WO2011097802A1 - 全包围栅cmos场效应晶体管 - Google Patents

全包围栅cmos场效应晶体管 Download PDF

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WO2011097802A1
WO2011097802A1 PCT/CN2010/070633 CN2010070633W WO2011097802A1 WO 2011097802 A1 WO2011097802 A1 WO 2011097802A1 CN 2010070633 W CN2010070633 W CN 2010070633W WO 2011097802 A1 WO2011097802 A1 WO 2011097802A1
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Prior art keywords
channel
region
gate
field effect
effect transistor
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PCT/CN2010/070633
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English (en)
French (fr)
Inventor
肖德元
王曦
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中国科学院上海微系统与信息技术研究所
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Priority to PCT/CN2010/070633 priority Critical patent/WO2011097802A1/zh
Priority to US12/810,578 priority patent/US8354721B2/en
Publication of WO2011097802A1 publication Critical patent/WO2011097802A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/845—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Definitions

  • the present invention relates to the field of semiconductor manufacturing technologies, and in particular, to a fully enclosed gate CMOS field effect transistor.
  • CMOS Complementary Metal Oxide Semiconductor
  • Spirit OS N-type metal oxide semiconductor transistor
  • PM0S P-type metal oxide semiconductor transistor
  • SCE Short Channel Effect
  • the S0I ultra-thin body device can also work in the channel overall accumulation mode.
  • the S0I ultra-thin body device flows through the entire S0I ultra-thin body in the accumulation mode, which improves the carrier mobility, reduces the low-frequency noise of the device, and reduces the short-channel effect. It is very beneficial, while increasing the threshold voltage of the device and avoiding the polysilicon gate depletion effect.
  • the inversion mode field effect transistor has different impurity doping types of the source region and the drain region than the channel impurity doping type, the conductive carriers are minority carriers (small children), and the source region and the drain region are respectively in the trench. There is a PN junction between the tracks. This knot The device is currently the most widely used.
  • the impurity doping type of the source and drain regions is the same as the channel impurity doping type, the conductive carriers are majority carriers (multiple sub-), and the source and drain regions are respectively in the channel. There is no PN junction between them, so it is also called a PN-free junction field effect transistor. Since the carrier mobility is a bulk material mobility, it has a high carrier mobility.
  • the hole mobility at the (110) Si substrate current along the ⁇ 110> crystal orientation flow is more than doubled compared with the conventional (100) Si substrate.
  • the electron mobility is the highest on the (100) Si substrate.
  • the CMOS device is fabricated on the (100) crystal Si surface with buried oxide layer, while the PMOS device is fabricated on the (110) crystal plane Si, and the performance of the PM0S device is greatly improved.
  • I. Ff 100 ⁇ / ⁇
  • (110) The drive current of the PM0S device on the bottom of the village is increased by 45%.
  • the disadvantage is that the PMOS device fabricated on the epitaxial layer has no buried oxide layer to isolate it from the substrate, so device performance is still affected.
  • the present invention proposes a full-enclosed gate CMOS field effect transistor.
  • SUMMARY OF THE INVENTION The technical problem to be solved by the present invention is to provide a full-enclosed gate CMOS field effect transistor.
  • the present invention adopts the following technical solutions:
  • a fully enclosed gate CMOS field effect transistor comprising: a semiconductor substrate, a NMOS region having a second channel over the semiconductor substrate, a PMOS region having a first channel over the awake region, and a gate a region, the PMOS region and the MN region further including a source region and a drain region at both ends of the channel; the gate region completely surrounding the surfaces of the first channel and the second channel; A first buried insulating layer is disposed between the PMOS region and the NMOS region; and a second buried insulating layer is disposed between the NMOS region and the semiconductor substrate.
  • the PM0S region uses (110) S i material, NM0S region i or uses (100) S i material.
  • the present invention also provides a full-enclosed gate CMOS field effect transistor comprising: a semiconductor substrate, a PMOS region having a first channel over a semiconductor substrate, and a NMOS region having a second channel over the PMOS region And a gate region, the PMOS region and the NMOS region further comprising source and drain regions respectively located at opposite ends of the channel; the gate region completely surrounding the surfaces of the first channel and the second channel; A first buried insulating layer is disposed between the NMOS region and the PMOS region; and a second buried insulating layer is disposed between the PMOS region and the semiconductor substrate.
  • the PM0S region uses (110) S i material
  • the NM0S region uses (100 ) Si material.
