WO2011042660A2 - Production of thin films having photovoltaic properties and containing a i-iii-vi2-typealloy, comprising successive electrodeposits and thermal post-treatment - Google Patents
Production of thin films having photovoltaic properties and containing a i-iii-vi2-typealloy, comprising successive electrodeposits and thermal post-treatment Download PDFInfo
- Publication number
- WO2011042660A2 WO2011042660A2 PCT/FR2010/052105 FR2010052105W WO2011042660A2 WO 2011042660 A2 WO2011042660 A2 WO 2011042660A2 FR 2010052105 W FR2010052105 W FR 2010052105W WO 2011042660 A2 WO2011042660 A2 WO 2011042660A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- iii
- alloy
- temperature
- layers
- layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000011282 treatment Methods 0.000 title claims abstract description 11
- 239000010409 thin film Substances 0.000 title claims abstract description 5
- 239000002659 electrodeposit Substances 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 51
- 239000000956 alloy Substances 0.000 claims abstract description 51
- 238000000151 deposition Methods 0.000 claims abstract description 31
- 238000005868 electrolysis reaction Methods 0.000 claims abstract description 25
- 238000000137 annealing Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 229910052738 indium Inorganic materials 0.000 claims description 34
- 238000010438 heat treatment Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 23
- 230000008021 deposition Effects 0.000 claims description 21
- 239000011669 selenium Substances 0.000 claims description 18
- 229910052717 sulfur Inorganic materials 0.000 claims description 18
- 229910052711 selenium Inorganic materials 0.000 claims description 14
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 6
- 238000009833 condensation Methods 0.000 claims description 3
- 230000005494 condensation Effects 0.000 claims description 3
- 229910000714 At alloy Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 107
- 239000010949 copper Substances 0.000 description 65
- 229910052802 copper Inorganic materials 0.000 description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 31
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 23
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 15
- 238000010349 cathodic reaction Methods 0.000 description 15
- 229910052750 molybdenum Inorganic materials 0.000 description 15
- 239000011733 molybdenum Substances 0.000 description 15
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 14
- 239000011593 sulfur Substances 0.000 description 12
- MINVSWONZWKMDC-UHFFFAOYSA-L mercuriooxysulfonyloxymercury Chemical compound [Hg+].[Hg+].[O-]S([O-])(=O)=O MINVSWONZWKMDC-UHFFFAOYSA-L 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000004070 electrodeposition Methods 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 239000001509 sodium citrate Substances 0.000 description 8
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 8
- 229940038773 trisodium citrate Drugs 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000010935 stainless steel Substances 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 229910052938 sodium sulfate Inorganic materials 0.000 description 6
- 235000011152 sodium sulphate Nutrition 0.000 description 6
- 238000005987 sulfurization reaction Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910002058 ternary alloy Inorganic materials 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017121 AlSiO Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910003363 ZnMgO Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000019256 formaldehyde Nutrition 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910000371 mercury(I) sulfate Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Definitions
- the present invention relates to the manufacture of photovoltaic cells in particular for the conversion of solar energy into electricity. More particularly, such cells often have a structure according to a stack of thin layers and at least one of these thin layers has photovoltaic properties.
- the present invention relates in particular to the preparation and production of this photovoltaic layer, called "absorber" thereafter.
- the absorber is prepared here by electro-deposition. It is based on an alloy formed of the elements of columns I (such as copper), III (such as indium and / or gallium and / or aluminum) and VI (such as sulfur and / or selenium) . Such an alloy, of overall stoichiometry close to I-III-VI 2 , is known to offer good photovoltaic properties.
- a solid alloy I-III is first formed by electro-deposition and the element VI is then brought by annealing in an atmosphere rich in element VI.
- two electrodes to which a potential difference (in volts) is applied are immersed in an electrolysis bath containing suitable salts (for example compounds based on copper, or indium or gallium, as will be seen further) and the deposit is formed on one of the electrodes.
- the alloy I-III locally has inhomogeneities of composition with respect to the overall deposition, as well as irregularities in shape (cavities, interface irregularities or others). In addition, these defects remain present in the final layer after input of the VI element and the photovoltaic conversion efficiency is affected.
