WO2011049993A2 - Rf isolation for power circuitry - Google Patents
Rf isolation for power circuitry Download PDFInfo
- Publication number
- WO2011049993A2 WO2011049993A2 PCT/US2010/053263 US2010053263W WO2011049993A2 WO 2011049993 A2 WO2011049993 A2 WO 2011049993A2 US 2010053263 W US2010053263 W US 2010053263W WO 2011049993 A2 WO2011049993 A2 WO 2011049993A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- frequency
- signal
- isolated power
- secondary winding
- primary winding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
- H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
- H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
- H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/09—Filters comprising mutual inductance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/36—Circuit arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
Definitions
- Plasma has long been employed to process substrates (e.g., wafers) into substrates.
- a substrate may be placed onto an RF chuck for plasma processing inside a plasma processing chamber.
- the RF chuck may be biased with an RF signal, using RF voltages in the range from tens to thousands of volts and RF frequencies in the range from tens of KHz to hundreds of MHz. Since the RF chuck also acts as a workpiecc holder, proper control of the RF chuck temperature is an important consideration to ensure repeatable process results.
- the RF chuck's temperature is maintained by one or more electric heaters, which may be integrated or coupled with the RF chuck.
- Electrical power to the electric heater is typically obtained from line AC voltage via an appropriate control circuit to maintain the RF chuck at a desired temperature range.
- the electric heater may be powered by DC, line frequency (e.g., 50/60 Hz AC) or KHz range AC power.
- the DC/low frequency power needs to be coupled to the RF chuck assembly, which is also simultaneously subject to substantial levels of RF power cither by stray coupling or by direct connection.
- RF isolation is required.
- FIG. 1 shows relevant portions of an example system that employs AC line (e.g., 50/60 Hz) voltages or DC voltages to power a heater or other load circuits at the RF hot or "high side".
- AC line voltages or DC voltages are supplied via leads 102 and 104 to RF filter circuit 106.
- RF filter circuit 106 is shown to be a single-channel (includes 2 wires for 1 complete circuit to power 1 heater zone), dual- frequency filter and may include L-C circuits of a known design to present a high impedance to RF frequencies of interest (e.g., 2 MHz and 13.5 MHz) such that a relative RF short to ground via leads 102 and 104 and any attached circuitry, e.g. heater control/powering circuitry is effectively prevented.
- these RF frequencies are coupled to heater 1 14 via lead 1 16 as shown.
- 1 14 is the load including the heater and high side control circuitry.
- 1 1 represents a leakage path, such as stray capacitance that would allow RF from the plasma or applied to the chuck to flow back via the heater load, for example.
- RF filter 1 6 may have different designs and multiple CT/L RX-P 188PCT stages to handle a wide range of discreet RF frequencies. The operation of RF filter 106 in its various implementations is basically known technology and will not be elaborated here.
- Filter outputs 1 10 and 1 12 provides power to a load, e.g., heater, 1 14.
- a control circuit (not shown) may be coupled to leads 102 and 104 to turn on/off the input AC line voltages or DC voltages to control the temperature of an RF chuck, for example. The control may be performed in a proportional or in a binary on/off manner. Temperature sensing of the RF chuck may be employed as a feedback signal to the control circuit, for example.
- RF frequency tuning employs a range of frequencies during operation, thus making the RF isolation filter design significantly more challenging and complex due to the need to handle variable RF frequencies (and hence a wide range of RF impedances) and the desire to maintain system-to-system RF impedance and attenuation consistency.
- the design task is seriously complicated by the magnitude of the RF signal, which may be up to the range of thousands of volts and up to the range of thousands of watts.
- Fig. I shows relevant portions of an example prior art system that employs AC line (e.g., 50/60 Hz) voltages or DC voltages to power a heater or other load circuits.
- AC line e.g., 50/60 Hz
- FIG. 2 shows, in accordance with an embodiment of the present invention, relevant portions of an isolation transformer implementation to provide high DC or intermediate frequency AC power to a load that is also coupled to one or more high frequency RF signals.
