WO2011040328A1 - Antenne destinée à générer un plasma à ondes de surface, mécanisme d'introduction de micro-ondes et appareil de traitement au plasma à ondes de surface - Google Patents

Antenne destinée à générer un plasma à ondes de surface, mécanisme d'introduction de micro-ondes et appareil de traitement au plasma à ondes de surface Download PDF

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Publication number
WO2011040328A1
WO2011040328A1 PCT/JP2010/066545 JP2010066545W WO2011040328A1 WO 2011040328 A1 WO2011040328 A1 WO 2011040328A1 JP 2010066545 W JP2010066545 W JP 2010066545W WO 2011040328 A1 WO2011040328 A1 WO 2011040328A1
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Prior art keywords
surface wave
microwave
wave plasma
antenna
waveguide
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PCT/JP2010/066545
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English (en)
Japanese (ja)
Inventor
太郎 池田
繁 河西
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東京エレクトロン株式会社
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Priority to JP2011534218A priority Critical patent/JPWO2011040328A1/ja
Publication of WO2011040328A1 publication Critical patent/WO2011040328A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to a surface wave plasma generating antenna, a microwave introduction mechanism, and a surface wave plasma processing apparatus.
  • Plasma processing is an indispensable technology for the manufacture of semiconductor devices. Recently, the design rules of semiconductor elements constituting LSIs have been increasingly miniaturized due to the demand for higher integration and higher speed of LSIs, and semiconductor wafers Along with this, there is a demand for plasma processing apparatuses that can cope with such miniaturization and enlargement.
  • an RLSA Random Line Slot Slot Antenna microwave plasma processing apparatus that can uniformly form a high density and low electron temperature surface wave plasma has attracted attention (for example, Japanese Patent Application Laid-Open No. 2000-294550).
  • the RLSA microwave plasma processing apparatus is provided with a planar antenna (Radial Slot Antenna) in which a number of slots are formed in a predetermined pattern at the upper part of the chamber, and the microwave guided from the microwave generation source is transmitted to the slot of the planar antenna. And radiates into a chamber held in a vacuum through a microwave transmission plate made of a dielectric material provided below, and generates a surface wave plasma in the chamber by this microwave electric field.
  • An object to be processed such as a semiconductor wafer is processed.
  • an object of the present invention is to provide a surface wave plasma generating antenna that hardly generates a mode jump even if a plasma load changes, a microwave introduction mechanism and a surface wave plasma processing apparatus using the antenna.
  • a microwave transmitted from a microwave output unit that outputs a microwave through a coaxial waveguide composed of an outer conductor and an inner conductor is radiated into the chamber.
  • a surface wave plasma generating antenna for generating surface wave plasma in the chamber the inner member being connected to the inner conductor of the waveguide and the outer side being connected to the outer conductor of the waveguide
  • a surface wave plasma generating antenna comprising a member and a ring-shaped slot formed between the inner member and the outer member.
  • a microwave power source is provided, and a microwave from a microwave output unit that generates and outputs a microwave is introduced into the chamber to generate surface wave plasma in the chamber.
  • a microwave introduction mechanism for causing a coaxial waveguide composed of an outer conductor and an inner conductor to match the impedance of a load provided in the waveguide to the characteristic impedance of the microwave power source.
  • a tuner and a surface wave plasma generating antenna that radiates microwaves transmitted through the waveguide into the chamber, the surface wave plasma generating antenna being connected to the inner conductor of the waveguide.
  • a microwave that generates and outputs a microwave having a chamber that accommodates a substrate to be processed, a gas supply mechanism that supplies gas into the chamber, and a microwave power source.
  • a microwave including an output unit and a microwave introduction mechanism that introduces the output microwave into the chamber, and generates a surface wave plasma of the gas supplied into the chamber by introducing the microwave into the chamber.
  • the microwave introduction mechanism includes a coaxial waveguide composed of an outer conductor and an inner conductor, and a surface for radiating the microwave transmitted through the waveguide into the chamber.
  • the surface wave plasma generating antenna is connected to the inner member connected to the inner conductor of the waveguide and the outer conductor of the waveguide.
  • An outer member which is continued, and an inner member and a ring-shaped formed between the outer member slot, surface wave plasma processing apparatus is provided.
  • FIG. 5 is a cross-sectional view showing a surface wave generating antenna in the microwave introduction mechanism of FIG. 4. It is a top view which shows the antenna which provided one slot which has a seam (edge part). It is a figure which shows the magnetic field vector formed with the antenna of FIG. 6A. It is a top view which shows the antenna which provided four concentric fan-shaped slots.
  • FIG. 5 is a cross-sectional view showing a state in which microwaves of the surface wave plasma generating antenna according to the embodiment of the present invention shown in FIG. 4 are transmitted.
  • FIG. 1 is a cross-sectional view showing a schematic configuration of a surface wave plasma processing apparatus according to a first embodiment of the present invention
  • FIG. 2 shows a configuration of a microwave plasma source used in the surface wave plasma processing apparatus of FIG. FIG.
  • the surface wave plasma processing apparatus 100 is configured as a plasma etching apparatus that performs, for example, an etching process on a wafer.
