WO2011062453A2 - Dispositif d'inspection d'une tranche liée avec un laser - Google Patents

Dispositif d'inspection d'une tranche liée avec un laser Download PDF

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Publication number
WO2011062453A2
WO2011062453A2 PCT/KR2010/008244 KR2010008244W WO2011062453A2 WO 2011062453 A2 WO2011062453 A2 WO 2011062453A2 KR 2010008244 W KR2010008244 W KR 2010008244W WO 2011062453 A2 WO2011062453 A2 WO 2011062453A2
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WO
WIPO (PCT)
Prior art keywords
laser
wafer
bonded wafer
bonded
inspection apparatus
Prior art date
Application number
PCT/KR2010/008244
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English (en)
Korean (ko)
Other versions
WO2011062453A3 (fr
Inventor
장동영
홍석기
황호진
임영환
반창우
양시은
Original Assignee
재단법인 서울테크노파크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 재단법인 서울테크노파크 filed Critical 재단법인 서울테크노파크
Priority to US13/511,112 priority Critical patent/US20120314212A1/en
Priority to JP2012539820A priority patent/JP2013511711A/ja
Publication of WO2011062453A2 publication Critical patent/WO2011062453A2/fr
Publication of WO2011062453A3 publication Critical patent/WO2011062453A3/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Definitions

