WO2011091587A1 - Appareil de cellule solaire ayant fonction de modulation de la lumière - Google Patents

Appareil de cellule solaire ayant fonction de modulation de la lumière Download PDF

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Publication number
WO2011091587A1
WO2011091587A1 PCT/CN2010/070378 CN2010070378W WO2011091587A1 WO 2011091587 A1 WO2011091587 A1 WO 2011091587A1 CN 2010070378 W CN2010070378 W CN 2010070378W WO 2011091587 A1 WO2011091587 A1 WO 2011091587A1
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WIPO (PCT)
Prior art keywords
layer
solar cell
photovoltaic element
superparamagnetic
superparamagnetic layer
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PCT/CN2010/070378
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English (en)
Chinese (zh)
Inventor
徐镇
陶霖
Original Assignee
Xu Zhen
Tao Lin
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Priority to PCT/CN2010/070378 priority Critical patent/WO2011091587A1/fr
Publication of WO2011091587A1 publication Critical patent/WO2011091587A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a solar cell device, and in particular, to a solar cell device having a light-modulating function.
  • Solar cells that convert light energy into electrical energy have been widely used in power generation systems and electronic products.
  • the principle of a solar cell is that a photon enters the ruthenium substrate and is absorbed by the ruthenium substrate to transfer the energy of the photon to an electron that is originally in a bonded state (covalent bond), and thereby The electrons that were originally in the bonded state are released into free electrons.
  • Such movable electrons, as well as the holes left in the covalent bond (the holes are also movable) can cause current to flow from the solar cell.
  • the above-mentioned electrons and holes cannot be recombined, but instead are separated from the electric field at the p_n junction in the crucible substrate.
  • a ruthenium-based solar cell Since a ruthenium-based solar cell has a material property of a specific band gap, a photon whose energy is equal to or higher than the energy gap of the ruthenium-based solar cell material can be absorbed and converted into electric energy.
  • the germanium-based solar cell mainly absorbs energy in a specific wavelength band of sunlight and converts it into electric energy.
  • Even emerging solar cell materials have been developed, for example, dye-sensitized solar cells, amorphous germanium and microcrystalline germanium thin film solar cells, compound solar cells, etc., and various solar cell materials also have a specific absorption wavelength in sunlight. The characteristics of the energy of the frequency band.
  • the sun in a stacked structure The battery field has the development of pin junctions, nip junctions, tandem junctions, and mul t i-junct ions.
  • the solar cell of the above stacked structure is extremely difficult to manufacture, and the problem of excessive manufacturing cost is derived.
  • the solar cells of the above stacked structure still suffer from the impact of unused sunlight being converted into heat. Heat for all types of solar cells will reduce the conversion efficiency of solar cells. In addition, heat and unused ultraviolet light will gradually degrade its own materials for some solar cells.
  • a solar cell device having a light modulation function comprises a photovoltaic element and a super-paramagnetic layer.
  • the photovoltaic element comprises a p_n junction.
  • the p_n junction is used to convert energy in the first wavelength band of sunlight into an electrical energy.
  • the superparamagnetic layer is formed such that sunlight passes through the superparamagnetic layer and is directed toward the p-n junction. In particular, when sunlight passes through the superparamagnetic layer, energy in a second wavelength band of sunlight is modulated by the superparamagnetic layer into energy in the first wavelength band, and is converted into the pn junction into Electrical energy.
  • the superparamagnetic layer is formed of a paramagnetic material, for example, MnZn ferrite, ⁇ ferrite, NiZnCu, Ni-Fe-Mo alloy, iron-based amorphous material, iron-nickel-based amorphous Materials, cobalt-based amorphous materials, ultrafine-crystalline alloys, iron powder core materials, superconducting materials, ZnO, A1203, GaN, Ga lnN,
  • a paramagnetic material for example, MnZn ferrite, ⁇ ferrite, NiZnCu, Ni-Fe-Mo alloy, iron-based amorphous material, iron-nickel-based amorphous Materials, cobalt-based amorphous materials, ultrafine-crystalline alloys, iron powder core materials, superconducting materials, ZnO, A1203, GaN, Ga lnN,
  • the superparamagnetic layer has a pattern of a plurality of nano-scale holes or a plurality of nano-scale protrusions. Case.
  • the photovoltaic element comprises an ant i-ref lect ion layer.
