WO2011108463A1 - Annealing device, annealing method, and thin-film substrate manufacturing system - Google Patents

Annealing device, annealing method, and thin-film substrate manufacturing system Download PDF

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Publication number
WO2011108463A1
WO2011108463A1 PCT/JP2011/054328 JP2011054328W WO2011108463A1 WO 2011108463 A1 WO2011108463 A1 WO 2011108463A1 JP 2011054328 W JP2011054328 W JP 2011054328W WO 2011108463 A1 WO2011108463 A1 WO 2011108463A1
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WIPO (PCT)
Prior art keywords
substrate
thin film
annealing
electromagnetic wave
frequency
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PCT/JP2011/054328
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French (fr)
Japanese (ja)
Inventor
正裕 清水
進 有馬
秀典 奥崎
知行 大谷
将嗣 山下
Original Assignee
東京エレクトロン株式会社
国立大学法人山梨大学
独立行政法人 理化学研究所
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Publication of WO2011108463A1 publication Critical patent/WO2011108463A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Definitions

  • the present invention relates to an annealing apparatus, an annealing method, and a thin film substrate manufacturing system for annealing a thin film on a substrate surface.
  • Patent Document 1 discloses an annealing apparatus that can efficiently cool a light emitting element without degrading maintainability.
  • the glass transition point of the substrate may be lower than the annealing temperature of the thin film.
  • the substrate may be deformed and the thin film may be peeled off from the substrate. Therefore, the substrate material is limited to those having a glass transition point higher than the annealing temperature of the thin film.
  • the present invention has been made in view of such circumstances, and an object of the present invention is to provide an annealing apparatus and an annealing apparatus capable of heating the thin film to a higher temperature among the thin film formed on the substrate and the substrate surface.
  • a method and a thin film substrate manufacturing system are provided.
  • the substrate and the thin film formed on the surface of the substrate are irradiated with electromagnetic waves and heated, and in the annealing apparatus for annealing the thin film, based on the film thickness and resistivity of the given thin film, It is characterized by comprising calculation means for calculating the frequency of the electromagnetic wave applied to the substrate and the thin film, and electromagnetic wave supply means for applying the electromagnetic wave having the frequency calculated by the calculation means to the substrate and the thin film.
  • the annealing apparatus is characterized in that the calculation means calculates the frequency of the electromagnetic wave so that the penetration depth of the electromagnetic wave into the thin film corresponds to the film thickness of the thin film.
  • the annealing apparatus is characterized in that the electromagnetic wave supply means heats the thin film to a higher temperature than the substrate.
  • the annealing apparatus includes a cooling means for cooling the substrate.
  • the substrate and the thin film formed on the substrate surface are irradiated with electromagnetic waves and heated, and the thin film is annealed, the substrate and the thin film formed on the basis of the thickness and resistivity of the thin film
  • the frequency of the electromagnetic wave irradiated to the thin film is calculated, and the thin film is heated to a higher temperature than the substrate using the electromagnetic wave having the calculated frequency.
  • the annealing method according to the present application is characterized in that the substrate is made of an organic material.
  • the annealing method according to the present application is characterized in that the substrate is cooled.
  • the thin film substrate manufacturing system is provided with a film forming apparatus for forming a thin film on the surface of the substrate in the process of unwinding the flexible substrate wound around the unwinding roll and winding it on the winding roll.
  • the thin film substrate manufacturing system includes the above-described annealing apparatus that anneals the thin film formed by the film forming apparatus under arbitrary annealing conditions, and the physical property measuring apparatus that measures the physical properties of the thin film annealed by the annealing apparatus.
  • the thin film substrate manufacturing system includes a control device that receives a signal from the physical property measuring device and controls the operation of the film forming device, and the film forming device, the annealing device, and the physical property measuring device include the unwinding roll.
  • the physical property measuring device includes a transmission unit that transmits a predetermined signal to the control device, and the control device includes a transmission unit of the physical property measurement device. It has a means for stopping the operation of the film forming apparatus when the transmitted predetermined signal is received.
  • the control device sets an annealing condition of the annealing device, and when the predetermined signal transmitted by the transmission unit of the physical property measuring device is received, the annealing device Means for changing the annealing conditions.
  • the thin film substrate manufacturing system includes substrate transfer means for unwinding and transferring the substrate from an unwinding roll at an arbitrary transfer speed, and winding the thin film substrate having a thin film formed on the substrate surface on a winding roll.
  • the control device controls the transfer speed of the substrate transfer means, and changes the transfer speed of the substrate transfer means when receiving the predetermined signal transmitted by the transmission means of the physical property measuring apparatus. It has the means to do.
  • the calculating means calculates the frequency of the electromagnetic wave applied to the substrate and the thin film formed on the surface of the substrate based on the given thin film thickness and thin film resistivity.
  • the electromagnetic wave supply means irradiates the substrate and the thin film with electromagnetic waves having the calculated frequency.
  • the calculation means is based on the film thickness of the thin film and the resistivity of the thin film so that the penetration depth of the electromagnetic wave with respect to the thin film formed on the substrate surface corresponds to the film thickness of the thin film. Calculate the frequency of the electromagnetic wave.
  • the electromagnetic wave supply means irradiates the substrate and the thin film with electromagnetic waves of the calculated frequency, and heats the thin film to a higher temperature than the substrate.
  • the cooling means cools the substrate.
  • the frequency of electromagnetic waves applied to the substrate and the thin film is calculated based on the film thickness and resistivity of the thin film formed on the substrate surface.
  • the substrate and the thin film are irradiated with an electromagnetic wave having the calculated frequency, and the thin film is heated to a higher temperature than the substrate.
  • the substrate irradiated with electromagnetic waves is made of an organic material.
  • the substrate and the thin film are irradiated with electromagnetic waves while the substrate is cooled.
  • the thin film substrate manufacturing system includes a film forming apparatus, an annealing apparatus, and a physical property measuring apparatus.
  • the film forming apparatus forms a thin film on a flexible substrate surface.
  • the annealing apparatus is the above-described annealing apparatus that anneals the thin film formed by the film forming apparatus under an arbitrary annealing condition.
  • the physical property measuring device measures the physical properties of the thin film annealed by the annealing device.
  • the thin film substrate manufacturing system includes a control device that receives a signal from the physical property measuring device and controls the operation of the film forming device.
  • the film forming apparatus, the annealing apparatus, and the physical property measuring apparatus are arranged along a transfer path between the unwinding roll and the winding roll.
  • the physical property measuring device transmits a predetermined signal to the control device.
  • the control device stops the operation of the film forming device when receiving a predetermined signal transmitted from the physical property measuring device.
  • the control device sets the annealing conditions of the annealing device.
  • the control device changes the annealing condition of the annealing device when receiving a predetermined signal transmitted from the physical property measuring device.
  • the thin film substrate manufacturing system includes substrate transfer means for transferring the substrate.
  • the control device for controlling the transfer speed of the substrate transfer means changes the transfer speed of the substrate transfer means when receiving a predetermined signal transmitted from the physical property measuring apparatus.
  • the thin film can be heated to a higher temperature.
  • FIG. 1 is a block diagram of an annealing apparatus according to a first embodiment.
  • 1 is a block diagram of a computer according to Embodiment 1.
  • 3 is a flowchart showing a procedure of annealing treatment of the annealing apparatus according to the first embodiment.
  • 3 is a flowchart showing a procedure of annealing treatment of the annealing apparatus according to the first embodiment.
  • 6 is a block diagram of a thin film substrate manufacturing system according to Embodiment 2.
  • FIG. FIG. 6 is a block diagram of an annealing apparatus according to a second embodiment.
  • FIG. 6 is a block diagram of a computer according to a second embodiment.
  • 10 is a flowchart illustrating a procedure of processing executed by a control unit of a computer according to Embodiment 2.
  • FIG. 6 is a block diagram of an annealing apparatus according to
  • Embodiment 1 The first embodiment relates to an annealing apparatus that anneals a thin film formed on a substrate surface by induction heating of electromagnetic waves.
  • the frequency for selectively heating the thin film on the substrate surface is calculated as the frequency of the electromagnetic wave applied to the sample. Then, the thin film is annealed using the electromagnetic wave having the calculated frequency.
  • FIG. 1 is a block diagram of an annealing apparatus 1 according to the first embodiment.
  • An annealing apparatus 1 according to Embodiment 1 includes a processing container 2, a gas introduction mechanism 3, an exhaust mechanism 4, a mounting table 5, a radiation thermometer 6, a thermoelectric conversion element control unit 7, an electromagnetic wave supply unit 8, and a computer 9.
  • the annealing apparatus 1 may not include the computer 9 by externally attaching the computer 9.
  • the processing container 2 is formed in a rectangular parallelepiped shape with aluminum, for example, and is grounded. A ceiling portion of the processing container 2 is opened, and a top plate 22 is airtightly provided in the opening portion via a seal member 21.
  • the material of the top plate 22 is, for example, quartz, aluminum nitride or the like.
  • the shape of the processing container 2 is not limited to a rectangular parallelepiped shape whose upper portion is opened, and may be a columnar shape or a box shape.
  • An opening 23 is provided on the side wall of the processing container 2, and a gate valve 24 that opens and closes the opening 23 when the substrate K and the thin film H of the sample S are carried into and out of the processing container 2 is provided.
  • An exhaust port 25 connected to the exhaust mechanism 4 is provided at the peripheral edge of the bottom of the processing container 2.
  • the gas introduction mechanism 3 includes two gas nozzles 31 ⁇ / b> A and 31 ⁇ / b> B that penetrate the side wall of the processing container 2, and supplies a gas necessary for processing to the processing container 2 from a gas supply source (not shown).
  • the gas here is, for example, an inert gas such as argon or helium, nitrogen, or the like.
  • the number of gas nozzles 31A and 31B is not limited to two, and may be increased or decreased as appropriate.
  • the exhaust mechanism 4 includes an exhaust passage 41 through which exhaust flows, a pressure control valve 42 that controls the exhaust pressure, and an exhaust pump 43 that exhausts the atmosphere inside the processing container 2.
  • the exhaust pump 43 can exhaust the atmosphere inside the processing container 2 to a reduced pressure level including a vacuum via the exhaust passage 41 and the pressure control valve 42.
  • the mounting table 5 is airtightly attached to an opening formed at the bottom of the processing container 2 with a seal member 26 interposed therebetween.
  • the mounting table 5 is grounded.
  • the mounting table 5 includes a mounting table main body 51, a thermoelectric conversion element 52, and a mounting plate 53.
  • a thermoelectric conversion element 52 is disposed on the mounting table main body 51, and a mounting plate 53 is disposed on the thermoelectric conversion element 52.
  • On the mounting plate 53 the substrate K on which the thin film H to be annealed is formed is mounted.
  • the radiation thermometer 6 includes a radiation thermometer main body 61 and an optical fiber 62 and measures the temperature of the mounting plate 53.
  • the temperature of the mounting plate 53 measured by the radiation thermometer 6 is transmitted to the computer 9.
  • the computer 9 that has received the temperature of the mounting plate 53 converts the temperature of the mounting plate 53 into the temperature of the thin film H in consideration of the temperature gradient between the mounting plate 53 and the thin film H.
  • a through hole 511 is formed in the mounting table main body 51 so as to vertically penetrate from the upper surface to the lower surface, and the optical fiber 62 is inserted in the through hole 511 in an airtight manner.
  • the optical fiber 62 penetrates the lower surface of the mounting table main body 51 from directly below the lower surface of the mounting plate 53 and extends downward, and is connected to a radiation thermometer main body 61 provided outside the processing container 2.
  • the radiation thermometer 6 is configured to be able to measure the temperature of the mounting plate 53 by incorporating the radiation light from the mounting plate 53 into the optical fiber 62.
  • the through-hole which penetrates the side wall of the processing container 2 may be provided, and the radiant light from the direct thin film H inserted airtightly through the through-hole may be taken into the optical fiber. Thereby, the temperature of the thin film H can be directly measured.
  • the thermoelectric conversion element 52 is a plate-like cooling means for cooling the substrate K, and for example, a Peltier element is used.
  • the Peltier element is a plate-like semiconductor element that utilizes the Peltier effect, and generates heat on one side and absorbs heat on the other side when a direct current is applied.
  • heat is absorbed on the upper surface of the thermoelectric conversion element 52 close to the substrate K, and the substrate K is cooled.
  • heat is generated on the lower surface of the thermoelectric conversion element 52.
  • thermoelectric conversion element 52 is electrically connected to the thermoelectric conversion element control unit 7 provided outside the processing container 2 via a lead wire 71.
  • the thermoelectric conversion element control unit 7 controls the direction and magnitude of the current supplied to the thermoelectric conversion element 52 during annealing.
  • the thermoelectric conversion element 52 can also serve as a heating means for heating the substrate K by reversing the direction of the current flowing through the thermoelectric conversion element 52 by the thermoelectric conversion element control unit 7.
  • a coolant channel 512 is formed along a surface substantially parallel to the upper surface of the mounting table main body 51 in the upper portion of the mounting table main body 51 facing the lower surface of the thermoelectric conversion element 52.
  • the refrigerant channel 512 is connected to a refrigerant circulator 515 that supplies a refrigerant via a refrigerant introduction pipe 513 and a refrigerant discharge pipe 514.
  • the refrigerant circulator 515 operates, the refrigerant circulates and circulates through the refrigerant flow path 512 at the time of annealing, and the refrigerant takes heat generated at the lower surface of the thermoelectric conversion element 52. Thereby, the cooling efficiency of the thermoelectric conversion element 52 improves.
  • the cooling means for cooling the substrate K may be only the refrigerant circulation by the refrigerant circulator 515.
  • the cooling means for cooling the substrate K may be a radiator. It is also possible to circulate and circulate a high-temperature heating medium in the refrigerant flow path 512.
  • the mounting plate 53 is manufactured from a material such as silicon oxide, aluminum nitride, silicon carbide, germanium, or silicon.
  • the mounting table 53 may not be provided on the mounting table 5, and the substrate K may be directly mounted on the thermoelectric conversion element 52.
  • the electromagnetic wave supply unit 8 is provided above the top plate 22 of the processing container 2.
  • the electromagnetic wave supply unit 8 includes an electromagnetic wave generation source 81, a waveguide 82, and an incident antenna 83.
  • One end of the waveguide 82 is connected to the electromagnetic wave generation source 81, and the other end of the waveguide 82 is connected to the incident antenna 83.
  • the electromagnetic wave generation source 81 for example, a gyrotron or a magnetron can be used.
  • the gyrotron generally generates electromagnetic waves from millimeter waves to submillimeter waves.
  • a magnetron generates a centimeter wave electromagnetic wave.
  • the electromagnetic wave generation source 81 outputs the generated electromagnetic wave to the waveguide 82.
  • the waveguide 82 is a metal tube that propagates the electromagnetic wave generated by the electromagnetic wave generation source 81 to the incident antenna 83, and has a circular or rectangular cross-sectional shape.
  • the incident antenna 83 is a plate provided on the top surface of the top plate 22 and is, for example, a copper plate or an aluminum plate whose surface is silver-plated.
  • the incident antenna 83 is provided with a plurality of specular reflection lenses and reflection mirrors (not shown), and is configured to reflect and introduce the electromagnetic wave guided from the waveguide 82 toward the processing space of the processing container 2. ing.
  • the incident antenna 83 may be provided on the side surface of the processing container 2.
  • FIG. 2 is a block diagram of the computer 9 according to the first embodiment.
  • the computer 9 includes a control unit 91, a ROM (Read Only Memory) 92, a RAM (Random Access Memory) 93, a communication unit 94, an operation unit 95, a display unit 96, an external interface 97, and a timer 98.
  • ROM Read Only Memory
  • RAM Random Access Memory
  • Various programs are stored in the ROM 92.
  • One of these programs causes the control unit 91 to calculate the most appropriate frequency as the frequency of the electromagnetic wave applied to the thin film H, for example.
  • the control unit 91 reads a program from the ROM 92 and executes various processes. For example, the control unit 91 controls the supply of gas introduced into the processing container 2 by the gas introduction mechanism 3 and the gas flow rate. The control unit 91 controls the electromagnetic wave generated by the electromagnetic wave supply unit 8 and the power supplied to the electromagnetic wave supply unit 8. The control unit 91 controls the annealing temperature based on the signal from the radiation thermometer 6.
  • the RAM 93 temporarily records work variables, measurement data, and the like.
  • the communication unit 94 receives signals or data transmitted from each component of the annealing apparatus 1. In addition, the communication unit 94 transmits a command from the control unit 91 to each component of the annealing apparatus 1.
  • the operation unit 95 includes input devices such as a keyboard and a mouse, and the user operates the computer 9 via the operation unit 95 and the communication unit 94. A user can operate the annealing apparatus 1 via the operation unit 95.
  • the display unit 96 displays data input via the communication unit 94 and the operation unit 95, calculation results executed by the control unit 91, and the like.
  • the external interface 97 is an interface for exchanging information with a portable recording medium 1A such as a USB (Universal Serial Bus) memory or a CD-ROM (Compact Disc-Read Only Memory).
  • a portable recording medium 1A such as a USB (Universal Serial Bus) memory or a CD-ROM (Compact Disc-Read Only Memory).
  • the external interface 97 is also an interface that can be connected to a communication network N such as the Internet.
  • the timer 98 transmits the time count to the control unit 91 as a signal.
  • Various programs for operating the annealing apparatus 1 according to the first embodiment may be recorded in the RAM 93 by causing the external interface 97 to read the portable recording medium 1A.
  • the various programs can also be downloaded from another server computer (not shown) connected via the external interface 97 and a communication network N such as the Internet.
  • the program for calculating the frequency of the electromagnetic wave applied to the thin film H is to calculate the frequency of the electromagnetic wave using the thickness of the thin film H to be annealed as the penetration depth.
  • the penetration depth means that when electromagnetic waves are incident on a conductive homogeneous medium vertically and propagate while exponentially decaying in the medium, the electromagnetic wave intensity is attenuated to 1 / e (about 37%) of the incident intensity. It is the depth of time.