- the present invention improves the situation. Presentation of the invention
- the present invention thus aims at a process for manufacturing a thin film with photovoltaic properties, in particular for application in a solar cell, based on an alloy of type I-III-VI 2 and deposited by electrolysis, the process comprising less steps:
- step a) comprises in particular the operations:
- the total thickness of the multilayer structure may be chosen in order to limit the decohesion phenomena related to the differences in mechanical behavior of the successive layers.
- the total thickness of the final structure may be, for example, between 1 and 3 ⁇ , after addition of element VI.
- the process in the sense of the invention preferentially comprises distinct deposition conditions for at least two layers of the same element.
- the second element layer I it is advantageous for the second element layer I to be deposited at a higher electrode potential, in absolute value, at the deposition potential of the first element layer I.
- the deposition potential of the first layer deposited is -IV relative to a reference electrode, while the second layer of copper element can be deposited at a potential of -1.3 V.
- the respective thicknesses of the layers deposited in the operation al), as for them, can be functions of a proportion chosen between the elements I and III in the alloy
- the multilayer structure of step a1) preferably comprises a Cu / In atomic ratio of between 1.2 and 2.0.
- the multilayer structure of step a1) preferably comprises:
- An advantageous multilayer structure is such that at least one of the element III layers of the structure has at least two distinct element III sub-layers.
- a possible multilayer structure may be of Cu / In / Ga / Cu / In / Ga type.
- EA and EB are the thicknesses of the layers respectively of element A and element B,
- DA and DB are their respective densities
- RA and RB are their respective molar masses.
- the relative thicknesses of the element layers I and III in the multilayer structure of the operation a1) can be chosen further depending on the conditions of heat treatment and / or element VI input. For example, if the heat treatment occurs at a temperature above 156 ° C, corresponding to the melting temperature of indium as element III, indium leakage may occur. However, it is possible to compensate for this indium leakage by providing thicker indium layers, thus bringing more indium to the overall stoichiometry of the multilayer structure, which makes it possible, for example, to operate an accelerated heat treatment at a higher temperature. a temperature above 156 ° C.
- the relative thicknesses of the element layers I and III in the multilayer structure can be further selected according to a desired degree of inter-miction between the elements I and III in the alloy I-III of the operation a2) .
- a desired degree of inter-miction between the elements I and III in the alloy I-III of the operation a2) .
- this degree of inter-miction still depends on the heat treatment conditions to obtain the alloy I-III, but also to obtain the final ternary alloy I-III-VI 2 (after adding element VI). Preferred characteristics of heat treatments are given by way of example hereinafter.
- Operation a2) preferably comprises an elevation at an alloy temperature of between 100 and 250 ° C. for a duration of between 5 and 120 minutes. It can be followed by a return to ambient temperature in a time of between 20 and 180 seconds to soak the alloy I-III before the input of element VI. Alternatively, the alloy I-III is maintained at alloy temperature before the input element VI.
- the addition of element VI may also comprise a second heat treatment, preferably in a VI element atmosphere with a rise in temperature to a temperature of between 450 and 600 ° C., and then maintaining it at this temperature. temperature for a period of between 30 and 600 seconds.
- the rate of rise in temperature can be between 3.5 ° C / s and 20 ° C / s.
- This type of heat treatment is particularly favorable for the addition of sulfur as element VI in the thin layer based on the ternary alloy I-III-VI 2 .
- the sulfur is supplied in a mixture of argon and / or nitrogen and sulfur vapor at a controlled pressure of between 10 and 1200 mbar.
- the input element VI may comprise:
- This type of treatment is particularly suitable for the supply of selenium as element VI.
- this VI element delivery treatment is advantageous in the case of a multilayer structure within the meaning of the invention, it could also be suitable for any other type of initial thin layer (for example an initial structure I / III or III / I, before annealing, or an initial layer of alloy I-III directly electro-deposited).
- this treatment can be subject to a separate protection, independent of the type of layers (I, III) previously electro-deposited.
- this treatment can be continued by sulfurization according to the second heat treatment described above to obtain a ternary alloy I-III- (S, Se) 2 including both selenium and sulfur as element VI .
