WO2011076044A1 - Procédé de fabrication de module à led - Google Patents

Procédé de fabrication de module à led Download PDF

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Publication number
WO2011076044A1
WO2011076044A1 PCT/CN2010/078791 CN2010078791W WO2011076044A1 WO 2011076044 A1 WO2011076044 A1 WO 2011076044A1 CN 2010078791 W CN2010078791 W CN 2010078791W WO 2011076044 A1 WO2011076044 A1 WO 2011076044A1
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WO
WIPO (PCT)
Prior art keywords
film
light
luminescent
curable adhesive
emitting
Prior art date
Application number
PCT/CN2010/078791
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English (en)
Chinese (zh)
Inventor
李哲祥
Original Assignee
永曜光电科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 永曜光电科技股份有限公司 filed Critical 永曜光电科技股份有限公司
Publication of WO2011076044A1 publication Critical patent/WO2011076044A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Definitions

  • the present invention relates to a method of fabricating a flip-chip light emitting diode module.
  • LED Light Emitting Diode
  • LED package also needs good heat dissipation and light extraction efficiency, especially in the aspect of heat dissipation. If the heat is not discharged in real time, hoarding The heat in the LED has a negative impact on its characteristics, service life and reliability.
  • the conventional lead frame package structure can be mainly subjected to procedures such as die bonding, wire bonding, and molding, and the light-emitting die includes a sapphire substrate, an N-type gallium nitride ohm contact layer, a light-emitting layer, and a P-type.
  • a gallium nitride ohm contact layer and a light-transmitting conductive layer, and a P-type electrode pad and an N-type electrode pad are respectively grown on the light-transmitting conductive layer and the N-type gallium nitride ohmic contact layer, wherein the solid crystal is first After one side surface of the sapphire substrate without the epitaxial layer is fixed on the lead frame by using a silver paste or a solder paste such as a high thermal conductivity solder paste or a gold tin solder, the both ends of the gold wire or the aluminum wire are thermally pressed.
  • this kind of packaging method makes the heat dissipation of the luminescent film often limited by the sapphire substrate with low heat dissipation coefficient, and the thickness thereof is thicker, and the overall heat transfer difficulty is further improved, and part of the light emitted by the luminescent layer must be made of a P-type electrode.
  • a manufacturer has improved the effective light-emitting area by using a Flip-Chip package, which is a sapphire of a gallium nitride-based light-emitting diode.
  • a buffer layer and an N-type gallium nitride ohmic contact layer are sequentially grown on the substrate, and a light-emitting layer and a P-type gallium nitride ohmic contact layer are grown in the center, and the P-type gallium nitride ohmic contact layer is
  • the P-type electrode pad is connected to the external heat-dissipating substrate, and the N-type electrode is grown on the two sides of the light-emitting layer, wherein an N-type electrode is connected to the external heat-dissipating substrate through the N-type electrode pad, because the main light-emitting surface is Unshielded light can increase the luminous efficiency of the LED; in addition, some companies can combine multiple illuminating dies on a gallium nitride (GaN) substrate or a silicon substrate, and silver can be used for the gallium nitride substrate or the silicon substrate.
  • GaN gallium nitride
  • the heat generated by the light-emitting diode can be quickly transmitted to the good heat dissipation coefficient by the electrode pad in the flip-chip structure through the gallium nitride substrate or the silicon substrate.
  • the material is dissipated to the outside, which can replace the sapphire substrate, improve the heat transfer effect, etc., and improve the overall package heat dissipation effect.
  • the material cost of this method is often much higher than that of the sapphire substrate, and the manufacturer still has cost considerations. The main use of sapphire substrates.
  • the LED manufacturing process can be divided into epitaxial forming, cutting, crystal selecting, filming, detaching, die attaching and flip-chip packaging processes, in which tens of thousands of luminescent crystal grains can be cut after epitaxial forming, and then classified.
