135939A1 PCT/JP2011/056202 JP2011056202W WO2011135939A1 WO 2011135939 A1 WO2011135939 A1 WO 2011135939A1 JP 2011056202 W JP2011056202 W JP 2011056202W WO 2011135939 A1 WO2011135939 A1 WO 2011135939A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 34
- 230000003287 optical effect Effects 0.000 claims abstract description 18
- 230000002123 temporal effect Effects 0.000 claims abstract description 9
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 238000005224 laser annealing Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 238000002425 crystallisation Methods 0.000 abstract description 7
- 230000008025 crystallization Effects 0.000 abstract description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000005401 electroluminescence Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
- B23K26/705—Beam measuring device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Definitions
- the present invention relates to a crystalline semiconductor manufacturing method and a laser annealing apparatus suitably used for manufacturing a polycrystalline or single crystal semiconductor film of a thin film transistor used in a pixel switch or a driving circuit of a liquid crystal display or an organic EL display.
- a thin film transistor used for a pixel switch or a drive circuit of a liquid crystal display or an organic EL (Electro-Luminescence) display laser annealing using a laser is performed as a part of a low temperature process manufacturing method.
- a non-single crystal semiconductor film formed on a substrate is irradiated with a laser to be locally heated and melted, and then the semiconductor thin film is crystallized into a polycrystal or a single crystal in the cooling process. Since the crystallized semiconductor thin film has high carrier mobility, the performance of the thin film transistor can be improved.
- the laser output is controlled to be constant so that the irradiated laser has a stable irradiation energy.
- the pulse energy is controlled to be constant.
- an excimer gas laser that is widely used for the pulse laser oscillates a laser beam by a discharge method.
- a high-power excimer gas laser a plurality of discharges are generated due to a residual voltage after the first discharge due to a high voltage, and as a result, a laser beam having a plurality of peaks is generated.
- the second and subsequent peaks may have different characteristics from the first peak.
- a pulse laser oscillation device has been proposed in which a ratio between a plurality of maximum values in a pulse waveform of a pulse laser is obtained, and this ratio is kept within a predetermined range to keep the characteristics of crystallized silicon constant (see Patent Document 1). ).
- the time-varying waveform of the pulse laser beam includes two or more peak groups, and the peak value of the pulse laser beam of the second peak group of the pulse laser beam group of the first peak group is thus, it is set to be within the range of 0.37 to 0.47.
- the characteristics of crystallized silicon are kept constant by setting the peak ratio in a stable range.
- the peak ratio in such a range is stabilized, the crystallization and activation of the silicon thin film are not necessarily uniform in the plane of the silicon thin film.
- the present inventors have found that the value of the peak ratio itself contributes more to the homogenization of crystallization characteristics than the stabilization of the peak ratio, and completed the present invention. It has come to be.
- the pulse laser is changed into a plurality of pulses in one pulse in the temporal intensity change.
- the first peak group having the maximum height and the second peak group appearing thereafter are peak intensity values when the amorphous semiconductor is irradiated.
- the second peak group) / (first peak group) ⁇ 0.35 is satisfied.
- the laser annealing apparatus of the present invention is also directed to a laser oscillator that outputs a pulsed laser, an optical system that guides the pulsed laser to an amorphous semiconductor, and to scan and irradiate the pulsed laser to the amorphous semiconductor.
- the peak intensity ratio when the peak intensity ratio satisfies the above relationship, uniform crystallization characteristics can be obtained when the amorphous semiconductor irradiated with the pulse laser is crystallized. If this ratio exceeds 0.35, the characteristics of the crystallized semiconductor will vary.
- One peak group may have a plurality of peaks, and the peak intensity in the peak group can be indicated by the maximum height in the peak group. In a normal excimer laser, a first peak group having a relatively high height appears first, and then after a minimum value (about a fraction of the maximum height) at which the intensity decreases greatly, A second peak group having a small height appears, and two peak groups are roughly included. In the present invention, three or more peak groups may appear in one pulse. In addition, one pulse may be output by one laser oscillator, or may be one pulse that is overlapped by pulses output by two or more laser oscillators.
- the pulse laser needs to satisfy the above peak intensity ratio when output from a laser oscillator.
- a single pulse has a plurality of peak groups with temporal intensity changes, it is usually impossible to adjust the height of each peak group separately. For this reason, at the time of output from the laser oscillator, at least the peak intensity ratio is satisfied.
