WO2011050551A1 - Dirve circuit for silicon controlled rectifier, device and control method thereof - Google Patents

Dirve circuit for silicon controlled rectifier, device and control method thereof Download PDF

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Publication number
WO2011050551A1
WO2011050551A1 PCT/CN2009/076211 CN2009076211W WO2011050551A1 WO 2011050551 A1 WO2011050551 A1 WO 2011050551A1 CN 2009076211 W CN2009076211 W CN 2009076211W WO 2011050551 A1 WO2011050551 A1 WO 2011050551A1
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Prior art keywords
transistor
thyristor
resistor
alternating current
control unit
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PCT/CN2009/076211
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French (fr)
Chinese (zh)
Inventor
姜西辉
刘建伟
首召兵
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深圳和而泰智能控制股份有限公司
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Publication of WO2011050551A1 publication Critical patent/WO2011050551A1/en

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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/02Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc
    • H02M5/04Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters
    • H02M5/22Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M5/25Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M5/257Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M5/2573Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only with control circuit
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0003Details of control, feedback or regulation circuits
    • H02M1/0006Arrangements for supplying an adequate voltage to the control circuit of converters

Definitions

  • Thyristor driving circuit device and control method thereof
  • the present invention relates to the field of circuits, and more particularly to a thyristor driving circuit and a control method therefor. Background technique
  • RC capacitors are usually used.
  • a half-bridge rectified RC-capacitor power supply circuit is usually used to drive the thyristor (because the thyristor driver generally needs to connect the power line L to the VCC).
  • the half bridge circuit can achieve this).
  • the disadvantages of this circuit are: After the 220V AC mains is stepped down by capacitors and resistors, the AC mains supply is only half a cycle effective for supporting the power supply required for the entire control system. Apply the same capacity capacitor.
  • the technical problem to be solved by the present invention is to provide a thyristor driving circuit, a device and a control method thereof with strong load capacity and low cost in view of the above-mentioned defects with poor load capacity and high cost in the prior art.
  • the technical solution adopted by the present invention to solve the technical problem thereof is: constructing a thyristor driving circuit, comprising: a driving unit, a thyristor controlled by the driving unit, a control unit for providing a driving signal to the driving unit, and
  • the control unit provides a DC power source of electric power
  • the DC power source is a DC power source obtained by AC voltage through a RC capacitor and full-wave rectification to obtain a DC voltage
  • a pin of the control unit is directly connected to the full-wave rectification.
  • An AC input receives the zero crossing detection signal of the AC.
  • the RC capacitor of the DC power source is connected in series
  • the alternating current phase line is located before the full-wave rectified AC phase line input end; the AC zero-crossing detection end of the control unit is connected to the full-wave rectified AC neutral line input end.
  • the control unit comprises a single chip microcomputer or a programmable logic device or a programmable controller or an industrial computer, and the single chip microcomputer or the programmable logic device or the programmable controller or the industrial computer passes Its input/output port is connected to the driving unit and the AC neutral input.
  • the thyristor comprises a unidirectional thyristor or a triac
  • the driving unit comprises one or two triodes or diodes
  • the control unit and the The drive unit is connected via one or two output ports.
  • the control unit and the driving unit are connected through an output port
  • the driving unit includes a transistor TR1, a transistor TR2, a resistor R4 and a resistor R5, wherein the transistor TR1 is a PNP transistor having an emitter connected to a DC voltage output terminal of the DC power source, a collector connected to a collector of the NPN transistor TR2, an emitter of the transistor TR2 being grounded, and a base of the transistor TR1 and the transistor TR2
  • the resistor R4 is connected to the output port, and one end of the resistor R5 is connected to the thyristor control electrode, and the other end is connected to the collectors of the transistor TR1 and the transistor TR2.
  • the control unit and the driving unit are connected by two output ports, and the driving unit includes a transistor TR1, a transistor TR2, a resistor R4, a resistor R5, and a resistor R6.
  • the transistor TR1 is a PNP transistor having an emitter connected to a DC voltage output terminal of the DC power source, a collector connected to a collector of the NPN transistor TR2, an emitter of the transistor TR2 being grounded, and one end of the resistor R5 Connected to the thyristor control electrode, the other end is connected to the collector of the transistor TR1 and the transistor TR2, the base of the transistor TR1 is connected to an output port through a resistor R4, and the base of the transistor TR2 passes Resistor R6 is connected to another output port.
  • the invention further relates to a device comprising a thyristor drive circuit, the thyristor drive circuit being the thyristor drive circuit of any of the above.
  • the invention also relates to a controllable driving method, a thyristor driving method, which is used for resisting the power supply of a buck power supply, comprising the following steps: A) directly connecting a pin of the control unit Connected to an AC input terminal of the full-wave rectification to obtain a zero-crossing signal of the alternating current;
  • the alternating current state is judged whether the alternating current is in its positive half cycle or in its negative half cycle.
  • the AC actual state start time is the zero-crossing time of the AC power plus a delay time; and the delay time is related to the device parameters of the resistor-capacitor step-down.
  • the thyristor driving circuit, the device and the control method thereof embodying the invention have the following beneficial effects: Since the full bridge rectification is adopted in the case of the power supply with the RC voltage reduction, the RC is used in the same parameter. Under the condition, it has strong load capacity, and can reduce the parameters of the RC device and save energy. At the same time, because its zero-crossing detection circuit is relatively simple, its cost is low. DRAWINGS
  • FIG. 1 is a circuit diagram of a driving circuit in a first embodiment of a thyristor driving circuit, apparatus, and control method thereof according to the present invention
  • FIG. 2 is a diagram showing a relationship between a zero-crossing signal and an alternating current in the first embodiment
  • Figure 3 is a flow chart of the method of the first embodiment
  • Figure 4 is a circuit diagram of a second embodiment of the present invention.
  • Figure 5 is a circuit diagram of a third embodiment of the present invention.
  • Figure 6 is a circuit diagram of a fourth embodiment of the present invention. detailed description
  • the thyristor driving circuit includes a driving unit, a thyristor controlled by the driving unit, a control unit that provides a driving signal to the driving unit, and
  • the control unit provides a DC power source of electric power
  • the DC power source is a DC power source obtained by AC power through a RC resistor and a full-wave rectification to obtain a DC voltage
  • the AC zero-cross detection terminal of the control unit is directly Connected to an AC input of the full-wave rectification.
  • the RC capacitor of the DC power source is connected in series on the AC line, which is located before the full-wave rectified AC phase line input.
  • the AC zero-crossing detection terminal of the control unit is connected to the full-wave rectified AC neutral input terminal.
  • the alternating current is input by two alternating current input terminals CN1 and CN2, and the load LOAD is connected in series with the switching end of the thyristor Q1, and is connected to the two alternating current input terminals CN1 and CN2.
  • the phase end of the AC input (ie CN1) is connected to an AC terminal of the bridge rectifier through the fuse FUSE and the RC, and the neutral terminal of the AC input (ie CN2) is directly connected to the other of the bridge rectifiers.
  • the DC voltage outputted from the DC terminal of the bridge rectifier is stabilized and filtered to obtain a DC power supply voltage.