- Figs. 3A-3C show, in accordance with embodiments of the invention, some example control schemes.
- Embodiments of the invention employ an innovative approach to RF isolation in a high power, high frequency environment.
- an AC source power signal is rectified into a DC power signal then modulated into an intermediate frequency power signal to be supplied to the primary winding of an isolation transformer.
- the DC power signal may be a true DC power signal (i.e., having no frequency or ripple component similar to that supplied by a battery) or a rectified DC power signal (which may have some ripple components typical of DC signals rectified from AC signals).
- Being an isolation transformer there is no direct electrical connection between the primary and the secondary windings of the isolation transformer. Instead, an isolated power signal having the intermediate frequency is generated across the secondary winding of the isolation transformer via mutual inductance.
- an intermediate frequency which is intentionally chosen to be higher than AC line frequencies (e.g., 50 Hz or 60 Hz) but typically lower than the RF frequency to be blocked, and preferably lower than the lowest of the RF frequencies to be blocked if multiple high frequencies RF signals are involved, renders it possible to reduce the size of the isolation transformer while innovative techniques are employed to reduce the primary- to-secondary capacitivc coupling, as well as to reduce the sccondary-to-corc capacitivc coupling.
- the intermediate frequency of the power signal supplied to the primary winding of the isolation transformer is in the range of about 500 Hz to about 2 MHz, more preferably in the range of about 5 KHz to about 200 CT/LMRX-P188PCT
- KHz KHz
- a preferred embodiment in the range of about 10 KHz to about 50 KHz.
- the selection of the appropriate intermediate frequency is critical since a lower operating frequency tends to result in an undesirably large isolation transformer and a higher frequency tends to enable a reduction in the size of the magnetic components (e.g., the isolation transformer) while the drive circuit and the magnetic core material tend to become less efficient at higher operating frequencies.
- the isolation transformer is specifically designed with reduced dimensions and to operate efficiently at the aforementioned intermediate frequency range while presenting a high impedance to high frequency signals at all RF frequencies of interest.
- the secondary winding is physically spaced apart from the primary winding to reduce capacitive coupling.
- the secondary winding is spaced as far as possible from die primary winding to minimize this capacitive coupling.
- the secondary winding is wound with a large diameter, resulting in an air gap between the secondary winding and the magnetic core, thereby reducing the capacitive coupling between the secondary winding and the core.
- the secondary winding is wound over the primary winding but with a larger diameter, thereby reducing the capacitive coupling between the primary winding and the secondary winding, as well as reducing the capacitive coupling between the secondary winding and the core.
- one or more shields may be interposed between the secondary winding and the primary winding, between the secondary winding and the core, and/or between the primary winding and the core to control the capacitive coupling, such shields being slotted in a fashion known as a Faraday shield in order to minimize the induction of eddy currents in the shield.
- Fig. 2 shows, in accordance with an embodiment of the present invention, relevant portions of an isolation transformer implementation to provide high DC or AC line power to a load that is also coupled to one or more high frequency RF signals.
- the load is a heater for an RF -coupled chuck in a plasma processing chamber although other loads may also benefit from embodiments of the invention.
- a source power signal in the form of AC line voltages and frequencies (e.g., 50 Hz or 60 Hz) is supplied via leads 202 and 204 to a rectifier/filter circuit 206.
- Rectifier circuit 206 which may be implemented by a bridge rectifier and/or may CT/LMRX-P188PCT employ triac, SSR, or thyristor controls, converts the AC line input power signal to a quasi- DC power signal which may be subsequently filtered into smooth DC if desired.
- the AC source power signal on leads 202/204 may be a single phase signal or a 3-phasc signal as desired, and rectifier circuit 206 is correspondingly a single-phase or three-phase rectifier. If a DC power signal is available as input power, then no rectification may be necessary. It should be noticed that the high current drawn from the AC line into the input filter may require the power factor correction circuitry.
