WO2011060764A2 - Formation d'émetteur au moyen d'un laser - Google Patents
Formation d'émetteur au moyen d'un laser Download PDFInfo
- Publication number
- WO2011060764A2 WO2011060764A2 PCT/DE2010/001344 DE2010001344W WO2011060764A2 WO 2011060764 A2 WO2011060764 A2 WO 2011060764A2 DE 2010001344 W DE2010001344 W DE 2010001344W WO 2011060764 A2 WO2011060764 A2 WO 2011060764A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- contact solar
- laser
- back contact
- emitter
- Prior art date
Links
- 230000015572 biosynthetic process Effects 0.000 title description 8
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000002019 doping agent Substances 0.000 claims description 14
- 238000001465 metallisation Methods 0.000 claims description 14
- 238000007650 screen-printing Methods 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 3
- 239000002985 plastic film Substances 0.000 claims description 3
- 229920006255 plastic film Polymers 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000012876 carrier material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- -1 aluminum-silver Chemical compound 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to a back contact solar cell with an emitter region according to the preamble of claim 1 and to a method for emitter formation with a laser, in particular for producing a back contact solar cell, according to the preamble of claim 6.
- Conventional solar cells have a front-side contact, that is, a contact disposed on a light-facing surface of the solar cell, and a back-side contact on a surface of the solar cell facing away from the light.
- the largest volume fraction of a light-absorbing semiconductor substrate is of the same semiconductor type, e.g. p-type contacted by the back contact. This volume fraction is usually referred to as base.
- base In the area of the surface of the front side of the semiconductor substrate is a thin layer of
- CONFIRMATION COPY opposite type of semiconductor eg n-type.
- This layer is commonly referred to as an emitter and the contacts contacting them as emitter contacts.
- both the base contacts and the emitter contacts lead due to their associated partial shading of the front to a loss of efficiency.
- corresponding emitter regions must be formed on the rear side of the solar cell.
- a solar cell in which both emitter regions and base regions are located on the side facing away from the light in use and in which both the emitter contacts and the base contacts are formed on the back, is referred to as a back contact solar cell.
- a high-temperature step is usually employed.
- the diffusion of the dopant, generally phosphorus, usually takes place in a diffusion furnace.
- a "laser doping of solids with a line-focused laser beam and production of solar cell emitters based thereon" (EP 1 738 402 B1) is known, in which a dopant is brought into contact with a surface of a solar cell, then an area by irradiation with a laser The surface of the solar cell is melted, wherein the dopant diffused into it and then recrystallized during the cooling of the molten area.
- the laser beam is focused in a line focus on the solid.
- the invention has for its object to provide a back-contact solar cell and a method for producing back-contact solar cells, with the insertion of individual simplifying process steps, the overall yield of production can be increased and a back contactable solar cell is easier to produce.
- the invention has the advantage that in a conventional method, a further process step is introduced, in which a transparent, with a dopant (eg aluminum or boron) coated substrate, preferably a coated plastic film is brought into contact with the back of a silicon wafer and through Irradiation with a laser thereby locally a dopant is introduced, which forms a pn junction.
- a transparent, with a dopant eg aluminum or boron
- a coated plastic film preferably a coated plastic film
- the base of the silicon for.
- a laser is used, which is preferably pulsed or provided with a line optics, so that the silicon is not permanently damaged.
- Etching a raw wafer of monocrystalline or multicrystalline silicon as a substrate which is preferably, but not necessarily provided with an n-type doping.
- the alkaline or acidic etching process removes the sawing damage from the raw wafer and results in a textured surface with reduced reflection.
- this step means the formation of a pn junction, in the n-type substrate, it leads to an n +, n front surface field.
- the passivation layer may be opened locally for the subsequent introduction of the dopant and / or the metallization. This is done with the aid of lasers or local etching by means of screen printing or inkjet processes.
- a dopant by employing a transparent substrate, preferably a plastic film, which is coated, for example, but not necessarily, with a metal such as aluminum, boron, gallium or indium.
- This film is brought into contact with the coated side with the backside of the silicon wafer.
- a laser irradiates the vapor-deposited layer through the film.
- LIFT method Laser Induced Forward Transfer
- an optically transparent carrier material with a thin layer of the material to be applied is placed in front of a substrate to be coated.
- the material to be applied is heated locally by the optically transparent carrier layer so much that it dissolves from the carrier material and deposits on the immediately adjacent substrate.
- the material heats up so much that it reaches the evaporation point and that the transfer process to the substrate surface is supported and driven by the metal vapor pressure.
- a metal-coated film is brought into contact with the silicon wafer surface as an alternative to the described LIFT method and then bombarded with a laser from behind through the film so that the metal is thereby blasted from the film and so is driven as a doping layer and not as metallization in the silicon.
