WO2011116991A1 - Dispositif et procédé de traitement de substrats - Google Patents

Dispositif et procédé de traitement de substrats Download PDF

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Publication number
WO2011116991A1
WO2011116991A1 PCT/EP2011/001553 EP2011001553W WO2011116991A1 WO 2011116991 A1 WO2011116991 A1 WO 2011116991A1 EP 2011001553 W EP2011001553 W EP 2011001553W WO 2011116991 A1 WO2011116991 A1 WO 2011116991A1
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WO
WIPO (PCT)
Prior art keywords
substrate
microwave
electrode
microwave electrode
gas
Prior art date
Application number
PCT/EP2011/001553
Other languages
German (de)
English (en)
Inventor
Jürgen NIESS
Wilhelm Beckmann
Original Assignee
Hq-Dielectrics Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hq-Dielectrics Gmbh filed Critical Hq-Dielectrics Gmbh
Publication of WO2011116991A1 publication Critical patent/WO2011116991A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Definitions

  • the present invention relates to a device and a method for treating substrates, in particular involving a microwave plasma.
  • epitaxial layers of different materials In semiconductor technology as well as micro- and nanosensors, it is known to deposit epitaxial layers of different materials on substrates. This should preferably be done at low temperature in order not to affect the properties of the base substrate on which the epitaxial layer is to be deposited.
  • the substrates are usually subject to certain temperature limitations with regard to the temperature load to which a substrate may be exposed without significant changes in the properties of the substrate.
  • a device for treating substrates according to claim 1 or 2 and a method for treating substrates according to claim 13 are provided.
  • a method for cleaning a process chamber according to claim 16 is provided.
  • the device for treating substrates has a housing which surrounds a process chamber and at least one substrate receptacle in the housing. Furthermore, a tubular microwave electrode is provided for generating a plasma, wherein the tube axis is directed onto the substrate holder, and a moving unit which carries the microwave electrode or the substrate holder and is suitable for moving the microwave electrode or the substrate holder so that the tube axis is the substrate holder sweeps.
  • the apparatus includes a first gas guide having a first outlet opening into the tubular microwave electrode and facing the substrate receiver and a second gas guide at least partially surrounding the first gas guide and having a second outlet coaxial with the first Outlet is aligned, wherein the first and second gas guide are connected to the moving unit to be moved together with the microwave electrode, and wherein the first and second gas guide can be acted upon by different gas sources.
  • Such a device is able to generate within the microwave electrode a plasma through which two different gas streams can be passed in coaxial alignment with each other, for example a process gas jet of radicals and precursors, in particular a process gas jet of hydrogen or deuterium radicals and precursor gases , such as SiH 4 , GeH 4 , PH 3 , B 2 H 6 , AsH 3 , dichlorosilane, trichlorosilane, NH 3 and the like.
  • This precursor gas radical beam is capable of epitaxial film formation on a substrate, even at low temperatures of, for example, 400 ° C, as compared to high temperature deposition processes.
  • the housing has a passage opening in a housing wall and the microwave electrode is arranged outside the housing such that the tube axis is directed through the passage opening onto the substrate receptacle.
  • a seal to the environment is provided by a bellows unit, in particular in the form of a bellows, which extends between the housing wall and the microwave electrode or the movement unit carrying the tubular microwave electrode.
  • At least one further microwave electrode is provided, wherein the microwave electrode between a use position above the substrate holder and a rest position spaced from the substrate receiving is movable.
  • the further microwave electrode in its position above the substrate receptacle, is suitable for generating a microwave plasma in the vicinity of the disk, in particular a high-density hydrogen plasma (with high ion density), which is suitable for removing oxide residues from the substrate surface.
  • a high-density hydrogen plasma with high ion density
  • This is also at lower temperatures of, for example, 400 ° C, which is generally is considered to be an acceptable temperature range.
  • Preferably means are provided to isolate the further microwave electrode from a process gas atmosphere in the process chamber when in the rest position. Otherwise, the process gases used during epitaxial layer formation could otherwise cause deposition on the further microwave electrode, which may impair their usefulness.
