WO2011046216A1 - Microscope électronique - Google Patents

Microscope électronique Download PDF

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Publication number
WO2011046216A1
WO2011046216A1 PCT/JP2010/068200 JP2010068200W WO2011046216A1 WO 2011046216 A1 WO2011046216 A1 WO 2011046216A1 JP 2010068200 W JP2010068200 W JP 2010068200W WO 2011046216 A1 WO2011046216 A1 WO 2011046216A1
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WO
WIPO (PCT)
Prior art keywords
electrode
inspection object
sample
electron source
electron
Prior art date
Application number
PCT/JP2010/068200
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English (en)
Japanese (ja)
Inventor
陽一郎 根尾
昌善 長尾
知也 吉田
正剛 金丸
Original Assignee
国立大学法人静岡大学
独立行政法人産業技術総合研究所
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Priority to JP2011536198A priority Critical patent/JPWO2011046216A1/ja
Publication of WO2011046216A1 publication Critical patent/WO2011046216A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H01J2237/062—Reducing size of gun
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H01J2237/0635—Multiple source, e.g. comb or array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06375—Arrangement of electrodes

Definitions

  • the present invention relates to an electron microscope.
  • Non-Patent Document 1 a field emitter array (FEA), which is a minute electron source that forms a high-definition electron beam, has been studied, and a four-stage gate type FEA has already been developed (see Non-Patent Document 1).
  • FEA field emitter array
  • the four-stage gate type FEA includes four stacked electrodes EX, G1, G2, and G3.
  • the four-stage gate type FEA forms an einzel lens that is an electrostatic lens when a predetermined voltage is applied to each of the electrodes EX, G1, G2, and G3.
  • the four-stage gate type FEA emits an electron beam from the lowermost emitter substrate, converges the electron beam, and irradiates an anode phosphor. Fabrication of a field emitter array with a built-in Einzel lens, Nagao et al., Japanese Journal of Applied Physics, 48, 2009 Year
  • the four-stage gate type FEA of Non-Patent Document 1 can converge the electron beam and reduce the beam spot diameter.
  • the voltage of the electrode G2 is adjusted in the range of ⁇ 30 to 100 V
  • the beam spot diameter evaluated from the light emitting region of the phosphor is about Only 0.25-0.45mm.
  • the number of gates is three or less, a potential barrier is formed in the electron irradiation direction, and it becomes more difficult to converge the electron beam.
  • the present invention has been proposed to solve the above-described problems, and an object of the present invention is to provide an electron microscope capable of inspecting an ultrafine object by reducing the spot diameter of an electron beam.
  • the electron microscope according to the first aspect of the present invention includes an emitter substrate having a conical protrusion formed thereon, an insulating film with respect to the emitter substrate, and substantially the same height as the apex of the protrusion.
  • An extraction electrode having a hole for exposing the apex, and four or more electrodes laminated on the extraction electrode and having a hole for exposing the apex of the protrusion, the extraction electrode, and the An electron source having a plurality of insulating films formed between each of the four or more electrodes, the extraction electrode formed in the electron source, the four or more electrodes, and the inspection object, respectively.
  • Each of the four or more electrodes formed in the electron source is configured to emit an electron beam from the protrusion and to irradiate the inspection object by applying a predetermined voltage.
  • Out of Is applied to the outermost electrode closest to the inspection object and a voltage higher than that of the inspection object is applied to collect the secondary electrons emitted from the inspection object to the outermost electrode.
  • detecting means for detecting at least one of a signal based on secondary electrons collected by the outermost electrode of the electron source and a signal based on a current flowing through the inspection object, and detected by the detecting means
  • an image generation means for generating an image of the inspection object based on the received signal and the position where the inspection object is moved by the inspection object moving means.
  • An electron microscope according to a second aspect of the present invention is the electron microscope according to the first aspect, wherein the electron source forms an insulating film on the emitter substrate on which the conical protrusion is formed, and performs the insulation.
  • the electrode was formed on the film by repeating the etch back method of removing the apex portion of the electrode raised along the protrusions five times or more, and then exposing the protrusions by etching. is there.
