TW201112432A - Solar cell apparatus with light-modulating function - Google Patents

Abstract

The invention provides a solar cell apparatus including a photovoltaic device and a super-paramagnetic layer. The photovoltaic device includes a p-n junction for converting sun light energy at a first wavelength into an electric energy. The super-paramagnetic layer is formed so that sun light passes through the super-paramagnetic layer and then projects towards the p-n junction. In particular, sun light energy at a second wavelength is modulated by the super-paramagnetic layer into energy at the first wavelength.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell apparatus, and in particular, to a solar cell sensor having a modulating function. [Prior Art] Solar cells that convert light energy into electrical energy have been widely used in power generation systems and electronic products. Taking a typical bismuth-based solar cell as an example, the principle of a solar cell is that photons enter and are absorbed by the ruthenium substrate to transfer the energy of the photons to electrons that are originally in a bonded state (covalent bond), and thereby The electrons that were originally in the bonded state are released into free electrons. Such movable electrons, and the holes left in the covalent bond (the holes are also movable), can cause current to flow from the solar cell. In order to contribute to this current, the above-mentioned electrons and holes cannot be recombined, but instead are separated from the electric field at the p-n junction in the crucible substrate. Since the ruthenium-based solar cell has a material characteristic of a specific band gap, a photon whose energy is equal to or higher than the energy gap of the ruthenium-based solar cell material can be absorbed and converted into electric energy. However, in practice, due to various complicated factors, the Shihji solar cell has a peak in the absorption spectrum of sunlight. That is to say, the samar-based solar cell mainly absorbs energy in a specific wavelength band of sunlight and converts it into electric energy. Even emerging solar cell materials continue to be developed, for example, dye-sensitized solar cells, amorphous germanium and microcrystalline germanium thin film solar cells, compound solar cells, etc., and various solar cell materials also have a specific wavelength for absorbing sunlight. The characteristics of the ship's energy 0

1CHENHSU/200903TW 3 201112432 In order to expand the wavelength band that solar cells can use for sunlight, there are pin junctions, nip junctions, tandem junctions, and multiple junctions in the field of stacked solar cells. -junction) development. However, the solar cells of the above stacked structure are extremely difficult to manufacture, and the problem of excessive manufacturing cost is derived. The solar cells of the above stacked structure are still subject to the impact of the use of unused sunlight to heat. Heat will reduce the conversion efficiency of solar cells for all types of solar cells. In addition, heat and unused ultraviolet light will gradually degrade its own materials for some solar cells. Therefore, one aspect of the present invention is to provide a solar power generation device having a light modulation function to convert light energy of a wavelength band not originally utilized into a photovoltaic device that can be converted into a photovoltaic device by a solar power generation device. Light energy in the wavelength band of electrical energy. SUMMARY OF THE INVENTION A solar cell device according to a preferred embodiment of the present invention comprises a photovoltaic element and a super-paramagnetic layer. The photovoltaic element comprises a p_n junction. The p_n junction is used to convert the energy in the first wavelength band of the sunlight into a power. The superparamagnetic layer is formed such that sunlight passes through the superparamagnetic layer and is directed toward the p_n junction. In particular, when sunlight passes through the superparamagnetic layer, energy in a second wavelength band of the sunlight is modulated by the superparamagnetic layer into energy in the first wavelength band, and is converted into the pn junction. Electrical energy. In practical applications, the superparamagnetic layer is formed of a paramagnetic material, for example, MnZn ferrite, NiZn ferrite, NiZnCu, Ni-Fe-Mo alloy, iron-based amorphous material, iron-based non-metallic Crystal material, Ming-based amorphous material, ultra-fine crystal alloy, iron powder core material, superconducting material, ZnO, A1203, GaN,