  • the surface wave plasma processing apparatus 100 includes a substantially cylindrical grounded chamber 1 made of a metal material such as aluminum or stainless steel, which is hermetically configured, and a microwave plasma for forming microwave plasma in the chamber 1.
  • An opening 1 a is formed in the upper part of the chamber 1, and the microwave plasma source 2 is provided so as to face the inside of the chamber 1 from the opening 1 a.
  • a susceptor 11 for horizontally supporting a wafer W which is an object to be processed
  • a cylindrical support member 12 erected at the center of the bottom of the chamber 1 via an insulating member 12a Is provided.
  • Examples of the material constituting the susceptor 11 and the support member 12 include aluminum whose surface is anodized (anodized).
  • the susceptor 11 includes an electrostatic chuck for electrostatically attracting the wafer W, a temperature control mechanism, a gas flow path for supplying heat transfer gas to the back surface of the wafer W, and the wafer. Elevating pins and the like that move up and down to convey W are provided as necessary. Furthermore, a high frequency bias power supply 14 is electrically connected to the susceptor 11 via a matching unit 13. By supplying high frequency power from the high frequency bias power source 14 to the susceptor 11, ions in the plasma are attracted to the wafer W side.
  • An exhaust pipe 15 is connected to the bottom of the chamber 1, and an exhaust device 16 including a vacuum pump is connected to the exhaust pipe 15. Then, by operating the exhaust device 16, the inside of the chamber 1 is exhausted, and the inside of the chamber 1 can be decompressed at a high speed to a predetermined degree of vacuum. Further, on the side wall of the chamber 1, a loading / unloading port 17 for loading / unloading the wafer W and a gate valve 18 for opening / closing the loading / unloading port 17 are provided.
  • a shower plate 20 that discharges a processing gas for plasma etching toward the wafer W is provided horizontally.
  • the shower plate 20 has a gas flow path 21 formed in a lattice shape and a large number of gas discharge holes 22 formed in the gas flow path 21. It is a space part 23.
  • a pipe 24 extending outside the chamber 1 is connected to the gas flow path 21 of the shower plate 20, and a processing gas supply source 25 is connected to the pipe 24.
  • a ring-shaped plasma gas introduction member 26 is provided along the chamber wall above the shower plate 20 of the chamber 1, and the plasma gas introduction member 26 has a number of gas discharge holes on the inner periphery. Is provided.
  • a plasma gas supply source 27 for supplying plasma gas is connected to the plasma gas introduction member 26 via a pipe 28.
  • the plasma gas a rare gas such as Ar gas is preferably used.
  • the plasma gas introduced into the chamber 1 from the plasma gas introduction member 26 is turned into plasma by the microwave introduced into the chamber 1 from the microwave plasma source 2, and this plasma passes through the space 23 of the shower plate 20.
  • the processing gas discharged from the gas discharge hole 22 of the shower plate 20 is excited to form plasma of the processing gas.
  • the microwave plasma source 2 is supported by a support ring 29 provided at the upper part of the chamber 1, and the space between them is hermetically sealed. As shown in FIG. 2, the microwave plasma source 2 includes a microwave output unit 30 that outputs the microwaves distributed to a plurality of paths, and a microwave output from the microwave output unit 30 is guided to the chamber 1. 1 has an antenna unit 40 for radiation.
  • the microwave output unit 30 includes a microwave power source 31, a microwave oscillator 32, an amplifier 33 that amplifies the oscillated microwave, and a distributor 34 that distributes the amplified microwave into a plurality of parts. .
  • the microwave oscillator 32 causes, for example, a PLL oscillation of a microwave having a predetermined frequency.
  • the distributor 34 distributes the microwave amplified by the amplifier 33 while matching the impedance between the input side and the output side so that the loss of the microwave does not occur as much as possible.
  • the microwave frequency can be 2.45 GHz, 8.35 GHz, 5.8 GHz, 1.98 GHz, or the like. When a larger power is applied, the frequency is 700 MHz to 1 GHz such as 915 MHz or 860 MHz. Ranges can be used.
  • the antenna unit 40 has a plurality of antenna modules 41 that guide the microwaves distributed by the distributor 34.
  • Each antenna module 41 includes an amplifier unit 42 that mainly amplifies the distributed microwave and a microwave introduction mechanism 43.
  • the microwave introduction mechanism 43 includes a coaxial waveguide 50 that transmits microwaves, and an antenna 45 for generating surface wave plasma that radiates the microwaves transmitted through the waveguide 50 into the chamber 1.
  • the waveguide 50 is provided with a tuner 44 that matches the impedance of the load (plasma) in the chamber with the characteristic impedance of the microwave power source, as will be described later (see FIG. 4).
  • the microwaves radiated from the antenna 45 into the chamber 1 are combined in the space in the chamber 1, and surface wave plasma is formed in the chamber 1.
  • the amplifier unit 42 includes a phase shifter 46, a variable gain amplifier 47, a main amplifier 48 constituting a solid state amplifier, and an isolator 49.
