WO2011116989A2 - Détecteur d'imagerie par rayonnement avec lecture de transfert de charge - Google Patents

Détecteur d'imagerie par rayonnement avec lecture de transfert de charge Download PDF

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Publication number
WO2011116989A2
WO2011116989A2 PCT/EP2011/001543 EP2011001543W WO2011116989A2 WO 2011116989 A2 WO2011116989 A2 WO 2011116989A2 EP 2011001543 W EP2011001543 W EP 2011001543W WO 2011116989 A2 WO2011116989 A2 WO 2011116989A2
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Prior art keywords
electrodes
radiation
charge
dielectric layer
electrode
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PCT/EP2011/001543
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English (en)
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WO2011116989A3 (fr
Inventor
Jules Hendrix
Denny L. Lee
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Jules Hendrix
Lee Denny L
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Publication of WO2011116989A2 publication Critical patent/WO2011116989A2/fr
Publication of WO2011116989A3 publication Critical patent/WO2011116989A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14659—Direct radiation imagers structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers

Definitions

  • the invention relates to an image capture panel for recording x-ray image information. More particularly, the invention relates to a method and apparatus for capturing the x-ray image and reading out the image signal without using a large area thin film transistor (TFT) array.
  • TFT thin film transistor
  • Digital X-ray radiogram can be produced by using layers of radiation sensitive materials to capture incident X-ray as image-wise modulated patterns of light intensity (photons) or as electrical charges. Depending on the intensity of the incident X-ray radiation, electrical charges generated either electrically or optically by the X-ray radiation within a pixel area are quantized using a regularly arranged array of discrete solid state radiation sensors.
  • U.S. Pat. No. 5,319,206 issued to Lee et al. on Jun. 7, 1994 and assigned to E. I.
  • du Pont de Nemours and Company describes a system employing a layer of photoconductive material to create an image-wise modulated areal distribution of electron-hole pairs which are subsequently converted to corresponding analog pixel (picture element) values by electro-sensitive devices, such as thin-film transistors (TFT).
  • electro-sensitive devices such as thin-film transistors (TFT).
  • TFT thin-film transistors
  • U.S. Pat. No. 5,262,649 (Antonuk et al.) describes a system employing a layer of phosphor or scintillation material to create an image-wise modulated distribution of photons which are subsequently converted to a corresponding image-wise modulated distribution of electrical charges by photosensitive devices, such as two dimensional amorphous silicon photodiodes.
  • Indirect Conversion systems e.g. U.S. Pat. No. 5,262,649 that utilize a scintillation material to create an image-wise modulated distribution of photons from the absorbed X-ray energy
  • photons generated from the absorbed X-ray may undergo multiple scattering or spreading before they are detected by the two dimensional photosensitive device, resulting with degradation of image sharpness or a lower TF (Modulation Trans- fer Function) .
  • the degradation of image sharpness is significant especially for a thicker layer of scintillation material is required to capture sufficient x-ray quanta for image forming .
  • Direct Conversion systems Fig. 1 utilizing a photoconduc- tive material, such as selenium described in U.S. Pat. No.
  • an electrical potential is applied to the top electrode to provide an appropriate electric field.
  • electron-hole pairs (indicated as - and +) are generated in the photoconductive layer (referred to in Fig. 1 as "X-ray Semiconductor") in response to the intensity of the image-wise modulated pattern of X-ray radiation, and these electron-hole pairs are separated by the applied bi- asing electric field supplied by a high voltage power supply.
  • the electron-hole pairs move in opposite directions along the electric field lines toward opposing surfaces of the photoconductive layer.
  • a charge image is stored in the storage capacitor of the TFT array. This image charge is then readout by an orthogonal array of thin film transistors and charge integrating amplifiers.
  • the image sharpness or MTF is preserved regardless of the thickness of the photocon- ductive material.
  • Thicker X-ray conversion material can be used to absorb sufficient X-ray energy without compromising the resulted image quality.