GalnN, GalnP, SiO2, Si3N4, AIN, BN, Zr203, Au,

4 1CHENHSU/200903TW 201112432

Ag, Cu or Fe..., etc. Further, the superparamagnetic layer has a pattern composed of a plurality of nano-scale holes or a plurality of nano-scale protrusions. In one embodiment, the photovoltaic element comprises an ami_reflecting layer. The superparamagnetic layer is formed on the anti-reflective layer or between the anti-reflective layer and the p-n junction. In another embodiment, the solar cell device according to the present invention further comprises a focusing lens. The focusing lens is disposed on the photovoltaic element. The focusing lens is used to focus sunlight onto the photovoltaic element. The superparamagnetic layer is formed on a smooth surface of one of the focusing lenses. In another embodiment, the solar cell device according to the present invention further comprises a transparent substrate. The superparamagnetic layer is coated on the transparent substrate. The transparent substrate coated with the superparamagnetic layer is attached to the light disposed on the photovoltaic element. In another embodiment, a solar cell device package in accordance with the present invention, a focusing lens and a transparent substrate. The focusing lens is disposed over the photovoltaic element for focusing sunlight onto the photovoltaic element. The = magnetic secret (four) job red. A transparent substrate of the hybrid layer is attached to a smooth surface of one of the focusing lenses. The advantages and spirit of the present invention will be further understood from the following detailed description of the invention. [Embodiment] The characteristics, spirit and advantages of the invention are described by the embodiment of recording (4). 4

4 is a cross-sectional view of a solar cell device 1 according to a preferred embodiment of the present invention. 1 CHENHSU/200903TW 5 201112432. In particular, the solar battery device 1 has a light modulation function. As shown in FIG. 1, the solar cell device 1 includes a photovoltaic element 10 and a super-compliant layer 12. The photovoltaic element 10 includes a p-n junction 102. The p-n junction is used to convert energy in a first wavelength band of sunlight into a power. In practical applications, the photovoltaic element 10 can be various solar cells, such as: single crystal germanium solar cells, polycrystalline germanium solar cells, amorphous germanium and microcrystalline germanium thin film solar cells, dye-sensitized solar cells, compound solar cells, copper germanium selenium Gallium (CIGS) solar cells, etc. The superparamagnetic layer 12 is formed such that sunlight passes through the superparamagnetic layer and is directed toward the p-n junction 102. In particular, when sunlight passes through the superparamagnetic layer 12, energy in a second wavelength band of sunlight is modulated by the superparamagnetic layer 12 into energy in the first wavelength band, and is further connected by the p_n 102 is converted into electrical energy. In a specific embodiment t, as shown in FIG. 1, the photovoltaic element 1 〇 includes an anti-reflective layer 104. The superparamagnetic layer 12 is formed on the anti-reflection layer 104. In another preferred embodiment, as shown in FIG. 2, the photovoltaic element 10 also includes an anti-reflective layer 104. The superparamagnetic layer 12 is formed between the anti-reflection layer 104 and the p-n junction 1〇2. The component symbols in Fig. 2 are the same as those in Fig. 1, that is, the structures which have been described in detail above, and their functions are also the same, and will not be described here. In another preferred embodiment, as shown in FIG. 3, the solar cell device 1 according to the present invention further includes a focus lens 14. The focusing lens 14 is disposed above the photovoltaic element 1 to focus the sunlight onto the