  • An electron microscope according to a third aspect of the present invention is the electron microscope according to the first or second aspect, wherein the detection means is based on a signal based on the secondary electrons and a current flowing through the inspection object. And the image forming means subtracts the signal based on the secondary electrons detected by the detecting means and the signal based on the current flowing through the inspection object detected by the detecting means. The calculated value or the divided value is calculated, and an image of the inspection object is generated based on the calculated value and the position where the inspection object is moved by the inspection object moving means.
  • the electron microscope according to the present invention forms a fine spot diameter by focusing an electron beam, a high-definition object can be inspected.
  • FIG. 1 It is a figure which shows the structure of the electron microscope which concerns on embodiment of this invention. It is an expanded sectional view of a 5-stage gate type micro electron source. It is a schematic diagram of a 5-stage gate type micro electron source in a state where an electrostatic lens is formed. It is a figure which shows the secondary electron collection efficiency with respect to the applied voltage of a sample. It is a figure which shows the spot diameter of an electron beam at the time of applying various voltages to a 3rd electrode and a 4th electrode. It is a figure which shows the magnitude
  • FIG. 1 It is a perspective view of an electron source array. It is a figure which shows the in-line test
  • FIG. 1 is a diagram showing a configuration of an electron microscope according to an embodiment of the present invention.
  • the electron microscope includes a five-stage gate type micro-electron source 10, a voltage source 30, and a stage 40.
  • the five-stage gate type micro electron source 10 is a five-stage gate type field emitter array (FEA).
  • the voltage source 30 supplies a predetermined voltage to each electrode of the five-stage gate type micro electron source 10.
  • the stage 40 moves the sample 41 that is the inspection object in each of the x-axis, y-axis, and z-axis directions.
  • the five-stage gate type micro electron source 10 and the stage 40 for moving the sample 41 are provided in a vacuum container 45.
  • the electron microscope further includes a driver 50, a control system 60, an amplifier 70, and an arithmetic processing unit 80.
  • the driver 50 drives the stage 40.
  • the control system 60 controls the scanning range and scanning speed of the electron beam.
  • the amplifier 70 amplifies a signal based on secondary electrons emitted from the sample 41 and detected by the five-stage gate type micro electron source 10.
  • the arithmetic processing unit 80 images the state of the sample 41.
  • FIG. 2 is an enlarged cross-sectional view of the 5-stage gate type micro electron source 10.
  • the five-stage gate type micro-electron source 10 includes an emitter substrate 11 on which a conical protrusion 11 a is formed, a first insulating film 12 formed on the emitter electrode 11, and an extraction electrode formed on the first insulating film 12. 13, a second insulating film 14 formed on the extraction electrode 13, and a second electrode 15 formed on the second insulating film 14.
  • the five-stage gate type micro electron source 10 is formed on the third insulating film 16 formed on the second electrode 15, the third electrode 17 formed on the third insulating film 16, and the third electrode 17.
  • the electrode 21 is provided.
  • the first insulating film 12 is formed on the emitter substrate 11 such that the apex portion of the protrusion 11a of the emitter substrate 11 is exposed.
  • the extraction electrode 13 is formed along the surface of the protrusion 11a without contacting the protrusion 11a.
  • the extraction electrode 13 has a first hole 13a for exposing the apex of the protrusion 11a on an extension axis from the apex of the protrusion 11a.
  • the first hole 13a is formed at substantially the same position as the apex height of the protrusion 11a of the emitter substrate 11.
  • the second insulating film 14 is formed on the extraction electrode 13 so as not to block the first hole 13a.
  • the second electrode 15 is formed on the second insulating film 14 along the extraction electrode 13 without being in contact with the extraction electrode 13.
  • the 2nd electrode 15 has the 2nd hole 15a larger than the 1st hole 13a on the extension axis from the peak of projection 11a.
  • the third insulating film 16 is formed on the second electrode 15 so as not to block the second hole 15a.
  • the third electrode 17 is formed on the third insulating film 16 along the second electrode 15 without being in contact with the second electrode 15.
  • the 3rd electrode 17 has the 3rd hole 17a larger than the 2nd hole 15a on the extension axis from the peak of projection 11a.
  • the fourth insulating film 18 is formed on the third electrode 17 so as not to block the third hole 17a.