  • the crystal is attached to the film (blue glue), and can be used as a wholesale optical grain stock, or can be subsequently separated from the film, and transported by a vacuum chuck to perform solid crystal bonding, adhesion, and coating of the subsequent light-emitting crystal grains.
  • the process of crystal encapsulation, etc. except that the detachment process uses the ejector pin of the separating device to push the film on the film to separate the illuminating die and the film one by one.
  • the metal material is made.
  • the thimble must be subjected to a large pushing force to separate the luminescent film from the film, and due to the epitaxial layer on the luminescent film (such as buffer layer, N-type GaN ohmic contact layer, The luminescent layer and the P-type GaN ohmic contact layer are relatively thin compared to the thickness of the sapphire substrate.
  • the pushing force is too large, or other parameters are poorly set, the epitaxial layer cannot be formed. From excessive impact energy (Impact Energy), which led to situations such as light-emitting grains rupture or damage occurs, the product defect rate will also increase significantly, while increasing costs on overall manufacturing.
  • the inventors have in view of the above known light-emitting diodes in which the illuminating die and the film are separated by the ejector pin. It is easy to cause problems and defects in the process of rupture or damage. Through the collection of relevant materials through multi-party evaluation and consideration, and the continuous trial and modification of the industry's many years of experience, the design of such flip-chip LED modules is designed. method.
  • An embodiment of the invention is a method of fabricating an LED module, the steps comprising: (a) preparing a film; (b) preparing a luminescent film; (c) applying a curable adhesive to the glue a side of the film, and the luminescent film is adhered to the film by the curable adhesive; (d) curing the curable adhesive and reducing the viscosity of the luminescent film adhered to the film; e) pushing the other side of the film to separate the light-emitting die and the film; and (f) packaging the light-emitting die to complete the light-emitting diode module.
  • the method further includes: (g) sequentially growing an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer on a wafer substrate before the step (a), thereby forming an epitaxial layer thereon. On the wafer substrate; (h) cutting the wafer substrate having the epitaxial layer into a plurality of single luminescent crystal grains; and (i) selecting one of the plurality of single luminescent dies cut by the step (h) The qualified luminescent crystal grains are obtained.
  • the step (f) comprises: using a vacuum nozzle or a suction cup of a conveying device to adsorb the separated illuminating crystal grains, and then conveying the separated illuminating crystal grains with a conductive colloid or a solder.
  • the circuit substrate is connected, and the predetermined circuit substrate can be a single-sided or double-sided circuit layout, wherein the light-emitting die is electrically connected to one or both sides of the predetermined circuit substrate in series or in parallel, and is coated.
  • the phosphor phosphor is colloided to the separated luminescent crystal grains, and a baking process is performed to treat the luminescent crystal grains.
  • Another embodiment of the present invention is a method of fabricating an LED module, the steps comprising: (a) preparing a film; (b) preparing a luminescent film; (c) applying a curable adhesive to the a side of the film, and the luminescent film is adhered to the film by the curable adhesive; and (d) curing the curable adhesive and reducing the viscosity of the luminescent film adhered to the film .
  • a light emitting diode module preform includes: a film, a light emitting die, and a side of a curable adhesive attached to the film, and is bonded by the curable adhesive The luminescent crystal grains are on the film.
  • FIG. 1 is a schematic view showing a change of a manufacturing state of an LED module according to an embodiment of the present invention
  • FIG. 2 is a schematic structural view of a thimble according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of a method for manufacturing an LED module according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram of a method for further manufacturing an LED module according to an embodiment of the present invention
  • FIG. 5 is a schematic diagram of a pre-material for an LED module according to an embodiment of the present invention.
  • FIG. 1 are respectively a manufacturing state diagram of the LED module of the present invention.
  • the state change of the flip-chip LED module of the present invention is: in the first state, it is through epitaxial Schematic diagram of a plurality of single LED chips 1 after forming, cutting, crystallizing, and filming.