- the pulse laser may change its laser waveform through an optical system or the like, and the maximum height of the pulse laser may be lowered. In this case, since the intensity of the first peak group decreases, the peak intensity ratio tends to increase. Therefore, when the peak intensity ratio changes in the optical path, the pulse laser output from the laser oscillator is set so that the peak intensity ratio of the pulse laser when the amorphous semiconductor is irradiated satisfies the above condition.
- the ratio is set to 0.35 or less and a value that allows for the change (a smaller value).
- the output of the pulse laser is desirably 700 mJ or more in terms of pulse energy, and more desirably 850 mJ.
- the peak intensity ratio tends to be small.
- the adjustment range of the attenuator that is arranged in the optical path and adjusts the transmittance of the laser is small.
- an amorphous silicon thin film formed on a substrate is a suitable target as an amorphous semiconductor.
- a glass substrate is usually used as the substrate, but the material of the substrate is not particularly limited in the present invention, and other materials may be used.
- the amorphous silicon thin film is usually formed to a thickness of 40 to 100 nm, but the thickness is not particularly limited in the present invention.
- an excimer laser with a wavelength of 308 nm is preferably used as the pulse laser.
- the type of the pulse laser is not limited to this.
- the pulse laser when an amorphous semiconductor is irradiated with a pulse laser to crystallize the amorphous semiconductor, the pulse laser has a plurality of peak groups in one pulse in a temporal intensity change.
- the peak groups the first peak group having the maximum height and the second peak group appearing thereafter are peak intensity values when the amorphous semiconductor is irradiated. Since the relationship of (peak group) / (first peak group) ⁇ 0.35 is satisfied, there is an effect of obtaining a uniform crystalline semiconductor.
- the substrate 8 used in the flat panel display TFT device is targeted, and an amorphous silicon thin film 8a is formed on the substrate 8 as an amorphous film.
- the amorphous silicon thin film 8a is formed on the upper layer of the substrate 8 by a conventional method and subjected to dehydrogenation treatment.
- the type of the target substrate and the amorphous film formed thereon is not limited thereto.
- FIG. 1 shows an excimer laser annealing apparatus 1 used in a method for producing a crystalline film according to an embodiment of the present invention.
- the excimer laser annealing apparatus 1 corresponds to the laser annealing apparatus of the present invention.
- an excimer laser oscillator 2 that outputs a pulse laser having a wavelength of 308 nm, a pulse frequency of 1 to 600 Hz, and a pulse width (FWHM: full width at half maximum) of 20 to 50 ns is provided in the vibration isolation table 6.
- the excimer laser oscillator 2 is provided with a control circuit 2a that generates a pulse signal.
- the pulse laser output from the excimer laser oscillator 2 has two peak groups A and B in a temporal change as shown in FIG. 2, and the first peak having the maximum height.
- the peak intensity a of the group A the peak intensity b of the second peak group B satisfies the condition that b / a is 0.35 or less. Since only the second and subsequent peaks cannot be formed separately from the first peak, and the second and subsequent peaks cannot be controlled, a pulse laser with the intensity of the second and subsequent peaks lowered is output. is required.
- the setting of the pulse laser waveform can be performed by designing the laser oscillation circuit, setting the energy of the laser oscillator, or the gas mixing ratio of the excimer gas laser.
- the excimer laser oscillator 2 corresponds to the laser oscillator of the present invention.
- An attenuator 3 is disposed on the output side of the excimer laser oscillator 2, and an optical fiber 5 is connected to the output side of the attenuator 3 via a coupler 4.
- An optical system 7 including condensing lenses 70a and 70b and beam homogenizers 71a and 71b disposed between the condensing lenses 70a and 70b is connected to the transmission destination of the optical fiber 5.
- the optical system 7 may include an appropriate optical member such as a mirror.
- the content of the optical system is not particularly limited, and can be constituted by an appropriate optical member.
- the optical system 7 can be shaped into an appropriate beam shape in addition to guiding the pulse laser.
- a substrate mounting table 9 on which the substrate 8 is mounted is installed.
- the optical system 7 is set so as to shape the pulse laser into a rectangular shape or a line beam shape with an irradiation surface shape.
- the substrate mounting table 9 is movable along the surface direction (XY direction) of the substrate mounting table 9 and includes a moving device 10 that moves the substrate mounting table 9 at high speed along the surface direction. ing.