  • At least one further microwave electrode is provided, as well as a substrate receptacle, wherein the microwave electrodes and / or substrate receptacle is movable relative to the other element such that a substrate located on the substrate receptacle moves from the region of the further microwave electrode into the region of the tubular microwaves - Can reach gene microwave electrode.
  • the further microwave electrode can again be used to generate a microwave plasma in the region of the substrate surface in order to remove oxide from the surface. Subsequently, the substrate thus freed from the oxide can be brought into the region of the tubular microwave electrode to perform an epitaxial layer formation process, namely via a relative movement between the substrate receptacle and the microwave electrodes.
  • the substrate holder is designed such that it can perform a relative movement to the microwave electrodes in order to be able to provide the above-described relative movement.
  • the microwave electrodes may be stationary in this case, or they may optionally provide a lifting movement relative to the substrate support.
  • a plurality of further microwave electrodes are provided, which are arranged at different distances to the substrate holder, in particular in the direction of movement of the substrate holder, at decreasing distances therefrom.
  • the further microwave electrode is a rod-shaped microwave electrode having an inner conductor and an outer conductor arranged coaxially thereto, which have a Mikrowelleneinspeisungsen- de and a free end.
  • the outer conductor has a tube region which completely surrounds the inner conductor along a partial region adjacent to the microwave feed end along its longitudinal axis, and an opening region which provides an opening which becomes larger in the direction of the free end of the outer conductor.
  • the opening in the opening region of the outer conductor preferably becomes steadily and / or stepwise larger.
  • a plasma ignition device in particular a linear Hertzian oscillator for the further microwave electrode is provided.
  • a device is provided for varying a distance between the substrate receptacle and the tubular microwave electrode and / or the further microwave electrode. This may include, for example, a lifting device for the substrate holder.
  • At least one lifting, linear, pivoting and / or rotational movement mechanism for the substrate receiving is provided, which causes a corresponding movement with respect to the tubular microwave electrode or the further microwave electrode in order to achieve a respective process homogenization.
  • at least one corresponding mechanism may be provided for the tubular and / or the at least one further microwave electrode.
  • the moving unit provides a gimbal mounting of the tubular microwave electrode, whereby a uniform sweep of a substrate surface is made possible. This can be promoted in particular by a rotation of the substrate holder.
  • the substrate receptacle can also be stored in a cardan-like manner, whereby likewise a uniform sweep of a substrate surface through the tubular microwave electrode at an adjustable angle is made possible.
  • the at least one microwave electrode has a rod-shaped inner conductor which is at least partially radially surrounded by an outer conductor having an opening for coupling out microwaves, which extends over at least the entire width or the diameter of a substrate to be treated.
  • a jet of hydrogen and / or deuterium-containing gas is passed through a first microwave plasma spaced from the substrate to be treated to form a beam of hydrogen and / or deuterium radicals the substrate to be treated is directed. Furthermore, a beam of precursor gases is passed through the microwave plasma such that the beam of precursor gases is surrounded by the beam of hydrogen and / or deuterium radicals and they form a common process beam directed at the substrate to be treated.
  • This process beam is swept over the substrate to be treated to deposit an epitaxial layer on the substrate, wherein the sweeping is effected by a corresponding relative movement between a first microwave electrode which generates the first plasma and a substrate support on which the substrate is located ,
  • the microwave electrode generating the first plasma is moved together with gas inlet nozzles for hydrogen and / or deuterium-containing gas and precursor gases.
  • the described method enables an epitaxial layer construction by combining a beam of hydrogen and / or deuterium radicals with a beam of precursor gases even at low temperatures in the range of 400 ° C.
  • the substrate can be suitably heated to the required temperature. Such heating of the substrate can be effected, for example, by resistance heating of the substrate receptacle and / or by direct heating of the substrate and / or substrate reception by means of electromagnetic radiation, such as a heating lamp.
  • the beam of hydrogen and / or deuterium radicals is moved over the substrate to be treated to purify and / or passivate it.
  • a second microwave plasma in particular a hydrogen and / or deuterium plasma, adjacent to the substrate to be treated to thereby remove oxide from the substrate surface.
