WO2011071483A1 - Photomultiplicateurs au silicium rétroéclairés : structure et procédés de fabrication - Google Patents

Photomultiplicateurs au silicium rétroéclairés : structure et procédés de fabrication Download PDF

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Publication number
WO2011071483A1
WO2011071483A1 PCT/US2009/067043 US2009067043W WO2011071483A1 WO 2011071483 A1 WO2011071483 A1 WO 2011071483A1 US 2009067043 W US2009067043 W US 2009067043W WO 2011071483 A1 WO2011071483 A1 WO 2011071483A1
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WO
WIPO (PCT)
Prior art keywords
regions
substrate
matrix
photomultiplier
conductivity type
Prior art date
Application number
PCT/US2009/067043
Other languages
English (en)
Inventor
Alexander O. Goushcha
Original Assignee
Array Optronix, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Array Optronix, Inc. filed Critical Array Optronix, Inc.
Priority to PCT/US2009/067043 priority Critical patent/WO2011071483A1/fr
Publication of WO2011071483A1 publication Critical patent/WO2011071483A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers

Definitions

  • SiPM silicon photomult iplier
  • PMT photomult iplier tubes
  • a silicon photomult iplier is a device, which is in fact a large number of small SPAD (single photon avalanche diode) pixels, connected in parallel to a single output circuit.
  • SPAD single photon avalanche diode
  • the detailed description of the conventional device is presented in several recent works which describe the front illuminated device. Its operation is based on the idea that very small SPAD pixels, if assembled in a dense, two- dimensional (2D) array, can be fired separately by a single photon each. Therefore, the overall signal output is proportional to the number of pixels fired at a time and the dynamic range of such 2D array of m elements is proportional to m.
  • each pixel can be either a regular reach-through structure built on a p-type substrate (as it is shown in Figure 1), or the other possible version that does not require reach-through effect.
  • the structure built on n-type substrate with a buried p+ layer can be applied.
  • the operating voltage is several volts above the avalanche threshold, which drives each pixel in a Geiger operation mode.
  • the structure in Figure 1 is built using a p-type substrate 1 with a thin epi layer 2.
  • avalanche pixels are represented by the cathode diffusion region 3 and avalanche region 4.
  • the substrate 1 serves as the anode.
  • the junction depth 1 is small enough to maximize quantum efficiency in the short wavelength range.
  • the photo- generated carriers can be collected either from the avalanche region 4 solely, or from both the avalanche region 4 and depleted intrinsic layer w.
  • Two pixels of SiPM shown in Figure 1 can be fired simultaneously by two different photons.
  • the narrow trenches 10 are made between the pixels to block the photons generated within the avalanche area of one pixel against reaching the neighboring pixels.
  • Oxide layer 11 with Si interface forms a reflective and isolation layer.
  • the trenches may be filled with light absorptive material.
  • Each pixel is loaded with a resistive layer 12 that quenches the avalanche when the pixel photocurrent exceeds a certain level. The quenching time is important parameter since it determines the pixel recovery time.
  • the cathode metal contacts 20 from each pixel of SiPM are connected together and are hooked to the SiPM front-end electronics (not shown in Figure 1) .
  • the back surface of SiPM is coated with metal 21 that serves as the anode contact.
  • each pixel can be made very small (thin epi-layer d in Figure 1), the thermally generated noise current can be minimized to the level when it does not interfere with detection of optical photons.
  • SiPM Back-illuminated versions of SiPM may provide
  • back-illuminated detectors have inherently higher quantum efficiency at the short wavelengths of light and FF is not limited by the resistive layer and metal traces, which are deposited opposite to the light incident surface of the device.
  • the example of the back- illuminated SiPM integrated with Si drift detector is
  • Figure 1 is a schematic cross-section of the
  • Figure 2 is comprised of schematics of a typical back- illuminated Si drift detector integrated with SiPM.
  • Figure 3 is a schematic cross-section of the back- illuminated SiPM in accord with the current invention.
  • Figure 4 is a schematic cross-section of the alternative version of the back-illuminated SiPM with the buried n++ layer and via interconnections extending from the buried layer to the die front side.
  • the current invention proposes the back-illuminated SiPM structure that combines the advantages of the conventional structures described above, but at the same time is free of the conventional structure drawbacks.
  • FIG 3 shows schematically two pixels of the present invention design and describes the main features of the structure.
  • SiPM is made using thin p-type Si substrate 1.
  • the thin substrate may be made either with thinning in the middle of the process after the front side diffusion is done or starting with a thinned wafer - typically depending on the availability of suitable fabrication processes.
  • the cathode diffusion 3 is made from the front side and is driven deep to make the junction close to the back surface of the die.
  • the cathode can be made utilizing the buried n++ layer and via interconnections extending to the die front side (see Figure 4) .
  • the buried layer 3 in Figure 4 can be manufactured applying molecular beam epitaxy.
  • Via connections 7 in Figure 4 may be made using dry etch methods followed by via filling with a conductive material. The other traditional techniques for via interconnects may also be allied.
  • the avalanche p+ layer 4 is implanted from the backside, typically made using high energy ion implantation. For example, one can make a boron implantation ⁇ 2 microns deep into the surface from the backside using 1.1. MeV Boron beam. This layer may either touch the cathode n++ region 3 or may lay underneath it (isolated avalanche region structure) . The width of the avalanche layer and the intrinsic layer width w are both small (several microns) to minimize the volume of thermally generated carriers' collection.
  • a thin, uniform anode diffusion region 6 is formed on the die backside. This region may be electrically connected with the die front side via the through p++ diffusion region 5 at the edge of the die. Oxide layer 11 on the die backside serves as active area anti-reflection layer and isolation layer. Trenches 10 between the pixels of SiPM are made on the die backside.
  • the avalanche quenching resistive layer 12 is connected to each pixel and signals from each pixel are routed through the cathode metal contacts 20 to the front-end electronics.
  • the common anode metal contact 21 may be made on the front surface to allow for the flip-chip die attach.
  • the common anode contact may be made on the edge of the die backside, which allows wire bonding of the anode to the substrate.
  • the structures in Figures 3 and 4 operate at a complete depletion condition.
  • the depletion region penetrates the avalanche region 4 and extends through the "intrinsic" ⁇ region to the die backside.
  • This structure is characterized with a high quantum efficiency value within the wide
  • wavelength range including ⁇ 500 nm. It also ensures fast response time and may provide larger fill-factor than front- illuminated structures of Figure 1.
  • the depth of the trenches is made sufficiently deep to block all optical photons from penetration the avalanche region from neighboring pixels' avalanche regions.
  • the substrate is a p substrate, which may be near intrinsic.
  • the substrate is a p substrate, which may be near intrinsic.
  • conductivity types can be reversed for the devices in which the ionization rate for holes is higher than that for