  • the superparamagnetic layer is formed on the anti-reflective layer or between the anti-reflective layer and the p-n junction.
  • the solar cell device according to the present invention further comprises a focusing lens.
  • the focusing lens is disposed over the photovoltaic element.
  • the focusing lens is used to focus sunlight onto the photovoltaic element.
  • the superparamagnetic layer is formed on a smooth surface of the focusing lens
  • the solar cell device according to the present invention further comprises a transparent substrate.
  • the superparamagnetic layer is coated on the transparent substrate.
  • the transparent substrate coated with the superparamagnetic layer is attached to or disposed on the photovoltaic element.
  • a solar cell device further comprises a focusing lens and a transparent substrate.
  • the focusing lens is disposed over the photovoltaic element to focus sunlight onto the photovoltaic element.
  • the superparamagnetic layer is coated on the transparent substrate.
  • the transparent substrate coated with the superparamagnetic layer is attached to a smooth surface of one of the focusing lenses.
  • FIG. 1 is a cross-sectional view of a solar cell device in accordance with a preferred embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention. In the picture
  • the photovoltaic element further comprises an anti-reflection layer.
  • FIG. 3 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention.
  • the solar cell device further includes a focusing lens.
  • FIG. 4 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention.
  • the superparamagnetic layer is coated on the transparent substrate.
  • FIG. 5 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention. In the picture
  • the transparent substrate coated with the superparamagnetic layer is disposed on the photovoltaic element.
  • FIG. 6 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention. In the picture
  • the transparent substrate coated with the superparamagnetic layer is attached to a smooth surface of the focusing lens.
  • Figure 7 is a schematic view of the surface structure of a scanning electron microscope of a nanoporous anodized aluminum layer as a template for forming a superparamagnetic layer in an embodiment of the present invention.
  • Fig. 7 is a surface structure diagram of a scanning electron microscope of a MnZnFeO ferrite layer deposited on a nanoporous anodized aluminum layer.
  • Fig. 7C is a measurement result obtained by measuring the magnetic properties of the MnZnFeO ferrite layer by a superconducting quantum interference element.
  • Figure 7D shows the AAO/GaN/Sapphi re multilayer structure test piece and two kinds of MnZnFe.
  • Figure 8 shows the reflectance spectra of three different pore size MnZnFe ferr i te/AAO/Sapphi re multilayer structures after UV irradiation.
  • FIG. 1 there is shown a cross-sectional view of a solar cell device 1 in accordance with a preferred embodiment of the present invention.
  • the solar cell device 1 has a light modulation function.
  • the solar cell device 1 includes a photovoltaic element 1 Q and a superparamagnetic layer 12.
  • the photovoltaic element 10 includes a pn junction 102.
  • the pn junction is used to convert energy in a first wavelength band of sunlight into a power.
  • the photovoltaic element 10 can be various solar cells, for example, single crystal germanium solar cells, polycrystalline germanium solar cells, amorphous germanium and microcrystalline germanium thin film solar cells, dye-sensitized solar cells, compound solar cells, copper. Indium antimonide gallium (CIGS) solar cells, etc.
  • CIGS Indium antimonide gallium
  • the superparamagnetic layer 12 is formed such that sunlight passes through the superparamagnetic layer 12 and is directed toward the p-n junction 102.
  • energy in a second wavelength band of the sunlight is modulated by the superparamagnetic layer 12 into energy in the first wavelength band, and the pn junction is further 102 is converted into electrical energy.
  • the photovoltaic element 10 also includes an anti-reflective layer 104.
  • the superparamagnetic layer 12 is formed on the anti-reflection layer 104.
  • the photovoltaic element 10 also includes an anti-reflective layer 104.
  • the superparamagnetic layer 12 is formed between the anti-reflective layer 104 and the p-n junction 102.
  • the component symbols in Fig. 2 are the same as those in Fig. 1, that is, the structures which have been described in detail above, and their functions are also the same, and will not be described here.
  • the solar cell device 1 further includes a focus lens 14.
  • the focusing lens 14 is disposed above the photovoltaic element 10 for focusing sunlight onto the photovoltaic element 10.
  • the superparamagnetic layer 12 is formed on a smooth surface of the focus lens 14.
  • the solar cell device 1 further includes a transparent substrate 16.
  • the superparamagnetic layer 12 is coated on the transparent substrate 16.