  • the penetration depth is expressed by equation (1).
  • ⁇ is the penetration depth
  • ⁇ is the resistivity
  • ⁇ is the relative permeability
  • f is the frequency of the electromagnetic wave.
  • the substrate K targeted in the first embodiment is, for example, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PC (polycarbonate), or the like.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PC polycarbonate
  • the glass transition points of these plastic substrate materials are 100, 155, and 145 ° C., respectively.
  • a PET substrate is used.
  • the thin film H targeted in the first embodiment is, for example, PEDOT: PSS.
  • the annealing temperature of PEDOT: PSS is about 200 ° C., which is higher than the glass transition point of PET. Therefore, when the PEDOT: PSS thin film H is annealed by a conventional annealing method using a lamp or the like, the PET substrate is deformed.
  • the penetration depth of the PET substrate with respect to electromagnetic waves of centimeter waves, millimeter waves, and submillimeter waves is much deeper than the penetration depth of the thin film H. Therefore, the frequency of the electromagnetic wave that almost passes through the PET substrate and passes through the thin film H of PEDOT: PSS only to the depth of the film thickness is calculated. Specifically, the frequency is calculated by substituting the film thickness into the penetration depth of the equation (1) and the resistivity of the thin film H into the resistivity.
  • the electromagnetic wave having the obtained frequency is a millimeter wave or a submillimeter wave
  • the annealing apparatus 1 in which a gyroton is mounted on the electromagnetic wave generation source 81 is used.
  • the electromagnetic wave having the obtained frequency is a centimeter wave
  • the annealing apparatus 1 having a magnetron mounted on the electromagnetic wave generation source 81 is used.
  • the film thickness of the thin film H and the penetration depth were assumed to be equal.
  • the thickness of the thin film H may be changed as appropriate, such as 90% or 110% of the penetration depth, and the thickness of the thin film H and the penetration depth are not limited to the same.
  • Table 1 is an example of calculating the frequency for two types of PEDOT: PSS films.
  • A is an example when 11247 nm is selected as the film thickness and the resistivity is 5.0 ⁇ 10 ⁇ 3 ⁇ cm, and the frequency is 1.0 ⁇ 10 11 Hz.
  • B is an example in the case where 1125 nm and a resistivity of 5.0 ⁇ 10 ⁇ 3 ⁇ cm are selected as the film thickness, and the frequency is 1.0 ⁇ 10 13 Hz.
  • the thickness and resistivity of the thin film H are substituted into the computer 9 from the operation unit 95.
  • the control unit 91 calculates 100 GHz (gigahertz) as a preferable frequency for measurement. Since 100 GHz corresponds to the frequency of the millimeter wave, the user uses the annealing apparatus 1 in which the gyrotron is mounted on the electromagnetic wave generation source 81 from the approximate frequency calculated in advance.
  • the control unit 91 calculates 10 THz (terahertz) as a preferable frequency for measurement. Since 10 THz corresponds to the frequency of the submillimeter wave, the user uses the annealing apparatus 1 in which the gyrotron is mounted on the electromagnetic wave generation source 81 from the approximate frequency calculated in advance.
  • FIG. 3 is an explanatory diagram showing frequency characteristics of dielectric loss of PEDOT: PSS.
  • the vertical axis represents dielectric loss, and the horizontal axis represents frequency.
  • the absorbed energy of electromagnetic waves is proportional to the dielectric loss that is the product of the relative dielectric constant and the dielectric loss tangent.
  • the maximum value of the dielectric loss is around 100 GHz. Therefore, as in the case of A in Table 1, when the thickness of the PEDOT: PSS thin film is set to 11 ⁇ m, the calculated frequency is 100 GHz, and the most efficient annealing can be performed.
  • the PET substrate is irradiated with an electromagnetic wave of around 100 GHz, it is hardly heated because the penetration depth is deep, and the temperature of the PET substrate does not exceed the glass transition point.
  • the gate valve 24 is opened, and the PET substrate on which the PEDOT: PSS thin film H is formed is placed on the placement plate 53 by a conveying means (not shown).
  • the gate valve 24 is closed and the processing container 2 is sealed.
  • the thickness and resistivity of the thin film H to be annealed are input from the operation unit 95 to the computer 9.
  • the controller 91 calculates the frequency of the electromagnetic wave based on the thickness and resistivity of the thin film H.
  • the control unit 91 sets the frequency of the electromagnetic wave generated by the electromagnetic wave generation source 81 to 100 GHz based on the calculated value.
  • the controller 91 sets the intensity of the electromagnetic wave generated by the electromagnetic wave generation source 81.
  • the controller 91 sets the annealing time and the processing pressure.
  • the control unit 91 exhausts the inside of the processing container 2 by the exhaust mechanism 4 and introduces an inert gas or the like into the processing container 2 from the gas nozzles 31 ⁇ / b> A and 31 ⁇ / b> B of the gas introduction mechanism 3.
  • the control unit 91 starts the annealing process. That is, the control unit 91 generates an electromagnetic wave having a frequency set in the electromagnetic wave generation source 81.
  • the control unit 91 operates the refrigerant circulator 515 to cool the mounting table body 51 and cools the substrate K by the thermoelectric conversion element 52 via the thermoelectric conversion element control unit 7.
  • the controller 91 starts controlling the annealing temperature via the radiation thermometer 6.
  • the annealing temperature is controlled by adjusting the intensity of electromagnetic waves.
  • the electromagnetic wave generated by the electromagnetic wave generation source 81 is guided to the incident antenna 83 through the waveguide 82.
  • the electromagnetic wave guided to the incident antenna 83 is reflected by the incident antenna 83 and supplied into the processing container 2.
  • the electromagnetic wave supplied into the processing container 2 is applied to the thin film H and the substrate K.
  • the controller 91 stops driving the electromagnetic wave generation source 81.
  • the controller 91 stops the control of the annealing temperature.
  • the controller 91 waits for the thin film H to cool down and stops the introduction of the inert gas or the like by the gas introduction mechanism 3.
  • the controller 91 stops the exhaust by the exhaust mechanism 4.
  • the control unit 91 stops supplying current to the thermoelectric conversion element 52 via the thermoelectric conversion element control unit 7.
  • the controller 91 stops the refrigerant circulator 515. That is, the controller 91 stops cooling the substrate K.
  • the gate valve 24 is opened, and the sample on the mounting plate 53 is taken out of the processing container 2 by a conveying means (not shown).
  • the gate valve 24 is closed and the processing container 2 is sealed.
  • the controller 91 receives the film thickness of the thin film H and the resistivity of the thin film H (step S101).
  • the control unit 91 calculates the frequency of the electromagnetic wave applied to the sample from the equation (1) based on the received thickness of the thin film H and the resistivity of the thin film H (step S102).
  • the control unit 91 sets the calculated frequency to the frequency of the electromagnetic wave generated by the electromagnetic wave generation source 81 (step S103).
  • the controller 91 sets the intensity of the electromagnetic wave generated by the electromagnetic wave generation source 81 (step S104).
  • the controller 91 sets an annealing time (step S105).
  • the controller 91 sets a processing pressure (step S106).
  • the control unit 91 exhausts the inside of the processing container 2 (step S107).
  • the controller 91 introduces an inert gas or the like from the gas nozzles 31A and 31B into the processing container 2 (step S108).
  • the controller 91 causes the electromagnetic wave generation source 81 to generate an electromagnetic wave (step S109).
  • the control unit 91 operates the refrigerant circulator 515 to cool the mounting table main body 51 and starts cooling the substrate K by the thermoelectric conversion element 52 via the thermoelectric conversion element control unit 7 (step S110).
  • the controller 91 starts controlling the annealing temperature (step S111).
  • the control unit 91 determines whether the annealing time has elapsed based on the timer 98 (step S112). When it is determined that the annealing time has not elapsed (step S112: NO), the controller 91 returns the control to step S112. When the controller 91 determines that the annealing time has elapsed (step S112: YES), the controller 91 stops the generation of electromagnetic waves by the electromagnetic wave generation source 81 (step S113). The controller 91 stops the control of the annealing temperature (step S114). The controller 91 stops the introduction of an inert gas or the like by the gas introduction mechanism 3 (Step S115). The controller 91 stops the exhaust by the exhaust mechanism 4 (step S116). The controller 91 stops the cooling of the substrate K (step S117) and ends the process.
  • step S101 the control unit 91 receives the resistivity of the thin film H.
  • the resistivity of various materials may be recorded in the ROM 92 in advance, and the control unit 91 may read the resistivity of the thin film H from the ROM 92.
  • the control unit 91 receives the material of the thin film H in step S101, and reads the resistivity of the thin film H from the ROM 92 based on the received material of the thin film H.
  • step S102 the control unit 91 calculates the frequency of the electromagnetic wave applied to the sample from Equation (1) based on the received film thickness of the thin film H and the resistivity of the thin film H.
  • the user may calculate the frequency of the electromagnetic wave applied to the sample from Equation (1) based on the film thickness of the thin film H and the resistivity of the thin film H, and the control unit 91 may receive the frequency input from the user.
  • the processing of the control unit 91 in step S101 and step S102 is processing for receiving a frequency.
  • step S103 the control unit 91 sets the received frequency to the frequency of the electromagnetic wave generated by the electromagnetic wave generation source 81.
  • Table 2 is an example in which the penetration depth was estimated for the inorganic conductive material and the semiconductor material.
  • the silver of C is an example when a film thickness of 1948 nm and a resistivity of 1.5 ⁇ 10 ⁇ 6 ⁇ cm is selected, and the frequency is 1.0 ⁇ 10 9 Hz.
  • Silver of D is an example in which a film thickness of 195 nm and a resistivity of 1.5 ⁇ 10 ⁇ 6 ⁇ cm are selected, and the frequency is 1.0 ⁇ 10 11 Hz.
  • the copper E is an example in which a film thickness of 2012 nm and a resistivity of 1.6 ⁇ 10 ⁇ 6 ⁇ cm is selected, and the frequency is 1.0 ⁇ 10 9 Hz.
  • the copper of F is an example when the film thickness is 201 nm and the resistivity is 1.6 ⁇ 10 ⁇ 6 ⁇ cm, and the frequency is 1.0 ⁇ 10 11 Hz.
  • the aluminum of G is an example in which a film thickness of 2515 nm and a resistivity of 2.5 ⁇ 10 ⁇ 6 ⁇ cm are selected, and the frequency is 1.0 ⁇ 10 9 Hz.
  • the aluminum of H is an example when the film thickness is 252 nm and the resistivity is 2.5 ⁇ 10 ⁇ 6 ⁇ cm, and the frequency is 1.0 ⁇ 10 11 Hz.
  • the silicon of J is an example when the film thickness is 5030 nm and the resistivity is 1.0 ⁇ 10 ⁇ 1 ⁇ cm, and the frequency is 1.0 ⁇ 10 13 Hz.
  • the annealing apparatus 1 equipped with a magnetron that irradiates the electromagnetic wave generation source 81 with a centimeter wave electromagnetic wave is used.
  • the annealing apparatus 1 equipped with a gyrotron that irradiates the electromagnetic wave generation source 81 with millimeter wave and submillimeter wave electromagnetic waves is used.
  • the electromagnetic wave of the frequency shown in Table 2 is selected, and it anneals.
  • the thin film H can be selectively heated without making the temperature of the substrate K higher than the glass transition point.
  • the thin film H can be selectively heated at a higher temperature among the substrate K and the thin film H.
  • the substrate K is almost heated.
  • the thin film H can be selectively heated.
  • Many inexpensive organic material substrates have a glass transition point below the annealing temperature of the organic conductive film material. Therefore, according to the annealing apparatus 1 according to the first embodiment, the thin film H of the organic conductive film material can be annealed without causing deformation of the organic material substrate, and the manufacturing cost of the organic device can be reduced. it can.
  • thermoelectric conversion element 52 and refrigerant circulator 515 temperature increase of substrate K can be suppressed by thermoelectric conversion element 52 and refrigerant circulator 515. Even when electromagnetic waves are hardly absorbed by the substrate K, as the annealing time is prolonged, heat flows from the thin film H to the substrate K, and the temperature of the substrate K increases. However, by cooling the substrate K by the thermoelectric conversion element 52 and the refrigerant circulator 515, the transient state of thermal equilibrium can be prolonged. Film characteristics such as electrical conductivity are improved as the annealing temperature is higher and the annealing time is longer. Therefore, the cooling of the substrate K contributes to the improvement of the film characteristics.
  • Embodiment 2 relates to a thin film substrate manufacturing system in which a film forming apparatus, an annealing apparatus, and a physical property measuring apparatus are incorporated in a roll-to-roll manufacturing line for forming a thin film H on a flexible substrate K.
  • substrate K made into object in Embodiment 2 is a film-like PET board
  • the target thin film H in the second embodiment is a thin film H such as PEDOT: PSS, silylethyne-substituted pentacene, or poly (3-alkylthiophene).
  • FIG. 6 is a block diagram of the thin film substrate manufacturing system 100 according to the second embodiment.
  • the thin film substrate manufacturing system 100 includes a substrate transfer unit 11, a film forming device 12, an annealing device 10, a physical property measuring device 13, and a computer 90.
  • the film forming apparatus 12, the annealing apparatus 10 and the physical property measuring apparatus 13 are arranged in this order from the upstream to the downstream of the transfer line by the substrate transfer unit 11.
  • the substrate transfer unit 11 includes an unwinding roll 111, a take-up roll 112, and transfer rolls 113 and 114 that transfer the substrate K.
  • the substrate transfer unit 11 unwinds the substrate K wound on the unwinding roll 111 at an appropriate tension and speed, and winds the thin film substrate formed by the film forming apparatus 12 and the annealing apparatus 10 on the winding roll 112.
  • the transfer rolls 113 and 114 transfer the substrate K from upstream to downstream by rotational driving.
  • the operation of the substrate transfer unit 11 is continuous or discontinuous.
  • the substrate transfer unit 11 may not include the unwinding roll 111 and the winding roll 112. In such a case, a rotation driving unit that rotates the unwinding roll 111 and the winding roll 112 is separately prepared.
  • the substrate transfer unit 11 may include a plurality of pressing rolls that sandwich the substrate K between the transfer rolls 113 and 114 in order to improve the transfer efficiency of the substrate K.
  • the substrate transfer unit 11 holds the width direction of the substrate K in the horizontal direction and transfers the substrate K in the horizontal direction.
  • the substrate transfer unit 11 may transfer the substrate K in the vertical direction while holding the width direction of the substrate K in the vertical direction.
  • the film forming apparatus 12 is a pattern forming apparatus that forms a film pattern on the surface of the substrate K by printing, for example.
  • the target of pattern formation by printing includes source / drain printing, semiconductor printing, gate printing, and the like.
  • the film forming apparatus 12 may be a CVD apparatus, a PVD apparatus, or the like that deposits a material on a substrate K from a gas.
  • Annealing apparatus 10 is different from annealing apparatus 1 according to the first embodiment in that it corresponds to a roll-to-roll system.
  • FIG. 7 is a block diagram of annealing apparatus 10 according to the second embodiment. Here, parts of annealing apparatus 10 that are different from annealing apparatus 1 according to the first embodiment will be described.
  • the annealing apparatus 10 does not include the opening 23 and the gate valve 24.
  • a carry-in port 27 for carrying in the substrate K and the thin film H before annealing and a carry-out port 28 for carrying out the substrate K and the thin film H after annealing are opened.
  • the carry-in port 27 and the carry-out port 28 each have a slit shape longer than the width of the substrate K, and are provided at substantially the same height.
  • Shutters 27A and 28A are provided at the carry-in port 27 and the carry-out port 28, respectively.
  • the shutters 27 ⁇ / b> A and 28 ⁇ / b> A shield the electromagnetic wave and gas inside the processing container 2 from leaking outside when the substrate transfer unit 11 stops transferring the substrate K and the substrate K and the thin film H are irradiated with electromagnetic waves.
  • the shutters 27A and 28A are each made of a soft metal, such as indium or copper, and press the substrate K when the substrate transfer unit 11 stops the transfer of the substrate K.
  • the physical property measuring device 13 includes a terahertz spectroscopic device, a film thickness measuring device, and an infrared spectroscopic device.
  • the terahertz spectrometer measures the transmittance or reflectance of the terahertz wave with respect to the thin film H.
  • the film thickness measuring device measures the thickness of the thin film H and transmits the measured thickness of the thin film H to the terahertz spectrometer.
  • the terahertz spectrometer receives the thickness of the thin film H from the film thickness measuring device.
  • the infrared spectrometer measures the reflectance of the infrared region with respect to the thin film H, and transmits the measured reflectance of the infrared region to the terahertz spectrometer.
  • the terahertz spectrometer receives the infrared reflectance of the thin film H from the infrared spectrometer.
  • the terahertz spectrometer is based on the transmittance or reflectance of the terahertz wave, the thickness of the thin film H, the reflectance in the infrared region, and the like, such as the complex refractive index, complex dielectric constant, complex electrical conductivity, carrier mobility, etc. Calculate physical properties.
  • the physical property measuring device 13 or the terahertz spectrometer transmits the calculated physical property value of the thin film H to the computer 90.
  • FIG. 8 is a block diagram of a computer 90 according to the second embodiment.
  • the configuration of the computer 90 is the same as the configuration of the computer 9 included in the annealing apparatus 1 according to the first embodiment. Note that the computer 90 may be substituted by the computer 9 included in the annealing apparatus 10.
  • the computer 90 is electrically connected to the substrate transfer unit 11, the film forming apparatus 12, the annealing apparatus 10, and the physical property measuring apparatus 13, and controls these apparatuses.
  • the frequency of the electromagnetic wave generated by the electromagnetic wave generation source 81 of the annealing apparatus 10 is set in the computer 90 in advance.
  • the resistivity and film thickness of the thin film H are input to the computer 90 from the operation unit 950.
  • the control unit 910 of the computer 90 transmits the acquired resistivity and film thickness of the thin film H to the computer 9 of the annealing apparatus 10.
  • the computer 9 receives the resistivity and film thickness of the thin film H, and calculates the frequency of electromagnetic waves suitable for annealing.