- the DC power signal output by rectifier circuit 206 is then supplied to a drive circuit 208, which converts the DC power signal received on leads 210 and 212 to an intermediate signal having an intermediate frequency.
- the intermediate frequency is in the range of about 10 KHz to about I MHz, more preferably in the range of 10 KHz to a few hundred KHz, and in an embodiment in the range of about 10 KHz to about 200 KHz.
- the intermediate frequency is intentionally higher than the AC line frequency of 50-60Hz but preferably lower than the RF frequency to be blocked (which tends to be in the multiple MHz range). Being higher than the AC line frequency, the intermediate frequency renders it possible to use a smaller isolation transformer 220.
- drive circuit 208 is a switch- mode power supply, which pulse-width modulates the received DC power signal to the desired intermediate frequency.
- the dury cycle after pulse- width modulation may vary from slightly above zero to about 50%.
- an appropriate drive circuit 208 may modulate the received DC power signal to an AC sine signal having an intermediate frequency. Reducing the harmonic content in this fashion can prevent interference and noise issues and simplifies any filtering requirements. Alternate power modulation schemes including zero crossing and on/off control may also be implemented cither solo, or in combination.
- the intermediate signal output by drive circuit 208 is then supplied to the primary winding 222 of isolation transformer 220.
- Primary winding 222 is shown wound around one segment of a core 224.
- Core 224 may be formed of manganese zinc or nickel zinc or another suitable high magnetic permeability material (e.g., mu in the 2000 range).
- powdered iron (mu of 10 to 40), core materials commonly known as MPP, Sendust (mu of 50 to 300), NiZn and MnZn fcrritcs (mu of 100 to 5000), etc., may be employed.
- materials having a higher mu may be employed for lower frequency operation and vice versa.
- materials with a mu value between about 200 to about 3000 may be suitable, in an embodiment.
- materials having a CT/LMRX-P 188PCT mu range value between about 10 to about 5000 may be employed.
- materials having a mu range value between about 100 to about 2000 may be employed.
- materials having a mu range value between about 200 to about 1000 may be employed.
- an air gap 230 (the location shown in Fig. 2 is only an example) may be provided in core 224 to prevent saturation and to linearize the magnetic characteristics as well as potentially reduce the temperature dependency of isolation transformer 220. If air gap 230 is present, primary winding 222 is preferably wound to the sides of the air gap 230 instead of over air gap 230 to reduce dissipation in die winding.
- secondary winding 236 is positioned apart from primary winding 222 to reduce the primary-to- secondary capacitivc coupling and to achieve a high degree of isolation, particularly for the higher frequency RF signals.
- secondary winding 236 may be positioned opposite primary winding 222 around core 224 as shown. Although this separation of the windings may result in considerable leakage inductance, appropriate designs can readily accommodate this issue.
- the RF coupling be mostly by stray capacitance providing the core material is a dielectric.
- Ferrite materials are metal oxides with high resistance and dielectric constants typical of other ceramics, say 10- 100, may be employed to achieve capacitance between the primary and secondary sides of a few pico farads.
- certain ferritcs such as the common MnZn materials may have dielectric constants orders of magnitude higher such that secondary insulation such as airgaps on Teflon liners may be required to control stray capacitance.
- the capacitivc coupling is preferably limited to the single-digit picofarad range (such as 1 pF to about 20 pF).
- the choice of the core material and design of the core involves tradeoffs, for while epsilon both real and imaginary typically decreases somewhat with increasing frequency for ferritcs, thus lowering the stray capacitance, the loss tangent still suffers a maximum at some particular frequency and it is desirable that the power transmission be operated well below this frequency in order to avoid excessive core loss.
- the stray capacitance tends to be somewhat independent of frequency, but lowers as frequency is CT/LMRX-PI 88PCT increased such that isolation improves at higher frequencies so the particulars of the RF in use tend to not matter as long as the high frequency RF signal is applied in a common mode (no net flux in the core).
