WO2011094135A2 - High sensitivity real time profile control eddy current monitoring system - Google Patents

High sensitivity real time profile control eddy current monitoring system Download PDF

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Publication number
WO2011094135A2
WO2011094135A2 PCT/US2011/022132 US2011022132W WO2011094135A2 WO 2011094135 A2 WO2011094135 A2 WO 2011094135A2 US 2011022132 W US2011022132 W US 2011022132W WO 2011094135 A2 WO2011094135 A2 WO 2011094135A2
Authority
WO
WIPO (PCT)
Prior art keywords
prong
eddy current
polishing
platen
monitoring system
Prior art date
Application number
PCT/US2011/022132
Other languages
English (en)
French (fr)
Other versions
WO2011094135A3 (en
Inventor
Hassan G. Iravani
Kun Xu
Boguslaw A. Swedek
Yuchun Wang
Wen-Chiang Tu
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to KR1020127022646A priority Critical patent/KR20130033346A/ko
Priority to JP2012551207A priority patent/JP2013518440A/ja
Publication of WO2011094135A2 publication Critical patent/WO2011094135A2/en
Publication of WO2011094135A3 publication Critical patent/WO2011094135A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PCT/US2011/022132 2010-01-29 2011-01-21 High sensitivity real time profile control eddy current monitoring system WO2011094135A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020127022646A KR20130033346A (ko) 2010-01-29 2011-01-21 고감도 실시간 프로파일 제어 와전류 모니터링 시스템
JP2012551207A JP2013518440A (ja) 2010-01-29 2011-01-21 高感度実時間形状制御渦電流モニタシステム

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29988310P 2010-01-29 2010-01-29
US61/299,883 2010-01-29

Publications (2)

Publication Number Publication Date
WO2011094135A2 true WO2011094135A2 (en) 2011-08-04
WO2011094135A3 WO2011094135A3 (en) 2011-11-17

Family

ID=44320063

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/022132 WO2011094135A2 (en) 2010-01-29 2011-01-21 High sensitivity real time profile control eddy current monitoring system

Country Status (5)

Country Link
US (1) US20110189925A1 (ko)
JP (1) JP2013518440A (ko)
KR (1) KR20130033346A (ko)
TW (1) TW201201957A (ko)
WO (1) WO2011094135A2 (ko)

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FR2959018B1 (fr) * 2010-04-20 2012-08-31 European Aeronautic Defence & Space Co Eads France Procedes et dispositifs de mise sous contrainte d'un circuit integre
US9023667B2 (en) 2011-04-27 2015-05-05 Applied Materials, Inc. High sensitivity eddy current monitoring system
KR102014492B1 (ko) 2011-09-12 2019-08-26 어플라이드 머티어리얼스, 인코포레이티드 복합 플라스틱 부분들을 구비한 캐리어 헤드
US9418904B2 (en) 2011-11-14 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Localized CMP to improve wafer planarization
US10065288B2 (en) 2012-02-14 2018-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing (CMP) platform for local profile control
US20130210173A1 (en) * 2012-02-14 2013-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple Zone Temperature Control for CMP
US9465049B2 (en) * 2012-04-13 2016-10-11 James B. Colvin Apparatus and method for electronic sample preparation
US9067295B2 (en) 2012-07-25 2015-06-30 Applied Materials, Inc. Monitoring retaining ring thickness and pressure control
DE102012014812A1 (de) * 2012-07-26 2014-01-30 Etel S.A. Vorrichtung zum Testen von Wafern
US9205527B2 (en) 2012-11-08 2015-12-08 Applied Materials, Inc. In-situ monitoring system with monitoring of elongated region
US9281253B2 (en) * 2013-10-29 2016-03-08 Applied Materials, Inc. Determination of gain for eddy current sensor
CN105659363B (zh) * 2013-10-29 2019-05-03 应用材料公司 涡电流传感器增益的确定
US9911664B2 (en) 2014-06-23 2018-03-06 Applied Materials, Inc. Substrate features for inductive monitoring of conductive trench depth
US9754846B2 (en) 2014-06-23 2017-09-05 Applied Materials, Inc. Inductive monitoring of conductive trench depth
TW201822953A (zh) 2016-09-16 2018-07-01 美商應用材料股份有限公司 基於溝槽深度的電磁感應監控進行的過拋光
US10391610B2 (en) 2016-10-21 2019-08-27 Applied Materials, Inc. Core configuration for in-situ electromagnetic induction monitoring system
JP7227909B2 (ja) 2017-01-13 2023-02-22 アプライド マテリアルズ インコーポレイテッド インシトゥ監視からの測定値の、抵抗率に基づく調整
TWI789385B (zh) 2017-04-21 2023-01-11 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
KR20190038070A (ko) * 2017-09-29 2019-04-08 삼성전자주식회사 반도체 장치의 제조 시스템 및 반도체 장치의 제조 방법
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
TWI828706B (zh) 2018-06-20 2024-01-11 美商應用材料股份有限公司 用於原位電磁感應監控的基板摻雜補償的方法、電腦程式產品及研磨系統
KR20220123053A (ko) 2020-05-14 2022-09-05 어플라이드 머티어리얼스, 인코포레이티드 연마 동안의 인-시튜 모니터링에 사용하기 위한 신경망을 훈련시키기 위한 기법 및 연마 시스템
TWI810069B (zh) * 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
KR20220114089A (ko) 2020-06-24 2022-08-17 어플라이드 머티어리얼스, 인코포레이티드 연마 패드 마모 보상을 이용한 기판 층 두께의 결정
US11794302B2 (en) 2020-12-15 2023-10-24 Applied Materials, Inc. Compensation for slurry composition in in-situ electromagnetic inductive monitoring

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US5337015A (en) * 1993-06-14 1994-08-09 International Business Machines Corporation In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage
US20020055192A1 (en) * 2000-07-27 2002-05-09 Redeker Fred C. Chemical mechanical polishing of a metal layer with polishing rate monitoring
US7112960B2 (en) * 2003-07-31 2006-09-26 Applied Materials, Inc. Eddy current system for in-situ profile measurement
US7128803B2 (en) * 2002-06-28 2006-10-31 Lam Research Corporation Integration of sensor based metrology into semiconductor processing tools

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JP5615831B2 (ja) * 2008-11-14 2014-10-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 縁部分解能強化渦電流センサ

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US5337015A (en) * 1993-06-14 1994-08-09 International Business Machines Corporation In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage
US20020055192A1 (en) * 2000-07-27 2002-05-09 Redeker Fred C. Chemical mechanical polishing of a metal layer with polishing rate monitoring
US7128803B2 (en) * 2002-06-28 2006-10-31 Lam Research Corporation Integration of sensor based metrology into semiconductor processing tools
US7112960B2 (en) * 2003-07-31 2006-09-26 Applied Materials, Inc. Eddy current system for in-situ profile measurement

Also Published As

Publication number Publication date
WO2011094135A3 (en) 2011-11-17
KR20130033346A (ko) 2013-04-03
JP2013518440A (ja) 2013-05-20
TW201201957A (en) 2012-01-16
US20110189925A1 (en) 2011-08-04

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