- the multilayer structure begins with an element layer I (such as copper), in contact with a substrate (often in molybdenum) or in contact with an adaptation layer (of ruthenium for example as described below). ), on which the multilayer structure is deposited. Moreover, it has proved particularly advantageous that the multilayer structure terminates, on the surface, with an element layer I, such as copper, to limit possible evaporation of element III, such as indium.
- the present invention also relates to a thin layer with photovoltaic properties, based on a type I-III-VL alloy and obtained by the process according to the invention.
- the layer may comprise, in thickness, an alternating variation of proportion of alloy element I and element III.
- the invention also relates to the method of manufacturing a solar cell comprising the steps of the method within the meaning of the invention for manufacturing a thin film with photovoltaic properties as an absorber. Indeed, the process can then be continued by the deposition of a coating layer acting as a transparent optical window, then doped layers, etc.
- the present invention also relates to a solar cell comprising an active layer in the sense of the invention.
- the implementation of such an embodiment makes it possible to control a mechanical effect.
- the fact of stacking thin layers makes it possible to redistribute the constraints in these layers in order to reduce a moment of release force and thus to improve the resistance of the layers to the substrate during heat treatment.
- the stack I / III / I / III is only one pass in an electrolysis bath and the annealing and the input element VI can also be done in one pass in a oven or an oven appropriate.
- alloy I-III like the elementary layers I and III, are metallic, therefore conductive, and therefore adapted to receive an electrolysis deposit which covers them.
- FIG. 1 schematically represents a stack according to a multilayer structure I / III / I / III according to a first embodiment in which the element layers I are 150 nm thick and comprise copper and the layers of element III are 200 nm thick and comprise indium, to reach a total thickness of 700 nm,
- FIG. 2 diagrammatically represents a stack according to a multilayer structure I / III / I / III according to a second embodiment in which the element layers I are 300 nm thick and comprise copper and the element layers III are 400 nm thick and have indium, to reach a total thickness of 1400 nm,
- FIG. 3 schematically represents a stack according to a third embodiment in which the element layers I are 60 nm thick. and comprise copper and the element layers III are 80 nm thick and comprise indium, to reach a total thickness of 700 nm,
- FIG. 4 diagrammatically represents a stack corresponding to that illustrated in FIG. 1 but in which the copper layers have a thickness of 120 nm and furthermore comprise a fifth layer of copper covering the stack and having a thickness of 60 nm according to a fourth embodiment
- FIG. 5 schematically represents a stack I / III / I / III according to a fifth embodiment, of Cu type (115 nm thick), In (200 nm thick), Ga (65 nm thick), Cu (1 nm thick), In (200 nm thick), Ga (65 nm thick), and
- FIG. 6 schematically represents a stack I / III / I / III according to a sixth embodiment, of Cu (40 nm of thickness), Ga (130 nm of thickness), Cu (190 nm of thickness), In (400 nm thick).
- a layer of molybdenum Mo is deposited on a soda-lime glass substrate (of thickness l-3mm or a sheet of metal preferably in stainless steel 430 and with a thickness of 50-500 ⁇ ) by sputtering. 400-1000 nm thick, and preferentially 500 nm (square resistance between 0.1-0.4 ⁇ ),
- an oxide SiO x , Al 2 O 3 , AlSiO x , sintered glass
- Cr chromium barrier layer with a thickness of 20-3000 nm depending on the material used, is added ;
- a layer of ruthenium is added, tantalum by sputtering (thickness 2-20 nm) to improve the adhesion properties of the future copper layer on molybdenum;
- the Cu-In or Cu-In-Ga metal alloy is then deposited, as will be seen below, by successive electro-deposition of layers of Cu, In (and optionally
- This step also allows the incorporation of a certain amount of sodium in the layer
- the heat treatment is carried out to form the ad hoc alloy, followed by another annealing under the atmosphere of sulfur and / or selenium for the input of element VI.
- the layers formed by electro-deposition of Cu and In must make it possible to obtain a Cu / ln atomic ratio of between 1.2 and 2.0, preferably 1.65.
- the layers formed by electro-deposition of Cu, In and Ga must make it possible to obtain a Cu / (In + Ga) atomic ratio of between 0.8 and 1.0, preferably 0.9 and Ga / (In + Ga) between 0.1 and 0.4, preferably 0.3.
