WO2011048866A1 - 非晶質半導体膜用オリゴメチルゲルマン化合物とこれを用いる成膜ガス - Google Patents

非晶質半導体膜用オリゴメチルゲルマン化合物とこれを用いる成膜ガス Download PDF

Info

Publication number
WO2011048866A1
WO2011048866A1 PCT/JP2010/063546 JP2010063546W WO2011048866A1 WO 2011048866 A1 WO2011048866 A1 WO 2011048866A1 JP 2010063546 W JP2010063546 W JP 2010063546W WO 2011048866 A1 WO2011048866 A1 WO 2011048866A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
gas
amorphous semiconductor
photoelectric conversion
photovoltaic device
Prior art date
Application number
PCT/JP2010/063546
Other languages
English (en)
French (fr)
Inventor
利久 井手
竜也 入江
健二 田仲
Original Assignee
セントラル硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by セントラル硝子株式会社 filed Critical セントラル硝子株式会社
Publication of WO2011048866A1 publication Critical patent/WO2011048866A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H01L31/03765—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table including AIVBIV compounds or alloys, e.g. SiGe, SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a compound used for forming a pin junction amorphous semiconductor film in a manufacturing process of a photoelectric conversion layer of a photovoltaic device such as a solar cell.
  • a solar cell using an amorphous semiconductor has a transparent electrode such as ITO or SnO 2 on a glass substrate, a p-type, i-type, or n-type amorphous silicon (a-Si) film, A back electrode such as Ag and Au is laminated in order.
  • a-Si film is produced by a continuous separation method in which p-type, i-type, and n-type layers are sequentially formed in separate plasma CVD apparatuses (for example, Patent Document 1). Yes.
  • germanium semiconductor is a semiconductor material that was used when the transistor was invented and is still used for applications such as photodetectors and diodes. Semiconductor became mainstream. However, in recent years, a SiGe semiconductor combining silicon and germanium has been developed as the amorphous semiconductor, and has been found to exhibit excellent semiconductor characteristics.
  • the optical band gap is controlled over a wide range from 1.0 eV to 1.8 eV by changing the composition of silicon and germanium in the film.
  • Patent Document 2 Therefore, light absorption in a wide range of wavelengths can be performed by laminating with a conventional amorphous silicon film (optical band gap 1.7 to 1.8 eV). Therefore, a highly efficient thin film solar cell can be formed.
  • each of these layers can be formed thin. This makes it possible to form a thin film solar cell having durability against photodegradation.
  • this amorphous hydrogenated silicon germanium alloy film is expected as an amorphous solar cell material for forming a thin film solar cell with high efficiency and high photostability.
  • efforts have been made to improve the quality of amorphous hydrogenated silicon germanium alloy films.
  • germanium (GeH 4 ) is used as the germanium raw material gas.
  • GeH 4 is a gas having a boiling point of ⁇ 88.4 ° C.
  • high-pressure filling is necessary to transport a large amount.
  • handling with high concentration of GeH 4 under high pressure causes a problem in safety, and it is necessary to dilute and fill. Therefore, there is a problem that mass transportation is difficult and transportation cost is increased.
  • GeH 4 has extremely low chemical stability such as pyrophoricity and decomposition and explosiveness, so that strict safety measures are indispensable for facilities and handling.
  • the present invention is a compound used for an amorphous semiconductor film of a pin junction formed as a photoelectric conversion layer of a photovoltaic device.
  • it is a chemical safe alternative to GeH 4 gas and is easily transported in large quantities.
  • the object is to provide membrane raw materials.
  • an oligomethylgermane compound is a chemically stable and easy-to-transport film source that replaces GeH 4 gas. As a result, the present invention has been achieved.
  • the present invention provides an oligomethylgermane compound represented by the general formula (1) used for a pin junction amorphous semiconductor film formed as a photoelectric conversion layer of a photovoltaic device.
  • n represents an integer of 1 to 4.
  • the present invention also provides a film forming gas for forming a pin junction amorphous semiconductor film as a photoelectric conversion layer of a photovoltaic device, which contains the oligomethylgermane compound represented by the general formula (1). To do.
  • the film forming gas is suitably used as a film forming gas for forming an amorphous hydrogenated silicon germanium alloy film that becomes an i-type semiconductor.
  • the content of the oligomethylgermane compound represented by the general formula (1) in the film forming gas is preferably in the range of 0.01 to 10% by volume.
  • the oligomethylgermane compound of the present invention is represented by the general formula (1) and is used to form a pin junction amorphous semiconductor film as a photoelectric conversion layer of a photovoltaic device. [Wherein n represents an integer of 2 to 4. ]
  • oligomethylgermane compound (1) examples include tetramethylgermane (Ge (CH 3 ) 4 ), trimethylgermane. ((CH 3 ) 3 GeH), dimethyl germane ((CH 3 ) 2 GeH 2 ), and methyl germane (CH 3 GeH 3 ).
  • CH 3 GeH 3 is a gaseous compound having a boiling point of ⁇ 35 ° C.
  • (CH 3 ) 2 GeH 2 is a gaseous compound having a boiling point of 6.5 ° C.
  • (CH 3 ) 3 GeH has a boiling point of 26 ° C.
  • Ge (CH 3 ) 4 has a boiling point of 44 ° C. For this reason, (CH 3 ) 3 GeH and Ge (CH 3 ) 4 which are liquids at room temperature (25 ° C.) or higher are particularly preferable compounds in terms of safety.
  • the method is not limited to the method for obtaining the oligomethylgermane compound (1).
  • Ge (CH 3 ) 4 is, for example, Bull. Chem. Soc. Jap. 1985, 58, 3277.
  • (CH 3 ) 3 GeH, (CH 3 ) 2 GeH 2 , or CH 3 GeH 3 can be obtained by reacting GeCl 4 and methyl Grignard reagent in butyl ether as described in, for example, Inorg. Chem. 1963, 2, 375.
  • (CH 3 ) 3 GeBr, (CH 3 ) 2 GeBr 2 , or CH 3 GeBr 3 can be obtained by a known method such as a method of reducing with NaBH 4 in an aqueous solvent.
  • Oligomethylgermane compound (1) can be used in a general method for forming a pin-junction amorphous semiconductor film such as plasma CVD, thermal CVD, and photo-CVD.
  • Examples of the amorphous semiconductor film formed using the oligomethylgermane compound (1) include an amorphous hydrogenated silicon germanium alloy film, an amorphous germanium film, and a GeO 2 film.
  • Examples of the amorphous hydrogenated silicon germanium alloy film include a-SiGe and a-SiGeC.
  • Examples of the Si source include monosilane (SiH 4 ).
  • Examples of the a-SiGeC C source include ethane and propane. A lower alkane or the like is used. At this time, monosilane is supplied into the film forming apparatus in a diluted state, and hydrogen, helium, nitrogen, or the like is used as a carrier gas.