  • the transparent substrate 16 coated with the superparamagnetic layer 12 is attached to the photovoltaic element 10.
  • the transparent substrate 16 can be made of a polymer material or a glass material.
  • the transparent substrate 16 of the coated superparamagnetic layer 12 is disposed over the photovoltaic element 10, as shown in FIG. Figure 4 and Figure 5 symbol
  • the same components in Fig. 1 are the same as those previously described, and their functions are also the same, and will not be repeated here.
  • the solar cell device 1 further includes a focusing lens 14 and a transparent substrate 16.
  • the focusing lens 14 is disposed above the photovoltaic element 10 for focusing sunlight onto the photovoltaic element 10.
  • the superparamagnetic layer 12 is coated on the transparent substrate 16.
  • the transparent substrate 16 coated with the superparamagnetic layer 12 is attached to a smooth surface of the focusing lens 14.
  • the transparent substrate 16 can be made of a polymer material or a glass material.
  • the component symbols in Fig. 6 are the same as those in Fig. 1, that is, the respective structures which have been described in detail above, and their functions are also the same, and will not be described here.
  • the superparamagnetic layer according to the present invention is a magneto-optic effect on light of a certain wavelength band in sunlight, and directly modulates the frequency (wavelength) of light in the wavelength band.
  • the superparamagnetic layer 12 is formed of a paramagnetic material (paramagnet ic mater ia l), a column, a MnZn ferrite (a column, a MnZnFeO moon granule iron (MnZnFe er ri Te) ), NiZn ferrite, NiZnCu, Ni-Fe-Mo alloy, iron-based amorphous material, iron-nickel-based amorphous material, cobalt-based amorphous material, ultrafine crystal alloy, iron powder core material, superconducting material , Zn0, A1203, GaN, GalnN, GaInP, S i02, S i 3N4, A1N, BN, Zr203, Au, Ag, Cu or Fe ⁇ , etc.
  • the superparamagnetic layer 12 has a plurality of nano-sca led ho le or a plurality of nano-scale protrusions.
  • the specific range of the aperture of the above hole or the outer diameter of the protrusion only responds to light of a specific frequency. Taking ultraviolet light to red light as an example, the outer diameter of the hole or the outer diameter of the protrusion is in the range of several tens of nanometers to several hundred nanometers.
  • the aperture of the above-mentioned hole or the outer diameter of the protrusion is fine-tuned, and the frequency of the modulated light changes.
  • the aperture of the upper hole depends on the frequency of the light to be modulated and the frequency at which the modulated light is to be obtained.
  • the superparamagnetic layer 12 has superparamagnetic properties only in a specific thickness range, and the thickness range in which superparamagnetic properties are maintained depends on the paramagnetic material forming the layer, and generally a suitable thickness ranges from several nanometers to Hundreds of nanometers. The thickness of the superparamagnetic layer 12 must also be considered to be such that the amount of incident light that does not affect sunlight is preferred.
  • the present invention further discloses that the superparamagnetic state as described above can be successfully manufactured without using a micro-developing process.
  • Floor It is to be noted that the following examples are merely illustrative of the invention and are not a complete embodiment of a solar cell device.
  • a gallium nitride layer is deposited on a sapphire substrate.
  • an aluminum layer is deposited on the gallium nitride layer by an electron sputtering process, and then the aluminum layer is anodized to form a nano-porous anodic a lumina oxide. AAO) layer.
  • the surface structure of the scanning electron microscope which is one of the AAO layers in this case, is shown in Figure 7A. It is necessary to declare that the AA0 layer is used as a template and does not need to be removed.
  • a MnZnFeO ferrite iron (MnZnFe err i te) layer was formed on the AA0 layer by an in-s i tu spinning-prec ipi tated technique.
  • the MnZnFe ferr i te is prepared by modulating 0.5 M MnC12, ZnC12, Fe203, and mixing them in a ratio of 0.5:0.5:1, and stirring uniformly.
  • Another 2M NaOH liquid can be prepared as a co-precipitation reaction, and the MnZnFe ferr i te layer can be obtained by interactive titration.
  • the surface structure of a scanning electron microscope of one of the MnZnFeO ferrite layers in this case is shown in Fig. 7B.
  • the MnZnFeO ferrite layer has nanometer-scale pores.
  • the magnetic properties of the MnZnFeO ferrite layer were measured by a superconducting quantum interference element (SQUID).
  • the measurement results are shown in Fig. 7C.