- FIGS. 1 to 6 show (in relative scale) the optimal thicknesses of elementary layers of the stack of each of the six embodiments described below.
- the first part of the heat treatment makes it possible to form from the metallic copper and the metastable alloy Culn 2 , the Cunlnç alloy. If the layers deposited by electrolysis are Cu, In and Ga, the first part of the heat treatment makes it possible to form the alloy Cu x In y Ga z (with x, y and z such that the proportion of alloy varies from Cunln to CuGa 2 ).
- the first part of the heat treatment is carried out under controlled pressure under an inert atmosphere of nitrogen or argon to prevent oxidation of the copper and indium metal layers.
- This alloy is then subjected to a second heat treatment step in a sulfurized or selenized atmosphere to allow the reaction and the formation of the chalcopyrite structure CIS, CISe, CIGSe, CIGS or CIGSSe.
- Sulfur or selenium may be introduced (before or during heat treatment) in solid form S or Se (powder, pellet, CBD on the sample), liquid by spray or gaseous (H 2 S, H 2 Se, sulfur or elemental selenium vaporized).
- a layer of CdS (thickness 30-100nm, preferably 50nm) or ZnS (thickness 10-50nm, preferably 20nm) is deposited chemically. If this previous layer is CdS, a layer of iZnO (thickness 30-150 nm, preferably 80 nm) is deposited by sputtering. If the previous layer is ZnS, a layer of ZnMgO (thickness 30-150nm, preferably 90nm) is deposited by sputtering. Finally, an Al doped ZnO layer (thickness 300-1500 nm, preferentially 500 nm) is deposited by sputtering. After discretization or deposition of a collection grid, a photovoltaic cell is obtained, which can then be used to measure the conversion efficiency.
- a CIS layer may be formed on a glass substrate (3mm) / molybdenum (500nm) or stainless steel 430 (127 ⁇ ) / 8 ⁇ ⁇ (1000nm) / molybdenum (500nm) by:
- the layers are deposited by a cathodic reaction to intensity imposed at -0.5 mA.cm " .
- the deposition potential is then between -1.05 and -1.09 V / MSE
- the bath temperature is 20-25 ° C (room temperature) and the bath is agitated.
- e 1 schematically illustrates the stack obtained before heat treatment.
- a thermal treatment aimed at the formation of the Cunln compound is carried out at a temperature of between 100 and 250 ° C., preferably between 120 ° C. and 200 ° C. (for example 155 ° C.), for a time of between 5 and 120 min (for example 30 min) depending on the degree of inter-diffusion desired.
- This heat treatment is carried out under controlled pressure under an inert atmosphere of nitrogen or argon to prevent oxidation of the copper and indium metal layers.
- the stack is brought back to ambient temperature in a time of between 20 and 180 seconds, preferably between 20 and 60 seconds (for example 45 seconds) in order to quench the Cunlng alloy and retain this structure for the time being. 'next step.
- the second annealing step consists in increasing the temperature of the mixture between the Cunin alloy and the surplus metal copper to a maximum temperature of between 450 and 600 ° C. (for example 500 ° C.) and then maintaining it at this temperature for a period of between 30 and 600 seconds, preferably between 90 and 180s (for example 120s).
- the rate of rise in temperature is between 3.5 ° C./s and 20 ° C./s, more preferably between 7 ° C./s and 12 ° C./s (for example 8 ° C./s).
- This treatment is carried out under a sulfur atmosphere of a mixture of argon or nitrogen and of sulfur vapor, at a controlled pressure which can be chosen between 10 and 1200 mbar (for example 1100 mbar).
- the sulfur is introduced prior to the rise in temperature in the chamber near the sample in the form of powder.
- the amount of sulfur used is between 1 and 10 times the stoichiometry.
- Al doped ZnO of thickness 500nm by sputtering Al doped ZnO of thickness 500nm by sputtering.
- a CIS layer may be formed on a glass substrate (3mm) / molybdenum (500nm) or stainless steel 430 (127 ⁇ ) / 8 ⁇ ⁇ (1000nm) / molybdenum (500nm) by:
- FIG. 2 schematically illustrates the stack obtained before heat treatment. 5- repetition of operations 5-9 of the first embodiment
- a CIS layer may be formed on a glass substrate (3mm) / molybdenum (500nm) or stainless steel 430 (127 ⁇ ) / 8 ⁇ ⁇ (1000nm) / molybdenum (500nm) by:
- Figure 3 schematically illustrates the stack obtained before heat treatment.