  • the control unit is a single chip microcomputer, and is connected to external components through its I/O interface, such as the above-mentioned driving unit and the AC neutral terminal.
  • the control unit may not be a single chip microcomputer, and may be, for example, a programmable logic device (PLD), a programmable controller (PLC), an industrial computer, or the like.
  • PLD programmable logic device
  • PLC programmable controller
  • the MCU has some shortcomings, it is low in cost, flexible in use, and has a short development cycle.
  • the control unit and the driving unit are connected by an output port including a transistor TR1, a transistor TR2, a resistor R4 and a resistor R5, and the transistor TR1 is a PNP transistor and an emitter thereof.
  • the collector is connected to the collector of the NPN transistor TR2, the emitter of the transistor TR2 is grounded, and the base of the transistor TR transistor TR2 is connected and passed through the resistor R4 is connected to the output port, and one end of the resistor R5 is connected to the thyristor control electrode, and the other end is connected to the collectors of the transistor TR1 and the transistor TR2.
  • the cathode voltage of D4 is VCC+0. 7V, that is, It is said that the cathode voltage waveform of D4 is a square wave of the same frequency as the commercial power, the positive half cycle is -0.7, and the negative half cycle is VCC+0.70V. In this embodiment, it is the use of this point to realize the thyristor. Driven under the full bridge.
  • the cathode of diode D4 is directly connected to the 1/02 port of the MCU, and the other functions of the rectifier diodes D2 and D4 are clamped to protect the 1/02 port of the MCU, so the rectifier diode D4 can be directly connected.
  • the cathode is connected to the 1/02 of the single-chip microcomputer and used to detect the positive and negative half-cycle inputs of the mains. Its function is equivalent to the zero-crossing detection circuit.
  • the zero-crossing signal at 1/02 leads the AC mains for a certain time.
  • the lead time is 3.3mS, as shown in Figure 2.
  • this lead time is 3.3 mS; in the case of the negative half cycle of the alternating current, as in the case of the positive half cycle described above, the alternating current also lags the above-mentioned zero-cross detection signal by 3.3 mS.
  • FIG. 3 is a flow chart showing the control of the thyristor in the embodiment.
  • the flow control is for the thyristor all-conduction.
  • the ⁇ waveguide When the ⁇ waveguide is required, it is assumed that the chopper is required.
  • the conduction angle is ⁇ . It is only necessary to define T>3.3+TmS in the flow shown in Figure 3, so that the waveguide can be realized and applied to products that need to adjust power or speed.
  • the range of ⁇ can only be 0-6.7mS selection (this is due to the zero-crossing signal leading, the reason is not detailed);
  • a large conduction angle (0-10mS)
  • Step S11 Main program: In this step, the MCU executes its main program, which is no different from other MCUs for control purposes.
  • Step S12 Is it necessary to turn on Q1? It is judged whether or not the thyristor Q1 is required to be turned on, and if necessary, step S14 is performed; otherwise, step S13 is performed.
  • Step S13 sets the port 1/01 to a high-impedance state to turn off Q1: In this step, since it is determined that the thyristor Q1 does not need to be turned on, the driving circuit of the thyristor Q1 is connected in this embodiment. Setting the input/output port 1/01 to the high-impedance state causes the thyristor Q1 to be turned off, and returns to step S11.
  • Step S14 is half a week? In this step, since it is determined that the control thyristor Q1 needs to be turned on, the current state of the alternating current is determined, that is, whether it is in the positive half cycle, and if so, step S15 is performed; if not, it is judged to be in the negative half cycle. Step S18 is performed.
  • Step S15 Timing T: In this step, the counter in the microcontroller is started to start timing.
  • Step S16 T>3.3mS? Determine whether the timing exceeds 3.3mS. If not, return to step S15 and continue counting; otherwise, execute step S17.
  • Step S17 outputs 1lm port lmS low-level pulse to make Q1 turn on:
  • the single-chip microcomputer outputs a low-level pulse on the input/output port 1/01, and the pulse duration is lmS, so that the thyristor Q1 is turned on during the positive half cycle of the alternating current, and then returns to step S14.
  • Step S18 Timing T In this step, the counter in the microcontroller is started to start timing.
  • Step S19 T>3.3mS? Determine whether the timing exceeds 3.3mS. If not, return to step S18 and continue counting; otherwise, execute step S20.
  • Step S20 outputs a 1 m port lmS high-level pulse to turn on Q1:
  • the MCU outputs a high-level pulse on the input/output port 1/01, and the pulse duration is lmS, so that the thyristor Q1 is turned on within a negative half cycle of the alternating current, and then returns to step S14.
  • a device comprising a thyristor drive circuit, which is exactly the thyristor drive circuit previously described.
  • the control unit and the driving unit are connected by two output ports, and the driving unit includes a transistor TR1, a transistor TR2, a resistor R4, a resistor R5 and a resistor R6, and the transistor TR1 is a PNP transistor.
  • the emitter is connected to the DC voltage output end of the DC power source, the collector is connected to the collector of the NPN transistor TR2, the emitter of the transistor TR2 is grounded, and one end of the resistor R5 is connected to the controllable On the silicon gate, the other end is connected to the collectors of the transistor TR1 and the transistor TR2, the base of the transistor TR1 is connected to an output port through a resistor R4, and the base of the transistor TR2 is output through the resistor R6 and the other. Port connection.
  • the driving mode of the dual I/O port is used, and when the thyristor needs to be turned off, the input/output port 1 /01 can be set to a high level, and the input/output port 1 / 03 Set to low level to turn off the thyristor.
  • the second embodiment is substantially the same as the first embodiment.
  • Fig. 5 is a view showing a third embodiment of the present invention, in which a unidirectional thyristor is required to be controlled.
  • the working principle of the circuit in Figure 5 is that when the input/output port 1 /02 of the MCU detects that the AC mains is positive half-cycle input, the input and output port 1 /01 is set to a high level, and the unidirectional thyristor is driven. The current flows from the input and output port 1 /01 through the diode D5, the resistor R6 and the unidirectional thyristor Q2 back to the AC neutral terminal CN2, so that the unidirectional thyristor Q2 is turned on, when the unidirectional thyristor needs to be turned off. In Q2, set I/O port 1 /01 to low level. Except for the above differences, the third embodiment is substantially the same as the first embodiment.
  • FIG. 6 is a fourth embodiment of the present invention for when the output current of the input/output port I/O of the single chip satisfies the driving current of the thyristor.
  • the working principle of the circuit in Figure 6 is that when the input/output port 1 /02 detects that the mains is positive half-cycle input, if the thyristor Q1 needs to be turned on at this time, the MCU outputs a high level to the input/output port 1 /01 to make The thyristor Q1 is turned on.
  • the microcontroller When the input/output port 1 /02 detects that the mains supply is a negative half-cycle input, if the thyristor Q1 needs to be turned on at this time, the microcontroller outputs a high level to the input/output port 1 / 03 to make The thyristor Q1 is turned on.
  • the input/output port 1 /01 and the input/output port 1 / 03 of the MCU are both Set to low level to turn off the thyristor Ql.
