WO2011078171A1 - Method for evaluating solar cell and device for evaluating same - Google Patents

Abstract

The disclosed solar-cell evaluation method involves: forming a first groove (140a) by removing the semiconductor layer (14) so as to surround the evaluation region (Rb); laminating a second electrode layer (15) on the semiconductor layer (14), in which the first groove (140a) has been formed, to thus embed the second electrode layer (15) in the first groove (140a); forming a second groove (140b) within the region surrounded by the first groove (140a) and located inside the same in the direction parallel to the substrate (11), the second groove being formed by removing the semiconductor layer (14) and the second electrode layer (15), thus electrically insulating the evaluation region (Rb) from the surrounding region; irradiating a region including the evaluation region (Rb), which has been electrically insulated from the surrounding region, with light; and measuring the current-and-voltage properties in the evaluation region (Rb) while the region including the evaluation region (Rb) is being irradiated with light.

Description

Solar cell evaluation method and evaluation apparatus

The present invention relates to an evaluation method and an evaluation apparatus that can locally evaluate photoelectric conversion efficiency simply and with high accuracy in a desired region of a solar cell.
This application claims priority based on Japanese Patent Application No. 2009-290985 filed on Dec. 22, 2009, the contents of which are incorporated herein by reference.

In recent years, solar cells are being used more and more widely from the viewpoint of efficient use of energy. In particular, a solar cell using a silicon single crystal is excellent in energy conversion efficiency per unit area. However, on the other hand, since a solar cell using a silicon single crystal uses a silicon wafer obtained by slicing a silicon single crystal ingot, a large amount of energy is consumed for manufacturing the ingot, and the manufacturing cost is high. In particular, in the case of realizing a large area solar cell installed outdoors or the like, if a solar cell is manufactured using a silicon single crystal, it is considerably expensive at present. Thus, solar cells using amorphous (amorphous) silicon thin films that can be manufactured at lower cost are widely used as low-cost solar cells.

Amorphous silicon solar cells use a semiconductor film having a layer structure called a pin junction in which an amorphous silicon film (i-type) that generates electrons and holes when receiving light is sandwiched between p-type and n-type silicon films. . Electrodes are formed on both sides of the semiconductor film. Electrons and holes generated by sunlight move actively due to the potential difference between the p-type and n-type semiconductors, and this is continuously repeated, causing a potential difference between the electrodes on both sides.

As a specific configuration of such an amorphous silicon solar cell, for example, a transparent electrode such as TCO (Transparent Conductive Oxide) is formed on a glass substrate as a lower electrode, and a semiconductor film made of amorphous silicon, an upper electrode, A structure in which an Ag thin film or the like is formed is employed.
In an amorphous silicon solar cell having a photoelectric conversion body composed of such upper and lower electrodes and a semiconductor film, there is a problem that a potential difference is small and a resistance value is large only by depositing each layer uniformly over a wide area on a substrate. is there. Therefore, for example, an amorphous silicon solar cell is configured by forming partition elements in which photoelectric conversion bodies are electrically partitioned for each predetermined size and electrically connecting partition elements adjacent to each other. Specifically, a plurality of strip-shaped partition elements are obtained by forming grooves called scribe lines with a laser beam or the like in a photoelectric converter uniformly formed over a large area on a substrate. The structure in which the partition elements are electrically connected in series is employed.

By the way, in the thin film solar cell of such a structure, it is known that some structural defects will arise in a manufacture stage. For example, when the thin film is formed, particles may be mixed into the thin film solar cell or a pinhole may be generated, so that the upper electrode and the lower electrode are locally short-circuited. Further, after the photoelectric conversion body is formed on the substrate, when the photoelectric conversion body is divided into a plurality of partition elements by the scribe line, the metal film constituting the upper electrode is melted along the scribe line to form the lower electrode. And the upper electrode and the lower electrode may be locally short-circuited by the molten metal. When short-circuiting in this way, the photoelectric conversion efficiency changes locally in the direction parallel to the thin film surface, and non-uniform photoelectric conversion efficiency distribution (bias) occurs.
Furthermore, with the increase in size of thin film solar cells, non-uniform distribution of photoelectric conversion efficiency tends to occur in the direction parallel to the thin film surface due to the film forming conditions or the state of the film forming apparatus, resulting in variations in solar cell quality. Is likely to occur.
Therefore, it is desired to develop a technology that can accurately measure the photoelectric conversion efficiency, and when the non-uniform photoelectric conversion efficiency distribution occurs, can accurately identify the location causing the non-uniform distribution. .

On the other hand, conventionally, for example, a method of producing a plurality of small thin-film solar cells (minicells) and measuring the photoelectric conversion efficiency is employed (see Patent Documents 1 and 2). Hereinafter, a specific description will be given with reference to FIGS. 8A to 8F. 8A to 8F are schematic cross-sectional views for explaining a conventional measurement method for locally measuring the photoelectric conversion efficiency of a part of a solar cell.
First, as shown in FIG. 8A, a first electrode layer 13 (lower electrode) and a semiconductor layer 14 ′ are stacked in this order on a light-transmitting substrate 11 ′.
Next, as shown in FIG. 8B, a mask 91 used to form a second electrode layer 15 ′ (upper electrode) having a desired pattern is formed on the semiconductor layer 14 ′ by patterning. To do. As a method for forming the mask, for example, a known patterning method such as laminating a photoresist on the semiconductor layer 14 ′, performing exposure and development is used.
Next, as shown in FIG. 8C, a second electrode layer 15 ′ is stacked on the semiconductor layer 14 ′ on which the mask 91 is patterned. Thereafter, as shown in FIG. 8D, the mask 91 is removed, and the second electrode layer 15 ′ is patterned.
Next, as shown in FIG. 8E, a part of the semiconductor layer 14 ′ exposed by removing the mask 91 is removed to form a removed portion. Thereafter, as shown in FIG. 8F, a conductive layer 92 is provided in a part of the removal portion so as to be in contact with the first electrode layer 13 and the semiconductor layer 14 ′ and not to be in contact with the second electrode layer 15 ′. . By this method, the substrate 11 ′ and the second electrode layer 15 ′ are electrically connected to produce the minicell 10a. As a material of the conductive layer 92, for example, solder can be used. FIG. 9 shows a schematic plan view of a solar cell 10 ′ having such a minicell 10a.

Using solar cell 10 ′ obtained as described above, as shown in FIG. 10, light is applied to minicell 10a locally using light shielding plate 93, and the photoelectric conversion efficiency of minicell 10a is locally increased. To measure. FIG. 10 is a schematic cross-sectional view for explaining a conventional method of irradiating light to a minicell. In FIG. 10, reference numeral 330 denotes a probe such as a current / voltage measuring instrument, and the conductive layer 92 is in contact with the second electrode layer 15 'formed in the minicell 10a. Thus, the photoelectric conversion efficiency in a minicell is measured locally using the apparatus which measures a current-voltage characteristic.

