WO2011081482A2 - Manufacturing system of touch panel pad, manufacturing method thereof, and pad for manufacturing touch panel - Google Patents

Manufacturing system of touch panel pad, manufacturing method thereof, and pad for manufacturing touch panel Download PDF

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Publication number
WO2011081482A2
WO2011081482A2 PCT/KR2010/009579 KR2010009579W WO2011081482A2 WO 2011081482 A2 WO2011081482 A2 WO 2011081482A2 KR 2010009579 W KR2010009579 W KR 2010009579W WO 2011081482 A2 WO2011081482 A2 WO 2011081482A2
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WO
WIPO (PCT)
Prior art keywords
plate
material layer
touch panel
pad
conductive material
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PCT/KR2010/009579
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French (fr)
Korean (ko)
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WO2011081482A3 (en
Inventor
박종호
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Park Jong-Ho
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Application filed by Park Jong-Ho filed Critical Park Jong-Ho
Publication of WO2011081482A2 publication Critical patent/WO2011081482A2/en
Publication of WO2011081482A3 publication Critical patent/WO2011081482A3/en

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present invention relates to a pad for a touch panel, a pad manufacturing system for a touch panel, and a manufacturing method thereof, and in particular, a pad manufacturing system for forming a metal material layer on a conductive material layer constituting a pad used in a capacitive touch panel.
  • a pad manufacturing method and a touch panel pad made by the system and method.
  • Conventional capacitive touch panel is coupled to the upper portion of the upper touch pad housing made of an insulator and the window portion consisting of a screening portion that is coupled to the bottom edge of the housing to cover the silver paste electrode to be coupled to the lower portion of the housing, It consists of a pad.
  • the pad controls the electrical signal of the conductive material coating layer and the conductive material coating layer coated with a transparent conductive material, such as ITO, on a portion of the PET film that is to be touch-sensitive (a portion of the window portion that is not a screening portion). It consists of a silver paste electrode that couples to the edge of the conductive material coating layer for delivery.
  • the pad and the window portion are joined by an adhesive.
  • silver paste is added to the upper portion of the ITO layer.
  • the electrode formed by the silver paste is thick in micrometers, so that the height of the portion where the silver paste electrode is formed is higher than that of the other portion and a layer having a step is formed.
  • An object of the present invention is to provide a touch panel pad manufacturing system for forming a metal material layer on the upper surface of the conductive material layer used in the capacitive touch panel.
  • Another object of the present invention is to provide a touch panel pad manufacturing method for forming a metal material layer on an upper surface of a conductive material layer used in a capacitive touch panel.
  • Another object of the present invention is to provide a pad for a touch panel in which a metal material layer is formed on an upper surface of a conductive material layer used for a capacitive touch panel.
  • the pad manufacturing system for a touch panel for achieving the technical problem is a dielectric film having an insulating, a conductive material layer formed on the upper surface of the dielectric film and a metal formed on the upper surface of the conductive material layer
  • a pad manufacturing system for a touch panel comprising a material layer
  • the metal material forming the metal material layer is formed on the conductive material layer of the first material supplied from the supply roller by a supply roller and a DC plasma supplying the first material having the conductive material layer formed on the dielectric film.
  • the surface treatment unit generates an RF plasma using an RF (Radio Frequency) voltage, moves ions and electrons generated by the RF plasma by a magnetic field, and causes the ions and electrons to appear on the surface of the conductive material layer.
  • the surface treatment is performed so that the metal material layer is well formed by the collision.
  • the surface treatment unit may include a lower plate including an upper plate to which an RF voltage between 200 W and 450 W is applied, and a lower portion including a space portion disposed below the upper plate at a predetermined interval and having a magnetic field formed therein, and between the upper plate and the lower plate.
  • the first material passes through, and ions and electrons generated by ionization of the reaction gas collide with the surface of the conductive material layer.
  • the upper plate may include an upper electrode in which a cooling water flow path is formed, an upper electrode plate covering the upper electrode upper surface, an insulator plate surrounding upper and both sides of the upper electrode and the upper electrode plate, an upper surface of the insulator plate, and And an injection tube for injecting coolant into a passage through which the coolant flows through the first metal plate and the first metal plate, the insulator plate, and the upper electrode plate surrounding both sides.
  • the lower plate is a U-shaped cross-section that forms the space portion, the first plate and the magnet having different polarity alternately arranged inside to form a magnetic field in the space portion, disposed below the first plate and flowing coolant
  • the DC plasma part is disposed at a predetermined interval away from the main roller and the lower part of the main roller to which the first material is wound and rotated.
  • the metal material is disposed on the upper surface and a negative voltage is applied to the lower surface so that the metal material is reacted by the reaction gas.
  • a negative electrode is formed on the conductive material layer of the first material of the main roller.
  • a voltage of -2500 W to -4000 W is applied to the negative electrode, and a distance between the main roller and the negative electrode is 4 cm to 15 cm.
  • the metal material is copper, aluminum including copper, nickel, chromium, molybdenum or alloys thereof.
  • the touch panel pad manufacturing system is a vacuum chamber.
  • a method for manufacturing a pad for a touch panel the dielectric film having an insulating property, a conductive material layer formed on an upper surface of the dielectric film, and an upper surface of the conductive material layer.
  • a touch panel pad manufacturing method comprising a metal material layer,
  • an RF plasma is generated using an RF (Radio Frequency) voltage, and the ions and electrons generated on the surface of the conductive material layer are moved by a magnetic field.
  • the surface treatment is performed so that the metal material layer is well formed by the collision.
  • the surface treatment step, the top plate is applied between the RF voltage between 200W to 450W, and
  • a lower plate having a space portion disposed below the upper plate at a predetermined interval and having a magnetic field formed therein, wherein the first material passes between the upper plate and the lower plate, and ions generated by ionization of a reaction gas And electrons impinge on the surface of the conductive material layer.
  • the upper plate may include an upper electrode in which a cooling water flow path is formed, an upper electrode plate covering the upper electrode upper surface, an insulator plate surrounding upper and both sides of the upper electrode and the upper electrode plate, an upper surface of the insulator plate, and And an injection tube for injecting coolant into a passage through which the coolant flows through the first metal plate and the first metal plate, the insulator plate, and the upper electrode plate surrounding both sides.
  • the lower plate has a U-shape in cross section that forms the space portion, and magnets having different polarities are alternately disposed inside to form a magnetic field in the space portion, and the magnetic field is 3000 gauss or more, and the upper electrode is 200W to An RF (Radio Frequency) voltage between 450 W is applied, and the reaction gas is argon or a combined gas of argon and oxygen.
  • RF Radio Frequency
  • the metal material is formed by DC plasma sputtering using a DC voltage of -2500W to -4000W.
  • the metal material is copper, aluminum including copper, nickel, chromium, molybdenum or an alloy thereof.
  • the method for manufacturing a pad for touch panels operates in a vacuum chamber.
  • Touch pad pad according to another embodiment of the present invention for achieving the above technical problem is made by the above-described method for manufacturing a pad for a touch panel and a pad manufacturing system for a touch panel.
  • the pad manufacturing system for a touch panel allows the formation of a metal material layer on the conductive material layer very well, and is not possible in the silver paste electrode process, and the roll-to-roll between the supply roller and the receiving roller ( Roll to Roll) can be a continuous operation has the advantage that the productivity of the touch panel pad can be significantly improved.
  • roll-to-roll etching is possible, so that the productivity is increased by five times or more.
  • cost can be reduced compared to the silver electrode.
  • the metal electrode since the metal electrode has a very thin thickness as compared to the silver electrode, there is no step when forming on the ITO film, thus eliminating the occurrence of bubbles, which occurred between the step and the double side adhesive when providing the double side adhesive. There is an advantage to this.
  • FIG. 1 is a block diagram of a pad manufacturing system for a touch panel.
  • FIG. 2 is a perspective view illustrating a structure of the surface treatment part of FIG. 1.
  • 3 to 5 illustrate the surface treatment process.
  • FIG. 6 is a flowchart for explaining a method for manufacturing a pad for a touch panel.
  • FIG. 1 is a conceptual diagram illustrating a pad manufacturing system for a touch panel according to an embodiment of the present invention.
  • FIG. 2 is a structural diagram illustrating a structure of the surface treatment unit of FIG. 1.
  • FIG. 3 illustrates a first material entering the surface treatment unit of FIG. 1
  • FIG. 4 illustrates a first material discharged from the surface treatment unit
  • FIG. 4 illustrates a structure of a pad passing through the DC plasma unit.
  • a pad manufacturing system 100 for a touch panel may include an insulating dielectric film 10, a conductive material layer 20 formed on an upper surface of the dielectric film 10, and The present invention relates to a system for manufacturing a touch panel pad (TP) including a metal material layer 30 formed on an upper surface of a conductive material layer 20.
  • TP touch panel pad
  • the pad manufacturing system 100 for a touch panel includes a supply roller R1, a DC plasma unit 110, a receiving roller R2, and a surface treatment unit 130.
  • the pad manufacturing system 100 for a touch panel is a vacuum chamber. That is, the touch panel pad manufacturing system 100 shown in FIG. 1 is a view for explaining the inside of the vacuum chamber.
  • the touch panel pad manufacturing system 100 uses a sputtering method using a plasma method. Specifically, the metal material layer 30 is coated on the conductive material layer 20 by a DC plasma sputtering method. However, it is not easy to coat the metal material layer 30 on the conductive material layer 20 using only the sputtering method in actual manufacturing.
  • the metal material layer 30 in order to achieve a good coating of the metal material layer 30 on the surface of the conductive material layer 20, the surface of the conductive material layer 20 after the surface treatment, the metal material layer by a sputtering method ( 30) coating.
  • Surface treatment uses a plasma method using a magnetic field and RF (Radio Frequency) voltage.
  • the pad manufacturing system 100 for a touch panel is a vacuum chamber. That is, the one shown in FIG. 1 maintains a vacuum state as the interior of the vacuum chamber.
  • the dielectric film 10 is a dielectric film containing polyimide or polyethylene terephthalate (PET).
  • PET polyethylene terephthalate
  • the conductive material layer 20 is a transparent conductive material including ITO or IZO.