  • the fully enclosed gate CMOS field effect transistor device of the invention has a simple structure, a compact structure and a high integration degree. It adopts a full-enclosed gate structure, and the PM0S region and the MN region are arranged longitudinally, and each has a buried insulating layer to isolate it, which can effectively reduce leakage current, and enable the device to have better performance and further scale-down capability. .
  • the PM0S region and the ⁇ 0S region are targeted to use two different crystal orientation S i materials, which is beneficial to further improve the carrier migration rate and avoid polysilicon gate depletion and short channel effect.
  • FIG. la-lc is a schematic structural diagram of a device according to Embodiment 1 of the present invention:
  • Figure la is a top view
  • Figure lb is a cross-sectional view of Figure la along XX';
  • Figure lc is a cross-sectional view of the diagram la along the TV direction.
  • FIG. 1d is a perspective view of a channel portion of a device structure according to Embodiment 1 of the present invention.
  • 1e is a top plan view of a transistor in the first embodiment of the present invention.
  • Figure If is a cross-sectional view of the graph le along XX'.
  • FIGS. 2a-2c are schematic diagrams showing the structure of a device according to a third embodiment of the present invention:
  • Figure 2a is a plan view;
  • Figure 2b is a cross-sectional view along line XX' of Figure 2a;
  • Figure 2c is a cross-sectional view of Figure 2a taken along the line ZZ'.
  • 2d is a top plan view of a transistor in a third embodiment of the present invention.
  • Figure 2e is a cross-sectional view along line XX' of Figure 2d.
  • an all-enclosed gate CMOS field effect transistor provided in an accumulation mode in the embodiment includes: a semiconductor substrate 100, a MN region 300 having a second channel 301 on a semiconductor substrate, A PMOS region 400 having a first channel 401 and a gate region 500 are located above the NMOS region 300.
  • the PMOS region 400 and the MOS region 300 further include source and drain regions respectively located at opposite ends of the channel.
  • the first channel 401 and the second channel 301 are both substantially circular in cross section, preferably the channel is in the shape of a cylinder, and the first channel 401 is preferably a p-type (110) S i material.
  • the second channel 301 is preferably an n-type (100) S i material.
  • the gate region 500 completely surrounds the surfaces of the first channel 401 and the second channel 301.
  • a first buried insulating layer 201 (BOX) is provided to isolate them to avoid mutual interference between the regions.
  • a second buried insulating layer 202 is provided in addition to the portion covered by the gate region 500. The second buried insulating layer 202 can isolate the NMOS region 300 from the underlying semiconductor substrate 100, effectively reducing leakage current, thereby improving device performance.
  • the source region 403 of the PM0S region and the drain region 402 of the PMOS region are preferably heavily doped p-type (110) S i materials; the source region 303 of the NMOS region and the drain region 302 of the NMOS region are preferably n-type (100) S i material.
  • the source/drain regions 303, 302 located in the lower layer have a length parallel to the channel direction (XX').
  • the length of the upper and lower source and drain regions 403, 402 is exposed to expose the source and drain regions 303, 302 of the lower layer, thereby facilitating the extraction of the electrodes.
  • the width of both ends of the source/drain region perpendicular to the channel direction is greater than the width of the channel, that is, the PMOS region 400 and the MN region 300 have a fin shape that is wide at both ends.
  • the gate region 500 includes: a gate dielectric layer 501 completely surrounding the surfaces of the first trench 401 and the second trench 301, and a gate material completely surrounding the gate dielectric layer 501.
  • Layer 502. wherein the gate material layer 502 is selected from the group consisting of titanium, nickel, tantalum, tungsten, tantalum nitride, tungsten nitride, titanium nitride, titanium silicide, tungsten silicide, nickel silicide or a combination thereof;
  • the material of the gate dielectric layer 502 may be one of silicon dioxide, a silicon oxynitride compound, a silicon oxycarbide compound or a germanium-based high dielectric constant material.
  • the underlying semiconductor substrate 100 is a Si substrate, and may be other semiconductor materials such as Ge Ga In.
  • the first channel 401 and the second channel 301 have a length L of 10 to 50 nm, and a cross-sectional diameter d of 10 to 80.
  • the layer insulating layer 201 or the second buried insulating layer 202 has a thickness of 10 to 200 nm, and the material thereof is silicon dioxide.
  • the above device structure can be fabricated using a conventional planar CMOS process.
  • n-type and p-type channel ion implantation are respectively performed on a two-layer SOI silicon substrate having a (100) crystal orientation and a (110) crystal orientation, and then, by photolithography and dry etching, (100)
  • the Si layer and the (110) S i layer respectively form fin-shaped active regions with wide ends at the ends, and the thinner portions among them will serve as n-type and p-type channels;
  • the corrosive liquid corrodes the obtained structure.