  • the N-type semiconductor layer 12, the light-emitting layer 13 and the P-type semiconductor layer 14 are sequentially grown on the wafer substrate 11 of the light-emitting diode, and the surface of the P-type semiconductor layer 14 is grown with light-transmitting conductive After the layer (not shown), the portion of the transparent conductive layer An N-type electrode pad 121 and a P-type electrode pad 141 are grown on the surface.
  • the dicing process is to diced the wafer substrate having the epitaxial layer into the plurality of single luminescent crystal grains 1.
  • the crystallization process is to sort and pick up the applicable luminescent crystals 1.
  • a UV (ultraviolet) glue 3 is applied on the side surface of the film 2 to form a coating layer, and the plurality of light-emitting crystal grains 1 are adhered to the film 2 through the UV glue 3 to be integrated.
  • the second state it is a schematic diagram of UV (ultraviolet) exposure of the plurality of individual light emitting diode dies 1 .
  • the coating layer is irradiated onto the film 2 by a UV exposure machine, and is quickly dried by the UV glue 3, and the viscosity of the luminescent film 1 adhered to the film 2 can be reduced.
  • the third state it is a schematic diagram of the plurality of single LED die 1 .
  • the ejector pin 41 of the separating device 4 is pushed up on the other side surface of the film 2, so that the respective luminescent crystal grains 1 are separated from the film 2 one by one.
  • FIG. 2 it is a state of the ejector pin 41 of the separating device 4, and the ejector pin 41 can be of different types (such as a round head, a pointed head, etc.) depending on the size or weight of the illuminating die 1.
  • the suction nozzles 51 of the transport device 5 for transport. After the die is transported to the appropriate processing line, other processes such as die attach, lamp package, etc. can be performed.
  • the N-type electrode pad 121 and the P-type electrode pad 141 on the illuminating crystal 1 are respectively connected to the solder pad of the circuit substrate through the conductive paste or the solder, and the flip-chip LED module is formed. .
  • the latter combines the LED module with an external luminaire package. It can be seen from the above steps that the epitaxial layer 15 is grown on the substrate 11, that is, the N-type semiconductor layer 12, the light-emitting layer 13, and the P-type semiconductor layer 14 are sequentially grown on the substrate 11.
  • a light-transmissive conductive layer is grown on the surface of the P-type semiconductor layer 14 , and an N-type electrode pad 121 and a P-type electrode pad 141 are respectively grown on the surface of the light-transmitting conductive layer, but the portion of the epitaxial layer 15 is grown.
  • N-type semiconductor layer 12, light-emitting layer 13, and P-type semiconductor layer 14, etc. are grown by exposure, development, and metal lift-off (Liff-Off) techniques, such as N-type electrode pad 121, P-type electrode pad 141, etc.
  • the wafer substrate having the epitaxial layer can be cut into a plurality of individual light-emitting dies 1 and selected by Pick up) Applicable illuminating crystal 1;
  • Another UV adhesive 3 is applied to the adhesive film 2 - a coating layer is formed on the side surface, and the UV adhesive 3 is applied on the adhesive film 2 in a manner that the screen can be utilized.
  • Print Brush, roller type, spray type processing, etc., and the UV glue 3 can be UV Cure Resin or UV light curing polymer, and each of the luminescent crystal grains 1 can be transmitted through UV.
  • the glue 3 is adhered to the film 2 to be integrated and arranged in an equidistant arrangement or array.
  • the wholesale optical crystal 1 can be stocked or transported to a downstream manufacturer for subsequent packaging processes, and when the light-emitting die is used.
  • the luminescent film 1 needs to be detached from the film 2, and at this time, the UV glue 3 coating layer on the film 2 can be irradiated by UV (ultraviolet) light generated by the UV exposure machine. After exposure, the UV glue 3 is quickly dried and light-cured to reduce the viscosity of the luminescent film 1 adhered to the film 2, that is, the characteristics of the UV glue 3 material are changed to become hard and brittle, and the separation device 4 is reused.