  • a jet of fluorine-containing gas in particular NF 3 gas, is passed through a microwave plasma to form a jet of fluorine radicals, the jet of fluorine radicals being directed into the process chamber to be cleaned, and that jet Fluorine radicals are moved over areas of the process chamber to be cleaned.
  • a jet of water and / or deuterium-containing gas can be passed through the microwave plasma to form a beam of hydrogen and / or deuterium radicals, the beam of hydrogen and / or hydrogen.
  • Fig. 1 is a schematic sectional view through an apparatus for treating substrates
  • Fig. 2 is a schematic sectional view through the device of FIG.
  • FIG. 3 shows a schematic sectional view through an alternative device for treating substrates
  • 4a-4c is a schematic sectional view of an apparatus similar to the
  • FIGS. 1 and 2 during different processes.
  • the relative terms used in the following description, e.g. left, right, above and below refer to the drawings and are not intended to limit the application in any way, even though they may show preferred arrangements.
  • the devices 1 and 2 respectively show schematic sectional views through a device 1 for treating a substrate 2, wherein different components are shown in different positions.
  • the device 1 has a vacuum housing 3, which is only indicated in outline, a first microwave plasma arrangement 5 and a second microwave plasma arrangement 7.
  • the vacuum housing 3 defines a process chamber 8 in the interior, in which a substrate holder 10 is arranged.
  • the substrate holder 10 consists of a plate-shaped support 12 and a support element 14 extending perpendicular thereto.
  • the support 12 is constructed in a known manner in order to receive a substrate 2 in a suitable manner thereon.
  • the support member 14 carries the support and is in a known manner in sealed manner out of the vacuum housing.
  • the support member 14 is connected to an external, not shown, lifting and or rotating mechanism in combination, as indicated by the arrows A and B in Figures 1 and 2.
  • a plurality of heating lamps 16 are provided for heating the substrate holder 10 or a substrate 2 located thereon.
  • the substrate receptacle in particular the support 12, consists of a material transparent to the radiation of the heating lamps, the substrate 2 can be heated directly, if desired.
  • the substrate receptacle is not transparent to the heating radiation of the heating lamps 16, a substrate 2 is heated to a predetermined temperature via a corresponding heating of the support 12.
  • a plate could be provided which has a plurality of optionally separately controllable heating zones.
  • such a plate could suitably consist of AlN (aluminum nitride) or other suitable material that does not adversely affect the plasma processes in the process chamber.
  • This plate could itself form the support, or be arranged closely adjacent thereto.
  • the plate itself could be both vertically moved and rotated by a suitable mechanism to provide homogeneous heating of a substrate.
  • Such a plate may have the advantage over heating by means of heating lamps, that the plate primarily provides heat conduction, while the heating lamps provide radiation heating, which may be affected by a occurring during the process coating of the heating lamps / or the substrate.
  • the vacuum housing 3 is suitably connected to a vacuum source in order to vent the process chamber 8 can.
  • a non-illustrated lock for loading and unloading from the substrate 2 is provided in the vacuum housing 3.
  • an opening 20 is further provided, which via a door element 21 is closable.
  • the door member 21 is slidably mounted within the process chamber 8, as shown by the double arrow C.
  • the door element 21 is shown in an open position in FIGS. 1 and 2, but may also be moved in a closed position to close the opening 20.
  • a second opening 23 is provided, which is closable via a corresponding door element 24.
  • the door element 24 is in the representation according to FIG. 1 in a closed position and in the illustration according to FIG. 2 in an open position.
  • the first microwave plasma arrangement 5 consists of a tubular microwave electrode 30, a microwave generator 31 for feeding microwaves into the microwave electrode 30, a support and movement unit 34 and a gas introduction unit 36.
  • the tubular microwave electrode 30 has a tubular body of electrically conductive in a known manner Material which has a microwave feed opening, not shown, via which microwaves from the microwave generator 31 can be fed.
  • the tube axis of the microwave electrode, which is shown at D, is inclined with respect to the surface of the substrate support 12, as can be clearly seen in Figures 1 and 2. However, the tube axis is directed to the support 12, and in particular a substrate located thereon.