  • the intermediate portion having a thin intermediate portion (as part of the n-type and p-type channel) is buried underneath.
  • the layers of insulation will be etched away, causing them to be hollowed out.
  • the active region with a narrow intermediate width is partially melted, and the cross section is changed from the original square to the circular shape after annealing at the surface tension, forming a channel of the cylinder; using low pressure chemical vapor deposition or atomic layer
  • the deposition technique grows the gate dielectric layer, respectively wraps the two trenches, and then deposits the gate material layer, and then performs photolithography and dry etching to form the gate; respectively, the source and drain are respectively performed on the wide ends of the fin active region Align ion implantation to form source and drain regions.
  • the source and drain regions located in the lower layer are exposed by photolithography and dry etching. A source and a drain are separately formed on the source and drain regions.
  • Figure le is the crystal of the embodiment
  • an insulator dielectric spacer structure 503 is further disposed on both sides of the gate, and the material thereof may be silicon dioxide, silicon nitride or the like.
  • the present invention adopts a more accurate fluid mechanics model and a quantum mechanical density grading model, and considers and applies a mobility degradation model related to doping and surface roughness for 3D simulation.
  • the simulation results show that the accumulation mode full-enclosed gate CMOS field effect transistor provided in this embodiment has many conventional fin-shaped field effect transistor devices.
  • current flows through the entire cylindrical channel and has high carrier mobility. , low and low frequency device noise, and can avoid polysilicon gate depletion and short channel effect, increasing the threshold voltage of the device.
  • the device's switching current ratio is greater than 10 6 , indicating good performance and further scaling down.
  • the embodiment provides an inversion mode full-enclosed gate CMOS field effect transistor, which is different from the first embodiment in that the first channel is an n-type (110) S i material, and the second channel for! Type (100) S i material.
  • the device simulation shows that the inversion mode full-enclosed gate CMOS field effect transistor provided in this embodiment has high carrier mobility and low-low frequency device noise in the reverse mode, which can avoid polysilicon gate depletion and short trench. Advantages such as the road effect.
  • FIGS. 2a-2e shows a device structure of an accumulation mode full-enclosed gate CMOS field effect transistor, as shown in FIGS. 2a-2e, including: a semiconductor substrate 100' having a first channel 401 above the semiconductor substrate a PM0S region 400', a ⁇ 0S region 300' having a second channel 301' and a gate region 500' above the PMOS region 400', the PMOS region 400' and the MN region 300' are also respectively located The source and drain regions at both ends of the channel.
  • the first channel 401 ′ and the second channel 301 ′ are both substantially circular in cross section, that is, in a cylindrical shape, and the first channel 401 ′ is preferably a p-type (110 ) S i material.
  • the second channel 30 is preferably an n-type (100) S i material.
  • the gate region 500' completely surrounds the surfaces of the first channel 401' and the second channel 301'.
  • a first buried insulating layer 201' is also provided to isolate them to avoid mutual interference between the areas.
  • a second buried insulating layer 202' is provided in addition to the portion covered by the gate region 500'. The second buried insulating layer 202' can isolate the PMOS region 400' from the underlying semiconductor substrate 10 (K, effectively reducing leakage current, thereby improving device performance.
  • the source region 403' of the PM0S region and The drain region 402' of the PM0S region is preferably a heavily doped p-type (110) S i material; the source region 303' of the NMOS region and the drain region 302' of the NMOS region are preferably n-type (100) S i materials.
  • the source/drain regions 403, 402 located in the lower layer are parallel to the channel direction (XX') and have a length greater than the length of the upper source and drain regions 303, 302, thereby exposing the source and drain regions 403, 402 of the lower layer. Convenient for the extraction of the electrodes.
  • the width of both ends of the source/drain region perpendicular to the channel direction is greater than the channel width, that is, the PM0S region 400' and the NMOS region 300' are fin-shaped with a narrow central end.
  • the gate region 500' includes: a gate dielectric layer 50 completely surrounding the surfaces of the first trench 401' and the second trench 301', and the gate dielectric layer 50 is completely A surrounding gate material layer 502'.
  • the gate material layer 502' is selected from the group consisting of titanium, nickel, tantalum, tungsten, tantalum nitride, tungsten nitride, titanium nitride, titanium silicide, tungsten silicide, nickel silicide or a combination thereof;
  • the material of the gate dielectric layer 502' may be one of silicon dioxide, a silicon oxynitride compound, a silicon oxycarbide compound or a germanium-based high dielectric constant material.