- a CIS layer may be formed on a glass substrate (3mm) / molybdenum (500nm) or stainless steel 430 (127 ⁇ ) / 8 ⁇ ⁇ (1000nm) / molybdenum (500nm) by:
- This superficial layer of Cu aims to avoid the evaporation of In x S y during the heat treatment of sulfurization, to limit the roughness of the alloy before sulphurization and to improve the coverage of Cu x S binaries at the CIS surface.
- Figure 4 schematically illustrates the stack obtained before heat treatment.
- a layer of CIG (S) Se can be formed on a glass substrate (3mm) / molybdenum (500nm) or stainless steel 430 (127 ⁇ ) / 8 ⁇ ⁇ (1000nm) / molybdenum (500nm) by:
- a heat treatment intended to form a Cu x In y Ga z alloy is carried out at a temperature of between 25 and 200 ° C., preferably between 25 ° C. and 100 ° C. for a duration of between 1 and 30 ° C. min depending on the degree of inter-diffusion desired.
- FIG 5 illustrates schematically the stack obtained before heat treatment.
- a layer of CIG (S) Se can be formed on a glass substrate (3mm) / molybdenum (500nm) or stainless steel 430 (127 ⁇ ) / 8 ⁇ ⁇ (1000nm) / molybdenum (500nm) by:
- the precursors are deposited by a cathodic reaction at an imposed potential, at -1.1V relative to the reference electrode (mercurous sulphate).
- the current density is -l, 5mA.cm " .
- Figure 6 schematically illustrates the stack obtained before heat treatment.
- a heat treatment intended to form a Cu x In y Ga z alloy is carried out at a temperature of between 100 and 250 ° C., preferably between 120 ° C. and 200 ° C. (for example 155 ° C.), for a period of between 5 and 120 min (for example 30 min) depending on the degree of inter-diffusion desired.
- a satisfactory embodiment for obtaining a thin layer of CIS of thickness 2 ⁇ consists in depositing under the conditions of the first to fourth embodiments above: 235 nm of copper, 325 nm of indium, 235 nm of copper and 325 nm of indium, to obtain about 1120 nm of Cu / In / Cu / In stacking, then to carry out a heat treatment and a contribution of element VI (sulfur for example). It will be noted that the layer passes from a thickness of about 1120 nm before sulfurization to a thickness of 2 ⁇ m after sulfurization.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10778700.4A EP2486603B1 (en) | 2009-10-07 | 2010-10-06 | Production of thin films having photovoltaic properties and containing a i-iii-vi2-type alloy, comprising successive electrodeposits and thermal post-treatment |
US13/500,183 US8883547B2 (en) | 2009-10-07 | 2010-10-06 | Production of thin films having photovoltaic properties, comprising depositing an alternate I/III or III/I multi-layer structure and annealing said structure |
CN201080056339.3A CN102714254B (en) | 2009-10-07 | 2010-10-06 | Production of thin films having photovoltaic properties and containing a I-III-VI2-type alloy, comprising successive electrodeposits and thermal post-treatment |
JP2012532651A JP5583776B2 (en) | 2009-10-07 | 2010-10-06 | Production of thin films with photovoltaic properties and containing type I-III-VI2 alloys, including sequential electrodeposition and thermal post-treatment |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0956996 | 2009-10-07 | ||
FR0956996A FR2951022B1 (en) | 2009-10-07 | 2009-10-07 | MANUFACTURE OF THIN LAYERS WITH PHOTOVOLTAIC PROPERTIES, BASED ON TYPE I-III-VI2 ALLOY, BY SUCCESSIVE ELECTRO-DEPOSITS AND THERMAL POST-TREATMENT. |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011042660A2 true WO2011042660A2 (en) | 2011-04-14 |
WO2011042660A3 WO2011042660A3 (en) | 2012-05-31 |
Family
ID=42543220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2010/052105 WO2011042660A2 (en) | 2009-10-07 | 2010-10-06 | Production of thin films having photovoltaic properties and containing a i-iii-vi2-typealloy, comprising successive electrodeposits and thermal post-treatment |