  • the support and movement unit 34 has a housing 38 for supporting the microwave electrode 30, the microwave generator 31, and a part of the gas introduction unit 36, as will be explained in more detail below.
  • the housing 38 is connected to a movement mechanism not shown, which is suitable to move the housing in a suitable manner, and in particular to provide a rotation about the axis of rotation E.
  • the axis of rotation E is perpendicular to the substrate support 12 and is angled relative to the tube axis D.
  • the movement of the movement mechanism is a sweeping of the tube axis D over cause the substrate support 12, as the skilled artisan can recognize.
  • the microwave plasma arrangement 5 could also be stationary and the support 12 could be moved by a corresponding mechanism which extends beyond the above-mentioned lifting and / or rotating mechanism so that it is moved relative to the microwave plasma arrangement 5 such that the tube axis D the edition passes over.
  • This can be effected, for example, by a gimbal fastening and movement of the support 12 or else a mechanism which, in addition to a rotational movement, effects a lateral movement of the support 12.
  • the gas introduction unit 36 consists of an outer tube 40 and an inner tube 42, which are arranged coaxially with each other.
  • the outer tube and the inner tube are also aligned coaxially with the microwave electrode 30, so that the tube axis D also coincides with the respective longitudinal axes of the outer tube 40 and the inner tube 42.
  • the inner tube and the outer tube can be acted upon in a suitable manner with different process gases, as will be explained in more detail below.
  • a flexible sealing unit 44 for example in the form of a bellows, is provided in order to generate a negative pressure within the process chamber 8 even when the door element 21 is open.
  • the second microwave plasma arrangement 2 consists essentially of a rod-shaped microwave electrode 50.
  • the microwave electrode 50 is in particular of the type described in DE 102009036766 A, the contents of which are incorporated herein by reference.
  • the microwave electrode 50 has an inner conductor, not shown, and an outer conductor arranged coaxially therewith, which have a microwave feed end and a free end.
  • the outer conductor has a tube region that connects the inner conductor via one adjacent to the microwave feed end lying partial area along its longitudinal axis completely encloses, and an opening portion, which provides in the direction of the free end of the outer conductor, a larger opening.
  • a continuously or stepwise increasing opening is provided, wherein a substantially steadily increasing wave impedance (wave impedance) is formed.
  • a plasma ignition device for example in the form of a linear Hertzian oscillator, is provided in particular at the free end of the inner conductor.
  • the microwave electrode 50 is surrounded by a flexible sealing unit, such as a bellows 52.
  • the microwave electrode 50 is movable via a non-illustrated movement mechanism between a rest position outside of the vacuum housing 3 and a working position within the vacuum housing 3.
  • the bellows 52 has the function of providing a seal in the process chamber 8 with respect to the environment when the microwave electrode 50 is moved into the process chamber 8, as shown in Fig. 2.
  • the microwave electrode 50 is pushed into the process chamber 8 via the opening 23 when the door element 24 is open.
  • the microwave electrode 50 is arranged in its working position adjacent to the substrate holder 10 or a substrate 2 accommodated thereon, in order to be able to produce a high-density microwave plasma in the region of the surface of the substrate 2.
  • FIG. 3 shows an alternative embodiment of a device 1 for treating substrates, the same reference symbols being used as in FIG. 1, provided identical or identical elements are provided.
  • the device 1 in turn has a vacuum housing 3 arranged only in outline, as well as first and second microwave plasma arrangements 5 and 7.
  • the vacuum housing 3 in turn defines a process chamber 8, in which a substrate holder 10 is at least partially arranged.
  • the substrate holder 10 essentially consists of an endless conveyor belt 60, which is guided circumferentially over a plurality of deflection or transport rollers 62.
  • the normal direction of rotation for a treatment of the substrate 2 is in the Clockwise, but it is also possible to move the conveyor belt in a counterclockwise direction.
  • a surrounding transport strand of the conveyor belt 60 is arranged such that it extends in a straight line through the process chamber 8.
  • a substrate 2 is moved from left to right through the process chamber 8.