  • the material of the metal material layer 30 may be a variety of known metals, and preferably, in consideration of ease of manufacture and electrical conductivity, aluminum, nickel, chromium, molybdenum or the like, including copper and copper Of alloys. That is, copper, aluminum including copper, nickel, chromium, or molybdenum may be used as the material of the metal material layer 30, or two or more alloys of these metals may be used. .
  • the pad manufacturing system 100 for a touch panel includes a supply roller R1, a DC plasma unit 110, a receiving roller R2, and a surface treatment unit 130.
  • the supply roller R1 supplies the first material having the conductive material layer 20 formed on the upper surface of the dielectric film 10.
  • the surface treatment unit 130 is disposed between the supply roller R1 and the DC plasma unit 110, and the surface treatment of the conductive material layer 20 is performed to form the metal material layer 30 on the surface of the first material well. do.
  • the DC plasma unit 110 forms a metal material constituting the metal material layer 30 on the conductive material layer 20 of the first material supplied from the supply roller R1 by a DC plasma pad. TP).
  • the accommodation roller (R2) is wrapped around the touch panel pad TP discharged from the DC plasma unit 110 to accommodate.
  • auxiliary rollers 150 supporting an intermediate middle in which the touch panel pad TP is transported are illustrated, and FIG. 1 is a conceptual view, and thus, other facilities for constructing a vacuum chamber are omitted. Those skilled in the art will understand.
  • the surface-treated conductive material layer 20 After surface-treating the surface of the conductive material layer 20 using the surface treatment unit 130, the surface-treated conductive material layer 20 The metal material is coated on the surface by sputtering.
  • the first roller having the conductive material layer 20 formed on the dielectric film 10 is wound around the supply roller R1. This may be a state in which ITO is coated on PET. Then, the first material wound on the supply roller R1 is wound on the accommodation roller R2 via the surface treatment unit 130 and the DC plasma unit 110.
  • the surface treatment unit 130 is composed of an upper plate 210 to which an RF voltage is applied and a lower plate 230 having a space portion 240 disposed below the upper plate 210 at a predetermined interval and having a magnetic field formed therein. .
  • the upper plate 210 and the lower plate 230 are spaced apart from each other so that the first material passes through the surface of the conductive material layer 20 by the reaction gas and the magnetic field.
  • An interval between the upper plate 210 and the lower plate 230 may be within about 10 mm.
  • the upper plate 210 is formed of a multi-layer, the upper electrode 217 and the upper electrode plate 215 and the upper electrode 217 covering the upper surface of the upper electrode 217 is formed, the passage 219 through which the coolant flows. And an insulator plate 213 surrounding the top and both sides of the upper electrode plate 215 and a first metal plate 211 surrounding the top and both sides of the insulator plate 213.
  • an injection tube 221 is inserted into the passage 219 through which the coolant flows through the first metal plate 211, the insulator plate 213, and the upper electrode plate 215.
  • an application electrode (not shown) for applying an RF voltage to the upper electrode 217 is formed on a cover portion covering the front portion of FIG. 2.
  • the shape in which the passage of the coolant flows in the upper electrode 217 is not limited to that shown in FIG. 2.
  • the upper electrode 217 and the upper electrode plate 215 are made of aluminum and are anodized.
  • the insulator plate 213 is insulated using a Teflon material to prevent the RF plasma from flowing out.
  • the first metal plate 211 serves to protect the inner layer.
  • the lower plate 230 has a U-shape in which a cross section forms a space portion 240, and a first plate 237 in which magnets 235 having different polarities are alternately disposed inside to form a magnetic field in the space portion 240. ) And a second plate 233 disposed under the first plate 237 and surrounding the bottom and both sides of the first plate 237 and the second plate 233, through which cooling water flows. Equipped.
  • the magnets 235 shown in FIG. 2 are alternately arranged with the N pole and the S pole, and are inserted and extended inwardly as shown in FIG. 2. Although not shown, a passage through which the coolant flows may also be formed in the second plate 233, and its shape may vary.
  • the first plate 237 surrounding the magnets 235 may be made of a metal of stainless material that does not interfere with the formation of the magnetic field.
  • RF Radio Frequency
  • the magnetic field formed by the magnets 235 is preferably 3000 gauss or more.
  • argon ions and electrons alternately strike the surface of the conductive material layer 20, the surface is activated (excitation) without changing the surface resistance of the conductive material layer 20. That is, after RF plasma is generated in the surface treatment unit 130 in which argon or argon and oxygen are maintained at an appropriate ratio, the first material entering the surface treatment unit 130 moves without stopping and passes within a predetermined time.
  • the metal material layer is in close contact with the surface of the conductive material layer 20 of one material to form the metal material layer very well.
  • the surface treatment unit 130 generates an RF plasma using an RF voltage, and moves the ions and electrons generated by the RF plasma to the vicinity of the surface of the conductive material layer 20 by a magnetic field. By causing ions and electrons to collide with the surface of the surface 20, the surface of the metal material 30 is well formed.
  • the DC plasma unit 110 is disposed at regular intervals apart from the main roller MR and the lower part of the main roller MR on which the first material is wound and rotated, and a metal material 113 is disposed on the upper surface and a negative voltage is applied to the lower surface.
  • the negative electrode 111 is formed so that the metal material 113 is formed on the conductive material layer 20 of the first material of the main roller MR by the reaction gas.
  • the DC plasma unit 110 uses a sputtering method using a DC power source. That is, a voltage of -2500 W to -4000 W is applied to the negative electrode 111, and a metal material 113 (eg, copper) is disposed on an upper surface thereof.
  • the metal material 113 may be copper, aluminum including copper, nickel, chromium, molybdenum, or an alloy thereof.
  • the plasma is generated by the applied DC voltage and the ions 117 are accelerated and the accelerated ions 117 collide with the surface of the metal material 113, the atoms and molecules 115 of the metal material are held in the main roller MR. Blown to the conductive material layer 20 of the first material is rotated along to form a thin film. At this time, since the surface of the conductive material layer 20 is a surface treatment in the surface treatment unit 130, the atoms and molecules 115 of the metal material 113 are easily coated.
  • the first material is coated with the metal material layer 30 on the conductive material layer 20 to form a complete touch panel pad TP.
  • FIG. 3 illustrates a state of the first material TP1 entering the surface treatment unit 130
  • FIG. 4 illustrates a state of the first material TP2 surface treated and discharged from the surface treatment unit 130.
  • 25 is a state where the surface of the conductive material layer 20 is surface-treated by collision with ions and electrons.
  • FIG. 5 illustrates a state in which the metal material layer 30 is formed in the DC plasma unit 110 and the completed touch panel pad TP is discharged.
  • a pad TP which is a raw material used for the touch panel, may be made.
  • a method 400 for manufacturing a pad for a touch panel 400 includes forming a first material having a conductive material layer formed on an upper surface of a dielectric film, and using an RF plasma and a magnetic field to form a surface of the first material.
  • the touch panel pad is formed by forming a metal material that forms a metal material layer on the conductive material layer of the first material using step 420 and surface treatment of the conductive material layer so that the formation of the metal material layer on the substrate is performed. Step 430 is provided.
  • the surface treatment step 420 generates an RF plasma by using a RF (Radio Frequency) voltage, moves ions and electrons generated by the RF plasma by a magnetic field to move the ions onto the surface of the conductive material layer.
  • RF Radio Frequency
  • touch panel pad manufacturing method 400 corresponds to the operation of the touch panel pad manufacturing system 100 described above, a detailed description thereof will be omitted.
  • the metal material layer may be formed on the opposite side of the surface on which the metal material layer is formed, as necessary. That is, when the pad for the touch panel wound around the receiving roller R2 is turned over and then supplied to the supply roller R1, the metal material layers may be formed on both surfaces.
  • the present invention can be used in the field of manufacturing a pad for a touch panel.

Abstract

The present invention discloses a manufacturing system of a touch panel pad, a manufacturing method thereof, and a pad for manufacturing the touch panel. According to an embodiment of the invention, there is provided a manufacturing system of the touch panel pad including: a dielectric film that has insulating properties; a conductive substance layer that is formed on the upper surface of the dielectric film; and a metal substance layer that is formed on the upper surface of the conductive substance layer. The manufacturing system comprises: a supply roller that supplies a first material which has the conductive substance layer formed on the upper surface of the dielectric film; a DC plasma section that forms a metal substance, which constitutes the metal substance layer, on the conductive substance layer of the first material, which is supplied from the supply roller, by using DC plasma, and discharges the touch panel pad; a receiving roller that receives the touch panel pad which is discharged from the DC plasma section; and a surface treatment section that is disposed between the supply roller and the DC plasma section and performs surface treatment on the conductive substance layer so as to form the metal substance layer on the surface of the first material.

Description

터치패널용 패드 제조시스템, 그 제조방법 및 터치패널 제조용 패드Touch panel pad manufacturing system, manufacturing method and pad for touch panel manufacturing
본 발명은 터치패널용 패드와, 터치패널용 패드 제조시스템 및 그 제조방법에 관한 것으로서, 특히 정전용량 방식 터치패널에 이용되는 패드를 구성하는 전도성물질층 위에 금속물질층을 형성하는 패드 제조시스템과 패드 제조방법 및 상기 시스템과 방법에 의해서 만들어진 터치패널용 패드에 관한 것이다.The present invention relates to a pad for a touch panel, a pad manufacturing system for a touch panel, and a manufacturing method thereof, and in particular, a pad manufacturing system for forming a metal material layer on a conductive material layer constituting a pad used in a capacitive touch panel. A pad manufacturing method and a touch panel pad made by the system and method.
종래의 정전용량 방식 터치패널은 상부의 절연체로 이루어진 터치패드 상면 하우징과 하우징의 하면 가장자리에 결합하여 이후에 결합되는 실버페이스트 전극을 가려주는 스크리닝(SCREENING)부로 이루어지는 윈도우부와, 윈도우부의 하부에 결합하는 패드로 이루어진다.Conventional capacitive touch panel is coupled to the upper portion of the upper touch pad housing made of an insulator and the window portion consisting of a screening portion that is coupled to the bottom edge of the housing to cover the silver paste electrode to be coupled to the lower portion of the housing, It consists of a pad.