  • the oligomethyl germane compound (1) is used as a germanium raw material when forming an amorphous hydrogenated silicon germanium alloy film.
  • the oligomethyl germane compound (1) is used as a germanium raw material, it is preferable to use a film forming gas in which the oligomethyl germane compound (1) is mixed within a range of 0.01 to 10% by volume. If it is less than 0.01% by volume, the germanium concentration is too low to improve performance such as mobility as a semiconductor, and if it exceeds 10% by volume, it becomes easy to form Ge—Ge bonds with low binding energy in the film. There is a possibility that film quality and durability may be lowered.
  • the amorphous semiconductor film formed using the oligomethylgermane compound (1) can be used as an i-type layer, but by mixing with a commonly used doping gas to form a p-type layer, It can also be used as an n-type layer.
  • Example 1 A filter paper was placed on the magnetic cup, and 0.5 mL of Gelest (Ge 3 CH 4 ) 4 made by Gelest was dropped with a syringe, and the state was observed. Even after 5 minutes, no evidence of burning or scorching of the filter paper was observed. This experiment was repeated three times with similar results. From this, it was confirmed that there was no spontaneous ignition.
  • Example 2 A filter paper was placed on a magnetic cup, 0.5 mL of Gelest (CH 3 ) 3 GeH was dropped with a syringe, and the state was observed. Even after 5 minutes, no evidence of burning or scorching of the filter paper was observed. This experiment was repeated three times with similar results. From this, it was confirmed that there was no spontaneous ignition.
  • Example 3 An amorphous hydrogenated silicon germanium alloy film was formed by the following procedure using the plasma CVD film forming apparatus shown in FIG.
  • the film forming apparatus includes a vacuum chamber 1, an upper discharge electrode 2 a, a lower discharge electrode 2 b incorporating an electrode heater 13 having a temperature control means, a high-frequency power source 4, an exhaust system 5, , H 2 cylinder 6, SiH 4 cylinder 7, Ge raw material cylinder 8, mass flow controllers 9 a, 9 b and 9 c, pipe 10, heater 11, and coil heater 12.
  • the upper discharge electrode 2a and the lower discharge electrode 2b were disposed in the vacuum chamber 1 so as to face each other, and the glass substrate 3 to be formed was placed on the lower discharge electrode 2b.
  • a high frequency power supply 4 and an exhaust system 5 were connected to the vacuum chamber 1.
  • the vacuum chamber 1 was connected to the H 2 cylinder 6, the SiH 4 cylinder 7 and the Ge raw material cylinder 8 through the pipe 10.
  • the Ge raw material cylinder 8 was filled with Ge (CH 3 ) 4 manufactured by Gelest.
  • mass flow controllers 9a, 9b, and 9c were installed in order to control the gas flow rate of H 2 , the gas flow rate of SiH 4 , and the gas amount of Ge (CH 3 ) 4 .
  • a heater 11 is installed around the Ge raw material cylinder 8 to heat and vaporize Ge (CH 3 ) 4
  • a coil heater 12 is wound around the pipe 10 to heat and maintain the inside. It was.
  • the glass substrate 3 was placed on the lower discharge electrode 2 b in the vacuum chamber 1 and heated to 200 ° C. by the electrode heater 13.
  • the inside of the vacuum chamber 1 was maintained in a vacuum state of about 1 Pa by the exhaust system 5, and a high frequency voltage of 13.56 MHz was applied with an output of 30 W by the high frequency power source 4.
  • Ge (CH 3 ) 4 in the Ge raw material cylinder 8 was heated to 50 ° C. by the heater 11, and the inside of the pipe 10 was heated and maintained at about 50 ° C. by energizing the coil heater 12.
  • Ge (CH 3 ) 4 is a liquid having a vapor pressure of about 380 torr at room temperature, so the pressure inside the cylinder at 50 ° C. was about 0.12 MPa. .
  • SiH 4 gas was introduced into the vacuum chamber 1 from the SiH 4 cylinder 7 through the pipe 10. Further, Ge (CH 3 ) 4 in the heated Ge raw material cylinder 8 was introduced into the vacuum chamber 1 through the pipe 10.
  • the flow rates of SiH 4 gas and Ge (CH 3 ) 4 gas are 40 sccm for the total gas flow rate using the mass flow controllers 9b and 9c, and the gas mixing ratio of Ge (CH 3 ) 4 gas in the introduced total gas is The volume was adjusted to 1% by volume.
  • These mixed gases were simultaneously diluted from the H 2 cylinder 6 with hydrogen gas adjusted to a flow rate of 360 sccm by the mass flow controller 9a and introduced into the chamber. Thereby, the film was formed at a deposition rate of about 0.8 nm / s.
  • the inside of the vacuum chamber 1 during film formation was maintained at a pressure of 10 Pa.
  • an amorphous hydrogenated silicon germanium alloy film having a thickness of 1000 mm was formed on the glass substrate 3, and dark conductivity measurement was performed.
  • the dark conductivity of the obtained film was 1.2 ⁇ 10 ⁇ 8 S / cm.
  • Example 4 An amorphous hydrogenated silicon germanium alloy film having a thickness of 1000 mm was formed on the glass substrate 3 in the same manner as in Example 3 except that the Ge (CH 3 ) 4 gas mixing ratio was 3% by volume. When dark conductivity measurement was performed on the obtained film, the dark conductivity was 2.5 ⁇ 10 ⁇ 8 S / cm.
  • Example 5 An amorphous hydrogenated silicon germanium alloy film having a thickness of 1000 mm was formed on the glass substrate 3 in the same manner as in Example 3 except that the Ge (CH 3 ) 4 gas mixing ratio was 5% by volume. When dark conductivity measurement was performed on the obtained film, the dark conductivity was 1.8 ⁇ 10 ⁇ 8 S / cm.
  • Example 6 An amorphous hydrogenated silicon germanium alloy film having a thickness of 1000 mm was formed on the glass substrate 3 in the same manner as in Example 3 except that the Ge (CH 3 ) 4 gas mixing ratio was 8% by volume. When dark conductivity measurement was performed on the obtained film, the dark conductivity was 1.0 ⁇ 10 ⁇ 8 S / cm.
  • Example 7 Example 3 except that Ge (CH 3 ) 4 was replaced with (CH 3 ) 3 GeH manufactured by STREM, the gas mixing ratio was 0.85% by volume, and the temperatures of the heater 10 and the heater 11 were set to 35 ° C.
  • an amorphous hydrogenated silicon germanium alloy film having a thickness of 1000 mm was formed on the glass substrate 3.
  • the dark conductivity was 1.0 ⁇ 10 ⁇ 8 S / cm.
  • Example 8 Ge (CH 3 ) 4 was added to Inorg. Chem. 1963, 2, 375. Instead of (CH 3 ) 2 GeH 2 obtained using the method described in 1 ), the gas mixing rate was 0.7% by volume, and the same procedure as in Example 3 was performed except that the heater 10 and the heater 11 were removed. Then, an amorphous hydrogenated silicon germanium alloy film having a thickness of 1000 mm was formed on the glass substrate 3. When dark conductivity measurement was performed on the obtained film, the dark conductivity was 1.1 ⁇ 10 ⁇ 8 S / cm.