  • the phase shifter 46 is configured such that the phase of the microwave can be changed by the slag tuner, and the radiation characteristic can be modulated by adjusting this. For example, by adjusting the phase for each antenna module, the directivity is controlled to change the plasma distribution, and the circular polarization is obtained by shifting the phase by 90 ° between adjacent antenna modules as will be described later. be able to. However, the phase shifter 46 does not need to be provided when such modulation of the radiation characteristic is unnecessary.
  • the variable gain amplifier 47 is an amplifier for adjusting the power level of the microwave input to the main amplifier 48, adjusting the variation of individual antenna modules, or adjusting the plasma intensity. By changing the variable gain amplifier 47 for each antenna module, the generated plasma can be distributed.
  • the main amplifier 48 constituting the solid-state amplifier has an input matching circuit 61, a semiconductor amplifying element 62, an output matching circuit 63, and a high Q resonance circuit 64.
  • the semiconductor amplifying element 62 GaAs HEMT, GaN HEMT, and LD (Laterally Diffused) -MOS capable of class E operation can be used.
  • the variable gain amplifier 47 has a constant value, the power supply voltage of the class E operation amplifier is variable, and power control is performed.
  • the isolator 49 separates the reflected microwaves reflected by the antenna 45 and directed to the main amplifier 48, and includes a circulator and a dummy load (coaxial terminator).
  • the circulator guides the microwave reflected by the antenna 45 to the dummy load, and the dummy load converts the reflected microwave guided by the circulator into heat.
  • a plurality of antenna modules 41 are provided, and the microwaves introduced into the chamber 1 from the microwave introduction mechanism 43 of each antenna module are spatially synthesized. Adjacent to each other can be provided.
  • the microwave introduction mechanism 43 will be described in detail with reference to FIG. 4 and FIG. 4 is a longitudinal sectional view of the microwave introduction mechanism 43, and FIG. 5 is a transverse sectional view of the antenna 45 of the microwave introduction mechanism 43.
  • the microwave introduction mechanism 43 has a coaxial waveguide 50 including a cylindrical outer conductor 51 and a rod-shaped inner conductor 52 provided at the center thereof.
  • An antenna 45 is provided at the tip.
  • the inner conductor 52 is on the power supply side
  • the outer conductor 51 is on the ground side.
  • the tuner 44 provided in the waveguide 50 has two slags 53 and constitutes a slag tuner.
  • the slug 53 is configured as a plate-like body made of a dielectric, and is provided in an annular shape between the inner conductor 52 and the outer conductor 51 of the waveguide 50.
  • the impedance is adjusted by moving the slugs 53 up and down by the actuator 59 based on a command from the controller 60.
  • the controller 60 performs impedance adjustment so that the termination is, for example, 50 ⁇ .
  • the antenna 45 includes an inner member 54 that is continuous with the inner conductor 52 of the waveguide 50 and an outer member 55 that is continuous with the outer conductor 51, and a ring-like shape is provided between the inner member 54 and the outer member 55.
  • a slot 56 is formed.
  • the antenna main body 80 is configured by the inner member 54 and the slot 56.
  • the inner member 54 has a disk shape having a diameter larger than that of the outer conductor 51.
  • the outer member 55 includes a flange portion 55a extending outward from the end portion of the outer conductor 51 and a cylindrical portion 55b extending in the microwave radiation direction from the outer periphery of the flange portion 55a.
  • the flange portion 55a and the inner member 54 are provided so as to partially overlap with the microwave transmission direction.
  • the antenna 45 has a slow wave material 57 provided on the upper surface of the antenna main body 80 composed of the inner member 54 and the slot 56.
  • the slow wave material 57 has a dielectric constant larger than that of vacuum, and is made of, for example, fluorine resin or polyimide resin such as quartz, ceramics, polytetrafluoroethylene, and the like. It has a function of adjusting the plasma by shortening its wavelength.
  • the slow wave material 57 can adjust the phase of the microwave depending on the thickness thereof, and the thickness thereof is adjusted so that the antenna main body 80 composed of the inner member 54 and the slot 56 becomes a “wave” of standing waves. adjust. Thereby, reflection can be minimized and radiation energy from the antenna 45 can be maximized.
  • a dielectric member for vacuum sealing for example, a microwave transmitting member 58 made of quartz or ceramics is disposed on the lower surface of the antenna main body 80 formed by the inner member 54 and the slot 56.
  • the microwave transmitting member 58 also functions as a slow wave material.
  • the microwave amplified by the main amplifier 48 is guided to the antenna 45 through the outer conductor 51 and the inner conductor 52, and the microwave is transmitted from the ring-shaped slot 56 between the inner member 54 and the outer member 55.
  • the light passes through the transmission member 58 and is radiated to the space in the chamber 1.
  • the slot 56 has a ring shape, there is no end portion in the slot, and a single surface wave mode is easily generated regardless of the magnitude of the plasma load.
  • a TM01 mode single mode in which surface wave plasma is easily formed can be obtained regardless of the plasma load and the microwave frequency.
  • a feed conversion unit (not shown) is attached to the proximal end side of the waveguide 50.
  • the feed conversion unit is connected to the main amplifier 48 via a coaxial cable, and an isolator 49 is interposed in the middle of the coaxial cable.