JP 2009-111215 A JP 2004-241449 A

However, in the above-described conventional method, a part of the semiconductor layer 14 ′ shown in FIG. 8E is manually removed using a needle. This operation requires skill, and there is a problem that the removal operation cannot be easily performed. Furthermore, the solar cell is generally large, and in order to measure the photoelectric conversion efficiency in a region close to the central portion of the solar cell in the direction parallel to the substrate, for example, as shown in FIG. It is necessary to measure the photoelectric conversion efficiency after dividing the battery into a plurality of small batteries. For this reason, there existed a problem that the process of measuring photoelectric conversion efficiency was complicated. FIG. 11 is a schematic diagram illustrating an example in which the solar cell 10 ′ is divided into a plurality of small batteries. Furthermore, as shown in FIG. 11, in order to irradiate light locally on the minicell 10a, it is necessary to use a member such as a light shielding plate 93 that limits the region irradiated with light, and the photoelectric conversion efficiency. There is a problem in that the process of measuring is complicated. As described above, the process of measuring the photoelectric conversion efficiency of the solar cell is complicated, has low versatility, and is difficult to automate.

This invention is made | formed in view of the said situation, and provides the evaluation method and evaluation apparatus which can evaluate photoelectric conversion efficiency simply and highly accurately locally in the desired area | region of a thin film solar cell. Objective.

In order to solve the above-described problems, the solar cell evaluation method according to the first aspect of the present invention provides a substrate in which at least a first electrode layer and a semiconductor layer are laminated in this order, and a predetermined photoelectric conversion efficiency is evaluated. A first groove is formed by removing the semiconductor layer so as to surround the evaluation region, and a second electrode layer is stacked on the semiconductor layer on which the first groove is formed, thereby Burying the second electrode layer in a groove and removing the semiconductor layer and the second electrode layer in an inner region surrounded by the first groove in a direction parallel to the substrate. Forming and electrically insulating the evaluation region from a peripheral region, irradiating light to the region including the evaluation region electrically isolated from the peripheral region, and irradiating light to the region including the evaluation region. In the evaluation area when Kicking current-voltage characteristic is measured.

In the solar cell evaluation method of the first aspect of the present invention, the substrate and the first electrode layer are light transmissive, and the substrate is opposite to the surface on which the first electrode layer is formed. It is preferable to form the first groove and the second groove by irradiating the surface with a laser.

In order to solve the above problems, the solar cell evaluation method according to the second aspect of the present invention provides a substrate in which at least a first electrode layer and a semiconductor layer are laminated in this order, and a second electrode layer is formed on the semiconductor layer. Forming a first removal portion on the second electrode layer along a predetermined evaluation region where photoelectric conversion efficiency is evaluated, and in the first removal portion, along the first removal portion By removing a part of the semiconductor layer and the first electrode layer, a second removal portion is formed, so as not to contact the second electrode layer and along the evaluation region, Forming a conductive layer for burying the second removal portion, electrically insulating the evaluation region from the peripheral region, irradiating only the evaluation region electrically insulated from the peripheral region, and the evaluation region; The evaluation region and the conductivity when the light is irradiated Contacts arranged probe to measure the current-voltage characteristics in the evaluation region.

In order to solve the above-described problem, a solar cell evaluation apparatus according to a third aspect of the present invention surrounds a first evaluation apparatus and a predetermined evaluation region, in which a first electrode layer and a semiconductor layer are stacked in this order on a substrate. The first removing device for forming the first groove by removing the semiconductor layer as described above, and the second electrode layer on the semiconductor layer in which the first groove is formed, Removing the semiconductor layer and the second electrode layer in an inner region surrounded by the first groove in a direction parallel to the substrate and a second laminating apparatus for burying the second electrode layer in one groove Forming a second groove and electrically irradiating the region including the evaluation region electrically isolated from the peripheral region and a second removing device that electrically isolates the evaluation region from the peripheral region Including a light irradiating part and the evaluation region And a measuring unit for measuring a current-voltage characteristic in the evaluation region when light is irradiated to pass.

In the solar cell evaluation apparatus of the third aspect of the present invention, the first removal device and the second removal device each include a laser light source, the light irradiation unit includes a light source, and the measurement unit includes a current or a voltage. It is preferable that any one or more of the laser light source, the light source, and the probe move independently above the solar cell.

A solar cell evaluation apparatus according to a fourth aspect of the present invention includes a stacking apparatus that stacks a first electrode layer and a semiconductor layer on a substrate in this order, and a second electrode forming unit that forms a second electrode layer on the semiconductor layer. And a first removal device that forms a first removal portion on the second electrode layer so as to be along a predetermined evaluation region, and in the first removal portion, the semiconductor layer along the first removal portion. And by removing a part of the first electrode layer, a second removal device for forming a second removal portion, so as not to contact the second electrode layer, and along the evaluation region, Only a conductive layer forming portion for forming a conductive layer for burying the second removal portion, an insulating portion for electrically insulating the evaluation region from the peripheral region, and only the evaluation region electrically insulated from the peripheral region A light irradiating part for irradiating light to the evaluation area, The evaluation region and in contact probe placement on the conductive layer when that includes a measuring unit for measuring the current-voltage characteristics in the evaluation region.

According to the present invention, local photoelectric conversion efficiency can be easily and accurately evaluated in a desired region of a thin film solar cell.