  • the computer 90 sets the calculated frequency to the frequency of the electromagnetic wave generated by the electromagnetic wave generation source 81.
  • the substrate K roll is attached to the unwinding roll 111, and the operation of the thin film substrate manufacturing system 100 is started.
  • FIG. 9 is a flowchart illustrating a procedure of processing executed by the control unit 910 of the computer 90 according to the second embodiment.
  • the control unit 910 starts the operations of the substrate transfer unit 11, the film forming apparatus 12, the annealing apparatus 10, and the physical property measuring apparatus 13 (Step S201).
  • the specific contents are as follows.
  • the control unit 910 operates the substrate transfer unit 11 to unwind the substrate K to the roll-to-roll production line.
  • the control unit 910 operates the film forming apparatus 12 to print a pattern on the surface of the substrate K.
  • the controller 910 causes the annealing apparatus 10 to anneal the thin film H formed by the film forming apparatus 12 via the computer 9.
  • the control unit 910 causes the physical property measuring device 13 to measure the physical properties of the thin film H annealed by the annealing device 10.
  • the controller 910 causes the manufactured thin film substrate to be taken up by the take-up roll 112.
  • the physical property measuring device 13 transmits the measured physical property value to the computer 90.
  • the control unit 910 acquires the physical property value of the thin film H from the physical property measuring device 13 (step S202).
  • the control unit 910 determines whether the physical property value of the thin film H is within the range of the manufacturing standard (step S203).
  • the control unit 910 determines that the physical property value of the thin film H is within the range of the manufacturing standard (step S203: YES)
  • the control unit 910 returns the control to step S201.
  • the control unit 910 determines that the physical property value of the thin film H is not within the range of the manufacturing standard (step S203: NO)
  • the operation of the substrate transfer unit 11, the film forming apparatus 12, the annealing apparatus 10, and the physical property measuring apparatus 13 is performed.
  • step S204 The control unit 910 executes the above steps continuously in multitasking.
  • the control unit 910 executes the above steps continuously in multitasking.
  • the user removes the non-manufacturing thin film substrate from the winding roll 112.
  • the control unit 910 waits for an instruction from the user.
  • the user instructs the computer 90 whether or not to resume manufacturing the thin film substrate.
  • the control unit 910 receives an instruction from the user, and determines whether or not to resume the operations of the substrate transfer unit 11, the film forming apparatus 12, the annealing apparatus 10, and the physical property measuring apparatus 13 (step S205).
  • the control unit 910 causes the film forming apparatus 12 to change the film forming conditions or causes the annealing apparatus 10 to change the annealing conditions (step S206), and performs processing in step S201.
  • the change of the film forming conditions here is to change pattern forming conditions such as resist conditions and printing speed, for example.
  • the change of the annealing conditions here is, for example, to set the intensity of the electromagnetic wave to a value that is larger by a predetermined value.
  • the annealing condition is changed by changing the annealing time.
  • the thin film substrate can be continuously manufactured by the roll-to-roll method.
  • the production line can be stopped when the quality of the thin film substrate being produced is out of the production standard. Thereby, the yield can be improved.
  • the manufacturing conditions of the thin film substrate are optimized in a short time, and then the manufacturing is resumed. Can do. Optimizing the manufacturing conditions of the thin film substrate is, for example, changing the intensity of electromagnetic waves. Since the thin film substrate manufacturing system 100 according to the second embodiment has such a feedback function, the production efficiency of the thin film substrate can be improved.
  • the second embodiment is as described above, and the other parts are the same as those of the first embodiment. Therefore, the corresponding parts are denoted by the same reference numerals, and detailed description thereof is omitted.
  • Embodiment 3 relates to a mode in which the annealing apparatus 10 of the thin film substrate manufacturing system 100 according to the second embodiment is replaced with another annealing apparatus.
  • FIG. 10 is a block diagram of annealing apparatus 20 according to the third embodiment.
  • the annealing apparatus 20 according to the third embodiment does not include the mounting table 5 of the annealing apparatus 10 according to the second embodiment, but includes a mounting roll 50 instead. Further, the annealing apparatus 20 according to the third embodiment is different from the annealing apparatus 10 according to the second embodiment in that the optical fiber 62 of the radiation thermometer 6 receives radiation light from the substrate K.
  • the mounting roll 50 has a cylindrical shape or an elliptical column shape, and is attached so as to be partially inserted into an opening formed in the bottom of the processing container 2.
  • the mounting roll 50 is grounded in a manner not shown.
  • the mounting roll 50 is configured to rotate around an axis, and has a function of transferring the substrate K in contact with the side surface and a function of cooling the substrate K.
  • a shutter (not shown) is configured to close the gap between the mounting roll 50 and the bottom of the processing container 2. Has been.
  • the shutter is made of a soft metal such as indium or copper, and when the substrate transfer unit 11 stops transferring the substrate K, it presses a part of the mounting roll 50 and a part of the bottom of the processing container 2. The shutter opens a gap between the placement roll 50 and the bottom of the processing container 2 when the substrate transfer unit 11 resumes the transfer of the substrate K.
  • the mounting roll 50 includes a mounting roll body 510, a thermoelectric conversion element 520, and a mounting roll plate 530.
  • a plurality of thermoelectric conversion elements 520 are disposed on the outer surface of the columnar mounting roll body 510, and a cylindrical mounting roll plate 530 is disposed on the outer surface of the thermoelectric conversion element 520.
  • the substrate K is placed at the uppermost position of the placement roll plate 530.
  • a coolant channel 512 is formed along the cylindrical surface substantially parallel to the outer surface of the mounting table main body 510 at the edge of the mounting table main body 510 facing the inner surface of the thermoelectric conversion element 520.
  • the refrigerant channel 512 is connected to a refrigerant circulator 515 that supplies a refrigerant via a refrigerant introduction pipe 513 and a refrigerant discharge pipe 514.
  • the refrigerant circulator 515 By operating the refrigerant circulator 515, the refrigerant circulates through the refrigerant flow path 512 during annealing, and the refrigerant takes away heat generated on the inner surface of the thermoelectric conversion element 520. Thereby, the cooling efficiency of the thermoelectric conversion element 520 improves. Note that it is also possible to circulate and circulate the heating medium through the refrigerant flow path 512.
  • the mounting roll plate 530 is made of a material such as silicon oxide, aluminum nitride, silicon carbide, germanium, or silicon.
  • the mounting roll plate 530 may not be provided on the mounting roll 50, and the substrate K may be directly mounted on the outer surface of the thermoelectric conversion element 520.
  • a through hole 29 is formed at the bottom of the processing container 2, and an optical fiber 62 is inserted into the through hole 29 in an airtight manner.
  • the optical fiber 62 penetrates the bottom through the through hole 29, and one end thereof is connected to the radiation thermometer main body 61.
  • the other end of the optical fiber 62 extends upward to just below the substrate K, and takes in the radiated light from the substrate K.
  • the radiation thermometer 6 of the annealing apparatus 20 measures the temperature of the substrate K.
  • the temperature of the substrate K measured by the radiation thermometer 6 is transmitted as a signal to the computer 9 of the annealing apparatus 20.
  • the computer 9 receives the signal from the radiation thermometer 6 and converts the temperature of the substrate K into the temperature of the thin film H.
  • the mounting roll 50 since the mounting roll 50 has a roll shape and rotates to transfer the substrate K, the substrate K can be smoothly moved corresponding to the roll-to-roll method. It is. Thereby, the thin film substrate manufacturing system 100 can efficiently and continuously produce thin film substrates. Since the mounting roll 50 includes the thermoelectric conversion element 520 that cools the substrate K and the coolant channel 512, the mounting roll 50 contributes to selective heating of the thin film H by cooling the substrate K.
  • the third embodiment is as described above, and the other parts are the same as those in the first or second embodiment. Therefore, the corresponding parts are denoted by the same reference numerals, and detailed description thereof is omitted.

Abstract

Disclosed is an annealing device (1) that uses electromagnetic radiation to irradiate a substrate (K) and a thin film (H) formed on the surface of the substrate (K), thereby causing heating and annealing the thin film (H). Said annealing device is provided with: a computation means that uses the thickness and resistivity of the thin film (H), which are given, to compute the frequency of the electromagnetic radiation with which to irradiate the substrate (K) and the thin film (H); and an electromagnetic radiation supply means that irradiates the substrate (K) and the thin film (H) with electromagnetic radiation at the frequency computed by the computation means.

Description

アニール装置、アニール方法及び薄膜基板製造システムAnnealing apparatus, annealing method, and thin film substrate manufacturing system
　本発明は、基板表面の薄膜をアニールするアニール装置、アニール方法及び薄膜基板製造システムに関する。 The present invention relates to an annealing apparatus, an annealing method, and a thin film substrate manufacturing system for annealing a thin film on a substrate surface.
　基板上に薄膜を形成した後、電気伝導度等の膜特性向上のために、薄膜はアニールされる。例えば、特許文献１には、メンテナンス性を低下させずに効率的に発光素子を冷却することができるアニール装置が開示されている。 After forming a thin film on the substrate, the thin film is annealed to improve film properties such as electrical conductivity. For example, Patent Document 1 discloses an annealing apparatus that can efficiently cool a light emitting element without degrading maintainability.
特開２００９－２９５９５３号公報JP 2009-295953 A
　ところで、基板材料によっては、基板のガラス転移点が薄膜のアニール温度よりも低い場合があり、かかる場合基板に変形が生じ、薄膜が基板から剥離してしまうことがある。そのため、基板材料は薄膜のアニール温度よりも高いガラス転移点を有するものに限定される。 By the way, depending on the substrate material, the glass transition point of the substrate may be lower than the annealing temperature of the thin film. In such a case, the substrate may be deformed and the thin film may be peeled off from the substrate. Therefore, the substrate material is limited to those having a glass transition point higher than the annealing temperature of the thin film.
　本発明は、斯かる事情に鑑みてなされたものであって、その目的とするところは、基板及び基板表面に形成された薄膜のうち、薄膜をより高温に加熱することができるアニール装置、アニール方法及び薄膜基板製造システムを提供することにある。 The present invention has been made in view of such circumstances, and an object of the present invention is to provide an annealing apparatus and an annealing apparatus capable of heating the thin film to a higher temperature among the thin film formed on the substrate and the substrate surface. A method and a thin film substrate manufacturing system are provided.
　本願に係るアニール装置は、基板及び該基板表面に形成された薄膜に電磁波を照射して加熱し、該薄膜をアニールするアニール装置において、所与の前記薄膜の膜厚及び抵抗率に基づいて、前記基板及び薄膜に照射する電磁波の周波数を算出する算出手段と、該算出手段が算出した周波数の電磁波を前記基板及び薄膜に照射する電磁波供給手段とを備えることを特徴とする。 In the annealing apparatus according to the present application, the substrate and the thin film formed on the surface of the substrate are irradiated with electromagnetic waves and heated, and in the annealing apparatus for annealing the thin film, based on the film thickness and resistivity of the given thin film, It is characterized by comprising calculation means for calculating the frequency of the electromagnetic wave applied to the substrate and the thin film, and electromagnetic wave supply means for applying the electromagnetic wave having the frequency calculated by the calculation means to the substrate and the thin film.
　本願に係るアニール装置は、前記算出手段は、前記薄膜に対する電磁波の浸透深さが該薄膜の膜厚に対応するように、電磁波の周波数を算出するようにしてあることを特徴とする。 The annealing apparatus according to the present application is characterized in that the calculation means calculates the frequency of the electromagnetic wave so that the penetration depth of the electromagnetic wave into the thin film corresponds to the film thickness of the thin film.
　本願に係るアニール装置は、前記電磁波供給手段は、前記基板よりも薄膜をより高温に加熱するようにしてあることを特徴とする。 The annealing apparatus according to the present application is characterized in that the electromagnetic wave supply means heats the thin film to a higher temperature than the substrate.
　本願に係るアニール装置は、前記基板を冷却する冷却手段を備えることを特徴とする。 The annealing apparatus according to the present application includes a cooling means for cooling the substrate.
　本願に係るアニール方法は、基板及び該基板表面に形成された薄膜に電磁波を照射して加熱し、該薄膜をアニールするアニール方法において、前記薄膜の膜厚及び抵抗率に基づいて、前記基板及び薄膜に照射する電磁波の周波数を算出し、算出した周波数の電磁波を用いて、前記基板よりも薄膜をより高温に加熱することを特徴とする。 In the annealing method according to the present application, in the annealing method in which the substrate and the thin film formed on the substrate surface are irradiated with electromagnetic waves and heated, and the thin film is annealed, the substrate and the thin film formed on the basis of the thickness and resistivity of the thin film The frequency of the electromagnetic wave irradiated to the thin film is calculated, and the thin film is heated to a higher temperature than the substrate using the electromagnetic wave having the calculated frequency.
　本願に係るアニール方法は、前記基板は有機材料からなることを特徴とする。 The annealing method according to the present application is characterized in that the substrate is made of an organic material.
　本願に係るアニール方法は、前記基板を冷却することを特徴とする。 The annealing method according to the present application is characterized in that the substrate is cooled.
　本願に係る薄膜基板製造システムは、巻き出しロールに巻かれた可撓性を有する基板を巻き出し、巻き取りロールに巻き取る移送の過程で、該基板表面に薄膜を形成する成膜装置を設けた薄膜基板製造システムにおいて、前記成膜装置が形成した薄膜を任意のアニール条件でアニールする前述のアニール装置と、該アニール装置がアニールした薄膜の物性を測定する物性測定装置とを含むことを特徴とする。 The thin film substrate manufacturing system according to the present application is provided with a film forming apparatus for forming a thin film on the surface of the substrate in the process of unwinding the flexible substrate wound around the unwinding roll and winding it on the winding roll. The thin film substrate manufacturing system includes the above-described annealing apparatus that anneals the thin film formed by the film forming apparatus under arbitrary annealing conditions, and the physical property measuring apparatus that measures the physical properties of the thin film annealed by the annealing apparatus. And
　本願に係る薄膜基板製造システムは、前記物性測定装置から信号を受信し、前記成膜装置の動作を制御する制御装置を含み、前記成膜装置、アニール装置及び物性測定装置は、前記巻き出しロール及び巻き取りロールの間の移送路に沿って配置され、前記物性測定装置は、所定の信号を前記制御装置に送信する送信手段を有し、前記制御装置は、前記物性測定装置の送信手段が送信した前記所定の信号を受信した場合、前記成膜装置の動作を停止する手段を有することを特徴とする。 The thin film substrate manufacturing system according to the present application includes a control device that receives a signal from the physical property measuring device and controls the operation of the film forming device, and the film forming device, the annealing device, and the physical property measuring device include the unwinding roll. And the physical property measuring device includes a transmission unit that transmits a predetermined signal to the control device, and the control device includes a transmission unit of the physical property measurement device. It has a means for stopping the operation of the film forming apparatus when the transmitted predetermined signal is received.
　本願に係る薄膜基板製造システムは、前記制御装置は、前記アニール装置のアニール条件を設定するようにしてあり、前記物性測定装置の送信手段が送信した前記所定の信号を受信した場合、前記アニール装置のアニール条件を変更する手段を有することを特徴とする。 In the thin film substrate manufacturing system according to the present application, the control device sets an annealing condition of the annealing device, and when the predetermined signal transmitted by the transmission unit of the physical property measuring device is received, the annealing device Means for changing the annealing conditions.
　本願に係る薄膜基板製造システムは、任意の移送速度で、前記基板を巻き出しロールから巻き出して移送し、該基板表面に薄膜が形成された薄膜基板を巻き取りロールに巻き取る基板移送手段を含み、前記制御装置は、前記基板移送手段の移送速度を制御するようにしてあり、前記物性測定装置の送信手段が送信した前記所定の信号を受信した場合、前記基板移送手段の移送速度を変更する手段を有することを特徴とする。 The thin film substrate manufacturing system according to the present application includes substrate transfer means for unwinding and transferring the substrate from an unwinding roll at an arbitrary transfer speed, and winding the thin film substrate having a thin film formed on the substrate surface on a winding roll. And the control device controls the transfer speed of the substrate transfer means, and changes the transfer speed of the substrate transfer means when receiving the predetermined signal transmitted by the transmission means of the physical property measuring apparatus. It has the means to do.
　本願に係るアニール装置にあっては、算出手段は与えられた薄膜の膜厚及び薄膜の抵抗率に基づいて、基板及び基板表面に形成された薄膜に照射する電磁波の周波数を算出する。電磁波供給手段は、算出した周波数の電磁波を基板及び薄膜に照射する。 In the annealing apparatus according to the present application, the calculating means calculates the frequency of the electromagnetic wave applied to the substrate and the thin film formed on the surface of the substrate based on the given thin film thickness and thin film resistivity. The electromagnetic wave supply means irradiates the substrate and the thin film with electromagnetic waves having the calculated frequency.
　本願に係るアニール装置にあっては、算出手段は基板表面に形成された薄膜に対する電磁波の浸透深さが薄膜の膜厚に対応するように、薄膜の膜厚及び薄膜の抵抗率に基づいて、電磁波の周波数を算出する。 In the annealing apparatus according to the present application, the calculation means is based on the film thickness of the thin film and the resistivity of the thin film so that the penetration depth of the electromagnetic wave with respect to the thin film formed on the substrate surface corresponds to the film thickness of the thin film. Calculate the frequency of the electromagnetic wave.
　本願に係るアニール装置にあっては、電磁波供給手段は、算出した周波数の電磁波を基板及び薄膜に照射し、基板よりも薄膜をより高温に加熱する。 In the annealing apparatus according to the present application, the electromagnetic wave supply means irradiates the substrate and the thin film with electromagnetic waves of the calculated frequency, and heats the thin film to a higher temperature than the substrate.
　本願に係るアニール装置にあっては、冷却手段は基板を冷却する。 In the annealing apparatus according to the present application, the cooling means cools the substrate.