  • the main amplifier 48 is a power amplifier and handles high power, it operates with high efficiency such as class E, but its heat is equivalent to tens to hundreds of watts, so it is attached in series to the antenna 45 from the viewpoint of heat dissipation. .
  • Each component in the surface wave plasma processing apparatus 100 is controlled by a control unit 70 including a microprocessor.
  • the control unit 70 stores a process recipe in which a control program (software), processing condition data, and the like are recorded in order to implement various processes executed by the surface wave plasma processing apparatus 100 under the control of the control unit 70.
  • a control program software
  • processing condition data and the like are recorded in order to implement various processes executed by the surface wave plasma processing apparatus 100 under the control of the control unit 70.
  • an input means, a display, and the like are provided, and the plasma processing apparatus is controlled according to the selected recipe.
  • the wafer W is loaded into the chamber 1 and placed on the susceptor 11. Then, while introducing a plasma gas, for example, Ar gas, into the chamber 1 from the plasma gas supply source 27 through the pipe 28 and the plasma gas introduction member 26, a microwave is introduced into the chamber 1 from the microwave plasma source 2. A plasma is formed.
  • a plasma gas for example, Ar gas
  • a processing gas for example, an etching gas such as Cl 2 gas is discharged from the processing gas supply source 25 into the chamber 1 through the pipe 24 and the shower plate 20.
  • the discharged processing gas is excited by the plasma that has passed through the space 23 of the shower plate 20 to be converted into plasma, and the wafer W is subjected to plasma processing, for example, etching processing by the plasma of the processing gas thus formed.
  • the microwave oscillated from the microwave oscillator 32 of the microwave output unit 30 is amplified by the amplifier 33 and then distributed to a plurality of parts by the distributor 34.
  • the microwaves distributed in this way are individually amplified by the main amplifier 48 constituting the solid state amplifier, and individually from the antenna 45 through the waveguide 50 of the microwave introduction mechanism 43. After radiating and introducing into the chamber 1, they are combined in space.
  • An antenna 45 for generating surface wave plasma by emitting microwaves includes an inner member 54 connected to the inner conductor 52 of the waveguide 50 and an outer member 55 connected to the outer conductor 51 of the waveguide 50. Since the ring-shaped slot 56 is formed between them, there is no slot end (seam) as in the prior art. For this reason, the generation of a strong electric field at the end (joint) of the slot, which has been generated conventionally, is suppressed, and the occurrence of mode jump can be suppressed.
  • an antenna plate having a plurality of slots is used.
  • a strong electric field may be generated at the end of the slot.
  • TE mode occurs.
  • a feature of the TE mode is that it has a magnetic field component in the wave traveling direction.
  • a magnetic field vector is formed as shown in FIG. 6B, and four concentric fans as shown in FIG. 7A are formed.
  • the slot 82 having the shape is provided, a magnetic field vector is formed as shown in FIG. 7B, and both have a vertical component in the magnetic field vector and have a magnetic field in the electric field traveling direction. I understand.
  • the surface wave TM mode is generated regardless of the shape of the slot.
  • both the TE mode and the TM mode are generated. That is, a mode jump occurs due to a change in plasma load.
  • the surface wave mode is different, the absorption efficiency with respect to the supply power of the plasma changes, so that the plasma density is also different for the same power. This means that the plasma density does not change continuously with respect to power or the like. For this reason, the condition range in which the process can be used is narrowed, and it becomes difficult to control the plasma.
  • the antenna 45 formed with the ring-shaped slot 56 of this embodiment does not have a slot end (seam), and does not generate a strong electric field at the slot end. Therefore, a TM mode (TM01 mode) capable of forming a stable surface wave plasma without any magnetic field component in the traveling direction of the electric field is consistently generated regardless of the plasma load impedance level, and a single mode surface wave plasma is generated. Can be generated.
  • the magnetic field vector when the antenna having the ring-shaped slot of the present embodiment is used and the plasma load impedance is large is shown in the perspective view of FIG. 8A and the side view of FIG. 8B. There is no magnetic field vector in the traveling direction (vertical direction), and all are in-plane directions (lateral directions). This indicates that only the TM mode has occurred.
  • a configuration having an inner member connected to the inner conductor of the waveguide, an outer member connected to the outer conductor of the waveguide, and a ring-shaped slot formed between the inner member and the outer member Therefore, there is no slot end (seam), and no strong electric field is generated at the slot end. Therefore, a TM mode (TM01 mode) capable of forming a stable surface wave plasma without any magnetic field component in the traveling direction of the electric field is consistently generated regardless of the plasma load impedance level, and a single mode surface wave plasma is generated. Can be generated. For this reason, even if the plasma load changes, the occurrence of mode jump is suppressed.
  • a simple monopole-like structure having an inner member 54 and an outer member 55 'in which the outer conductor 51 is simply extended.
  • Even an antenna can generate single-mode surface wave plasma consisting of TM mode.
  • the frequency of the microwave is relatively high at 2.45 GHz, it is easy to obtain single mode surface wave plasma composed of TM mode.
