WO2011070249A1 - Dispositif de couplage d'une onde électromagnétique entre un guide d'onde et un guide métallique à fente, procédé de fabrication dudit dispositif, et coupleur optique et électrique d'un objet utilisant le dispositif de couplage optique - Google Patents
Dispositif de couplage d'une onde électromagnétique entre un guide d'onde et un guide métallique à fente, procédé de fabrication dudit dispositif, et coupleur optique et électrique d'un objet utilisant le dispositif de couplage optique Download PDFInfo
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
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- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
Definitions
- the size of the electronic components is constantly decreasing, allowing the increase of the integration density of these components on the same chip.
- the coupling efficiency is substantially equal to the ratio between the optical mode surface carried by the waveguide and the characteristic surface of the device to be addressed.
- the slot 4 thus delimited is substantially coaxial with the central axis of the elements forming the silicon guide 1 a, 1 b, where the amplitude of the electromagnetic field generated by the wave is maximum.
- a device is complex to manufacture because it requires a perfect fit of the different elements put end-to-end.
- This structure forms a resonant device whose transmission rate is very sensitive to the incident wavelength.
- such a device induces a reflection problem, in fact, a portion of the incident wave moves in the silicon guide 1a and is transmitted in the silver guide 2 but another is reflected.
- a coupling is not satisfactory because it induces a significant decrease in the efficiency of the coupling of the electromagnetic wave.
- An object of the invention is to provide a compact and efficient coupling between a waveguide and a slot metal guide.
- This object is attained by the appended claims and more particularly by the fact that the slotted metal guide is formed by two coplanar metal elements spaced from one another so as to define the slot, and in that the guide slit metal is disposed in a plane offset from the plane of the waveguide and partially overlaps said waveguide, said waveguide and slot guide being kept at a distance from each other by a dielectric.
- the invention also relates to an optical and electrical coupler of an object, said coupler comprises an optical coupling device and an electric coupling element provided with two electrodes arranged at the slot of the slot guide, said object being in contact with at least one of the electrodes.
- Figure 1 illustrates a coupling device according to the prior art.
- FIG. 2 illustrates the coupling device of FIG.
- Figure 3 illustrates the coupling device of Figure 1 in a C-C section.
- Figure 4 illustrates respectively the propagation of a TM component
- FIG. 5 illustrates a view from above of an embodiment according to the invention.
- FIG. 6 illustrates a sectional view along A-A of FIG. 5.
- Figure 7 illustrates another embodiment of a device according to the invention.
- FIG. 8 illustrates representative curves of the evolution of the effective index as a function of the width of a silicon waveguide.
- FIG. 9 illustrates another embodiment of the invention.
- FIG. 10 illustrates a side view of the device of FIG. 9.
- FIG. 11 illustrates another embodiment of the invention.
- Figures 12 to 16 illustrate a method of manufacturing a device according to the invention.
- FIGS 17 to 19 illustrate two embodiments of an optical and electrical coupler of an object.
- this wave when an electromagnetic wave also called in this optical wave domain (for a range of wavelengths ranging from visible to near and intermediate infrared) propagates along a longitudinal axis of the waveguide 1 as indicated by the wave vector k, this wave is decomposed into two states of polarization.
- a first state forms a transverse electrical component (TE "Transverse Electric” in English) and a second state forms a transverse magnetic component (TM for "Transverse Magnetic”).
- the TM component comprises an electric field E perpendicular to the plane of the guide and a magnetic field H parallel to the plane of the guide.
- the TE component comprises a magnetic field H perpendicular to the plane of the guide and an electric field E parallel to the plane of the guide.
- the device for coupling an electromagnetic wave comprises a waveguide 1, for example formed by a waveguide.
- silicon which may be in the form of a ribbon.
- a waveguide may be a type III or IV material or an alloy of these types of materials such as InP, GaS, InGaS.
- the waveguide 1 is transparent to the wave considered.
- the waveguide 1 may be a partially engraved (guide stops) and / or locally structured planar guide for containing, for example, networks for coupling the waveguide 1 to an optical fiber.