- the film is not brought directly into contact with the silicon wafer, but some ⁇ placed away. As a result, after doping with the laser, the doping of the silicon wafer with the detached metal particles is achieved.
- the metal of the coating may be silver or else a sequence of different metals, for example titanium, palladium, silver or other metals.
- Soldering of the contacts by printing an aluminum-silver paste on the edge over the aluminum screen print, which enables soldering of the contacts.
- furnace processes for drying or sintering of the contacts are to be provided.
- emitter areas or metallizations are applied completely or at least over a large area, for example, under the screen printing emitters and / or under the screen-printing metallization by means of laser technology.
- the backside passivation is opened locally before the laser process.
- the layout for optimizing the series resistance is changed such that the distance of the screen printing lines, the number and the location of the solderable areas; the width, length, spacing and shape of the emitter and contact lines are variable and adaptable to the respective requirements.
- one or both structures produced by the laser can be galvanically or de-energized.
- Fig. 1 shows the backside of the wafer after emitter formation.
- Fig. 2 the back side of the wafer after metallization is shown.
- Fig. 1 shows the backside of the wafer 1 after emitter formation.
- the D-lines 2 consist of the locally driven dopant, z. As aluminum.
- the M-lines 3 represent the laser-transferred metal from the foil, e.g. Silver.
- the D-lines 2 represent the emitter (for example aluminum)
- the M-lines 3 the laser metallization, which are connected by M-screen-printing fingers 7 to the contact bar 5 at the edge.
- a silver / aluminum bar 6 is used for the solderable contacting of the emitter, which in turn is connected by D- Siebdruckfinger 8 with the lasered emitter regions.
- the individual back contact solar cells can be connected together to form a string.
- Dopant e.g. aluminum
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
La présente invention concerne une pile solaire à contact arrière (4) et un procédé pour réaliser une pile solaire à contact arrière (4), une étape de traitement supplémentaire consistant à mettre en contact un substrat transparent avec le côté arrière d'une tranche de silicium, à introduire un agent de dopage localement par application d'un laser, puis à mettre en contact la base du silicium de type n à l'aide d'un film recouvert de métal et d'un autre traitement laser.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009053776.7 | 2009-11-19 | ||
DE102009053776A DE102009053776A1 (de) | 2009-11-19 | 2009-11-19 | Emitterbildung mit einem Laser |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011060764A2 true WO2011060764A2 (fr) | 2011-05-26 |
WO2011060764A3 WO2011060764A3 (fr) | 2012-02-02 |
Family
ID=43877159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2010/001344 WO2011060764A2 (fr) | 2009-11-19 | 2010-11-19 | Formation d'émetteur au moyen d'un laser |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102009053776A1 (fr) |
WO (1) | WO2011060764A2 (fr) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012171927A1 (fr) * | 2011-06-14 | 2012-12-20 | Robert Bosch Gmbh | Procédé et système pour fabriquer une cellule solaire cristalline |
CN103413860A (zh) * | 2013-07-17 | 2013-11-27 | 湖南红太阳光电科技有限公司 | 一种局域背面钝化晶体硅电池的制备方法 |
WO2014124675A1 (fr) * | 2013-02-14 | 2014-08-21 | Universität Konstanz | Cellule solaire à contact arrière, sans barre omnibus, procédé de fabrication et module solaire présentant ces cellules solaires |
CN104282771A (zh) * | 2013-07-09 | 2015-01-14 | 英稳达科技股份有限公司 | 背面接触型太阳能电池 |
WO2016011140A1 (fr) * | 2014-07-15 | 2016-01-21 | Natcore Technology, Inc. | Cellules solaires à contact arrière interdigité (ibc) transférées par laser |
CN105914249A (zh) * | 2016-06-27 | 2016-08-31 | 泰州乐叶光伏科技有限公司 | 全背电极接触晶硅太阳能电池结构及其制备方法 |
CN106653881A (zh) * | 2017-02-24 | 2017-05-10 | 泰州中来光电科技有限公司 | 一种背接触太阳能电池串及其制备方法和组件、系统 |
WO2018157498A1 (fr) * | 2017-03-03 | 2018-09-07 | 广东爱康太阳能科技有限公司 | Cellule solaire perc de type p à double face et module et système associés, et procédé de préparation de celle-ci |