  • the measurement results shown in Fig. 7C have an increase in magnetic susceptibility, a small residual magnetic flux, and a very low coercive force, which proves that the MnZnFeO ferrite layer exhibits superparamagnetism.
  • test pieces were prepared according to the above processes, respectively: AAO/GaN/Sapphi re multilayer structure, 45MnZnFe er rite (precipitation time: 45 seconds) /AAO/GaN/Sapph ire multilayer structure and 9 ⁇ nZnFe Ferr i te (precipitation time: 90 seconds) / AAO / GaN / Sapphi re multi-layer structure.
  • a He-Cd laser of 325 was used as the excitation light source, and the energy was 3.13 eV, and the above three test pieces were excited.
  • the excited fluorescent light is collected by the lens group, and then focused into the optical language instrument, which is detected by the photomultiplier tube detector (PMT) after being separated by the grating in the spectrometer, and then the spectrum is drawn through the computer, and the result is drawn.
  • PMT photomultiplier tube detector
  • the blue peak intensity is attenuated as the MnZnFe err i te centrifugal precipitation time increases, and a secondary peak having a wavelength of about 550 nm is produced. Since the AA0 structural layer was measured by SQUID, it was confirmed to be superparamagnetic.
  • the fluorescence of the AAO/GaN/Sapphi re multilayer structure test piece was attenuated.
  • the results presented by Fig. 7D confirm that the red shift peak (secondary peak) is mainly due to the superparamagnetism of the MnZnFeO err i te layer caused by the original emission light modulation.
  • the optical properties of the modulated light for example, the wavelength of the peak, the bandwidth, etc., these optical properties can be controlled by the process to control the geometrical parameters of the nanostructure (hole or protrusion) on the MnZnFeO ferr i te layer, for example , aperture (outer diameter), arrangement, etc., to achieve the optical properties of the desired modulated light.
  • test pieces were prepared according to the above various processes, respectively: MnZnFe numbered D1
  • the above three kinds of test pieces differ in the pore size of the nanostructure on the superparamagnetic layer, which is D1 (about ten nanometers) ⁇ D2 (about several tens of nanometers) ⁇ D3 (about hundreds of nanometers).
  • the surface of the above three test pieces was irradiated with an ultraviolet laser, and the spectrum of the reflected light was measured. The results are shown in Fig. 8.
  • the MnZnFe ferr i te/AAO/Sapphi re multilayer structure As shown in Fig. 8, in the reflected light spectrum, the three test pieces of Dl, D2 and D3 all obviously caused a red shift to the ultraviolet light.
  • the D1 test piece with the smallest aperture of the nanostructure on the superparamagnetic layer has a peak of the reflected light spectrum at a wavelength of about 410 nm.
  • the D2 test piece with the second largest aperture of the nanostructure on the superparamagnetic layer has a peak of reflected light at a wavelength of about 425 nm.
  • the D3 test piece with the largest pore diameter of the nanostructure on the superparamagnetic layer has a peak of the reflected light spectrum at a wavelength of about 450 nm.
  • the results in Figure 8 are again confirmed to be controllable through the process.
  • the geometrical parameters of the nanostructures (holes or protrusions) on the superparamagnetic layer, such as the aperture (outer diameter), alignment, etc., can achieve the optical properties of the desired modulated light.
  • a solar cell device uses a superparamagnetic layer to modulate light energy in a wavelength band that is not utilized in sunlight to a wavelength band that can be converted into electrical energy by a photovoltaic element.
  • the conversion performance of the solar cell device is improved, and the heat converted by the unutilized light energy is also slowed down to cause adverse effects on the solar cell device.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un appareil de cellule solaire (1) ayant fonction de modulation de la lumière. L'appareil de cellule solaire (1) comprend un élément photovoltaïque (10) et une couche superparamagnétique (12). L'élément photovoltaïque (10) comprend une jonction p-n (102). La jonction p-n (102) est utilisée pour convertir en énergie électrique de l'énergie d'une première bande de longueurs d'onde de la lumière solaire. La couche superparamagnétique (12) est formée de manière à ce que la lumière solaire se transmet d'abord à travers la couche superparamagnétique, puis irradie la jonction p-n (102). Plus spécifiquement, lorsque la lumière solaire se transmet à travers la couche superparamagnétique (12), l'énergie d'une seconde bande de longueurs d'onde de la lumière solaire est modulée sur l'énergie de la première fréquence de longueur d'onde par la couche superparamagnétique (12).
PCT/CN2010/070378 2010-01-27 2010-01-27 Appareil de cellule solaire ayant fonction de modulation de la lumière WO2011091587A1 (fr)