- the coupling device further comprises a slotted metal guide 2, preferably formed by two metallic elements 3a, 3b coplanar and spaced from each other so as to form said slot 4.
- the elements metal 3a, 3b may be formed of silver or copper.
- the slotted metal guide 2 is disposed in a plane P2 offset from the plane P1 of the waveguide 1 and partially overlaps said waveguide 1 ( Figure 6). This overlap allows the interaction of the evanescent fields of the two guides to achieve the coupling.
- the two guides 1, 2 are kept at a distance from one another by a dielectric for limiting the reflection, diffusion or absorption of the wave.
- the waveguide 1 and the slotted metal guide 2 can be separated by an interval D 1.
- the dielectric may be in the form of a layer on the one hand in contact with the waveguide 1, and on the other hand in contact with the slotted metal guide 2, it can therefore have a thickness equal to Di. This dielectric may be a silicon oxide layer.
- the dielectric material used may have a low refractive index with respect to the refractive index of the silicon guide.
- this refractive index is between 1 and 2.5, and best confers the optical wave in the waveguide 1 to prevent the latter from diffusing outside said waveguide 1.
- the waveguide may have, by way of example, an index of the order of 3.55.
- an electromagnetic wave propagates in a guide, a part of this wave penetrates into the surrounding medium, thus generating a so-called evanescent field. This length of penetration is proportional to the ratio of refractive index of the guide and its surrounding environment.
- the waveguide 1 consists of a single ribbon element, preferably made of silicon.
- the metal slotted guide 2, for example made of silver, is formed by two metallic elements 3a, 3b, coplanar, and spaced from each other so as to delimit said slot 4.
- the slot 4 is preferably oriented along a longitudinal axis A1 of the waveguide 1.
- the slot 4 is centered so that it lies in a plane perpendicular to the plane of the waveguide 1 and passing through its center, the intersection of the two planes then forms the longitudinal axis A1 of the waveguide 1.
- the slotted metal guide 2 is arranged above the waveguide 1 so that the slotted metal guide 2 partially covers the waveguide 1.
- the waveguide 1 consists of two elements 1a and 1b which are not made on the same axis, the slotted metal guide 2 is then curved to connect the two elements 1 a and 1 b.
- the two elements 1a and 1b are spaced apart from each other and their longitudinal axes are perpendicular.
- the electromagnetic field in the slotted guide being transverse, only the eigenmodes of the polarized waveguide 1 TE are coupled, that is to say that only the TE component propagates in the guide to slot 2 while the TM component remains confined to the waveguide 1.
- the coupling device is also called co-directional coupler.
- the coupling is performed between the fundamental modes (of higher effective index) TE of the two guides, this mode coupled to slotted metal guide 2 allows a confinement of the coupling in the slot of said slot guide 2.
- the power density obtained in the slot guide 2 is then exacerbated of the order of 100.
- the use of evanescent fields makes it possible to increase the efficiency of the coupling with respect to the end-to-end coupling of the prior art.
- the coupling mechanism between the waveguide 1 and the slot metal guide 2 can be illustrated using equations obtained in a perturbative approach of the Maxwell equations, for a simplified system where the two guides are identical. These equations will be sufficient to translate the propagation of the wave in a coupled system and the parameters that influence this coupling. A thorough description is made by A.Yariv in "coupled mode theory for guided wave optics", IEEEJ. As. Elec. 9, 919, 1973.
- the waveguide 1 and the slot metal guide 2 may be single-mode or multi-mode depending on the width and / or the height of the waveguide 1 and the width and / or thickness (or height) of the metallic elements 3a, 3b of the slot metal guide 2. It is also possible to play over the width of the slot to make a selection of mode (s) to be coupled and thus form a mode filter (s) .
- a mode of the waveguide 1 and a mode of the slotted metal guide 2 have the same effective index and are coupled.
- a mode corresponds to a spatial configuration of the electromagnetic field induced by the propagation of an electromagnetic wave in the guide associated with said mode. According to the distribution of the electromagnetic field, a given mode sees a different index of the materials constituting the guide and the index seen by each mode defines an effective index.