　本願に係るアニール方法にあっては、基板表面に形成された薄膜の膜厚及び抵抗率に基づいて、基板及び薄膜に照射する電磁波の周波数を算出する。算出した周波数の電磁波を基板及び薄膜に照射して、基板よりも薄膜をより高温に加熱する。 In the annealing method according to the present application, the frequency of electromagnetic waves applied to the substrate and the thin film is calculated based on the film thickness and resistivity of the thin film formed on the substrate surface. The substrate and the thin film are irradiated with an electromagnetic wave having the calculated frequency, and the thin film is heated to a higher temperature than the substrate.
　本願に係るアニール方法にあっては、電磁波が照射される基板は有機材料からなる。 In the annealing method according to the present application, the substrate irradiated with electromagnetic waves is made of an organic material.
　本願に係るアニール方法にあっては、基板を冷却しながら、基板及び薄膜に電磁波を照射する。 In the annealing method according to the present application, the substrate and the thin film are irradiated with electromagnetic waves while the substrate is cooled.
　本願に係る薄膜基板製造システムにあっては、成膜装置、アニール装置及び物性測定装置を含む。成膜装置は可撓性を有する基板表面に薄膜を形成する。アニール装置は、成膜装置が形成した薄膜を任意のアニール条件でアニールする前述のアニール装置である。物性測定装置は、アニール装置がアニールした薄膜の物性を測定する。 The thin film substrate manufacturing system according to the present application includes a film forming apparatus, an annealing apparatus, and a physical property measuring apparatus. The film forming apparatus forms a thin film on a flexible substrate surface. The annealing apparatus is the above-described annealing apparatus that anneals the thin film formed by the film forming apparatus under an arbitrary annealing condition. The physical property measuring device measures the physical properties of the thin film annealed by the annealing device.
　本願に係る薄膜基板製造システムにあっては、物性測定装置から信号を受信し、成膜装置の動作を制御する制御装置を含む。成膜装置、アニール装置及び物性測定装置は、巻き出しロールと巻き取りロールとの間の移送路に沿って配置される。物性測定装置は、所定の信号を制御装置へ送信する。制御装置は、物性測定装置が送信した所定の信号を受信した場合、成膜装置の動作を停止する。 The thin film substrate manufacturing system according to the present application includes a control device that receives a signal from the physical property measuring device and controls the operation of the film forming device. The film forming apparatus, the annealing apparatus, and the physical property measuring apparatus are arranged along a transfer path between the unwinding roll and the winding roll. The physical property measuring device transmits a predetermined signal to the control device. The control device stops the operation of the film forming device when receiving a predetermined signal transmitted from the physical property measuring device.
　本願に係る薄膜基板製造システムにあっては、制御装置は、アニール装置のアニール条件を設定する。制御装置は、物性測定装置が送信した所定の信号を受信した場合、アニール装置のアニール条件を変更する。 In the thin film substrate manufacturing system according to the present application, the control device sets the annealing conditions of the annealing device. The control device changes the annealing condition of the annealing device when receiving a predetermined signal transmitted from the physical property measuring device.
　本願に係る薄膜基板製造システムにあっては、基板を移送する基板移送手段を含む。基板移送手段の移送速度を制御する制御装置は、物性測定装置が送信した所定の信号を受信した場合、基板移送手段の移送速度を変更する。 The thin film substrate manufacturing system according to the present application includes substrate transfer means for transferring the substrate. The control device for controlling the transfer speed of the substrate transfer means changes the transfer speed of the substrate transfer means when receiving a predetermined signal transmitted from the physical property measuring apparatus.
　本発明によれば、基板及び基板表面に形成された薄膜のうち、薄膜をより高温に加熱することができる。 According to the present invention, among the thin films formed on the substrate and the substrate surface, the thin film can be heated to a higher temperature.
実施の形態１に係るアニール装置のブロック図である。1 is a block diagram of an annealing apparatus according to a first embodiment. 実施の形態１に係るコンピュータのブロック図である。1 is a block diagram of a computer according to Embodiment 1. FIG. ＰＥＤＯＴ：ＰＳＳの誘電損の周波数特性を示す説明図である。It is explanatory drawing which shows the frequency characteristic of the dielectric loss of PEDOT: PSS. 実施の形態１に係るアニール装置のアニール処理の手順を示すフローチャートである。3 is a flowchart showing a procedure of annealing treatment of the annealing apparatus according to the first embodiment. 実施の形態１に係るアニール装置のアニール処理の手順を示すフローチャートである。3 is a flowchart showing a procedure of annealing treatment of the annealing apparatus according to the first embodiment. 実施の形態２に係る薄膜基板製造システムのブロック図である。6 is a block diagram of a thin film substrate manufacturing system according to Embodiment 2. FIG. 実施の形態２に係るアニール装置のブロック図である。FIG. 6 is a block diagram of an annealing apparatus according to a second embodiment. 実施の形態２に係るコンピュータのブロック図である。FIG. 6 is a block diagram of a computer according to a second embodiment. 実施の形態２に係るコンピュータの制御部が実行する処理の手順を示すフローチャートである。10 is a flowchart illustrating a procedure of processing executed by a control unit of a computer according to Embodiment 2. 実施の形態３に係るアニール装置のブロック図である。FIG. 6 is a block diagram of an annealing apparatus according to a third embodiment.
　以下、本発明をその実施の形態を示す図面を参照して具体的に説明する。なお、本発明は、以下の実施の形態に限定されるものではない。 Hereinafter, the present invention will be described in detail with reference to the drawings showing embodiments thereof. Note that the present invention is not limited to the following embodiments.
　実施の形態１
　実施の形態１は、基板表面に形成された薄膜を電磁波の誘導加熱によりアニールするアニール装置に関する。試料に照射する電磁波の周波数として、基板表面の薄膜を選択的に加熱する周波数を算出する。そして、算出した周波数の電磁波を用いて、薄膜のアニールが行われる。 Embodiment 1
The first embodiment relates to an annealing apparatus that anneals a thin film formed on a substrate surface by induction heating of electromagnetic waves. The frequency for selectively heating the thin film on the substrate surface is calculated as the frequency of the electromagnetic wave applied to the sample. Then, the thin film is annealed using the electromagnetic wave having the calculated frequency.
　図１は、実施の形態１に係るアニール装置１のブロック図である。実施の形態１に係るアニール装置１は、処理容器２、ガス導入機構３、排気機構４、載置台５、放射温度計６、熱電変換素子制御部７、電磁波供給部８及びコンピュータ９を含む。なお、アニール装置１は、コンピュータ９を外付けにすることにより、コンピュータ９を含まなくてもよい。 FIG. 1 is a block diagram of an annealing apparatus 1 according to the first embodiment. An annealing apparatus 1 according to Embodiment 1 includes a processing container 2, a gas introduction mechanism 3, an exhaust mechanism 4, a mounting table 5, a radiation thermometer 6, a thermoelectric conversion element control unit 7, an electromagnetic wave supply unit 8, and a computer 9. The annealing apparatus 1 may not include the computer 9 by externally attaching the computer 9.
　処理容器２は、例えばアルミニウムにより直方体状に形成されており、接地されている。処理容器２の天井部は開口されており、この開口部にはシール部材２１を介して、天板２２が気密に設けられている。天板２２の材料は、例えば石英、窒化アルミニウム等である。
　なお、処理容器２の形状は、上部が開口された直方体状に限らず、円柱状又は箱状であってもよい。 The processing container 2 is formed in a rectangular parallelepiped shape with aluminum, for example, and is grounded. A ceiling portion of the processing container 2 is opened, and a top plate 22 is airtightly provided in the opening portion via a seal member 21. The material of the top plate 22 is, for example, quartz, aluminum nitride or the like.
In addition, the shape of the processing container 2 is not limited to a rectangular parallelepiped shape whose upper portion is opened, and may be a columnar shape or a box shape.
　処理容器２の側壁には、開口２３が設けられると共に、試料Ｓの基板Ｋ及び薄膜Ｈを処理容器２内部に搬入出する際に開口２３を開閉するゲートバルブ２４が設けられている。
　処理容器２底部の周縁部には、排気機構４と接続される排気口２５が設けられている。 An opening 23 is provided on the side wall of the processing container 2, and a gate valve 24 that opens and closes the opening 23 when the substrate K and the thin film H of the sample S are carried into and out of the processing container 2 is provided.
An exhaust port 25 connected to the exhaust mechanism 4 is provided at the peripheral edge of the bottom of the processing container 2.
　ガス導入機構３は、処理容器２の側壁を貫通する２本のガスノズル３１Ａ、３１Ｂからなり、図示しないガス供給源から処理に必要なガスを処理容器２に供給する。ここでのガスは、例えばアルゴン、ヘリウム等の不活性ガスや窒素等である。
　なお、ガスノズル３１Ａ、３１Ｂの本数は、２本に限るものではなく、適宜増減してもよい。 The gas introduction mechanism 3 includes two gas nozzles 31 </ b> A and 31 </ b> B that penetrate the side wall of the processing container 2, and supplies a gas necessary for processing to the processing container 2 from a gas supply source (not shown). The gas here is, for example, an inert gas such as argon or helium, nitrogen, or the like.
The number of gas nozzles 31A and 31B is not limited to two, and may be increased or decreased as appropriate.
　排気機構４は、排気が流通する排気通路４１、排気圧力を制御する圧力制御弁４２及び処理容器２内部の雰囲気を排出する排気ポンプ４３を含む。排気ポンプ４３は、排気通路４１、圧力制御弁４２を介して、処理容器２内部の雰囲気を、真空を含む減圧程度まで排気することができる。 The exhaust mechanism 4 includes an exhaust passage 41 through which exhaust flows, a pressure control valve 42 that controls the exhaust pressure, and an exhaust pump 43 that exhausts the atmosphere inside the processing container 2. The exhaust pump 43 can exhaust the atmosphere inside the processing container 2 to a reduced pressure level including a vacuum via the exhaust passage 41 and the pressure control valve 42.
　載置台５は、処理容器２の底部に形成された開口に、シール部材２６を介在させて気密に取り付けられている。載置台５は接地されている。
　載置台５は、載置台本体５１、熱電変換素子５２及び載置板５３を含む。載置台本体５１の上に熱電変換素子５２が、熱電変換素子５２の上に載置板５３が配置される。載置板５３の上には、アニール対象の薄膜Ｈが形成された基板Ｋが載置するように構成されている。 The mounting table 5 is airtightly attached to an opening formed at the bottom of the processing container 2 with a seal member 26 interposed therebetween. The mounting table 5 is grounded.
The mounting table 5 includes a mounting table main body 51, a thermoelectric conversion element 52, and a mounting plate 53. A thermoelectric conversion element 52 is disposed on the mounting table main body 51, and a mounting plate 53 is disposed on the thermoelectric conversion element 52. On the mounting plate 53, the substrate K on which the thin film H to be annealed is formed is mounted.
　放射温度計６は、放射温度計本体６１と光ファイバ６２とを含み、載置板５３の温度を測定する。放射温度計６が測定した載置板５３の温度は、コンピュータ９に送信される。載置板５３の温度を受信したコンピュータ９は、載置板５３及び薄膜Ｈの間の温度勾配を考慮して、載置板５３の温度を薄膜Ｈの温度に変換する。 The radiation thermometer 6 includes a radiation thermometer main body 61 and an optical fiber 62 and measures the temperature of the mounting plate 53. The temperature of the mounting plate 53 measured by the radiation thermometer 6 is transmitted to the computer 9. The computer 9 that has received the temperature of the mounting plate 53 converts the temperature of the mounting plate 53 into the temperature of the thin film H in consideration of the temperature gradient between the mounting plate 53 and the thin film H.
　載置台本体５１には、上面から下面までを上下方向に貫通する貫通孔５１１が形成されており、貫通孔５１１には光ファイバ６２が気密に挿通されている。光ファイバ６２は、載置板５３の下面直下から載置台本体５１の下面を突き抜けて下方へ延び、処理容器２外部に設けられた放射温度計本体６１と接続されている。光ファイバ６２に載置板５３からの輻射光を取り入れることにより、放射温度計６は、載置板５３の温度を測定することができるように構成されている。
　なお、処理容器２の側壁を貫通する貫通孔を設け、貫通孔に気密に挿通された直接薄膜Ｈからの輻射光を光ファイバに取り入れてもよい。これにより、薄膜Ｈの温度の直接測定が可能となる。 A through hole 511 is formed in the mounting table main body 51 so as to vertically penetrate from the upper surface to the lower surface, and the optical fiber 62 is inserted in the through hole 511 in an airtight manner. The optical fiber 62 penetrates the lower surface of the mounting table main body 51 from directly below the lower surface of the mounting plate 53 and extends downward, and is connected to a radiation thermometer main body 61 provided outside the processing container 2. The radiation thermometer 6 is configured to be able to measure the temperature of the mounting plate 53 by incorporating the radiation light from the mounting plate 53 into the optical fiber 62.
In addition, the through-hole which penetrates the side wall of the processing container 2 may be provided, and the radiant light from the direct thin film H inserted airtightly through the through-hole may be taken into the optical fiber. Thereby, the temperature of the thin film H can be directly measured.
　熱電変換素子５２は、基板Ｋを冷却する板状の冷却手段であり、例えばペルチェ素子が用いられる。ペルチェ素子は、ペルチェ効果を利用した板状の半導体素子であり、直流電流を流すことにより一面で発熱が起こり、他面で吸熱が起こる。ここでは、基板Ｋに近い熱電変換素子５２の上側面で吸熱を起こし、基板Ｋを冷却する。他方、熱電変換素子５２の下側面では発熱が起こる。 The thermoelectric conversion element 52 is a plate-like cooling means for cooling the substrate K, and for example, a Peltier element is used. The Peltier element is a plate-like semiconductor element that utilizes the Peltier effect, and generates heat on one side and absorbs heat on the other side when a direct current is applied. Here, heat is absorbed on the upper surface of the thermoelectric conversion element 52 close to the substrate K, and the substrate K is cooled. On the other hand, heat is generated on the lower surface of the thermoelectric conversion element 52.
　熱電変換素子５２は、処理容器２の外部に設けられた熱電変換素子制御部７とリード線７１を介して電気的に接続されている。熱電変換素子制御部７は、アニール時に熱電変換素子５２に供給する電流の方向と大きさとを制御する。熱電変換素子制御部７が熱電変換素子５２に流す電流の方向を逆にすることにより、熱電変換素子５２は基板Ｋを加熱する加熱手段にもなり得る。 The thermoelectric conversion element 52 is electrically connected to the thermoelectric conversion element control unit 7 provided outside the processing container 2 via a lead wire 71. The thermoelectric conversion element control unit 7 controls the direction and magnitude of the current supplied to the thermoelectric conversion element 52 during annealing. The thermoelectric conversion element 52 can also serve as a heating means for heating the substrate K by reversing the direction of the current flowing through the thermoelectric conversion element 52 by the thermoelectric conversion element control unit 7.
　熱電変換素子５２の下側面と対向する載置台本体５１の上部には、冷媒流路５１２が載置台本体５１上面と略平行な面に沿って形成されている。冷媒流路５１２は、冷媒導入管５１３と冷媒排出管５１４とを介して、冷媒を供給する冷媒循環器５１５に接続されている。冷媒循環器５１５が動作することにより、アニール時に冷媒が冷媒流路５１２を流通循環し、熱電変換素子５２の下側面で発熱した熱を冷媒が奪うように構成されている。これにより、熱電変換素子５２の冷却効率が向上する。
　なお、熱電変換素子５２を除き、基板Ｋを冷却する冷却手段は、冷媒循環器５１５による冷媒循環だけでもよい。また、基板Ｋを冷却する冷却手段は、放熱器でもよい。
　なお、冷媒流路５１２に高温の温媒を流通循環させることも可能である。 A coolant channel 512 is formed along a surface substantially parallel to the upper surface of the mounting table main body 51 in the upper portion of the mounting table main body 51 facing the lower surface of the thermoelectric conversion element 52. The refrigerant channel 512 is connected to a refrigerant circulator 515 that supplies a refrigerant via a refrigerant introduction pipe 513 and a refrigerant discharge pipe 514. When the refrigerant circulator 515 operates, the refrigerant circulates and circulates through the refrigerant flow path 512 at the time of annealing, and the refrigerant takes heat generated at the lower surface of the thermoelectric conversion element 52. Thereby, the cooling efficiency of the thermoelectric conversion element 52 improves.
Except for the thermoelectric conversion element 52, the cooling means for cooling the substrate K may be only the refrigerant circulation by the refrigerant circulator 515. The cooling means for cooling the substrate K may be a radiator.
It is also possible to circulate and circulate a high-temperature heating medium in the refrigerant flow path 512.
　載置板５３は、例えば酸化ケイ素、窒化アルミニウム、炭化ケイ素、ゲルマニウム、シリコン等の材料から製作される。
　なお、載置台５に載置板５３を設けず、熱電変換素子５２の上に、直接基板Ｋが載置するように構成してもよい。 The mounting plate 53 is manufactured from a material such as silicon oxide, aluminum nitride, silicon carbide, germanium, or silicon.
The mounting table 53 may not be provided on the mounting table 5, and the substrate K may be directly mounted on the thermoelectric conversion element 52.
　電磁波供給部８は、処理容器２の天板２２の上方に設けられている。
　電磁波供給部８は、電磁波発生源８１、導波管８２及び入射アンテナ８３を含む。導波管８２の一端は電磁波発生源８１と接続され、導波管８２の他端は入射アンテナ８３と接続されている。 The electromagnetic wave supply unit 8 is provided above the top plate 22 of the processing container 2.
The electromagnetic wave supply unit 8 includes an electromagnetic wave generation source 81, a waveguide 82, and an incident antenna 83. One end of the waveguide 82 is connected to the electromagnetic wave generation source 81, and the other end of the waveguide 82 is connected to the incident antenna 83.
　電磁波発生源８１は、例えばジャイロトロン又はマグネトロンを用いることができる。ジャイロトロンは概ねミリ波からサブミリ波にかけての電磁波を発生する。マグネトロンは概ねセンチ波の電磁波を発生する。電磁波発生源８１は、発生した電磁波を導波管８２に出力する。 As the electromagnetic wave generation source 81, for example, a gyrotron or a magnetron can be used. The gyrotron generally generates electromagnetic waves from millimeter waves to submillimeter waves. A magnetron generates a centimeter wave electromagnetic wave. The electromagnetic wave generation source 81 outputs the generated electromagnetic wave to the waveguide 82.