1CHENHSU/200903TW 6 201112432 Photovoltaic element 10 on. The superparamagnetic layer 12 is formed on one of the smooth surfaces of the focus lens 14. The component symbols in FIG. 3 are the same as those in FIG. 1, which are the various structures that have been described in detail above, and are not singularly described herein. In another preferred embodiment, FIG. 4 As shown, the solar cell device 1 according to the present invention further comprises a transparent substrate 16. The superparamagnetic layer 12 is gas on the transparent substrate π. The transparent substrate 16 coated with the superparamagnetic layer 2 is attached to the photovoltaic element 1''. In practice, the transparent substrate 16 can be made of a polymeric material or a glass material. In another & embodiment, the transparent substrate π of the coated superparamagnetic layer 12 is disposed over the photovoltaic element 10, as shown in FIG. The component symbols in Fig. 4 and Fig. 5 are the same as those in Fig. 1, that is, the respective structures which have been described in detail above, and the same applies to the same 'details' will not be repeated here. In another preferred embodiment, as shown in Fig. 6, the solar cell device 1 according to the present invention further comprises a focusing lens 14 and a transparent substrate =. The focusing lens η is disposed above the photovoltaic element 1 聚焦 for focusing sunlight onto the photovoltaic element 10. The superparamagnetic layer 12 is coated on the transparent substrate 16. The transparent substrate covering the superparamagnetic layer 12 is attached to a smooth surface of the focusing lens 14. In practice, the transparent substrate 16 can be made of a polymer material or a glass material. The component symbols in Fig. 6 are the same as those in Fig. 1, which are the structures which have been described in detail above, and their functions are also the same, and will not be described here. It should be emphasized here that the superparamagnetic layer according to the present invention causes a magneto-optical effect on light of a certain wavelength band in sunlight, and directly modulates the frequency (wavelength) of light in the wavelength band. In practical applications, the superparamagnetic layer 12 is formed of a paramagnetic material, such as MnZn ferrite (e.g., germanium).

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MnZnFeO MnZnFe ferrite), NiZn ferrite, NiZnCu,

Ni-Fe-Mo alloy, iron-based amorphous material, iron-nickel-based amorphous material, cobalt-based amorphous material, ultrafine crystal alloy, iron powder core material, superconducting material, Zn〇, Al2〇3,

GaN, GalnN, GalnP, SiO 2 , Si 3 N 4 , AIN, BN, Zr 203,

Au, Ag, Cu or Fe..., etc. Further, the superparamagnetic layer 12 has a pattern composed of a plurality of nano-scaled holes or a plurality of nano-scaled protrusions. The specific range of the aperture of the above hole or the outer diameter of the protrusion only responds to light of a specific frequency. Taking ultraviolet light to red light as an example, the aperture of the above-mentioned hole or the protrusion of the protrusion is in the range of several tens of nanometers to several hundred nanometers. In the manufacturing process +, fine-tuning the aperture of the above-mentioned hole or the outer diameter of the protrusion 'the frequency of the modulated light changes. Therefore, according to the superparamagnetic layer 12 of the present invention, the aperture of the upper hole (or the outer diameter of the protrusion 2) depends on the frequency of the light to be modulated and the frequency at which the modulated light is to be obtained. The Yan 2 Ϊ super-smooth layer 12 has only a small thickness in the voyage and has a thickness range that maintains superparamagnetic properties depending on the paramagnetic material forming the layer' - a suitable thickness range from several nanometers to several magnetic layers The thickness of 12 is also the amount of money to read the light of the sun to read Ma Jia. The method of making the miscellaneous layer can be achieved by (10) traditional casting and CVD, CVD*M0CVD', and a micro-developing process as well as a dry etching process or a wet etching process. The manufacturing also discloses a magnetic layer that can be successfully used without a micro-developing process. It is necessary to declare that the following examples are only for the specific implementation of the iis, not the complete solar cell mounted on the gallium nitride layer. The gallium nitride layer is deposited on the Christine stone substrate. Next, an aluminum layer is deposited on a dectron sputtering process.

1CHENHSU/200903TW 8 201112432 The anodized aluminum layer is then anodized to form nanoporous anodized aluminum oxide

(nano-porous anodic alumina oxide, AAO) layer. The surface structure of one of the AAO layers in this case is shown in Figure 7A. Need to declare ' ^ This AAO layer is used as a template, no need to remove. Next, a MnZaFeO MnZnFe ferrite layer was formed on the ruthenium layer by an in_situ technique. The preparation of MnZnFe ferrite is to prepare 0.5M MnC12, ZnC12, and Fe203, and mix them in a ratio of 0.5:0.5:1 and stir them evenly. Another 2M NaOH liquid is prepared as a co-precipitation reaction, which can be rotated and precipitated to obtain a ferrite layer by mutual titration. The surface structure of the scanning electron microscope of one of the MnZnFeO ferrite layers in this case is shown in Figure 7B. As shown in Fig. 7B, the MnZnFeO ferrite layer has nanometer-scale pores. The magnetic properties of the MnZnFeO ferrite layer were measured by a superconducting quantum interference element (Squid). The measurement results are shown in Figure 7c. The measurement results shown in Fig. 7C increase the magnetic susceptibility, the residual magnetism is very small, and the coercive force is very low, which is enough to prove that the MnZnFeO ferrite layer is superparamagnetic. Three test pieces were prepared according to the above processes: AAO/GaN/Sapphire multilayer structure, 45MnZnFe ferrite (precipitation time: 45 #')/AAO/GaN/Sapphire multilayer structure and 9〇MnZnFe ferrite (precipitation time: 90 seconds) /AAO/GaN/Sapphire multilayer structure. Using 325