- An effective index can be defined as the ratio of the wavelength in the vacuum to the wavelength in the medium to be crossed.
- the optimum coupling efficiency (F) is defined as the fraction of power transmitted from a first guide to a second guide after a characteristic distance L c also called effective coupling length:
- ⁇ is the operating wavelength (wave moving in the coupling device)
- An eff L is the difference between the effective indices of the modes supported by the guides in the absence of coupling. These modes are called local modes.
- & n effS is the difference between the effective modes indices (called supermodes) supported by the coupling structure comprising the two juxtaposed guides (waveguide and slot metal guide). These two supermodes are by construction of opposite symmetry. This is called symmetric and antisymmetric supermodes. This physical quantity is dependent on the interval Di which separates the two guides. This distance Di conditions the coupling length L c as well as the transferred power rate.
- the efficiency of the coupling can be improved as a function of the distance separating the waveguide 1 from the slotted metal guide 2, their effective indices, the length of the slotted metal guide 2 or the partial overlap length between the guides.
- the ratio of the effective index of the waveguide 1 to the effective index of the slotted metal guide 2 is between 0.8 and 1, 2, and preferably equal to 1.
- the effective index of a mode may vary depending on the dimensions (width and thickness) of the guide considered, such variation is described in "Silicon photonics" Reed, GT, Knights, AP, ed. Wiley (2004).
- the effective index of a first guide it is possible to fix the effective index of a first guide, then to adjust the geometric dimensions of a second guide to couple with the first to obtain an effective index agreement between the eigen modes of each of the guides.
- the effective index of the modes supported by these guides can be calculated numerically by a mode solver by using the FDTD method (for finite-difference frequency-domain in English).
- the geometry, and thus the effective index n e ", of the slot guide 2 is set.
- the dimensions of the silicon waveguide 1 will be characterized by fixing, for example, its height, and by varying its width to obtain an effective index substantially equal to that of the slot metal guide 2.
- the effective index of the guide metallic slit 2 depends on the width of the slot 4, the height hi of the slot 4 ( Figure 6) and the type of material used.
- the slot metal guide 2 is made of silver
- the width h of the slot 4 is 25 nm
- the height hi of the slot 4 is 50 nm
- the effective index of such a guide is fixed at 2.25 in Figure 8 (Ag curve). In this FIG.
- FIG. 8 makes it possible to determine a point of intersection of the curves Ag and Si in which the effective indices of the two guides are equal. So, for the silver slot metal guide 2 previously described, the preferential width of the associated silicon guide is 410 nm.
- the width of the silicon waveguide 1 thus depends on the effective index of the slot metal guide 2. This width of the silicon guide 1 will be different if the metal of the slot guide is changed or if the dimensions of the slot 4 vary.
- the interval Di separating the two guides 1, 2 is adjusted to optimize the length and the coupling efficiency.
- the equation (1) is equal to one and the interval Di influences only the coupling length Le and therefore the compactness of the device.
- the graph in FIG. 8 illustrates the variations of the effective indices of the even and odd supermodes of the structure as a function of the width of the silicon guide.
- the curves C1, C2, C3, C4 are respectively associated with the distances 250nm, 150nm, 100nm, and 50nm in the odd supermode and the curves C1 ', C2', C3 ', C4' are respectively associated with the distances 250nm, 150nm, 100nm , and 50nm in the even supermode. Reading the graph obtained in FIG. 8 makes it possible to determine that the closer the guides are, the greater the effective index difference between the even and the odd supermodes at the point of intersection.
- the coupling constant is all the greater as the effective index difference between the even and odd supermodes is important, in agreement with the relation previous (1).
- a low interval Di equivalent to an effective index difference of the large supermodes, is therefore preferable for increasing the efficiency of the coupling.
- the greater the effective index difference the greater the strength or coupling power increases.
- a small interval is therefore preferable to increase the efficiency of the coupling.