Country Status (6)
Country | Link |
---|---|
US (1) | US8883547B2 (en) |
EP (1) | EP2486603B1 (en) |
JP (1) | JP5583776B2 (en) |
CN (1) | CN102714254B (en) |
FR (1) | FR2951022B1 (en) |
WO (1) | WO2011042660A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8436445B2 (en) * | 2011-08-15 | 2013-05-07 | Stion Corporation | Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices |
CN116827265B (en) * | 2023-08-29 | 2023-12-29 | 通威太阳能(南通)有限公司 | Photovoltaic module stacking and returning deviation rectifying device and method |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4581108A (en) * | 1984-01-06 | 1986-04-08 | Atlantic Richfield Company | Process of forming a compound semiconductive material |
US4611091A (en) * | 1984-12-06 | 1986-09-09 | Atlantic Richfield Company | CuInSe2 thin film solar cell with thin CdS and transparent window layer |
US4638111A (en) * | 1985-06-04 | 1987-01-20 | Atlantic Richfield Company | Thin film solar cell module |
US4798660A (en) * | 1985-07-16 | 1989-01-17 | Atlantic Richfield Company | Method for forming Cu In Se2 films |
US5028274A (en) * | 1989-06-07 | 1991-07-02 | International Solar Electric Technology, Inc. | Group I-III-VI2 semiconductor films for solar cell application |
US5286306A (en) * | 1992-02-07 | 1994-02-15 | Shalini Menezes | Thin film photovoltaic cells from I-III-VI-VII compounds |
DE69304143T2 (en) * | 1992-05-19 | 1997-01-30 | Matsushita Electric Ind Co Ltd | Method of making a chalcopyrite type composition |
US5474939A (en) * | 1992-12-30 | 1995-12-12 | Siemens Solar Industries International | Method of making thin film heterojunction solar cell |
US5477088A (en) * | 1993-05-12 | 1995-12-19 | Rockett; Angus A. | Multi-phase back contacts for CIS solar cells |
JP3249408B2 (en) * | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | Method and apparatus for manufacturing thin film light absorbing layer of thin film solar cell |
US6242080B1 (en) * | 1997-07-09 | 2001-06-05 | Canon Kabushiki Kaisha | Zinc oxide thin film and process for producing the film |
US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
US6258620B1 (en) * | 1997-10-15 | 2001-07-10 | University Of South Florida | Method of manufacturing CIGS photovoltaic devices |
JPH11220151A (en) * | 1998-02-02 | 1999-08-10 | Shinko Electric Ind Co Ltd | Compound semiconductor thin-film photoelectric conversion element |
US6107562A (en) * | 1998-03-24 | 2000-08-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method for manufacturing the same, and solar cell using the same |
US6323417B1 (en) * | 1998-09-29 | 2001-11-27 | Lockheed Martin Corporation | Method of making I-III-VI semiconductor materials for use in photovoltaic cells |
US7842882B2 (en) * | 2004-03-01 | 2010-11-30 | Basol Bulent M | Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth |
US7053294B2 (en) * | 2001-07-13 | 2006-05-30 | Midwest Research Institute | Thin-film solar cell fabricated on a flexible metallic substrate |
FR2839201B1 (en) * | 2002-04-29 | 2005-04-01 | Electricite De France | PROCESS FOR PRODUCING THIN-FILM SEMICONDUCTORS BASED ON COMPOUNDS I-III-VI2 FOR PHOTOVOLTAIC APPLICATIONS |
WO2004032189A2 (en) * | 2002-09-30 | 2004-04-15 | Miasolé | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
FR2849450B1 (en) * | 2002-12-26 | 2005-03-11 | Electricite De France | METHOD FOR REGENERATING AN ELECTROLYSIS BATH FOR MANUFACTURING THIN FILM COMPOUND I-III-VI2 |
FR2849532B1 (en) * | 2002-12-26 | 2005-08-19 | Electricite De France | METHOD FOR MANUFACTURING THIN FILM I-III-VI2 COMPOUND, PROMOTING THE INCORPORATION OF ELEMENTS III |
EP1521308A1 (en) * | 2003-10-02 | 2005-04-06 | Scheuten Glasgroep | Ball or grain-shaped semiconductor element to be used in solar cells and method of production; method of production of a solar cell with said semiconductor element and solar cell |
