WO2011070156A3 - Dispositif et procédé de modification d'un substrat semiconducteur par un faisceau d'ions - Google Patents

Dispositif et procédé de modification d'un substrat semiconducteur par un faisceau d'ions Download PDF

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Publication number
WO2011070156A3
WO2011070156A3 PCT/EP2010/069383 EP2010069383W WO2011070156A3 WO 2011070156 A3 WO2011070156 A3 WO 2011070156A3 EP 2010069383 W EP2010069383 W EP 2010069383W WO 2011070156 A3 WO2011070156 A3 WO 2011070156A3
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WO
WIPO (PCT)
Prior art keywords
ion
semiconductor substrate
ion beam
electric potential
field emission
Prior art date
Application number
PCT/EP2010/069383
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German (de)
English (en)
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WO2011070156A2 (fr
Inventor
Frank Machalett
Jan Lossen
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to EP10790430A priority Critical patent/EP2510534A2/fr
Publication of WO2011070156A2 publication Critical patent/WO2011070156A2/fr
Publication of WO2011070156A3 publication Critical patent/WO2011070156A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H01J37/3172—Maskless patterned ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0805—Liquid metal sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31713—Focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

L'invention concerne un dispositif pour la modification d'un substrat semiconducteur par faisceau d'ions ou par implantation ionique, avec au moins une microsource d'ions composée d'au moins un agencement à émission de champ produisant un faisceau d'ions focalisable, orienté vers le substrat semiconducteur, composé d'un émetteur d'ions avec un réservoir d'ions à un premier potentiel électrique, un extracteur et/ou une lentille électrostatique à un deuxième potentiel électrique et une unité de post-accélération à un troisième potentiel électrique. Dans le procédé, le substrat semiconducteur est soumis à des faisceaux d'ions orientés provenant d'un réseau d'implantation composé de microsources d'ions à émission de champ et, grâce à une réponse pilotée des microsources d'ions à émission de champ, produit dans le substrat semiconducteur un profil de modification qui dépend du lieu dans son extension latérale et/ou dans sa profondeur.
PCT/EP2010/069383 2009-12-11 2010-12-10 Dispositif et procédé de modification d'un substrat semiconducteur par un faisceau d'ions WO2011070156A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10790430A EP2510534A2 (fr) 2009-12-11 2010-12-10 Dispositif et procédé de modification d'un substrat semiconducteur par un faisceau d'ions

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009057970 2009-12-11
DE102009057970.2 2009-12-11

Publications (2)

Publication Number Publication Date
WO2011070156A2 WO2011070156A2 (fr) 2011-06-16
WO2011070156A3 true WO2011070156A3 (fr) 2011-09-09

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WO (1) WO2011070156A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8697559B2 (en) 2011-07-07 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Use of ion beam tails to manufacture a workpiece
CN110851939A (zh) * 2018-07-27 2020-02-28 核工业西南物理研究院 圆柱形阳极层霍尔推力器寿命评估的仿真计算方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0303486A2 (fr) * 1987-08-12 1989-02-15 Oki Electric Industry Company, Limited Procédé d'implantation d'ions
US4902898A (en) * 1988-04-26 1990-02-20 Microelectronics Center Of North Carolina Wand optics column and associated array wand and charged particle source
US20010032939A1 (en) * 2000-02-09 2001-10-25 Gerlach Robert L. Multi-column FIB for nanofabrication applications
US20030122085A1 (en) * 2000-12-28 2003-07-03 Gerhard Stengl Field ionization ion source
US20030226834A1 (en) * 2002-06-07 2003-12-11 Fuji Photo Film Co., Ltd. & Fuji Photo Optical Co., Ltd. Laser annealer and laser thin-film forming apparatus
US20060022143A1 (en) * 2004-07-28 2006-02-02 Wolfgang Pilz Emitter for an ion source
US20070045534A1 (en) * 2005-07-08 2007-03-01 Zani Michael J Apparatus and method for controlled particle beam manufacturing
US20080018460A1 (en) * 2006-07-19 2008-01-24 Hitachi High-Technologies Corporation Manufacturing Equipment Using ION Beam or Electron Beam
EP1956630A1 (fr) * 2007-02-06 2008-08-13 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Séparateur de masse achromatique
DE102008020145A1 (de) * 2007-04-23 2008-11-13 Hitachi High-Technologies Corp. Ionenquelle, Ionenstrahlbearbeitungs/-betrachtungsvorrichtung, Vorrichtung mit einem geladenen Teilchenstrahl und Verfahren zum Betrachten des Querschnitts einer Probe
US20090278434A1 (en) * 2006-07-07 2009-11-12 Sri International Liquid Metal Wetting of Micro-Fabricated Charge-Emission Structures

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0303486A2 (fr) * 1987-08-12 1989-02-15 Oki Electric Industry Company, Limited Procédé d'implantation d'ions
US4902898A (en) * 1988-04-26 1990-02-20 Microelectronics Center Of North Carolina Wand optics column and associated array wand and charged particle source
US20010032939A1 (en) * 2000-02-09 2001-10-25 Gerlach Robert L. Multi-column FIB for nanofabrication applications
US20030122085A1 (en) * 2000-12-28 2003-07-03 Gerhard Stengl Field ionization ion source
US20030226834A1 (en) * 2002-06-07 2003-12-11 Fuji Photo Film Co., Ltd. & Fuji Photo Optical Co., Ltd. Laser annealer and laser thin-film forming apparatus
US20060022143A1 (en) * 2004-07-28 2006-02-02 Wolfgang Pilz Emitter for an ion source
US20070045534A1 (en) * 2005-07-08 2007-03-01 Zani Michael J Apparatus and method for controlled particle beam manufacturing
US20090278434A1 (en) * 2006-07-07 2009-11-12 Sri International Liquid Metal Wetting of Micro-Fabricated Charge-Emission Structures
US20080018460A1 (en) * 2006-07-19 2008-01-24 Hitachi High-Technologies Corporation Manufacturing Equipment Using ION Beam or Electron Beam
EP1956630A1 (fr) * 2007-02-06 2008-08-13 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Séparateur de masse achromatique
DE102008020145A1 (de) * 2007-04-23 2008-11-13 Hitachi High-Technologies Corp. Ionenquelle, Ionenstrahlbearbeitungs/-betrachtungsvorrichtung, Vorrichtung mit einem geladenen Teilchenstrahl und Verfahren zum Betrachten des Querschnitts einer Probe

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BORLAND J O: "Low temperature activation of ion implanted dopants: a review", JUNCTION TECHNOLOGY, 2002. IWJT. EXTENDED ABSTRACTS OF THE THIRD INTER NATIONAL WORKSHOP ON DEC. 2-3, 2002, PISCATAWAY, NJ, USA,IEEE, 2 December 2002 (2002-12-02), pages 85 - 88, XP010653681, ISBN: 978-4-89114-028-1 *

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WO2011070156A2 (fr) 2011-06-16
EP2510534A2 (fr) 2012-10-17

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