  • the return of the conveyor belt 60 takes place outside the process chamber 8 in order to be able to carry out, for example, cooling or cleaning processes on the conveyor belt there.
  • the conveyor belt 60 consists of a material substantially transparent to electromagnetic radiation.
  • the conveyor belt 60 should be arranged as completely as possible within the vacuum region, but may also be at least partially outside the vacuum region even with a suitable arrangement.
  • the substrate holder 10 may also provide another transport mechanism, such as transport rollers or a magnetic and / or Heilkissen- leadership.
  • a transport mechanism which can perform a rotational and / or a lifting movement in addition to a linear or oscillating movement through the process chamber 8.
  • the vacuum housing 3 in turn has an opening 20 which can be closed by a door element 21.
  • the first microwave plasma arrangement 5 Adjacent to the opening 20, in turn, the first microwave plasma arrangement 5 is provided, which can be constructed in substantially the same way as the first microwave plasma arrangement 5 according to FIGS. 1 and 2.
  • heating lamps 16 are provided for heating a substrate 2 received on the substrate holder 10.
  • two pyrometers 70 are shown for temperature detection.
  • other heating devices can also be used in this embodiment, such as a resistance heater, which is integrated in the conveyor belt 60 itself, or a resistance heater which may for example be arranged closely spaced below the upper run of the conveyor belt 60.
  • the second microwave plasma assembly 7 in the embodiment according to FIG. 3 is provided as a stationary microwave plasma assembly 7 and consists of a plurality of microwave electrodes 50 which may be of the type described above.
  • the microwave electrodes 50 each extend across a transport path of the conveyor belt 60 away, and are suitable above this transport path to produce a high-density microwave e) lenplasma.
  • the vacuum housing in the region of the second microwave plasma arrangement 7 has a sloping upper wall portion in order to provide an oblique and a planar arrangement of the microwave electrodes 50 can.
  • the microwave electrodes 50 are arranged such that they are spaced from an input region of the vacuum housing 3 further from the substrate holder 10 and are then arranged closer to the interior of the vacuum housing 3 closer to the substrate holder 10.
  • the assembly then becomes flat, i. they are arranged at the same distance to the substrate holder.
  • a partition wall 72 is further provided, which separates the action areas of the first and second microwave plasma assemblies from each other. In this case, no complete separation is provided, since the treatment areas are provided within the same vacuum housing 3. However, a certain separation of the respective process areas can be achieved by the partition 72. The operation of the device will be explained below with reference to Figures 4A to D.
  • FIGS. 4a to 4c The device 1 illustrated in FIGS. 4a to 4c is constructed substantially in the same manner as the device 1 according to the figures
  • FIG. 4 a shows the microwave electrode 50, as it is moved into the process chamber 8, and is located above a substrate 2 located on the substrate holder 10.
  • the opening 23 in the vacuum chamber 3 is opened, and the process chamber 8 is sealed from the environment by the bellows 52.
  • the opening 20 in the vacuum housing 3 is opened, and the process chamber 8 is sealed to the environment via the sealing unit 44.
  • the tubular microwave electrode 30 is supplied with microwaves, and a plasma is formed inside the microwave electrode 30.
  • a jet of hydrogen and / or deuterium-containing gas is passed through the plasma via the gas introduction unit 36, in particular via the outer tube 40, in order to generate a beam 82 of hydrogen and / or deuterium radicals which is incident on the substrate
  • the beam 82 is swept across the substrate by a corresponding movement of the microwave electrode 30 to clean it and / or to passivate it with hydrogen and / or deuterium.
  • the jet may also sweep over portions of the process chamber to clean them.
  • the microwave electrode 50 Simultaneously or subsequently, the microwave electrode 50 generates a high-density hydrogen and / or deuterium plasma 84 above the substrate 2. This serves to remove oxides on the surface of the substrate 2. Subsequently, the microwave electrode 50 is moved to the rest position, as can be seen in Fig. 4b, and the opening 23 in the side wall of the vacuum housing 3 is closed by the door member 24. (In the embodiment according to FIG. 3, the hydrogen and / or deuterium plasma would be generated in the region of the microwave electrodes 50 under which a substrate is passed before it reaches the region of the radical rays generated by the microwave electrode 30). In the meanwhile, or also subsequently, the process chamber can be rinsed with a purge gas, such as hydrogen and / or deuterium.