US7736940B2 (en) * | 2004-03-15 | 2010-06-15 | Solopower, Inc. | Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication |
EP1749309A2 (en) * | 2004-03-15 | 2007-02-07 | Bulent M. Basol | Technique and apparatus for depositing thin layers of semiconductors for solar cell fabricaton |
JP2006049768A (en) * | 2004-08-09 | 2006-02-16 | Showa Shell Sekiyu Kk | Cis compound semiconductor thin film solar battery and manufacturing method for light absorbing layer of solar battery |
JP4131965B2 (en) * | 2004-12-28 | 2008-08-13 | 昭和シェル石油株式会社 | Method for producing light absorption layer of CIS thin film solar cell |
KR100495925B1 (en) * | 2005-01-12 | 2005-06-17 | (주)인솔라텍 | Optical absorber layers for solar cell and manufacturing method thereof |
US20070093006A1 (en) * | 2005-10-24 | 2007-04-26 | Basol Bulent M | Technique For Preparing Precursor Films And Compound Layers For Thin Film Solar Cell Fabrication And Apparatus Corresponding Thereto |
US20070227633A1 (en) * | 2006-04-04 | 2007-10-04 | Basol Bulent M | Composition control for roll-to-roll processed photovoltaic films |
US20100029036A1 (en) * | 2006-06-12 | 2010-02-04 | Robinson Matthew R | Thin-film devices formed from solid group iiia particles |
WO2008013911A1 (en) * | 2006-07-26 | 2008-01-31 | Solopower, Inc. | Technique for doping compound layers used in solar cell fabrication |
US8323735B2 (en) * | 2006-10-13 | 2012-12-04 | Solopower, Inc. | Method and apparatus to form solar cell absorber layers with planar surface |
EP2087151A4 (en) * | 2006-10-19 | 2012-03-28 | Solopower Inc | Roll-to-roll electroplating for photovoltaic film manufacturing |
EP2115783A2 (en) * | 2007-01-31 | 2009-11-11 | Jeroen K.J. Van Duren | Solar cell absorber layer formed from metal ion precursors |
US8197703B2 (en) * | 2007-04-25 | 2012-06-12 | Solopower, Inc. | Method and apparatus for affecting surface composition of CIGS absorbers formed by two-stage process |
CN101355109A (en) * | 2007-07-26 | 2009-01-28 | 鸿富锦精密工业(深圳)有限公司 | Solar battery component and manufacturing equipment thereof |
AU2008297124A1 (en) * | 2007-09-11 | 2009-03-19 | Centrotherm Photovoltaics Ag | Method and arrangement for providing chalcogens |
US8258001B2 (en) * | 2007-10-26 | 2012-09-04 | Solopower, Inc. | Method and apparatus for forming copper indium gallium chalcogenide layers |
US20090235987A1 (en) * | 2008-03-24 | 2009-09-24 | Epv Solar, Inc. | Chemical Treatments to Enhance Photovoltaic Performance of CIGS |
US7842534B2 (en) * | 2008-04-02 | 2010-11-30 | Sunlight Photonics Inc. | Method for forming a compound semi-conductor thin-film |
US8980008B2 (en) * | 2008-04-15 | 2015-03-17 | Hanergy Hi-Tech Power (Hk) Limited | Apparatus and methods for manufacturing thin-film solar cells |
US8394662B1 (en) * | 2008-09-29 | 2013-03-12 | Stion Corporation | Chloride species surface treatment of thin film photovoltaic cell and manufacturing method |
US7960204B2 (en) * | 2008-09-30 | 2011-06-14 | Stion Corporation | Method and structure for adhesion of absorber material for thin film photovoltaic cell |
US7910399B1 (en) * | 2008-09-30 | 2011-03-22 | Stion Corporation | Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates |
US20110018103A1 (en) * | 2008-10-02 | 2011-01-27 | Stion Corporation | System and method for transferring substrates in large scale processing of cigs and/or cis devices |
US8344243B2 (en) * | 2008-11-20 | 2013-01-01 | Stion Corporation | Method and structure for thin film photovoltaic cell using similar material junction |
US7897020B2 (en) * | 2009-04-13 | 2011-03-01 | Miasole | Method for alkali doping of thin film photovoltaic materials |
-
2009
- 2009-10-07 FR FR0956996A patent/FR2951022B1/en not_active Expired - Fee Related