  • Example 9 Ge (CH 3 ) 4 was added to Inorg. Chem. 1963, 2, 375. In the same manner as in Example 3 except that the gas mixing ratio was 0.6% by volume and the heater 10 and the heater 11 were removed, instead of CH 3 GeH 3 obtained using the method described in 1). An amorphous hydrogenated silicon germanium alloy film having a thickness of 1000 mm was formed on the substrate 3. When dark conductivity measurement was performed on the obtained film, the dark conductivity was 1.2 ⁇ 10 ⁇ 8 S / cm.
  • Example 10 The photovoltaic device shown in FIG. 2 was created by the following procedure. First, a transparent electrode 22 made of ITO and a p-type layer 23 made of a B (boron) -doped a-Si film constituting a first photovoltaic element are formed on a glass substrate 21 by plasma CVD. Were sequentially formed on the transparent electrode 22. Subsequently, an i-type layer 24 made of an amorphous hydrogenated silicon germanium alloy film having a thickness of 1000 mm was formed on the p-type layer 23 in the same manner as in Example 3.
  • an n-type layer 25 made of P (phosphorus) -doped a-Si having a thickness of 100 mm was formed on the i-type layer 24 by plasma CVD.
  • a metal electrode 26 made of Ag metal was laminated on the n-type layer 25 to complete the photovoltaic device.
  • the resulting photovoltaic device was irradiated with simulated sunlight according to AM (air mass) 1.5G reference sunlight spectrum generated using a 300 W solar simulator made by Tokyo Instruments at an intensity of 100 mW / cm 2.
  • AM air mass
  • the short-circuit current density was 18 mA / cm 2
  • the open circuit voltage was 0.70 V
  • the fill factor was 0.75
  • the photoelectric conversion efficiency was 9.45%, which is the same performance as when using an existing monogerman gas. showed that.
  • Example 11 A photovoltaic device was produced in the same manner as in Example 10 except that an amorphous hydrogenated silicon germanium alloy film formed by the same method as in Example 4 was used as the i-type layer 25.
  • the resulting photovoltaic device was irradiated with simulated sunlight according to AM (air mass) 1.5G reference sunlight spectrum generated using a 300 W solar simulator made by Tokyo Instruments at an intensity of 100 W / cm 2.
  • AM air mass
  • the short-circuit current density was 19.5 mA / cm 2
  • the open-circuit voltage was 0.67 V
  • the fill factor was 0.71
  • the photoelectric conversion efficiency was 9.28%, which is the same as when using an existing monogerman gas. Showed the performance.
  • Example 12 A photovoltaic device was produced in the same manner as in Example 10 except that an amorphous hydrogenated silicon germanium alloy film formed by the same method as in Example 5 was used as the i-type layer 25.
  • the resulting photovoltaic device was irradiated with simulated sunlight according to AM (air mass) 1.5G reference sunlight spectrum generated using a 300 W solar simulator made by Tokyo Instruments at an intensity of 100 W / cm 2.
  • AM air mass
  • the short-circuit current density was 20.3 mA / cm 2
  • the open-circuit voltage was 0.65 V
  • the fill factor was 0.68
  • the photoelectric conversion efficiency was 8.97%, which is the same as when using an existing monogerman gas. Showed the performance.
  • Example 13 A photovoltaic device was produced in the same manner as in Example 10 except that an amorphous hydrogenated silicon germanium alloy film formed by the same method as in Example 6 was used as the i-type layer 25.
  • the resulting photovoltaic device was irradiated with simulated sunlight according to AM (air mass) 1.5G reference sunlight spectrum generated using a 300 W solar simulator made by Tokyo Instruments at an intensity of 100 W / cm 2.
  • AM air mass
  • the short-circuit current density was 21.5 mA / cm 2
  • the open-circuit voltage was 0.62 V
  • the fill factor was 0.67
  • the photoelectric conversion efficiency was 8.93%, which was the same as when using an existing monogerman gas. Showed the performance.
  • Example 14 A photovoltaic device was produced in the same manner as in Example 10 except that an amorphous hydrogenated silicon germanium alloy film formed by the same method as in Example 7 was used as the i-type layer 25.
  • the resulting photovoltaic device was irradiated with simulated sunlight according to AM (air mass) 1.5G reference sunlight spectrum generated using a 300 W solar simulator made by Tokyo Instruments at an intensity of 100 W / cm 2.
  • AM air mass
  • the short-circuit current density was 18.7 mA / cm 2
  • the open-circuit voltage was 0.71 V
  • the fill factor was 0.73
  • the photoelectric conversion efficiency was 9.69%, which is the same as when using an existing monogerman gas. Showed the performance.
  • Example 15 A photovoltaic device was produced in the same manner as in Example 10 except that an amorphous hydrogenated silicon germanium alloy film formed by the same method as in Example 8 was used as the i-type layer 25.
  • the resulting photovoltaic device was irradiated with simulated sunlight according to AM (air mass) 1.5G reference sunlight spectrum generated using a 300 W solar simulator made by Tokyo Instruments at an intensity of 100 W / cm 2.
  • AM air mass
  • the short-circuit current density was 18.5 mA / cm 2
  • the open-circuit voltage was 0.70 V
  • the fill factor was 0.74
  • the photoelectric conversion efficiency was 9.58%, which is the same as when using an existing monogerman gas. Showed the performance.
  • Example 16 A photovoltaic device was produced in the same manner as in Example 10 except that an amorphous hydrogenated silicon germanium alloy film formed by the same method as in Example 9 was used as the i-type layer 25.
  • the resulting photovoltaic device was irradiated with simulated sunlight according to AM (air mass) 1.5G reference sunlight spectrum generated using a 300 W solar simulator made by Tokyo Instruments at an intensity of 100 W / cm 2.
  • AM air mass
  • the short-circuit current density was 18.1 mA / cm 2
  • the open circuit voltage was 0.72 V
  • the fill factor was 0.73
  • the photoelectric conversion efficiency was 9.51%, which is the same as when using an existing monogerman gas. Showed the performance.
  • the plasma CVD method is used as the film forming method.
  • the same effect can be obtained by using a known photo-CVD method or micro-CVD method.
  • the oligomethylgermane compound of the present invention a compound used for an amorphous semiconductor film of a pin junction formed as a photoelectric conversion layer of a photovoltaic device, is chemically stable and easily transported in large quantities. It can be said that it is useful as an alternative gas for germane (GeH 4 ), which is a conventional germanium source gas.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　本発明は、光起電力装置の光電変換層としてｐｉｎ接合の非晶質半導体膜を成膜する際に用いられる、一般式（１）で表されるオリゴメチルゲルマン化合物を提供する。（ＣＨ３）ｎＧｅＨ４－ｎ　（１）［式中、ｎは１～４のいずれか一つの整数を表す。］一般式（１）のオリゴメチルゲルマン化合物は、化学的に安全で、かつ大量輸送しやすい成膜原料として有用である。