- the substrate 8 on which the amorphous silicon thin film 8a is formed as an upper layer is placed on the substrate platform 9.
- a pulse signal is generated so that a pulse laser having a preset pulse frequency (1 to 600 Hz), a pulse width (FWHM) of 20 to 50 ns and the pulse energy is output, and the excimer laser is generated by the pulse signal.
- a pulse laser with a wavelength of 308 nm is output from the oscillator 2.
- the pulse laser output from the excimer laser oscillator 2 reaches the attenuator 3 and is attenuated at a predetermined attenuation rate by passing through the attenuator 3.
- the attenuation rate is set so that the pulse laser has a predetermined energy density on the processing surface.
- the attenuator 3 may vary the attenuation rate.
- the pulse laser whose energy density is adjusted is transmitted by the optical fiber 5 and introduced into the optical system 7.
- the short axis width is shaped into a rectangular or line beam having a short axis width of 1.0 mm or less by the condenser lenses 70a and 70b, the beam homogenizers 71a and 71b, and the like on the processing surface toward the substrate 8.
- the pulse laser has two peak groups in the temporal change in the same manner as the output, and on the processed surface, (peak intensity of the second peak group) / (peak intensity of the first peak group).
- the calculated peak intensity ratio is 0.35 or less.
- the substrate mounting table 9 is moved in the minor axis width direction of the line beam by the moving device 10 along the surface of the amorphous silicon thin film 8a.
- the pulse laser is relatively moved over a wide area of the surface of the amorphous silicon thin film 8a. Irradiated while being scanned.
- the pulse laser beam is relatively scanned by moving the substrate mounting table.
- the pulse laser beam is relatively moved by moving the optical system to which the pulse laser beam is guided at high speed. It is good also as what scans.
- FIG. 2 shows a pulse waveform when the output is changed using the same laser oscillator (1050 mJ, 950 mJ, 850 mJ) and a pulse laser is output.
- the waveform is a waveform measured at a position corresponding to the amorphous silicon thin film 8a on the substrate 8, and the intensity is shown as a relative value.
- the pulse waveform has a first peak group A and a second peak group B appearing thereafter.
- the output of the pulse laser is increased (1050 mJ)
- the maximum height of the first peak group is increased along with this, and the height of the second peak group is also increased.
- the intensity is a and the second peak intensity is b
- b / a is 0.418.
- the ratio is 0.374, although the ratio is small.
- the intensity of the second peak group is relatively high and the silicon thin film is melted twice. That is, silicon crystallizes when the silicon thin film melts from the liquid by the first peak to become a solid from a liquid, but when the intensity of the second peak is high, the solidified silicon thin film is melted again and recrystallization occurs. . This phenomenon occurs with variation in the silicon thin film, and the uniformity of crystallization is impaired.
- FIG. 2 shows that when the output of the pulse laser is further reduced (850 mJ), the above ratio is reduced to 0.35 or less. The silicon thin film is crystallized uniformly.
- the silicon thin film is crystallized by irradiating a pulse laser having the peak intensity ratio of 0.374 (comparative example) and 0.341 (invention example) to the energy density (E / D) shown in FIG. It was.
- An SEM photograph (magnification 5000 times; drawing substitute photograph) of the obtained polycrystalline silicon thin film is shown in FIG. Although the crystallinity changes depending on the energy density irradiated to the substrate, the polycrystalline silicon thin film (invention example) irradiated with a laser pulse with a small second peak intensity has a higher second peak intensity. It can be seen that a more uniform crystal is obtained than the polycrystalline silicon thin film irradiated with the pulse (comparative example).
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Abstract
Description
上記レーザの照射においては、半導体薄膜で均質な処理が行われる必要があり、照射されるレーザが安定した照射エネルギーを有するように、一般にレーザ出力を一定にする制御がなされており、パルスレーザでは、パルスエネルギーを一定にする制御がなされている。 In a thin film transistor used for a pixel switch or a drive circuit of a liquid crystal display or an organic EL (Electro-Luminescence) display, laser annealing using a laser is performed as a part of a low temperature process manufacturing method. In this method, a non-single crystal semiconductor film formed on a substrate is irradiated with a laser to be locally heated and melted, and then the semiconductor thin film is crystallized into a polycrystal or a single crystal in the cooling process. Since the crystallized semiconductor thin film has high carrier mobility, the performance of the thin film transistor can be improved.