  • the thimble (Push-up Needle, PUN for short) 41 is pushed up on the other side surface of the film 2, so that the thimble 41 made of metal material can be easily applied without a large pushing force.
  • Each of the light-emitting crystal grains 1 and the film 2 are separated one by one, and can also be effectively prevented If the position of the needle 41 is not good, the pushing force is too large, or other parameters are poorly set, the epitaxial layer 15 is subjected to excessive impact energy, which causes damage and damage of the structure of the luminescent crystal 1 and improves the product. Quality and yield, reducing the cost of manufacturing. Therefore, the vacuum nozzle 51 or the suction cup of the conveying device 5 can be used to adsorb to the illuminating crystal grain.
  • the circuit substrate is connected to each other, and the circuit substrate may be provided with a circuit layout on one or both sides, and each rectangular light-emitting die 1 is electrically connected to the circuit substrate in one or both sides through a circuit layout in series or in parallel.
  • the flip-chip light-emitting diode By forming a single-sided or double-sided light-emitting type, thereby completing the crystallizing and adhesion of the light-emitting crystal 1, and then performing the phosphor colloid coating and baking process of the light-emitting crystal 1, the flip-chip light-emitting diode can be formed.
  • the module then integrates the LED module into a package with an external luminaire (not shown).
  • the substrate 11 on the luminescent crystal 1 of the present invention may be transparent sapphire, silicon carbide (SiC), oxidized.
  • the N-type semiconductor layer 12 and the P-type semiconductor layer 14 may also be titanium, gold, titanium, aluminum, or one of or a combination of chromium, gold or chromium, aluminum, and sequentially grown on the substrate 11.
  • the N-type semiconductor layer 12, the light-emitting layer 13, and the P-type semiconductor layer 14 constitute an epitaxial layer 15, which only needs to provide the light-emitting crystal grains 1 to pass through.
  • the UV glue 3 When the UV glue 3 is adhered to the film 2, the UV light generated by the UV exposure machine can be irradiated to the UV glue 3 for exposure, and the UV film 3 can be light-cured to reduce the adhesion of the luminescent film 1 to the film 2
  • the viscosity of the top, the thimble 41 (shown in FIG. 2) of the separation device 4 can be different according to the size or weight of the illuminating crystal 1 (such as a round head, a pointed end, etc.), and is pushed to the top.
  • the thimble 41 easily breaks the thin N-type semiconductor layer 12, the luminescent layer 13, and the P-type semiconductor layer 14 of the epitaxial layer 15.
  • FIG. 3 is a schematic diagram of a method for manufacturing an LED module.
  • the method comprises: (a) preparing a film (step 301); (b) preparing a light-emitting die (step 303); (c) applying a curable adhesive to one side of the film, and passing the a curable adhesive is applied to the luminescent film on the film (step 305); (d) curing the curable adhesive and reducing the viscosity of the luminescent film adhered to the film (step 307); e) pushing the other side of the film, thereby separating the light-emitting die and the film (step 309); and (f) packaging the light-emitting die (step 311) to complete the light-emitting diode module.
  • the method for manufacturing the LED module further includes: (g) sequentially growing an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer on a wafer substrate before the step (a), thereby forming a An epitaxial layer is on the wafer substrate (step 313); (h) cutting the wafer substrate having the epitaxial layer into a plurality of single light-emitting dies (step 315); and (i) from the step ( h) selecting the qualified luminescent crystal grains from the plurality of dicing light-emitting dies that are cut (step 317).
  • the structure obtained in the foregoing steps may be integrated with the lamp through the external lamp packaging step (step 319). Please refer to FIG.
  • step (f) includes: using a vacuum nozzle or a suction cup provided in a conveying device to adsorb the separated illuminating crystal grains and then conveying them (step 401), and separating the illuminating crystal grains by a conductive colloid or a solder.