Description

非晶質半導体膜用オリゴメチルゲルマン化合物とこれを用いる成膜ガス
　本発明は、太陽電池などの光起電力装置の光電変換層の製造プロセスにおいて、ｐｉｎ接合の非晶質半導体膜の成膜に用いる化合物に関する。
　近年、クリーンなエネルギーとして、太陽光発電が注目されており、その中でも特に非晶質半導体を用いた太陽電池はコスト面において他の種類の太陽電池よりも有望であり、積極的な研究開発が進められている。
　一般的に、非晶質半導体を用いる太陽電池はガラス基板上の上に、ＩＴＯ、ＳｎＯ2、などの透明電極、ｐ型、ｉ型、ｎ型の非晶質シリコン（ａ－Ｓｉ）膜、Ａｇ、Ａｕなどの裏面電極を順に積層形成して構成されている。例えば、ａ－Ｓｉ膜は、ｐ型、ｉ型、ｎ型の各層を別々のプラズマＣＶＤ装置内で順次形成する、連続分離式にて作製されること（例えば、特許文献１）が知られている。
　ところで、ゲルマニウム半導体はトランジスタが発明されたときに使われていた半導体材料であり、現在でも光検出器やダイオードなどの用途に使用されているが、工業的な処理のしやすさから、シリコンが半導体の主流となった。しかし近年、上記非晶質半導体としてシリコンとゲルマニウムを組み合わせたＳｉＧｅ半導体が開発され、優れた半導体特性を示すことがわかってきた。
　特に水素を含む非晶質水素化シリコンゲルマニウム合金膜は、膜中のシリコン及びゲルマニウムの組成を変化させることにより、光学バンドギャップを１．０ｅＶから１．８ｅＶまでの広い範囲に渡って制御することができる（例えば、特許文献２）。そのため、従来の非晶質シリコン膜（光学バンドギャップ１．７～１．８ｅＶ）と積層させることにより、幅広い波長での光吸収を行うことができる。従って、高効率の薄膜太陽電池を形成することが可能となる。
　また、２層以上の吸収波長域の異なる半導体膜を積層して構成することにより、それらの各層を薄く形成することができる。このことにより、光劣化に対する耐久性をもつ薄膜太陽電池の形成が行えるようになる。
　以上のことから、この非晶質水素化シリコンゲルマニウム合金膜は、高効率でかつ光安定性の高い薄膜太陽電池を形成するための非晶質太陽電池材料として期待されている。そこで、非晶質水素化シリコンゲルマニウム合金膜の品質向上のための努力がなされてきた。
特開昭６０－３１０８２号公報 特開平０６－２８３７４０号公報
　一般的に、プラズマＣＶＤにより非晶質水素化シリコンゲルマニウム合金膜を得るために、シリコン及びゲルマニウム原料となるガスならびに水素ガスを使用するが、このゲルマニウム原料ガスとして、ゲルマン（ＧｅＨ4）を用いる。しかし、ＧｅＨ4は沸点が－８８．４℃の気体であるため、大量に輸送をするためには高圧充填を行う必要がある。また、化学的に不安定であるため高濃度のＧｅＨ4を高圧充填して扱うことは安全性に問題が生じ、希釈して充填する必要がある。したがって、大量輸送が難しく、輸送コストが大きくなるという問題がある。このため、光起電力装置の光電変換層の製造プロセスのように大量のガス供給が必要なプロセスには不利である。また、ＧｅＨ4は自然発火性、分解爆発性など化学的安定性が極めて低いことから、設備上および取扱い上厳重な安全対策が必要不可欠となっている。
　本発明は、光起電力装置の光電変換層として成膜されるｐｉｎ接合の非晶質半導体膜に用いられる化合物で、特に、ＧｅＨ4ガスに代わる化学的に安全で、かつ大量輸送しやすい成膜原料を提供することを目的としている。
　このような状況に鑑み、本発明者らは、上記課題を解決すべく鋭意検討した結果、オリゴメチルゲルマン化合物が、ＧｅＨ4ガスに代わる化学的に安定で、かつ大量輸送しやすい成膜原料となることを見出し、本発明に至った。
　すなわち本発明は、光起電力装置の光電変換層として成膜されるｐｉｎ接合の非晶質半導体膜に用いられる、一般式（１）で表されるオリゴメチルゲルマン化合物を提供するものである。
Figure JPOXMLDOC01-appb-C000002
 ［式中、ｎは１～４のいずれか一つの整数を表す。］
　また、本発明は、上記一般式（１）で表わされるオリゴメチルゲルマン化合物を含む、光起電力装置の光電変換層としてｐｉｎ接合の非晶質半導体膜を成膜するための成膜ガスを提供するものである。
　上記成膜ガスは、ｉ型半導体となる非晶質水素化シリコンゲルマニウム合金膜を形成するための成膜ガスとして好適に用いられる。この場合、上記一般式（１）で表されるオリゴメチルゲルマン化合物の成膜ガス中の含有量は０．０１～１０体積％の範囲内であることが好ましい。
実施例に用いたプラズマＣＶＤの成膜装置の概略図である。 実施例で作成した光起電力装置の概略図である。
　以下に本発明を詳細に説明する。
　本発明のオリゴメチルゲルマン化合物は、一般式（１）で表され、光起電力装置の光電変換層としてｐｉｎ接合の非晶質半導体膜を成膜するために用いられる。
Figure JPOXMLDOC01-appb-C000003
 ［式中、ｎは２～４のいずれか一つの整数を表す。］