It is a schematic sectional drawing which illustrates the solar cell evaluated by the evaluation method of 1st Embodiment of this invention. It is an expanded sectional view which shows the part shown by the code | symbol A of FIG. 1A. It is a figure explaining the evaluation method of 1st Embodiment of this invention, and is a schematic sectional drawing explaining the process of producing a minicell. It is a figure explaining the evaluation method of 1st Embodiment of this invention, and is a schematic sectional drawing explaining the process of producing a minicell. It is a figure explaining the evaluation method of 1st Embodiment of this invention, and is a schematic sectional drawing explaining the process of producing a minicell. It is a figure explaining the evaluation method of 1st Embodiment of this invention, and is a schematic sectional drawing explaining the process of producing a minicell. It is a figure explaining the evaluation method of 1st Embodiment of this invention, and is a schematic plan view explaining the process of producing a minicell. It is a figure explaining the evaluation method of 1st Embodiment of this invention, and is a schematic plan view explaining the process of producing a minicell. It is a figure explaining the evaluation method of 1st Embodiment of this invention, and is a schematic plan view explaining the process of producing a minicell. It is a figure explaining the evaluation method of 1st Embodiment of this invention, and is a schematic plan view explaining the process of producing a minicell. It is a schematic sectional drawing explaining the measuring method of the current-voltage characteristic in the measurement process of the evaluation method of 1st Embodiment of this invention. It is a schematic plan view explaining the measurement method of the current-voltage characteristic in the measurement process of the evaluation method of 1st Embodiment of this invention. It is a figure explaining the evaluation method of 2nd Embodiment of this invention, and is a schematic sectional drawing explaining the process of producing a minicell. It is a figure explaining the evaluation method of 2nd Embodiment of this invention, and is a schematic sectional drawing explaining the process of producing a minicell. It is a figure explaining the evaluation method of 2nd Embodiment of this invention, and is a schematic sectional drawing explaining the process of producing a minicell. It is a figure explaining the evaluation method of 2nd Embodiment of this invention, and is a schematic sectional drawing explaining the process of producing a minicell. It is a figure explaining the evaluation method of 2nd Embodiment of this invention, and is a schematic sectional drawing explaining the process of producing a minicell. It is a figure explaining the evaluation method of 2nd Embodiment of this invention, and is a schematic plan view explaining the process of producing a minicell. It is a figure explaining the evaluation method of 2nd Embodiment of this invention, and is a schematic plan view explaining the process of producing a minicell. It is a figure explaining the evaluation method of 2nd Embodiment of this invention, and is a schematic plan view explaining the process of producing a minicell. It is a figure explaining the evaluation method of 2nd Embodiment of this invention, and is a schematic plan view explaining the process of producing a minicell. It is a figure explaining the evaluation method of 2nd Embodiment of this invention, and is a schematic plan view explaining the process of producing a minicell. It is a schematic sectional drawing explaining the measuring method of the current-voltage characteristic in the measurement process of the evaluation method of 2nd Embodiment of this invention. It is a schematic plan view explaining the measuring method of the current-voltage characteristic in the measurement process of the evaluation method of 2nd Embodiment of this invention. It is a schematic sectional drawing for demonstrating the conventional measuring method which measures the photoelectric conversion efficiency of a solar cell locally. It is a schematic sectional drawing for demonstrating the conventional measuring method which measures the photoelectric conversion efficiency of a solar cell locally. It is a schematic sectional drawing for demonstrating the conventional measuring method which measures the photoelectric conversion efficiency of a solar cell locally. It is a schematic sectional drawing for demonstrating the conventional measuring method which measures the photoelectric conversion efficiency of a solar cell locally. It is a schematic sectional drawing for demonstrating the conventional measuring method which measures the photoelectric conversion efficiency of a solar cell locally. It is a schematic sectional drawing for demonstrating the conventional measuring method which measures the photoelectric conversion efficiency of a solar cell locally. It is a schematic plan view which illustrates the solar cell provided with the minicell. It is a schematic sectional drawing for demonstrating the conventional method which irradiates light to a minicell. It is the schematic which shows the example of the solar cell divided | segmented when measuring photoelectric conversion efficiency in the conventional method.

Below, embodiment of the evaluation method and evaluation apparatus of the solar cell which concerns on this invention is described based on drawing.
The technical scope of the present invention is not limited to the embodiments described below, and various modifications can be made without departing from the spirit of the present invention.
In the drawings used for the following description, the scale of each member is appropriately changed in order to make each member a recognizable size.

<First Embodiment of Solar Cell Evaluation Method>
FIG. 1A is a schematic cross-sectional view showing a solar cell to which the evaluation method of the first embodiment of the present invention is applied. FIG. 1B is an enlarged cross-sectional view showing a portion indicated by reference numeral A in FIG. 1A.
The solar cell 10 includes a photoelectric conversion body 12 in which at least a first electrode layer 13 (lower electrode), a semiconductor layer 14, and a second electrode layer 15 (upper electrode) are stacked in this order on the first surface 11a of the substrate 11. Prepare.

The substrate 11 is made of, for example, an insulating material having excellent sunlight permeability and durability such as glass or transparent resin. The solar cell 10 can be made to generate electric power by making sunlight incident on the second surface 11 b of the substrate 11.

The first electrode layer 13 is made of a transparent conductive material, for example, a light transmissive metal oxide such as TCO or ITO. The second electrode layer 15 is formed of a conductive metal film such as Ag or Cu.

For example, when the solar cell 10 is a thin-film silicon solar cell, the semiconductor layer 14 has an i-type silicon film 16 sandwiched between a p-type silicon film 17 and an n-type silicon film 18 as shown in FIG. 1B. It has a pin junction structure. When sunlight enters the semiconductor layer 14, electrons and holes are generated, and the electrons and holes move actively due to the potential difference between the p-type silicon film 17 and the n-type silicon film 18, and this is repeated continuously. Thus, a potential difference is generated between the first electrode layer 13 and the second electrode layer 15 (photoelectric conversion). As a material for the silicon film, any material such as an amorphous type or a nanocrystal type is adopted.

The photoelectric conversion body 12 is usually divided into a plurality of partition elements whose outer shape is a strip shape, for example, by a scribe line (not shown). The partition elements are electrically partitioned from each other, and are electrically connected in series, for example, between partition elements adjacent to each other. Thereby, the photoelectric conversion body 12 has a structure in which a large number of partition elements are all electrically connected in series, and can extract a current with a high potential difference. The scribe line is formed, for example, by forming the photoelectric conversion body 12 uniformly on the first surface 11a of the substrate 11 and then forming grooves in the photoelectric conversion body 12 at a predetermined interval by a laser or the like. In the first embodiment, the operation described below is performed in a region where no scribe line is formed.

On the surface on which the photoelectric conversion body 12 of the solar cell 10 of the first embodiment is formed, as will be described below, there are a predetermined region where the photoelectric conversion efficiency is evaluated and a peripheral region located around the predetermined region. The area is set.
In the first embodiment, a protective layer (not shown) made of an insulating resin or the like may be further formed on the second electrode 15 constituting the photoelectric converter 12.

In addition, as shown in FIG. 1B, in the first embodiment, a single-type semiconductor layer configured by a single pin junction structure is illustrated, but the present invention is not limited to this structure. Alternatively, a tandem semiconductor layer in which a plurality of pin junction structures such as three are stacked may be employed.
In the case of such a tandem semiconductor layer, the layer (film thickness, type of film material, etc.) on which photoelectric conversion is performed can be adjusted in accordance with the wavelength band of light irradiated on the solar cell.