The He-Cd laser was used as an excitation source with an energy of 313 eV to excite the above three samples. Moreover, the excited fluorescent light is collected by the lens group, and then focused into the spectrometer. After being separated by the grating in the spectrometer, it is detected by a photomultiplier tube (PMT), and then the spectrum is drawn through a computer. The result is shown in the figure. Seven, the fluorescence spectrum shown in Figure 7D's blue peak intensity decreases as the Mn7nFft ferrite centrifugal precipitation time increases, and produces a sub-peak with a wavelength of about 55 〇 nm. Since the AAO structural layer was measured by SQUID, it was confirmed to be superparamagnetic, so that the AAO/GaN/Sapphire multilayer structure test piece & fluorescence was attenuated. However, the results presented in Figure 7D confirm that the red shift peak (secondary peak) is mainly due to

1CHENHSU/200903TW 9 201112432 The superparamagnetism of the ferrite layer modulates the optical properties of the original emitted light, for example, the peak wave = " ' _ can be read and read, you see, etc. Through the process to control the geometric record of the magic 〇ferrk hole f, the optical properties of the desired modulated light are achieved by the method (4) _ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 /AAO/Sappl^ Multi-layer structure number. =n^ femte/AA0/Sapphire multi-layer structure and number m 0/Sapphire multi-layer structure. The above three kinds of test pieces differ in the hole structure i of the nanostructure on the superparamagnetic layer. In order, it is not rice;) < Df (about tens of nanometers) <£> 3 (about hundreds of nanometers). The surface of the above three test pieces is irradiated with ultraviolet light, and the reflected light is measured. The spectrum, the results are shown in Figure 8. MnZnFe ferrite / AAO / Sapphire multi-layer structure. Eight, in the reflected light spectrum, D Bu D2 and D3 three test strips all significantly red shift to ultraviolet light. Superparamagnetic layer The D1 test piece with the smallest aperture of the nanostructure has a peak of the reflected light spectrum. At the wavelength of about D (1) Cong. The D2 test piece with the second largest aperture of the nanostructure on the superparamagnetic layer has a peak of the reflected light spectrum at a wavelength of about 425 nm. The maximum pore size of the nanostructure on the superparamagnetic layer For the D3 test piece, the peak of the reflected light spectrum appears at a wavelength of about 45 〇 nm. The results in Figure 8 again confirm that the geometry of the nanostructure (hole or protrusion) on the superparamagnetic layer can be controlled by the process, for example. , aperture (outer diameter), arrangement, etc., can achieve the optical properties of the desired modulated light. Compared to the prior art 'the solar cell device according to the present invention, the superparamagnetic layer is applied to one of the wavelengths of sunlight. The light energy in the frequency band is modulated into light energy in a wavelength band that can be converted into electrical energy by the photovoltaic element. Thereby, the conversion performance of the solar cell device is improved, and the heat converted by the unutilized light energy is also slowed down, causing damage to the solar cell device. Effect.—

The 10 CHENHSU/200903TW 201112432 embodiment is intended to limit the scope of the invention: the scope of the patent scope of the tenth road. Therefore, the scope of the invention as claimed should be construed broadly so that the invention may be