- the interval Di separating the two guides has a minimum of 10 nm and a maximum of the order of the working or operating wavelength, that is to say function of the length of the wavelength. wave that one seeks to couple.
- the separation interval could be zero and the guides in contact.
- Such contact between the two guides would generate a diffraction of the electromagnetic wave, and thus a loss of coupling efficiency.
- contacting the slot metal guide 2 with the silicon waveguide 1 could contaminate the optical properties by migration of the metal species in the silicon guide.
- the partial overlap length L r of the waveguide 1 by the slot metal guide 2 is an odd multiple of an effective coupling length Le (equation (2)) between the two guides 1, 2
- the overlap length will preferably be equal to the coupling length or more generally to an odd multiple (2n + 1) * Lc for transmitting the electromagnetic wave from one guide to the other, with n a positive integer or no.
- the use of a slotted metal guide 2 whose total length is equal to the overlap length which is an odd multiple of the coupling length advantageously allows it to confine the TE component in the slot metal guide 2. , the TE component is found in the slotted guide 2 and the TM component continues to propagate in the waveguide 1.
- the coupling length and coupling efficiency can also be optimized by a parametric study performed using numerical simulations using for example the finite-difference frequency-domain (FDTD) method.
- This numerical method is used to simulate the propagation of electromagnetic waves in structures.
- the procedure of the example uses a Gaussian beam generated in the silicon ribbon guide 1 and propagating along k.
- the working wavelength was chosen around 1550nm.
- the coupling length Le for which 75% of power is transmitted to the slot metal guide 2 is equal to ⁇ , ⁇ . It reflects a great difference in index of the two supermodes, that is to say a great coupling force which consequently allows a high compactness of the device.
- the waveguide is formed by two elements 1a, 1b, preferably aligned along the same axis.
- the slotted metal guide 2 is arranged so as to cover partially two proximal portions 1a, 1b of said elements over lengths LM and U2. This makes it possible to produce a first coupling between the element 1a of the waveguide and the slotted metal guide 2 in the direction of propagation k of the electromagnetic wave, and then a second coupling between the slotted metal guide 2 and the slotted metal guide 2.
- 1b element of the waveguide According to one embodiment, only the TE components pass through the slot guide, the latter are the only ones to be coupled during the second coupling.
- the overlap lengths L r i and 2 of the waveguide by the slot guide 2 at each element portion 1 a, 1 b are respectively equal to an odd multiple of the effective coupling length L e -
- the methods for determining the effective coupling length L c previously described apply to this embodiment.
- the two proximal portions may optionally be thinned to reduce the section of the waveguide so that the signal not coupled to the slot metal guide 2 is not reflected by the end of the waveguide.
- the coupling device may, in addition to allowing the coupling of the two guides, be used to produce optoelectronic components (detectors, emitters, nonlinear optical components) depending on the nature of the medium constituting the slit of the slotted metal guide 2.
- optoelectronic components detecttors, emitters, nonlinear optical components
- the use of a slot metal guide 2 allows, depending on the application, to use the two metal elements 3a, 3b constituting it as electrodes for, for example, detecting or applying a voltage difference across said slot.
- the application of a voltage makes it possible, for example, to modulate the index of the material (for example SiOx) contained in the slot, that is to say between the two metallic elements 3a, 3b coplanar.
- Another application may be the detection or the stimulated emission of sub-micronic objects such as nano-wires, nano-antennas, quantum boxes, etc.
- TE components of the electromagnetic wave confined in the slot guide 2 can converge more easily to an object of a few nanometers placed in said slot.
- the metal elements 3a, 3b of the slot guide 2 can form electrodes able to apply a stimulus or to measure values.
- the slot may also be filled with a material having particular optical properties such as non-linearity with materials of the SiOx type (silica loaded with silicon nanocrystals) or of the polymer type.
- the material may also have emission properties and be SiOx type (Silicon nanocrystal-loaded silica) doped with Erbium ions or the III-V family (AsGa or InP).
- the material may also have modulation properties and be of the BST or PZT type (ferroelectric materials which possess piezoelectric properties).