  • the TE impedance in the waveguide 50 is maintained as it is, unlike the case where the antenna impedance is a frequency of 2.45 GHz.
  • the microwave radiated from TE becomes a TE wave.
  • the flange portion 55 a is used as the outer member 55 of the antenna 45 from the viewpoint of reliably obtaining the single mode surface wave plasma composed of the TM mode even when the frequency is lowered to about 900 MHz.
  • the flange portion 55a and the inner member 54 partially overlap each other in the microwave transmission direction. Thereby, in the flange portion 55a, the electric field is always directed in the electric field transmission direction (vertical direction), and the electric field radiated from the antenna 45 becomes the electric field transmission direction (vertical direction), so that the direction of the magnetic field is surely in-plane.
  • a TM mode that is only directional is formed.
  • the microwaves distributed in plural are individually amplified by the main amplifier 48 constituting the solid-state amplifier, and individually radiated from the antenna 45 through the waveguide 50 of the microwave introduction mechanism 43. Since these are synthesized in space after being introduced into the chamber 1, a large isolator or synthesizer becomes unnecessary.
  • the microwave introduction mechanism 43 is compact because the antenna 45 and the tuner 44 are integrally provided.
  • FIG. 11 is a cross-sectional view showing a microwave introduction mechanism in the surface wave plasma processing apparatus according to the second embodiment of the present invention.
  • an impedance conversion member 90 made of a dielectric is interposed between the slag 53 on the antenna 45 side of the tuner 44 and the antenna 45.
  • the impedance conversion member 90 is fixedly provided so as to fill a space between the inner conductor 52 and the outer conductor 51.
  • the impedance conversion member 90 is formed in a circular tube shape.
  • a dielectric constituting the impedance conversion member 90 alumina having a high dielectric constant is preferable.
  • silicon nitride or the like can also be used.
  • the tuner apparently matches the impedance of the plasma load in the chamber 1 with the characteristic impedance of the microwave power source by using two slugs.
  • the movable range of the slag In order to perform such impedance matching, the movable range of the slag must be at least (3/4) ⁇ ⁇ g ( ⁇ g is the wavelength of the microwave), and if the movable range of the slag 53 is smaller than that, the matching range becomes narrower. It becomes difficult to perform sufficient impedance matching.
  • the slag stroke required for impedance matching becomes long.
  • the length of (3/4) ⁇ ⁇ g which is a necessary movable range at 860 MHz is As a result, the required length of the tuner becomes larger than the allowable length. This makes it difficult to design a device that can perform sufficient impedance matching.
  • an impedance conversion member 90 made of a dielectric is provided between the slag 53 on the antenna 45 side and the antenna 45. Since the impedance conversion member 90 is a dielectric, the characteristic impedance Z1 can be made larger than the impedance Z of the plasma load by taking an appropriate shape. In particular, when a dielectric having a high dielectric constant such as alumina is used, the characteristic impedance Z1 becomes sufficiently larger than the impedance Z of the plasma load by taking an appropriate shape. As a result, the apparent impedance of the antenna 45 increases, and apparently the fluctuation of the plasma load decreases.
  • the impedance conversion member 90 interposing the impedance conversion member 90 between the slag 53 on the antenna 45 side and the antenna 45, the fluctuation of the plasma load seen from the tuner 44 is apparently reduced, and as a result, the required matching range is reduced. be able to. Therefore, a necessary matching range can be obtained with the length of the tuner 44 within the allowable range.
  • the arrangement position of the impedance conversion member 90 is preferably a position in contact with the antenna 45 (in this embodiment, the slow wave material 57 of the antenna 45) in order to prevent a decrease in impedance. Thereby, impedance conversion becomes easy.
  • FIG. 12 is a diagram schematically showing a difference in matching range depending on the presence or absence of an impedance conversion member.
  • the horizontal axis of FIG. 12 is the plasma dielectric constant ( ⁇ r), and the vertical axis is the plasma dielectric loss (tan ⁇ ). These represent the state of the plasma.
  • the dielectric constant ( ⁇ r) of the plasma is a parameter related to the density of the plasma and the pressure of the space where the plasma is generated, and the dielectric loss (tan ⁇ ) of the plasma is generated by the plasma. It is a parameter related to the pressure of the space to be measured.
  • FIG. 12 shows these as a matrix, and the conditions under which matching is achieved and reflection is zero are indicated by diagonal lines. As shown in this figure, when the impedance conversion member 90 is not present, the matching range is narrow, whereas when the impedance conversion member 90 is provided, the matching range is significantly widened. It is confirmed.
  • the antenna 45 having a ring-shaped slot formed between the inner member and the outer member of the waveguide is used as an antenna.
  • a slot having a slot end as shown in FIGS. 6A and 7A is also applicable.
  • FIG. 13 is a cross-sectional view showing a microwave introduction mechanism in a surface wave plasma processing apparatus according to the third embodiment of the present invention
  • FIG. 14 is a cross-sectional view showing a power supply mechanism of the microwave introduction mechanism.
  • the method for driving the slag of the tuner is different from those in the first and second embodiments.