　一般式（１）で表されるオリゴメチルゲルマン化合物（以下、単に「オリゴメチルゲルマン化合物（１）」とも称する。）の具体例としては、テトラメチルゲルマン（Ｇｅ（ＣＨ3）4）、トリメチルゲルマン（（ＣＨ3）3ＧｅＨ）、ジメチルゲルマン（（ＣＨ3）2ＧｅＨ2）、メチルゲルマン（ＣＨ3ＧｅＨ3）が挙げられる。この中で、ＣＨ3ＧｅＨ3は沸点－３５℃のガス状化合物であり、（ＣＨ3）2ＧｅＨ2は沸点６．５℃のガス状化合物であり、（ＣＨ3）3ＧｅＨは沸点２６℃、Ｇｅ（ＣＨ3）4は沸点４４℃である。このため室温（２５℃）以上の温度で液体である（ＣＨ3）3ＧｅＨ、Ｇｅ（ＣＨ3）4が、安全面で特に好ましい化合物である。
　オリゴメチルゲルマン化合物（１）を得る方法に限定されない。オリゴメチルゲルマン化合物（１）のうち、Ｇｅ（ＣＨ3）4は、例えばＢｕｌｌ．Ｃｈｅｍ．Ｓｏｃ．Ｊａｐ．１９８５，５８，３２７７．に記載されるようにＧｅＣｌ4とメチルグリニャール試薬をブチルエーテル中で反応させる方法で、（ＣＨ3）3ＧｅＨ、（ＣＨ3）2ＧｅＨ2、或いはＣＨ3ＧｅＨ3は、例えばＩｎｏｒｇ．Ｃｈｅｍ．１９６３，２，３７５．に記載されるように(ＣＨ3)3ＧｅＢｒ、(ＣＨ3)2ＧｅＢｒ2、或いはＣＨ3ＧｅＢｒ3を水溶媒中においてＮａＢＨ4で還元する方法など、公知の方法で得ることができる。
　オリゴメチルゲルマン化合物（１）は、プラズマＣＶＤ、熱ＣＶＤ、光ＣＶＤなどｐｉｎ接合の非晶質半導体膜を成膜する一般的な方法に用いることができる。
　オリゴメチルゲルマン化合物（１）を用いて成膜される非晶質半導体膜としては、非晶質水素化シリコンゲルマニウム合金膜、非晶質ゲルマニウム膜、ＧｅＯ2膜、などがある。非晶質水素化シリコンゲルマニウム合金膜としては、ａ－ＳｉＧｅ、ａ－ＳｉＧｅＣなどが挙げられ、Ｓｉ源としては、モノシラン（ＳｉＨ4）など、ａ－ＳｉＧｅＣのＣ源としては、エタン、プロパンなどの低級アルカンなどが用いられる。またこの際、モノシランは希釈された状態で成膜装置内に供給され、キャリアガスとして水素、ヘリウム、窒素などが用いられる。
　特に、オリゴメチルゲルマン化合物（１）は、非晶質水素化シリコンゲルマニウム合金膜の成膜時のゲルマニウム原料として用いることが有効である。オリゴメチルゲルマン化合物（１）をゲルマニウム原料として用いる場合、オリゴメチルゲルマン化合物（１）を０．０１～１０体積％の範囲内で混合させた成膜ガスを用いることが好ましい。０．０１体積％未満ではゲルマニウム濃度が低濃度すぎて半導体として移動度等の性能向上が見込めず、１０体積％超では、膜中に結合エネルギーの低いＧｅ－Ｇｅ結合を形成しやすくなるため、膜質の低下ならびに耐久性の低下をもたらす虞がある。
　オリゴメチルゲルマン化合物（１）を用いて成形される非晶質半導体膜はｉ型層として用いることができるが、一般的に用いられるドーピングガスと混合して成膜することにより、ｐ型層、ｎ型層として用いることも可能である。
　以下、実施例を挙げ、本発明をより具体的に詳細に説明するが、本発明は以下の実施例に限定されるものではない。
　［実施例１］
　磁製カップの上にろ紙を置き、Ｇｅｌｅｓｔ社製Ｇｅ（ＣＨ3）4を注射器で０．５ｍＬ滴下し、その様子を観察した。５分後においても、ろ紙が燃えた形跡も焦げた形跡も観測されなかった。この実験を繰り返し３回実施したが同様の結果となった。このことから、自然発火性はないと確認された。
　［実施例２］
　磁製カップの上にろ紙を置き、Ｇｅｌｅｓｔ社製（ＣＨ3）3ＧｅＨを注射器で０．５ｍＬ滴下し、その様子を観察した。５分後においても、ろ紙が燃えた形跡も焦げた形跡も観測されなかった。この実験を繰り返し３回実施したが同様の結果となった。このことから、自然発火性はないと確認された。
　［実施例３］
　図１に示すプラズマＣＶＤ成膜装置を用いて、下記の手順により、非晶質水素化シリコンゲルマニウム合金膜を成膜した。
　図１に示すように、成膜装置は、真空チャンバ１と、上部放電電極２ａと、温度制御手段を備えた電極ヒータ１３を内蔵した下部放電電極２ｂと、高周波電源４と、排気システム５と、Ｈ2ボンベ６と、ＳｉＨ4ボンベ７と、Ｇｅ原料ボンベ８、マスフローコントローラ９ａ、９ｂ及び９ｃと、配管１０と、ヒータ１１と、コイルヒータ１２で構成されていた。上部放電電極２ａ及び下部放電電極２ｂは対向して真空チャンバ１内に配置され、成膜対象のガラス基板３は下部放電電極２ｂに載置された。真空チャンバ１には高周波電源４、排気システム５が接続されていた。そして、排気システム５により真空チャンバ１内が真空状態に維持された状態で高周波電源４により真空チャンバ１に高周波電圧が印加されると、上部放電電極２ａ、下部放電電極２ｂ間に真空放電が生じてプラズマが発生するようになっていた。また、真空チャンバ１は、配管１０を介して、Ｈ2ボンベ６、ＳｉＨ4ボンベ７及びＧｅ原料ボンベ８に連結されていた。本実施例では、Ｇｅ原料ボンベ８には、Ｇｅｌｅｓｔ社製Ｇｅ（ＣＨ3）4が充填されていた。配管１０の中途には、Ｈ2のガス流量、ＳｉＨ4のガス流量とＧｅ（ＣＨ3）4のガス量を制御するため、マスフローコントローラ９ａ、９ｂ、９ｃが設置された。Ｇｅ原料ボンベ８の周囲には、Ｇｅ（ＣＨ3）4を加温気化するためにヒータ１１が設置され、配管１０には、その内部を加温・維持するためにコイルヒータ１２が巻きつけられた。