　導波管８２は、電磁波発生源８１で発生した電磁波を入射アンテナ８３に伝搬させる金属製の管であり、円形又は矩形の断面形状を有す。 The waveguide 82 is a metal tube that propagates the electromagnetic wave generated by the electromagnetic wave generation source 81 to the incident antenna 83, and has a circular or rectangular cross-sectional shape.
　入射アンテナ８３は、天板２２の上面に設けられた板であり、例えば表面が銀メッキされた銅板又はアルミニウム板である。入射アンテナ８３には、図示しない複数の鏡面反射レンズや反射ミラーが設けられており、導波管８２から導かれた電磁波を処理容器２の処理空間に向けて反射して導入できるように構成されている。
　なお、入射アンテナ８３は、処理容器２の側面に設けられていてもよい。 The incident antenna 83 is a plate provided on the top surface of the top plate 22 and is, for example, a copper plate or an aluminum plate whose surface is silver-plated. The incident antenna 83 is provided with a plurality of specular reflection lenses and reflection mirrors (not shown), and is configured to reflect and introduce the electromagnetic wave guided from the waveguide 82 toward the processing space of the processing container 2. ing.
The incident antenna 83 may be provided on the side surface of the processing container 2.
　コンピュータ９は、アニール装置１全体の動作を制御する。
　図２は、実施の形態１に係るコンピュータ９のブロック図である。
　コンピュータ９は、制御部９１、ＲＯＭ（Read Only Memory）９２、ＲＡＭ（Random Access Memory）９３、通信部９４、操作部９５、表示部９６、外部インタフェース９７及びタイマ９８を含む。 The computer 9 controls the operation of the annealing apparatus 1 as a whole.
FIG. 2 is a block diagram of the computer 9 according to the first embodiment.
The computer 9 includes a control unit 91, a ROM (Read Only Memory) 92, a RAM (Random Access Memory) 93, a communication unit 94, an operation unit 95, a display unit 96, an external interface 97, and a timer 98.
　ＲＯＭ９２の内部には、各種プログラムが記憶されている。これらのプログラムの１つは、例えば制御部９１に、薄膜Ｈに対して照射する電磁波の周波数として、最も適切な周波数を算出させる。 Various programs are stored in the ROM 92. One of these programs causes the control unit 91 to calculate the most appropriate frequency as the frequency of the electromagnetic wave applied to the thin film H, for example.
　制御部９１は、ＲＯＭ９２からプログラムを読み込み、各種処理を実行する。例えば、制御部９１は、ガス導入機構３が処理容器２に導入するガスの供給及びガスの流量を制御する。制御部９１は、電磁波供給部８が発生する電磁波及び電磁波供給部８への供給電力を制御する。また、制御部９１は、放射温度計６からの信号に基づき、アニール温度を制御する。 The control unit 91 reads a program from the ROM 92 and executes various processes. For example, the control unit 91 controls the supply of gas introduced into the processing container 2 by the gas introduction mechanism 3 and the gas flow rate. The control unit 91 controls the electromagnetic wave generated by the electromagnetic wave supply unit 8 and the power supplied to the electromagnetic wave supply unit 8. The control unit 91 controls the annealing temperature based on the signal from the radiation thermometer 6.
　ＲＡＭ９３は、作業用の変数、測定データ等を一時的に記録する。
　通信部９４は、アニール装置１の各構成部から送信される信号又はデータを受信する。また、通信部９４は、制御部９１の命令をアニール装置１の各構成部へ送信する。 The RAM 93 temporarily records work variables, measurement data, and the like.
The communication unit 94 receives signals or data transmitted from each component of the annealing apparatus 1. In addition, the communication unit 94 transmits a command from the control unit 91 to each component of the annealing apparatus 1.
　操作部９５は、キーボード、マウス等の入力機器を含み、ユーザは操作部９５及び通信部９４を介してコンピュータ９を操作する。ユーザは操作部９５を介してアニール装置１を操作することができる。表示部９６は、通信部９４及び操作部９５を介して入力されたデータ、制御部９１が実行した計算結果等を表示する。 The operation unit 95 includes input devices such as a keyboard and a mouse, and the user operates the computer 9 via the operation unit 95 and the communication unit 94. A user can operate the annealing apparatus 1 via the operation unit 95. The display unit 96 displays data input via the communication unit 94 and the operation unit 95, calculation results executed by the control unit 91, and the like.
　外部インタフェース９７は、ＵＳＢ（Universal Serial Bus）メモリ、ＣＤ－ＲＯＭ（Compact Disc-Read Only Memory）等の可搬型記録媒体１Ａと情報のやり取りをするインタフェースである。また、外部インタフェース９７はインターネット等の通信網Ｎに接続することができるインタフェースでもある。
　タイマ９８は、計時を信号として制御部９１に送信する。 The external interface 97 is an interface for exchanging information with a portable recording medium 1A such as a USB (Universal Serial Bus) memory or a CD-ROM (Compact Disc-Read Only Memory). The external interface 97 is also an interface that can be connected to a communication network N such as the Internet.
The timer 98 transmits the time count to the control unit 91 as a signal.
　実施の形態１に係るアニール装置１を動作させるための各種プログラムは、外部インタフェース９７に可搬型記録媒体１Ａを読み取らせて、ＲＡＭ９３に記録してもよい。また、当該各種プログラムは、外部インタフェース９７及びインターネット等の通信網Ｎを介して接続される他のサーバコンピュータ（図示せず）からダウンロードすることも可能である。 Various programs for operating the annealing apparatus 1 according to the first embodiment may be recorded in the RAM 93 by causing the external interface 97 to read the portable recording medium 1A. The various programs can also be downloaded from another server computer (not shown) connected via the external interface 97 and a communication network N such as the Internet.
　薄膜Ｈに対して照射する電磁波の周波数を算出するプログラムは、アニール対象の薄膜Ｈの厚さを浸透深さとして電磁波の周波数を算出するものである。浸透深さとは、電磁波が垂直に導電性の均質媒質に入射し、当該媒質内を指数関数的に減衰しながら伝搬する場合、電磁波強度が入射強度の１／ｅ（約３７％）に減衰するときの深度のことである。
　浸透深さは式（１）で示される。 The program for calculating the frequency of the electromagnetic wave applied to the thin film H is to calculate the frequency of the electromagnetic wave using the thickness of the thin film H to be annealed as the penetration depth. The penetration depth means that when electromagnetic waves are incident on a conductive homogeneous medium vertically and propagate while exponentially decaying in the medium, the electromagnetic wave intensity is attenuated to 1 / e (about 37%) of the incident intensity. It is the depth of time.
The penetration depth is expressed by equation (1).
Figure JPOXMLDOC01-appb-M000001
Figure JPOXMLDOC01-appb-M000001
　ただし、δは浸透深さ、ρは抵抗率、μは比透磁率、ｆは電磁波の周波数である。
　μは非磁性材の場合、μ＝１となる。実施の形態１で扱う膜材料は非磁性材なので、μは１に固定される。 Where δ is the penetration depth, ρ is the resistivity, μ is the relative permeability, and f is the frequency of the electromagnetic wave.
When μ is a non-magnetic material, μ = 1. Since the film material handled in the first embodiment is a non-magnetic material, μ is fixed to 1.
　実施の形態１で対象とする基板Ｋは、例えばＰＥＴ（ポリエチレンテレフタレート）、ＰＥＮ（ポリエチレンナフタレート）、ＰＣ（ポリカーボネート）等である。これらのプラスチック基板材料のガラス転移点は、夫々１００、１５５、１４５℃である。ここでは、ＰＥＴ基板を用いる。 The substrate K targeted in the first embodiment is, for example, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PC (polycarbonate), or the like. The glass transition points of these plastic substrate materials are 100, 155, and 145 ° C., respectively. Here, a PET substrate is used.
　実施の形態１で対象とする薄膜Ｈは、例えばＰＥＤＯＴ：ＰＳＳである。ＰＥＤＯＴ：ＰＳＳのアニール温度は約２００℃であり、ＰＥＴのガラス転移点よりも高い。そのため、従来のランプ等によるアニール方法でＰＥＤＯＴ：ＰＳＳの薄膜Ｈをアニールした場合、ＰＥＴ基板に変形が生じる。 The thin film H targeted in the first embodiment is, for example, PEDOT: PSS. The annealing temperature of PEDOT: PSS is about 200 ° C., which is higher than the glass transition point of PET. Therefore, when the PEDOT: PSS thin film H is annealed by a conventional annealing method using a lamp or the like, the PET substrate is deformed.
　しかしながら、センチ波、ミリ波、サブミリ波の電磁波に対するＰＥＴ基板の浸透深さは、薄膜Ｈの浸透深さに比べて遙かに深い。そこで、ＰＥＴ基板をほとんど透過し、ＰＥＤＯＴ：ＰＳＳの薄膜Ｈを膜厚の深さまでしか透過しない電磁波の周波数を算出する。具体的には、式（１）の浸透深さに膜厚を、抵抗率に薄膜Ｈの抵抗率を代入して周波数を算出する。得られた周波数の電磁波がミリ波又はサブミリ波である場合、電磁波発生源８１にジャイロトンを搭載したアニール装置１を使用する。得られた周波数の電磁波がセンチ波である場合、電磁波発生源８１にマグネトロンを搭載したアニール装置１を使用する。 However, the penetration depth of the PET substrate with respect to electromagnetic waves of centimeter waves, millimeter waves, and submillimeter waves is much deeper than the penetration depth of the thin film H. Therefore, the frequency of the electromagnetic wave that almost passes through the PET substrate and passes through the thin film H of PEDOT: PSS only to the depth of the film thickness is calculated. Specifically, the frequency is calculated by substituting the film thickness into the penetration depth of the equation (1) and the resistivity of the thin film H into the resistivity. When the electromagnetic wave having the obtained frequency is a millimeter wave or a submillimeter wave, the annealing apparatus 1 in which a gyroton is mounted on the electromagnetic wave generation source 81 is used. When the electromagnetic wave having the obtained frequency is a centimeter wave, the annealing apparatus 1 having a magnetron mounted on the electromagnetic wave generation source 81 is used.
　なお、電磁波の周波数を算出するに際し、薄膜Ｈの膜厚と浸透深さとを等しいものと想定した。しかし例えば、薄膜Ｈの厚さを浸透深さの９０％、１１０％等、適宜変更してもよく、薄膜Ｈの厚さと浸透深さとは等しい場合に限られない。 In calculating the frequency of electromagnetic waves, the film thickness of the thin film H and the penetration depth were assumed to be equal. However, for example, the thickness of the thin film H may be changed as appropriate, such as 90% or 110% of the penetration depth, and the thickness of the thin film H and the penetration depth are not limited to the same.
　次に、実施の形態１に係るアニール装置１の動作について、説明する。
　表１は、２種類のＰＥＤＯＴ：ＰＳＳ膜について、周波数を算出した一例である。 Next, the operation of the annealing apparatus 1 according to the first embodiment will be described.
Table 1 is an example of calculating the frequency for two types of PEDOT: PSS films.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
　Ａは、膜厚として１１２４７ｎｍ、抵抗率５．０×１０-3Ωｃｍを選択した場合の例であり、周波数は１．０×１０11Ｈｚである。Ｂは、膜厚として１１２５ｎｍ、抵抗率５．０×１０-3Ωｃｍを選択した場合の例であり、周波数は１．０×１０13Ｈｚである。 A is an example when 11247 nm is selected as the film thickness and the resistivity is 5.0 × 10 −3 Ωcm, and the frequency is 1.0 × 10 11 Hz. B is an example in the case where 1125 nm and a resistivity of 5.0 × 10 −3 Ωcm are selected as the film thickness, and the frequency is 1.0 × 10 13 Hz.
　コンピュータ９に、操作部９５から薄膜Ｈの膜厚及び抵抗率を代入する。
　表１のＡの場合、制御部９１は、測定に好ましい周波数として、１００ＧＨｚ（ギガヘルツ）を算出する。１００ＧＨｚはミリ波の周波数に該当するため、ユーザは予め算出しておいた概算の周波数から、電磁波発生源８１にジャイロトロンを搭載したアニール装置１を使用する。
　表１のＢの場合、制御部９１は、測定に好ましい周波数として、１０ＴＨｚ（テラヘルツ）を算出する。１０ＴＨｚはサブミリ波の周波数に該当するため、ユーザは予め算出しておいた概算の周波数から、電磁波発生源８１にジャイロトロンを搭載したアニール装置１を使用する。 The thickness and resistivity of the thin film H are substituted into the computer 9 from the operation unit 95.
In the case of A in Table 1, the control unit 91 calculates 100 GHz (gigahertz) as a preferable frequency for measurement. Since 100 GHz corresponds to the frequency of the millimeter wave, the user uses the annealing apparatus 1 in which the gyrotron is mounted on the electromagnetic wave generation source 81 from the approximate frequency calculated in advance.
In the case of B in Table 1, the control unit 91 calculates 10 THz (terahertz) as a preferable frequency for measurement. Since 10 THz corresponds to the frequency of the submillimeter wave, the user uses the annealing apparatus 1 in which the gyrotron is mounted on the electromagnetic wave generation source 81 from the approximate frequency calculated in advance.
　図３は、ＰＥＤＯＴ：ＰＳＳの誘電損の周波数特性を示す説明図である。縦軸は誘電損であり、横軸は周波数である。電磁波の吸収エネルギーは、比誘電率と誘電正接との積である誘電損に比例する。図３に示すようにＰＥＤＯＴ：ＰＳＳの場合、誘電損の極大値は１００ＧＨｚ前後にある。従って、表１のＡの場合のように、ＰＥＤＯＴ：ＰＳＳ薄膜の厚さを１１μｍに設定した場合、算出される周波数は１００ＧＨｚとなり、最も効率のよいアニール処理を施すことができる。一方で、ＰＥＴ基板は、１００ＧＨｚ前後の電磁波が照射されても、浸透深さが深いためにほとんど加熱されず、ＰＥＴ基板の温度はガラス転移点を超えない。 FIG. 3 is an explanatory diagram showing frequency characteristics of dielectric loss of PEDOT: PSS. The vertical axis represents dielectric loss, and the horizontal axis represents frequency. The absorbed energy of electromagnetic waves is proportional to the dielectric loss that is the product of the relative dielectric constant and the dielectric loss tangent. As shown in FIG. 3, in the case of PEDOT: PSS, the maximum value of the dielectric loss is around 100 GHz. Therefore, as in the case of A in Table 1, when the thickness of the PEDOT: PSS thin film is set to 11 μm, the calculated frequency is 100 GHz, and the most efficient annealing can be performed. On the other hand, even if the PET substrate is irradiated with an electromagnetic wave of around 100 GHz, it is hardly heated because the penetration depth is deep, and the temperature of the PET substrate does not exceed the glass transition point.
　以下、表１のＡの場合について説明する。
　ゲートバルブ２４を開き、ＰＥＤＯＴ：ＰＳＳの薄膜Ｈが形成されたＰＥＴ基板を、図示しない搬送手段により載置板５３上に載置する。ゲートバルブ２４を閉じ、処理容器２を密閉する。操作部９５からアニール対象の薄膜Ｈの厚さ及び抵抗率をコンピュータ９に入力する。制御部９１は、薄膜Ｈの厚さ及び抵抗率に基づいて、電磁波の周波数を算出する。 Hereinafter, the case of A in Table 1 will be described.
The gate valve 24 is opened, and the PET substrate on which the PEDOT: PSS thin film H is formed is placed on the placement plate 53 by a conveying means (not shown). The gate valve 24 is closed and the processing container 2 is sealed. The thickness and resistivity of the thin film H to be annealed are input from the operation unit 95 to the computer 9. The controller 91 calculates the frequency of the electromagnetic wave based on the thickness and resistivity of the thin film H.
　制御部９１は、算出値に基づいて、電磁波発生源８１が発生する電磁波の周波数を１００ＧＨｚに設定する。制御部９１は、電磁波発生源８１が発生する電磁波の強度を設定する。制御部９１は、アニール時間及び処理圧力を設定する。制御部９１は、排気機構４により処理容器２内部を排気すると共に、ガス導入機構３のガスノズル３１Ａ、３１Ｂから不活性ガス等を処理容器２内部へ導入する。 The control unit 91 sets the frequency of the electromagnetic wave generated by the electromagnetic wave generation source 81 to 100 GHz based on the calculated value. The controller 91 sets the intensity of the electromagnetic wave generated by the electromagnetic wave generation source 81. The controller 91 sets the annealing time and the processing pressure. The control unit 91 exhausts the inside of the processing container 2 by the exhaust mechanism 4 and introduces an inert gas or the like into the processing container 2 from the gas nozzles 31 </ b> A and 31 </ b> B of the gas introduction mechanism 3.
　制御部９１は、アニール処理を開始する。すなわち、制御部９１は、電磁波発生源８１に設定した周波数の電磁波を発生させる。制御部９１は、冷媒循環器５１５を作動させ、載置台本体５１を冷却すると共に、熱電変換素子制御部７を介して熱電変換素子５２により基板Ｋを冷却する。制御部９１は、放射温度計６を介してアニール温度の制御を開始する。アニール温度の制御は、電磁波の強度を調整することにより行われる。 The control unit 91 starts the annealing process. That is, the control unit 91 generates an electromagnetic wave having a frequency set in the electromagnetic wave generation source 81. The control unit 91 operates the refrigerant circulator 515 to cool the mounting table body 51 and cools the substrate K by the thermoelectric conversion element 52 via the thermoelectric conversion element control unit 7. The controller 91 starts controlling the annealing temperature via the radiation thermometer 6. The annealing temperature is controlled by adjusting the intensity of electromagnetic waves.