  • Conventional large area thin film transistor arrays used for both Direct Conversion systems and Indirect Conversion systems consist of a large number of image data lines and control gates lines orthogonal to each other. For example, for an imaging detector with 7.8 Mega pixels, there are 3072 TFT data lines and 2560 TFT gate lines.
  • gate lines are turned on one at a time, allowing the image information from all the transistors from a column with the common gate line to turn on and transfer the image charge information to the corresponding rows of TFT data lines orthogonal to the TFT gate lines.
  • the image information from each data line is then digitized by operational amplifiers and analog-to-digital converters (ADC) connected to each data line.
  • ADC analog-to-digital converters
  • each data line in the TFT will cross over a large number of gate lines inside the TFT panel.
  • Each data line is separated from each gate lines in the TFT array by a thin layer of insulator at each cross over point resulting in a small capacitance between the data line and the gate line. Due to the large number of gate lines that each data line has to cross over, the accumulated capacitance is not negligible. For a panel of 7.8 Mega Pixels or 3072X2560 lines, the accumulative capacitance of each data line is typically in the order of 50 pico-farards (pf ) .
  • the ground line connecting the ground return current from each transistor in the TFT is usually running parallel to the data lines in order to minimize the data line capacitance.
  • Each gate line in the TFT will therefore need to cross over both the data lines and the ground lines and resulting in a gate line capacitance of about two times the data line capacitance.
  • a charge amplifier is an operational amplifier with a charge integrating capacitor configured in the high gain amplifier feedback circuit as shown in Fig. 3.
  • Fig. 3 also includes the frequency-independent "thermal noise gain" term:
  • the data line capacitance ( Ci ) in the input node of the operational amplifier and the feedback capacitor (C 2 ) in the operational amplifier configured as a charge-to-voltage converter will therefore function as a noise amplifier magnifying the thermal noise of the charge amplifier and the chain of components in the data lines by a gain factor equal to the ratio of the data line capacitance to the feedback capacitance.
  • the thermal noise gain will be 26. Low dose x-ray information with signal strength less than the magnified noise level will be buried in the noise and not be detected. The high level of background noise is therefore a significant disadvantage of systems known in the art.
  • the gate control voltage is normally switched from a negative voltage of about -5 volts for maximum TFT "off" resistance to a positive voltage of +7 volts or higher to allow a low resistive "on” state for the transistor.
  • This swing of 12 volts or more gate control voltage will inject charges Q L equal to AV times C to the TFT storage capacitor containing the image information as well as to the data line connected to the charge amplifier, where AV is the change of control gate voltage from an off state to an on state and where C is the parasitic capacitance between the gate terminal and the drain terminal or the source terminal of the field effect transistor (FET) in the TFT.
  • FET field effect transistor
  • the speed of image readout depends on how fast each gate line can be turned on and off for the process of image data integration.
  • Large gate line capacitance will limit the speed of the gate switching operation, which is a significant disadvantage of systems known in the art. It is therefore desirable to minimize the gate line capacitance for high readout speed operation required by high frame rate imaging or dynamic imaging.
  • the problem of the invention has therefore been to provide a detector system that is able to perform low noise image capture and fast readout operation, and that therefore avoids the significant disadvantages of Thin Film Transistor (TFT) arrays that are known in the art.
  • the invention has solved this problem by providing the radiation imaging detector and a method of using such detector for detecting radiation as described herein and according to the claims.
  • the invention further provides a method of constructing an imaging array without using TFT for low noise operations.