　真空チャンバ１内の下部放電電極２ｂ上にガラス基板３を載置し、電極ヒータ１３により２００℃に加熱した。排気システム５により真空チャンバ１内を略１Ｐａの真空状態に維持し、高周波電源４により１３．５６ＭＨｚの高周波電圧を出力３０Ｗで印加した。一方、Ｇｅ原料ボンベ８内のＧｅ（ＣＨ3）4をヒータ１１により５０℃に加温気化し、コイルヒータ１２への通電により配管１０の内部を５０℃程度に加温・維持した。なお、１０ＭＰａ以上の高圧充填されたＧｅＨ4とは異なり、Ｇｅ（ＣＨ3）4は室温で３８０ｔｏｒｒ程度の蒸気圧をもつ液体であるため、５０℃におけるボンベ内圧力は略０．１２ＭＰａであった。
　この状態において、ＳｉＨ4ボンベ７から配管１０を介してＳｉＨ4ガスを真空チャンバ１内に導入した。また、加温気化させたＧｅ原料ボンベ８内のＧｅ（ＣＨ3）4を配管１０を介して真空チャンバ１内に導入した。ＳｉＨ4ガスとＧｅ（ＣＨ3）4ガスの流量は、各マスフローコントローラ９ｂおよび９ｃを用いて、トータルガス流量が４０ｓｃｃｍ、導入されるトータルガス中のＧｅ（ＣＨ3）4ガスのガス混合率が１体積％となるように調節した。これらの混合ガスは、同時にＨ2ボンベ６からマスフローコントローラ９ａにて流量３６０ｓｃｃｍに調節された水素ガスによって希釈され、チャンバ内に導入された。これにより、０．８ｎｍ／ｓ程度の蒸着速度にて成膜を行った。成膜時の真空チャンバ１内は圧力１０Ｐａに維持した。
　このようにしてガラス基板３上に膜厚１０００Åの非晶質水素化シリコンゲルマニウム合金膜を成膜し、暗導電率測定を行った。得られた膜の暗導電率は１．２×１０-8Ｓ／ｃｍであった。
　［実施例４］
　Ｇｅ（ＣＨ3）4ガス混合率を３体積％としたこと以外は実施例３と同様にして、ガラス基板３上に膜厚１０００Åの非晶質水素化シリコンゲルマニウム合金膜を成膜した。得られた膜について暗導電率測定を行ったところ、暗導電率は２．５×１０-8Ｓ／ｃｍであった。
　［実施例５］
　Ｇｅ（ＣＨ3）4ガス混合率を５体積％としたこと以外は実施例３と同様にして、ガラス基板３上に膜厚１０００Åの非晶質水素化シリコンゲルマニウム合金膜を成膜した。得られた膜について暗導電率測定を行ったところ、暗導電率は１．８×１０-8Ｓ／ｃｍであった。
　［実施例６］
　Ｇｅ（ＣＨ3）4ガス混合率を８体積％としたこと以外は実施例３と同様にして、ガラス基板３上に膜厚１０００Åの非晶質水素化シリコンゲルマニウム合金膜を成膜した。得られた膜について暗導電率測定を行ったところ、暗導電率は１．０×１０-8Ｓ／ｃｍであった。
　［実施例７］
　Ｇｅ（ＣＨ3）4を、ＳＴＲＥＭ社製（ＣＨ3）3ＧｅＨに代え、ガス混合率を０．８５体積％とし、ヒータ１０およびヒータ１１の温度を３５℃に設定したこと以外は実施例３と同様にして、ガラス基板３上に膜厚１０００Åの非晶質水素化シリコンゲルマニウム合金膜を成膜た。得られた膜について暗導電率測定を行ったところ、暗導電率は１．０×１０-8Ｓ／ｃｍであった。
　［実施例８］
　Ｇｅ（ＣＨ3）4を、Ｉｎｏｒｇ．Ｃｈｅｍ．１９６３，２，３７５．に記載されている方法を用いて得られた（ＣＨ3）2ＧｅＨ2に代え、ガス混合率を０．７体積％とし、ヒータ１０およびヒータ１１をはずしたこと以外は実施例３と同様にして、ガラス基板３上に膜厚１０００Åの非晶質水素化シリコンゲルマニウム合金膜を成膜した。得られた膜について暗導電率測定を行ったところ、暗導電率は１．１×１０-8Ｓ／ｃｍであった。
　［実施例９］
　Ｇｅ（ＣＨ3）4を、Ｉｎｏｒｇ．Ｃｈｅｍ．１９６３，２，３７５．に記載されている方法を用いて得られたＣＨ3ＧｅＨ3に代え、ガス混合率を０．６体積％とし、ヒータ１０およびヒータ１１をはずしたこと以外は実施例３と同様にして、ガラス基板３上に膜厚１０００Åの非晶質水素化シリコンゲルマニウム合金膜を成膜した。得られた膜について暗導電率測定を行ったところ、暗導電率は１．２×１０-8Ｓ／ｃｍであった。
　［実施例１０］
　以下の手順により、図２に示す光起電力装置を作成した。まず、ガラス基板２１上に、ＩＴＯからなる透明電極２２、１層目の光起電力素子を構成する膜厚１００ÅのＢ（ボロン）ドープのａ－Ｓｉ膜からなるｐ型層２３をプラズマＣＶＤ法により透明電極２２上に順次形成した。続いて、実施例３と同様の手法により膜厚１０００Åの非晶質水素化シリコンゲルマニウム合金膜からなるｉ型層２４をｐ型層２３に形成した。その後、膜厚１００ÅのＰ（リン）ドープのａ－Ｓｉからなるｎ型層２５をプラズマＣＶＤ法によりｉ型層２４上に形成した。引き続きＡｇの金属から成る金属電極２６をｎ型層２５上に積層して、光起電力装置を完成した。