  • the fourth electrode 19 is formed on the fourth insulating film 18 along the third electrode 17 without being in contact with the third electrode 17.
  • the 4th electrode 19 has the 4th hole 19a larger than the 3rd hole 17a on the extension axis from the peak of projection 11a.
  • the fifth insulating film 20 is formed on the fourth electrode 19 so as not to block the fourth hole 19a.
  • the fifth electrode 21 is the outermost electrode of the five-stage gate type micro-electron source 10 and is formed on the fifth insulating film 20 along the fourth electrode 19 without being in contact with the fourth electrode 19.
  • the 5th electrode 21 has the 5th hole 21a larger than the 4th hole 19a on the extension axis from the peak of projection 11a.
  • the thus configured 5-stage gate type micro-electron source 10 repeats the etch-back method described in Non-Patent Document 1 (FIGS. 1B to 1E) a total of 5 times. It is produced by.
  • the etch back method comprising the following (1) to (3) is repeated five times for the emitter substrate 11 having the conical protrusion 11a formed thereon.
  • An insulating film SiO 2 layer
  • an electrode Nb layer
  • RIE Reactive ion etching
  • the insulating film around the protrusion 11a is removed by etching with a BHF (buffered hydrofluoric) solution so that the apex of the protrusion 11a is exposed.
  • BHF buffered hydrofluoric
  • the extraction electrode 13 and the second electrode 15 are 60V
  • the third electrode 17 and the fourth electrode 19 are 10V
  • the fifth electrode 21 is 100V.
  • 80 V is applied to the sample 41 by the voltage source 30.
  • the emitter substrate 11 is grounded.
  • the voltage applied to each electrode is not limited to these examples.
  • the extraction electrode 13 is 20 to 100 V
  • the second electrode 15 is 20 to 150 V
  • the third electrode 17 is ⁇ 100 V to +100 V
  • the fourth electrode 19 is ⁇ 100 to +100 V
  • the fifth electrode 21 is Applied in the range of 100-200V.
  • the 5-stage gate type micro electron source 10 exhibits the functions of the micro electron source and the converging optical system when a voltage is applied to each electrode as described above. That is, the 5-stage gate type micro-electron source 10 emits an electron beam, converges the electron beam with an electrostatic lens (Einzel lens), irradiates the sample 41, and emits secondary electrons emitted from the sample 41. Is detected.
  • an electrostatic lens Euzel lens
  • FIG. 3 is a schematic diagram of the five-stage gate type micro electron source 10 in a state where an electrostatic lens is formed.
  • a voltage is applied to each electrode of the five-stage gate type micro-electron source 10, as shown in the figure, between the second electrode 15 and the third electrode 17, and between the fourth electrode 19 and the fifth electrode 21.
  • electrostatic lenses are formed respectively.
  • the electron beam is emitted from the protrusion 11 a of the emitter substrate 11, the electron beam is focused and the sample 41 is irradiated with the electron beam.
  • the stage 40 moves in the x-axis direction and the y-axis direction to scan the sample 41 with the electron beam emitted from the five-stage gate type micro electron source 10.
  • the stage 40 moves in the z-axis direction to bring the five-stage gate type minute electron source 10 and the sample 41 closer to a predetermined distance.
  • the operating condition of the five-stage gate type micro electron source 10 is determined so that the spatial resolution of the image of the sample 41 is optimized.
  • the stage 40 is driven by the driver 50 via the control system 60 under the control of the arithmetic processing unit 80. For this reason, the arithmetic processing unit 80 can detect irradiation position information indicating the irradiation position of the electron beam on the sample 41.
  • 80 V is applied to the sample 41.
  • a current value (incident current value) in the sample 41 based on the incident electron beam is calculated by the arithmetic processing unit 80. Detected.
  • the amplifier 70 amplifies a signal based on the secondary electrons emitted from the sample 41 and collected by the fifth electrode 21 and supplies the amplified signal to the arithmetic processing unit 80.
  • the fifth electrode 21 functions not only for forming an electrostatic lens but also as a collector of secondary electrons emitted from the sample 41.
  • the distance between the 5-stage gate type micro electron source 10 and the sample 41 be 50 ⁇ m or less.