- the slot can be filled by a non-linear material, a material with emission properties or a material with modulation properties.
- Such a separating device comprises a first waveguide 1a coupled to a first slotted metal guide 2a.
- the overlap length L r i of the first slotted metal guide 2 a on the first waveguide 1 a is an odd multiple of the coupling length, thus making it possible to confine the TE component in the first slotted metal guide 2 a.
- the waveguide 1a is continuous and the overlap length L r i is equal to the length Lf of the first slotted metal guide 2a.
- the first slot guide 2a is coupled to a second slot guide 2b itself coupled to a second waveguide 1b.
- the overlap length L r 2 of the second waveguide by the slot guide is preferably equal to an odd multiple of the coupling length Le to allow the transfer of the TE component in the second waveguide 1 b.
- the electromagnetic wave can be brought into the coupling device by an optical fiber either by the network method, or by the typing method.
- the waveguide 1 has a plurality of ribs on its surface, each rib preferably being perpendicular to the longitudinal axis of the waveguide.
- the optical fiber is oriented in a direction close to normal to the plane containing the ribs, that is to say the plane of the guide.
- the waveguide 1 comprises, for example, a divergent or convergent end (inverted tap) abutting with the optical fiber in the plane of the guides.
- a divergent or convergent end inverted tap
- a method of producing a coupling device illustrated in FIGS. 12 to 16 comprises, on a substrate, the following successive steps:
- a slotted metal guide 2 (FIGS. 15 and 16) in a plane offset from the plane of the waveguide 1 so that the slotted metal guide partially covers the waveguide 1 and the slot 4 is delimited by two metallic elements 3a, 3b coplanar.
- the slot 4 of the slot guide 2 is oriented along a longitudinal axis A1 of the waveguide.
- the offset can be achieved via a dielectric material.
- the dielectric material 8 is preferably silicon oxide (FIG. 14).
- Low index means a material whose refractive index is between 1 and 2.5. This encapsulation allows in particular to shift the two guides from one another and to participate in the formation of the slotted metal guide 2.
- the coupling device may advantageously be produced as illustrated in FIG. 12 from a substrate 5 of the SOI type (silicon 6 on insulator 7).
- the step of forming the waveguide 1 is performed by partial or total etching of the upper layer 6 of silicon.
- total etching is meant the etching of the upper silicon layer 6 to the insulating layer 7 to form the silicon waveguide 1.
- Partial etching makes it possible, for example, to form ribs for coupling to an optical fiber as described above.
- the formation of the slotted metal guide 2 is carried out by the following successive steps:
- metal preferably silver or copper (FIG. 16), the deposited metal thickness defining the height of the slot.
- the slot guide 2 is made by the Damascene method, that is to say that the dielectric 8 encapsulating or partially covering the waveguide 1 is etched partially or totally above the waveguide 1 to make cavities of dimensions equal to the dimensions of the metal elements 3a, 3b and to define the slot 4 of the slot guide.
- the metal can then be deposited on the entire substrate before polishing comes, preferably, remove all the metal present outside said cavities 9a, 9b.
- the metal elements 3a, 3b are in contact with the waveguide 1.
- the method comprises an additional layer having particular optical properties, the latter may to be engraved to the dielectric 8 and the metal elements 3a, 3b are then in contact with the dielectric 8.
- the material in the slot may be different from that which encapsulates the waveguide 1 or partially covers the waveguide 1.
- the material can also be removed after formation of the metal elements 3a, 3b to leave the slot free.
- the Damascene method has the advantage of allowing the production of a slot 4 between the two metallic elements 3a, 3b, preferably of copper and / or silver, the edges of which are more abrupt and less rough than those obtained by direct etching. metals.
- the metal used to form the metal elements 3a, 3b is a metal having a low refractive index. This improves the operation of the slotted metal guide by reducing the loss of dissipation that can be caused by the roughness of the slot. This method also allows the use of materials whose direct etching is not easily reproducible such as copper.