  • the present invention relates to a wafer inspection apparatus, and more particularly, to a bonded wafer inspection apparatus using an economical and easy-to-operate laser having a simple structure capable of inspecting interface defects of a bonded wafer using a laser.
  • Wafer bonding is a technique in which a silicon insulating film is formed on two semiconductor substrate surfaces and bonded to each other.
  • a wafer using the wafer bonding method may be a silicon on insulator (SOI) wafer.
  • SOI wafer the structure of the SOI wafer includes a buried insulating layer such as an oxide film under the silicon single crystal layer used as an active layer serving as a device fabrication region of the surface layer with respect to the depth direction of the wafer, and has another silicon single crystal layer below. It is structured.
  • SOI wafers having such a structure are characterized by low parasitic capacitance and high radioactivity.
  • the SOI wafer is expected to have high-speed, low power consumption operation, anti-latch-up effect, and is in the spotlight as a substrate for high-performance semiconductor devices.
  • Korean Patent Publication No. 10-0218541 (registered on June 10, 1999) discloses a method for manufacturing a SOI wafer.
  • This includes forming an oxide film on an insulating substrate, bonding a silicon single crystal wafer with an oxide film, forming a photoresist in a circle on the silicon single crystal wafer, etching a silicon single crystal wafer, and removing the photoresist. It relates to a method for producing a SOH wafer.
  • Korean Patent Publication No. 10-0498446 (registered on June 22, 2005) discloses a "SOI wafer and its manufacturing method".
  • a first semiconductor substrate including an insulating film, a well and a buried layer formed for each region in a device forming region on the first semiconductor substrate, and a lower portion of the device forming region in contact with the first semiconductor substrate and in contact with the bottom of the device isolation insulating film.
  • the present invention relates to an SOI wafer including a second semiconductor substrate on which an insulating film for bonding is formed so as to be electrically blocked, and a manufacturing method thereof.
  • Korean Patent Laid-Open Publication No. 10-2006-0069022 discloses a method for manufacturing a SOI wafer.
  • the present invention relates to a manufacturing method capable of producing an SOI wafer having a low concentration of hydrogen ions and a good separation of the hydrogen ion implantation layer of the bonded wafer and a significantly low Rms value on the surface through a two-step low temperature heat treatment process of 500 ° C. or lower. will be.
  • Korean Patent Publication No. 10-0571571 (registered on April 10, 2006) discloses a defect evaluation method of an SOH wafer using an ultrasonic microscope.
  • This technique uses an ultrasonic microscope to measure the distribution, density and size of unbonded, hydrofluoric and secco defects in the top silicon layer of an SOI wafer. There is an advantage that it is possible to detect Saeco defects.
  • this technology using ultrasonic waves has a problem that it is not easy to operate because of the complicated structure and the price is high.
  • an object of the present invention is to provide a bonded wafer inspection apparatus using a laser that is easy to operate as well as economical and reliable detection of interface defects of a bonded wafer.
  • the present invention comprises: a laser means for emitting a laser beam to the bonded wafer for inspecting defects between wafer interfaces; A laser diffusing means positioned between the laser means and the bonded wafer so that the laser beam emitted through the laser means can be diffused and irradiated onto the bonded wafer; And it provides a bonded wafer inspection apparatus using a laser including a detection means for detecting the presence of defects of the bonded wafer through a laser beam irradiated by the bonded wafer and transmitted through the bonded wafer.
  • the use of the bonded wafer inspection apparatus using the laser according to the present invention has the advantage that the inspector can inspect the wafer interface at a desired magnification.
  • the simple structure has the advantage of easy operation for inspection.
  • the simple structure allows economic benefits.
  • the bonded wafer inspection apparatus using a laser that can be applied to oxide single crystal wafers used in mobile phones, gallium arsenide (GaAs) wafers used in LEDs, etc. Can be provided.
  • GaAs gallium arsenide
  • FIG. 1 is a flowchart illustrating a schematic process of forming a bonded wafer for explaining a bonded wafer inspection apparatus using a laser according to an embodiment of the present invention.
  • FIG. 2 is a schematic inspection conceptual view for explaining a bonded wafer inspection apparatus using a laser according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram illustrating a bonded wafer inspection apparatus using a laser according to an embodiment of the present invention.
  • 4 to 6 are experimental diagrams for measuring the optimum laser uniformity of the bonded wafer inspection apparatus using a laser according to an embodiment of the present invention.
  • FIG. 8 is a perspective view for explaining a bonded wafer inspection apparatus using the laser of FIG.
  • FIG. 9 is a schematic configuration diagram of a diffusion means moving member for explaining a bonded wafer inspection apparatus using a laser according to an embodiment of the present invention.
  • the inspection apparatus of the present invention is a device for detecting defects that may occur at the interface of the bonded wafer using a laser.
  • the bonded wafer also referred to as a 'bond wafer'
  • the bonded wafer is a wafer formed by bonding an oxide layer between two wafers to each other, and may be a defect that may occur during a bonded wafer manufacturing process at an interface between two wafers.
  • the device detects defects in the interface due to foreign matters or bubbles (meaning air gaps generated due to foreign matters or bubbles, etc.). Can be.)
  • the inspection apparatus of the present invention as shown in Figure 2, the bonded wafer 10 manufactured to detect the presence of defects due to foreign matter or bubbles between the interface of the bonded wafer bonded through the manufacturing process as described above (10) ) Is a device that detects the presence or absence of a defect through an image transmitted by irradiating a laser.
  • defects that may occur at an interface of the bonded wafer may be detected. For example, foreign substances or bubbles may be formed at the interface.
  • the inspection apparatus of the present invention relates to an apparatus for inspecting an interface of a bonded wafer through a photographed image by photographing an image transmitted through the bonded wafer by irradiating a laser onto the bonded wafer.
  • the inspection apparatus of the present invention is simple in structure and easy to operate as well as economical in terms of cost compared to conventional inspection equipment using ultrasound and X-rays.
  • it is possible to output more accurate defect images than the infrared inspection equipment.
  • FIG. 3 is a schematic diagram illustrating a bonded wafer inspection apparatus using a laser according to an embodiment of the present invention.
  • the bonded wafer inspection apparatus using the laser provides a laser means 100 for emitting a laser beam to the bonded wafer 10 for inspecting defects between interfaces of the bonded wafer. And a laser diffusing means 200 positioned between the laser means 100 and the bonded wafer 10 so that the laser beam emitted through the laser means 100 can be diffused and irradiated onto the bonded wafer 10. Include.
  • the inspection apparatus of the present invention includes a detection means 300 for detecting the presence or absence of the defect of the interface of the bonding wafer 10 through the laser beam irradiated to the bonding wafer 10 and transmitted through the bonding wafer 10.
  • the bonded wafer inspection apparatus using a laser includes a laser means 100, the laser means 100 is a laser for inspecting the defect between the interface of the bonded wafer As a means for diverging the beam to the bonded wafer, for this purpose it includes a laser generator 110, a laser separation means 120, and a laser light source (130).
  • the laser generator 110 serves to generate a laser beam for inspecting defects between the bonded wafer interfaces, and the laser generator 110 generates a laser beam, irradiated with the bonded wafer. It is preferable to generate a laser beam having a wavelength of 1000 nm or more so that the laser beam can pass through the bonded wafer, and preferably, generate a laser beam having a wavelength of 1064 nm or more.