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'invention porte sur des photomultiplicateurs au silicium rétroéclairés comprenant un substrat d'un premier type de conductivité ayant des côtés avant et arrière, une matrice de régions d'un second type de conductivité dans le substrat, une matrice de régions du premier type de conductivité sous la matrice de régions du second type de conductivité et adjacente au côté arrière du substrat, la partie inférieure de la matrice de régions du second type de conductivité formant une jonction P/N avec le substrat ou une matrice de régions du second type de conductivité, la matrice de régions du premier type de conductivité ayant une plus forte conductivité que le substrat, et une anode commune formée par une couche uniforme du premier type de conductivité de plus forte conductivité que le substrat sur le côté arrière du substrat. De préférence, une pluralité de tranchées remplies d'un matériau opaque sont formées dans le côté arrière du substrat, le substrat ayant de préférence une épaisseur inférieure à environ 150 µm.
PCT/US2009/067043 2009-12-07 2009-12-07 Photomultiplicateurs au silicium rétroéclairés : structure et procédés de fabrication WO2011071483A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US2009/067043 WO2011071483A1 (fr) 2009-12-07 2009-12-07 Photomultiplicateurs au silicium rétroéclairés : structure et procédés de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2009/067043 WO2011071483A1 (fr) 2009-12-07 2009-12-07 Photomultiplicateurs au silicium rétroéclairés : structure et procédés de fabrication

Publications (1)

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WO2011071483A1 true WO2011071483A1 (fr) 2011-06-16

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013009615A1 (fr) * 2011-07-08 2013-01-17 Excelitas Technologies LED Solutions, Inc. Photodiode à avalanche à rayonnement ultraviolet à comptage de photons
WO2021149650A1 (fr) * 2020-01-21 2021-07-29 パナソニックＩｐマネジメント株式会社 Photocapteur et système de mesure de distance

Citations (3)

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Publication number Priority date Publication date Assignee Title
US20080173903A1 (en) * 2006-12-28 2008-07-24 Fujifilm Corporation Solid-state image pickup element
US20080224181A1 (en) * 2007-03-14 2008-09-18 Shinji Uya Back irradiating type solid state imaging device
US20080297634A1 (en) * 2007-05-31 2008-12-04 Shinji Uya Image pickup device, method of producing image pickup device, and semiconductor substrate for image pickup device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080173903A1 (en) * 2006-12-28 2008-07-24 Fujifilm Corporation Solid-state image pickup element
US20080224181A1 (en) * 2007-03-14 2008-09-18 Shinji Uya Back irradiating type solid state imaging device
US20080297634A1 (en) * 2007-05-31 2008-12-04 Shinji Uya Image pickup device, method of producing image pickup device, and semiconductor substrate for image pickup device

Non-Patent Citations (3)

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Title
CLAUDIO PIEMONTE ET AL: "Characterization of the First Prototypes of Silicon Photomultiplier Fabricated at ITC-irst", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE SERVICE CENTER, NEW YORK, NY, US LNKD- DOI:10.1109/TNS.2006.887115, vol. 54, no. 1, 1 February 2007 (2007-02-01), pages 236 - 244, XP011163938, ISSN: 0018-9499 *
MCNALLY D ET AL: "Review of solid state photomultiplier developments by CPTA and photonique SA", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION A (ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT), vol. 610, no. 1, 21 October 2009 (2009-10-21), ELSEVIER SCIENCE B.V. NETHERLANDS, pages 150 - 153, XP002597534, ISSN: 0168-9002, DOI: 10.1016/J.NIMA.2009.05.140 *
SCIACCA E ET AL: "Arrays of Geiger mode avalanche photodiodes", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 18, no. 15, 1 August 2006 (2006-08-01), IEEE USA, pages 1633 - 1635, XP002597535, ISSN: 1041-1135, DOI: 10.1109/LPT.2006.879576 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013009615A1 (fr) * 2011-07-08 2013-01-17 Excelitas Technologies LED Solutions, Inc. Photodiode à avalanche à rayonnement ultraviolet à comptage de photons
US8368159B2 (en) 2011-07-08 2013-02-05 Excelitas Canada, Inc. Photon counting UV-APD
WO2021149650A1 (fr) * 2020-01-21 2021-07-29 パナソニックＩｐマネジメント株式会社 Photocapteur et système de mesure de distance

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