  • the semiconductor substrate 100' is a Si substrate, and may be other semiconductor materials such as Ge, Ga, and In.
  • the difference from the first embodiment is that the MN area 300' is located above the PM0S area 400', and the PMOS area 400' is close to the semiconductor substrate 100', except for the other technical solutions of the first embodiment.
  • a complete transistor can be obtained by subsequent semiconductor fabrication processes.
  • Fig. 2d is a plan view of the transistor of the embodiment, and Fig. 2e is a cross-sectional view thereof.
  • An insulator dielectric spacer structure 503' is also formed on both sides of the gate, and the material thereof may be silicon dioxide, silicon nitride or the like.
  • This embodiment provides an inversion mode full-enclosed gate CMOS field effect transistor, which is the same as the third embodiment. The difference is that the first channel is an n-type (110) Si material, and the second channel is a p-type (100) Si material.

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Description

全包围栅 CMOS场效应晶体管
技术领域 本发明涉及半导体制造技术领域， 尤其涉及一种全包围栅 CMOS场效应晶 体管。
背景技术 互补金属氧化物半导体 （ CMOS , Complementary Metal Oxide Semiconductor ) 器件是在将 N型金属氧化物半导体晶体管 （靈 OS ) 与 P型金 属氧化物半导体晶体管 （PM0S ) 集成在同一块硅片上的半导体器件。 随着器 件尺寸的不断缩小， CMOS器件沟道长度按比例继续缩小所面临的挑战是如何 在控制器件漏电流（1。„)的同时保持较高的电流驱动能力（I。n)并且阈值电压有 4艮好的稳定性。 短沟道效应（SCE)成为所有常规平面 CMOS 器件按比例进一步 缩小所难以逾越的一道障碍， 它导致器件特性的退化， 为进一步缩小常规平 面 CMOS器件设置限制。
对于沟道长度以纳米为长度单位的器件来讲， 主要由栅极电场来控制沟 道电导而不受漏极散射电场影响变得非常重要。 对于 S0I 器件来讲， 不管是 釆用部分耗尽还是全耗尽设计， 均可以通过减小硅的厚度改善上述问题。 与 常规平面 CMOS器件相比， 基于沟道反型工作模式的双栅或三栅鳍形场效应管 具备很好的栅控制及按比例缩小能力。 与 S0I 超薄体可以工作于沟道整体反 型模式一样， S0I超薄体器件也可以工作于沟道整体积累模式。 与全耗尽型场 效应管相比， S0I超薄体器件在积累工作模式下， 电流流过整个 S0I超薄体， 这对于提高载流子迁移率， 减小器件低频噪声以及短沟道效应是非常有益的， 同时增大了器件的阈值电压以及避免多晶硅栅耗尽效应。 其中， 反型模式场 效应晶体管， 其源区和漏区的杂质掺杂类型与沟道杂质掺杂类型不同， 导电 载流子为少数载流子（少子） ， 源区和漏区分别于沟道之间存在 PN结。 此结 构器件目前应用最为广泛。 积累模式场效应晶体管， 其源区和漏区的杂质掺 杂类型与沟道杂质掺杂类型相同， 导电载流子为多数载流子 （多子） ， 源区 和漏区分别于沟道之间不存在 PN结， 因此又被称为无 PN结场效应晶体管。 由于载流子迁移率为体材料迁移率， 因而具备较高的载流子迁移率。