　電磁波発生源８１が発生した電磁波は、導波管８２を介して入射アンテナ８３に導かれる。入射アンテナ８３に導かれた電磁波は、入射アンテナ８３により反射されて処理容器２内に供給される。処理容器２内に供給された電磁波は、薄膜Ｈ及び基板Ｋに照射される。 The electromagnetic wave generated by the electromagnetic wave generation source 81 is guided to the incident antenna 83 through the waveguide 82. The electromagnetic wave guided to the incident antenna 83 is reflected by the incident antenna 83 and supplied into the processing container 2. The electromagnetic wave supplied into the processing container 2 is applied to the thin film H and the substrate K.
　制御部９１は、アニール時間が終了したと判断した場合、電磁波発生源８１の駆動を停止する。制御部９１は、アニール温度の制御を停止する。制御部９１は、薄膜Ｈの冷却を待って、ガス導入機構３による不活性ガス等の導入を停止する。制御部９１は、排気機構４による排気を停止する。制御部９１は、熱電変換素子制御部７を介して熱電変換素子５２への電流供給を停止する。制御部９１は、冷媒循環器５１５を停止する。すなわち、制御部９１は、基板Ｋの冷却を停止する。 When the controller 91 determines that the annealing time has ended, the controller 91 stops driving the electromagnetic wave generation source 81. The controller 91 stops the control of the annealing temperature. The controller 91 waits for the thin film H to cool down and stops the introduction of the inert gas or the like by the gas introduction mechanism 3. The controller 91 stops the exhaust by the exhaust mechanism 4. The control unit 91 stops supplying current to the thermoelectric conversion element 52 via the thermoelectric conversion element control unit 7. The controller 91 stops the refrigerant circulator 515. That is, the controller 91 stops cooling the substrate K.
　ゲートバルブ２４を開き、図示しない搬送手段により載置板５３上の試料を処理容器２外部へ取り出す。ゲートバルブ２４を閉じ、処理容器２を密閉する。 The gate valve 24 is opened, and the sample on the mounting plate 53 is taken out of the processing container 2 by a conveying means (not shown). The gate valve 24 is closed and the processing container 2 is sealed.
　図４及び図５は、実施の形態１に係るアニール装置１のアニール処理の手順を示すフローチャートである。
　制御部９１は、薄膜Ｈの膜厚及び薄膜Ｈの抵抗率を受け付ける（ステップＳ１０１）。制御部９１は、受け付けた薄膜Ｈの膜厚及び薄膜Ｈの抵抗率に基づいて、式（１）より試料に照射する電磁波の周波数を算出する（ステップＳ１０２）。制御部９１は、算出した周波数を電磁波発生源８１が発生する電磁波の周波数に設定する（ステップＳ１０３）。制御部９１は、電磁波発生源８１が発生する電磁波の強度を設定する（ステップＳ１０４）。制御部９１は、アニール時間を設定する（ステップＳ１０５）。制御部９１は、処理圧力を設定する（ステップＳ１０６）。 4 and 5 are flowcharts showing the procedure of the annealing process of the annealing apparatus 1 according to the first embodiment.
The controller 91 receives the film thickness of the thin film H and the resistivity of the thin film H (step S101). The control unit 91 calculates the frequency of the electromagnetic wave applied to the sample from the equation (1) based on the received thickness of the thin film H and the resistivity of the thin film H (step S102). The control unit 91 sets the calculated frequency to the frequency of the electromagnetic wave generated by the electromagnetic wave generation source 81 (step S103). The controller 91 sets the intensity of the electromagnetic wave generated by the electromagnetic wave generation source 81 (step S104). The controller 91 sets an annealing time (step S105). The controller 91 sets a processing pressure (step S106).
　制御部９１は、処理容器２内部を排気する（ステップＳ１０７）。制御部９１は、ガスノズル３１Ａ、３１Ｂから不活性ガス等を処理容器２内部へ導入する（ステップＳ１０８）。制御部９１は、電磁波発生源８１に電磁波を発生させる（ステップＳ１０９）。制御部９１は、冷媒循環器５１５を作動させ、載置台本体５１を冷却すると共に、熱電変換素子制御部７を介して熱電変換素子５２により基板Ｋの冷却を開始する（ステップＳ１１０）。制御部９１は、アニール温度の制御を開始する（ステップＳ１１１）。 The control unit 91 exhausts the inside of the processing container 2 (step S107). The controller 91 introduces an inert gas or the like from the gas nozzles 31A and 31B into the processing container 2 (step S108). The controller 91 causes the electromagnetic wave generation source 81 to generate an electromagnetic wave (step S109). The control unit 91 operates the refrigerant circulator 515 to cool the mounting table main body 51 and starts cooling the substrate K by the thermoelectric conversion element 52 via the thermoelectric conversion element control unit 7 (step S110). The controller 91 starts controlling the annealing temperature (step S111).
　制御部９１は、アニール時間が経過したか否かタイマ９８に基づいて判断する（ステップＳ１１２）。制御部９１は、アニール時間が経過していないと判断した場合（ステップＳ１１２：ＮＯ）、制御をステップＳ１１２へ戻す。制御部９１は、アニール時間が経過したと判断した場合（ステップＳ１１２：ＹＥＳ）、電磁波発生源８１による電磁波の発生を停止する（ステップＳ１１３）。制御部９１は、アニール温度の制御を停止する（ステップＳ１１４）。制御部９１は、ガス導入機構３による不活性ガス等の導入を停止する（ステップＳ１１５）。制御部９１は、排気機構４による排気を停止する（ステップＳ１１６）。制御部９１は、基板Ｋの冷却を停止し（ステップＳ１１７）、処理を終了する。 The control unit 91 determines whether the annealing time has elapsed based on the timer 98 (step S112). When it is determined that the annealing time has not elapsed (step S112: NO), the controller 91 returns the control to step S112. When the controller 91 determines that the annealing time has elapsed (step S112: YES), the controller 91 stops the generation of electromagnetic waves by the electromagnetic wave generation source 81 (step S113). The controller 91 stops the control of the annealing temperature (step S114). The controller 91 stops the introduction of an inert gas or the like by the gas introduction mechanism 3 (Step S115). The controller 91 stops the exhaust by the exhaust mechanism 4 (step S116). The controller 91 stops the cooling of the substrate K (step S117) and ends the process.
　なお、ステップＳ１０１では、制御部９１は、薄膜Ｈの抵抗率を受け付ける。しかし、各種材料の抵抗率を予めＲＯＭ９２に記録しておき、制御部９１はＲＯＭ９２から薄膜Ｈの抵抗率を読み込んでもよい。かかる場合、制御部９１は、ステップＳ１０１で薄膜Ｈの材料を受け付け、受け付けた薄膜Ｈの材料に基づいてＲＯＭ９２から薄膜Ｈの抵抗率を読み込む。 In step S101, the control unit 91 receives the resistivity of the thin film H. However, the resistivity of various materials may be recorded in the ROM 92 in advance, and the control unit 91 may read the resistivity of the thin film H from the ROM 92. In such a case, the control unit 91 receives the material of the thin film H in step S101, and reads the resistivity of the thin film H from the ROM 92 based on the received material of the thin film H.
　なお、ステップＳ１０２では、制御部９１は、受け付けた薄膜Ｈの膜厚及び薄膜Ｈの抵抗率に基づいて、式（１）より試料に照射する電磁波の周波数を算出する。しかし、ユーザが薄膜Ｈの膜厚及び薄膜Ｈの抵抗率に基づいて、式（１）より試料に照射する電磁波の周波数を算出し、制御部９１はユーザから周波数の入力を受け付ける形態でもよい。かかる場合、ステップＳ１０１及びステップＳ１０２における制御部９１の処理は、周波数を受け付ける処理になる。ステップＳ１０３では、制御部９１は、受け付けた周波数を電磁波発生源８１が発生する電磁波の周波数に設定する。 In step S102, the control unit 91 calculates the frequency of the electromagnetic wave applied to the sample from Equation (1) based on the received film thickness of the thin film H and the resistivity of the thin film H. However, the user may calculate the frequency of the electromagnetic wave applied to the sample from Equation (1) based on the film thickness of the thin film H and the resistivity of the thin film H, and the control unit 91 may receive the frequency input from the user. In such a case, the processing of the control unit 91 in step S101 and step S102 is processing for receiving a frequency. In step S103, the control unit 91 sets the received frequency to the frequency of the electromagnetic wave generated by the electromagnetic wave generation source 81.
　表２は、無機導電性材料及び半導体材料について、浸透深さを試算した一例である。 Table 2 is an example in which the penetration depth was estimated for the inorganic conductive material and the semiconductor material.
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003
　Ｃの銀は、膜厚として１９４８ｎｍ、抵抗率１．５×１０-6Ωｃｍを選択した場合の例であり、周波数は１．０×１０ 9Ｈｚである。Ｄの銀は、膜厚として１９５ｎｍ、抵抗率１．５×１０-6Ωｃｍを選択した場合の例であり、周波数は１．０×１０11Ｈｚである。
　Ｅの銅は、膜厚として２０１２ｎｍ、抵抗率１．６×１０-6Ωｃｍを選択した場合の例であり、周波数は１．０×１０ 9Ｈｚである。Ｆの銅は、膜厚として２０１ｎｍ、抵抗率１．６×１０-6Ωｃｍを選択した場合の例であり、周波数は１．０×１０11Ｈｚである。
　Ｇのアルミニウムは、膜厚として２５１５ｎｍ、抵抗率２．５×１０-6Ωｃｍを選択した場合の例であり、周波数は１．０×１０ 9Ｈｚである。Ｈのアルミニウムは、膜厚として２５２ｎｍ、抵抗率２．５×１０-6Ωｃｍを選択した場合の例であり、周波数は１．０×１０11Ｈｚである。
　Ｊのシリコンは、膜厚として５０３０ｎｍ、抵抗率１．０×１０-1Ωｃｍを選択した場合の例であり、周波数は１．０×１０13Ｈｚである。 The silver of C is an example when a film thickness of 1948 nm and a resistivity of 1.5 × 10 −6 Ωcm is selected, and the frequency is 1.0 × 10 9 Hz. Silver of D is an example in which a film thickness of 195 nm and a resistivity of 1.5 × 10 −6 Ωcm are selected, and the frequency is 1.0 × 10 11 Hz.
The copper E is an example in which a film thickness of 2012 nm and a resistivity of 1.6 × 10 −6 Ωcm is selected, and the frequency is 1.0 × 10 9 Hz. The copper of F is an example when the film thickness is 201 nm and the resistivity is 1.6 × 10 −6 Ωcm, and the frequency is 1.0 × 10 11 Hz.
The aluminum of G is an example in which a film thickness of 2515 nm and a resistivity of 2.5 × 10 −6 Ωcm are selected, and the frequency is 1.0 × 10 9 Hz. The aluminum of H is an example when the film thickness is 252 nm and the resistivity is 2.5 × 10 −6 Ωcm, and the frequency is 1.0 × 10 11 Hz.
The silicon of J is an example when the film thickness is 5030 nm and the resistivity is 1.0 × 10 −1 Ωcm, and the frequency is 1.0 × 10 13 Hz.
　表２のＣ、Ｅ、Ｇの場合、電磁波発生源８１にセンチ波の電磁波を照射するマグネトロンを搭載したアニール装置１を使用する。表２のＤ、Ｆ、Ｈ、Ｊの場合、電磁波発生源８１にミリ波及びサブミリ波の電磁波を照射するジャイロトロンを搭載したアニール装置１を使用する。
　また、夫々の薄膜Ｈの膜厚及び抵抗率に応じて、表２に示した周波数の電磁波を選択してアニール処理を施す。このように、膜材料の違いに応じた電磁波の周波数を選択することで、基板Ｋの温度をガラス転移点以上の温度にすることなく、薄膜Ｈを選択的に加熱することができる。 In the case of C, E, and G in Table 2, the annealing apparatus 1 equipped with a magnetron that irradiates the electromagnetic wave generation source 81 with a centimeter wave electromagnetic wave is used. In the case of D, F, H, and J in Table 2, the annealing apparatus 1 equipped with a gyrotron that irradiates the electromagnetic wave generation source 81 with millimeter wave and submillimeter wave electromagnetic waves is used.
Moreover, according to the film thickness and resistivity of each thin film H, the electromagnetic wave of the frequency shown in Table 2 is selected, and it anneals. Thus, by selecting the frequency of the electromagnetic wave according to the difference in the film material, the thin film H can be selectively heated without making the temperature of the substrate K higher than the glass transition point.
　実施の形態１に係るアニール装置１によれば、基板Ｋ及び薄膜Ｈのうち、薄膜Ｈをより高温で選択的に加熱することができる。
　薄膜Ｈの厚さが電磁波の浸透深さに該当する周波数のセンチ波、ミリ波又はサブミリ波（周波数は３ＧＨｚ～５０ＴＨｚに該当）を基板Ｋ及び薄膜Ｈに照射することにより、基板Ｋをほとんど加熱することなく、薄膜Ｈを選択的に加熱することができる。
　廉価な多くの有機材料基板は、有機導電性膜材料のアニール温度よりも低いガラス転移点を有す。そのため、実施の形態１に係るアニール装置１によれば、有機材料基板の変形を起こさずに有機導電性膜材料の薄膜Ｈのアニール処理が可能となり、有機デバイスの製造コストの低減を図ることができる。 According to the annealing apparatus 1 according to the first embodiment, the thin film H can be selectively heated at a higher temperature among the substrate K and the thin film H.
By irradiating the substrate K and the thin film H with centimeter waves, millimeter waves, or submillimeter waves having a frequency corresponding to the penetration depth of the electromagnetic wave to the substrate K and the thin film H, the substrate K is almost heated. Without this, the thin film H can be selectively heated.
Many inexpensive organic material substrates have a glass transition point below the annealing temperature of the organic conductive film material. Therefore, according to the annealing apparatus 1 according to the first embodiment, the thin film H of the organic conductive film material can be annealed without causing deformation of the organic material substrate, and the manufacturing cost of the organic device can be reduced. it can.
　実施の形態１に係るアニール装置１によれば、熱電変換素子５２及び冷媒循環器５１５により基板Ｋの温度上昇を抑えることができる。
　電磁波が基板Ｋにほとんど吸収されない場合であっても、アニール時間が長引くほど、薄膜Ｈから基板Ｋへ熱が流れ、基板Ｋの温度は上昇する。しかし、熱電変換素子５２及び冷媒循環器５１５により基板Ｋを冷却することにより、熱平衡の過渡状態を長引かせることができる。電気伝導度等の膜特性はアニール温度が高く、アニール時間が長いほど向上するので、基板Ｋの冷却は膜特性向上に寄与する。 According to annealing apparatus 1 according to the first embodiment, temperature increase of substrate K can be suppressed by thermoelectric conversion element 52 and refrigerant circulator 515.
Even when electromagnetic waves are hardly absorbed by the substrate K, as the annealing time is prolonged, heat flows from the thin film H to the substrate K, and the temperature of the substrate K increases. However, by cooling the substrate K by the thermoelectric conversion element 52 and the refrigerant circulator 515, the transient state of thermal equilibrium can be prolonged. Film characteristics such as electrical conductivity are improved as the annealing temperature is higher and the annealing time is longer. Therefore, the cooling of the substrate K contributes to the improvement of the film characteristics.
　実施の形態２
　実施の形態２は、可撓性を有す基板Ｋの上に薄膜Ｈを形成するロールツーロール製造ラインに、成膜装置、アニール装置及び物性測定装置を組み込んだ薄膜基板製造システムに関する。 Embodiment 2
The second embodiment relates to a thin film substrate manufacturing system in which a film forming apparatus, an annealing apparatus, and a physical property measuring apparatus are incorporated in a roll-to-roll manufacturing line for forming a thin film H on a flexible substrate K.
　実施の形態２で対象とする基板Ｋは、例えばフィルム状のＰＥＴ基板、ＰＥＮ基板等である。
　実施の形態２で対象とする薄膜Ｈは、例えばＰＥＤＯＴ：ＰＳＳ、シリルエチン置換ペンタセン、ポリ（３－アルキルチオフェン）等の薄膜Ｈである。 The board | substrate K made into object in Embodiment 2 is a film-like PET board | substrate, a PEN board | substrate, etc., for example.
The target thin film H in the second embodiment is a thin film H such as PEDOT: PSS, silylethyne-substituted pentacene, or poly (3-alkylthiophene).
　図６は、実施の形態２に係る薄膜基板製造システム１００のブロック図である。
　薄膜基板製造システム１００は、基板移送部１１、成膜装置１２、アニール装置１０、物性測定装置１３及びコンピュータ９０を含む。
　成膜装置１２、アニール装置１０及び物性測定装置１３は、この順に基板移送部１１による移送ラインの上流から下流へ配置されている。 FIG. 6 is a block diagram of the thin film substrate manufacturing system 100 according to the second embodiment.
The thin film substrate manufacturing system 100 includes a substrate transfer unit 11, a film forming device 12, an annealing device 10, a physical property measuring device 13, and a computer 90.
The film forming apparatus 12, the annealing apparatus 10 and the physical property measuring apparatus 13 are arranged in this order from the upstream to the downstream of the transfer line by the substrate transfer unit 11.
　基板移送部１１は、巻き出しロール１１１、巻き取りロール１１２及び基板Ｋを移送する移送ロール１１３、１１４を含む。基板移送部１１は、巻き出しロール１１１に巻かれた基板Ｋを、適切な張力及び速度で巻き出し、成膜装置１２及びアニール装置１０により形成された薄膜基板を巻き取りロール１１２に巻き取る。移送ロール１１３、１１４は、回転駆動により基板Ｋを上流から下流へ移送する。基板移送部１１の動作は、連続的又は不連続的である。
　なお、基板移送部１１は、巻き出しロール１１１及び巻き取りロール１１２を含まなくてもよい。かかる場合、巻き出しロール１１１及び巻き取りロール１１２を回転する回転駆動部を別途用意する。 The substrate transfer unit 11 includes an unwinding roll 111, a take-up roll 112, and transfer rolls 113 and 114 that transfer the substrate K. The substrate transfer unit 11 unwinds the substrate K wound on the unwinding roll 111 at an appropriate tension and speed, and winds the thin film substrate formed by the film forming apparatus 12 and the annealing apparatus 10 on the winding roll 112. The transfer rolls 113 and 114 transfer the substrate K from upstream to downstream by rotational driving. The operation of the substrate transfer unit 11 is continuous or discontinuous.