- the method comprises between the step of etching the cavities 9a, 9b and the cavity filling step 9a, 9b a chemical etching step at said cavities 9a, 9b to allow the thinning of the wall defining the dimensions of the slot.
- a step of selective etching of the material located between the two metallic elements is carried out in order to allow the filling of the slot by another material different from that encapsulating the waveguide 1.
- One of the applications of this embodiment is particle detection. These can be trapped in the vent slot, preferably by a microfluidic system, to modify the propagation constant of the electromagnetic wave in said slot guide and thus the coupling efficiency to the guide. wave. The variation of the efficiency then makes it possible to detect certain particles.
- the coupling device is preferably made of non-contaminating metals (copper, aluminum, etc.) in order to use the same manufacturing means as those used in the present invention. the fields of microelectronics and photonics on silicon.
- the coupling device described above can serve as an elementary brick in an optical circuit and allows optical interconnections to be made at very small distances. It has the advantage of a very good efficiency and a high compactness.
- the coupling device to form an optical and electrical coupler of an object, for example a molecule preferably of nanometric dimensions.
- an object for example a molecule preferably of nanometric dimensions.
- a thin-film slot guide for example of the order of 50 nm thick, makes it possible to address objects of nanometric dimensions.
- Such a coupler makes it possible in particular to link the electrical transport properties of the object to its optical properties.
- Application examples can be molecular spectroscopy to study the electronic states of an unknown object. For a known object, it is possible to optically modulate the conductance of the object, and thus to produce a molecular transistor controlled by an optical gate.
- the invention may also be useful for coupling the luminescence of an object to a silicon waveguide.
- One solution to this approach is to combine an optical coupling as described using a waveguide, and a slot guide combined with an electrical coupling.
- an optical and electrical coupler comprises a coupling device as described above, according to its different embodiments and variants, and an electric coupling element provided with two electrodes arranged at the slot of the guide.
- the object is preferably in contact with at least one of the electrodes.
- the slot guide 2 is optically coupled to the waveguide 1.
- the object 11 may also be in contact with the two electrodes, in both cases the object in electrical contact with the electrode or electrodes may then be addressed electrically.
- the electrodes preferably comprise two microtips 10a, 10b, preferably metal, placed facing one another, one of the microtips 10a being oriented towards the other microtip 10b.
- the microtips are used to address objects of smaller dimensions than the slot. For objects larger than the slot (nanowires, graphene nanotubes, etc.) the electrodes may have any shape.
- the acute end of a microtip 10a, 10b is proximal to the sharp end of the other microtip.
- the object 11 may be in electrical contact with one of the microtips 10a, 10b, at its acute end, or be electrically clamped by the two microtips 10a, 10b ( Figures 17 and 18). Of more generally, the object 11 is in electrical contact with at least one of the electrodes.
- the electrodes are formed by the metal elements 3a, 3b of the slot guide 2, and each of the metal elements 3a, 3b comprises, at the level of the slot separating them from a microtip, one of the microtips 10a, 10b being oriented towards the other microtip.
- the microtips 10a, 10b are useful for coupling nanoscale molecules.
- the two metal elements 3a, 3b may comprise two edges facing each other and delimiting the slot, a microtip may be made on one of the edges which locally forms a projection towards a substantially identical projection of the other edge.
- the microtips 10a, 10b are arranged in the slot, each of the metal elements 3a, 3b then comprises in the slot separating them a microtip 10a, 10b, one of the microtips being oriented towards the other microtip.
- the slotted guide 2 makes it possible on the one hand to optically couple the wave to the object 1, and on the other hand to electrically couple the object 11, for example by connecting the two metal elements 3a, 3b to a measurement and / or polarization electronics.
- the metal elements 3a, 3b of the slot guide 2 are situated between the waveguide 1 and the electrodes, preferably comprising microtips 10a, 10b.
- the electrodes are then distinct from the metal elements 3a, 3b but remain at the level, that is to say near the slot.
- Said electrodes can be located between Onm and 500nm of the metal elements 3a, 3b, and generally up to half the incident wavelength, and preferably at a minimum distance greater than the width of the slot.