另一方面，在 Si材料中， 空穴迁移率在 （110) Si衬底电流沿 <110〉晶向 流动与传统的 （100) Si 村底相比增加一倍以上。 而电子迁移率在 （100) Si 衬底是最高的。 为充分利用载流子迁移率依赖于 Si表面晶向的优势， IBM公 司的 Yang等人开发出一种釆用混合晶体取向 Si衬底制造 CMOS电路的新技术。 Yang M, leong M, Shi L等人于 2003年在 《Digest of Technical Paper of International Electron Devices Meeting》 杂志上发表的文章 《High performance CMOS fabricated on hybrid substrate with different crystal orientations》 中介绍了他们的技术。 其通过键合和选择性外延技术， 丽 0S 器件制作在具有埋层氧化层的（100)晶面 Si表面上， 而 PM0S器件制作在（110) 晶面 Si上， PM0S器件性能取得极大提高。 当 I。ff = 100 ηΑ/μιη, (110)村底 上的 PM0S器件驱动电流提高了 45%。其缺点是制作在外延层上的 PM0S器件没 有埋层氧化层将其与村底隔离， 因而器件性能还是受到影响。
鉴于此， 本发明为了进一步提升器件性能， 提出一种全包围栅 CMOS场效 应晶体管。 发明内容 本发明要解决的技术问题在于提供一种全包围栅 CMOS场效应晶体管。 为了解决上述技术问题， 本发明采用如下技术方案：
一种全包围栅 CMOS场效应晶体管， 其包括： 半导体衬底、 位于半导体衬 底之上具有第二沟道的匪 OS区域、 位于醒 0S区域之上具有第一沟道的 PM0S 区域及一个栅区域， 所述 PM0S 区域和丽 OS 区域还包括分别位于其沟道两端 的源区及漏区； 所述栅区域将所述第一沟道及第二沟道的表面完全包围； 在 所述 PMOS区域与丽 OS区域之间， 设有第一埋层绝缘层； 在所述 NM0S区域与 所述半导体村底之间， 设有第二埋层绝缘层。 其中， PM0S区域釆用 （110 ) S i 材料， NM0S区 i或采用 （ 100 ) S i材料。
本发明还提供一种全包围栅 CMOS场效应晶体管， 其包括： 半导体衬底、 位于半导体村底之上具有第一沟道的 PM0S 区域、 位于 PM0S 区域之上具有第 二沟道的丽 0S区域及一个栅区域， 所述 PM0S区域和丽 OS区域还包括分別位 于其沟道两端的源区及漏区； 所述栅区域将所述第一沟道及第二沟道的表面 完全包围； 在所述丽 0S 区域与 PM0S 区域之间， 设有第一埋层绝缘层； 在所 述 PM0S区域与所述半导体衬底之间， 设有第二埋层绝缘层。 其中， PM0S区域 采用 （110 ) S i材料， NM0S区域采用 （100 ) Si材料。
本发明的全包围栅 CMOS场效应晶体管器件结构简单、 紧凑、 集成度高。 其采用了全包围栅结构， PM0S区域和丽 OS区域纵向排布， 且均具有埋层绝缘 层将其隔离， 能有效的减少漏电流， 使器件具备更好的性能及进一步按比例 缩小的能力。 PM0S区域和丽 0S区域有针对性的采用两种不同晶向的 S i材料， 有利于进一步提高其载流子的迁移速率， 可避免多晶硅栅耗尽及短沟道效应 等。
附图说明 图 la-lc为本发明实施例一的器件结构示意图：
图 la为俯视图；
图 lb为图 la沿 XX' 的剖面图；
图 lc为图 la沿 TV 方向的剖视图。
图 Id为本发明实施例一的器件结构沟道部分的立体示意图。
图 1 e为本发明实施例一中晶体管的俯视图。
图 If 为图 le沿 XX' 的剖视图。
图 2a-2c为本发明实施例三的器件结构示意图： 图 2a为俯视图；
图 2b为图 2a沿 XX ' 的剖面图；
图 2c为图 2a沿 ZZ ' 方向的剖视图。
图 2d为本发明实施例三中晶体管的俯视图。
图 2e为图 2d沿 XX ' 的剖视图。
具体实施方式 下面结合附图进一步说明本发明的器件结构， 为了示出的方便附图并未 按照比例绘制。
实施例一