The substrate transfer unit 11 may not include the unwinding roll 111 and the winding roll 112. In such a case, a rotation driving unit that rotates the unwinding roll 111 and the winding roll 112 is separately prepared.
　図６には、移送ロール１１３、１１４が２本描かれているが、移送ロール１１３、１１４の数は一例であり、適宜増減することができる。なお、基板移送部１１は、基板Ｋの移送能率を向上するために、基板Ｋを移送ロール１１３、１１４との間で夫々挟む複数の押さえロールを含んでもよい。
　図６では、基板移送部１１は基板Ｋの幅方向を水平方向に保持して、基板Ｋを水平方向に移送している。しかし、基板移送部１１は基板Ｋの幅方向を鉛直方向に保持して、基板Ｋを鉛直方向に移送してもよい。 Although two transfer rolls 113 and 114 are illustrated in FIG. 6, the number of transfer rolls 113 and 114 is an example, and can be increased or decreased as appropriate. The substrate transfer unit 11 may include a plurality of pressing rolls that sandwich the substrate K between the transfer rolls 113 and 114 in order to improve the transfer efficiency of the substrate K.
In FIG. 6, the substrate transfer unit 11 holds the width direction of the substrate K in the horizontal direction and transfers the substrate K in the horizontal direction. However, the substrate transfer unit 11 may transfer the substrate K in the vertical direction while holding the width direction of the substrate K in the vertical direction.
　成膜装置１２は、例えば印刷により基板Ｋ表面に膜パターンを形成するパターン形成装置である。印刷によるパターン形成の対象は、ソース・ドレイン印刷、半導体印刷、ゲート印刷等を含む。なお、成膜装置１２は、ガスから材料を基板Ｋ上に堆積させるＣＶＤ装置、ＰＶＤ装置等であってもよい。 The film forming apparatus 12 is a pattern forming apparatus that forms a film pattern on the surface of the substrate K by printing, for example. The target of pattern formation by printing includes source / drain printing, semiconductor printing, gate printing, and the like. The film forming apparatus 12 may be a CVD apparatus, a PVD apparatus, or the like that deposits a material on a substrate K from a gas.
　アニール装置１０は、ロールツーロール方式に対応している点が実施の形態１に係るアニール装置１と異なる。
　図７は、実施の形態２に係るアニール装置１０のブロック図である。ここでは、アニール装置１０について、実施の形態１に係るアニール装置１と異なる部分について説明する。 Annealing apparatus 10 is different from annealing apparatus 1 according to the first embodiment in that it corresponds to a roll-to-roll system.
FIG. 7 is a block diagram of annealing apparatus 10 according to the second embodiment. Here, parts of annealing apparatus 10 that are different from annealing apparatus 1 according to the first embodiment will be described.
　アニール装置１０は、開口２３及びゲートバルブ２４を含まない。
　処理容器２の側壁の対向位置には、アニール前の基板Ｋ及び薄膜Ｈを搬入する搬入口２７と、アニール後の基板Ｋ及び薄膜Ｈを搬出する搬出口２８とが開口されている。搬入口２７及び搬出口２８は、夫々基板Ｋの幅よりも長いスリット状をなし、略同じ高さに設けられている。
　搬入口２７及び搬出口２８には、夫々シャッタ２７Ａ、２８Ａが設けられている。シャッタ２７Ａ、２８Ａは、基板移送部１１が基板Ｋの移送を停止し、基板Ｋ及び薄膜Ｈに電磁波が照射される場合、処理容器２内部の電磁波及びガスが外部へ漏れないようにシールドする。シャッタ２７Ａ、２８Ａは、夫々軟らかい金属、例えばインジウム、銅等から形成されており、基板移送部１１が基板Ｋの移送を停止した場合、基板Ｋを圧接する。 The annealing apparatus 10 does not include the opening 23 and the gate valve 24.
At the opposite position of the side wall of the processing vessel 2, a carry-in port 27 for carrying in the substrate K and the thin film H before annealing and a carry-out port 28 for carrying out the substrate K and the thin film H after annealing are opened. The carry-in port 27 and the carry-out port 28 each have a slit shape longer than the width of the substrate K, and are provided at substantially the same height.
Shutters 27A and 28A are provided at the carry-in port 27 and the carry-out port 28, respectively. The shutters 27 </ b> A and 28 </ b> A shield the electromagnetic wave and gas inside the processing container 2 from leaking outside when the substrate transfer unit 11 stops transferring the substrate K and the substrate K and the thin film H are irradiated with electromagnetic waves. The shutters 27A and 28A are each made of a soft metal, such as indium or copper, and press the substrate K when the substrate transfer unit 11 stops the transfer of the substrate K.
　物性測定装置１３は、テラヘルツ分光装置、膜厚測定装置及び赤外分光装置を含む。テラヘルツ分光装置は、薄膜Ｈに対するテラヘルツ波の透過率又は反射率を測定する。膜厚測定装置は、薄膜Ｈの厚さを測定し、測定した薄膜Ｈの厚さをテラヘルツ分光装置に送信する。テラヘルツ分光装置は、膜厚測定装置から薄膜Ｈの厚さを受信する。赤外分光装置は、薄膜Ｈに対する赤外域の反射率を測定し、測定した赤外域の反射率をテラヘルツ分光装置に送信する。テラヘルツ分光装置は、赤外分光装置から薄膜Ｈに対する赤外域の反射率を受信する。 The physical property measuring device 13 includes a terahertz spectroscopic device, a film thickness measuring device, and an infrared spectroscopic device. The terahertz spectrometer measures the transmittance or reflectance of the terahertz wave with respect to the thin film H. The film thickness measuring device measures the thickness of the thin film H and transmits the measured thickness of the thin film H to the terahertz spectrometer. The terahertz spectrometer receives the thickness of the thin film H from the film thickness measuring device. The infrared spectrometer measures the reflectance of the infrared region with respect to the thin film H, and transmits the measured reflectance of the infrared region to the terahertz spectrometer. The terahertz spectrometer receives the infrared reflectance of the thin film H from the infrared spectrometer.
　テラヘルツ分光装置は、テラヘルツ波の透過率又は反射率、薄膜Ｈの厚さ、赤外域の反射率に基づいて、薄膜Ｈの複素屈折率、複素誘電率、複素電気伝導度、キャリア移動度等の物性値を算出する。物性測定装置１３又はテラヘルツ分光装置は、算出された薄膜Ｈの物性値をコンピュータ９０に送信する。 The terahertz spectrometer is based on the transmittance or reflectance of the terahertz wave, the thickness of the thin film H, the reflectance in the infrared region, and the like, such as the complex refractive index, complex dielectric constant, complex electrical conductivity, carrier mobility, etc. Calculate physical properties. The physical property measuring device 13 or the terahertz spectrometer transmits the calculated physical property value of the thin film H to the computer 90.
　図８は、実施の形態２に係るコンピュータ９０のブロック図である。
　コンピュータ９０の構成は、実施の形態１に係るアニール装置１に含まれるコンピュータ９の構成と同様である。なお、コンピュータ９０は、アニール装置１０に含まれるコンピュータ９で代用してもよい。
　コンピュータ９０は、基板移送部１１、成膜装置１２、アニール装置１０及び物性測定装置１３と電気的に接続されており、これら装置を制御する。 FIG. 8 is a block diagram of a computer 90 according to the second embodiment.
The configuration of the computer 90 is the same as the configuration of the computer 9 included in the annealing apparatus 1 according to the first embodiment. Note that the computer 90 may be substituted by the computer 9 included in the annealing apparatus 10.
The computer 90 is electrically connected to the substrate transfer unit 11, the film forming apparatus 12, the annealing apparatus 10, and the physical property measuring apparatus 13, and controls these apparatuses.
　次に、実施の形態２に係る薄膜基板製造システム１００の動作について説明する。
　まず、薄膜基板製造システム１００を動作させる準備として、予めアニール装置１０の電磁波発生源８１が発生する電磁波の周波数をコンピュータ９０に設定する。 Next, the operation of the thin film substrate manufacturing system 100 according to Embodiment 2 will be described.
First, in preparation for operating the thin film substrate manufacturing system 100, the frequency of the electromagnetic wave generated by the electromagnetic wave generation source 81 of the annealing apparatus 10 is set in the computer 90 in advance.
　コンピュータ９０に、操作部９５０から薄膜Ｈの抵抗率及び膜厚を入力する。コンピュータ９０の制御部９１０は、取得した薄膜Ｈの抵抗率及び膜厚をアニール装置１０のコンピュータ９に送信する。コンピュータ９は、薄膜Ｈの抵抗率及び膜厚を受信し、アニールに好適な電磁波の周波数を算出する。コンピュータ９０は、算出した周波数を電磁波発生源８１が発生する電磁波の周波数に設定する。 The resistivity and film thickness of the thin film H are input to the computer 90 from the operation unit 950. The control unit 910 of the computer 90 transmits the acquired resistivity and film thickness of the thin film H to the computer 9 of the annealing apparatus 10. The computer 9 receives the resistivity and film thickness of the thin film H, and calculates the frequency of electromagnetic waves suitable for annealing. The computer 90 sets the calculated frequency to the frequency of the electromagnetic wave generated by the electromagnetic wave generation source 81.
　基板Ｋのロールを巻き出しロール１１１に取り付け、薄膜基板製造システム１００の動作を開始させる。 The substrate K roll is attached to the unwinding roll 111, and the operation of the thin film substrate manufacturing system 100 is started.
　図９は、実施の形態２に係るコンピュータ９０の制御部９１０が実行する処理の手順を示すフローチャートである。
　制御部９１０は、基板移送部１１、成膜装置１２、アニール装置１０及び物性測定装置１３の動作を開始する（ステップＳ２０１）。その具体的な内容は、以下の通りである。
　制御部９１０は、基板移送部１１を動作させ、基板Ｋをロールツーロール生産ラインに巻き出す。制御部９１０は、成膜装置１２を動作させて、基板Ｋ表面にパターンを印刷させる。制御部９１０は、コンピュータ９を介して、アニール装置１０に成膜装置１２が形成した薄膜Ｈをアニールさせる。制御部９１０は、物性測定装置１３にアニール装置１０がアニールした薄膜Ｈの物性を測定させる。制御部９１０は、製造した薄膜基板を巻き取りロール１１２に巻き取らせる。 FIG. 9 is a flowchart illustrating a procedure of processing executed by the control unit 910 of the computer 90 according to the second embodiment.
The control unit 910 starts the operations of the substrate transfer unit 11, the film forming apparatus 12, the annealing apparatus 10, and the physical property measuring apparatus 13 (Step S201). The specific contents are as follows.
The control unit 910 operates the substrate transfer unit 11 to unwind the substrate K to the roll-to-roll production line. The control unit 910 operates the film forming apparatus 12 to print a pattern on the surface of the substrate K. The controller 910 causes the annealing apparatus 10 to anneal the thin film H formed by the film forming apparatus 12 via the computer 9. The control unit 910 causes the physical property measuring device 13 to measure the physical properties of the thin film H annealed by the annealing device 10. The controller 910 causes the manufactured thin film substrate to be taken up by the take-up roll 112.
　物性測定装置１３は、測定した物性値をコンピュータ９０に送信する。
　制御部９１０は、物性測定装置１３から薄膜Ｈの物性値を取得する（ステップＳ２０２）。制御部９１０は、薄膜Ｈの物性値が製造規格の範囲内か否か判断する（ステップＳ２０３）。制御部９１０は、薄膜Ｈの物性値が製造規格の範囲内であると判断した場合（ステップＳ２０３：ＹＥＳ）、ステップＳ２０１に制御を戻す。制御部９１０は、薄膜Ｈの物性値が製造規格の範囲内にないと判断した場合（ステップＳ２０３：ＮＯ）、基板移送部１１、成膜装置１２、アニール装置１０及び物性測定装置１３の動作を停止する（ステップＳ２０４）。
　制御部９１０は、以上のステップをマルチタスクで連続的に実行する。
　基板移送部１１、成膜装置１２、アニール装置１０及び物性測定装置１３の動作を停止した場合、ユーザは巻き取りロール１１２から製造規格外の薄膜基板を取り外す。 The physical property measuring device 13 transmits the measured physical property value to the computer 90.
The control unit 910 acquires the physical property value of the thin film H from the physical property measuring device 13 (step S202). The control unit 910 determines whether the physical property value of the thin film H is within the range of the manufacturing standard (step S203). When the control unit 910 determines that the physical property value of the thin film H is within the range of the manufacturing standard (step S203: YES), the control unit 910 returns the control to step S201. When the control unit 910 determines that the physical property value of the thin film H is not within the range of the manufacturing standard (step S203: NO), the operation of the substrate transfer unit 11, the film forming apparatus 12, the annealing apparatus 10, and the physical property measuring apparatus 13 is performed. Stop (step S204).
The control unit 910 executes the above steps continuously in multitasking.
When the operations of the substrate transfer unit 11, the film forming device 12, the annealing device 10, and the physical property measuring device 13 are stopped, the user removes the non-manufacturing thin film substrate from the winding roll 112.
　制御部９１０は、ユーザからの指示待ち状態となる。ユーザは薄膜基板の製造を再開するか否かをコンピュータ９０に指示する。制御部９１０は、ユーザからの指示を受け付け、基板移送部１１、成膜装置１２、アニール装置１０及び物性測定装置１３の動作を再開するか否か判断する（ステップＳ２０５）。制御部９１０は、動作を再開する場合（ステップＳ２０５：ＹＥＳ）、成膜装置１２に成膜条件を変更させるか、又はアニール装置１０にアニール条件を変更させ（ステップＳ２０６）、ステップＳ２０１に処理を戻す。ここでの成膜条件の変更は、例えばレジスト条件、プリント速度等のパターン形成条件を変更することである。ここでのアニール条件の変更は、例えば電磁波の強度を所定値だけ大きい値に設定することである。あるいは、アニール条件の変更は、アニール時間を変更することである。制御部９１０は、動作を再開しない場合（ステップＳ２０５：ＮＯ）、処理を終了する。 The control unit 910 waits for an instruction from the user. The user instructs the computer 90 whether or not to resume manufacturing the thin film substrate. The control unit 910 receives an instruction from the user, and determines whether or not to resume the operations of the substrate transfer unit 11, the film forming apparatus 12, the annealing apparatus 10, and the physical property measuring apparatus 13 (step S205). When the operation is resumed (step S205: YES), the control unit 910 causes the film forming apparatus 12 to change the film forming conditions or causes the annealing apparatus 10 to change the annealing conditions (step S206), and performs processing in step S201. return. The change of the film forming conditions here is to change pattern forming conditions such as resist conditions and printing speed, for example. The change of the annealing conditions here is, for example, to set the intensity of the electromagnetic wave to a value that is larger by a predetermined value. Alternatively, the annealing condition is changed by changing the annealing time. When the operation is not resumed (step S205: NO), the control unit 910 ends the process.
　実施の形態２に係る薄膜基板製造システム１００によれば、ロールツーロール方式により薄膜基板を連続的に製造することができる。また、ロールツーロール製造ラインに物性測定装置１３を組み込むことにより、製造中の薄膜基板の品質が製造規格から外れている場合、製造ラインを停止することができる。これにより、歩留りの向上を図ることができる。 According to the thin film substrate manufacturing system 100 according to the second embodiment, the thin film substrate can be continuously manufactured by the roll-to-roll method. In addition, by incorporating the physical property measuring device 13 in the roll-to-roll production line, the production line can be stopped when the quality of the thin film substrate being produced is out of the production standard. Thereby, the yield can be improved.
　実施の形態２に係る薄膜基板製造システム１００によれば、製造中の薄膜基板の品質が製造規格から外れている場合、短時間で薄膜基板の製造条件を最適化した後、製造を再開することができる。薄膜基板の製造条件を最適化することは、例えば電磁波の強度を変更することである。実施の形態２に係る薄膜基板製造システム１００は、かかるフィードバック機能を有しているため、薄膜基板の生産効率を向上させることができる。 According to the thin film substrate manufacturing system 100 according to the second embodiment, when the quality of the thin film substrate being manufactured is out of the manufacturing standards, the manufacturing conditions of the thin film substrate are optimized in a short time, and then the manufacturing is resumed. Can do. Optimizing the manufacturing conditions of the thin film substrate is, for example, changing the intensity of electromagnetic waves. Since the thin film substrate manufacturing system 100 according to the second embodiment has such a feedback function, the production efficiency of the thin film substrate can be improved.
　本実施の形態２は以上の如きであり、その他は実施の形態１と同様であるので、対応する部分には同一の参照番号を付してその詳細な説明を省略する。 The second embodiment is as described above, and the other parts are the same as those of the first embodiment. Therefore, the corresponding parts are denoted by the same reference numerals, and detailed description thereof is omitted.
　実施の形態３
　実施の形態３は、実施の形態２に係る薄膜基板製造システム１００のアニール装置１０を、他のアニール装置に置き換えた形態に関する。 Embodiment 3
The third embodiment relates to a mode in which the annealing apparatus 10 of the thin film substrate manufacturing system 100 according to the second embodiment is replaced with another annealing apparatus.
　図１０は、実施の形態３に係るアニール装置２０のブロック図である。
　実施の形態３に係るアニール装置２０は、実施の形態２に係るアニール装置１０の載置台５を含まず、代わりに載置ロール５０を含む。
　また、実施の形態３に係るアニール装置２０は、放射温度計６の光ファイバ６２が基板Ｋからの輻射光を受ける点で、実施の形態２のアニール装置１０と異なる。 FIG. 10 is a block diagram of annealing apparatus 20 according to the third embodiment.
The annealing apparatus 20 according to the third embodiment does not include the mounting table 5 of the annealing apparatus 10 according to the second embodiment, but includes a mounting roll 50 instead.
Further, the annealing apparatus 20 according to the third embodiment is different from the annealing apparatus 10 according to the second embodiment in that the optical fiber 62 of the radiation thermometer 6 receives radiation light from the substrate K.