WO2018157821A1 (fr) * | 2017-03-03 | 2018-09-07 | 广东爱旭科技股份有限公司 | Cellule solaire bifaciale du type perc de type p, son ensemble, son système et son procédé de préparation |
CN111524797A (zh) * | 2020-04-26 | 2020-08-11 | 泰州中来光电科技有限公司 | 一种选择性发射极的制备方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011015283B4 (de) | 2011-03-28 | 2013-03-07 | Bayerisches Zentrum für Angewandte Energieforschung e.V. | Herstellung eines Halbleiter-Bauelements durch Laser-unterstütztes Bonden und damit hergestelltes Halbleiter-Bauelement |
DE102012003866B4 (de) | 2012-02-23 | 2013-07-25 | Universität Stuttgart | Verfahren zum Kontaktieren eines Halbleitersubstrates, insbesondere zum Kontaktieren von Solarzellen, sowie Solarzellen |
DE102012214254A1 (de) * | 2012-08-10 | 2014-05-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Laserbasiertes Verfahren und Bearbeitungstisch zur lokalen Kontaktierung eines Halbleiterbauelements |
EP2709162A1 (fr) * | 2012-09-13 | 2014-03-19 | Roth & Rau AG | Cellule photovoltaïque et module de cellule photovoltaïque reposant sur celle-ci |
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DE102006044936B4 (de) | 2006-09-22 | 2008-08-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Metallisierung von Solarzellen und dessen Verwendung |
EP1738402B1 (fr) | 2004-07-26 | 2008-09-17 | Jürgen H. Werner | Dopage laser d'elements solides au moyen d'un faisceau laser a focalisation lineaire et fabrication d'emetteurs de cellules solaires basee sur ce procede |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2654089A3 (fr) * | 2007-02-16 | 2015-08-12 | Nanogram Corporation | Structures de cellules solaires, modules photovoltaïques et procédés correspondants |
DE102007010872A1 (de) * | 2007-03-06 | 2008-09-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Präzisionsbearbeitung von Substraten und dessen Verwendung |
DE102008057228A1 (de) * | 2008-01-17 | 2009-07-23 | Schmid Technology Gmbh | Verfahren und Vorrichtung zur Herstellung einer Solarzelle |
-
2009
- 2009-11-19 DE DE102009053776A patent/DE102009053776A1/de not_active Ceased
-
2010
- 2010-11-19 WO PCT/DE2010/001344 patent/WO2011060764A2/fr active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1738402B1 (fr) | 2004-07-26 | 2008-09-17 | Jürgen H. Werner | Dopage laser d'elements solides au moyen d'un faisceau laser a focalisation lineaire et fabrication d'emetteurs de cellules solaires basee sur ce procede |
DE102006044936B4 (de) | 2006-09-22 | 2008-08-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Metallisierung von Solarzellen und dessen Verwendung |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012171927A1 (fr) * | 2011-06-14 | 2012-12-20 | Robert Bosch Gmbh | Procédé et système pour fabriquer une cellule solaire cristalline |
WO2014124675A1 (fr) * | 2013-02-14 | 2014-08-21 | Universität Konstanz | Cellule solaire à contact arrière, sans barre omnibus, procédé de fabrication et module solaire présentant ces cellules solaires |
CN104282771A (zh) * | 2013-07-09 | 2015-01-14 | 英稳达科技股份有限公司 | 背面接触型太阳能电池 |
CN103413860A (zh) * | 2013-07-17 | 2013-11-27 | 湖南红太阳光电科技有限公司 | 一种局域背面钝化晶体硅电池的制备方法 |
US9570638B2 (en) | 2014-07-15 | 2017-02-14 | Natcore Technology, Inc. | Laser-transferred IBC solar cells |
WO2016011140A1 (fr) * | 2014-07-15 | 2016-01-21 | Natcore Technology, Inc. | Cellules solaires à contact arrière interdigité (ibc) transférées par laser |
CN106687617A (zh) * | 2014-07-15 | 2017-05-17 | 奈特考尔技术公司 | 激光转印ibc太阳能电池 |
CN106687617B (zh) * | 2014-07-15 | 2020-04-07 | 奈特考尔技术公司 | 激光转印ibc太阳能电池 |
CN105914249A (zh) * | 2016-06-27 | 2016-08-31 | 泰州乐叶光伏科技有限公司 | 全背电极接触晶硅太阳能电池结构及其制备方法 |
CN106653881A (zh) * | 2017-02-24 | 2017-05-10 | 泰州中来光电科技有限公司 | 一种背接触太阳能电池串及其制备方法和组件、系统 |
CN106653881B (zh) * | 2017-02-24 | 2018-12-25 | 泰州中来光电科技有限公司 | 一种背接触太阳能电池串及其制备方法和组件、系统 |
WO2018157498A1 (fr) * | 2017-03-03 | 2018-09-07 | 广东爱康太阳能科技有限公司 | Cellule solaire perc de type p à double face et module et système associés, et procédé de préparation de celle-ci |
WO2018157821A1 (fr) * | 2017-03-03 | 2018-09-07 | 广东爱旭科技股份有限公司 | Cellule solaire bifaciale du type perc de type p, son ensemble, son système et son procédé de préparation |
CN111524797A (zh) * | 2020-04-26 | 2020-08-11 | 泰州中来光电科技有限公司 | 一种选择性发射极的制备方法 |
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WO2011060764A3 (fr) | 2012-02-02 |
DE102009053776A1 (de) | 2011-06-01 |
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