  • the reason for limiting the numerical value of the wavelength of the laser beam generated from the laser generator 110 as described above is that the laser beam does not penetrate (pass) the wafer in the wavelength band of less than 1000 nm, and only more wavelengths pass through the wafer. Because.
  • the laser separating means 120 is a device for separating a laser beam generated from the laser generating device 110, the laser separating means 120 is a device called a light splitter or a splitter (splitter) Preference is given to using.
  • the two optical fibers are thermally bonded to each other, or the sides are separated and aligned on a substrate.
  • the optical power splitter thus manufactured divides a single signal into two, so-called 1 ⁇ 2 optical power divider.
  • 1 x 2 optical power dividers can be cascaded to produce N outputs.
  • the channels of light to be distributed it would be desirable to allow the channels of light to be distributed to be separated into 4, 8, or 16 channels.
  • the number of channels to be distributed will be determined according to the initial purpose.
  • the laser light source 130 serves to irradiate the bonded wafer 10 with the laser beam generated from the laser generator 110, which is separated through the laser separation means 120.
  • the laser light source 130 is preferably formed to correspond 1: 1 to the number of laser beams separated by the laser separating means 120.
  • the bonded wafer inspection apparatus using a laser includes a laser diffusion means (200).
  • the laser diffusion means 200 serves to allow the laser beam emitted from the laser light source 130 of the laser means 100 to be diffused and irradiated onto the bonding wafer 10.
  • the laser diffusion means 200 is preferably located between the laser means 100 and the bonded wafer 10, the laser diffusion means 200 may be used as long as the material can diffuse the laser beam. It may be sufficient, and it may be preferable to use a diffusion sheet as an example.
  • the inspection apparatus of the present invention emits a laser beam by using the laser means 100, diffuses the emitted laser beam by using the laser diffusing means 200, and irradiates the bonded wafer 10, followed by a bonded wafer.
  • Bar 10 is a technique for detecting the irradiated laser beam through the detection means 300, the detection means in accordance with the distance of the laser means 100, the laser diffusion means 200, and the bonded wafer (10) The reliability of the image detected through 300 will vary.
  • a factor that can improve the reliability of the image detected in the interface defect detection of the bonded wafer 10 is the laser uniformity of the inspection area, the laser uniformity of the laser diffusion means 200 of any material The distance between the laser means 100, the laser diffusion means 200, and the bonded wafer 10 will be determined according to what conditions.
  • the laser uniformity may be defined as the standard deviation of the bonded light quantity distribution, and the standard deviation of the light quantity distribution through the experiment is as follows. (The following experiment uses optical design software applied Monte-Carlo simulation. )
  • Table 1 A type B type C type thickness 1 mm 0.05 mm 1.6 mm material Glass plastic opal Refractive index 1.5D 1.64D 1.52D Transmittance 80% 80% 95% Water absorption 20% 20% 5%
  • the laser diffusion means 200 is classified into three types to be tested.
  • the laser beam emitted through the laser light source has a wavelength of 1064 nm, and the laser beam is irradiated to three types of laser diffusing means in the same manner.
  • Laser diffusion means A type B type C type Distance between laser light sources (L) 50 mm 60 mm 70 mm Laser Diffusion Means and Bonded Wafer Distance (D 1 ) 50 mm 60 mm 70 mm Distance between laser light source and laser diffusing means (D 2 ) 50 mm 60 mm 70 mm
  • the distance L between the laser light sources 130 for each type (type) of the laser diffusion means 200 As shown in Table 2, the distance L between the laser light sources 130 for each type (type) of the laser diffusion means 200, the distance between the laser diffusion means 200 and the bonded wafer 10 ( D 1 ) and the distance D 2 between the laser light source 130 and the laser diffusing means 200.
  • D 1 and D 2 varies from 10 to 100 mm in 10 mm intervals
  • L varies from 15 to 90 mm in 15 mm intervals.
  • the bonded wafer inspection apparatus using a laser includes a detection means (300).
  • the detection means 300 serves to detect the presence or absence of defects in the bonded wafer 10 through the laser beam emitted from the laser means 100 passing through (transmitted) the bonded wafer 10.
  • the detection means 300 may be made of a microscope (not shown) for enlarging the laser beam transmitted through the bonded wafer 10 and a camera (not shown) for taking an image displayed through the microscope. .
  • the magnification of the laser beam transmitted through the bonded wafer 10 through the microscope, the magnification to be enlarged will be selectively changed according to the initial inspection purpose, the inspection speed will be determined according to the size of the magnification to be enlarged. That is, the speed of detecting defects at the interface of the bonded wafer 10 is determined by the magnification magnified through the microscope. For example, when the foreign matter is large in size, the entire bonded wafer 10 may be observed as one sector. If the foreign matter is small in size, the bonded wafer 10 may be divided into several sectors and then used as a sector using a microscope. You will be able to zoom in and observe.
  • FIG. 7 is an exemplary view for explaining a bonded wafer inspection apparatus using a laser according to an embodiment of the present invention
  • Figure 8 is a perspective view of FIG.
  • the laser means 100 of the present invention the laser diffusion means 200, and a frame 400 for fixing the detection means 300, the diverging through the laser means 100 And a wafer holder 500 on which a bonded wafer, which is a target of irradiation of the laser beam, is mounted.
  • the laser means 100 including the laser generating device 110, the laser resolving means 120, and the laser light source 130 is located at the bottom.
  • the laser means 100 may be fixedly positioned by the frame 400 or may be movable as described below.
  • the laser means 100 may further include a laser means moving member 600 positioned vertically on one side so that the laser means 100 may move upward and downward.
  • the laser means moving member 600 is a laser means serving as a guide to move the laser means mounting member 610 and the laser means mounting member 610 to mount the laser means 100 up and down It may be desirable to include a guide member 620.
  • the laser diffusion means 200 is located at a position spaced apart from the upper portion of the laser means 100 by a predetermined distance.
  • the laser diffusion means 200 may be fixedly positioned by the frame 400, and may further include a separate laser diffusion means moving member 700 as shown in FIG. .
  • the laser diffusion means moving member 700 serves as a guide to move the laser diffusion means mounting member 710 and the laser diffusion means mounting member 710 which can mount the laser diffusion means 200 up and down. It will be preferable to include a laser diffusion means guide member 720.
  • the wafer holder 500 for mounting the bonded wafer at a position spaced a predetermined distance from the laser diffusion means 200 is located.
  • the wafer mounting part 500 includes a support part 510 for supporting a circumferential edge of the bonding wafer which is mounted to mount the bonding wafer, and a hole 520 formed at the center to allow the laser beam to pass through the bonding wafer. It is preferable.
  • the wafer holder 500 may be designed to be capable of adjusting the diameter of the hole formed in the center corresponding to the diameter of the wafer to be mounted, regardless of the size of the wafer to be mounted.
  • the wafer holder 500 is preferably designed to be a combination of a plurality of wafer holder 500 corresponding to the size of the wafer to be mounted as shown in FIG.
  • the detection means 300 including the microscope 310 and the camera 320 is located at a distance spaced apart from the upper portion of the wafer holder 500 by a predetermined distance.
  • the detecting means 300 may be fixedly positioned by the frame 400, or may be designed to be able to move up and down using a separate moving means.
  • each moving member that is, the laser means moving member 600 and the laser diffusing means moving member 700 may be controlled by using a separate motor.
  • each moving member may be controlled using one motor, or may be designed to include a motor for each moving member.

