WO2011041140A3 - Procédé de remplissage d'une tranchée profonde dans un substrat - Google Patents

Procédé de remplissage d'une tranchée profonde dans un substrat Download PDF

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Publication number
WO2011041140A3
WO2011041140A3 PCT/US2010/049354 US2010049354W WO2011041140A3 WO 2011041140 A3 WO2011041140 A3 WO 2011041140A3 US 2010049354 W US2010049354 W US 2010049354W WO 2011041140 A3 WO2011041140 A3 WO 2011041140A3
Authority
WO
WIPO (PCT)
Prior art keywords
deep trench
substrate
dielectric layer
filling deep
filling
Prior art date
Application number
PCT/US2010/049354
Other languages
English (en)
Other versions
WO2011041140A2 (fr
Inventor
Digvijay Raorane
Khalld M. Sirajuddin
Jon C. Farr
Sharma V. Pamarthy
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2011041140A2 publication Critical patent/WO2011041140A2/fr
Publication of WO2011041140A3 publication Critical patent/WO2011041140A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

L'invention porte sur des procédés de remplissage de tranchées profondes dans des substrats. Un procédé consiste à se procurer un substrat dans lequel est formée une tranchée profonde. Le procédé comprend également la formation d'une couche diélectrique s'adaptant au substrat et à la tranchée profonde. Le procédé comprend également, avec la partie totale de la couche diélectrique s'adaptant à la tranchée profonde exposée, l'élimination d'au moins une partie, mais non de la totalité, de la couche diélectrique à la partie supérieure de la tranchée profonde avec un procédé d'attaque chimique par plasma à relativement faible polarisation.
PCT/US2010/049354 2009-09-30 2010-09-17 Procédé de remplissage d'une tranchée profonde dans un substrat WO2011041140A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US24744709P 2009-09-30 2009-09-30
US61/247,447 2009-09-30
US12/879,924 US20110217832A1 (en) 2009-09-30 2010-09-10 Method of filling a deep trench in a substrate
US12/879,924 2010-09-10

Publications (2)

Publication Number Publication Date
WO2011041140A2 WO2011041140A2 (fr) 2011-04-07
WO2011041140A3 true WO2011041140A3 (fr) 2011-06-16

Family

ID=43826841

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/049354 WO2011041140A2 (fr) 2009-09-30 2010-09-17 Procédé de remplissage d'une tranchée profonde dans un substrat

Country Status (2)

Country Link
US (1) US20110217832A1 (fr)
WO (1) WO2011041140A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8564103B2 (en) * 2009-06-04 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing an electronic device
US8637365B2 (en) 2012-06-06 2014-01-28 International Business Machines Corporation Spacer isolation in deep trench
CN105990310B (zh) * 2015-01-30 2019-04-19 联华电子股份有限公司 半导体结构及其制造方法
US20180323061A1 (en) * 2017-05-03 2018-11-08 Tokyo Electron Limited Self-Aligned Triple Patterning Process Utilizing Organic Spacers
US10740536B2 (en) * 2018-08-06 2020-08-11 International Business Machines Corporation Dynamic survey generation and verification
CN116235283A (zh) 2020-08-18 2023-06-06 应用材料公司 沉积预蚀刻保护层的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020009265A (ko) * 2000-07-25 2002-02-01 박종섭 반도체장치의 플러그 형성방법
US20020058409A1 (en) * 2000-11-16 2002-05-16 Ching-Te Lin Elimination of overhang in liner/barrier/seed layers using post-deposition sputter etch
KR100465601B1 (ko) * 2002-07-18 2005-01-13 주식회사 하이닉스반도체 반도체소자의 형성방법
US20060024966A1 (en) * 2004-07-16 2006-02-02 Sanyo Electric Co., Ltd Manufacturing method of semiconductor device
US20070161203A1 (en) * 2005-12-05 2007-07-12 Semiconductor Manufacturing International (Shanghai) Corporation Method with high gapfill capability and resulting device structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6527968B1 (en) * 2000-03-27 2003-03-04 Applied Materials Inc. Two-stage self-cleaning silicon etch process
US6451705B1 (en) * 2000-08-31 2002-09-17 Micron Technology, Inc. Self-aligned PECVD etch mask
US6624066B2 (en) * 2001-02-14 2003-09-23 Texas Instruments Incorporated Reliable interconnects with low via/contact resistance
US6884736B2 (en) * 2002-10-07 2005-04-26 Taiwan Semiconductor Manufacturing Co, Ltd. Method of forming contact plug on silicide structure
KR20050114784A (ko) * 2004-06-01 2005-12-07 동부아남반도체 주식회사 반도체 소자의 구리배선 형성방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020009265A (ko) * 2000-07-25 2002-02-01 박종섭 반도체장치의 플러그 형성방법
US20020058409A1 (en) * 2000-11-16 2002-05-16 Ching-Te Lin Elimination of overhang in liner/barrier/seed layers using post-deposition sputter etch
KR100465601B1 (ko) * 2002-07-18 2005-01-13 주식회사 하이닉스반도체 반도체소자의 형성방법
US20060024966A1 (en) * 2004-07-16 2006-02-02 Sanyo Electric Co., Ltd Manufacturing method of semiconductor device
US20070161203A1 (en) * 2005-12-05 2007-07-12 Semiconductor Manufacturing International (Shanghai) Corporation Method with high gapfill capability and resulting device structure

Also Published As

Publication number Publication date
WO2011041140A2 (fr) 2011-04-07
US20110217832A1 (en) 2011-09-08

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