  • Fig. 1 shows a prior art flat panel x-ray detector using thin-film transistors (TFTs);
  • Fig. 2 shows the arrangement of gate lines and data lines in a conventional TFT array
  • Fig. 3 shows the equivalent noise gain circuit of a charge amplifier
  • Fig. 4 is an exemplary horizontal layout drawing of a
  • section of 4 by 4 pixel of the present invention showing an arrangement of Charge Accumulation Electrodes, column pixel lines, field shaping electrodes, and output data lines;
  • Fig. 5 is an exemplary vertical cross section of the
  • Fig. 6 is an enlarged view of the bottom middle section of
  • Fig. 7 shows the electrical field lines of the detector in x-ray image accumulating mode
  • Fig. 8 is an enlarged view of the electrical field lines terminating on the insulating interface above the charge accumulation electrode
  • Fig. 9 shows an enlarged view of Fig. 4 and shows that the electric field lines are terminating above the charge accumulation electrode
  • Fig. 10 shows the electrical field lines of the detector in image charge transfer and readout mode
  • Fig. 11 shows the enlarged view of Fig.10, the change of
  • Fig. 12 shows the connection between the data lines and the charge amplifiers.
  • the invention provides a flat panel consisting of a layer of photoconductive material (e.g. Selenium) .
  • the absorbed X-rays produce electric charges in this layer.
  • the charges are col ⁇ lected on one storage capacitor per pixel, the so-called pixel-capacitor.
  • the read-out of the image information is car ⁇ ried out by transferring these charges from the storage capacitor onto read-lines.
  • the charges are read-out from the read-lines by means of one charge-sensitive-amplifier per read-out line.
  • the advantage of this system is that the TFT transistor is, thus, obsolete and is eliminated.
  • the TFT is the major source of the noise in the present flat-panel read-out system.
  • the invention provides a radiation imaging detector compris ⁇ ing: a) a first dielectric layer (1), b) a plurality of electric field shaping electrodes (2) deposited on the first dielectric layer (1), c) a charge accumulating electrode (3) deposited on the first dielectric layer (1), d) a second dielectric layer (4) deposited over the electric field shaping electrodes (2) and the charge accumulating electrode (3), e) readout electrodes (5) deposited over the second dielectric layer (4) , f) a radiation charge conversion layer (6) deposited over the second dielectric layer (4) and the readout electrodes
  • the radiation imaging detector of the invention can function without the need for a thin film transistor (TFT) . Avoiding the need for a TFT transistor can be one technical advantage of the detector according to the invention in that a major source of noise that is a disadvantage of the systems known in the art is eliminated.
  • TFT thin film transistor
  • the radiation imaging detector of the invention can further comprise: h) a first bias potential applied to the top bias electrode (7) to direct the radiation generated charges to move toward the charge accumulating electrode (3), i) a second bias potential applied to the field shaping electrodes (2) adjacent to the readout electrodes (5) to direct the charges away from the readout electrodes (5), and j) a third bias potential applied to the charge accumulating electrode (3) to direct the charges to the interface between the second dielectric layer (4) and the radiation charge conversion layer (6).
  • Figure 8 shows the shape of the equal potential lines (9a) and the electric field lines (10) in this charge accumulation mode .
  • the radiation imaging detector can further comprise: h) a first bias potential applied to the top bias electrode (7), i) a second bias potential applied to the electric field shaping electrodes (2) adjacent to the readout electrodes (5), and j) a third bias potential applied to one line of the charge accumulating electrodes (3) is changed to direct the charges accumulated on the interface between the second dielectric layer (4) and the radiation charge conversion layer (6) of the said line to move to the adjacent readout electrodes (5) .
  • one line of information can be read out. This step can be repeated for each column of lines connecting one column of charge accumulating electrodes (3) until the entire panel is read out and a complete x-ray image is formed.
  • Figure 10 shows the equal potential lines (9a) and the electrical field lines (10) in this charge transfer mode.
  • the plurality of electric field shaping electrodes (2) can comprise the electric field shaping electrodes (2a), (2b) and (2c) .
  • any number of additional electric field shaping electrodes (2d), (2e) , (2f) etc. can be comprised in said plurality of electric field shaping electrodes (2).
  • the radiation imaging detector can further comprise: k) a plurality of column pixel lines (8) . (column pixel lines (8) are necessary element of this invention)
  • the radiation imaging detector can further comprise: 1) a plurality of charge amplifiers (9) connected to each of the readout electrodes (5) to form a radiation image.