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Abstract

La présente invention concerne un dispositif d'inspection d'une tranche liée avec un laser, qui est réalisé avec une structure simple, simplifiant l'utilisation du dispositif, et qui peut détecter de manière économique et fiable des défauts dans les surfaces limitrophes de la tranche liée. Dans ce but, le dispositif d'inspection d'une tranche liée avec un laser comporte un moyen de laser, un moyen de diffusion de laser et un moyen de détection. Selon le dispositif d'inspection d'une tranche liée avec un laser selon la présente invention, il est possible d'inspecter les surfaces limitrophes de la tranche avec l'amplification souhaitée par un inspecteur. En plus, grâce à sa structure simple, l'utilisation du dispositif pour l'inspection devient facile.
PCT/KR2010/008244 2009-11-20 2010-11-22 Dispositif d'inspection d'une tranche liée avec un laser WO2011062453A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/511,112 US20120314212A1 (en) 2009-11-20 2010-11-22 Inspection device for bonded wafer using laser
JP2012539820A JP2013511711A (ja) 2009-11-20 2010-11-22 レーザーを用いた貼り合わせウェーハの検査装置

Applications Claiming Priority (2)

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KR1020090112346A KR20110055787A (ko) 2009-11-20 2009-11-20 레이저를 이용한 접합웨이퍼 검사장치
KR10-2009-0112346 2009-11-20

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WO2011062453A2 true WO2011062453A2 (fr) 2011-05-26
WO2011062453A3 WO2011062453A3 (fr) 2011-11-17

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JP (1) JP2013511711A (fr)
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WO (1) WO2011062453A2 (fr)

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US9709510B2 (en) * 2014-06-26 2017-07-18 Kla-Tencor Corp. Determining a configuration for an optical element positioned in a collection aperture during wafer inspection
CN110148569B (zh) * 2019-05-16 2021-08-24 武汉新芯集成电路制造有限公司 一种键合结构的缺陷扫描方法及设备
KR102581541B1 (ko) 2019-07-22 2023-09-21 삼성전자주식회사 웨이퍼 측정 장치
KR20210024319A (ko) 2019-08-21 2021-03-05 삼성전자주식회사 웨이퍼 검사장치
CN116913797B (zh) * 2023-07-14 2024-02-13 无锡九霄科技有限公司 一种晶圆键合质量检测装置

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WO2011062453A3 (fr) 2011-11-17
US20120314212A1 (en) 2012-12-13
KR20110055787A (ko) 2011-05-26
JP2013511711A (ja) 2013-04-04

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