  • the fourth embodiment is substantially the same as the first embodiment.

Abstract

A drive circuit for a silicon controlled rectifier (SCR), a device with the drive circuit for the SCR and a control method thereof. The drive circuit for the SCR includes a drive unit, the SCR (Q1) controlled by the drive unit, a control unit for providing a drive signal to the drive unit and a direct current (DC) power supply for providing power to the control unit. An alternating current (AC) is full-wave rectified after the alternating current is stepped down by a resistance-capacitance (RC) voltage-reducing circuit, so as to generate the DC power supply. One pin of the control unit is directly connected to an AC input terminal (CN1, CN2) of the full-wave rectification circuit so as to obtain an AC zero-crossing detection signal corresponding to the zero-crossing point of the alternating current. With the RC voltage-reducing circuits provided with the same circuit parameter, a higher load-carrying capability can be obtained with the drive circuit for the SCR than other drive circuits. The circuit parameters of the elements of the RC voltage-reducing circuit can be stepped down for energy saving. The zero-crossing detecting circuit is provided with a simple structure for cost reduction.

Description

可控硅驱动电路、 装置及其控制方法 技术领域  Thyristor driving circuit, device and control method thereof
本发明涉及电路领域, 更具体地说, 涉及一种可控硅驱动电路及其控制方 法。 背景技术  The present invention relates to the field of circuits, and more particularly to a thyristor driving circuit and a control method therefor. Background technique
在现有应用到可控硅的行业领域里, 特别是小家电产品行业领域, 由于 成本及体积的限制,通常都是采用阻容降压电源。但当采用阻容降压电源电路 时, 为了实现可控硅的驱动, 通常采用半桥整流式的阻容降压电源电路(因为 可控硅的驱动一般需要将电源线 L与 VCC连接在一起, 半桥电路能实现这一 点)。 这种电路的缺点是: 220V的交流市电经过电容和电阻降压后, 对于支撑 整个控制系统工作所需要的电源来说, 交流市电只有半个周期是有效的,在应 用相同容量的电容条件下, 如果采用全桥电路, 电源的带载能力将增加一倍, 这样原来的电容的容量和体积都减小到原来的一半,整个电路的待机功耗也降 减小到原来的一半; 此外, 半桥式阻容电源电路驱动可控硅的方案的另一个缺 点是其过零检测电路较为复杂, 成本较高。 发明内容  In the field of existing applications to thyristors, especially in the field of small household appliances, due to cost and volume limitations, RC capacitors are usually used. However, when a RC-capacitor power supply circuit is used, a half-bridge rectified RC-capacitor power supply circuit is usually used to drive the thyristor (because the thyristor driver generally needs to connect the power line L to the VCC). The half bridge circuit can achieve this). The disadvantages of this circuit are: After the 220V AC mains is stepped down by capacitors and resistors, the AC mains supply is only half a cycle effective for supporting the power supply required for the entire control system. Apply the same capacity capacitor. Under the condition, if the full-bridge circuit is used, the load capacity of the power supply will be doubled, so that the capacity and volume of the original capacitor are reduced to half of the original, and the standby power consumption of the entire circuit is also reduced by half; In addition, another disadvantage of the semi-bridge RC power circuit driving the thyristor is that its zero-crossing detection circuit is more complicated and costly. Summary of the invention
本发明要解决的技术问题在于,针对现有技术的上述带负载能力差、成本 较高的缺陷, 提供一种带负载能力强、 成本较低的可控硅驱动电路、 装置及其 控制方法。  The technical problem to be solved by the present invention is to provide a thyristor driving circuit, a device and a control method thereof with strong load capacity and low cost in view of the above-mentioned defects with poor load capacity and high cost in the prior art.
本发明解决其技术问题所采用的技术方案是: 构造一种可控硅驱动电路, 包括驱动单元、 受所述驱动单元控制的可控硅、 为所述驱动单元提供驱动信号 的控制单元以及为所述控制单元提供电力的直流电源,所述直流电源是由交流 电通过阻容降压后全波整流而得到直流电压的直流电源,所述控制单元的一个 引脚直接连接在所述全波整流的一个交流输入端, 取得交流的过零检测信号。  The technical solution adopted by the present invention to solve the technical problem thereof is: constructing a thyristor driving circuit, comprising: a driving unit, a thyristor controlled by the driving unit, a control unit for providing a driving signal to the driving unit, and The control unit provides a DC power source of electric power, and the DC power source is a DC power source obtained by AC voltage through a RC capacitor and full-wave rectification to obtain a DC voltage, and a pin of the control unit is directly connected to the full-wave rectification. An AC input receives the zero crossing detection signal of the AC.
在本发明所述的可控硅驱动电路中,所述直流电源的阻容降压元件串接在 所述交流电相线上、其位于所述全波整流的交流相线输入端之前; 所述控制单 元的交流过零检测端连接在所述全波整流的交流零线输入端。 In the thyristor driving circuit of the present invention, the RC capacitor of the DC power source is connected in series The alternating current phase line is located before the full-wave rectified AC phase line input end; the AC zero-crossing detection end of the control unit is connected to the full-wave rectified AC neutral line input end.
在本发明所述的可控硅驱动电路中,所述控制单元包括单片机或可编程逻 辑器件或可编程控制器或工控机,所述单片机或可编程逻辑器件或可编程控制 器或工控机通过其输入 /输出端口与所述驱动单元及所述交流零线输入端连 接。  In the thyristor driving circuit of the present invention, the control unit comprises a single chip microcomputer or a programmable logic device or a programmable controller or an industrial computer, and the single chip microcomputer or the programmable logic device or the programmable controller or the industrial computer passes Its input/output port is connected to the driving unit and the AC neutral input.
在本发明所述的可控硅驱动电路中,所述可控硅包括单向可控硅或双向可 控硅, 所述驱动单元包括一个或两个三极管或二极管; 所述控制单元与所述驱 动单元通过一个或两个输出端口连接。  In the thyristor driving circuit of the present invention, the thyristor comprises a unidirectional thyristor or a triac, the driving unit comprises one or two triodes or diodes; the control unit and the The drive unit is connected via one or two output ports.
在本发明所述的可控硅驱动电路中,所述控制单元和所述驱动单元通过一 个输出端口连接, 所述驱动单元包括晶体管 TR1、 晶体管 TR2、 电阻 R4和电阻 R5,所述晶体管 TR1为 PNP晶体管, 其发射极与所述直流电源的直流电压输出 端连接, 其集电极与 NPN型晶体管 TR2的集电极连接, 所述晶体管 TR2的发射 极接地, 所述晶体管 TR1、 晶体管 TR2的基极并接后通过所述电阻 R4与所述 输出端口连接, 所述电阻 R5的一端连接在所述可控硅控制极上, 另一端与所 述晶体管 TR1、 晶体管 TR2的集电极连接。  In the thyristor driving circuit of the present invention, the control unit and the driving unit are connected through an output port, and the driving unit includes a transistor TR1, a transistor TR2, a resistor R4 and a resistor R5, wherein the transistor TR1 is a PNP transistor having an emitter connected to a DC voltage output terminal of the DC power source, a collector connected to a collector of the NPN transistor TR2, an emitter of the transistor TR2 being grounded, and a base of the transistor TR1 and the transistor TR2 After being connected, the resistor R4 is connected to the output port, and one end of the resistor R5 is connected to the thyristor control electrode, and the other end is connected to the collectors of the transistor TR1 and the transistor TR2.