  • the second dielectric layer (4) can comprise silicon dioxide (Si0 2 ) .
  • the invention further provides the use of the radiation imaging detector of the invention as described herein for detecting radiation.
  • the invention further provides a method for detecting radiation comprising the steps of: a) providing the radiation imaging detector of the invention , b) generating a read out image signal, and c) detecting said read out image signal.
  • step b) can comprise: i) applying a first bias potential to the top bias electrode (7) to direct the radiation generated charges to move toward the charge accumulating electrode (3), ii) apply- ing a second bias potential to the field shaping electrodes (2) adjacent to the readout electrodes (5) to direct the charges away from the readout electrodes (5), and iii) applying a third bias potential to the charge accumulating electrode (3) to direct the charges to the interface between the second dielectric layer (4) and the radiation charge conversion layer (6) .
  • Figure 8 shows the shape of the equal potential lines (9a) and the electric field lines (10) in this charge accumulation method.
  • step b) can comprise: i) applying a first bias potential to the top bias electrode (7), ii) applying a second bias potential to the field shaping electrodes (2) adjacent to the readout electrodes (5), and iii) changing a third bias potential to one column of the charge accumulating electrodes (3) to direct the charges to the interface between the second dielectric layer (4) and the radiation charge conversion layer (6) of the said column to move to the adjacent readout electrodes.
  • Figure 10 shows the equal potential lines (9a) and the electric field lines (10) in this charge transfer method.
  • the invention provides a detector structure comprising a dielectric substrate or first dielectric layer (1), with a rectangular array of Charge Accumulation Elec- trodes, P(x,y)'s (3), Field Shaping Electrodes GX's, (2a) and Field Shaping Electrodes GY' s (2b, 2c) , as shown in Figure 1, deposited on one surface of said dielectric substrate or first dielectric layer (1). All Charge Accumulating Electrodes (3) with the same Y direction are connected by a select line SX
  • the select line SX (8) can be the column pixel line (8) .
  • the cross over area of the select lines SX' s is electrically isolated from the Field Shaping Electrodes (2b, 2c) running in the Y direction by insulating materials.
  • a second layer of dielectric material (4), the second dielectric layer (4), such as Si02, with a thickness of 0,1 to 5 um is then deposited on top of the P(x,y)'s (3), GX's (2a) and GY' s (2b, 2c).
  • a set of data lines DY' s (5) are deposited between the P(x,y) electrode and the GY (2c), Field Shaping Electrode lines.
  • the set of data lines DY' s (5) can be the readout electrodes (5) .
  • the radiation charge conversion layer (6) such as amorphous selenium with sufficient thickness for radiation absorption is deposited on top of the said second dielectric layer (4) and data lines (5), wherein the latter can be the readout electrodes (5) .
  • a top bias electrode (7) is then deposited on the top surface of the radiation charge conversion layer (6).
  • a high voltage bias the first bias potential
  • the top bias electrode (7) developing an electric field between the top electrode and the bottom electrodes, wherein the latter are the charge accumulating electrodes (3) . With the exposure of radiation, electron-hole pairs will be generated in the radiation charge conversion layer (6).
  • a positive high voltage bias is used. Holes generated by the radiation such as x-ray will be driven by the bias field toward the bottom of the detector, to the second dielectric layer (4).
  • a second positive bias potential is also applied to the Field Shaping Electrodes (2) adjacent to the data lines (5), or readout electrode (5), and between the data readout electrode (5) and the charge accumulating electrode (3).
  • each of the data lines (5) or readout electrode (5) is connected to a charge integrating amplifier (9), or charge amplifier (9), the data line potential is at zero volt, or near zero volts.