　載置ロール５０は、円柱状又は楕円柱状をなし、処理容器２の底部に形成された開口に、一部嵌入するように取り付けられている。載置ロール５０は、図示しない様式で接地されている。載置ロール５０は、軸の周りを回転するように構成されており、側面と接する基板Ｋを移送する機能と基板Ｋを冷却する機能とがある。
　基板移送部１１が基板Ｋの移送を停止し、基板Ｋ及び薄膜Ｈに電磁波が照射される場合、図示しないシャッタが載置ロール５０と処理容器２底部との間の隙間を閉鎖するように構成されている。当該シャッタは、軟らかい金属、例えばインジウム、銅等から形成され、基板移送部１１が基板Ｋの移送を停止した場合、載置ロール５０の一部及び処理容器２底部の一部を圧接する。当該シャッタは、基板移送部１１が基板Ｋの移送を再開した場合、載置ロール５０と処理容器２底部との間の隙間を開放する。 The mounting roll 50 has a cylindrical shape or an elliptical column shape, and is attached so as to be partially inserted into an opening formed in the bottom of the processing container 2. The mounting roll 50 is grounded in a manner not shown. The mounting roll 50 is configured to rotate around an axis, and has a function of transferring the substrate K in contact with the side surface and a function of cooling the substrate K.
When the substrate transfer unit 11 stops the transfer of the substrate K and the substrate K and the thin film H are irradiated with electromagnetic waves, a shutter (not shown) is configured to close the gap between the mounting roll 50 and the bottom of the processing container 2. Has been. The shutter is made of a soft metal such as indium or copper, and when the substrate transfer unit 11 stops transferring the substrate K, it presses a part of the mounting roll 50 and a part of the bottom of the processing container 2. The shutter opens a gap between the placement roll 50 and the bottom of the processing container 2 when the substrate transfer unit 11 resumes the transfer of the substrate K.
　載置ロール５０は、載置ロール本体５１０、熱電変換素子５２０及び載置ロール板５３０を含む。円柱状の載置ロール本体５１０の外側面に複数の熱電変換素子５２０が、熱電変換素子５２０の外側面に円筒状の載置ロール板５３０が、夫々取り巻くように配置されている。基板Ｋは、載置ロール板５３０の最上位の位置に載置する。 The mounting roll 50 includes a mounting roll body 510, a thermoelectric conversion element 520, and a mounting roll plate 530. A plurality of thermoelectric conversion elements 520 are disposed on the outer surface of the columnar mounting roll body 510, and a cylindrical mounting roll plate 530 is disposed on the outer surface of the thermoelectric conversion element 520. The substrate K is placed at the uppermost position of the placement roll plate 530.
　熱電変換素子５２０の内側面と対向する載置台本体５１０の縁部には、冷媒流路５１２が載置台本体５１０外側面と略平行な円筒状の面に沿って形成されている。冷媒流路５１２は、冷媒導入管５１３と冷媒排出管５１４とを介して、冷媒を供給する冷媒循環器５１５に接続されている。冷媒循環器５１５が動作することにより、アニール時に冷媒が冷媒流路５１２を流通循環し、熱電変換素子５２０の内側面で発熱した熱を冷媒が奪うように構成されている。これにより、熱電変換素子５２０の冷却効率が向上する。
　なお、冷媒流路５１２に温媒を流通循環させることも可能である。 A coolant channel 512 is formed along the cylindrical surface substantially parallel to the outer surface of the mounting table main body 510 at the edge of the mounting table main body 510 facing the inner surface of the thermoelectric conversion element 520. The refrigerant channel 512 is connected to a refrigerant circulator 515 that supplies a refrigerant via a refrigerant introduction pipe 513 and a refrigerant discharge pipe 514. By operating the refrigerant circulator 515, the refrigerant circulates through the refrigerant flow path 512 during annealing, and the refrigerant takes away heat generated on the inner surface of the thermoelectric conversion element 520. Thereby, the cooling efficiency of the thermoelectric conversion element 520 improves.
Note that it is also possible to circulate and circulate the heating medium through the refrigerant flow path 512.
　載置ロール板５３０は、例えば酸化ケイ素、窒化アルミニウム、炭化ケイ素、ゲルマニウム、シリコン等の材料から製作される。
　なお、載置ロール５０に載置ロール板５３０を設けず、熱電変換素子５２０の外側面上に、直接基板Ｋが載置するように構成してもよい。 The mounting roll plate 530 is made of a material such as silicon oxide, aluminum nitride, silicon carbide, germanium, or silicon.
In addition, the mounting roll plate 530 may not be provided on the mounting roll 50, and the substrate K may be directly mounted on the outer surface of the thermoelectric conversion element 520.
　処理容器２の底部には、貫通孔２９が形成されており、貫通孔２９には光ファイバ６２が気密に挿通されている。光ファイバ６２は貫通孔２９を介して底部を貫通し、その一端は放射温度計本体６１と接続されている。光ファイバ６２の他端は基板Ｋの直下まで上方へ延び、基板Ｋからの輻射光を取り入れる。
　このように、アニール装置２０の放射温度計６は、基板Ｋの温度を測定する。放射温度計６が測定した基板Ｋの温度は、アニール装置２０のコンピュータ９に信号として送信される。コンピュータ９は、放射温度計６からの信号を受信し、基板Ｋの温度を薄膜Ｈの温度に換算する。 A through hole 29 is formed at the bottom of the processing container 2, and an optical fiber 62 is inserted into the through hole 29 in an airtight manner. The optical fiber 62 penetrates the bottom through the through hole 29, and one end thereof is connected to the radiation thermometer main body 61. The other end of the optical fiber 62 extends upward to just below the substrate K, and takes in the radiated light from the substrate K.
Thus, the radiation thermometer 6 of the annealing apparatus 20 measures the temperature of the substrate K. The temperature of the substrate K measured by the radiation thermometer 6 is transmitted as a signal to the computer 9 of the annealing apparatus 20. The computer 9 receives the signal from the radiation thermometer 6 and converts the temperature of the substrate K into the temperature of the thin film H.
　実施の形態３に係るアニール装置２０によれば、載置ロール５０がロール状の形状をなし、回転して基板Ｋを移送するため、ロールツーロール方式に対応したスムーズな基板Ｋの移動が可能である。これにより、薄膜基板製造システム１００は薄膜基板を効率的に連続生産することができる。載置ロール５０は、基板Ｋを冷却する熱電変換素子５２０及び冷媒流路５１２を備えているため、基板Ｋを冷却することにより、薄膜Ｈの選択的加熱に寄与する。 According to the annealing apparatus 20 according to the third embodiment, since the mounting roll 50 has a roll shape and rotates to transfer the substrate K, the substrate K can be smoothly moved corresponding to the roll-to-roll method. It is. Thereby, the thin film substrate manufacturing system 100 can efficiently and continuously produce thin film substrates. Since the mounting roll 50 includes the thermoelectric conversion element 520 that cools the substrate K and the coolant channel 512, the mounting roll 50 contributes to selective heating of the thin film H by cooling the substrate K.
　本実施の形態３は以上の如きであり、その他は実施の形態１又は実施の形態２と同様であるので、対応する部分には同一の参照番号を付してその詳細な説明を省略する。 The third embodiment is as described above, and the other parts are the same as those in the first or second embodiment. Therefore, the corresponding parts are denoted by the same reference numerals, and detailed description thereof is omitted.
　１　　アニール装置
　８　　電磁波供給部
　８１　電磁波発生源
　８２　導波管
　８３　入射アンテナ
　９１　制御部
　Ｋ　　基板
　Ｈ　　薄膜
　Ｓ　　試料
  DESCRIPTION OF SYMBOLS 1 Annealing apparatus 8 Electromagnetic wave supply part 81 Electromagnetic wave generation source 82 Waveguide 83 Incident antenna 91 Control part K Substrate H Thin film S Sample

Claims (11)

  1. 　基板及び該基板表面に形成された薄膜に電磁波を照射して加熱し、該薄膜をアニールするアニール装置において、
    　所与の前記薄膜の膜厚及び抵抗率に基づいて、前記基板及び薄膜に照射する電磁波の周波数を算出する算出手段と、
    　該算出手段が算出した周波数の電磁波を前記基板及び薄膜に照射する電磁波供給手段と
    　を備える
    　ことを特徴とするアニール装置。     In an annealing apparatus that heats the substrate and the thin film formed on the surface of the substrate by irradiating with electromagnetic waves, and annealing the thin film,
    Calculating means for calculating the frequency of electromagnetic waves applied to the substrate and the thin film based on the film thickness and resistivity of the given thin film;
    An annealing apparatus comprising: an electromagnetic wave supplying unit that irradiates the substrate and the thin film with an electromagnetic wave having a frequency calculated by the calculating unit.
  2. 　前記算出手段は、
    　前記薄膜に対する電磁波の浸透深さが該薄膜の膜厚に対応するように、電磁波の周波数を算出するようにしてある
    　ことを特徴とする請求項１に記載のアニール装置。     The calculating means includes
    The annealing apparatus according to claim 1, wherein the frequency of the electromagnetic wave is calculated so that a penetration depth of the electromagnetic wave with respect to the thin film corresponds to a film thickness of the thin film.
  3. 　前記電磁波供給手段は、
    　前記基板よりも薄膜をより高温に加熱するようにしてある
    　ことを特徴とする請求項１又は請求項２に記載のアニール装置。     The electromagnetic wave supply means includes
    The annealing apparatus according to claim 1, wherein the thin film is heated to a higher temperature than the substrate.
  4. 　前記基板を冷却する冷却手段
    　を備える
    　ことを特徴とする請求項１から請求項３までのいずれか一項に記載のアニール装置。     The annealing apparatus according to any one of claims 1 to 3, further comprising a cooling unit that cools the substrate.
  5. 　基板及び該基板表面に形成された薄膜に電磁波を照射して加熱し、該薄膜をアニールするアニール方法において、
    　前記薄膜の膜厚及び抵抗率に基づいて、前記基板及び薄膜に照射する電磁波の周波数を算出し、
    　算出した周波数の電磁波を用いて、前記基板よりも薄膜をより高温に加熱する
    　ことを特徴とするアニール方法。     In the annealing method of annealing the thin film by heating the substrate and the thin film formed on the substrate surface by irradiating with electromagnetic waves,
    Based on the film thickness and resistivity of the thin film, calculate the frequency of the electromagnetic wave irradiated to the substrate and the thin film,
    An annealing method, wherein an electromagnetic wave having a calculated frequency is used to heat a thin film to a higher temperature than the substrate.
  6. 　前記基板は有機材料からなる
    　ことを特徴とする請求項５に記載のアニール方法。     The annealing method according to claim 5, wherein the substrate is made of an organic material.
  7. 　前記基板を冷却する
    　ことを特徴とする請求項５又は請求項６に記載のアニール方法。     The annealing method according to claim 5 or 6, wherein the substrate is cooled.
  8. 　巻き出しロールに巻かれた可撓性を有する基板を巻き出し、巻き取りロールに巻き取る移送の過程で、該基板表面に薄膜を形成する成膜装置を設けた薄膜基板製造システムにおいて、
    　前記成膜装置が形成した薄膜を任意のアニール条件でアニールする請求項１から請求項４までのいずれか一項に記載のアニール装置と、
    　該アニール装置がアニールした薄膜の物性を測定する物性測定装置と
    　を含むことを特徴とする薄膜基板製造システム。     In the thin film substrate manufacturing system provided with a film forming apparatus for forming a thin film on the surface of the substrate in the process of unwinding the flexible substrate wound on the unwinding roll and winding it on the winding roll,
    The annealing apparatus according to any one of claims 1 to 4, wherein the thin film formed by the film forming apparatus is annealed under an arbitrary annealing condition;
    A thin film substrate manufacturing system comprising: a physical property measuring device for measuring physical properties of the annealed thin film.
  9. 　前記物性測定装置から信号を受信し、前記成膜装置の動作を制御する制御装置
    　を含み、
    　前記成膜装置、アニール装置及び物性測定装置は、前記巻き出しロール及び巻き取りロールの間の移送路に沿って配置され、
    　前記物性測定装置は、
    　所定の信号を前記制御装置に送信する送信手段
    　を有し、
    　前記制御装置は、
    　前記物性測定装置の送信手段が送信した前記所定の信号を受信した場合、前記成膜装置の動作を停止する手段
    　を有する
    　ことを特徴とする請求項８に記載の薄膜基板製造システム。     A control device that receives a signal from the physical property measuring device and controls the operation of the film forming device;
    The film forming apparatus, the annealing apparatus, and the physical property measuring apparatus are disposed along a transfer path between the unwinding roll and the winding roll,
    The physical property measuring apparatus is:
    Transmission means for transmitting a predetermined signal to the control device;
    The control device includes:
    The thin film substrate manufacturing system according to claim 8, further comprising means for stopping the operation of the film forming apparatus when the predetermined signal transmitted by the transmitting means of the physical property measuring apparatus is received.
  10. 　前記制御装置は、
    　前記アニール装置のアニール条件を設定するようにしてあり、
    　前記物性測定装置の送信手段が送信した前記所定の信号を受信した場合、前記アニール装置のアニール条件を変更する手段
    　を有する
    　ことを特徴とする請求項９に記載の薄膜基板製造システム。     The control device includes:
    Annealing conditions of the annealing apparatus are set,
    The thin film substrate manufacturing system according to claim 9, further comprising means for changing an annealing condition of the annealing apparatus when the predetermined signal transmitted by the transmitting means of the physical property measuring apparatus is received.
  11. 　任意の移送速度で、前記基板を巻き出しロールから巻き出して移送し、該基板表面に薄膜が形成された薄膜基板を巻き取りロールに巻き取る基板移送手段
    　を含み、
    　前記制御装置は、
    　前記基板移送手段の移送速度を制御するようにしてあり、
    　前記物性測定装置の送信手段が送信した前記所定の信号を受信した場合、前記基板移送手段の移送速度を変更する手段
    　を有する
    　ことを特徴とする請求項９又は請求項１０に記載の薄膜基板製造システム。
          Substrate transfer means for unwinding and transferring the substrate from an unwinding roll at an arbitrary transfer speed, and winding the thin film substrate having a thin film formed on the surface of the substrate on a winding roll;
    The control device includes:
    The transfer speed of the substrate transfer means is controlled,
    11. The thin film substrate manufacturing method according to claim 9, further comprising means for changing a transfer speed of the substrate transfer unit when the predetermined signal transmitted by the transmission unit of the physical property measuring apparatus is received. system.
PCT/JP2011/054328 2010-03-01 2011-02-25 Annealing device, annealing method, and thin-film substrate manufacturing system WO2011108463A1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013070008A (en) * 2011-09-26 2013-04-18 Toshiba Corp Semiconductor device and manufacturing method of the same
WO2015049205A1 (en) * 2013-10-01 2015-04-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Device and method for the continuous production of porous silicon layers

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5717598B2 (en) * 2011-09-27 2015-05-13 株式会社東芝 Semiconductor manufacturing apparatus and semiconductor manufacturing method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221209A (en) * 1985-07-19 1987-01-29 Nec Corp High-frequency annealing method
JPH01280311A (en) * 1988-05-06 1989-11-10 Matsushita Electron Corp Heating furnace
JPH07235504A (en) * 1993-12-28 1995-09-05 Canon Inc Deposited film forming method and device therefor
JPH1070130A (en) * 1996-08-26 1998-03-10 Sanyo Electric Co Ltd Heat-treating conductive thin film using a-c magnetic field
JP2003068669A (en) * 2001-08-27 2003-03-07 Denso Corp Method and device for heat treatment to semiconductor wafer
JP2003096556A (en) * 2001-09-20 2003-04-03 Fuji Xerox Co Ltd Method and apparatus for depositing thin film of crystalline compound on sheet base material
JP2005139498A (en) * 2003-11-05 2005-06-02 Bridgestone Corp Method for treating thin film, crystalline thin film, film with crystalline titanium oxide, photocatalytic film, semiconductor electrode for dye-sensitization type solar cell and apparatus for treating thin film
JP2007258286A (en) * 2006-03-22 2007-10-04 Tokyo Electron Ltd Heat treatment apparatus and method, and storage medium
JP2009270133A (en) * 2008-04-30 2009-11-19 Fujifilm Corp Method and apparatus for manufacturing functional film

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221209A (en) * 1985-07-19 1987-01-29 Nec Corp High-frequency annealing method
JPH01280311A (en) * 1988-05-06 1989-11-10 Matsushita Electron Corp Heating furnace
JPH07235504A (en) * 1993-12-28 1995-09-05 Canon Inc Deposited film forming method and device therefor
JPH1070130A (en) * 1996-08-26 1998-03-10 Sanyo Electric Co Ltd Heat-treating conductive thin film using a-c magnetic field
JP2003068669A (en) * 2001-08-27 2003-03-07 Denso Corp Method and device for heat treatment to semiconductor wafer
JP2003096556A (en) * 2001-09-20 2003-04-03 Fuji Xerox Co Ltd Method and apparatus for depositing thin film of crystalline compound on sheet base material
JP2005139498A (en) * 2003-11-05 2005-06-02 Bridgestone Corp Method for treating thin film, crystalline thin film, film with crystalline titanium oxide, photocatalytic film, semiconductor electrode for dye-sensitization type solar cell and apparatus for treating thin film
JP2007258286A (en) * 2006-03-22 2007-10-04 Tokyo Electron Ltd Heat treatment apparatus and method, and storage medium
JP2009270133A (en) * 2008-04-30 2009-11-19 Fujifilm Corp Method and apparatus for manufacturing functional film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013070008A (en) * 2011-09-26 2013-04-18 Toshiba Corp Semiconductor device and manufacturing method of the same
WO2015049205A1 (en) * 2013-10-01 2015-04-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Device and method for the continuous production of porous silicon layers
US10790170B2 (en) 2013-10-01 2020-09-29 Fraunhofer-Gesellscahft zur Foerderung der angewandten Forschung e.V. Device and method for continuous production of porous silicon layers

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