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PCT/CN2010/070378 WO2011091587A1 (fr) 2010-01-27 2010-01-27 Appareil de cellule solaire ayant fonction de modulation de la lumière

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI513012B (zh) * 2014-12-02 2015-12-11 Neo Solar Power Corp 異質接面太陽能電池及其製造方法

Citations (6)

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Publication number Priority date Publication date Assignee Title
CN1325142A (zh) * 2000-05-18 2001-12-05 陈兴 增强太阳能电池发电量的方法
JP2003218367A (ja) * 2002-01-22 2003-07-31 Fuji Photo Film Co Ltd 太陽電池ユニット
CN1794475A (zh) * 2005-11-14 2006-06-28 浙江大学 在硅太阳能电池表面制备复合波长变换－减反射膜的方法
CN101022135A (zh) * 2007-02-09 2007-08-22 江苏艾德太阳能科技有限公司 硅太阳能电池减反射薄膜
WO2009006708A2 (fr) * 2007-07-09 2009-01-15 Katholieke Universiteit Leuven K.U.Leuven R & D Cellules solaires
CN101606244A (zh) * 2007-02-06 2009-12-16 日立化成工业株式会社 太阳能电池模块及太阳能电池模块用波长转换型聚光膜

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1325142A (zh) * 2000-05-18 2001-12-05 陈兴 增强太阳能电池发电量的方法
JP2003218367A (ja) * 2002-01-22 2003-07-31 Fuji Photo Film Co Ltd 太陽電池ユニット
CN1794475A (zh) * 2005-11-14 2006-06-28 浙江大学 在硅太阳能电池表面制备复合波长变换－减反射膜的方法
CN101606244A (zh) * 2007-02-06 2009-12-16 日立化成工业株式会社 太阳能电池模块及太阳能电池模块用波长转换型聚光膜
CN101022135A (zh) * 2007-02-09 2007-08-22 江苏艾德太阳能科技有限公司 硅太阳能电池减反射薄膜
WO2009006708A2 (fr) * 2007-07-09 2009-01-15 Katholieke Universiteit Leuven K.U.Leuven R & D Cellules solaires

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI513012B (zh) * 2014-12-02 2015-12-11 Neo Solar Power Corp 異質接面太陽能電池及其製造方法

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