  • the Charge Accumulation Electrode (3) is biased with a third bias potential in the negative range. With appropriate voltages, the all the electric field lines starting from the top high voltage electrode (7) will be directed to the bottom of the detector and all ending on the dielectric layer (4) between the radiation charge conversion layer (6) and the charge accumulating electrode (3). Holes generated by the radiation within one pixel area will be accumulated at this pixel dielectric interface. At the end of x-ray exposure, the potential of one selected line of the charge accumulating electrode (3) will be changed from negative to positive.
  • the potential of the charge accumulating electrode (3) will be returned to negative and the potential of the next charge accumulating electrode line will be changed to positive value, reversing the electric field on the dielectric interface of this next line. Pixel charges previously accumulated on this line will then be transferred to the orthogonal data lines adjacent to the pixel. This action will be repeated until the image charges of the whole panel is read out.
  • TFT panels in the Prior Arts consist of orthogonal arrays of pixels addressed by orthogonal gate lines and data lines.
  • the thinkness of the insulating material between the gate lines and the data lines is typically 200nm to 400nm normally limited by the TFT manufacturing process.
  • the parasitic capacitance from the crossover of these gate lines and data lines inside the TFT structure result in a sizable data line capacitance.
  • the thermal noise is greatly am- plified by the ratio of the data line capacitance and the feedback capacitor of the charge amplifier.
  • the switching of the gate voltage that is typically 12 volts or higher also contributes to the switching noise in the readout image.
  • conventional TFT manufacturing process is not used.
  • the insulating spacing in the crossing of data lines to the orthogonal Field Shaping Electrode lines and charge accumulating electrode lines can be greatly increased.
  • each pixel consists of one or more charge accumulation electrodes (3) separated from the radiation absorption and charge conversion layer (6) by a thin layer of the second dielectric material (4) such as one micron of silicon dioxide as shown in Figures 5 and 6. All the charge accumulation electrodes (3) in the same column are connected by column pixel lines (8) and are connected to a first variable voltage power supply.
  • Each of the charge accumulation elec- trode (3) is surrounded by lines of field shaping electrodes (2a, 2b, 2c, or more...) also covered by a layer of the second dielectric material (4) such as one micron of silicon dioxide as shown in Figure 5 and 6.
  • All the field shaping electrodes (2's), i.e. the plurality of electric field shaping electrodes (2), are connected to one or more switchable voltage power supplies.
  • Running orthogonal to the column pixel lines (8) are the output data lines (5), or readout electrodes (5), which are also sandwiched by two field shaping electrodes (2's) .
  • an appropriate high voltage bias is applied to the top electrode (7) producing a mostly uniform electric field throughout the bulk of the x-ray absorption and charge generation layer (6) such as selenium.
  • a positive voltage of 1KV over ⁇ of selenium can be used resulting with an electric field of 5 volts per micron throughout most of the bulk of selenium layer.
  • a potential of 1.1KV can be applied to the field shaping electrodes adjacent to the output data electrode and the charge accumulation pixel electrodes. As shown in Figure 12, with the output data electrodes (5) connected to the charge amplifiers (9), the potential of the data electrodes can bear near zero volts range.
  • a negative voltage of -200 volts can be applied to all the charge accumulation pixel electrodes (3) . With this distribution of potentials, all the electric field lines (10) starting from the top high voltage bias electrode can terminate on the top surface of the second dielectric material (4) above the charge accumulation pixel electrodes (3).
  • Electrons can be driven by the electric field to the top high voltage electrode (7) and holes can be driven by the electric field (10) to the bottom of the detector. Since all the electric field lines (10) with the distribution of shaping potentials can be terminated above the pixel electrodes (3), all the x-ray radiation generated holes can be driven by the electric field (10) and can be accumulated on the dielectric interface (4) separation the selenium layer (6) and the pixel electrode (3) as shown in Figure 9.
  • the x-ray image can be represented by the amount of charges accumulated over the detector on the interface area above each pixel electrode (3) .
  • one column of the charge accumulation pixel electrode potential can be changed from negative to positive, such as from -200 volts to positive +1000 volts.