11 1CHENHSU/200903TW 201112432 [Brief Description of the Drawings] Fig. 1 is a perspective view showing a solar battery device according to a preferred embodiment of the present invention. Figure 2 is a cross-sectional view showing a solar cell device in accordance with another preferred embodiment of the present invention. In Figure 2, the photovoltaic element also includes an anti-reflective layer. Figure 3 is a cross-sectional view showing a solar cell device in accordance with another preferred embodiment of the present invention. In Figure 3, the solar cell device further includes a focusing lens. Figure 4 is a diagram showing a solar cell device reading face culvert according to another preferred embodiment of the present invention. _四+, the super-smooth layer is coated on the transparent substrate. The invention relates to a solar cell according to another preferred embodiment of the present invention. The transparent cell of the superparamagnetic layer is disposed in the element. The fiber substrate of the other preferred embodiment of the present invention is super-attached. The transparent layer of the paramagnetic layer = nai: the structure of the positive hair. The surface of the electron microscope is known.

One of the granular iron layers is a bronzing electron microscope table = MnZnFeO fertilizer on the layer 1CHENHSU/200903TW 12 201112432 Fig. 7C is a measurement result obtained by measuring the magnetic properties of the MnZnFeO ferrite layer by a superconducting quantum interference element. Figure 7D shows the fluorescence spectrum of the AAO/GaN/Sapphire multilayer structure test piece and the two MnZnFe ferrite/AAO/GaN/Sapphire multilayer structure test pieces after excitation. Figure VIII shows the spectra of three different aperture MnZnFe ferrite/AAO/Sapphire multilayer structures after UV irradiation. [Main component symbol description] 1 : Solar cell device 102 : p-n junction 12 : superparamagnetic layer 10 : photovoltaic element 104 : anti-reflection layer 14 : focusing lens 16 : transparent substrate

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Claims (1)

201112432 VII. Patent application scope: 1. A solar cell apparatus comprising: a photovoltaic device [The photovoltaic element comprises a p_n junction (pn junction), the pn junction is used to convert the sun The energy in the first wavelength band of the light becomes an electric energy; and a super-paramagnetic layer is formed to cause the sunlight to pass through the superparamagnetic layer and then to the p_n a surface, wherein when sunlight passes through the superparamagnetic layer, energy in a second wavelength band of the sunlight is modulated by the superparamagnetic layer into energy in the first wavelength band. The solar cell device of claim 1, wherein the superparamagnetic layer is formed of a paramagnetic material. 3. The solar cell device according to claim 2, wherein the paramagnetic material is made of MnZn ferrite, NiZn ferrite, NiZnCu, Ni-Fe-Mo alloy, iron-based amorphous material, iron nickel. Amorphous material, cobalt-based amorphous material, ultrafine crystal alloy, iron powder core material, superconducting material, ZnO, A1203, GaN, GalnN, GalnP, SiO 2 , Si 3 N 4 , AIN, BN, Zr 203, Au, Ag, Cu And one of the groups formed by Fe. 4. The solar cell device of claim 2, wherein the superparamagnetic layer has a plurality of nano-scaled holes or a plurality of nano-scale protrusions (nano-scaled). Protrusion). 5. The solar cell device of claim 2, wherein the photovoltaic element comprises an anti-reflection layer formed on or formed on the anti-reflective layer. Between the reflective layer and the pn junction, the solar cell device of claim 2, further comprising: a focusing lens disposed on the photovoltaic element The focusing lens is for focusing sunlight onto the photovoltaic element, wherein the superparamagnetic layer is formed on a smooth surface of the focusing lens. 7. The solar cell device of claim 2, further comprising: a transparent substrate, the superparamagnetic layer is coated on the transparent substrate, and the transparent substrate coated with the superparamagnetic layer is attached to the transparent substrate The photovoltaic element is placed on or above the photovoltaic element. 8. The solar cell device of claim 2, further comprising: a focusing lens disposed on the photovoltaic element, the focusing lens for focusing sunlight onto the photovoltaic element; And a transparent substrate, the superparamagnetic layer is coated on the transparent substrate, and the transparent substrate coated with the superparamagnetic layer is attached to a smooth surface of the focusing lens. 15 1CHENHSU/200903TW