상기 패드는 PET로 이루어진 유전체 필름의 상부에 터치를 감지해야 하는 부분(상기 윈도우부에서 스크리닝부가 아닌 부분)을 ITO 등의 투명 전도성 물질로 코팅한 전도성 물질 코팅층과 전도성 물질 코팅층의 전기적 신호를 제어부로 전달하기 위하여 전도성 물질 코팅층의 가장자리에 결합하는 실버페이스트 전극으로 이루어진다. 그리고, 패드와 상기 윈도우부(상부 패널부에 해당)는 접착제에 의해서 결합된다. The pad controls the electrical signal of the conductive material coating layer and the conductive material coating layer coated with a transparent conductive material, such as ITO, on a portion of the PET film that is to be touch-sensitive (a portion of the window portion that is not a screening portion). It consists of a silver paste electrode that couples to the edge of the conductive material coating layer for delivery. The pad and the window portion (corresponding to the upper panel portion) are joined by an adhesive.
이와 같은 종래의 정전용량 방식 터치패널의 경우에는 ITO층의 상부에 실버페이스트를 부가하게 된다. In the case of the conventional capacitive touch panel, silver paste is added to the upper portion of the ITO layer.
그런데, 실버페이스트에 의해 형성되는 전극은 그 두께가 마이크로미터 단위로 두꺼워서 실버페이스트전극이 형성된 부분의 높이가 타부분에 비해서 높아지고 단차를 가지는 층이 형성된다. However, the electrode formed by the silver paste is thick in micrometers, so that the height of the portion where the silver paste electrode is formed is higher than that of the other portion and a layer having a step is formed.
이 경우 접착제층과 윈도우부를 결합하는 과정에서 접착제층과 단차 사이에 기포가 잔류하게 되어 필름의 불량이 자주 발생되는 문제점이 있으며, 터치패널의 전체 높이를 두껍게 하여 박형의 디바이스를 제작하는데 어려움이 있다.In this case, bubbles remain between the adhesive layer and the step in the process of bonding the adhesive layer and the window part, so that defects of the film are frequently caused, and it is difficult to manufacture a thin device by increasing the overall height of the touch panel. .
또한 전극형성에 있어서, 실버페이스트를 사용하게 되므로 전극의 패턴을 미세하게 꾸미는데 한계가 있어서, 높은 해상도의 터치패널을 제조하기 어려운 문제점이 있다. In addition, in forming the electrode, since the silver paste is used, there is a limit in finely decorating the electrode pattern, which makes it difficult to manufacture a touch panel of high resolution.
따라서, 실버페이스트 전극을 형성하는 것 이외에 다른 금속을 이용하여 ITO위에 전극을 형성하는 방법의 개발이 요구되고 있다.Therefore, development of a method of forming an electrode on ITO by using a metal other than forming a silver paste electrode is required.
본 발명이 이루고자 하는 기술적 과제는 정전용량방식의 터치패널에 이용되는 전도성물질층의 상면에 금속물질층을 형성하는 터치패널용 패드 제조시스템을 제공하는 데 있다. An object of the present invention is to provide a touch panel pad manufacturing system for forming a metal material layer on the upper surface of the conductive material layer used in the capacitive touch panel.
본 발명이 이루고자 하는 다른 기술적 과제는 정전용량방식의 터치패널에 이용되는 전도성물질층의 상면에 금속물질층을 형성하는 터치패널용 패드 제조방법을 제공하는 데 있다. Another object of the present invention is to provide a touch panel pad manufacturing method for forming a metal material layer on an upper surface of a conductive material layer used in a capacitive touch panel.
본 발명이 이루고자 하는 다른 기술적 과제는 정전용량방식의 터치패널에 이용되는 전도성물질층의 상면에 금속물질층이 형성된 터치패널용 패드를 제공하는 데 있다. Another object of the present invention is to provide a pad for a touch panel in which a metal material layer is formed on an upper surface of a conductive material layer used for a capacitive touch panel.
상기 기술적 과제를 달성하기 위한 본 발명의 실시예에 따른 터치패널용 패드 제조시스템은 절연성을 가지는 유전체필름과, 상기 유전체필름의 상면에 형성되는 전도성물질층 및 상기 전도성물질층의 상면에 형성되는 금속물질층으로 이루어지는 터치패널용 패드 제조시스템으로서, The pad manufacturing system for a touch panel according to an embodiment of the present invention for achieving the technical problem is a dielectric film having an insulating, a conductive material layer formed on the upper surface of the dielectric film and a metal formed on the upper surface of the conductive material layer A pad manufacturing system for a touch panel comprising a material layer,
상기 유전체필름 상면에 상기 전도성물질층이 형성된 제1재료를 공급하는 공급롤러, DC플라즈마에 의해, 상기 공급롤러에서 공급되는 상기 제1재료의 전도성물질층 위에 상기 금속물질층을 이루는 금속물질을 형성하여 상기 터치패널용 패드를 배출시키는 DC플라즈마부, 상기 DC플라즈마부에서 배출되는 상기 터치패널용 패드를 수용하는 수용롤러 및 상기 공급롤러와 상기 DC플라즈마부 사이에 배치되며, 상기 제1재료의 표면에 상기 금속물질층이 형성되도록 상기 전도성물질층의 표면처리를 하는 표면처리부를 구비한다. The metal material forming the metal material layer is formed on the conductive material layer of the first material supplied from the supply roller by a supply roller and a DC plasma supplying the first material having the conductive material layer formed on the dielectric film. A DC plasma part for discharging the pad for the touch panel, an accommodating roller for accommodating the touch panel pad discharged from the DC plasma part, and disposed between the supply roller and the DC plasma part, the surface of the first material And a surface treatment part for surface treatment of the conductive material layer so that the metal material layer is formed thereon.
상기 표면처리부는, RF(Radio Frequency)전압을 이용하여 RF플라즈마를 발생시키고, 상기 RF플라즈마에 의해서 발생된 이온들과 전자들을 자기장에 의해서 이동시켜 상기 전도성물질층의 표면에 상기 이온들과 전자들이 충돌함에 의해서 상기 금속물질층의 형성이 잘 이루어지도록 표면처리 한다. The surface treatment unit generates an RF plasma using an RF (Radio Frequency) voltage, moves ions and electrons generated by the RF plasma by a magnetic field, and causes the ions and electrons to appear on the surface of the conductive material layer. The surface treatment is performed so that the metal material layer is well formed by the collision.
상기 표면처리부는, 200W 내지 450W사이의 RF전압이 인가되는 상부판 및 상기 상부판 하부에 일정간격 떨어져서 배치되고 내측에 자기장이 형성되는 공간부를 구비하는 하부판을 구비하고, 상기 상부판과 상기 하부판 사이로 상기 제1재료가 통과하고, 반응가스의 이온화에 의해서 발생된 이온들과 전자들이 상기 전도성물질층의 표면에 충돌한다. The surface treatment unit may include a lower plate including an upper plate to which an RF voltage between 200 W and 450 W is applied, and a lower portion including a space portion disposed below the upper plate at a predetermined interval and having a magnetic field formed therein, and between the upper plate and the lower plate. The first material passes through, and ions and electrons generated by ionization of the reaction gas collide with the surface of the conductive material layer.
상기 상부판은, 내부에 냉각수가 흐르는 통로가 형성되는 상부전극, 상기 상부전극 상면을 덮는 상부전극판, 상기 상부전극과 상부전극판의 윗면 및 양측면을 둘러싸는 절연체판, 상기 절연체판의 윗면 및 양측면을 둘러싸는 제1금속판 및 상기 제1금속판과 상기 절연체판 및 상기 상부전극판을 관통하여 상기 냉각수가 흐르는 통로로 냉각수를 주입하는 주입관을 구비한다. The upper plate may include an upper electrode in which a cooling water flow path is formed, an upper electrode plate covering the upper electrode upper surface, an insulator plate surrounding upper and both sides of the upper electrode and the upper electrode plate, an upper surface of the insulator plate, and And an injection tube for injecting coolant into a passage through which the coolant flows through the first metal plate and the first metal plate, the insulator plate, and the upper electrode plate surrounding both sides.
상기 하부판은, 단면이 상기 공간부를 형성하는 U자 형상으로서, 내측에 극성이 다른 자석들이 교대로 배치되어 상기 공간부에 자기장을 형성하는 제1판, 상기 제1판 하부에 배치되며 냉각수가 흐르는 제2판 및 상기 제1판과 상기 제2판의 아랫면 및 양측면을 둘러싸는 제2금속판을 구비하며, 상기 자기장은 3000가우스 이상이며, 상기 반응가스는 아르곤 또는 아르곤과 산소의 결합가스이다.The lower plate is a U-shaped cross-section that forms the space portion, the first plate and the magnet having different polarity alternately arranged inside to form a magnetic field in the space portion, disposed below the first plate and flowing coolant A second plate and a second metal plate surrounding the lower surface and both sides of the first plate and the second plate, the magnetic field is more than 3000 gauss, the reaction gas is argon or a combined gas of argon and oxygen.
상기 DC플라즈마부는, 상기 제1재료가 감겨 회전하는 메인롤러 및 상기 메인롤러 하부에 일정간격 떨어져서 배치되며, 상면에 상기 금속물질이배치되고 하면에 음전압이 가해져서 반응가스에 의해서 상기 금속물질이 상기 메인롤러의 제1재료의 전도성물질층 위에 형성되도록 하는 음전극을 구비한다. The DC plasma part is disposed at a predetermined interval away from the main roller and the lower part of the main roller to which the first material is wound and rotated. The metal material is disposed on the upper surface and a negative voltage is applied to the lower surface so that the metal material is reacted by the reaction gas. A negative electrode is formed on the conductive material layer of the first material of the main roller.
상기 음전극에는 -2500W 내지 -4000W의 전압이 인가되며, 상기 메인롤러와 상기 음전극 사이의 간격은 4cm~15cm 이다. 상기 금속물질은, 구리, 구리를 포함한 알루미늄, 니켈, 크롬, 모리브데늄 또는 이들의 합금이다. A voltage of -2500 W to -4000 W is applied to the negative electrode, and a distance between the main roller and the negative electrode is 4 cm to 15 cm. The metal material is copper, aluminum including copper, nickel, chromium, molybdenum or alloys thereof.