在本发明所述的可控硅驱动电路中,所述控制单元和所述驱动单元通过两 个输出端口连接, 所述驱动单元包括晶体管 TR1、 晶体管 TR2、 电阻 R4、 电阻 R5和电阻 R6,所述晶体管 TR1为 PNP晶体管,其发射极与所述直流电源的直流 电压输出端连接, 其集电极与 NPN型晶体管 TR2 的集电极连接, 所述晶体管 TR2的发射极接地, 所述电阻 R5的一端连接在所述可控硅控制极上, 另一端 与所述晶体管 TR1、 晶体管 TR2的集电极连接, 所述晶体管 TR1的基极通过电 阻 R4与一个输出端口连接,所述晶体管 TR2的基极通过电阻 R6与另一个输出 端口连接。  In the thyristor driving circuit of the present invention, the control unit and the driving unit are connected by two output ports, and the driving unit includes a transistor TR1, a transistor TR2, a resistor R4, a resistor R5, and a resistor R6. The transistor TR1 is a PNP transistor having an emitter connected to a DC voltage output terminal of the DC power source, a collector connected to a collector of the NPN transistor TR2, an emitter of the transistor TR2 being grounded, and one end of the resistor R5 Connected to the thyristor control electrode, the other end is connected to the collector of the transistor TR1 and the transistor TR2, the base of the transistor TR1 is connected to an output port through a resistor R4, and the base of the transistor TR2 passes Resistor R6 is connected to another output port.
本发明还涉及一种装置, 包括可控硅驱动电路,所述可控硅驱动电路为上 述任意一项所述的可控硅驱动电路。  The invention further relates to a device comprising a thyristor drive circuit, the thyristor drive circuit being the thyristor drive circuit of any of the above.
本发明还涉及一种可控驱动方法,一种可控硅驱动方法,该方法用于阻容 降压电源供电的情况, 包括如下步骤: A )通过将控制单元的一个引脚直接连 接在所述全波整流的一个交流输入端, 取得交流电的过零信号; The invention also relates to a controllable driving method, a thyristor driving method, which is used for resisting the power supply of a buck power supply, comprising the following steps: A) directly connecting a pin of the control unit Connected to an AC input terminal of the full-wave rectification to obtain a zero-crossing signal of the alternating current;
B )由所述交流的过零信号得到交流电实际状态,依据所述交流电实际 状态, 输出相应的驱动信号到可控硅驱动单元, 控制所述可控硅导通。  B) obtaining an actual state of the alternating current from the zero-crossing signal of the alternating current, and outputting a corresponding driving signal to the thyristor driving unit according to the actual state of the alternating current to control the conduction of the thyristor.
在本发明所述的可控硅驱动方法, 所述步骤 A )中判断所述交流电状态是 判断所述交流电处于其正半周还是处于其负半周。  In the thyristor driving method of the present invention, in the step A), the alternating current state is judged whether the alternating current is in its positive half cycle or in its negative half cycle.
在本发明所述的可控硅驱动方法,所述交流电实际状态开始时间为所述交 流电的过零时间加上延迟时间; 所述延迟时间与所述阻容降压的器件参数相 关。  In the thyristor driving method of the present invention, the AC actual state start time is the zero-crossing time of the AC power plus a delay time; and the delay time is related to the device parameters of the resistor-capacitor step-down.
实施本发明的可控硅驱动电路、 装置及其控制方法, 具有以下有益效果: 由于在阻容降压的电源的情况下, 采用了全桥式整流, 所以在采用同样参数的 阻容降压的条件下其带负载能力较强, 并可以减小阻容降压器件的参数, 节省 能源; 同时由于其过零检测电路较为筒单, 因此其成本较低。 附图说明  The thyristor driving circuit, the device and the control method thereof embodying the invention have the following beneficial effects: Since the full bridge rectification is adopted in the case of the power supply with the RC voltage reduction, the RC is used in the same parameter. Under the condition, it has strong load capacity, and can reduce the parameters of the RC device and save energy. At the same time, because its zero-crossing detection circuit is relatively simple, its cost is low. DRAWINGS
图 1是本发明可控硅驱动电路、装置及其控制方法第一实施例中驱动电路 的电路图;  1 is a circuit diagram of a driving circuit in a first embodiment of a thyristor driving circuit, apparatus, and control method thereof according to the present invention;
图 2是所述第一实施例中过零信号与交流电的关系图;  2 is a diagram showing a relationship between a zero-crossing signal and an alternating current in the first embodiment;
图 3是所述第一实施例方法流程图;  Figure 3 is a flow chart of the method of the first embodiment;
图 4是本发明第二实施例的电路图;  Figure 4 is a circuit diagram of a second embodiment of the present invention;
图 5是本发明第三实施例的电路图;  Figure 5 is a circuit diagram of a third embodiment of the present invention;
图 6是本发明第四实施例的电路图。 具体实施方式  Figure 6 is a circuit diagram of a fourth embodiment of the present invention. detailed description
下面将结合附图对本发明实施例作进一步说明。  The embodiments of the present invention will be further described below in conjunction with the accompanying drawings.
如图 1所示,在本发明的第一实施例中,该可控硅驱动电路包括驱动单元、 受所述驱动单元控制的可控硅、为所述驱动单元提供驱动信号的控制单元以及 为所述控制单元提供电力的直流电源,所述直流电源是由交流电通过阻容降压 后全波整流而得到直流电压的直流电源,所述控制单元的交流过零检测端直接 连接在所述全波整流的一个交流输入端。所述直流电源的阻容降压元件串接在 所述交流电相线上、其位于所述全波整流的交流相线输入端之前。所述控制单 元的交流过零检测端连接在所述全波整流的交流零线输入端。具体而言, 交流 电由两个交流输入端 CN1、 CN2输入, 负载 LOAD与可控硅 Q1的开关端串联后 并接在上述两个交流输入端 CN1、 CN2上。 交流输入端的相线端 (即 CN1 )通 过保险管 FUSE及阻容降压后连接到桥式整流的一个交流端, 交流输入端的零 线端(即 CN2 )直接连接到上述桥式整流的另一个交流端, 上述桥式整流的直 流端输出的直流电压通过稳压、 滤波而得到直流电源电压。在本发明第一实施 例中, 上述控制单元是单片机, 通过其 I /O接口与外接的各部件相连, 例如上 述的驱动单元及交流零线端。 当然, 在其他实施例中, 该控制单元也可以不是 单片机, 例如也可以是可编程逻辑器件 (PLD )、 可编程控制器(PLC )或工控 机等等。 虽然单片机有些不足之处, 但是, 其成本低, 使用灵活, 并且其开发 周期较短。 As shown in FIG. 1, in the first embodiment of the present invention, the thyristor driving circuit includes a driving unit, a thyristor controlled by the driving unit, a control unit that provides a driving signal to the driving unit, and The control unit provides a DC power source of electric power, and the DC power source is a DC power source obtained by AC power through a RC resistor and a full-wave rectification to obtain a DC voltage, and the AC zero-cross detection terminal of the control unit is directly Connected to an AC input of the full-wave rectification. The RC capacitor of the DC power source is connected in series on the AC line, which is located before the full-wave rectified AC phase line input. The AC zero-crossing detection terminal of the control unit is connected to the full-wave rectified AC neutral input terminal. Specifically, the alternating current is input by two alternating current input terminals CN1 and CN2, and the load LOAD is connected in series with the switching end of the thyristor Q1, and is connected to the two alternating current input terminals CN1 and CN2. The phase end of the AC input (ie CN1) is connected to an AC terminal of the bridge rectifier through the fuse FUSE and the RC, and the neutral terminal of the AC input (ie CN2) is directly connected to the other of the bridge rectifiers. At the AC end, the DC voltage outputted from the DC terminal of the bridge rectifier is stabilized and filtered to obtain a DC power supply voltage. In the first embodiment of the present invention, the control unit is a single chip microcomputer, and is connected to external components through its I/O interface, such as the above-mentioned driving unit and the AC neutral terminal. Of course, in other embodiments, the control unit may not be a single chip microcomputer, and may be, for example, a programmable logic device (PLD), a programmable controller (PLC), an industrial computer, or the like. Although the MCU has some shortcomings, it is low in cost, flexible in use, and has a short development cycle.