- the electrodes are located in a plane shifted from the plane of the metal elements 3a, 3b, and are preferably arranged above the slot 4.
- the electrodes are distinct from the metal elements 3a, 3b.
- the electrodes are separated from the metallic elements 3a, 3b by a layer of a dielectric material, for example silicon oxide, of low index relative to the waveguide 1, typically the refractive index of the dielectric material is between 1 and 2.5.
- the second embodiment has the advantage of not interfering with the optical coupling of the waveguide 1 with the slot guide 2 with respect to the first embodiment of the coupler.
- the thickness of the electrodes of the second embodiment in a direction perpendicular to the plane of the waveguide may be between a few nanometers at a zone intended for the electrical coupling of objects of nanometric size (molecules), and a hundred or so nanometers at a contact recovery zone to facilitate said resumption of electrical contact.
- each electrode may comprise an electrical coupling zone (addressing the object) whose thickness is less than a contact recovery zone of the electrodes.
- the thickness of the electrodes is equal to the thickness of the metal elements 3a, 3b.
- a thin thickness at the electrodes makes it possible to contact an object of nanometric size (for example a molecule). For large objects such as nanowires, nanotubes, graphene, the more the contact at the coupling zone will be thick the better it will be.
- the coupler comprising the microtips 10a, 10b
- the latter are preferably located at the median of the slot, said median being perpendicular to the longitudinal axis of the slot. This allows in particular to reduce the surface of the electrodes contained in or near the slot to disturb the propagation of the light signal to a minimum.
- the spacing between the two electrodes is preferably less than 200 nm.
- the electrodes may be offset from each other, and may be spaced apart larger than the width of the slot.
- these can be obtained by forming electrodes in electrical contact separated by a relatively thin bridge (for example about ten nanometers thick, and about 50 nm x 100 nm side dimensions) . Then these electrodes can be polarized in current so as to break the bridge, and space the two electrodes by a nanoscale gap. It can also be envisaged to apply mechanical stresses to the bridge to break it and delimit the microtips. For spacings greater than 30nm, lithography / engraving techniques will be used.
- the microtips 10a, 10b and the metal elements 3a, 3b of the slot guide 2 are made of different materials to ensure good ohmic contact of the points with the object.
- the microtips are formed by metal multilayers, for example Al or Au.
- the object 11 may be an object of nanometric size such as a nanotube, graphene, or a quantum dot whose growth and then deposition can be made so as to bring said box into contact with the electrodes.
- An electrical contact between the object and the electrodes can be obtained by electromigration when the object is a molecule, or one or more metal particles (gold balls for example).
- the object is of nanometric size, for example a molecule, electrodes comprising microtips will preferably be used, and for larger objects, such as nanowires, carbon nanotubes or graphene, conventional electrodes may be used.
- the electrodes will then preferably be arranged so as not to impede the propagation of the light signal in the slot guide.
- the metal elements alone can also serve as electrodes.
- the coupler offers a high optical coupling efficiency towards a nano-sized object, because the wave confined in the slit guide slot has a concentration one hundred times higher than the concentration that can be found in the prior art. .