In the above laser irradiation, it is necessary to perform a uniform process on the semiconductor thin film. In general, the laser output is controlled to be constant so that the irradiated laser has a stable irradiation energy. The pulse energy is controlled to be constant.
このパルスレーザ発振装置では、前記パルスレーザビームの時間変化波形が2以上のピーク群を含み、そのうちの2番目のピーク群のパルスレーザビームのピーク値が最初のピーク群のパルスレーザビーム群に対して、0.37から0.47の範囲内となるように設定している。 By the way, an excimer gas laser that is widely used for the pulse laser oscillates a laser beam by a discharge method. In a high-power excimer gas laser, a plurality of discharges are generated due to a residual voltage after the first discharge due to a high voltage, and as a result, a laser beam having a plurality of peaks is generated. At that time, the second and subsequent peaks may have different characteristics from the first peak. For this reason, a pulse laser oscillation device has been proposed in which a ratio between a plurality of maximum values in a pulse waveform of a pulse laser is obtained, and this ratio is kept within a predetermined range to keep the characteristics of crystallized silicon constant (see Patent Document 1). ).
In this pulse laser oscillating device, the time-varying waveform of the pulse laser beam includes two or more peak groups, and the peak value of the pulse laser beam of the second peak group of the pulse laser beam group of the first peak group is Thus, it is set to be within the range of 0.37 to 0.47.
本発明者らは、さらに上記ピーク比について検証を進めた結果、ピーク比の安定化よりもピーク比の値そのものが結晶化特性の均一化に大きく寄与していることを見出し、本発明を完成するに至ったものである。 As described above, in the apparatus disclosed in
As a result of further verification of the peak ratio, the present inventors have found that the value of the peak ratio itself contributes more to the homogenization of crystallization characteristics than the stabilization of the peak ratio, and completed the present invention. It has come to be.
1つのピーク群では、複数のピークを有するものであってもよく、ピーク群の中の最大高さで当該ピーク群でのピーク強度を示すことができる。通常のエキシマレーザでは、最初に相対的に高さの大きな第1のピーク群が現れ、その後に、強度が大きく低下する極小値(最大高さの数分の1程度)を経た後、相対的に高さの小さい第2のピーク群が現れ、大きくは2つのピーク群を有している。なお、本発明としては、1パルスにピーク群が3以上現れるものであってもよい。
また、1パルスは、1つのレーザ発振器で出力されたものであってもよく、二つ以上のレーザ発振器で出力されたパルスが重ね合わされて1パルスとなるものであってもよい。 In the present invention, when the peak intensity ratio satisfies the above relationship, uniform crystallization characteristics can be obtained when the amorphous semiconductor irradiated with the pulse laser is crystallized. If this ratio exceeds 0.35, the characteristics of the crystallized semiconductor will vary.
One peak group may have a plurality of peaks, and the peak intensity in the peak group can be indicated by the maximum height in the peak group. In a normal excimer laser, a first peak group having a relatively high height appears first, and then after a minimum value (about a fraction of the maximum height) at which the intensity decreases greatly, A second peak group having a small height appears, and two peak groups are roughly included. In the present invention, three or more peak groups may appear in one pulse.
In addition, one pulse may be output by one laser oscillator, or may be one pulse that is overlapped by pulses output by two or more laser oscillators.
この実施形態の結晶質膜の製造方法では、フラットパネルディスプレイTFTデバイスに用いられる基板8を対象にし、該基板8上には非晶質膜としてアモルファスシリコン薄膜8aが形成されているものとする。アモルファスシリコン薄膜8aは、常法により基板8の上層に形成され、脱水素処理がなされている。
ただし、本発明としては、対象となる基板およびこれに形成された非晶質膜の種別がこれに限定されるものではない。 An embodiment of the present invention will be described below with reference to FIG.
In the crystalline film manufacturing method of this embodiment, the
However, in the present invention, the type of the target substrate and the amorphous film formed thereon is not limited thereto.