  • the electric field above the pixel electrode can be reversed and the electric field lines (10) can initiate from the dielectric interface and terminate at the output data electrode which was still at zero volts.
  • Positively charged holes accumulated on the column of the pixel dielectric interface during the x-ray exposure can now driven by this new distribution of electric field (10) as shown in Figure 10 and Figure 11 and can move from the dielectric interface (4) to the adjacent output data lines (5) and be integrated by the charge amplifiers connected to each line as shown in Figure 12. Image information of one column is therefore acquired.
  • the potential of the said column will return to the negative value and a next pixel column (8) is changed from nega- tive to positive pushing the image charges of this next column (8) to the rows of data lines (5).
  • This action can be repeated until all the charges on the imaging panel is readout.
  • more than 2 charge accumulation electrodes can be used in each pixels surrounded by more field shaping electrodes, so that the charges accumulated by each pixel during x-ray exposure can be distributed over more than 2 charge accumulation electrodes.
  • a positive voltage of 1KV over ⁇ of selenium was used resulting with an electric field of 5 volts per micron throughout most of the bulk of selenium layer.
  • a potential of 1.1KV was also applied to the field shaping electrodes adjacent to the output data electrode and the charge accumulation pixel electrodes. As shown in Figure 12, with the output data electrodes (5) connected to the charge amplifiers (9), the potential of the data electrodes was near zero volts range.
  • a negative voltage of -200 volts was applied to all the charge accumulation pixel electrodes (3) . With this distribution of potentials, all the electric field lines (10) starting from the top high voltage bias electrode terminated on the top surface of the second dielectric material (4) above the charge accumulation pixel electrodes (3) .
  • one column of the charge accumulation pixel electrode potential was changed from negative to positive, such as from -200 volts to positive +1000 volts.
  • the electric field above the pixel electrode were reversed and the electric field lines (10) initiated from the dielectric interface and terminated at the output data electrode which was still at zero volts.
  • Positively charged holes accumulated on the column of the pixel dielectric interface during the x-ray exposure were now driven by this new distribution of electric field (10) as shown in Figure 10 and Figure 11 and moved from the dielectric interface (4) to the adjacent output data lines (5) and were integrated by the charge amplifiers connected to each line as shown in Figure 12.
  • Image information of one column was there- fore acguired.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Apparatus For Radiation Diagnosis (AREA)

Abstract

L'invention concerne un détecteur d'imagerie par rayonnement comprenant: a) une première couche diélectrique (1); b) plusieurs électrodes de mise en forme de champ électrique (2) déposées sur la première couche diélectrique (1); c) une électrode d'accumulation de charge (3) déposée sur la première couche diélectrique (1); d) une seconde couche diélectrique (4) déposée sur les électrodes de mise en forme de champ électrique (2) et l'électrode d'accumulation de charge (3); e) des électrodes de lecture (5) déposées sur la seconde couche diélectrique (4); f) une couche de conversion de charge de rayonnement (6) déposée sur la seconde couche diélectrique (4) et sur les électrodes de lecture (5); et g) une électrode de polarisation supérieure (7). L'invention concerne également un procédé de détection de rayonnement comprenant les étapes consistant à a) utiliser le détecteur d'imagerie par rayonnement décrit ci-dessus, b) générer un signal d'image de lecture, et c) détecter ledit signal d'image de lecture.
PCT/EP2011/001543 2010-03-26 2011-03-28 Détecteur d'imagerie par rayonnement avec lecture de transfert de charge WO2011116989A2 (fr)

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DE102010013115.6 2010-03-26
DE201010013115 DE102010013115A1 (de) 2010-03-26 2010-03-26 Auslesesystem für Flachbildschirme-Röntgendetektoren unter Vermeidung von Dünnfilmtransistoren

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017171414A1 (fr) 2016-03-31 2017-10-05 Vieworks Co., Ltd. Détecteur d'imagerie par rayonnement à gain de charge proportionnel pendant la lecture

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