  • a purge gas such as hydrogen and / or deuterium.
  • a microwave plasma is further generated, and it is passed through the outer tube 40, a stream of hydrogen and / or deuterium-containing gas through the plasma to further a beam 82 of hydrogen and / or deuterium radicals on the substrate 2 to judge.
  • a precursor gas flow is passed through the plasma via the inner tube 42, for example from a precursor gas such as SiH 4 , GeH 4 , PH 3) B2H6, AsH 3 .
  • a beam 86 of precursor gases is formed, which is surrounded by the beam 82 of hydrogen and / or deuterium radicals. Together, these two beams form an overall process beam that is stroked across the substrate by appropriate movement of the support and movement unit 34.
  • the substrate 2 may be heated to a desired temperature, for example in the range of 400 ° C., during this and the preceding process step.
  • FIG. 4c shows a cleaning step which can be carried out after or before a previously described deposition process, optionally followed by flushing of the process chamber with hydrogen or deuterium.
  • a microwell electrode 30 generated rowelle plasma.
  • a beam of fluorine-containing gas such as NF 3
  • NF 3 a beam of fluorine radicals 88 directed at the substrate receptacle 10.
  • the beam 88 can be deleted by a corresponding movement of the carrying and moving unit 34 via the substrate receiving and to be cleaned areas of the process chamber 8.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif servant à traiter des substrats qui comporte une enceinte entourant une chambre de traitement ainsi qu'au moins un support de substrat dans l'enceinte. Le dispositif comporte en outre une électrode à micro-ondes tubulaire servant à produire un plasma, l'axe du tube étant dirigé vers le support de substrat, ainsi qu'une unité de déplacement, qui porte l'électrode à micro-ondes ou le support de substrat et qui est adaptée pour déplacer l'électrode à micro-ondes ou le support de substrat de telle sorte que l'axe du tube balaie le support de substrat pendant un traitement. Le dispositif comprend de plus une première conduite de gaz avec une première sortie qui s'ouvre dans l'électrode à micro-ondes tubulaire et qui est dirigée vers le support de substrat et une deuxième conduite de gaz qui entoure au moins partiellement la première conduite de gaz et comporte une deuxième sortie qui est dirigée coaxialement à la première sortie, les première et deuxième conduites de gaz étant reliées à l'unité de déplacement, pour être déplacées en même temps que l'électrode à micro-ondes, et les première et deuxième conduites de gaz pouvant être alimentées par des sources de gaz différentes. L'invention concerne aussi un procédé servant à traiter des substrats dont les étapes consistent à conduire un faisceau de gaz contenant de l'hydrogène et/ou du deutérium à travers un premier plasma à micro-ondes qui est séparé du substrat à traiter, pour constituer un faisceau de radicaux d'hydrogène et/ou de deutérium, le faisceau de radicaux d'hydrogène et/ou de deutérium étant dirigé vers le substrat à traiter, à conduire un faisceau de gaz précurseurs à travers le plasma à micro-ondes de telle manière que le faisceau de gaz précurseurs soit entouré par le faisceau de radicaux d'hydrogène et/ou de deutérium, et qu'ils constituent un faisceau de traitement commun qui est dirigé vers le substrat à traiter, et à balayer le faisceau de traitement au-dessus du substrat à traiter pour déposer une couche épitaxique sur le substrat, le balayage étant actionné par un déplacement correspondant d'une première électrode à micro-ondes et de buses d'introduction de gaz pour le gaz contenant de l'hydrogène et/ou du deutérium et les gaz précurseurs.
PCT/EP2011/001553 2010-03-26 2011-03-28 Dispositif et procédé de traitement de substrats WO2011116991A1 (fr)

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DE102010013042 2010-03-26

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WO2020205086A1 (fr) * 2019-04-02 2020-10-08 Applied Materials, Inc. Procédé et appareil de gravure inclinée

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