In the evaluation method of the first embodiment of the present invention, a plurality of minicells having different forms from the conventional ones are simultaneously produced in the solar cell manufacturing process, and the photoelectric conversion efficiency in the minicells is locally evaluated.
Hereinafter, each step of the evaluation method will be sequentially described with reference to FIGS. 2A to 3D in the case of the solar cell illustrated in FIGS. 1A and 1B.
2A to 3D are diagrams for explaining an evaluation method according to the first embodiment of the present invention. FIGS. 2A to 2D are schematic cross-sectional views for explaining a process for manufacturing a minicell, and FIGS. 3A to 3D are schematic plan views. FIG.

(First groove forming step)
In the evaluation method of the first embodiment of the present invention, first, the first electrode layer 13 and the semiconductor layer 14 are stacked in this order on the first surface 11a of the substrate 11 as shown in FIGS. 2A and 3A. Thereafter, the semiconductor layer 14 is removed so as to surround the predetermined evaluation region, and a step of forming the first groove 140a (first groove forming step) is performed. Here, the predetermined evaluation area is an area located between the first grooves 140a in FIG. 2A and is an area surrounded by the first grooves 140a in FIG. 3A.
As a method for forming the first electrode layer 13 and the semiconductor layer 14, a known method is used. Moreover, the thickness of the 1st electrode layer 13 and the semiconductor layer 14 may be the same as the thickness in the layer structure of the conventional solar cell.

The first groove 140a can be formed, for example, by irradiating a laser.
The wavelength of the laser is preferably in the range of about 500 to 560 nm, and it is usually preferable to use a green laser of 532 nm.
As a laser irradiation method, it is preferable to irradiate the laser toward the second surface 11b of the substrate 11 (the surface opposite to the surface on which the first electrode layer 13 is formed).

The width of the first groove 140a (the width in the plan view of FIG. 3A) Wa is not limited to a specific width as long as the region Ra surrounded by the first groove 140a is electrically insulated from the peripheral region. The width Wa is preferably about 10 to 200 μm, and more preferably about 80 to 120 μm.

In the first embodiment of the present invention, a structure in which the width Wa of the first groove 140a is the same throughout is illustrated, but the present invention is not limited to this structure, and a part of the first groove 140a. The width of the first groove 140a may be different from the width of the other part, or the width of the first groove 140a may be different throughout (the width of the first groove 140a may be entirely changed). .
However, a structure in which the width Wa of the first groove 140a is the same throughout is most preferable in that the groove can be easily formed.
In the first embodiment of the present invention, a structure in which the first electrode layer 13 is not removed is illustrated. However, as long as the effect of the present invention is not hindered, one of the first electrode layers 13 close to the semiconductor layer 14 is illustrated. The part may be removed.

The surface area of the region Ra in the direction parallel to the substrate 11 (surface area in the plan view of FIG. 3A) can be arbitrarily set according to the purpose (necessary). For example, the surface area of the evaluation region Rb described later is considered. To set.
In general, the surface area of the region Ra is preferably about 36 to 225 mm ² , and more preferably about 64 to 144 mm ² .
When the surface shape of the region Ra is, for example, substantially rectangular as shown in FIG. 3A, the length of one side is preferably about 6 to 15 mm, and more preferably about 8 to 12 mm.

In the first embodiment of the present invention, a structure in which the shape of the region Ra is a substantially square shape in a plan view is illustrated. In other words, a structure in which the three-dimensional shape (the entire shape) of the region Ra is a substantially quadrangular prism shape is illustrated. The present invention is not limited to this structure, and the shape of the region Ra may be another polygonal shape such as a substantially triangular shape or a substantially pentagonal shape, or may be another shape such as a substantially circular shape or a substantially elliptical shape. It may be.
In addition, the region Ra may be formed in a composite shape in which two or more of the plurality of shapes are combined, and further formed in an indefinite shape that does not belong to any of the plurality of shapes. May be.
However, it is most preferable that the region Ra is formed in a polygonal shape, particularly a substantially rectangular shape, in that the region Ra can be easily formed.

(Second electrode layer forming step)
In the evaluation method of the first embodiment of the present invention, after the first groove forming step, as shown in FIGS. 2B and 3B, the second electrode is formed on the surface on the substrate 11 on which the first groove 140a is formed. The layer 15 is laminated, and the second electrode layer 15 is buried in the first groove 140a (second electrode layer forming step). As a method for forming the second electrode layer 15, a known method is used.
The thickness of the second electrode layer 15 may be the same as the thickness of the conventional solar cell layer structure, except for the thickness of the second electrode layer 15 buried in the first groove 140a.

In the 1st groove | channel 140a, the site | part in which the 2nd electrode layer 15 is embedded should just be formed in the whole depth direction (thickness direction of the semiconductor layer 14) of the 1st groove | channel 140a. In the first groove 140 a, a gap may exist in a part of the second electrode layer 15, but it is preferable that the volume of the gap is small, and all of the first groove 140 a is buried in the second electrode layer 15. It is particularly preferred that
By performing the second electrode layer forming step, the second electrode layer 15 and the first electrode layer 13 can be brought into electrical contact through the portion of the second electrode layer 15 buried in the first groove 140a. It becomes possible.

(Second groove forming step)
In the evaluation method of the first embodiment of the present invention, after the second electrode layer forming step, as shown in FIGS. 2C and 3C, the inner region surrounded by the first groove 140 a in the direction parallel to the substrate 11. Then, the second groove 140b is formed by removing the semiconductor layer 14 and the second electrode layer 15 (second groove forming step). By this step, an evaluation region that is electrically insulated from the peripheral region is formed.
By forming the second groove 140b, the solar cell 10 in which the minicell 10a including the evaluation region Rb surrounded by the second groove 140b and insulated from the region Ra is formed is obtained.

As a method of forming the second groove 140b, a method similar to the method of forming the first groove 140a may be used. As a method for removing the semiconductor layer 14 and the second electrode layer 15, the method for removing the semiconductor layer 14 may be the same as or different from the method for removing the second electrode layer 15. Further, the semiconductor layer 14 and the second electrode layer 15 may be removed at the same time, or may be removed separately sequentially.

The width (the width in the plan view of FIG. 3A) Wb of the second groove 140b is not limited to a specific width as long as the evaluation region Rb is electrically insulated from the peripheral region. The width Wb may be the same as the width Wa of the first groove 140a.

In the first embodiment of the present invention, a structure in which the width Wb is the same throughout is exemplified as the second groove 140b, but the present invention is not limited to the structure, and a part of the second groove 140b. The width of the second groove 140b may be different from the width of the other portion, or the width of the second groove 140b may be different throughout (the width of the second groove 140b may be entirely changed). .
However, the structure in which the width Wb of the second groove 140b is the same throughout is most preferable in that the groove can be easily formed.
In the first embodiment of the present invention, a structure in which the first electrode layer 13 is not removed is illustrated. However, as long as the effect of the present invention is not hindered, one of the first electrode layers 13 close to the semiconductor layer 14 is illustrated. The part may be removed.