エキシマレーザアニール処理装置1では、308nmの波長を有しパルス周波数1~600Hz、パルス幅(FWHM:full width at half maximum)20~50nsのパルスレーザを出力するエキシマレーザ発振器2が除振台6に設置されており、該エキシマレーザ発振器2には、パルス信号を生成する制御回路2aが備えられている。 FIG. 1 shows an excimer laser annealing
In the excimer laser
上記エキシマレーザ発振器2は、本発明のレーザ発振器に相当する。 Further, the pulse laser output from the
The
先ず、基板載置台9上に、アモルファスシリコン薄膜8aが上層に形成された基板8を載置する。
制御回路2aでは、予め設定されたパルス周波数(1~600Hz)、パルス幅(FWHM)20~50ns、前記パルスエネルギーのパルスレーザが出力されるようにパルス信号が生成され、該パルス信号によってエキシマレーザ発振器2より308nmの波長のパルスレーザが出力される。 Next, a method for crystallizing an amorphous silicon thin film using the excimer
First, the
In the
エネルギー密度が調整されたパルスレーザは、光ファイバ5によって伝送されて光学系7に導入される。光学系7では、上記のように集光レンズ70a、70b、ビームホモジナイザ71a、71bなどによって短軸幅が1.0mm以下の長方形またはラインビーム状に整形され、基板8に向けて加工面において所定のエネルギー密度で照射される。また、パルスレーザは、出力時と同様に時間的変化において2つのピーク群を有しており、加工面において(第2のピーク群のピーク強度)/(第1のピーク群のピーク強度)で算出されるピーク強度比が0.35以下になっている。 The pulse laser output from the
The pulse laser whose energy density is adjusted is transmitted by the
上記照射により得られた結晶質薄膜は、平均結晶粒径が350nm程度で均一で良質な結晶性を有している。上記結晶質薄膜は、有機ELディスプレイに好適に使用することができる。ただし、本発明としては、使用用途がこれに限定されるものではなく、その他の液晶ディスプレイや電子材料として利用することが可能である。
なお、上記実施形態では、基板載置台を移動させることでパルスレーザ光を相対的に走査するものとしたが、パルスレーザ光が導かれる光学系を高速に移動させることでパルスレーザ光を相対的に走査するものとしてもよい。 By irradiation with the pulse laser beam, only the amorphous silicon
The crystalline thin film obtained by the irradiation has a uniform crystal quality with an average crystal grain size of about 350 nm. The crystalline thin film can be suitably used for an organic EL display. However, the use of the present invention is not limited to this, and the present invention can be used as other liquid crystal displays and electronic materials.
In the above embodiment, the pulse laser beam is relatively scanned by moving the substrate mounting table. However, the pulse laser beam is relatively moved by moving the optical system to which the pulse laser beam is guided at high speed. It is good also as what scans.
同一のレーザ発振器を用いて出力を変えて(1050mJ、950mJ、850mJ)、パルスレーザを出力した際のパルス波形を図2に示す。該波形は、基板8上のアモルファスシリコン薄膜8aに相当する位置で計測した波形であり、その強度を相対値で示している。
パルス波形は、第1のピーク群Aと、その後に現れる第2のピーク群Bとを有している。パルスレーザの出力を大きくした場合(1050mJ)、これに伴って第1のピーク群の最大高さが大きくなるとともに、第2のピーク群の高さも大きくなっており、第1のピーク群のピーク強度をa、第2のピーク強度をbとして、b/aは0.418となっている。また、これよりもパルスレーザの出力を小さくした場合(950mJ)、上記比は小さくなるものの、0.374を有している。 Examples of the present invention will be described below.
FIG. 2 shows a pulse waveform when the output is changed using the same laser oscillator (1050 mJ, 950 mJ, 850 mJ) and a pulse laser is output. The waveform is a waveform measured at a position corresponding to the amorphous silicon
The pulse waveform has a first peak group A and a second peak group B appearing thereafter. When the output of the pulse laser is increased (1050 mJ), the maximum height of the first peak group is increased along with this, and the height of the second peak group is also increased. Assuming that the intensity is a and the second peak intensity is b, b / a is 0.418. Further, when the output of the pulse laser is made smaller than this (950 mJ), the ratio is 0.374, although the ratio is small.
図2で、さらにパルスレーザの出力を下げると(850mJ)、上記比は小さくなって0.35以下になることが示されている。シリコン薄膜は均一に結晶化される。 Thus, when the silicon thin film is irradiated with a pulse laser having a peak intensity ratio exceeding 0.35, the intensity of the second peak group is relatively high and the silicon thin film is melted twice. That is, silicon crystallizes when the silicon thin film melts from the liquid by the first peak to become a solid from a liquid, but when the intensity of the second peak is high, the solidified silicon thin film is melted again and recrystallization occurs. . This phenomenon occurs with variation in the silicon thin film, and the uniformity of crystallization is impaired.