在第一实施例中, 所述控制单元和所述驱动单元通过一个输出端口连接, 所述驱动单元包括晶体管 TR1、晶体管 TR2、电阻 R4和电阻 R5,所述晶体管 TR1 为 PNP晶体管, 其发射极与所述直流电源的直流电压输出端连接, 其集电极与 NPN型晶体管 TR2的集电极连接, 所述晶体管 TR2的发射极接地, 所述晶体管 TR 晶体管 TR2的基极并接后通过所述电阻 R4与所述输出端口连接, 所述电 阻 R5的一端连接在所述可控硅控制极上, 另一端与所述晶体管 TR1、 晶体管 TR2的集电极连接。  In the first embodiment, the control unit and the driving unit are connected by an output port including a transistor TR1, a transistor TR2, a resistor R4 and a resistor R5, and the transistor TR1 is a PNP transistor and an emitter thereof. Connected to the DC voltage output terminal of the DC power source, the collector is connected to the collector of the NPN transistor TR2, the emitter of the transistor TR2 is grounded, and the base of the transistor TR transistor TR2 is connected and passed through the resistor R4 is connected to the output port, and one end of the resistor R5 is connected to the thyristor control electrode, and the other end is connected to the collectors of the transistor TR1 and the transistor TR2.
在图 1中, 当 CN1的电压高于 CN2的电压时, 为交流市电的正半周,反之 为负半周。 当市电正半周输入时, 电流由交流相线端 CN1经过保险管 FUSE、 电容 Cl、 电阻 Rl、 整流二极管 Dl、 稳压二极管 Z1和整流二极管 D4流回交流 零线端 CN2。此时的整流二极管 D4阴极断电压为 -0. 7V (相对于控制系统的地)。 当市电负半周输入时, 电流由交流零线端 CN2经过 D2、 Zl、 D3、 Rl、 CI和 FUSE 流回交流相线端 CN1 , 此时 D4的阴极电压为 VCC+0. 7V,也就是说 D4的阴极电 压波形是与市电同频率的方波, 正半周为 -0. 7 , 负半周时为 VCC+0. 7V, 在本 实施例中,正是利用这点来实现可控硅在全桥下驱动的。当市电正半周输入时, 1/01输出低电平(1/01的输出由单片机通过软件来控制), 三极管 TR1导通, 由于此时 D4的阴极电压为 -0.7V (与 CN2同电压), 所以可控硅 Q1的驱动电流 由 VCC经过 TR1、 R5和 Q1流回 CN2, 从而使 Q1导通, 当市电负半周输入时, 1/01输出高电平, 三极管 TR2导通, 由于此时 D4的阴极电压为 VCC+O.7V (与 CN2同电压), 所以可控硅 Q1的驱动电流由 CN2经过 Ql、 R5和 TR2和流到系 统的地, 从而使 Q1导通。 此外, 在图 1中, 还将二极管 D4的阴极直接接到单 片机的 1/02口上,整流二极管 D2和 D4另一个作用是箝位,保护单片机的 1/02 口, 因此可以直接将整流二极管 D4的阴极接到单片机的 1/02上, 用来检测市 电的正、 负半周输入, 其作用相当于过零检测电路, 可以看到在本实施例中, 除了电源电路外, 不再需要任何其他器件就可以实现过零检测,相对于现有的 过零检测电路来说, 成本大大降低了。 当 1/02检测到是正半周输入时, 如果 此时需要导通 Q1, 单片机就输出低电平给 1/01来使 Q1导通, 当 1/02检测到 市电是负半周输入时, 如果此时需要导通 Q1, 单片机就输出高电平给 1/01来 使 Q1导通, 无论市电是正半周输入, 还是负半周输入时, 如果不需要导通 Q1 时, 就将单片机的 1/01 口置为高阻状态, 使 TR1和 TR2都不导通, 从而实现 关断 Q1的目的。 In FIG. 1, when the voltage of CN1 is higher than the voltage of CN2, it is the positive half cycle of the AC mains, and vice versa. When the mains input is half a week, the current flows from the AC phase line terminal CN1 through the fuse FUSE, the capacitor Cl, the resistor Rl, the rectifier diode Dl, the Zener diode Z1 and the rectifier diode D4 back to the AC neutral terminal CN2. At this time, the rectifier diode D4 has a cathode breaking voltage of -0.7 V (relative to the ground of the control system). When the mains input is negative for half a cycle, the current flows from the AC neutral terminal CN2 through D2, Zl, D3, Rl, CI, and FUSE back to the AC phase line terminal CN1. At this time, the cathode voltage of D4 is VCC+0. 7V, that is, It is said that the cathode voltage waveform of D4 is a square wave of the same frequency as the commercial power, the positive half cycle is -0.7, and the negative half cycle is VCC+0.70V. In this embodiment, it is the use of this point to realize the thyristor. Driven under the full bridge. When the mains is being input for half a week, 1/01 output low level (the output of 1/01 is controlled by the MCU through software), the transistor TR1 is turned on, because the cathode voltage of D4 is -0.7V (the same voltage as CN2), so the thyristor Q1 The driving current is returned to CN2 through VCC through TR1, R5 and Q1, so that Q1 is turned on. When the mains input is negative for half a cycle, 1/01 outputs a high level, and the transistor TR2 is turned on. Since the cathode voltage of D4 is VCC at this time. +O.7V (same voltage as CN2), so the drive current of thyristor Q1 is turned on by CN2 through Ql, R5 and TR2 and to the ground of the system, so that Q1 is turned on. In addition, in Figure 1, the cathode of diode D4 is directly connected to the 1/02 port of the MCU, and the other functions of the rectifier diodes D2 and D4 are clamped to protect the 1/02 port of the MCU, so the rectifier diode D4 can be directly connected. The cathode is connected to the 1/02 of the single-chip microcomputer and used to detect the positive and negative half-cycle inputs of the mains. Its function is equivalent to the zero-crossing detection circuit. It can be seen that in this embodiment, no need for any power supply circuit. Other devices can achieve zero-crossing detection, which is much less expensive than existing zero-crossing detection circuits. When 1/02 detects positive half-cycle input, if it needs to turn on Q1 at this time, the MCU will output low level to 1/01 to make Q1 turn on. When 1/02 detects that the mains supply is negative half-cycle input, if At this time, it is necessary to turn on Q1, and the MCU outputs a high level to 1/01 to make Q1 turn on. No matter whether the mains is positive half-cycle input or negative half-cycle input, if it is not required to turn on Q1, it will be 1/1 of the MCU. 01 is placed in a high-impedance state, so that TR1 and TR2 are not turned on, thus achieving the purpose of turning off Q1.