  • a predetermined circuit substrate Connected to a predetermined circuit substrate (step 403), and the predetermined circuit substrate can be a single-sided or double-sided circuit layout, wherein the light-emitting die is electrically connected to the preset circuit substrate in series or parallel manner.
  • FIG. 5 is a schematic diagram of the LED module pre-material.
  • the LED module pre-material comprises: a film 501, a light-emitting die 503, and a curable adhesive 505 connected to one side of the film, and the light-emitting die is adhered through the curable adhesive 503 is on the film 501.
  • Example 1 A method of fabricating an LED module, the steps comprising: (a) preparing a film; (b) preparing a luminescent film; (c) applying a curable adhesive to the film And affixing the luminescent film to the film by the curable adhesive; (d) curing the curable adhesive and reducing the viscosity of the luminescent film adhered to the film; Pushing the other side of the film to separate the light-emitting die and the film; and (f) packaging the light-emitting die to complete the light-emitting diode module.
  • Embodiment 2 The method of Embodiment 1, the method further comprising: (g) sequentially growing an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer on a wafer substrate before the step (a) Forming an epitaxial layer on the wafer substrate; (h) cutting the wafer substrate having the epitaxial layer into a plurality of single light-emitting dies; and (i) passing the step (h) Among the plurality of single luminescent crystal grains that are cut, the qualified luminescent crystal grains are selected.
  • the epitaxial layer of the step (g) further has a light-transmitting conductive layer on the surface of the P-type semiconductor layer, and the surface of the light-transmitting conductive layer is partially There is an N-type electrode pad and a P-type electrode pad respectively, and the wafer substrate can be transparent sapphire, silicon carbide, oxidized, magnesium oxide, gallium oxide, aluminum nitride, lithium gallium oxide, lithium aluminum oxide. Or spinel-based titanium, aluminum; chrome, gold or chromium, aluminum or one of them or a combination thereof.
  • the curable adhesive in the step (c) is a UV glue
  • the curing of the step (d) is exposed to UV light.
  • the UV glue is applied to cure the UV glue.
  • Embodiment 5 The method according to Embodiment 4, wherein the UV glue is a UV Cure Resin or an ultraviolet light curing polymer. And the UV light is generated by an exposure machine.
  • step (f) comprises: using a vacuum nozzle or a suction cup provided in a conveying device to adsorb the separated luminescent crystal grains and then transporting
  • the separate light emitting die is connected to a predetermined circuit substrate by a conductive paste or a solder, and the predetermined circuit substrate can be a single-sided or double-sided circuit layout for the light emitting die to be connected in series or in parallel
  • the method is electrically connected to one or both sides of the preset circuit substrate, coating a phosphor colloid on the separated light emitting die, and performing a baking process to process the light emitting die.
  • the package of step (f) is a flip chip package, and the light emitting diode module can be integrated with the external lamp package.
  • the method for manufacturing the LED module comprising: (a) preparing a film; (b) preparing a light-emitting die; (c) applying a curable adhesive to one side of the film, and bonding the luminescent film to the film by the curable adhesive; and (d) curing the curable adhesive and lowering the The viscosity of the luminescent film adhered to the film.
  • Embodiment 11 According to the method of any of Embodiments 1 - 10, it is further possible for a light emitting diode module preform to include: a film, a light emitting die, and a curable adhesive connection.
  • the luminescent film is attached to the film by the curable adhesive.