FIG. 2 shows that when the output of the pulse laser is further reduced (850 mJ), the above ratio is reduced to 0.35 or less. The silicon thin film is crystallized uniformly.
基板に照射したエネルギー密度の大きさにより結晶性が変わるが、2番目のピークの強度が小さいレーザパルスで照射した多結晶シリコン薄膜(発明例)の方が、2番目のピークの強度が大きいレーザパルスで照射した多結晶シリコン薄膜(比較例)よりも均一な結晶が得られていることが分かる。 Next, the silicon thin film is crystallized by irradiating a pulse laser having the peak intensity ratio of 0.374 (comparative example) and 0.341 (invention example) to the energy density (E / D) shown in FIG. It was. An SEM photograph (magnification 5000 times; drawing substitute photograph) of the obtained polycrystalline silicon thin film is shown in FIG.
Although the crystallinity changes depending on the energy density irradiated to the substrate, the polycrystalline silicon thin film (invention example) irradiated with a laser pulse with a small second peak intensity has a higher second peak intensity. It can be seen that a more uniform crystal is obtained than the polycrystalline silicon thin film irradiated with the pulse (comparative example).
2 エキシマレーザ発振器
3 減衰器
7 光学系
70a 集光レンズ
70b 集光レンズ
71a ビームホモジナイザ
71b ビームホモジナイザ
8 基板
8a アモルファスシリコン薄膜
9 基板載置台
10 移動装置 DESCRIPTION OF
Claims (4)
- 非晶質半導体にパルスレーザを照射して前記非晶質半導体を結晶化させる際に、前記パルスレーザが時間的強度変化において1パルスに複数のピーク群を有し、前記非晶質半導体への照射時に、該ピーク群のうち、最大高さを有する第1のピーク群と、その後に現れる第2のピーク群とが、ピーク強度値で(第2のピーク群)/(第1のピーク群)≦0.35の関係を満たすことを特徴とする結晶質半導体の製造方法。 When the amorphous semiconductor is crystallized by irradiating the amorphous semiconductor with the pulse laser, the pulse laser has a plurality of peak groups in one pulse in the temporal intensity change, During irradiation, the first peak group having the maximum height among the peak groups and the second peak group appearing thereafter are expressed as (second peak group) / (first peak group). ) ≦ 0.35 is satisfied, A method for producing a crystalline semiconductor,
- 前記非晶質半導体が、基板上に形成されたアモルファスシリコン薄膜であることを特徴とする請求項1に記載の結晶質半導体の製造方法。 The method for producing a crystalline semiconductor according to claim 1, wherein the amorphous semiconductor is an amorphous silicon thin film formed on a substrate.
- パルスレーザを出力するレーザ発振器と、前記パルスレーザを非晶質半導体に導く光学系と、前記パルスレーザを前記非晶質半導体に対し走査して照射するべく前記非晶質半導体を相対的に移動させる移動装置とを備え、
前記レーザ発振器は、出力されるパルスレーザが時間的強度変化において1パルスに複数のピーク群を有し、該ピーク群のうち、最大高さを有する第1のピーク群と、その後に現れる第2のピーク群とが、ピーク強度値で(第2のピーク群)/(第1のピーク群)≦0.35の関係を満たすものであることを特徴とするレーザアニール装置。 A laser oscillator that outputs a pulsed laser, an optical system that guides the pulsed laser to an amorphous semiconductor, and the amorphous semiconductor relatively moved to scan and irradiate the pulsed laser to the amorphous semiconductor A moving device
In the laser oscillator, the output pulse laser has a plurality of peak groups in one pulse in the temporal intensity change, and among the peak groups, the first peak group having the maximum height and the second peak appearing thereafter And a peak intensity value satisfying the relationship of (second peak group) / (first peak group) ≦ 0.35. - 前記非晶質半導体への照射時に、前記パルスレーザが前記関係{(第2のピーク群)/(第1のピーク群)≦0.35}を満たすことを特徴とする請求項3に記載のレーザアニール装置。 The said pulse laser satisfy | fills the said relationship {(2nd peak group) / (1st peak group) <= 0.35} at the time of irradiation to the said amorphous semiconductor, The Claim 3 characterized by the above-mentioned. Laser annealing equipment.
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