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10799076.4A EP2510391B1 (de) | 2009-12-09 | 2010-12-07 | Vorrichtung zur kopplung einer elektromagnetischen welle zwischen einem wellenleiter und einer gerillten metallführung, verfahren zur herstellung dieser vorrichtung und optischer elektrischer koppler für ein objekt mit der optischen kopplungsvorrichtung |
US13/514,830 US8958670B2 (en) | 2009-12-09 | 2010-12-07 | Device for coupling an electromagnetic wave between a waveguide and a slit metal guide, method for manufacturing such a device, and optical and electric coupler for an object using the optical coupling device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0905965 | 2009-12-09 | ||
FR0905965A FR2953607B1 (fr) | 2009-12-09 | 2009-12-09 | Dispositif de couplage d'une onde electromagnetique entre un guide d'onde et un guide metallique a fente, procede de fabrication dudit dispositif |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011070249A1 true WO2011070249A1 (fr) | 2011-06-16 |
Family
ID=42245998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2010/000817 WO2011070249A1 (fr) | 2009-12-09 | 2010-12-07 | Dispositif de couplage d'une onde électromagnétique entre un guide d'onde et un guide métallique à fente, procédé de fabrication dudit dispositif, et coupleur optique et électrique d'un objet utilisant le dispositif de couplage optique |
Country Status (4)
Country | Link |
---|---|
US (1) | US8958670B2 (de) |
EP (1) | EP2510391B1 (de) |
FR (1) | FR2953607B1 (de) |
WO (1) | WO2011070249A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3040500A1 (fr) * | 2015-08-31 | 2017-03-03 | Commissariat Energie Atomique | Dispositif de detection a diffusion raman amplifiee de surface |
Families Citing this family (4)
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KR20130031597A (ko) * | 2011-09-21 | 2013-03-29 | 한국전자통신연구원 | 편광기 |
JP6977669B2 (ja) * | 2018-06-06 | 2021-12-08 | 日本電信電話株式会社 | 光モジュール |
US10262984B1 (en) * | 2018-07-05 | 2019-04-16 | Stmicroelectronics S.R.L. | Optical integrated circuit systems, devices, and methods of fabrication |
CN113785404B (zh) * | 2019-03-01 | 2022-10-28 | 加州理工学院 | 波导集成等离子体激元辅助场发射检测器 |
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EP0927906A1 (de) * | 1996-09-17 | 1999-07-07 | Toyota Jidosha Kabushiki Kaisha | Planarer wellenleiter und dessen herstellung |
US6178275B1 (en) * | 1997-05-01 | 2001-01-23 | The Trustees Of The Stevens Institute Of Technology | Method and apparatus for modulation of guided plasmons |
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US20040188794A1 (en) * | 2003-03-31 | 2004-09-30 | Prakash Gothoskar | Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (SOI) platform |
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US20080225918A1 (en) * | 2007-03-14 | 2008-09-18 | Martin Achtenhagen | Index guided semiconductor laser with loss-coupled gratings and continuous waveguide |
US8290325B2 (en) * | 2008-06-30 | 2012-10-16 | Intel Corporation | Waveguide photodetector device and manufacturing method thereof |
JP2010081487A (ja) * | 2008-09-29 | 2010-04-08 | Oki Electric Ind Co Ltd | コプレーナ線路及びその製造方法 |
US8417070B2 (en) * | 2009-09-30 | 2013-04-09 | Intel Corporation | Waveguide coupled surface plasmon polarition photo detector |
FR2956218B1 (fr) * | 2010-02-09 | 2012-02-24 | Commissariat Energie Atomique | Coupleur optique integre |
US8467632B2 (en) * | 2011-01-06 | 2013-06-18 | Oracle America, Inc. | Waveguide electro-absorption modulator |
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- 2009-12-09 FR FR0905965A patent/FR2953607B1/fr not_active Expired - Fee Related
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- 2010-12-07 US US13/514,830 patent/US8958670B2/en not_active Expired - Fee Related
- 2010-12-07 EP EP10799076.4A patent/EP2510391B1/de not_active Not-in-force
- 2010-12-07 WO PCT/FR2010/000817 patent/WO2011070249A1/fr active Application Filing
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US20040188794A1 (en) * | 2003-03-31 | 2004-09-30 | Prakash Gothoskar | Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (SOI) platform |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3040500A1 (fr) * | 2015-08-31 | 2017-03-03 | Commissariat Energie Atomique | Dispositif de detection a diffusion raman amplifiee de surface |
Also Published As
Publication number | Publication date |
---|---|
EP2510391A1 (de) | 2012-10-17 |
US8958670B2 (en) | 2015-02-17 |
US20120251030A1 (en) | 2012-10-04 |
EP2510391B1 (de) | 2016-07-06 |
FR2953607B1 (fr) | 2012-05-18 |
FR2953607A1 (fr) | 2011-06-10 |
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