The surface area of the evaluation region Rb in the direction parallel to the substrate 11 (the surface area of the evaluation region Rb in the plan view of FIG. 3C) can be arbitrarily set to be smaller than the surface area of the region Ra in the direction parallel to the substrate 11. For example, it is preferable to set the surface area of the evaluation region Rb in consideration of the distance between probes such as a current-voltage measuring instrument used when evaluating photoelectric conversion efficiency.
Usually, the surface area of the evaluation region Rb is preferably about 1 to 100 mm ² , and more preferably about 9 to 49 mm ² .
When the surface shape of the evaluation region Rb is, for example, a substantially square shape as shown in FIG. 3A, the length of one side is preferably about 1 to 10 mm, more preferably about 3 to 7 mm. preferable.

In 1st Embodiment of this invention, the structure where the shape of evaluation area | region Rb is substantially square shape in a top view is illustrated. In other words, a structure in which the three-dimensional shape (the overall shape) of the evaluation region Rb is a substantially quadrangular prism shape is illustrated. The present invention is not limited to this structure, and the shape of the evaluation region Rb may be other polygonal shapes such as a substantially triangular shape and a substantially pentagonal shape, or may be other shapes such as a substantially circular shape and a substantially elliptical shape. It may be a shape.
Further, the evaluation region Rb may be formed in a composite shape in which two or more types of shapes are combined, and further formed in an indefinite shape that does not belong to any of the plurality of shapes. May be.
However, it is most preferable that the evaluation region Rb is formed in a polygonal shape, particularly a substantially rectangular shape, in that the evaluation region Rb can be easily formed.

(Third groove forming step)
In the evaluation method of the first embodiment of the present invention, after the second groove forming step, as shown in FIGS. 2D and 3D, the semiconductor layer 14 and the second electrode layer 15 are removed to remove the third groove 140c. It is preferable to perform a step of forming (third groove forming step). In this step, in the direction parallel to the substrate 11, the outer region of the first groove 140a in which the second electrode layer 15 is buried (the region located outside the inner region surrounded by the first groove 140a). ) Is formed with a third groove 140c. By this step, the region including the entire first groove 140a is electrically insulated from the peripheral region. In other words, by performing the third groove forming step, the region Rc surrounded by the third groove 140c is electrically insulated from the peripheral region, and the photoelectric conversion efficiency in the evaluation region Rb is evaluated with higher accuracy. Can do. Here, the region Rc includes a region Ra including the evaluation region Rb.

As a method of forming the third groove 140c, a method similar to the method of forming the second groove 140b may be used.
The width Wc of the third groove 140c is not limited to a specific width as long as the region Rc is electrically insulated from the peripheral region. The width Wc may be the same as the width Wb of the second groove 140b.
When it is assumed that the second groove 140b does not exist, the surface area of the region Rc in the plan view of FIG. 3D can be arbitrarily set to be larger than the surface area of the region Ra in the plan view. For example, it is preferable to set the surface area of the region Rc in consideration of the distance between probes such as a current / voltage measuring instrument used when evaluating photoelectric conversion efficiency.
When it is assumed that the second groove 140b does not exist, the shape of the region Rc in the plan view may be the same as the shape of the region Ra or the evaluation region Rb.
The form (structure) of the third groove 140c may be the same as that of the second groove 140b.
In the evaluation method of the first embodiment of the present invention, the state in which the first electrode layer 13 is not removed is illustrated, but the first electrode close to the semiconductor layer 14 within a range that does not hinder the effects of the present invention. A part of the layer 13 may be removed.

(Irradiation process)
In the evaluation method of the first embodiment of the present invention, after the third groove forming step, or when the third groove forming step is not performed, the second groove forming step is insulated from the peripheral region. Light is irradiated to a region including the evaluation region (irradiation process).
For example, when the solar cell 10 after the minicell 10a shown in FIGS. 2A to 3D is irradiated with light, the region irradiated with the light only needs to include the evaluation region Rb, and the outside of the evaluation region Rb. Light may be irradiated to a region located at the position. As shown in FIG. 4A, the light is applied to the substrate 11 of the solar cell 10 and enters the semiconductor layer 14 through the substrate 11.
In the minicell 10a, since the evaluation region Rb is electrically insulated from the peripheral region, there is no need to limit the region irradiated with light with a light shielding plate or the like when performing the irradiation step, and the irradiation step is simplified. Can be done.

(Measurement process)
In the evaluation method of the first embodiment of the present invention, the current-voltage characteristics in the evaluation region when the region including the evaluation region is irradiated with light is then measured (measurement step).
For example, when the current-voltage characteristics of the solar cell 10 shown in FIGS. 2A to 3D are measured, the measurement process is performed as illustrated in FIGS. 4A and 4B.
4A and 4B are diagrams illustrating a method for measuring current-voltage characteristics in the measurement process of the first embodiment, FIG. 4A is a schematic cross-sectional view, and FIG. 4B is a schematic plan view.
Moreover, the arrow shown by FIG. 4A and 4B represents the electric current at the time of a measurement.
In the minicell 10a shown in FIGS. 4A and 4B, the first probe 330A (current-voltage characteristic measurement unit, measurement unit) is disposed in contact with the second electrode layer 15 formed in the evaluation region Rb. The second electrode layer formed outside the second groove 140b in the direction parallel to the substrate 11 (outside the region surrounded by the second groove 140b) and close to the first groove 140a 15, the second probe 330B (current-voltage characteristic measurement unit, measurement unit) is placed in contact. When current flows from the first probe 330A toward the second probe 330B, the current-voltage characteristics of the minicell 10a are measured. Here, the 2nd electrode layer 15 is formed in the surface located opposite to the surface of the solar cell 10 with which light is irradiated.
By measuring the current-voltage characteristics in this manner, the current-voltage characteristics can be measured through the second electrode layer 15 that surrounds the evaluation region Rb insulated from the peripheral region and is buried in the first groove 140a.
At this time, the evaluation region Rb is reliably insulated from other regions (peripheral regions), and thus is not affected by the other regions.