  • the fifth electrode 21 has a diameter of about 200 ⁇ m (capturing secondary electrons up to an emission angle of 126 degrees) and a gate diameter (the diameter of the fifth hole 21a) of about 4 ⁇ m, collection of secondary electrons. In calculating the efficiency, the area of the opening can be ignored.
  • the distance between the 5-stage gate type micro electron source 10 and the sample 41 is as narrow as 50 ⁇ m or less as described above, the secondary electron emission density angle dependency can be approximated by a trigonometric function, and the fifth electrode 21 can be approximated.
  • the collection efficiency of secondary electrons at is 95% or more.
  • the incident electron beam is a low energy electron beam having an energy of 200 V or less. Most of the electron energy emitted from the sample 41 is occupied by secondary electrons, and neither reflected electrons nor Auger electrons are included. For this reason, when a voltage higher than that of the sample 41 is applied to the fifth electrode 21, most of the secondary electrons emitted from the sample 41 are taken into the fifth electrode 21.
  • the fifth electrode 21 can collect secondary electrons with high efficiency as described above.
  • the arithmetic processing unit 80 detects the incident current value in the sample 41 and the current value based on the secondary electrons emitted from the sample 41.
  • the current value of the electron beam emitted from the five-stage gate type micro electron source 10 is I, and ⁇ ⁇ 100 [%] of the emitted electron beam is emitted as secondary electrons, secondary electrons are emitted.
  • the current value based on is ⁇ I.
  • the current value in the sample 41 is (1 ⁇ ) I.
  • the current I can be calculated or measured in advance, and ⁇ varies depending on the state of the sample 41 at the position irradiated with the electron beam. Therefore, if ⁇ I or (1- ⁇ ) I is detected at each xy position of the sample 41, the value is detected as the state of the sample 41.
  • the arithmetic processing unit 80 detects the current value ⁇ I based on the secondary electrons or the incident current value (1- ⁇ ) I in the sample 41 for each electron beam irradiation position, and normalizes the detected value ( For example, it is converted into a luminance signal of 256 gradations). Thereby, an image of the sample 41 can be generated.
  • the arithmetic processing unit 80 does not use any one of the current value ⁇ I and the incident current value (1- ⁇ ) I, but subtracts or divides two current values and uses the obtained value to perform a sample. Forty-one images may be generated. Thereby, SN ratio can be improved.
  • the arithmetic processing unit 80 may generate an image of the sample 41 by using an arithmetic method different from the above-described arithmetic method using at least one of the current value ⁇ I and the incident current value (1- ⁇ ) I. Further, the arithmetic processing unit 80 may display the image generated as described above on a monitor.
  • FIG. 4 is a diagram showing the secondary electron collection efficiency with respect to the applied voltage of the sample 41. That is, the collection efficiency of secondary electrons in the fifth electrode 21 and the sample 41 when the applied voltage of the sample 41 is a variable parameter is shown.
  • the interval between the five-stage gate type micro electron source 10 and the sample 41 is 50 ⁇ m, and a voltage of 100 V is applied to the fifth electrode 21.
  • FIG. 5 shows electrons when various voltages ( ⁇ 20 to 100 V) are applied to the third electrode 17 and the fourth electrode 19 which are intermediate electrodes for forming the Einzel lens in the five-stage gate type micro electron source 10. It is a figure which shows the spot diameter of a beam. At this time, the spot diameter is 10 to 200 nm (in FIG. 2, 0 V for the emitter substrate 11, 60 V for the extraction electrode 13, 100 V for the second electrode 15, -20 V for the third electrode 17 and the fourth electrode 19, and the fifth electrode In this case, a spot diameter much smaller than that of the prior art is obtained. The spot diameter depends not only on the voltage applied to each electrode but also on the amount of current.
  • the spot diameter is about 10 to 200 nm.
  • the spot diameter can be further reduced by increasing the number of gate stages or increasing the thickness of the gate.
  • FIG. 6 is a diagram showing the size of the spot diameter on the anode (sample 41) with respect to the voltage applied to the third electrode 17 and the fourth electrode 19 which are intermediate electrodes.
  • a voltage of 50 V is applied to the extraction electrode 13 and a voltage of 100 V is applied to the second electrode 15 and the fifth electrode 21.