상기 터치패널용 패드 제조시스템은, 진공챔버이다. The touch panel pad manufacturing system is a vacuum chamber.
상기 기술적 과제를 달성하기 위한 본 발명의 다른 실시예에 따른 터치패널용 패드 제조방법은 절연성을 가지는 유전체필름과, 상기 유전체필름의 상면에 형성되는 전도성물질층 및 상기 전도성물질층의 상면에 형성되는 금속물질층으로 이루어지는 터치패널용 패드 제조방법으로서, According to another aspect of the present invention, there is provided a method for manufacturing a pad for a touch panel, the dielectric film having an insulating property, a conductive material layer formed on an upper surface of the dielectric film, and an upper surface of the conductive material layer. A touch panel pad manufacturing method comprising a metal material layer,
상기 유전체필름 상면에 상기 전도성물질층이 형성된 제1재료를 형성하는 단계, RF플라즈마와 자기장을 이용하여, 상기 제1재료의 표면에 상기 금속물질층이 형성되도록 상기 전도성물질층의 표면처리를 하는 단계 및 DC플라즈마를 이용하여, 상기 제1재료의 전도성물질층 위에 상기 금속물질층을 이루는 금속물질을 형성하여 상기 터치패널용 패드를 형성하는 단계를 구비한다. Forming a first material having the conductive material layer formed on the dielectric film, and surface treating the conductive material layer to form the metal material layer on the surface of the first material by using an RF plasma and a magnetic field. And forming a metal material constituting the metal material layer on the conductive material layer of the first material by using the DC plasma.
상기 표면처리 단계는, RF(Radio Frequency)전압을 이용하여 RF플라즈마를 발생시키고, 상기 RF플라즈마에 의해서 발생된 이온들과 전자들을 자기장에 의해서 이동시켜 상기 전도성물질층의 표면에 상기 이온들과 전자들이 충돌함에 의해서 상기 금속물질층의 형성이 잘 이루어지도록 표면처리 한다. In the surface treatment step, an RF plasma is generated using an RF (Radio Frequency) voltage, and the ions and electrons generated on the surface of the conductive material layer are moved by a magnetic field. The surface treatment is performed so that the metal material layer is well formed by the collision.
상기 표면처리 단계는, 200W 내지 450W사이의 RF전압이 인가되는 상부판, 및The surface treatment step, the top plate is applied between the RF voltage between 200W to 450W, and
상기 상부판 하부에 일정간격 떨어져서 배치되고 내측에 자기장이 형성되는 공간부를 구비하는 하부판을 구비하고, 상기 상부판과 상기 하부판 사이로 상기 제1재료가 통과하고, 반응가스의 이온화에 의해서 발생된 이온들과 전자들이 상기 전도성물질층의 표면에 충돌한다. A lower plate having a space portion disposed below the upper plate at a predetermined interval and having a magnetic field formed therein, wherein the first material passes between the upper plate and the lower plate, and ions generated by ionization of a reaction gas And electrons impinge on the surface of the conductive material layer.
상기 상부판은, 내부에 냉각수가 흐르는 통로가 형성되는 상부전극, 상기 상부전극 상면을 덮는 상부전극판, 상기 상부전극과 상부전극판의 윗면 및 양측면을 둘러싸는 절연체판, 상기 절연체판의 윗면 및 양측면을 둘러싸는 제1금속판 및 상기 제1금속판과 상기 절연체판 및 상기 상부전극판을 관통하여 상기 냉각수가 흐르는 통로로 냉각수를 주입하는 주입관을 구비한다. The upper plate may include an upper electrode in which a cooling water flow path is formed, an upper electrode plate covering the upper electrode upper surface, an insulator plate surrounding upper and both sides of the upper electrode and the upper electrode plate, an upper surface of the insulator plate, and And an injection tube for injecting coolant into a passage through which the coolant flows through the first metal plate and the first metal plate, the insulator plate, and the upper electrode plate surrounding both sides.
상기 하부판은, 단면이 상기 공간부를 형성하는 U자 형상으로서, 내측에 극성이 다른 자석들이 교대로 배치되어 상기 공간부에 자기장을 형성하며, 상기 자기장은 3000가우스 이상이며, 상기 상부전극에는 200W 내지 450W사이의 RF(Radio Frequency)전압이 인가되고, 상기 반응가스는 아르곤 또는 아르곤과 산소의 결합가스이다. The lower plate has a U-shape in cross section that forms the space portion, and magnets having different polarities are alternately disposed inside to form a magnetic field in the space portion, and the magnetic field is 3000 gauss or more, and the upper electrode is 200W to An RF (Radio Frequency) voltage between 450 W is applied, and the reaction gas is argon or a combined gas of argon and oxygen.
상기 터치패널용 패드를 형성하는 단계는, -2500W 내지 -4000W의 DC전압을 이용하는 DC플라즈마 스퍼터링(sputtering)에 의해서 상기 금속물질이 형성된다.Forming the pad for the touch panel, the metal material is formed by DC plasma sputtering using a DC voltage of -2500W to -4000W.
상기 금속물질은, 구리, 구리를 포함한 알루미늄, 니켈, 크롬 ,몰리브데늄 또는 이들의 합금이다. The metal material is copper, aluminum including copper, nickel, chromium, molybdenum or an alloy thereof.
상기 터치패널용 패드 제조방법은, 진공챔버 내에서 동작한다. The method for manufacturing a pad for touch panels operates in a vacuum chamber.
상기 기술적 과제를 달성하기 위한 본 발명의 다른 실시예에 따른 터치패널용 패드는 상술된 터치패널용 패드 제조방법 및 터치패널용패드 제조 시스템에 의해서 만들어진다.Touch pad pad according to another embodiment of the present invention for achieving the above technical problem is made by the above-described method for manufacturing a pad for a touch panel and a pad manufacturing system for a touch panel.
상술한 바와 같이 본 발명의 실시예에 따른 터치패널용 패드 제조시스템은 전도성물질층에 금속물질층의 형성이 매우 잘 일어나도록 하며, 실버페이스트 전극공정에서 불가능한, 공급롤러에서 수용롤러 사이로 롤투롤(Roll to Roll) 연속작업이 가능하여 터치패널용 패드의 생산성이 크게 향상될 수 있는 장점이 있다. 또한, 패드제조의 후공정에서도 롤투롤(Roll to Roll) 에칭이 가능하므로 생산성이 5배이상 증가되는 장점이 있다. 그리고, 금속물질층으로 구리나 구리를 포함한 합금을 사용하므로 실버전극에 비하여 원가를 절감할 수 있는 효과가 있다. As described above, the pad manufacturing system for a touch panel according to the embodiment of the present invention allows the formation of a metal material layer on the conductive material layer very well, and is not possible in the silver paste electrode process, and the roll-to-roll between the supply roller and the receiving roller ( Roll to Roll) can be a continuous operation has the advantage that the productivity of the touch panel pad can be significantly improved. In addition, in the post-manufacturing process of the pad, roll-to-roll etching is possible, so that the productivity is increased by five times or more. In addition, since an alloy including copper or copper is used as the metal material layer, cost can be reduced compared to the silver electrode.
그리고, 실버 전극에 비하여 금속전극은 그 두께가 매우 얇아서 ITO필름위에 형성시 단차발생이 없으며, 따라서 양면접착제 부착시 기존에 단차와 양면접착제 사이에 발생하여 불량의 원인을 제공했던 기포들의 발생을 제거할 수 있는 장점이 있다. In addition, since the metal electrode has a very thin thickness as compared to the silver electrode, there is no step when forming on the ITO film, thus eliminating the occurrence of bubbles, which occurred between the step and the double side adhesive when providing the double side adhesive. There is an advantage to this.
본 발명의 상세한 설명에서 인용되는 도면을 보다 충분히 이해하기 위하여 각 도면의 간단한 설명이 제공된다. BRIEF DESCRIPTION OF THE DRAWINGS In order to better understand the drawings cited in the detailed description of the invention, a brief description of each drawing is provided.
도 1은 터치패널용 패드 제조시스템의 블록도이다. 1 is a block diagram of a pad manufacturing system for a touch panel.
도 2는 도1의 표면처리부의 구조를 설명하는 사시도이다. FIG. 2 is a perspective view illustrating a structure of the surface treatment part of FIG. 1.
도3내지 도5는 표면처리 공정을 설명하는 도면이다. 3 to 5 illustrate the surface treatment process.
도 6은 터치패널용 패드 제조 방법을 설명하는 플로우차트이다. 6 is a flowchart for explaining a method for manufacturing a pad for a touch panel.
본 발명과 본 발명의 동작상의 이점 및 본 발명의 실시에 의하여 달성되는 목적을 충분히 이해하기 위해서는 본 발명의 바람직한 실시예를 예시하는 첨부 도면 및 도면에 기재된 내용을 참조하여야 한다. DETAILED DESCRIPTION In order to fully understand the present invention, the operational advantages of the present invention, and the objects achieved by the practice of the present invention, reference should be made to the accompanying drawings which illustrate preferred embodiments of the present invention and the contents described in the drawings.
이하, 첨부한 도면을 참조하여 본 발명의 바람직한 실시예를 설명함으로써, 본 발명을 상세히 설명한다. 각 도면에 제시된 동일한 참조부호는 동일한 부재를 나타낸다. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals in the drawings denote like elements.
도1은 본 발명의 실시예에 따른 터치패널용 패드 제조시스템을 설명하는 개념도이다 1 is a conceptual diagram illustrating a pad manufacturing system for a touch panel according to an embodiment of the present invention.
도 2는 도 1의 표면처리부의 구조를 설명하는 구조도이다. FIG. 2 is a structural diagram illustrating a structure of the surface treatment unit of FIG. 1.
도 3은 도 1의 표면처리부로 들어가는 제1재료를 나타내고, 도 4는 표면처리부에서 배출되는 제1재료를 나타내며, 도4는 DC플라즈마부를 통과한 패드의 구조를 설명하는 도면이다.3 illustrates a first material entering the surface treatment unit of FIG. 1, FIG. 4 illustrates a first material discharged from the surface treatment unit, and FIG. 4 illustrates a structure of a pad passing through the DC plasma unit.