Of the probes 330A and 330B, the place where the probe arranged outside the evaluation region Rb is arranged, that is, the position where the second probe 330B is arranged is the first groove in which the second electrode layer 15 is buried. It is close to 140a.
For example, as shown in FIG. 4A, when the concave portion 150a of the second electrode layer 15 is formed right above the first groove 140a, two second portions are formed so as to straddle the concave portion 150a. A probe 330B may be arranged. Further, both of the two second probes 330B may be disposed at a position (inner position) between the concave portion 150a and the second groove 140b in a direction parallel to the substrate. Further, both of the two second probes 330B may be disposed at a position (outside position) between the concave portion 150a and the third groove 140c in a direction parallel to the substrate. Further, either one or both of the two second probes 330B may be disposed on the concave portion 150a.
In the evaluation method according to the first embodiment of the present invention, the voltage (or resistance) flowing through the minicell 10a may be measured by applying a voltage to the minicell 10a by using the probes 330A and 330B. For example, when the resistance between the electrodes of the minicell 10a is measured by applying a voltage between the first electrode layer 13 and the second electrode layer 15 in a state where the minicell 10a is not irradiated with light, the current-voltage characteristic is It is possible to detect whether the minicell 10a is defective before measurement.
Further, the relationship between the resistance between the electrodes of the minicell 10a and the current-voltage characteristics can also be measured.

In all the steps described above in the evaluation method of the first embodiment of the present invention, manual work is not required and automation is possible.
In addition, even when evaluating the photoelectric conversion efficiency of a large solar cell, the solar cell required to measure the photoelectric conversion efficiency in the vicinity region near the center in the direction parallel to the substrate is divided into a plurality of The process to perform is also unnecessary. Further, there is no need for a step of limiting a region irradiated with light by a light shielding plate or the like.
As described above, the evaluation method of the first embodiment of the present invention is significantly superior to the conventional evaluation method in that the photoelectric conversion efficiency in a predetermined region of the solar cell can be evaluated easily and with high accuracy.

<First Embodiment of Evaluation Device for Solar Cell>
The solar cell evaluation apparatus of the first embodiment of the present invention is used in the above-described evaluation method. The evaluation apparatus forms a first groove by removing the semiconductor layer so as to surround a predetermined evaluation region, and a first stacking apparatus that stacks a first electrode layer and a semiconductor layer in this order on a substrate. A first removing device and a second laminating device for burying the second electrode layer in the first groove by laminating a second electrode layer on the semiconductor layer in which the first groove is formed A second groove is formed by removing the semiconductor layer and the second electrode layer in an inner region surrounded by the first groove in a direction parallel to the substrate, and the evaluation region is a peripheral region A second removing device that electrically insulates from, a light irradiation unit that irradiates light to a region including the evaluation region that is electrically insulated from the peripheral region, and a region that includes the evaluation region is irradiated with light. Current in the evaluation region when And a measuring unit for measuring the pressure characteristics.
Here, the evaluation region means, for example, an evaluation region Rb that is evaluated by irradiating light to the solar cell 10 after the minicell 10a shown in FIGS. 2A to 3D is formed.

The first laminating apparatus and the second laminating apparatus are the same apparatuses as those used when forming an electrode layer, a semiconductor layer, or the like in a conventional solar cell manufacturing apparatus.

Examples of the first removal device and the second removal device include a laser irradiation device provided with a laser light source. The laser irradiation apparatus is preferably capable of irradiating a laser having a wavelength of about 500 to 560 nm, usually a green laser of 532 nm.

As a light irradiation part, the light irradiation apparatus provided with the light source can be illustrated. In the present embodiment, “light source” represents “light source constituting the light irradiation unit” and is distinguished from “laser light source constituting the first removal device or the second removal device”.
As a structure of the light irradiation device, a structure including one light source may be employed, or a structure including two or more light sources may be employed.
In a structure including two or more light sources, the plurality of light sources may be the same as each other, one of the plurality of light sources may be different from the other light sources, or all of the plurality of light sources may be different from each other. Good.
Here, “the light sources are different” means, for example, that the wavelengths of light emitted from a plurality of light sources are different from each other.

As the measurement unit, for example, a current-voltage measuring device including a plurality of probes can be employed.
Specifically, as a structure of the current voltage measuring device, a so-called four-terminal structure having two sets of probes each having a voltage probe and a current probe provided separately, the voltage probe and the current probe are integrated. A structure or the like having two probes provided in can be employed.
Furthermore, in addition to the structure including two probes, a structure including 2n (n represents an integer of 2 or more) probes can be employed.
By using such a current-voltage measuring device, it is possible to simultaneously measure current-voltage characteristics in a plurality of predetermined regions, or to simultaneously measure current-voltage characteristics using a plurality of probes in one predetermined region. .

In the evaluation apparatus according to the first embodiment of the present invention, it is preferable that any one or more of the laser light source, the light source, and the probe can independently move above the solar cell.
In this case, the evaluation apparatus preferably includes a first fixing unit that moves at least one of the laser light source, the light source, and the probe onto a predetermined region. In this case, the device (laser light source, light source, and probe) provided in the first fixed part is movable.
A plurality of first fixing parts may be provided in the evaluation device, and the first fixing parts may be provided independently for each of the laser light source, the light source, and the probe. In this case, each of the laser light source, the light source, and the probe can be independently moved by the plurality of first fixing portions, stopped at a desired position, and positioning can be performed.
Moreover, it is preferable that such a 1st fixing | fixed part is provided with the 1st control part which consists of a computer etc. which were electrically connected with the 1st fixing | fixed part. In this case, the first control unit can automatically control the movement of the first fixing unit.
Furthermore, in the evaluation apparatus of the present embodiment, it is preferable that a solar cell to be evaluated is fixed and a second fixing portion is provided that moves the solar cell, stops it at a desired position, and performs positioning. .
Moreover, it is preferable that such a 2nd fixing | fixed part is provided with the 2nd control part which consists of a computer etc. which were electrically connected with the 2nd fixing | fixed part. In this case, the second control unit can automatically control the movement of the second fixing unit.
Further, the first control unit and the second control unit may be configured integrally. Here, “on the solar cell” to which the laser light source or the like moves may be “on the substrate of the solar cell” or “on the photoelectric converter”.

The movable device selected from the laser light source, the light source, the probe, the first fixed portion, and the second fixed portion, the combination of the movable devices, and the moving direction are not limited to the above-described embodiments. The movable device, the combination of movable devices, and the moving direction are arbitrarily selected and set according to the purpose. For example, any one of the laser light source, the light source, the probe, the first fixing unit, and the second fixing unit may be movable in a direction parallel to the substrate, or the other device may be in a direction perpendicular to the substrate It may be movable.
However, the above-described embodiment is an example of the present invention, and an embodiment according to the situation is adopted.

The evaluation apparatus according to the first embodiment of the present invention may be disposed at a position different from the position where the solar cell manufacturing apparatus is disposed, or may be incorporated into the solar cell manufacturing apparatus.
In the case where an evaluation device is incorporated in a solar cell manufacturing apparatus, for example, a device for laminating an electrode layer or a semiconductor layer in the solar cell manufacturing apparatus (for example, a film forming device) is the first stacking layer. It has the function of a device and a second laminating device.