  • Non-Patent Document 1 For reference, the size of the spot diameter by the four-stage gate type micro electron source of Non-Patent Document 1 is shown under the same conditions.
  • a voltage of 50 V is applied to the extraction electrode of the four-stage gate type micro-electron source, and a voltage of 100 V is applied to the electrode formed on the extraction electrode and the outermost electrode closest to the anode, and is formed below the outermost electrode. This electrode becomes the intermediate electrode.
  • the “5-stage” 5-stage gate type micro-electron source 10 generally has a larger spot diameter than the 4-stage gate-type micro electron source of Non-Patent Document 1 “4-stage”. Becomes smaller. Further, the voltage of the “five-stage” intermediate electrode may be 5 to 10 V when the spot diameter is 1 ⁇ 10 ⁇ 5 m or less near the minimum value. On the other hand, the “4-stage” intermediate electrode needs to be ⁇ 55 to ⁇ 45 V when the spot diameter is set to 2 ⁇ 10 ⁇ 5 m or less near the minimum value. That is, the “5-stage” intermediate electrode can be made with a smaller voltage than the “4-stage”.
  • the electron microscope according to the present embodiment can focus the electron beam in the vicinity of the sample 41 by using the five-stage gate type micro electron source 10.
  • the electron microscope eliminates the need for the huge housing used in the conventional electron microscope in order to form a high-definition electron beam, and can reduce the size up to 1/1000000. Thereby, space saving of the housing of the electron microscope can be achieved, and since the evacuation system can be reduced because the occupied volume of the apparatus itself is small, it is possible to realize the reduction of power consumption associated therewith.
  • the efficiency of the electron beam that the conventional electron beam microscope exits from the cathode and reaches the sample is about 1 / 10,000, whereas the electron microscope according to the present embodiment has an electron beam utilization efficiency close to 100%, The acceleration voltage is about 100V. Therefore, the electron beam microscope can reduce the power consumption of the apparatus itself.
  • the electron microscope can collect the secondary electrons emitted from the sample 41 using the fifth electrode 21 for forming the electrostatic lens. Therefore, the collecting unit for collecting the secondary electrons It is possible to save the labor and cost of providing the device. Further, the electron microscope can reduce the power consumption because the size of the intermediate electrode for forming the electrostatic lens can be made smaller than before.
  • FIG. 7A is a front view of an electron source array 100 in which five-stage gate type micro electron sources 10 are integrated and arranged in a column shape.
  • FIG. 7B is a perspective view of the electron source array 100.
  • the electron source array 100 configured as described above can be used for in-line inspection in semiconductor manufacturing, for example.
  • FIG. 8 is a diagram showing an in-line inspection in semiconductor manufacturing using the electron source array 100.
  • An electron source array 100 in which five-stage gate type micro-electron sources are integrated in a row is mounted on a stage and configured to move in one direction.
  • a wafer 41a as a sample is placed on the stage 40.
  • the wafer 41 a is movable in a direction orthogonal to the moving direction of the electron source array 100. Thereby, the wafer 41a can be inspected by passing the wafer 41a under the electron source array 100.
  • the five-stage gate type micro-electron source 10 is described as an example.
  • the micro-electron source is not limited to the five-stage gate type, and is a multi-stage gate type having six or more stages. Also good.
  • FIG. 9 is an enlarged cross-sectional view of the six-stage gate type micro electron source 10a.
  • the six-stage gate type minute electron source 10a is formed on the sixth insulator 22 formed on the fifth electrode 21 of the five-stage gate type minute electron source 10 shown in FIG. A sixth electrode 23;
  • the sixth insulating film 22 is formed on the fifth electrode 21 so as not to block the fifth hole 21a.
  • the sixth electrode 23 is formed on the sixth insulating film 22 along the fifth electrode 21 without contacting the fifth electrode 21.
  • the sixth electrode 23 has a sixth hole 23a larger than the fifth hole 21a on the extension axis from the apex of the protruding portion 11a.
  • the thus configured six-stage gate type micro electron source 10a repeats the etch-back method six times on the emitter substrate 11 having the conical protrusion 11a formed to expose the apex of the protrusion 11a. In this manner, the insulating film around the protrusion 11a is removed by etching with a BHF solution.