도 1을 참조하면, 본 발명의 실시예에 따른 터치패널용 패드 제조시스템(100)은 절연성을 가지는 유전체필름(10)과, 유전체필름(10)의 상면에 형성되는 전도성물질층(20)및 전도성물질층(20)의 상면에 형성되는 금속물질층(30)으로 이루어지는 터치패널용 패드(TP)의 제조시스템에 관한 것이다. Referring to FIG. 1, a pad manufacturing system 100 for a touch panel according to an exemplary embodiment of the present invention may include an insulating dielectric film 10, a conductive material layer 20 formed on an upper surface of the dielectric film 10, and The present invention relates to a system for manufacturing a touch panel pad (TP) including a metal material layer 30 formed on an upper surface of a conductive material layer 20.
터치패널용 패드 제조시스템(100)은 공급롤러(R1), DC플라즈마부(110), 수용롤러(R2) 및 표면처리부(130)를 구비한다. 터치패널용 패드 제조시스템(100)은 진공챔버이다. 즉, 도 1에 보이는 터치패널용 패드 제조시스템(100)은 진공챔버의 내부 모습을 설명하고 있는 도면이다. The pad manufacturing system 100 for a touch panel includes a supply roller R1, a DC plasma unit 110, a receiving roller R2, and a surface treatment unit 130. The pad manufacturing system 100 for a touch panel is a vacuum chamber. That is, the touch panel pad manufacturing system 100 shown in FIG. 1 is a view for explaining the inside of the vacuum chamber.
전도성물질층(20)에 금속물질층(30)을 형성하기 위해서 본 발명의 실시예에 따른 터치패널용 패드 제조시스템(100)은 플라즈마 방식을 이용한 스퍼터링(sputtering)방식을 이용한다. 구체적으로는, 금속물질층(30)을 DC플라즈마 방식의 스퍼터링 방법에 의해서 전도성물질층(20)에 코팅한다. 그러나, 실제 제조시 스퍼터링 방법만을 이용하면 전도성물질층(20)에 금속물질층(30)이 코팅되는 것이 용이하지 않다. In order to form the metal material layer 30 on the conductive material layer 20, the touch panel pad manufacturing system 100 according to the embodiment of the present invention uses a sputtering method using a plasma method. Specifically, the metal material layer 30 is coated on the conductive material layer 20 by a DC plasma sputtering method. However, it is not easy to coat the metal material layer 30 on the conductive material layer 20 using only the sputtering method in actual manufacturing.
따라서, 본 발명은 전도성물질층(20)의 표면에 금속물질층(30)의 코팅이 잘 이루어지도록 하기 위해서, 전도성물질층(20)에 표면처리를 한 후, 스퍼터링 방법에 의해서 금속물질층(30)을 코팅한다. Therefore, in order to achieve a good coating of the metal material layer 30 on the surface of the conductive material layer 20, the surface of the conductive material layer 20 after the surface treatment, the metal material layer by a sputtering method ( 30) coating.
표면처리는 자기장과 RF(Radio Frequency)전압을 이용한 플라즈마 방식을 이용한다. Surface treatment uses a plasma method using a magnetic field and RF (Radio Frequency) voltage.
터치패널용 패드 제조시스템(100)은 진공챔버이다. 즉, 도 1에 도시된 것은 진공챔버의 내부로서 진공상태를 유지한다. 또한, 바람직하게는 유전체필름(10)은 폴리이미드 또는 폴리에틸렌 테레프탈레이트(PET)를 포함하는 유전체 필름이다. 그리고, 전도성물질층(20)은 ITO 또는 IZO를 포함하는 투명 전도성 물질이다. The pad manufacturing system 100 for a touch panel is a vacuum chamber. That is, the one shown in FIG. 1 maintains a vacuum state as the interior of the vacuum chamber. Further, preferably, the dielectric film 10 is a dielectric film containing polyimide or polyethylene terephthalate (PET). The conductive material layer 20 is a transparent conductive material including ITO or IZO.
또한 금속물질층(30)의 재질로는 공지의 다양한 금속이 이에 해당할 수 있으며, 바람직하게는 제조의 용이성 및 전기전도도를 고려하여 구리, 구리를 포함한 알루미늄, 니켈, 크롬 ,몰리브데늄 또는 이들의 합금이다. 즉, 구리나, 구리를 포함한 알루미늄이나, 니켈이나, 크롬이나 ,몰리브데늄 각각이 금속물질층(30)의 재료료 이용될 수있고, 또는 이들 금속들의 둘 또는 그 이상의 합금이 이용될 수 있다. In addition, as the material of the metal material layer 30 may be a variety of known metals, and preferably, in consideration of ease of manufacture and electrical conductivity, aluminum, nickel, chromium, molybdenum or the like, including copper and copper Of alloys. That is, copper, aluminum including copper, nickel, chromium, or molybdenum may be used as the material of the metal material layer 30, or two or more alloys of these metals may be used. .
도 1을 참조하여 터치패널용 패드 제조시스템(100)의 내부구조에 대해서 좀 더 설명한다. 터치패널용 패드 제조시스템(100)은 공급롤러(R1), DC플라즈마부(110), 수용롤러(R2) 및 표면처리부(130)를 구비한다. An internal structure of the pad manufacturing system 100 for a touch panel will be described with reference to FIG. 1. The pad manufacturing system 100 for a touch panel includes a supply roller R1, a DC plasma unit 110, a receiving roller R2, and a surface treatment unit 130.
공급롤러(R1)는 유전체필름(10) 상면에 전도성물질층(20)이 형성된 제1재료를 공급한다. 표면처리부(130)는 공급롤러(R1)와 DC플라즈마부(110) 사이에 배치되며, 제1재료의 표면에 금속물질층(30)의 형성이 잘 되도록 전도성물질층(20)의 표면처리를 한다. The supply roller R1 supplies the first material having the conductive material layer 20 formed on the upper surface of the dielectric film 10. The surface treatment unit 130 is disposed between the supply roller R1 and the DC plasma unit 110, and the surface treatment of the conductive material layer 20 is performed to form the metal material layer 30 on the surface of the first material well. do.
DC플라즈마부(110)는 DC플라즈마에 의해, 공급롤러(R1)에서 공급되는 상기 제1재료의 전도성물질층(20) 위에 금속물질층(30)을 이루는 금속물질을 형성하여 터치패널용 패드(TP)를 배출시킨다. The DC plasma unit 110 forms a metal material constituting the metal material layer 30 on the conductive material layer 20 of the first material supplied from the supply roller R1 by a DC plasma pad. TP).
그리고, 수용롤러(R2)는 DC플라즈마부(110)에서 배출되는 터치패널용 패드(TP)를 감아서 수용한다. 도 1에는 터치패널용 패드(TP)가 이송되는 중간 중간을 받쳐주는 보조롤러들(150)이 도시되어 있으며, 도 1은 개념도이므로, 진공챔버를 구성하기 위한 다른 설비들에 대해서는 생략되어 있음을 당업자라면 이해할 수 있을 것이다. And, the accommodation roller (R2) is wrapped around the touch panel pad TP discharged from the DC plasma unit 110 to accommodate. In FIG. 1, auxiliary rollers 150 supporting an intermediate middle in which the touch panel pad TP is transported are illustrated, and FIG. 1 is a conceptual view, and thus, other facilities for constructing a vacuum chamber are omitted. Those skilled in the art will understand.
앞서 설명된 대로, 본 발명의 터치패널용 패드 제조시스템(100)은 전도성물질층(20)의 표면을 표면처리부(130)를 이용해서 표면처리한 후, 표면처리된 전도성물질층(20)의 표면에 스퍼터링 방식에 의해서 금속물질을 코팅시킨다. As described above, in the touch panel pad manufacturing system 100 of the present invention, after surface-treating the surface of the conductive material layer 20 using the surface treatment unit 130, the surface-treated conductive material layer 20 The metal material is coated on the surface by sputtering.
공급롤러(R1)에는 유전체필름(10)위에 전도성물질층(20)이 형성된 제1재료가 감겨져 있다. 이는 PET 위에 ITO가 코팅된 상태일 수 있다. 그리고, 공급롤러(R1)에 감겨져 있는 제1재료가 표면처리부(130)와 DC플라즈마부(110)를 거쳐서 수용롤러(R2)에 감겨진다. The first roller having the conductive material layer 20 formed on the dielectric film 10 is wound around the supply roller R1. This may be a state in which ITO is coated on PET. Then, the first material wound on the supply roller R1 is wound on the accommodation roller R2 via the surface treatment unit 130 and the DC plasma unit 110.
도 2를 참조하여, 표면처리부(130)의 구조 및 동작에 대해서 좀 더 설명한다.Referring to Figure 2, the structure and operation of the surface treatment unit 130 will be described in more detail.
표면처리부(130)는 RF전압이 인가되는 상부판(210)과 상부판(210) 하부에 일정간격 떨어져서 배치되고 내측에 자기장이 형성되는 공간부(240)를 구비하는 하부판(230)으로 구성된다. The surface treatment unit 130 is composed of an upper plate 210 to which an RF voltage is applied and a lower plate 230 having a space portion 240 disposed below the upper plate 210 at a predetermined interval and having a magnetic field formed therein. .
상부판(210)과 하부판(230)은 일정간격 떨어져 있어 그 사이로 제1재료가 통과하면서 반응가스와 자기장에 의해서 전도성물질층(20)의 표면처리가 수행된다. 상부판(210)과 하부판(230) 사이의 간격은 약 10mm 이내일 수 있다. The upper plate 210 and the lower plate 230 are spaced apart from each other so that the first material passes through the surface of the conductive material layer 20 by the reaction gas and the magnetic field. An interval between the upper plate 210 and the lower plate 230 may be within about 10 mm.
상부판(210)은 다층으로 구성되는데, 내부에 냉각수가 흐르는 통로(219)가 형성되는 상부전극(217)과, 상부전극(217) 상면을 덮는 상부전극판(215)과 상부전극(217)과 상부전극판(215)의 윗면 및 양측면을 둘러싸는 절연체판(213)과 절연체판(213)의 윗면 및 양측면을 둘러싸는 제1금속판(211)으로 구성된다. The upper plate 210 is formed of a multi-layer, the upper electrode 217 and the upper electrode plate 215 and the upper electrode 217 covering the upper surface of the upper electrode 217 is formed, the passage 219 through which the coolant flows. And an insulator plate 213 surrounding the top and both sides of the upper electrode plate 215 and a first metal plate 211 surrounding the top and both sides of the insulator plate 213.