- secondary winding 236 is wound around core 224 with a larger diameter 238 when compared to the manner with which primary winding 222 is wound around core 224.
- the larger diameter 238 helps to reduce the secondary-to-corc capacitive coupling.
- secondary winding 236 is wound over primary winding 222, albeit with a larger diameter to reduce the secondary-to-primary capacitive coupling as well as to reduce the secondary-to-core capacitive coupling. The reduction in these capacitive couplings reduces the frequency dependency and is an important aspect of some embodiments of the present invention.
- primary winding 222 tends to be wound closer to core 224 to help reduce the leakage inductance.
- a small gap and/or an insulating layer may be interposed between primary winding 222 and core 224.
- Secondary winding 236 may have a 1 : 1 ratio with primary winding 222 or may have an n: 1 winding relationship with primary winding 222 to step up or down the voltage. Higher voltage, lower current power signals tend to be more efficient for transmission purposes and may be desired in some cases. In a preferred embodiment, 208 volt AC may be rectified to over 300 volts DC for operational use. Via mutual inductance, an isolated power signal having the intermediate frequency is generated across secondary winding 236. The isolated power signal having the intermediate frequency, which is output by isolation transfonner 220, may then be employed to drive the load, or may be converted to an isolated DC power signal to drive the load. If desired, output filtering may be performed prior to driving the load with the isolated power signal.
- a shield is provided to further reduce the capacitive coupling.
- a shield may be provided between primary winding 222 and CT/LMRX-P188PCT secondary winding 236 to reduce the primary-to-secondary capacitive coupling.
- a shield may alternatively or additionally be provided between secondary winding 236 and core 224 to reduce the sccondary-to-corc capacitive coupling.
- a shield may alternatively or additionally be provided between primary winding 222 and core 224 to reduce the primary- to-corc capacitive coupling.
- the shield may be grounded, in one or more embodiments, to conduct any current developed thereon to ground.
- one or more slits are provided in the shield (e.g., in the toroidal winding direction) to reduce eddy currents and prevent the shield from acting like a shorted turn.
- the presence of the shield has been found to reduce self-resonance (e.g., antenna effect) in the primary and secondary windings, thereby smoothing out the impedance characteristics and contributing to the frequency-independent characteristic of the design.
- filters may be employed to allow the high frequency RF signal (i.e., the RF signal to be blocked) to be presented to isolation transformer 220 as a common mode signal.
- capacitor 245 is coupled to leads 244 and 246 respectively to accomplish the goal of presenting the high frequency RF signal to isolation transformer 220 as a common mode signal.
- Filters of other designs well known to those skilled in the art may also be employed. While there may be stray capacitances (represented by 240 and 242), these stray capacitances may be dominated by capacitor 245 for the purpose of insuring that the output signal RF coupling is common mode signal.
- Capacitor 245 should be appropriately sized (not too large) to avoid resonating at critical frequencies.
- the power can be used to power a passive circuit such as a heater directly, cither as AC at the switching frequency, or rectified into deeply modulated DC or filtered back to smoothed DC. It may also be rectified or controlled at the high side if desired.
- a passive circuit such as a heater directly, cither as AC at the switching frequency, or rectified into deeply modulated DC or filtered back to smoothed DC. It may also be rectified or controlled at the high side if desired.
- power control is applied at the low side (e.g., primary winding 222 and circuitry toward the AC line side of Fig. 2) using for example SSRs as is currently done for heaters, or by PWM (pulse width modulation) or by ON/Off burst modulation of the switching circuit.
- the control scheme may implement open loop, feed forward, or feed back control.
- Feedback can be implemented by monitoring low side power/current draw, or more accurately using a high side electrical sensor of power, voltage and or current or some other sensed variable.
- a temperature sensor may be employed, e.g. a resistance temperature detector, fluoro-optic probe or thermocouple.
- another isolation channel may be provided, e.g. opto-coupler or optic fiber or low current RF filter.