  • the microwave introduction mechanism 43 ′ has a coaxial waveguide 150 that transmits a microwave, and an antenna 45 that radiates the microwave transmitted through the waveguide 150 into the chamber 1 and has the same structure as that of the first embodiment. And have. Then, the microwaves radiated into the chamber 1 from the microwave introduction mechanism 43 ′ are synthesized in the space in the chamber 1, and surface wave plasma is formed in the chamber 1.
  • the waveguide 150 is configured by coaxially arranging a cylindrical outer conductor 152 and a rod-shaped inner conductor 153 provided at the center thereof, and an antenna 45 is provided at the tip of the waveguide 150.
  • the inner conductor 153 is on the power supply side
  • the outer conductor 152 is on the ground side.
  • the upper end of the outer conductor 152 and the inner conductor 153 is a reflecting plate 158.
  • a power feeding mechanism 154 that feeds microwaves (electromagnetic waves) is provided on the proximal end side of the waveguide 150.
  • the power feeding mechanism 154 has a microwave power introduction port 155 for introducing microwave power provided on the side surface of the waveguide 150 (outer conductor 152).
  • a coaxial line 156 including an inner conductor 156a and an outer conductor 156b is connected to the microwave power introduction port 155 as a power supply line for supplying the microwave amplified from the amplifier unit 42.
  • a feeding antenna 190 that extends horizontally toward the inside of the outer conductor 152 is connected to the tip of the inner conductor 156 a of the coaxial line 156.
  • the feeding antenna 190 is formed as a microstrip line on a PCB substrate which is a printed circuit board, for example.
  • a slow wave material 159 made of a dielectric material such as Teflon (registered trademark) for shortening the effective wavelength of the reflected wave is provided between the reflector 158 and the feeding antenna 190. Note that when a microwave with a high frequency such as 2.45 G is used, the retardation member 159 may not be provided. At this time, the electromagnetic wave radiated from the feeding antenna 190 is reflected by the reflecting plate 158, so that the maximum electromagnetic wave is transmitted into the waveguide 150 having the coaxial structure.
  • the feeding antenna 190 is connected to the inner conductor 156a of the coaxial line 156 at the microwave power introduction port 155, and the first pole 192 to which the electromagnetic wave is supplied and the second electromagnetic wave radiating the supplied electromagnetic wave.
  • the antenna main body 191 having the pole 193 and the reflecting portion 194 extending from both sides of the antenna main body 191 along the outer side of the inner conductor 153 and forming a ring shape, and the electromagnetic wave incident on the antenna main body 191 and the reflecting portion A standing wave is formed with the electromagnetic wave reflected at 194.
  • the second pole 193 of the antenna body 191 is in contact with the inner conductor 153.
  • the feeding antenna 190 radiates microwaves (electromagnetic waves), and thereby microwave power is fed to the space between the outer conductor 152 and the inner conductor 153. Then, the microwave power supplied to the power feeding mechanism 154 propagates toward the antenna 45.
  • the waveguide 150 is provided with a tuner 144.
  • the tuner 144 matches the impedance of the plasma load in the chamber 1 with the characteristic impedance of the microwave power source, and includes two slugs 161a and 161b that move up and down between the outer conductor 152 and the inner conductor 153, and a reflection And a slag driving unit 170 provided on the outer side (upper side) of the plate 158.
  • the slag 161a is provided on the slag drive unit 170 side, and the slag 161b is provided on the antenna 45 side.
  • two slag moving shafts 164a and 164b for moving slag are provided along a longitudinal direction of the inner conductor 153.
  • the slag moving shafts 164a and 164b are provided.
  • the slag 161a is made of a dielectric material and has an annular shape as shown in FIG. 15, and a sliding member 163 made of a resin having slipperiness is fitted inside the slag 161a.
  • the sliding member 163 is provided with a screw hole 165a into which the slag moving shaft 164a is screwed and a through hole 165b into which the slag moving shaft 164b is inserted.
  • the slag 161b has a screw hole 165a and a through hole 165b as in the case of the slag 161a.
  • the screw hole 165a is screwed to the slag moving shaft 164b and is inserted into the through hole 165b.
  • the slag moving shaft 164a is inserted. Accordingly, the slag 161a is moved up and down by rotating the slag movement shaft 164a, and the slag 161b is moved up and down by rotating the slag movement shaft 164b. That is, the slugs 161a and 161b are moved up and down by a screw mechanism composed of the slug moving shafts 164a and 164b and the sliding member 163.
  • the inner conductor 153 has three slits 153a formed at equal intervals along the longitudinal direction.
  • the sliding member 163 is provided with three protruding portions 163a at equal intervals so as to correspond to the slits 153a. Then, the sliding member 163 is fitted into the slags 161a and 161b in a state where the protruding portions 163a are in contact with the inner circumferences of the slags 161a and 161b.
  • the outer peripheral surface of the sliding member 163 comes into contact with the inner peripheral surface of the inner conductor 153 without play, and the sliding member 163 slides up and down the inner conductor 153 by rotating the slug movement shafts 164a and 164b.
  • the inner peripheral surface of the inner conductor 153 functions as a sliding guide for the slugs 161a and 161b.