在实际使用过程中, 由于电容 Cl、 C2和 C3的存在, 导致 1/02处的过零 信号超前交流市电一定的时间, 在本实施例中这个超前时间为 3.3mS, 图 2所 示的过零信号与交流市电的关系图。从图 2所示可知, 当过零信号刚开始变为 低电平时(单片机认为检测到了正半周时), 实际上市电并不是正半周,还需要 再经过上述超前时间交流市电才真正进入了正半周,在本实施例中这个超前时 间为 3.3mS; 在交流电负半周的情况与上述正半周的情况一样, 其交流电同样 滞后上述过零检测信号 3.3mS。  In actual use, due to the presence of capacitors Cl, C2 and C3, the zero-crossing signal at 1/02 leads the AC mains for a certain time. In this embodiment, the lead time is 3.3mS, as shown in Figure 2. Diagram of zero-crossing signals and AC mains. As can be seen from Figure 2, when the zero-crossing signal starts to change to a low level (the microcontroller thinks that the positive half-cycle is detected), in fact, the commercial power is not half a week, and it needs to go through the above-mentioned advanced time to exchange the mains. In the positive half cycle, in the present embodiment, this lead time is 3.3 mS; in the case of the negative half cycle of the alternating current, as in the case of the positive half cycle described above, the alternating current also lags the above-mentioned zero-cross detection signal by 3.3 mS.
图 3示出了本实施例中对可控硅控制的流程图, 在图 3中, 流程控制是 针对可控硅全导通来说的,当需要斩波导通时,假设需要斩波时的导通角为 τ , 只需要在图 3所示流程中限定 T>3.3+TmS, 即可实现斩波导通, 从而应用到 需要调节功率或转速的产品中, 但是要注意 τ的范围只能在 0-6.7mS 内选取 (这是由于过零信号超前所致, 原因不详述); 当需要大导通角时(0-10mS) , 实 际是需要减小负载两端的电压, 因此可以通过丟波来补偿, 就是在需要大导通 角时, 把某个周期或半周期的市电关掉来达到减小加在负载两端的电压目的。 FIG. 3 is a flow chart showing the control of the thyristor in the embodiment. In FIG. 3, the flow control is for the thyristor all-conduction. When the 斩 waveguide is required, it is assumed that the chopper is required. The conduction angle is τ. It is only necessary to define T>3.3+TmS in the flow shown in Figure 3, so that the waveguide can be realized and applied to products that need to adjust power or speed. However, it should be noted that the range of τ can only be 0-6.7mS selection (this is due to the zero-crossing signal leading, the reason is not detailed); When a large conduction angle is required (0-10mS), It is necessary to reduce the voltage across the load, so it can be compensated by loss of wave, that is, when a large conduction angle is required, the utility power of a certain cycle or half cycle is turned off to reduce the voltage applied to both ends of the load. .
在图 3中本实施例方法中包括如下步骤:  In the method of this embodiment in FIG. 3, the following steps are included:
步骤 S11 主程序: 在本步骤中, 单片机执行其主程序, 这与其他作控制 用途的单片机没有差别。  Step S11 Main program: In this step, the MCU executes its main program, which is no different from other MCUs for control purposes.
步骤 S12是否要导通 Q1? 判断是否需要可控硅 Q1导通, 如果需要, 执行 步骤 S14; 否则执行步骤 S13。  Step S12: Is it necessary to turn on Q1? It is judged whether or not the thyristor Q1 is required to be turned on, and if necessary, step S14 is performed; otherwise, step S13 is performed.
步骤 S13 将 1/01 口置为高阻状态使 Q1关断: 在本步骤中, 由于判断不 需要使得可控硅 Q1导通, 因此, 将本实施例中与可控硅 Q1的驱动电路连接输 入输出端口 1/01设置为高阻状态使得可控硅 Q1关断, 并返回步骤 Sll。  Step S13 sets the port 1/01 to a high-impedance state to turn off Q1: In this step, since it is determined that the thyristor Q1 does not need to be turned on, the driving circuit of the thyristor Q1 is connected in this embodiment. Setting the input/output port 1/01 to the high-impedance state causes the thyristor Q1 to be turned off, and returns to step S11.
步骤 S14正半周?在本步骤中, 由于判断需要控制可控硅 Q1导通, 因此, 判断交流电的当前状态, 即判断其是否处于正半周, 如果是, 执行步骤 S15; 如果不是, 则判为其处于负半周, 执行步骤 S18。  Step S14 is half a week? In this step, since it is determined that the control thyristor Q1 needs to be turned on, the current state of the alternating current is determined, that is, whether it is in the positive half cycle, and if so, step S15 is performed; if not, it is judged to be in the negative half cycle. Step S18 is performed.
步骤 S15 计时 T: 在本步骤中, 启动单片机中的计数器开始计时。  Step S15 Timing T: In this step, the counter in the microcontroller is started to start timing.
步骤 S16 T>3.3mS? 判断计时是否超过 3.3mS, 如未超过, 返回步骤 S15, 继续计时; 否则, 执行步骤 S17。  Step S16 T>3.3mS? Determine whether the timing exceeds 3.3mS. If not, return to step S15 and continue counting; otherwise, execute step S17.
步骤 S17 将 1/01 口输出 lmS低电平脉沖使 Q1导通: 在本步骤中, 单片 机在上述输入输出端口 1/01上输出低电平脉沖, 该脉沖持续时间为 lmS, 使 得可控硅 Q1在交流电正半周内导通, 之后, 返回步骤 S14。  Step S17 outputs 1lm port lmS low-level pulse to make Q1 turn on: In this step, the single-chip microcomputer outputs a low-level pulse on the input/output port 1/01, and the pulse duration is lmS, so that the thyristor Q1 is turned on during the positive half cycle of the alternating current, and then returns to step S14.
步骤 S18 计时 T: 在本步骤中, 启动单片机中的计数器开始计时。  Step S18 Timing T: In this step, the counter in the microcontroller is started to start timing.