- modulation may be performed on the AC or DC isolated power signal on the high side to enable high-side control.
- each high side device e.g. heater element
- each high side device may employ its own power channel.
- a common power channel which can either be an even larger power isolator (transformer), or by running several lower power channels in parallel.
- the control may be implemented using active circuitry at the high side.
- the control signals corresponding to a set point e.g. temperature or power
- Figs. 3A-3C show, in accordance with embodiments of the invention, some example control schemes.
- three load options are shown and the current may be delivered to the load (see right side of the figure) alternatively (one option at a time) or concurrently (2 or more options simultaneously).
- power factor correction circuitry (not shown) may be employed with one or more of Figs. 3A-3C.
- low-side and high-side e.g., secondary winding 236 and circuitry toward the high frequency RF side of Fig. 2
- control schemes are possible.
- no active control is provided with cither the rectifier/filter circuit (e.g., 306), the driver circuit (e.g., 308) or to the high-side modulation circuit ( 14).
- an appropriately isolated (e.g., using opto-isolation) temperature sensing signal may be provided to a source power signal control circuit to turn on and off the AC source power signal to control the temperature of a chuck.
- a source power signal control circuit may be provided to a source power signal control circuit to turn on and off the AC source power signal to control the temperature of a chuck.
- the thermal mass is fairly high, even simple on/off control of the AC source power signal (as opposed to proportional) has the potential of producing good performance. This is particularly true if the AC source power signal is controlled using a microprocessor that can rapidly cycle the AC source power signal on/off.
- a microprocessor control unit 320 may be employed to control the rectifier/filter circuit (e.g., rectifier/filter circuit 306) to CT/LMRX-P 1 88PCT regulate the amplitude of the DC output signal.
- microprocessor control unit 302 may be employed to change the switching characteristics, the pulse width duration, and/or the operating frequencies of the switch mode power supply and/or other characteristics of driver circuit 308.
- processor/controller unit 320 may be employed to change tap points on the transformer primary, thereby effectively changing the turn ratio of isolation transformer 310.
- a high-side temperature sensor may send isolated sensor signals (e.g., opto-isolatcd or low power filtering) to a processor/controller unit 330, which then issues commands (which may also be isolated using, for example, opto-isolation or low power filtering) to a high-side isolated controller 352 to control the high-side modulation circuit 354.
- isolated sensor signals e.g., opto-isolatcd or low power filtering
- commands which may also be isolated using, for example, opto-isolation or low power filtering
- housekeeping voltages and currents for high-side modulation controller may be supplied using an isolated power signal from the low-side.
- embodiments of the invention substantially obviate the frequency dependency of the prior art filtering approach as well as the difficulties with matching passive filter components inherent in that approach.
- the resonance problem associated with the prior art filtering approach is also substantially eliminated.
- an intcmicdiatc frequency with the isolation transformer, it is possible to substantially shrink the physical size of the isolation transformer.