Since the semiconductor device and the second electrode layer can be easily and accurately removed by the evaluation device of the present invention, the evaluation region can be easily and accurately insulated from the peripheral region.
In such an evaluation apparatus, the above-described process (evaluation method) can be preferably automated. A large amount of samples (minicells) can be processed (evaluated) in a short time.

According to the present invention, in the solar cell, the evaluation region electrically insulated from the peripheral region is provided, and the region including the region is irradiated with light so that the current in the evaluation region is not affected by the peripheral region. Voltage characteristics can be measured, and photoelectric conversion efficiency can be locally evaluated with high accuracy.
For example, if it is found that a plurality of regions where current-voltage characteristics are measured have a region having a photoelectric conversion efficiency greatly different from other regions, it can be determined that a structural defect exists in the region.
On the other hand, when the evaluation method of the first embodiment of the present invention is not applied, it is difficult to accurately determine whether or not the obtained measurement result is affected by a structural defect.
As described above, the present invention evaluates the photoelectric conversion efficiency distribution in the direction parallel to the thin film of the solar cell easily and with high accuracy, and if the distribution is generated, specifies the location easily and with high accuracy. An apparatus and method are provided.

<Second Embodiment of Solar Cell Evaluation Method>
In the second embodiment, the same members as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted or simplified.
Examples of the method of the second embodiment in which the local photoelectric conversion efficiency is evaluated by measuring the current-voltage characteristics of the evaluation region insulated from the peripheral region after the minicell is manufactured include the following methods.
5A to 6E are diagrams for explaining an evaluation method according to the second embodiment of the present invention. FIGS. 5A to 5E are schematic cross-sectional views for explaining a process for manufacturing a minicell, and FIGS. 6A to 6E are schematic plan views. FIG.

First, in order to form a predetermined evaluation region that is electrically insulated from the peripheral region, a first removal portion from which the second electrode layer has been removed is formed along the evaluation region. Next, in the first removal portion, a part of the semiconductor layer and the first electrode layer is further removed along the first removal portion to form a second removal portion.
Specifically, as shown in FIGS. 5A and 6A, the first electrode layer 23 and the semiconductor layer 24 are stacked in this order on the substrate 11 having light transmittance. Next, a mask 91 used for forming the second electrode layer 25 having a desired pattern is patterned on the semiconductor layer 24.
As a method for forming the mask, for example, a known patterning method is used such as performing exposure and development after laminating a photoresist on the semiconductor layer 24.

Next, as shown in FIGS. 5B and 6B, the second electrode layer 25 is laminated on the semiconductor layer 24 on which the mask 91 is formed by patterning. Next, as shown in FIGS. 5C and 6C, the mask 91 is removed, and the second electrode layer 25 is patterned on the semiconductor layer 24.
As a result, the second electrode layer 25 is removed along the region that becomes the evaluation region Rd in a later step, and the first removal portion 240a in which a part of the semiconductor layer 24 is exposed is formed.
In the evaluation method of the second embodiment of the present invention, the outer shape of the first removal portion 240a in the plan view is a quadrangle.

Next, as shown in FIGS. 5D and 6D, a part of the exposed semiconductor layer 24 and a part of the first electrode layer 23 are removed along the pattern of the first removal portion 240a. In the plan view, the second removal portion 240b having a quadrangular outer shape is formed.
Thereby, the step-like groove 240 including the first removal portion 240a and the second removal portion 240b and the evaluation region Rd are formed.
In the evaluation method of the second embodiment of the present invention, a structure in which the semiconductor layer 24 and a part of the first electrode layer 23 close to the semiconductor layer 24 are removed is illustrated. It may not be removed.

Next, the conductive layer 92 is formed along the pattern of the evaluation region Rd so that the formed second removal portion 240b is buried and is not in contact with the second electrode layer 25.
Specifically, as shown in FIGS. 5E and 6E, the conductive layer 92 is formed along the evaluation region Rd so as to fill the second removal portion 240b and not to contact the second electrode layer 25. . Thereby, the solar cell 20 in which the minicell 20a in which the conductive layer 92 and the second electrode layer 25 are electrically connected is formed is obtained.
The conductive layer 92 is formed along the groove 240, and the shape of the conductive layer 92 is a quadrangle in a plan view. The conductive layer 92 can be formed using, for example, solder.
The solar cell 20 shown in FIGS. 5E and 6E has the same structure as the solar cell 10 shown in FIG. 1 except that the minicell 20a is formed.

The materials or thicknesses of the substrate 11, the first electrode layer 23, the semiconductor layer 24, and the second electrode layer 25 in FIGS. 5A to 6E are respectively the substrate 11, the first electrode layer 13 and the first electrode layer 13 in FIGS. Similar to the semiconductor layer 14 and the second electrode layer 25.
The size or shape of the evaluation region Rd is the same as the size or shape of the evaluation region Rb in FIGS. 2A to 3D.
The width or shape of the second removal portion 240b is the same as the width or shape of the first groove 140a in FIGS. 2A to 3D.
The width or shape of the first removal portion 240a is appropriately adjusted according to the size or shape of the evaluation region Rd.

Next, a process of irradiating light only to the evaluation region electrically insulated from the peripheral region, and a probe in contact with the evaluation region and the conductive layer when light is irradiated to the evaluation region, and a current in the evaluation region And a step of measuring voltage characteristics.
7A and 7B are diagrams for explaining a method of measuring current-voltage characteristics in the measurement process of the second embodiment, FIG. 7A is a schematic cross-sectional view, and FIG. 7B is a schematic plan view. Moreover, the arrow shown by FIG. 7A and FIG. 7B represents the electric current at the time of a measurement.
Specifically, in the solar cell 20 obtained by the steps shown in FIGS. 5A to 6E, the light shielding plate 93 is placed on the light irradiation surface (first electrode layer) of the substrate 11 as illustrated in FIGS. 7A and 7B. 23, the surface on which the semiconductor layer 24 and the second electrode layer 25 are not formed). The light shielding plate 93 has an opening, and only the light irradiated on the substrate 11 through the opening enters the solar cell 20. On the other hand, the portion of the substrate 11 covered with the light shielding plate 93 and having no opening is not irradiated with light. Moreover, as shown to FIG. 7A, the width | variety of an opening part corresponds with the width | variety of the 2nd electrode layer 25 formed in the evaluation area | region, for example. Thus, by using the light shielding plate 93, only the minicell 20a is irradiated with light locally, and the local photoelectric conversion efficiency is measured.
Reference numerals 330A and 330B shown in FIGS. 7A and 7B represent probes (current-voltage characteristic measuring unit, measuring unit) such as a current-voltage measuring device. The first probe 330A is placed in contact with the evaluation region Rd in the minicell 20a. The second probe 330 </ b> B is disposed in contact with the conductive layer 92.
When current flows from the first probe 330A toward the second probe 330B, the current-voltage characteristics of the minicell 20a are locally measured.