  • the method for manufacturing the above-described flip-chip type light-emitting diode module of the present invention can achieve its efficacy and purpose when used. Therefore, the present invention is an invention with excellent practicability, and is an application for conforming to the invention patent. To file an application, I hope that the trial committee will grant the case as soon as possible to protect the inventor's hard work. If there is any doubt in the trial committee, please do not hesitate to give instructions, the inventor will try his best to cooperate and feel polite.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention se rapporte à un procédé de fabrication d'un module à LED. Le procédé selon l'invention comprend les étapes consistant : (a) à préparer une couche mince adhésive; (b) à préparer un grain photoémetteur; (c) à appliquer un adhésif polymérisable sur l'un des côtés de la couche mince adhésive, et à faire adhérer le grain photoémetteur à la couche mince adhésive par le biais de l'adhésif polymérisable; (d) à faire durcir l'adhésif polymérisable et à réduire la viscosité adhésive entre le grain photoémetteur et la couche mince adhésive; (e) à pousser l'autre côté de la couche mince adhésive de sorte à séparer le grain photoémetteur de la couche mince adhésive; et (f) à encapsuler le grain photoémetteur et à réaliser le module à LED. Ces étapes du procédé selon l'invention comprennent par ailleurs les étapes consistant : (g) préalablement à l'étape (a), à mettre en croissance, dans cet ordre, une couche semi-conductrice de type N, une couche photoémettrice et une couche semi-conductrice de type P sur un substrat de tranche, de sorte à former ainsi une couche épitaxiale sur le substrat de tranche; (h) à faire durcir le substrat de tranche avec la couche épitaxiale dans une pluralité de grains photoémetteurs individuels; et (i) à sélectionner des grains photoémetteurs qualifiés parmi la pluralité de grains photoémetteurs individuels acquise à l'étape (h).
PCT/CN2010/078791 2009-12-23 2010-11-16 Procédé de fabrication de module à led WO2011076044A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2009102619674A CN102110747A (zh) 2009-12-23 2009-12-23 倒装芯片式发光二极管模块的制造方法
CN200910261967.4 2009-12-23

Publications (1)

Publication Number Publication Date
WO2011076044A1 true WO2011076044A1 (fr) 2011-06-30

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WO (1) WO2011076044A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103441101A (zh) * 2013-08-28 2013-12-11 中国科学院半导体研究所 全彩发光二极管模组的制备方法
CN104485327B (zh) * 2014-12-11 2017-08-01 杭州杭科光电股份有限公司 一种led光源和led发光模组的制备方法
CN105324022A (zh) * 2015-09-21 2016-02-10 厦门三安光电有限公司 一种芯粒抓取装置及其抓取方法
CN108565324B (zh) * 2018-01-05 2019-11-08 苏州芯脉智能电子科技有限公司 一种led灯的制作方法及led灯
CN112349642A (zh) * 2019-08-07 2021-02-09 亿光电子(中国)有限公司 一种电子元件颗粒的剥离装置
CN111293197A (zh) * 2020-03-02 2020-06-16 宁波升谱光电股份有限公司 一种倒装led芯片固晶方法和led
CN113764546A (zh) * 2021-08-30 2021-12-07 东莞市中麒光电技术有限公司 一种Mini-LED器件、LED显示模块及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1503320A (zh) * 2002-11-27 2004-06-09 先进自动器材有限公司 薄晶粒分离装置与方法
US20040173322A1 (en) * 2003-03-05 2004-09-09 Pang-Chieh Yen Apparatus for removing an adhesive film on a chip
CN1621211A (zh) * 2003-11-24 2005-06-01 陈新发 改善切割晶片良率的固定方法
CN101226982A (zh) * 2008-01-31 2008-07-23 鹤山丽得电子实业有限公司 一种发光二极管及其制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1503320A (zh) * 2002-11-27 2004-06-09 先进自动器材有限公司 薄晶粒分离装置与方法
US20040173322A1 (en) * 2003-03-05 2004-09-09 Pang-Chieh Yen Apparatus for removing an adhesive film on a chip
CN1621211A (zh) * 2003-11-24 2005-06-01 陈新发 改善切割晶片良率的固定方法
CN101226982A (zh) * 2008-01-31 2008-07-23 鹤山丽得电子实业有限公司 一种发光二极管及其制造方法

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