도2에 도시된 것처럼 제1금속판(211)과 절연체판(213) 및 상부전극판(215)을 관통하여 냉각수가 흐르는 통로(219)로 냉각수를 주입하는 주입관(221)이 삽입된다. As shown in FIG. 2, an injection tube 221 is inserted into the passage 219 through which the coolant flows through the first metal plate 211, the insulator plate 213, and the upper electrode plate 215.
도 2에 도시되지 않았으나, 도 2의 전면부분을 덮는 덮개 부분에 상부전극(217)에 RF전압을 인가하는 인가전극(미도시)이 형성된다. 상부전극(217)에 냉각수가 흐르는 통로가 형성되는 모양은 도2에도시된 것에 한정되지 아니한다. Although not shown in FIG. 2, an application electrode (not shown) for applying an RF voltage to the upper electrode 217 is formed on a cover portion covering the front portion of FIG. 2. The shape in which the passage of the coolant flows in the upper electrode 217 is not limited to that shown in FIG. 2.
상부전극(217)과 상부전극판(215)은 알루미늄 재질이며, 아노다이징처리된다. 절연체판(213)은 RF플라즈마가 외부로 흘러나가지 못하도록 테프론재질을 이용해서 절연처리를 한다. 제1금속판(211)은 내층을 보호하는 기능을 한다. The upper electrode 217 and the upper electrode plate 215 are made of aluminum and are anodized. The insulator plate 213 is insulated using a Teflon material to prevent the RF plasma from flowing out. The first metal plate 211 serves to protect the inner layer.
하부판(230)은 단면이 공간부(240)를 형성하는 U자 형상으로서, 내측에 극성이 다른 자석들(235)이 교대로 배치되어 공간부(240)에 자기장을 형성하는 제1판(237)과, 제1판(237) 하부에 배치되며 냉각수가 흐르는 제2판(233) 및 제1판(237)과 제2판(233)의 아랫면 및 양측면을 둘러싸는 제2금속판(231)을 구비한다. The lower plate 230 has a U-shape in which a cross section forms a space portion 240, and a first plate 237 in which magnets 235 having different polarities are alternately disposed inside to form a magnetic field in the space portion 240. ) And a second plate 233 disposed under the first plate 237 and surrounding the bottom and both sides of the first plate 237 and the second plate 233, through which cooling water flows. Equipped.
도 2에 도시된 자석들(235)은 N극과 S극이 서로 번갈아서 배치되며, 도 2에 도시된 것처럼 내측으로 길게 삽입되어 연장된다. 도시되지 않았으나, 제2판(233)에도 냉각수가 흐르는 통로가 형성될 수 있으며 그 형상은 다양할 수 있다. 자석들(235)을 둘러싸는 제1판(237)은 자기장의 형성을 방해하지 않는 스텐레스 재질의 금속으로 이루어질 수 있다. The magnets 235 shown in FIG. 2 are alternately arranged with the N pole and the S pole, and are inserted and extended inwardly as shown in FIG. 2. Although not shown, a passage through which the coolant flows may also be formed in the second plate 233, and its shape may vary. The first plate 237 surrounding the magnets 235 may be made of a metal of stainless material that does not interfere with the formation of the magnetic field.
상부전극(217)으로 200W 내지 450W사이의 RF(Radio Frequency)전압이 인가되고, 공간부(240)로 아르곤 또는 아르곤과 산소의 결합가스가 반응가스로서 주입되면 RF플라즈마가 발생한다. RF플라즈마에 의해서 아르곤이 이온화되고, 아르곤이온과 2차전자가 발생된다. 이때, 자석들(235)에 의해서 형성되는 자기장에 의해서 2차전자들이 제1재료의 전도성물질층(20) 표면 근처로 이동하여 모이게된다. An RF (Radio Frequency) voltage between 200W and 450W is applied to the upper electrode 217, and RF plasma is generated when argon or a combined gas of argon and oxygen is injected as a reaction gas into the space part 240. Argon is ionized by RF plasma, and argon ions and secondary electrons are generated. At this time, the secondary electrons are moved and collected near the surface of the conductive material layer 20 of the first material by the magnetic field formed by the magnets 235.
따라서 전자와 아르곤 중성원자의 충돌도 증가되고 연쇄반응이 일어나며, RF전압은 극성이 계속해서 바뀌므로 아르곤이온들과 전자들이 전도성물질층(20)의 표면을 번갈아 때리면서 전도성물질층(20)의 표면처리가 수행된다. Therefore, the collision of electrons and argon neutral atoms is increased, the chain reaction occurs, and the RF voltage is continuously changed in polarity, so that the argon ions and electrons alternately hit the surface of the conductive material layer 20 and the surface of the conductive material layer 20 Processing is performed.
여기서 자석들(235)에 의해서 형성되는 자기장은 3000가우스 이상인 것이 바람직하다. 아르곤이온과 전자가 전도성물질층(20)의 표면을 번갈아 때리면 전도성물질층(20)의 표면저항은 변하지 않으면서 표면이 액티베이션(여기) 된다. 즉, 아르곤 또는 아르곤과 산소가 적절한 비율로 유지되는 표면처리부(130) 내부에서 RF 플라즈마가 발생 후 표면처리부(130) 내부에 들어간 제1재료가 정지해 있지 않고 이동하며 소정의 시간 내에 통과하면 제1재료의 전도성물질층(20)의 표면에 금속물질층이 밀착되어 금속물질층의 형성이 매우 잘 일어나게 된다. The magnetic field formed by the magnets 235 is preferably 3000 gauss or more. When argon ions and electrons alternately strike the surface of the conductive material layer 20, the surface is activated (excitation) without changing the surface resistance of the conductive material layer 20. That is, after RF plasma is generated in the surface treatment unit 130 in which argon or argon and oxygen are maintained at an appropriate ratio, the first material entering the surface treatment unit 130 moves without stopping and passes within a predetermined time. The metal material layer is in close contact with the surface of the conductive material layer 20 of one material to form the metal material layer very well.
이와 같이, 표면처리부(130)는 RF전압을 이용하여 RF플라즈마를 발생시키고, 상기 RF플라즈마에 의해서 발생된 이온들과 전자들을 자기장에 의해서 전도성물질층(20)의 표면 근처로 이동시켜 전도성물질층(20)의 표면에 이온들과 전자들이 충돌하도록 함에 의해서 금속물질층(30)의 형성이 잘 이루어지도록 표면처리를 한다.As such, the surface treatment unit 130 generates an RF plasma using an RF voltage, and moves the ions and electrons generated by the RF plasma to the vicinity of the surface of the conductive material layer 20 by a magnetic field. By causing ions and electrons to collide with the surface of the surface 20, the surface of the metal material 30 is well formed.
DC플라즈마부(110)는, 제1재료가 감겨 회전하는 메인롤러(MR) 및 메인롤러(MR) 하부에 일정간격 떨어져서 배치되며, 상면에 금속물질(113)이 배치되고 하면에 음전압이 가해져서 반응가스에 의해서 금속물질(113)이 메인롤러(MR)의 제1재료의 전도성물질층(20) 위에 형성되도록 하는 음전극(111)을 구비한다. The DC plasma unit 110 is disposed at regular intervals apart from the main roller MR and the lower part of the main roller MR on which the first material is wound and rotated, and a metal material 113 is disposed on the upper surface and a negative voltage is applied to the lower surface. The negative electrode 111 is formed so that the metal material 113 is formed on the conductive material layer 20 of the first material of the main roller MR by the reaction gas.
DC플라즈마부(110)는 DC전원을 이용한 스퍼터링(sputtering)방식을 이용한다. 즉, 음전극(111)에는 -2500W 내지 -4000W의 전압이 인가되며, 그 상면에 금속물질(113, 예를 들어 구리)이 배치된다. 여기서, 금속물질(113)은 구리, 구리를 포함한 알루미늄, 니켈, 크롬 ,몰리브데늄 또는 이들의 합금일 수 있다. 인가되는 직류전압에 의해서 플라즈마가 발생하고 이온(117)이 가속되어 가속된 이온(117)이 금속물질(113)표면과 충돌하면, 금속물질의 원자와 분자들(115)이 메인롤러(MR)를 따라 회전하고 있는 제1재료의 전도성물질층(20)로 날라가서 붙어 박막을 형성한다. 이 때, 전도성물질층(20)의 표면은 표면처리부(130)에서 표면처리가 이루어진 상태이므로 금속물질(113)의 원자와 분자들(115)이 용이하게 코팅되게 된다. The DC plasma unit 110 uses a sputtering method using a DC power source. That is, a voltage of -2500 W to -4000 W is applied to the negative electrode 111, and a metal material 113 (eg, copper) is disposed on an upper surface thereof. The metal material 113 may be copper, aluminum including copper, nickel, chromium, molybdenum, or an alloy thereof. When the plasma is generated by the applied DC voltage and the ions 117 are accelerated and the accelerated ions 117 collide with the surface of the metal material 113, the atoms and molecules 115 of the metal material are held in the main roller MR. Blown to the conductive material layer 20 of the first material is rotated along to form a thin film. At this time, since the surface of the conductive material layer 20 is a surface treatment in the surface treatment unit 130, the atoms and molecules 115 of the metal material 113 are easily coated.
바람직하기로는 제1재료는 전도성물질층(20)위에 금속물질층(30)이 코팅되어 완전한 터치패널용 패드(TP)가 형성된다.Preferably, the first material is coated with the metal material layer 30 on the conductive material layer 20 to form a complete touch panel pad TP.