-
2010
- 2010-10-06 CN CN201080056339.3A patent/CN102714254B/en active Active
- 2010-10-06 EP EP10778700.4A patent/EP2486603B1/en active Active
- 2010-10-06 JP JP2012532651A patent/JP5583776B2/en active Active
- 2010-10-06 US US13/500,183 patent/US8883547B2/en active Active
- 2010-10-06 WO PCT/FR2010/052105 patent/WO2011042660A2/en active Application Filing
Non-Patent Citations (1)
Title |
---|
None |
Also Published As
Publication number | Publication date |
---|---|
CN102714254A (en) | 2012-10-03 |
EP2486603B1 (en) | 2018-08-15 |
EP2486603A2 (en) | 2012-08-15 |
US8883547B2 (en) | 2014-11-11 |
CN102714254B (en) | 2015-06-10 |
WO2011042660A3 (en) | 2012-05-31 |
JP5583776B2 (en) | 2014-09-03 |
FR2951022A1 (en) | 2011-04-08 |
JP2013507758A (en) | 2013-03-04 |
FR2951022B1 (en) | 2012-07-27 |
US20120264255A1 (en) | 2012-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1500146B1 (en) | Method for making thin-film semiconductors based on i-iii-vi(2) compounds, for photovoltaic applications | |
CA2610332C (en) | Sulphurisation and selenisation of cigs layers electrolytically deposited by thermal annealing | |
TW201139716A (en) | Chalcogenide-based materials and improved methods of making such materials | |
WO2008049103A2 (en) | Roll-to-roll electroplating for photovoltaic film manufacturing | |
EP2504864A2 (en) | Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same | |
US20090050208A1 (en) | Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer | |
FR2982422A1 (en) | CONDUCTIVE SUBSTRATE FOR PHOTOVOLTAIC CELL | |
Lee et al. | Effect of pre-annealing on the phase formation and efficiency of CZTS solar cell prepared by sulfurization of Zn/(Cu, Sn) precursor with H2S gas | |
EP2666184B1 (en) | Improved interface between a i-iii-vi2 material layer and a molybdenum substrate | |
US20150340524A1 (en) | Method of Fabricating a Flexible Photovoltaic Film Cell With an Iron Diffusion Barrier Layer | |
US8779283B2 (en) | Absorber layer for thin film photovoltaics and a solar cell made therefrom | |
EP2486603B1 (en) | Production of thin films having photovoltaic properties and containing a i-iii-vi2-type alloy, comprising successive electrodeposits and thermal post-treatment | |
TWI460874B (en) | Method for manufacturing a light absorbing layer for a compound semiconductor thin film solar cell, and an In-Cu alloy sputtering target | |
US8846438B2 (en) | Method for indium sputtering and for forming chalcopyrite-based solar cell absorber layers | |
KR101293047B1 (en) | Metallic precursor for a czt-based solar cell and manufacturing method thereof, photo absorption layer and solar cell comprising it | |
WO2014023560A1 (en) | Absorbent cu2znsn(s,se)4 material having a band-separation gradient for thin-film photovoltaic applications | |
KR102420408B1 (en) | P-type compound semiconductor layer manufacturing method for inorganic thin film solar cells and inorganic solar cells including fabricated by the same method | |
KR102513863B1 (en) | Flexible CZTSSe thin film solar cells and manufacturing method thereof | |
US20140246088A1 (en) | Thin films and preparation process thereof | |
Dwyer et al. | Deposition of CuInAlSe 2 films using co-sputtered precursors and selenization | |
WO2011086327A1 (en) | Production of a multi-layer structure for photovoltaic uses with perfected electrolysis conditions |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080056339.3 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10778700 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010778700 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012532651 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 3551/DELNP/2012 Country of ref document: IN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13500183 Country of ref document: US |