<Second Embodiment of Solar Cell Evaluation Apparatus>
Next, a solar cell evaluation apparatus used in the evaluation method described with reference to FIGS. 5A to 7B will be described. The solar cell evaluation apparatus according to the second embodiment of the present invention includes a stacking apparatus that stacks a first electrode layer and a semiconductor layer in this order on a substrate, and a second electrode formation that forms a second electrode layer on the semiconductor layer. And a first removal device that forms a first removal portion on the second electrode layer along a predetermined evaluation region, and the first removal portion, the semiconductor along the first removal portion Removing a part of the layer and the first electrode layer, a second removal device for forming a second removal portion, and so as not to contact the second electrode layer and along the evaluation region A conductive layer forming part for forming a conductive layer for burying the second removal part; an insulating part for electrically insulating the evaluation area from the peripheral area; and the evaluation area electrically insulated from the peripheral area A light irradiating unit that irradiates only the light, and the evaluation region is irradiated with light. The evaluation region and in contact probe placement on the conductive layer when in, and a measuring unit for measuring a current-voltage characteristic in the evaluation region.

Here, the 2nd removal apparatus in 2nd Embodiment of the evaluation apparatus of a solar cell is the same as that of the said 1st removal apparatus and 2nd removal apparatus in 1st Embodiment of the evaluation apparatus of a solar cell. As the conductive layer forming part, an apparatus for forming a conductive layer such as solder is used. The light irradiation part in 2nd Embodiment of the evaluation apparatus of a solar cell is the same as the light irradiation part in 1st Embodiment of the evaluation apparatus of a solar cell. The measurement part in 2nd Embodiment of the evaluation apparatus of a solar cell is the same as the measurement part in 1st Embodiment of the evaluation apparatus of a solar cell.
Such an evaluation apparatus may further include an apparatus for removing the second electrode layer along the evaluation region. In that case, such an evaluation apparatus may be arrange | positioned in the position different from the position where the manufacturing apparatus of a solar cell is arrange | positioned, and may be integrated in the manufacturing apparatus of a solar cell.

DESCRIPTION OF SYMBOLS 10,20 ... Solar cell, 11 ... Board | substrate, 11a ... 1st surface (one surface of a board | substrate), 12 ... Photoelectric conversion body, 13, 23 ... 1st electrode layer, 14, 24 ... Semiconductor layer, 140a ... first groove, 140b ... second groove, 240a ... first removal part, 240b ... second removal part, 15, 25 ... Second electrode layer, 330 ... probe, 92 ... conductive layer, Rb ... evaluation region, Rd ... evaluation region

Claims (6)

1. A solar cell evaluation method,
   Preparing a substrate in which at least a first electrode layer and a semiconductor layer are laminated in this order;
   Forming a first groove by removing the semiconductor layer so as to surround a predetermined evaluation region in which photoelectric conversion efficiency is evaluated;
   By laminating the second electrode layer on the semiconductor layer in which the first groove is formed, the second electrode layer is buried in the first groove,
   In the inner region surrounded by the first groove in the direction parallel to the substrate, the semiconductor layer and the second electrode layer are removed to form a second groove, and the evaluation region is electrically connected to the peripheral region. Insulate,
   Irradiating light to a region including the evaluation region electrically insulated from the peripheral region;
   A method for evaluating a solar cell, comprising: measuring a current-voltage characteristic in the evaluation region when light is applied to a region including the evaluation region.
2. A method for evaluating a solar cell according to claim 1,
   The substrate and the first electrode layer have optical transparency,
   The first groove and the second groove are formed by irradiating the surface of the substrate opposite to the surface on which the first electrode layer is formed to form the first groove and the second groove. Method.
3. A solar cell evaluation method,
   Preparing a substrate in which at least a first electrode layer and a semiconductor layer are laminated in this order;
   Forming a second electrode layer on the semiconductor layer;
   Forming a first removal portion on the second electrode layer along a predetermined evaluation region where photoelectric conversion efficiency is evaluated;
   In the first removal portion, a second removal portion is formed by removing a part of the semiconductor layer and the first electrode layer along the first removal portion,
   Forming a conductive layer for burying the second removal portion so as not to contact the second electrode layer and along the evaluation region;
   Electrically insulating the evaluation area from the surrounding area;
   Irradiating only the evaluation region that is electrically insulated from the peripheral region;
   A method for evaluating a solar cell, comprising: arranging a probe in contact with the evaluation region and the conductive layer when the evaluation region is irradiated with light, and measuring a current-voltage characteristic in the evaluation region.
4. A solar cell evaluation device,
   A first laminating apparatus for laminating a first electrode layer and a semiconductor layer in this order on a substrate;
   A first removing device for forming a first groove by removing the semiconductor layer so as to surround a predetermined evaluation region;
   A second laminating apparatus for burying the second electrode layer in the first groove by laminating a second electrode layer on the semiconductor layer in which the first groove is formed;
   In the inner region surrounded by the first groove in the direction parallel to the substrate, the semiconductor layer and the second electrode layer are removed to form a second groove, and the evaluation region is electrically connected to the peripheral region. A second removal device that electrically insulates;
   A light irradiation unit that irradiates light to a region including the evaluation region electrically insulated from the peripheral region;
   A measurement unit for measuring a current-voltage characteristic in the evaluation region when light is irradiated to the region including the evaluation region;
   The evaluation apparatus of the solar cell characterized by including.
5. It is an evaluation apparatus of the solar cell of Claim 4, Comprising:
   The first removal device and the second removal device include a laser light source,
   The light irradiation unit includes a light source,
   The measurement unit includes a probe for detecting current or voltage,
   Any one or more of the laser light source, the light source, and the probe move independently above the solar cell.
6. A solar cell evaluation device,
   A laminating apparatus for laminating a first electrode layer and a semiconductor layer in this order on a substrate;
   A second electrode forming part for forming a second electrode layer on the semiconductor layer;
   A first removal device for forming a first removal portion on the second electrode layer along a predetermined evaluation region;
   In the first removal unit, a second removal device that forms a second removal unit by removing a part of the semiconductor layer and the first electrode layer along the first removal unit;
   A conductive layer forming part for forming a conductive layer for burying the second removal part so as not to contact the second electrode layer and along the evaluation region;
   An insulating portion that electrically insulates the evaluation region from a peripheral region;
   A light irradiation unit that irradiates light only to the evaluation region electrically insulated from the peripheral region;
   A measurement unit that measures a current-voltage characteristic in the evaluation region by placing a probe in contact with the evaluation region and the conductive layer when the evaluation region is irradiated with light;
   The evaluation apparatus of the solar cell characterized by including.

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