도3은 표면처리부(130)로 들어가는 제1재료(TP1)의 상태를 나타내고, 도 4는 표면처리부(130)에서 표면처리되어 배출되는 제1재료(TP2)의 상태를 나타낸다. 도4에서 25로 표시된 부분은 전도성물질층(20)의 표면이 이온들과 전자들에 의해서 충돌되어 표면처리된 상태이다. 도5는 DC플라즈마부(110)에서 금속물질층(30)이 형성되어 완성된 터치패널용 패드(TP)가 배출된 상태를 설명한다. 이러한 시스템(100)에 의해서 터치패널에 이용되는 원재료 물질인 패드(TP)가 만들어질 수 있다. 3 illustrates a state of the first material TP1 entering the surface treatment unit 130, and FIG. 4 illustrates a state of the first material TP2 surface treated and discharged from the surface treatment unit 130. In FIG. 4, 25 is a state where the surface of the conductive material layer 20 is surface-treated by collision with ions and electrons. FIG. 5 illustrates a state in which the metal material layer 30 is formed in the DC plasma unit 110 and the completed touch panel pad TP is discharged. By the system 100, a pad TP, which is a raw material used for the touch panel, may be made.
본발명의 다른 실시예에 따른 터치패널용 패드 제조방법(400)은 유전체필름 상면에 전도성물질층이 형성된 제1재료를 형성하는 410 단계와, RF플라즈마와 자기장을 이용하여, 제1재료의 표면에 금속물질층의 형성이 잘 되도록 전도성물질층의 표면처리를 하는 420단계 및 DC플라즈마를 이용하여 제1재료의 전도성물질층 위에 금속물질층을 이루는 금속물질을 형성하여 상기 터치패널용 패드를 형성하는 430단계를 구비한다. 특히, 표면처리하는 420 단계는, RF(Radio Frequency)전압을 이용하여 RF플라즈마를 발생시키고, 상기 RF플라즈마에 의해서 발생된 이온들과 전자들을 자기장에 의해서 이동시켜 상기 전도성물질층의 표면에 상기 이온들과 전자들이 충돌함에 의해서 상기 금속물질층의 형성이 잘 이루어지도록 하는 과정이다. According to another aspect of the present invention, a method 400 for manufacturing a pad for a touch panel 400 includes forming a first material having a conductive material layer formed on an upper surface of a dielectric film, and using an RF plasma and a magnetic field to form a surface of the first material. The touch panel pad is formed by forming a metal material that forms a metal material layer on the conductive material layer of the first material using step 420 and surface treatment of the conductive material layer so that the formation of the metal material layer on the substrate is performed. Step 430 is provided. In particular, the surface treatment step 420 generates an RF plasma by using a RF (Radio Frequency) voltage, moves ions and electrons generated by the RF plasma by a magnetic field to move the ions onto the surface of the conductive material layer. The formation of the metal material layer is well performed by collision of electrons and electrons.
이와 같은 터치패널용 패드 제조방법(400)은 앞서 설명된 터치패널용 패드 제조 시스템(100)의 동작에 대응되므로, 그 상세한 설명을 생략한다. Since the touch panel pad manufacturing method 400 corresponds to the operation of the touch panel pad manufacturing system 100 described above, a detailed description thereof will be omitted.
또한, 한쪽 면에 금속물질층이 모두 형성되어 수용롤러(R2)에 감긴 경우, 필요에 따라서 금속물질층이 형성된 면의 반대면에도 금속물질층이 형성될 수 있도록 할 수 있다. 즉, 수용롤러(R2)에 감긴 터치패널용 패드를 뒤집어서 다시 공급롤러(R1)로 공급할 경우, 양면에 모두 금속물질층이 형성될 수 있다. In addition, when all of the metal material layers are formed on one side and wound on the receiving roller R2, the metal material layer may be formed on the opposite side of the surface on which the metal material layer is formed, as necessary. That is, when the pad for the touch panel wound around the receiving roller R2 is turned over and then supplied to the supply roller R1, the metal material layers may be formed on both surfaces.
이상에서와 같이 도면과 명세서에서 최적 실시예가 개시되었다. 여기서 특정한 용어들이 사용되었으나, 이는 단지 본 발명을 설명하기 위한 목적에서 사용된 것이지 의미한정이나 특허청구범위에 기재된 본 발명의 범위를 제한하기 위하여 사용된 것은 아니다. 그러므로 본 기술분야의 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 따라서, 본 발명의 진정한 기술적 보호범위는 첨부된 특허청구범위의 기술적 사상에 의해 정해져야 할 것이다. As described above, optimal embodiments have been disclosed in the drawings and the specification. Although specific terms have been used herein, they are used only for the purpose of describing the present invention and are not intended to limit the scope of the invention as defined in the claims or the claims. Therefore, those skilled in the art will understand that various modifications and equivalent other embodiments are possible from this. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.
본 발명은 터치패널용 패드의 제조분야에 이용될 수 있다. The present invention can be used in the field of manufacturing a pad for a touch panel.

Claims (19)

  1. 절연성을 가지는 유전체필름과, 상기 유전체필름의 상면에 형성되는 전도성물질층 및 상기 전도성물질층의 상면에 형성되는 금속물질층으로 이루어지는 터치패널용 패드 제조시스템에 있어서, In the pad manufacturing system for a touch panel comprising an insulating dielectric film, a conductive material layer formed on the upper surface of the dielectric film and a metal material layer formed on the upper surface of the conductive material layer,
    상기 유전체필름 상면에 상기 전도성물질층이 형성된 제1재료를 공급하는 공급롤러 ;A supply roller for supplying a first material having the conductive material layer formed on the dielectric film;
    DC플라즈마에 의해, 상기 공급롤러에서 공급되는 상기 제1재료의 전도성물질층 위에 상기 금속물질층을 이루는 금속물질을 형성하여 상기 터치패널용 패드를 배출시키는 DC플라즈마부 ;A DC plasma part which forms a metal material constituting the metal material layer on the conductive material layer of the first material supplied from the supply roller by DC plasma to discharge the pad for the touch panel;
    상기 DC플라즈마부에서 배출되는 상기 터치패널용 패드를 수용하는 수용롤러 ; 및An accommodation roller accommodating the touch panel pad discharged from the DC plasma portion; And
    상기 공급롤러와 상기 DC플라즈마부 사이에 배치되며, 상기 제1재료의 표면에 상기 금속물질층이 형성되도록 상기 전도성물질층의 표면처리를 하는 표면처리부를 구비하는 것을 특징으로 하는 터치패널용 패드 제조시스템. The touch panel pad is disposed between the supply roller and the DC plasma unit, and includes a surface treatment unit for surface treatment of the conductive material layer to form the metal material layer on the surface of the first material. system.
  2. 제 1 항에 있어서, 상기 표면처리부는,The method of claim 1, wherein the surface treatment unit,
    RF(Radio Frequency)전압을 이용하여 RF플라즈마를 발생시키고, 상기 RF플라즈마에 의해서 발생된 이온들과 전자들을 자기장에 의해서 이동시켜 상기 전도성물질층의 표면에 상기 이온들과 전자들이 충돌함에 의해서 상기 금속물질층의 형성이 잘 이루어지도록 표면처리 하는 것을 특징으로 하는 터치패널용 패드 제조시스템. The metal is generated by generating an RF plasma using an RF (Radio Frequency) voltage, and moving the ions and electrons generated by the RF plasma by a magnetic field to collide with the ions and electrons on the surface of the conductive material layer. The touch panel pad manufacturing system, characterized in that the surface treatment to form the material layer well.
  3. 제 1 항에 있어서, 상기 표면처리부는,The method of claim 1, wherein the surface treatment unit,
    200W 내지 450W사이의 RF전압이 인가되는 상부판 ; 및An upper plate to which an RF voltage between 200 W and 450 W is applied; And
    상기 상부판 하부에 일정간격 떨어져서 배치되고 내측에 자기장이 형성되는 공간부를 구비하는 하부판을 구비하고, A lower plate disposed below the upper plate at a predetermined interval and having a space portion in which a magnetic field is formed;
    상기 상부판과 상기 하부판 사이로 상기 제1재료가 통과하고, 반응가스의 이온화에 의해서 발생된 이온들과 전자들이 상기 전도성물질층의 표면에 충돌하는 것을 특징으로 하는 터치패널용 패드 제조시스템. And the first material passes between the upper plate and the lower plate, and ions and electrons generated by ionization of a reaction gas collide with the surface of the conductive material layer.
  4. 제 3항에 있어서, 상기 상부판은,The method of claim 3, wherein the top plate,
    내부에 냉각수가 흐르는 통로가 형성되는 상부전극 ;An upper electrode through which a coolant flows;
    상기 상부전극 상면을 덮는 상부전극판 ;An upper electrode plate covering an upper surface of the upper electrode;
    상기 상부전극과 상부전극판의 윗면 및 양측면을 둘러싸는 절연체판; An insulator plate surrounding upper and both side surfaces of the upper electrode and the upper electrode plate;
    상기 절연체판의 윗면 및 양측면을 둘러싸는 제1금속판 : 및A first metal plate surrounding the top and both sides of the insulator plate; and
    상기 제1금속판과 상기 절연체판 및 상기 상부전극판을 관통하여 상기 냉각수가 흐르는 통로로 냉각수를 주입하는 주입관을 구비하는 것을 특징으로 하는 터치패널용 패드 제조시스템.And an injection tube for injecting coolant into a passage through which the coolant flows through the first metal plate, the insulator plate, and the upper electrode plate.
  5. 제 3항에 있어서, 상기 하부판은, The method of claim 3, wherein the lower plate,
    단면이 상기 공간부를 형성하는 U자 형상으로서, 내측에 극성이 다른 자석들이 교대로 배치되어 상기 공간부에 자기장을 형성하는 제1판 ;A first plate having a U-shaped cross section that forms the space portion, the magnets having different polarities alternately arranged inside thereof to form a magnetic field in the space portion;
    상기 제1판 하부에 배치되며 냉각수가 흐르는 제2판 ; 및 A second plate disposed under the first plate and flowing with cooling water; And
    상기 제1판과 상기 제2판의 아랫면 및 양측면을 둘러싸는 제2금속판을 구비하며, A second metal plate surrounding the lower surface and both side surfaces of the first plate and the second plate;
    상기 자기장은 3000가우스 이상이며, The magnetic field is more than 3000 gauss,
    상기 반응가스는 아르곤 또는 아르곤과 산소의 결합가스인 것을 특징으로 하는 터치패널용 패드 제조시스템. The reaction gas is argon or a pad manufacturing system for a touch panel, characterized in that the combined gas of argon and oxygen.