步骤 S19 T>3.3mS? 判断计时是否超过 3.3mS, 如未超过, 返回步骤 S18, 继续计时; 否则, 执行步骤 S20。  Step S19 T>3.3mS? Determine whether the timing exceeds 3.3mS. If not, return to step S18 and continue counting; otherwise, execute step S20.
步骤 S20 将 1/01 口输出 lmS高电平脉沖使 Q1导通: 在本步骤中, 单片 机在上述输入输出端口 1/01上输出高电平脉沖, 该脉沖持续时间为 lmS, 使 得可控硅 Q1在交流电负半周内导通, 之后, 返回步骤 S14。  Step S20 outputs a 1 m port lmS high-level pulse to turn on Q1: In this step, the MCU outputs a high-level pulse on the input/output port 1/01, and the pulse duration is lmS, so that the thyristor Q1 is turned on within a negative half cycle of the alternating current, and then returns to step S14.
在第一实施例中, 还包括一种装置, 该装置包括可控硅驱动电路, 该可控 硅驱动电路正好是前面所述的可控硅驱动电路。  In the first embodiment, there is further provided a device comprising a thyristor drive circuit, which is exactly the thyristor drive circuit previously described.
图 4示出了本发明第二实施例的可控硅驱动电路图,第二实施例在当单片 机的 I /O口不能置为高阻状态时, 采用的方案。 在第二实施例中, 所述控制单 元和所述驱动单元通过两个输出端口连接, 所述驱动单元包括晶体管 TR1、 晶 体管 TR2、 电阻 R4、 电阻 R5和电阻 R6,所述晶体管 TR1为 PNP晶体管, 其发 射极与所述直流电源的直流电压输出端连接, 其集电极与 NPN 型晶体管 TR2 的集电极连接, 所述晶体管 TR2的发射极接地, 所述电阻 R5的一端连接在所 述可控硅控制极上, 另一端与所述晶体管 TR1、 晶体管 TR2的集电极连接, 所 述晶体管 TR1的基极通过电阻 R4与一个输出端口连接, 所述晶体管 TR2的基 极通过电阻 R6与另一个输出端口连接。 即在第二实施例中, 使用双 I /O口的 驱动方式, 当需要关断可控硅的时候, 可以将输入输出端口 1 /01置为高电平, 同时将输入输出端口 1 /03置为低电平, 从而实现关断可控硅。 除上述不同之 处, 第二实施例与第一实施例大致相同。 4 is a circuit diagram of a thyristor driving circuit according to a second embodiment of the present invention, and the second embodiment is in a single piece The scheme adopted when the I/O port of the machine cannot be placed in a high-impedance state. In the second embodiment, the control unit and the driving unit are connected by two output ports, and the driving unit includes a transistor TR1, a transistor TR2, a resistor R4, a resistor R5 and a resistor R6, and the transistor TR1 is a PNP transistor. The emitter is connected to the DC voltage output end of the DC power source, the collector is connected to the collector of the NPN transistor TR2, the emitter of the transistor TR2 is grounded, and one end of the resistor R5 is connected to the controllable On the silicon gate, the other end is connected to the collectors of the transistor TR1 and the transistor TR2, the base of the transistor TR1 is connected to an output port through a resistor R4, and the base of the transistor TR2 is output through the resistor R6 and the other. Port connection. That is, in the second embodiment, the driving mode of the dual I/O port is used, and when the thyristor needs to be turned off, the input/output port 1 /01 can be set to a high level, and the input/output port 1 / 03 Set to low level to turn off the thyristor. Except for the above differences, the second embodiment is substantially the same as the first embodiment.
图 5是本发明第三实施例中,在本发明第三实施例中,需要控制的是单向 可控硅。 图 5中电路的工作原理是当单片机的输入输出端口 1 /02口检测到交 流市电是正半周输入的时候, 将输入输出端口 1 /01 口置为高电平, 单向可控 硅的驱动电流由输入输出端口 1 /01经过二极管 D5、 电阻 R6和单向可控硅 Q2 流回到交流零线端 CN2 , 从而使单向可控硅 Q2导通, 当需要关断单向可控硅 Q2的时候, 将输入输出端口 1 /01置为低电平即可。 除上述不同之处, 第三实 施例与第一实施例大致相同。  Fig. 5 is a view showing a third embodiment of the present invention, in which a unidirectional thyristor is required to be controlled. The working principle of the circuit in Figure 5 is that when the input/output port 1 /02 of the MCU detects that the AC mains is positive half-cycle input, the input and output port 1 /01 is set to a high level, and the unidirectional thyristor is driven. The current flows from the input and output port 1 /01 through the diode D5, the resistor R6 and the unidirectional thyristor Q2 back to the AC neutral terminal CN2, so that the unidirectional thyristor Q2 is turned on, when the unidirectional thyristor needs to be turned off. In Q2, set I/O port 1 /01 to low level. Except for the above differences, the third embodiment is substantially the same as the first embodiment.
图 6是本发明第四实施例,用于当单片机的输入输出端口 I /O的输出电流 满足可控硅的驱动电流时。 图 6中电路的工作原理是当输入输出端口 1 /02检 测到市电是正半周输入时, 如果此时需要导通可控硅 Q1 , 单片机就输出高电 平给输入输出端口 1 /01来使可控硅 Q1导通, 当输入输出端口 1 /02检测到市 电是负半周输入时, 如果此时需要导通可控硅 Q1 , 单片机就输出高电平给输 入输出端口 1 /03来使可控硅 Q1导通, 无论市电是正半周输入,还是负半周输 入时,如果不需要导通可控硅 Q1时, 就将单片机的输入输出端口 1 /01和输入 输出端口 1 /03口都置为低电平, 从而关断可控硅 Ql。 除上述不同之处, 第四 实施例与第一实施例大致相同。 细, 但并不能因此而理解为对本发明专利范围的限制。 应当指出的是, 对于本 领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变 形和改进, 这些都属于本发明的保护范围。 因此, 本发明专利的保护范围应以 所附权利要求为准。 6 is a fourth embodiment of the present invention for when the output current of the input/output port I/O of the single chip satisfies the driving current of the thyristor. The working principle of the circuit in Figure 6 is that when the input/output port 1 /02 detects that the mains is positive half-cycle input, if the thyristor Q1 needs to be turned on at this time, the MCU outputs a high level to the input/output port 1 /01 to make The thyristor Q1 is turned on. When the input/output port 1 /02 detects that the mains supply is a negative half-cycle input, if the thyristor Q1 needs to be turned on at this time, the microcontroller outputs a high level to the input/output port 1 / 03 to make The thyristor Q1 is turned on. When the mains is positive half-cycle input or negative half-cycle input, if the thyristor Q1 is not required to be turned on, the input/output port 1 /01 and the input/output port 1 / 03 of the MCU are both Set to low level to turn off the thyristor Ql. Except for the above differences, the fourth embodiment is substantially the same as the first embodiment. It is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the appended claims.