  • the width of the slit 153a is preferably 5 mm or less.
  • a resin having good sliding property and relatively easy processing for example, polyphenylene sulfide (PPS) resin (trade name: BEAREE AS5000 (manufactured by NTN Corporation)) is suitable. Can be cited as a thing.
  • PPS polyphenylene sulfide
  • the slag moving shafts 164a and 164b extend through the reflecting plate 158 to the slag driving unit 170.
  • a bearing (not shown) is provided between the slug movement shafts 164a and 164b and the reflection plate 158.
  • a bearing portion 167 made of a conductor is provided at the lower end of the inner conductor 153, and the lower ends of the slug movement shafts 164 a and 164 b are pivotally supported by the bearing portion 167.
  • the slag driving unit 170 has a housing 171, slag moving shafts 164 a and 164 b extend into the housing 171, and gears 172 a and 172 b are attached to upper ends of the slag moving shafts 164 a and 164 b, respectively.
  • the slag driving unit 170 is provided with a motor 173a that rotates the slag moving shaft 164a and a motor 173b that rotates the slag moving shaft 164b.
  • a gear 174a is attached to the shaft of the motor 173a, and a gear 174b is attached to the shaft of the motor 173b.
  • the gear 174a meshes with the gear 172a, and the gear 174b meshes with the gear 172b.
  • the slag movement shaft 164a is rotated by the motor 173a via the gears 174a and 172a
  • the slag movement shaft 164b is rotated by the motor 173b via the gears 174b and 172b.
  • the motors 173a and 173b are, for example, stepping motors.
  • the slag moving shaft 164b is longer than the slag moving shaft 164a and reaches the upper side. Therefore, the positions of the gears 172a and 172b are vertically offset, and the motors 173a and 173b are also vertically offset. Thereby, the space of the power transmission mechanism such as the motor and the gear can be reduced, and the casing 171 that accommodates them can have the same diameter as the outer conductor 152.
  • increment type encoders 175a and 175b for detecting the positions of the slugs 161a and 161b are provided so as to be directly connected to these output shafts.
  • the absolute position is determined by the following procedure. First, the slag moving shaft 164a is slowly rotated to move the slag 161a at a constant speed while looking at the counter of the encoder 175a. When the slag 161a reaches a mechanical stop (not shown), the motor 173a steps out and stops.
  • Stopping can be detected by the fact that the count of the encoder 175a does not change, and the position of the slag 161a at that time, or a position offset from that by a predetermined pulse is used as the origin.
  • the absolute position of the slag 161a can be detected by counting the number of pulses from the origin with this origin position as a reference.
  • the slag 161b can detect the absolute position by grasping the origin.
  • the positions of the slags 161a and 161b are controlled by the slag controller 168.
  • the slag controller 168 controls the motors 173a and 173b based on the impedance value of the input terminal detected by an impedance detector (not shown) and the positional information of the slags 161a and 161b detected by the encoders 175a and 175b.
  • the impedance is adjusted by sending a signal and controlling the positions of the slugs 161a and 161b.
  • the slug controller 168 performs impedance matching so that the termination is, for example, 50 ⁇ . When only one of the two slugs is moved, a trajectory passing through the origin of the Smith chart is drawn, and when both are moved simultaneously, only the phase rotates.
  • the microwave power oscillated from the microwave oscillator 32 of the microwave output unit 30 is amplified by the amplifier 33 and then distributed to a plurality by the distributor 34.
  • the distributed microwave power is guided to the antenna unit 40.
  • the microwave power distributed in plural is individually amplified by the main amplifier 48 constituting the solid state amplifier, and is supplied to the waveguide 150 of the microwave introduction mechanism 43 ′.
  • the impedance is automatically matched and radiated into the chamber 1 via the antenna 45 in a state where there is substantially no power reflection, and is spatially synthesized.
  • the microwave (electromagnetic wave) propagating from the coaxial line 156 reaches the first pole 192 of the feeding antenna 190 at the microwave power introduction port 155, the microwave (electromagnetic wave) is propagated along the antenna body 191. Propagating and radiating microwaves (electromagnetic waves) from the second pole 193 at the tip of the antenna body 191.
  • the microwave (electromagnetic wave) propagating through the antenna body 191 is reflected by the reflecting portion 194 and is combined with the incident wave to generate a standing wave.
  • a standing wave is generated at the position where the feed antenna 190 is disposed, an induced magnetic field is generated along the outer wall of the inner conductor 153 and is induced thereby to generate an induced electric field. Due to these chain actions, microwaves (electromagnetic waves) propagate in the waveguide 150 and are guided to the antenna 45.
  • microwave (electromagnetic wave) power can be supplied efficiently and uniformly.
  • the maximum microwave (electromagnetic wave) power can be transmitted to the waveguide 150 having the coaxial structure by reflecting the microwave (electromagnetic wave) radiated from the feeding antenna 190 by the reflection plate 158.
  • the slag moving shafts 164a and 164b corresponding to the drive transmission unit, the drive guide unit, and the holding unit, and the sliding member 163 are provided inside the inner conductor 153, so that these are provided outside the outer conductor 152.