  6. 제 1항에 있어서, 상기 DC플라즈마부는,The method of claim 1, wherein the DC plasma unit,
    상기 제1재료가 감겨 회전하는 메인롤러 ; 및A main roller on which the first material is wound and rotated; And
    상기 메인롤러 하부에 일정간격 떨어져서 배치되며, 상면에 상기 금속물질이배치되고 하면에 음전압이 가해져서 반응가스에 의해서 상기 금속물질이 상기 메인롤러의 제1재료의 전도성물질층 위에 형성되도록 하는 음전극을 구비하는 것을 특징으로 하는 터치패널용 패드 제조시스템. The negative electrode is disposed below the main roller at a predetermined interval, the metal material is disposed on the upper surface and a negative voltage is applied to the lower surface so that the metal material is formed on the conductive material layer of the first material of the main roller by the reaction gas. Pad manufacturing system for a touch panel comprising: a.
  7. 제 6항에 있어서, 상기 음전극에는 -2500W 내지 -4000W의 전압이 인가되며, According to claim 6, wherein the negative electrode is applied a voltage of -2500W to -4000W,
    상기 메인롤러와 상기 음전극 사이의 간격은 4cm~15cm 인 것을 특징으로 하는 터치패널용 패드 제조시스템. The distance between the main roller and the negative electrode is a pad manufacturing system for a touch panel, characterized in that 4cm ~ 15cm.
  8. 제 1항에 있어서, 상기 금속물질은,The method of claim 1, wherein the metal material,
    구리, 구리를 포함한 알루미늄, 니켈, 크롬, 모리브데늄 또는 이들의 합금인 것을 하는 특징으로 하는 터치패널용 패드 제조시스템. Copper, copper containing aluminum, nickel, chromium, molybdenum or an alloy thereof.
  9. 제 1항에 있어서, 상기 터치패널용 패드 제조시스템은, According to claim 1, wherein the pad manufacturing system for a touch panel,
    진공챔버인 것을 특징으로 하는 터치패널용 패드 제조시스템. Touch panel pad manufacturing system, characterized in that the vacuum chamber.
  10. 제1항의 시스템에 의해서 만들어진 상기 터치패널용 패드. The touch panel pad made by the system of claim 1.
  11. 절연성을 가지는 유전체필름과, 상기 유전체필름의 상면에 형성되는 전도성물질층 및 상기 전도성물질층의 상면에 형성되는 금속물질층으로 이루어지는 터치패널용 패드 제조방법에 있어서, In the method of manufacturing a pad for a touch panel comprising an insulating dielectric film, a conductive material layer formed on an upper surface of the dielectric film and a metal material layer formed on an upper surface of the conductive material layer,
    상기 유전체필름 상면에 상기 전도성물질층이 형성된 제1재료를 형성하는 단계 ; Forming a first material having the conductive material layer formed on an upper surface of the dielectric film;
    RF플라즈마와 자기장을 이용하여, 상기 제1재료의 표면에 상기 금속물질층이 형성되도록 상기 전도성물질층의 표면처리를 하는 단계 ; 및 Surface treatment of the conductive material layer to form the metal material layer on the surface of the first material by using an RF plasma and a magnetic field; And
    DC플라즈마를 이용하여, 상기 제1재료의 전도성물질층 위에 상기 금속물질층을 이루는 금속물질을 형성하여 상기 터치패널용 패드를 형성하는 단계를 구비하는 것을 특징으로 하는 터치패널용 패드 제조방법.And forming a pad for the touch panel by forming a metal material constituting the metal material layer on the conductive material layer of the first material by using a DC plasma.
  12. 제 11 항에 있어서, 상기 표면처리 단계는,The method of claim 11, wherein the surface treatment step,
    RF(Radio Frequency)전압을 이용하여 RF플라즈마를 발생시키고, 상기 RF플라즈마에 의해서 발생된 이온들과 전자들을 자기장에 의해서 이동시켜 상기 전도성물질층의 표면에 상기 이온들과 전자들이 충돌함에 의해서 상기 금속물질층의 형성이 잘 이루어지도록 표면처리 하는 것을 특징으로 하는 터치패널용 패드 제조방법. The metal is generated by generating an RF plasma using an RF (Radio Frequency) voltage, and moving the ions and electrons generated by the RF plasma by a magnetic field to collide with the ions and electrons on the surface of the conductive material layer. Method of manufacturing a pad for a touch panel, characterized in that the surface treatment so as to form a material layer well.
  13. 제11항에 있어서, 상기 표면처리 단계는,The method of claim 11, wherein the surface treatment step,
    200W 내지 450W사이의 RF전압이 인가되는 상부판 ; 및An upper plate to which an RF voltage between 200 W and 450 W is applied; And
    상기 상부판 하부에 일정간격 떨어져서 배치되고 내측에 자기장이 형성되는 공간부를 구비하는 하부판을 구비하고, A lower plate disposed below the upper plate at a predetermined interval and having a space portion in which a magnetic field is formed;
    상기 상부판과 상기 하부판 사이로 상기 제1재료가 통과하고, 반응가스의 이온화에 의해서 발생된 이온들과 전자들이 상기 전도성물질층의 표면에 충돌하는 것을 특징으로 하는 터치패널용 패드 제조방법.And the first material passes between the upper plate and the lower plate, and ions and electrons generated by ionization of a reaction gas collide with the surface of the conductive material layer.
  14. 제 13항에 있어서, 상기 상부판은,The method of claim 13, wherein the top plate,
    내부에 냉각수가 흐르는 통로가 형성되는 상부전극 ;An upper electrode through which a coolant flows;
    상기 상부전극 상면을 덮는 상부전극판 ;An upper electrode plate covering an upper surface of the upper electrode;
    상기 상부전극과 상부전극판의 윗면 및 양측면을 둘러싸는 절연체판; An insulator plate surrounding upper and both side surfaces of the upper electrode and the upper electrode plate;
    상기 절연체판의 윗면 및 양측면을 둘러싸는 제1금속판 : 및A first metal plate surrounding the top and both sides of the insulator plate; and
    상기 제1금속판과 상기 절연체판 및 상기 상부전극판을 관통하여 상기 냉각수가 흐르는 통로로 냉각수를 주입하는 주입관을 구비하는 것을 특징으로 하는 터치패널용 패드 제조방법.And an injection tube for injecting coolant into a passage through which the coolant flows through the first metal plate, the insulator plate, and the upper electrode plate.
  15. 제 14 항에 있어서, 상기 하부판은,The method of claim 14, wherein the lower plate,
    단면이 상기 공간부를 형성하는 U자 형상으로서, 내측에 극성이 다른 자석들이 교대로 배치되어 상기 공간부에 자기장을 형성하며, A cross-section is a U-shape to form the space portion, magnets of different polarities are alternately arranged inside to form a magnetic field in the space portion,
    상기 자기장은 3000가우스 이상이며, The magnetic field is more than 3000 gauss,
    상기 상부전극에는 200W 내지 450W사이의 RF(Radio Frequency)전압이 인가되고,RF (Radio Frequency) voltage between 200W and 450W is applied to the upper electrode,
    상기 반응가스는 아르곤 또는 아르곤과 산소의 결합가스인 것을 특징으로 하는 터치패널용 패드 제조방법. The reaction gas is argon or a pad manufacturing method for a touch panel, characterized in that the combined gas of argon and oxygen.
  16. 제 11항에 있어서, 상기 터치패널용 패드를 형성하는 단계는,The method of claim 11, wherein forming the pad for the touch panel comprises:
    -2500W 내지 -4000W의 DC전압을 이용하는 DC플라즈마 스퍼터링(sputtering)에 의해서 상기 금속물질이 형성되는 것을 특징으로 하는 터치패널용 패드 제조방법. The metal panel is formed by the DC plasma sputtering (sputtering) using a DC voltage of -2500W to -4000W.
  17. 제 11항에 있어서, 상기 금속물질은,The method of claim 11, wherein the metal material,
    구리, 구리를 포함한 알루미늄, 니켈, 크롬 ,몰리브데늄 또는 이들의 합금인 것을 하는 특징으로 하는 터치패널용 패드 제조방법.Copper, copper containing aluminum, nickel, chromium, molybdenum or an alloy thereof.
  18. 제 11항에 있어서, 상기 터치패널용 패드 제조방법은, The method of claim 11, wherein the pad manufacturing method for the touch panel includes:
    진공챔버 내에서 동작하는 것을 특징으로 하는 터치패널용 패드 제조방법.Method of manufacturing a pad for a touch panel, characterized in that it operates in a vacuum chamber.
  19. 제11항의 방법에 의해서 만들어진 상기 터치패널용 패드.The touch panel pad made by the method of claim 11.
PCT/KR2010/009579 2009-12-31 2010-12-30 Manufacturing system of touch panel pad, manufacturing method thereof, and pad for manufacturing touch panel WO2011081482A2 (en)

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Publication number Priority date Publication date Assignee Title
US20010051275A1 (en) * 2000-02-03 2001-12-13 Toru Muraoka Method and apparatus for manufacturing film with conductive sheet, for touch-panel, and film manufactured thereby
KR20060009859A (en) * 2003-04-22 2006-02-01 터치센서 테크놀로지스, 엘엘씨 Substrate with multiple conductive layers and methods for making and using same
KR20070054661A (en) * 2004-09-10 2007-05-29 군제 가부시키가이샤 Touch panel and method for manufacturing film material for touch panel
KR20090003993A (en) * 2007-07-06 2009-01-12 주식회사 에폰 Method of manufacturing translucent film with reflection function for touch pannel and translucent film with reflection function manufactured by the method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010051275A1 (en) * 2000-02-03 2001-12-13 Toru Muraoka Method and apparatus for manufacturing film with conductive sheet, for touch-panel, and film manufactured thereby
KR20060009859A (en) * 2003-04-22 2006-02-01 터치센서 테크놀로지스, 엘엘씨 Substrate with multiple conductive layers and methods for making and using same
KR20070054661A (en) * 2004-09-10 2007-05-29 군제 가부시키가이샤 Touch panel and method for manufacturing film material for touch panel
KR20090003993A (en) * 2007-07-06 2009-01-12 주식회사 에폰 Method of manufacturing translucent film with reflection function for touch pannel and translucent film with reflection function manufactured by the method

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