Claims

权利要求书 Claim
1、一种可控硅驱动电路, 包括驱动单元、 受所述驱动单元控制的可控硅、 为所述驱动单元提供驱动信号的控制单元以及为所述控制单元提供电力的直 流电源, 其特征在于, 所述直流电源是由交流电通过阻容降压后全波整流而得 到直流电压的直流电源,所述控制单元的一个引脚直接连接在所述全波整流的 一个交流输入端, 取得交流的过零检测信号。  A thyristor driving circuit comprising: a driving unit, a thyristor controlled by the driving unit, a control unit for providing a driving signal to the driving unit, and a DC power supply for supplying power to the control unit, characterized in that The DC power source is a DC power source that obtains a DC voltage by alternating current power through a full-wave rectification after RC, and a pin of the control unit is directly connected to an AC input terminal of the full-wave rectification to obtain an AC. Zero crossing detection signal.
2、 根据权利要求 1所述的可控硅驱动电路, 其特征在于, 所述直流电源 的阻容降压元件串接在所述交流电相线上、其位于所述全波整流的交流相线输 入端之前;所述控制单元的交流过零检测端连接在所述全波整流的交流零线输 入端。  2. The thyristor driving circuit according to claim 1, wherein the RC capacitor of the DC power source is connected in series on the AC line, and the AC phase line of the full-wave rectification is located Before the input end; the AC zero-cross detection end of the control unit is connected to the full-wave rectified AC neutral input.
3、 根据权利要求 2所述的可控硅驱动电路, 其特征在于, 所述控制单元 包括单片机或可编程逻辑器件或可编程控制器或工控机,所述单片机或可编程 逻辑器件或可编程控制器或工控机通过其输入 /输出端口与所述驱动单元及所 述交流零线输入端连接。  3. The thyristor driving circuit according to claim 2, wherein the control unit comprises a single chip microcomputer or a programmable logic device or a programmable controller or an industrial computer, and the single chip microcomputer or the programmable logic device or the programmable The controller or the industrial computer is connected to the drive unit and the AC neutral input through its input/output port.
4、 根据权利要求 3所述的可控硅驱动电路, 其特征在于, 所述可控硅包 括单向可控硅或双向可控硅, 所述驱动单元包括一个或两个三极管或二极管; 所述控制单元与所述驱动单元通过一个或两个输出端口连接。  The thyristor driving circuit according to claim 3, wherein the thyristor comprises a unidirectional thyristor or a triac, and the driving unit comprises one or two triodes or diodes; The control unit is connected to the drive unit via one or two output ports.
5、 根据权利要求 4所述的可控硅驱动电路, 其特征在于, 所述控制单元 和所述驱动单元通过一个输出端口连接, 所述驱动单元包括晶体管 TR1、 晶体 管 TR2、 电阻 R4和电阻 R5,所述晶体管 TR1为 PNP晶体管, 其发射极与所述直 流电源的直流电压输出端连接, 其集电极与 NPN型晶体管 TR2的集电极连接, 所述晶体管 TR2的发射极接地, 所述晶体管 TR1、 晶体管 TR2的基极并接后通 过所述电阻 R4与所述输出端口连接,所述电阻 R5的一端连接在所述可控硅控 制极上, 另一端与所述晶体管 TR1、 晶体管 TR2的集电极连接。  The thyristor driving circuit according to claim 4, wherein the control unit and the driving unit are connected by an output port, and the driving unit comprises a transistor TR1, a transistor TR2, a resistor R4, and a resistor R5. The transistor TR1 is a PNP transistor having an emitter connected to a DC voltage output terminal of the DC power source, a collector connected to a collector of the NPN transistor TR2, an emitter of the transistor TR2 being grounded, and the transistor TR1 The base of the transistor TR2 is connected in parallel and connected to the output port through the resistor R4. One end of the resistor R5 is connected to the thyristor control pole, and the other end is connected with the transistor TR1 and the transistor TR2. Electrode connection.
6、 根据权利要求 4所述的可控硅驱动电路, 其特征在于, 所述控制单元 和所述驱动单元通过两个输出端口连接, 所述驱动单元包括晶体管 TR1、 晶体 管 TR2、 电阻 R4、 电阻 R5和电阻 R6,所述晶体管 TR1为 PNP晶体管, 其发射 极与所述直流电源的直流电压输出端连接,其集电极与 NPN型晶体管 TR2的集 电极连接, 所述晶体管 TR2的发射极接地, 所述电阻 R5的一端连接在所述可 控硅控制极上, 另一端与所述晶体管 TR1、 晶体管 TR2的集电极连接, 所述晶 体管 TR1的基极通过电阻 R4与一个输出端口连接, 所述晶体管 TR2的基极通 过电阻 R6与另一个输出端口连接。 The thyristor driving circuit according to claim 4, wherein the control unit and the driving unit are connected by two output ports, and the driving unit comprises a transistor TR1, a transistor TR2, a resistor R4, and a resistor. R5 and resistor R6, the transistor TR1 is a PNP transistor, the emitter thereof is connected to the DC voltage output end of the DC power source, and the collector and the set of the NPN transistor TR2 are An electrode is connected, an emitter of the transistor TR2 is grounded, one end of the resistor R5 is connected to the thyristor control electrode, and the other end is connected to the collector of the transistor TR1 and the transistor TR2, and the base of the transistor TR1 The pole is connected to an output port through a resistor R4, and the base of the transistor TR2 is connected to the other output port through a resistor R6.
7、 一种装置, 包括可控硅驱动电路, 其特征在于, 所述可控硅驱动电路 为如权利要求 1-6任意一项所述的可控硅驱动电路。  A device comprising a thyristor driving circuit, wherein the thyristor driving circuit is the thyristor driving circuit according to any one of claims 1-6.
8、 一种可控硅驱动方法, 该方法用于阻容降压电源供电的情况, 其特征 在于, 包括如下步骤:  8. A thyristor driving method, wherein the method is used to resist a power supply of a step-down power supply, and the method comprises the following steps:
A )通过将控制单元的一个引脚直接连接在所述全波整流的一个交流输 入端, 取得交流电的过零信号;  A) obtaining a zero-crossing signal of the alternating current by directly connecting a pin of the control unit to an alternating current input of the full-wave rectification;
B )由所述交流的过零信号得到交流电实际状态,依据所述交流电实际 状态, 输出相应的驱动信号到可控硅驱动单元, 控制所述可控硅导通。  B) obtaining an actual state of the alternating current from the zero-crossing signal of the alternating current, and outputting a corresponding driving signal to the thyristor driving unit according to the actual state of the alternating current to control the conduction of the thyristor.
9、 根据权利要求 8所述的可控硅驱动方法, 其特征在于, 所述步骤 A ) 中判断所述交流电状态是判断所述交流电处于其正半周还是处于其负半周。  The thyristor driving method according to claim 8, wherein the determining the alternating current state in the step A) is determining whether the alternating current is in its positive half cycle or in its negative half cycle.
10、根据权利要求 9所述的可控硅驱动方法, 其特征在于, 所述交流电实 际状态开始时间为所述交流电的过零时间加上延迟时间;所述延迟时间与所述  The thyristor driving method according to claim 9, wherein the AC actual state start time is a zero crossing time of the alternating current plus a delay time; the delay time is
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