如图 la-lc所示， 本实施例中提供一种积累模式的全包围栅 CMOS场效应 晶体管包括：半导体村底 100、位于半导体衬底之上具有第二沟道 301的丽 OS 区域 300、位于 NM0S区域 300之上具有第一沟道 401的 PM0S区域 400及一个 栅区域 500 ,所述 PM0S区域 400和丽 OS区域 300还包括分别位于其沟道两端 的源区及漏区。 所述第一沟道 401及第二沟道 301横截面均大致为圓形， 优 选为沟道呈圓柱体的形状， 所述第一沟道 401优选为 p型 （ 110 ) S i材料， 所 述第二沟道 301优选为 n型（ 100 ) S i材料。 所述栅区域 500将所述第一沟道 401及第二沟道 301的表面完全包围。 在所述 PM0S区域 400与 NM0S区域 300 之间， 除了栅区域 500覆盖的区域以外， 还设有第一埋层绝缘层 201 ( BOX ) 将它们隔离， 以避免区域之间的相互干扰。 在所述丽 OS区域 300与所述半导 体衬底 100之间， 除了栅区域 500所覆盖的部分以外， 还设有第二埋层绝缘 层 202。 所述的第二埋层绝缘层 202可以将所述丽 OS区域 300与所述底层半 导体衬底 100隔离， 有效的减少漏电流， 从而提高器件性能。 PM0S区域的源 区 403及 PM0S区域的漏区 402优选为重掺杂的 p型 （ 110 ) S i材料； NM0S 区域的源区 303及 NM0S区域的漏区 302优选为 n型 （100 ) S i材料。
参看图 la， 位于下层的源漏区 303, 302平行于沟道方向（XX ' )的长度大 于位于其上层源漏区 403, 402的长度， 使下层的源漏区 303, 302暴露出来， 从而方便电极的引出。 所述的源漏区两端垂直于沟道方向的宽度大于沟道的 宽度， 即所述 PM0S区域 400和丽 OS区域 300呈中间细两端宽大的鳍形。
请继续参看图 lb lc， 所述栅区域 500包括： 将所述第一沟道 401及第 二沟道 301的表面完全包围的栅介质层 501以及将所述栅介质层 501完全包 围的栅材料层 502。 其中， 所述的栅材料层 502选自钛、 镍、 钽、 钨、 氮化钽、 氮化钨、 氮化钛、 硅化钛、 硅化钨、 硅化镍中的一种或其组合； 所述的栅介 质层 502 的材料可以是二氧化硅、 氮氧硅化合物、 碳氧硅化合物或铪基的高 介电常数材料中的一种。 另外， 所述底层半导体衬底 100为 Si衬底， 也可为 Ge Ga In等其他半导体材料。
在器件尺寸设计上， 请参看图 lc及图 Id, 所述第一沟道 401及第二沟道 301的长度 L为 10- 50nm, 其横截面的直径 d为 10- 80 所述第一埋层绝缘 层 201或第二埋层绝缘层 202的厚度均为 10- 200nm, 其材料均为二氧化硅。
上述器件结构可采用常规平面 CMOS工艺方法来制备。首先，在具有（ 100 ) 晶向和（110 )晶向的双层 S0I硅衬底上， 分别进行 n型与 p型沟道离子注入， 然后， 采用光刻与干法刻蚀， 使（100 ) Si层和（110 ) S i层分别形成中间细 两端宽大的鳍形有源区， 它们中间宽度较细的部分将作为 n型和 p型沟道； 之后， 采用緩冲二氧化硅选择性腐蚀液对所得结构进行腐蚀， 由于鳍形有源 区中间部分相对很细， 腐蚀一段时间后， 中间宽度较细的有源区部分（作为 n 型和 p 型沟道的部分） 下面的埋层绝缘层会先腐蚀掉， 使它们的周围镂空。 经过氢气氛下高温退火， 中间宽度较细的有源区部分熔融， 由于表面张力退 火后其截面由原来的方形变为圆形， 形成了圓柱体的沟道； 采用低压化学气 相沉积或原子层沉积技术生长栅介质层， 分别将两个沟道包裹起来， 接着沉 积栅材料层， 然后进行光刻和干法刻蚀形成栅极； 对鳍形有源区宽大的两端 分别进行源漏自对准离子注入， 形成源漏区。 经光刻和干法刻蚀将位于下层 的源漏区暴露出来。 在源漏区上分别制作源极、 漏极。 在上述器件结构的基 础上， 经后续半导体制造工艺即可得到完整的晶体管。 图 le为本实施例晶体 管的俯视图， 图 if 为其剖视图。 其中， 为优化器件性能， 栅极两侧还设有绝 缘体介质侧墙隔离结构 503， 其材料可以是二氧化硅、 氮化硅等。
为了进一步分析器件的性能， 本发明采用了较为精准的流体力学模型和 量子力学密度渐变模型， 考虑并应用了与掺杂以及表面粗糙有关的迁移率退 化模型进行三维技术仿真。 仿真结果表明本实施例提供的积累模式全包围栅 CMOS场效应晶体管具备许多常规鳍形场效应管器件， 在积累工作模式下， 电 流流过整个圓柱形的沟道， 具备高载流子迁移率， 低低频器件噪声， 并可避 免多晶硅栅耗尽及短沟道效应， 增大了器件的阈值电压。 亚 10腿尺寸下， 器 件的开关态电流比值大于 106， 表明器件具备良好的性能及进一步按比例缩小 的能力。