- the isolation transformer By appropriately designing the isolation transformer to provide a high degree of RF isolation while presenting a high impedance to all high RF frequencies of interest, it is possible to efficiently provide power from an AC source or a DC source to a component or assembly that is also coupled to a high RF signal.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
- Dc-Dc Converters (AREA)
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Abstract
Description
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020127010167A KR101791706B1 (en) | 2009-10-21 | 2010-10-19 | Rf isolation for power circuitry |
| CN201080047804.7A CN102577632B (en) | 2009-10-21 | 2010-10-19 | RF insulation for power circuits |
| JP2012535314A JP5726886B2 (en) | 2009-10-21 | 2010-10-19 | Method and system for providing RF isolation for power circuits |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/603,326 | 2009-10-21 | ||
| US12/603,326 US8755204B2 (en) | 2009-10-21 | 2009-10-21 | RF isolation for power circuitry |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2011049993A2 true WO2011049993A2 (en) | 2011-04-28 |
| WO2011049993A3 WO2011049993A3 (en) | 2011-09-29 |
Family
ID=43879178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2010/053263 Ceased WO2011049993A2 (en) | 2009-10-21 | 2010-10-19 | Rf isolation for power circuitry |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8755204B2 (en) |
| JP (1) | JP5726886B2 (en) |
| KR (1) | KR101791706B1 (en) |
| CN (1) | CN102577632B (en) |
| TW (1) | TWI495249B (en) |
| WO (1) | WO2011049993A2 (en) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2930093A1 (en) * | 2008-04-10 | 2009-10-16 | Somfy Sas | TRANSMITTER TYPE DEVICE AND / OR RECEIVER OF RADIO SIGNALS |
| US20120275195A1 (en) * | 2011-04-28 | 2012-11-01 | Lorenzo Cividino | Low Noise, Highly Isolated Power Supply |
| US9576725B2 (en) * | 2012-12-28 | 2017-02-21 | General Electric Company | Method for reducing interwinding capacitance current in an isolation transformer |
| WO2015034992A1 (en) * | 2013-09-04 | 2015-03-12 | Newton Scientific, Inc. | Transformer with highly resistive core |
| TW201518538A (en) | 2013-11-11 | 2015-05-16 | 應用材料股份有限公司 | Pixelated cooling temperature controlled substrate support assembly |
| US11158526B2 (en) | 2014-02-07 | 2021-10-26 | Applied Materials, Inc. | Temperature controlled substrate support assembly |
| US9472410B2 (en) | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
| US9673816B2 (en) | 2014-11-11 | 2017-06-06 | Halliburton Energy Services, Inc. | Asymmetric gate driver apparatus, methods, and systems |
| US9779974B2 (en) | 2015-06-22 | 2017-10-03 | Lam Research Corporation | System and method for reducing temperature transition in an electrostatic chuck |
| US9864361B2 (en) | 2015-06-22 | 2018-01-09 | Lam Research Corporation | Flexible temperature compensation systems and methods for substrate processing systems |
| US10386821B2 (en) | 2015-06-22 | 2019-08-20 | Lam Research Corporation | Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values |
| US10763142B2 (en) | 2015-06-22 | 2020-09-01 | Lam Research Corporation | System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter |
| US10381248B2 (en) | 2015-06-22 | 2019-08-13 | Lam Research Corporation | Auto-correction of electrostatic chuck temperature non-uniformity |
| US10373794B2 (en) | 2015-10-29 | 2019-08-06 | Lam Research Corporation | Systems and methods for filtering radio frequencies from a signal of a thermocouple and controlling a temperature of an electrode in a plasma chamber |
| US10043636B2 (en) | 2015-12-10 | 2018-08-07 | Lam Research Corporation | Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal |
| US9966231B2 (en) * | 2016-02-29 | 2018-05-08 | Lam Research Corporation | Direct current pulsing plasma systems |
| CN108075473B (en) * | 2016-11-07 | 2019-11-29 | 北京北方华创微电子装备有限公司 | A kind of filter circuit, heater circuit and semiconductor processing equipment |
| EP4017223B1 (en) | 2017-06-27 | 2025-10-15 | Canon Anelva Corporation | Plasma processing apparatus |
| EP3648550B1 (en) * | 2017-06-27 | 2021-06-02 | Canon Anelva Corporation | Plasma treatment device |
| CN114666965B (en) | 2017-06-27 | 2025-08-01 | 佳能安内华股份有限公司 | Plasma processing apparatus |
| PL3648554T3 (en) * | 2017-06-27 | 2021-11-22 | Canon Anelva Corporation | PLASMA PROCESSING DEVICE |
| KR102211454B1 (en) * | 2017-08-31 | 2021-02-04 | 한국전자기술연구원 | Isolated DC-DC converter and driving method thereof |
| US11152679B2 (en) | 2017-09-11 | 2021-10-19 | Antronix Inc. | Power passing directional coupler having a split ferrite element |
| US10460914B2 (en) * | 2017-11-30 | 2019-10-29 | Lam Research Corporation | Ferrite cage RF isolator for power circuitry |
| US10557901B2 (en) * | 2018-02-21 | 2020-02-11 | General Electric Company | Systems and methods for providing gradient power for an MRI system |
| PL3817517T3 (en) | 2018-06-26 | 2024-10-28 | Canon Anelva Corporation | Plasma treatment device, plasma treatment method, program, and memory medium |
| US11177067B2 (en) | 2018-07-25 | 2021-11-16 | Lam Research Corporation | Magnetic shielding for plasma sources |
| TWI692182B (en) | 2018-08-31 | 2020-04-21 | 群光電能科技股份有限公司 | Voltage converter and voltage conversion method for reducing common mode noise |
| KR102791775B1 (en) | 2019-05-07 | 2025-04-03 | 램 리써치 코포레이션 | Closed-loop multiple output radio frequency (rf) matching |
| CN118866641A (en) | 2019-07-31 | 2024-10-29 | 朗姆研究公司 | RF power generator with multiple output ports |
| JP7634528B2 (en) * | 2019-10-01 | 2025-02-21 | ラム リサーチ コーポレーション | Radio Frequency Distribution Circuit Including a Transformer and/or a Transformer-Coupled Combiner - Patent application |
| WO2021113387A1 (en) | 2019-12-02 | 2021-06-10 | Lam Research Corporation | Impedance transformation in radio-frequency-assisted plasma generation |
| US11994542B2 (en) | 2020-03-27 | 2024-05-28 | Lam Research Corporation | RF signal parameter measurement in an integrated circuit fabrication chamber |
| WO2021211269A1 (en) * | 2020-04-14 | 2021-10-21 | Lam Research Corporation | Transformer isolator having rf shield structure for effective magnetic power transfer |
| KR20230021739A (en) | 2020-06-12 | 2023-02-14 | 램 리써치 코포레이션 | Control of Plasma Formation by RF Coupling Structures |
| US11955941B2 (en) | 2020-07-24 | 2024-04-09 | Raytheon Company | Radio frequency filtered interface |
| BR112023005116A2 (en) | 2020-10-13 | 2023-05-02 | Ericsson Telefon Ab L M | RECEIVER CIRCUIT AND COMMUNICATION DEVICE |
| CN116979951A (en) * | 2023-08-18 | 2023-10-31 | 德氪微电子(深圳)有限公司 | A millimeter wave isolation relay |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5226421A (en) * | 1975-08-22 | 1977-02-28 | Sony Corp | Transformer |
| US4510476A (en) * | 1983-06-21 | 1985-04-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High voltage isolation transformer |
| JPS6054315U (en) * | 1983-09-21 | 1985-04-16 | オンキヨー株式会社 | AC electrical equipment for audio |
| US4871421A (en) | 1988-09-15 | 1989-10-03 | Lam Research Corporation | Split-phase driver for plasma etch system |
| EP0392834B1 (en) * | 1989-04-14 | 1995-02-15 | TLG plc | Ballast circuits for gas discharge lamps |
| JPH04355906A (en) * | 1991-02-20 | 1992-12-09 | Yokogawa Electric Corp | Choke coil and noise-reducing device for switching power supply |
| JP2777687B2 (en) | 1992-11-16 | 1998-07-23 | 旭精機工業株式会社 | Pre-processing method and pre-processing device for wire rod |