　得られた光起電力装置に東京インスツルメンツ製３００Ｗソーラーシミュレータを用い発生させたＡＭ（エアマス）１．５Ｇの基準太陽光のスペクトルに準じた擬似太陽光を、強度１００ｍＷ／ｃｍ2で照射し、その光電変換特性を測定したところ、短絡電流密度１８ｍＡ／ｃｍ2、開放電圧０．７０Ｖ、フィルファクター０．７５、光電変換効率９．４５％となり、既存のモノゲルマンガスを用いた場合と同等の性能を示した。
　［実施例１１］
　実施例４と同じ手法で成膜した非晶質水素化シリコンゲルマニウム合金膜をｉ型層２５として用いたこと以外は実施例１０と同様に光起電力装置を作製した。得られた光起電力装置に東京インスツルメンツ製３００Ｗソーラーシミュレータを用い発生させたＡＭ（エアマス）１．５Ｇの基準太陽光のスペクトルに準じた擬似太陽光を、強度１００Ｗ／ｃｍ2で照射し、その光電変換特性を測定したところ、短絡電流密度１９．５ｍＡ／ｃｍ2、開放電圧０．６７Ｖ、フィルファクター０．７１、光電変換効率９．２８％となり、既存のモノゲルマンガスを用いた場合と同等の性能を示した。
　［実施例１２］
　実施例５と同じ手法で成膜した非晶質水素化シリコンゲルマニウム合金膜をｉ型層２５として用いたこと以外は実施例１０と同様に光起電力装置を作製した。得られた光起電力装置に東京インスツルメンツ製３００Ｗソーラーシミュレータを用い発生させたＡＭ（エアマス）１．５Ｇの基準太陽光のスペクトルに準じた擬似太陽光を、強度１００Ｗ／ｃｍ2で照射し、その光電変換特性を測定したところ、短絡電流密度２０．３ｍＡ／ｃｍ2、開放電圧０．６５Ｖ、フィルファクター０．６８、光電変換効率８．９７％となり、既存のモノゲルマンガスを用いた場合と同等の性能を示した。
　［実施例１３］
　実施例６と同じ手法で成膜した非晶質水素化シリコンゲルマニウム合金膜をｉ型層２５として用いた以外は実施例１０と同様に光起電力装置を作製した。得られた光起電力装置に東京インスツルメンツ製３００Ｗソーラーシミュレータを用い発生させたＡＭ（エアマス）１．５Ｇの基準太陽光のスペクトルに準じた擬似太陽光を、強度１００Ｗ／ｃｍ2で照射し、その光電変換特性を測定したところ、短絡電流密度２１．５ｍＡ／ｃｍ2、開放電圧０．６２Ｖ、フィルファクター０．６７、光電変換効率８．９３％となり、既存のモノゲルマンガスを用いた場合と同等の性能を示した。
　［実施例１４］
　実施例７と同じ手法で成膜した非晶質水素化シリコンゲルマニウム合金膜をｉ型層２５として用いたこと以外は実施例１０と同様に光起電力装置を作製した。得られた光起電力装置に東京インスツルメンツ製３００Ｗソーラーシミュレータを用い発生させたＡＭ（エアマス）１．５Ｇの基準太陽光のスペクトルに準じた擬似太陽光を、強度１００Ｗ／ｃｍ2で照射し、その光電変換特性を測定したところ、短絡電流密度１８．７ｍＡ／ｃｍ2、開放電圧０．７１Ｖ、フィルファクター０．７３、光電変換効率９．６９％となり、既存のモノゲルマンガスを用いた場合と同等の性能を示した。
　［実施例１５］
　実施例８と同じ手法で成膜した非晶質水素化シリコンゲルマニウム合金膜をｉ型層２５として用いたこと以外は実施例１０と同様に光起電力装置を作製した。得られた光起電力装置に東京インスツルメンツ製３００Ｗソーラーシミュレータを用い発生させたＡＭ（エアマス）１．５Ｇの基準太陽光のスペクトルに準じた擬似太陽光を、強度１００Ｗ／ｃｍ2で照射し、その光電変換特性を測定したところ、短絡電流密度１８．５ｍＡ／ｃｍ2、開放電圧０．７０Ｖ、フィルファクター０．７４、光電変換効率９．５８％となり、既存のモノゲルマンガスを用いた場合と同等の性能を示した。
　［実施例１６］
　実施例９と同じ手法で成膜した非晶質水素化シリコンゲルマニウム合金膜をｉ型層２５として用いたこと以外は実施例１０と同様に光起電力装置を作製した。得られた光起電力装置に東京インスツルメンツ製３００Ｗソーラーシミュレータを用い発生させたＡＭ（エアマス）１．５Ｇの基準太陽光のスペクトルに準じた擬似太陽光を、強度１００Ｗ／ｃｍ2で照射し、その光電変換特性を測定したところ、短絡電流密度１８．１ｍＡ／ｃｍ2、開放電圧０．７２Ｖ、フィルファクター０．７３、光電変換効率９．５１％となり、既存のモノゲルマンガスを用いた場合と同等の性能を示した。
　なお、上述の実施例では、成膜方法としてプラズマＣＶＤ法を用いたが、公知の光ＣＶＤ法またはマイクロＣＶＤ法等を用いても同様の効果が得られた。
　上述の通り、本発明のオリゴメチルゲルマン化合物、光起電力装置の光電変換層として成膜されるｐｉｎ接合の非晶質半導体膜に用いられる化合物として、化学的に安定であり、大量輸送しやすく、従来のゲルマニウム原料ガスであるゲルマン（ＧｅＨ4）の代替ガスとして有用であると言える。
　以上、本発明の実施形態について説明したが、本発明は上記実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲で、当業者の通常の知識に基づいて、以下の実施形態に対し適宜変更、改良可能であることはいうまでもない。