实施例二
本实施例提供一种反型模式全包围栅 CMOS场效应晶体管， 其与实施例一 的不同之处在于， 所述第一沟道为 n型 （110 ) S i材料， 所述第二沟道为！型 ( 100 ) S i材料。
通过器件仿真表明本实施例提供的反型模式全包围栅 CMOS 场效应晶体 管， 在反型工作模式下， 同样具备高载流子迁移率， 低低频器件噪声， 可避 免多晶硅栅耗尽及短沟道效应等优点。
实施例三
本发明的另一种表示形态一种积累模式全包围栅 CMOS场效应晶体管的器 件结构如图 2a-2e所示， 包括： 半导体村底 100' 、 位于半导体村底之上具有 第一沟道 401 ' 的 PM0S区域 400' 、 位于 PM0S区域 400' 之上具有第二沟道 301' 的匪 0S区域 300' 及一个栅区域 500' , 所述 PM0S区域 400' 和丽 OS 区域 300' 还包括分别位于其沟道两端的源区及漏区。 所述的第一沟道 401' 及第二沟道 301 ' 横截面均大致为圓形， 即呈圆柱体形状， 所述第一沟道 401 ' 优选为 p型 （110 ) S i材料， 所述第二沟道 30 优选为 n型 （100 ) S i材 料。 所述的栅区域 500' 将所述第一沟道 401' 及第二沟道 301 ' 的表面完全 包围。 在所述 PM0S区域 400' 与 NM0S区域 300' 之间， 除了栅区域 500' 覆 盖的区域外， 还设有第一埋层绝缘层 201' 将它们隔离， 以避免区域之间的相 互干扰。 在所述 PM0S 区域 400' 与所述半导体衬底 100' 之间， 除了栅区域 500' 所覆盖的部分以外， 还设有第二埋层绝缘层 202' 。 所述的第二埋层绝 缘层 202' 可以将所述 PM0S区域 400' 与所述底层半导体村底 10 (K 隔离，有 效的减少漏电流， 从而提高器件性能。 PM0S区域的源区 403' 及 PM0S区域的 漏区 402' 优选为重掺杂的 p型 （110 ) S i材料； NM0S区域的源区 303' 及 匪 OS区域的漏区 302' 优选为 n型 （ 100 ) S i材料。
参看图 2a， 位于下层的源漏区 403, 402平行于沟道方向（XX ' )的长度大 于位于其上层源漏区 303, 302的长度， 使下层的源漏区 403， 402暴露出来， 从而方便电极的引出。 所述源漏区两端垂直于沟道方向的宽度大于沟道宽度， 即所述 PM0S区域 400' 和 NM0S区域 300' 呈中间细两端宽大的鰭形。
请继续参看图 2b、 2c , 所述栅区域 500' 包括： 将所述第一沟道 401' 及 第二沟道 301' 的表面完全包围的栅介质层 50 以及将所述栅介质层 50 完全包围的栅材料层 502' 。 其中， 所述的栅材料层 502' 选自钛、 镍、 钽、 钨、 氮化钽、 氮化钨、 氮化钛、 硅化钛、 硅化钨、 硅化镍中的一种或其组合； 所述的栅介质层 502' 的材料可以是二氧化硅、 氮氧硅化合物、碳氧硅化合物 或铪基的高介电常数材料中的一种。 另外， 所述半导体衬底 100' 为 Si衬底， 也可为 Ge、 Ga、 In等其他半导体材料。
与实施例一的不同之处在于：丽 OS区域 300' 位于 PM0S区域 400' 之上， PM0S区域 400' 接近半导体衬底 100' ，除此之外与实施例一的其他技术方案 相同。
在图 2c所示器件结构的基 上， 经后续半导体制造工艺即可得到完整的 晶体管。 图 2d为本实施例晶体管的俯视图， 图 2e为其剖视图。 其中， 栅极 两侧还制备有绝缘体介质侧墙隔离结构 503' ， 其材料可以是二氧化硅、 氮化 硅等。
实施例四
本实施例提供一种反型模式全包围栅 CMOS场效应晶体管， 其与实施例三 的不同之处在于， 所述第一沟道为 n型 （110) Si材料， 所述第二沟道为 p型 ( 100 ) Si材料。
上述实施例仅用以说明而非限制本发明的技术方案。 任何不脱离本发明 精神和范围的技术方案均应涵盖在本发明的专利申请范围当中。

Claims

权利要求书