| JPH0732078B2 (en) * | 1993-01-14 | 1995-04-10 | 株式会社アドテック | High frequency plasma power supply and impedance matching device |
| JP3162245B2 (en) * | 1994-04-20 | 2001-04-25 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
| JPH0917657A (en) * | 1995-06-29 | 1997-01-17 | Canon Inc | Transformers and switching power supplies |
| JP3162639B2 (en) * | 1996-11-22 | 2001-05-08 | 株式会社三社電機製作所 | Power supply |
| US6429762B1 (en) * | 1997-08-18 | 2002-08-06 | Compaq Information Technologies Group, L.P. | Data communication isolation transformer with improved common-mode attenuation |
| DE19836401A1 (en) * | 1997-09-19 | 2000-02-17 | Salcomp Oy Salo | Device for charging accumulators |
| US6395128B2 (en) | 1998-02-19 | 2002-05-28 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition |
| US6594157B2 (en) * | 2000-03-21 | 2003-07-15 | Alps Electric Co., Ltd. | Low-loss magnetic powder core, and switching power supply, active filter, filter, and amplifying device using the same |
| US6922324B1 (en) * | 2000-07-10 | 2005-07-26 | Christopher M. Horwitz | Remote powering of electrostatic chucks |
| US20030000924A1 (en) * | 2001-06-29 | 2003-01-02 | Tokyo Electron Limited | Apparatus and method of gas injection sequencing |
| DE10158794B4 (en) | 2001-11-30 | 2008-05-29 | Friwo Gerätebau Gmbh | Inductive contactless power transformer |
| JP3778131B2 (en) * | 2002-05-28 | 2006-05-24 | 株式会社日立製作所 | Power conversion system and filter used therefor |
| JP4275386B2 (en) * | 2002-11-12 | 2009-06-10 | 株式会社三社電機製作所 | Power supply |
| JP2005303073A (en) * | 2004-04-13 | 2005-10-27 | Sumida Corporation | High voltage transformer |
| US7276135B2 (en) * | 2004-05-28 | 2007-10-02 | Lam Research Corporation | Vacuum plasma processor including control in response to DC bias voltage |
| JP2006049786A (en) * | 2004-08-06 | 2006-02-16 | Pulse Electronic Engineering Co Ltd | High frequency high voltage transformer |
| US20060132045A1 (en) | 2004-12-17 | 2006-06-22 | Baarman David W | Heating system and heater |
| KR100785864B1 (en) | 2005-02-24 | 2007-12-21 | 이엔테크놀로지 주식회사 | Ignition circuit for plasma power supply |
| KR100725722B1 (en) * | 2005-06-29 | 2007-06-08 | 피에스케이 주식회사 | Semiconductor fabrication Apparatus |
| US7667411B2 (en) * | 2005-11-24 | 2010-02-23 | Samsung Electro-Mechanics Co., Ltd. | Backlight assembly having voltage boosting section with electrically isolated primary side and secondary side |
| JP4867390B2 (en) * | 2006-02-22 | 2012-02-01 | 株式会社安川電機 | Consumable electrode arc welding apparatus and method |
| NZ547604A (en) | 2006-05-30 | 2008-09-26 | John Talbot Boys | Inductive power transfer system pick-up circuit |
| JP2008068260A (en) * | 2006-09-12 | 2008-03-27 | Sansha Electric Mfg Co Ltd | AC TIG welding machine |
| KR101384583B1 (en) | 2007-08-02 | 2014-04-14 | 최대규 | Inductively coupled plasma reactor having multi rf antenna |
| US8194384B2 (en) * | 2008-07-23 | 2012-06-05 | Tokyo Electron Limited | High temperature electrostatic chuck and method of using |
| US7825537B2 (en) | 2008-11-14 | 2010-11-02 | Harris Corporation | Inductive power transfer system and method |
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- 2009-10-21 US US12/603,326 patent/US8755204B2/en not_active Ceased
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| CN102577632B (en) | 2014-12-03 |
| KR101791706B1 (en) | 2017-10-30 |
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| JP2013509151A (en) | 2013-03-07 |
| WO2011049993A3 (en) | 2011-09-29 |
| JP5726886B2 (en) | 2015-06-03 |
| KR20120087925A (en) | 2012-08-07 |
| CN102577632A (en) | 2012-07-11 |
| USRE47276E1 (en) | 2019-03-05 |
| TWI495249B (en) | 2015-08-01 |
| TW201145795A (en) | 2011-12-16 |
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