  • the extraction electrode 13 and the second electrode 15 are 60V
  • the third electrode 17 is 20V
  • the fourth electrode 19 and the fifth electrode 21 are 5V.
  • the voltage source 30 applies 100 V to the sixth electrode 23 and 80 V to the sample 41.
  • the emitter substrate 11 is grounded.
  • the six-stage gate type micro electron source 10a exhibits the functions of the micro electron source and the focusing optical system when a voltage is applied to each electrode as described above.
  • FIG. 10 is a schematic view of a six-stage gate type micro electron source 10a in a state where an electrostatic lens is formed.
  • a voltage is applied to each electrode of the six-stage gate type micro-electron source 10a, as shown in the figure, between the second electrode 15 and the third electrode 17 and between the fourth electrode 19 and the fifth electrode 21.
  • electrostatic lenses are formed respectively.
  • the same voltage as that of the extraction electrode 13 is applied to the second electrode 15.
  • the second electrode 15 serves as a shield electrode for preventing the influence of the extraction electrode 13 on the electrostatic lens.
  • the electron source array is not limited to being integrated in the one-dimensional direction as shown in FIGS. 7 and 8, and may be integrated in the two-dimensional direction. This makes it possible to inspect the wafer without moving the wafer or the electron source array.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

La présente invention se rapporte à un microscope électronique comprenant une source microélectronique à quintuple grille (10) qui est pourvue : d'un substrat émetteur (11) sur lequel une protubérance conique (11a) est formée ; d'une électrode d'extraction (13) qui est formée via une couche mince isolante (12) et qui a un trou (13a) ; de quatre électrodes (15, 17, 19, 21) qui sont appliquées par stratification sur l'électrode d'extraction (13) et qui ont des trous à travers lesquels la pointe de la protubérance (11a) est mise à nu et d'une pluralité de couches minces isolantes formée entre les électrodes. Le microscope électronique selon l'invention comprend également une source de tension (30) qui applique une tension sur les électrodes formées dans la source microélectronique à quintuple grille (10) et un échantillon (41) ; un étage (40) pour déplacer l'échantillon (41); et un module de traitement arithmétique (80) qui génère une image de l'échantillon (41) sur la base, au moins, d'un signal qui est fonction d'électrons secondaires émis par l'échantillon (41) ou d'un signal qui est fonction d'un courant qui passe à travers l'échantillon (41), et de la position de l'échantillon (41) qui a été déplacé par l'étage (40). Le microscope électronique réduit le diamètre de point d'un faisceau d'électrons pour inspecter des objets à l'échelle sous-microscopique.
PCT/JP2010/068200 2009-10-16 2010-10-15 Microscope électronique WO2011046216A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5481075A (en) * 1977-11-24 1979-06-28 Cho Lsi Gijutsu Kenkyu Kumiai Method of detecting article image using electron beam
JPH05182627A (ja) * 1991-10-31 1993-07-23 Mitsubishi Electric Corp 超小型表面センサー及び表面測定装置
WO2008090380A1 (fr) * 2007-01-25 2008-07-31 Nfab Limited Générateur amélioré de faisceau de particules
JP2010055907A (ja) * 2008-08-28 2010-03-11 National Institute Of Advanced Industrial Science & Technology 集束電極一体型電界放出素子及びその作製方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5481075A (en) * 1977-11-24 1979-06-28 Cho Lsi Gijutsu Kenkyu Kumiai Method of detecting article image using electron beam
JPH05182627A (ja) * 1991-10-31 1993-07-23 Mitsubishi Electric Corp 超小型表面センサー及び表面測定装置
WO2008090380A1 (fr) * 2007-01-25 2008-07-31 Nfab Limited Générateur amélioré de faisceau de particules
JP2010055907A (ja) * 2008-08-28 2010-03-11 National Institute Of Advanced Industrial Science & Technology 集束電極一体型電界放出素子及びその作製方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
M. NAGAO ET AL.: "Fabrication of a Field Emitter Array with a Built-in Einzel Lens", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, 22 June 2009 (2009-06-22), pages 06FK02-1 - 06FK02-4 *

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