1. 一种全包围栅 CMOS场效应晶体管， 其特征在于， 包括： 半导体衬底、 位于半导体衬底之上具有第二沟道的 NM0S区域、 位于丽 OS区域之上 具有第一沟道的 PM0S区域及一个栅区域，所述 PM0S区域和丽 OS区域 还包括分别位于其沟道两端的源区及漏区；
所述栅区域将所述第一沟道及第二沟道的表面完全包围； 在所述 PM0S区域与丽 OS区域之间， 设有第一埋层绝缘层； 在所述丽 OS区域与所述半导体衬底之间， 设有第二埋层绝缘层。
2. 根据权利要求 1所述全包围栅 CMOS场效应晶体管，其特征在于： 所述 第一沟道为 P型（110 ) S i材料； 所述第二沟道为 n型（100 ) S i材料。
3. 根据权利要求 1所述全包围栅 CMOS场效应晶体管，其特征在于： 所述 第一沟道为 n型（ 110 ) S i材料， 所述第二沟道为 p型（ 100 ) S i材料。
4. 根据权利要求 1所述全包围栅 CMOS场效应晶体管，其特征在于： 所述 PM0S区域的源区及漏区为重掺杂的 p型（ 110 ) S i材料； 所述丽 0S区 域的源区及漏区为重掺杂的 n型 （100 ) S i材料。
5. 根据权利要求 1所述全包围栅 CMOS场效应晶体管，其特征在于： 所述 第一沟道的横截面大致为圆形。
6. 根据权利要求 1所述全包围栅 CMOS场效应晶体管，其特征在于： 所述 第二沟道的横截面大致为圆形。
7. 根据权利要求 1所述全包围栅 CMOS场效应晶体管，其特征在于： 所述 栅区域包括： 将所述第一沟道及第二沟道的表面完全包围的栅介质层 以及将所述栅介质层完全包围的栅材料层。
8. 根据权利要求 7所述全包围栅 CMOS场效应晶体管，其特征在于： 所述 的栅介质层的材料为二氧化硅、 氮氧硅化合物、 或铪基的高介电常数 材料中的一种。
9. 根据权利要求 7所述全包围栅 CMOS场效应晶体管，其特征在于： 所述 的栅材料层选自钛、 镍、 钽、 钨、 氮化钽、 氮化钨、 氮化钛、 硅化钛、 硅化钨或硅化镍中的一种或其组合。
10.根据权利要求 1所述全包围栅 CMOS场效应晶体管，其特征在于： 所述 第一和第二埋层绝缘层的材料为二氧化硅。
11.一种全包围栅 CMOS场效应晶体管， 其特征在于， 包括： 半导体村底、 位于半导体村底之上具有第一沟道的 PM0S区域、 位于 PM0S区域之上 具有第二沟道的匪 OS区域及一个栅区域，所述 PM0S区域和丽 OS区域 还包括分别位于其沟道两端的源区及漏区；
所述栅区域将所述第一沟道及第二沟道的表面完全包围； 在所述丽 OS区域与 PM0S区域之间， 设有第一埋层绝缘层； 在所述 PM0S区域与所述半导体村底之间， 设有第二埋层绝缘层。
12.根据权利要求 11所述全包围栅 CMOS场效应晶体管， 其特征在于： 所 述第一沟道为 p型 （ 110 ) S i材料； 所述第二沟道为 n型 （ 100 ) S i材 料。
13.根据权利要求 11所述全包围栅 CMOS场效应晶体管， 其特征在于： 所 述第一沟道为 n型 （110 ) S i材料， 所述第二沟道为！型 （100 ) S i材 料。
14.根据权利要求 11所述全包围栅 CMOS场效应晶体管， 其特征在于： 所 述 PM0S区域的源区及漏区为重掺杂的 p型 （110 ) S i材料； 所述丽 0S 区域的源区及漏区为重掺杂的 n型 （1 00 ) S i材料。 根据权利要求 11所述全包围栅 CMOS场效应晶体管， 其特征在于： 所 述第一沟道的横截面大致为圓形。 根据权利要求 11所述全包围栅 CMOS场效应晶体管， 其特征在于： 所 述第二沟道的横截面大致为圆形。 根据权利要求 11所述全包围栅 CMOS场效应晶体管， 其特征在于： 所 述栅区域包括： 将所述第一沟道及第二沟道的表面完全包围的栅介质 层以及将所述栅介质层完全包围的栅材料层。 根据权利要求 17所述全包围栅 CMOS场效应晶体管， 其特征在于： 所 述的栅介质层的材料为二氧化硅、 氮氧硅化合物、 或铪基的高介电常 数材料中的一种。 根据权利要求 17所述全包围栅 CMOS场效应晶体管， 其特征在于： 所 述的栅材料层选自钛、 镍、 钽、 钨、 氮化钽、 氮化钨、 氮化钛、 硅化 钛、 硅化钨或硅化镍中的一种或其组合。 根据权利要求 11所述全包围栅 CMOS场效应晶体管， 其特征在于： 所 述第一和第二埋层绝缘层的材料为二氧化硅。
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