Claims (4)

  1. 光起電力装置の光電変換層として成膜されるｐｉｎ接合の非晶質半導体膜に用いられる、一般式（１）で表されるオリゴメチルゲルマン化合物。
    Figure JPOXMLDOC01-appb-C000001
     ［式中、ｎは１～４のいずれか一つの整数を表す。］
  2. 請求項１に記載の一般式（１）で表されるオリゴメチルゲルマン化合物を含む、光起電力装置の光電変換層としてｐｉｎ接合の非晶質半導体膜を成膜するための成膜ガス。
  3. ｉ型半導体となる非晶質水素化シリコンゲルマニウム合金膜を形成するための成膜ガスとして用いられる、請求項２に記載の成膜ガス。
  4. 一般式（１）で表されるオリゴメチルゲルマン化合物の含有量が０．０１～１０体積％の範囲内であることを特徴とする、請求項３に記載の成膜ガス。
PCT/JP2010/063546 2009-10-19 2010-08-10 非晶質半導体膜用オリゴメチルゲルマン化合物とこれを用いる成膜ガス WO2011048866A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-240317 2009-10-19
JP2009240317A JP2011086862A (ja) 2009-10-19 2009-10-19 非晶質半導体膜用オリゴメチルゲルマン化合物とこれを用いる成膜ガス

Publications (1)

Publication Number Publication Date
WO2011048866A1 true WO2011048866A1 (ja) 2011-04-28

Family

ID=43900106

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/063546 WO2011048866A1 (ja) 2009-10-19 2010-08-10 非晶質半導体膜用オリゴメチルゲルマン化合物とこれを用いる成膜ガス

Country Status (2)

Country Link
JP (1) JP2011086862A (ja)
WO (1) WO2011048866A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101659610B1 (ko) * 2014-03-18 2016-09-23 주식회사 유진테크 머티리얼즈 유기 게르마늄 아민 화합물 및 이를 이용한 박막 증착 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103831A (ja) * 1987-07-27 1989-04-20 Nippon Telegr & Teleph Corp <Ntt> 半導体膜の形成方法
JPH04291967A (ja) * 1991-03-20 1992-10-16 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPH0513346A (ja) * 1991-06-28 1993-01-22 Toshiba Corp 半導体装置の製造方法
WO2007002040A2 (en) * 2005-06-21 2007-01-04 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103831A (ja) * 1987-07-27 1989-04-20 Nippon Telegr & Teleph Corp <Ntt> 半導体膜の形成方法
JPH04291967A (ja) * 1991-03-20 1992-10-16 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPH0513346A (ja) * 1991-06-28 1993-01-22 Toshiba Corp 半導体装置の製造方法
WO2007002040A2 (en) * 2005-06-21 2007-01-04 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process

Also Published As

Publication number Publication date
JP2011086862A (ja) 2011-04-28

Similar Documents

Publication Publication Date Title
Sharma et al. Nanocrystalline silicon thin film growth and application for silicon heterojunction solar cells: a short review
JP2533639B2 (ja) Ｐ形炭素添加非晶質シリコンの生成方法
CN102656707B (zh) 薄膜硅叠层太阳能电池及其制造方法
JPH04266066A (ja) 光起電力素子
US20110114177A1 (en) Mixed silicon phase film for high efficiency thin film silicon solar cells
JPH01119015A (ja) 炭化ケイ素半導体膜およびその製造方法
Soukup et al. Thin films of a-SiGe: H with device quality properties prepared by a novel hollow cathode deposition technique
Ma et al. Size-controlled nc-Si: H/a-SiC: H quantum dots superlattice and its application to hydrogenated amorphous silicon solar cells
WO2011048866A1 (ja) 非晶質半導体膜用オリゴメチルゲルマン化合物とこれを用いる成膜ガス
CN101840941B (zh) 具有光伏和光电导效应的掺铁碳薄膜材料及其制备方法
Benigno et al. Effect of intrinsic layer energy gap and thicknesses optimization on the efficiency of pin amorphous silicon solar cell
Gudovskikh et al. n‐GaP/p‐Si Heterojunction Solar Cells Fabricated by PE‐ALD
Xiao et al. Chemically active plasmas for surface passivation of Si photovoltaics
Kwon et al. Effects of helium concentration on microcrystalline silicon thin film solar cells deposited by atmospheric-pressure plasma deposition at 13.3 kPa
WO2011036957A1 (ja) 非晶質半導体膜用オリゴメチルホスフィン化合物とこれを用いる成膜ガス
Yoshinaga et al. Fabrication of silicon and carbon based wide-gap semiconductor thin films for high conversion efficiency
JPH0918038A (ja) 光電変換素子
Lee et al. Characterization of microcrystalline silicon thin film solar cells prepared by high working pressure plasma-enhanced chemical vapor deposition
JP2011181658A (ja) 非晶質半導体膜用オリゴメチルアルシン化合物とこれを用いる成膜ガス
Veldhuizen et al. Hydrogenated amorphous silicon germanium by Hot Wire CVD as an alternative for microcrystalline silicon in tandem and triple junction solar cells
WO2012026894A1 (en) Tandem type thin film silicon solar cell with double layer cell structure
Kurokawa et al. Observation of the photovoltaics effect from the solar cells using silicon quantum dots superlattice as a light absorption layer
Veldhuizen Hot wire chemical vapor deposition for silicon and silicon-germanium thin films and solar cells
JPH04192373A (ja) 光起電力素子
Stepanov et al. Lowest surface recombination velocity on n-type crystalline silicon using PECVD a-Si: H/SiNx bi-layer passivation

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10824718

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 10824718

Country of ref document: EP

Kind code of ref document: A1