  • the weight and moment of the mechanical element can be reduced, and it is not necessary to provide a slit for moving the holding mechanism on the outer conductor 152, and a shield mechanism for preventing leakage of electromagnetic waves is not necessary.
  • the drive mechanism of slag 161a, 161b can be reduced in size compared with the past.
  • a sliding member 163 made of a resin having slipperiness is attached to the slags 161a and 161b themselves, and a screw mechanism is formed by screwing the slag moving shaft 164a or 164b into the screw hole 165a of the sliding member 163 to form a motor 173a.
  • 173b rotate the slag moving shafts 164a, 164b so that the outer periphery of the sliding member 163 is guided to slide along the inner periphery of the inner conductor 153, and the slags 161a, 161b move.
  • the sliding member 163 and the slug movement shafts 164a and 164b have the three functions of the drive transmission mechanism, the drive guide mechanism, and the holding mechanism, and the drive mechanism can be remarkably reduced in size.
  • the tuner drive mechanism can be reduced in size, so that the tuner 144 itself can be significantly reduced in size.
  • the through hole 165b is provided in the sliding member 163, and the slag moving shaft that is not screwed into the screw hole 165a is passed through the through hole 165b, the slugs 161a and 161b are driven in the inner conductor 153, respectively.
  • the two slug moving shafts 164a and 164b can be provided, and the two slugs 161a and 161b can be independently moved by the screw mechanism.
  • the motors 173a and 173b and the gears 172a and 172b which are power transmission mechanisms, are offset vertically, so that the space for the power transmission mechanism such as the motor and gears can be reduced.
  • the casing 171 that accommodates them can have the same diameter as the outer conductor 152. Therefore, the tuner 144 can be made even more compact.
  • incremental encoders 175a and 175b are provided so as to be directly connected to the output shafts of the motors 173a and 173b and the positions of the slugs 161a and 161b are detected, a conventionally used sensor for position detection becomes unnecessary. It is inexpensive because there is no need to use an expensive absolute encoder.
  • the present invention is not limited to the above-described embodiment, and various modifications can be made within the scope of the idea of the present invention.
  • the circuit configuration of the microwave output unit 30 and the circuit configurations of the antenna unit 40 and the main amplifier 48 are not limited to the above embodiment. Specifically, when it is not necessary to control the directivity of the microwave radiated from the antenna or to make it circularly polarized, the phase shifter is unnecessary.
  • the antenna unit 40 does not necessarily need to be composed of a plurality of antenna modules 41, and one antenna module is sufficient when a small plasma source such as remote plasma is sufficient.
  • the etching processing apparatus is exemplified as the plasma processing apparatus.
  • the present invention is not limited to this and can be used for other plasma processing such as film formation processing, oxynitride film processing, and ashing processing.
  • the substrate to be processed is not limited to the semiconductor wafer W, and may be another substrate such as an FPD (flat panel display) substrate typified by an LCD (liquid crystal display) substrate or a ceramic substrate.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne une antenne (45) destinée à générer un plasma à onde de surface afin de délivrer un plasma à ondes de surface dans une chambre en envoyant des micro-ondes adressées par une section de sortie de micro-ondes par l'intermédiaire d'un guide d'ondes coaxial (50) composé d'un conducteur extérieur (51) et d'un conducteur intérieur (52). L'antenne comprend : un élément intérieur (54) connecté au conducteur intérieur (52) du guide d'ondes (50), un élément extérieur (55) connecté au conducteur extérieur (51) du guide d'ondes (50), et une fente de forme annulaire (56) formée entre l'élément intérieur (54) et l'élément extérieur (55).
PCT/JP2010/066545 2009-09-29 2010-09-24 Antenne destinée à générer un plasma à ondes de surface, mécanisme d'introduction de micro-ondes et appareil de traitement au plasma à ondes de surface WO2011040328A1 (fr)

Priority Applications (1)

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JP2011534218A JPWO2011040328A1 (ja) 2009-09-29 2010-09-24 表面波プラズマ発生用アンテナ、マイクロ波導入機構、および表面波プラズマ処理装置

Applications Claiming Priority (2)

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JP2009-224451 2009-09-29
JP2009224451 2009-09-29

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WO2011040328A1 true WO2011040328A1 (fr) 2011-04-07

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CN102882004A (zh) * 2012-06-29 2013-01-16 华为技术有限公司 一种电磁耦极子天线
CN103091872A (zh) * 2012-12-26 2013-05-08 西安邮电学院 基于铌酸锂长程表面等离子体波波导和微带天线的微波光波转换器
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JP2015118739A (ja) * 2013-12-16 2015-06-25 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
JP2018101587A (ja) * 2016-12-21 2018-06-28 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及びマイクロ波導入機構
WO2020203406A1 (fr) * 2019-04-03 2020-10-08 東京エレクトロン株式会社 Procédé et dispositif de traitement au plasma
WO2022059533A1 (fr) * 2020-09-18 2022-03-24 東京エレクトロン株式会社 Syntoniseur et procédé d'adaptation d'impédance
JP7432673B2 (ja) 2021-09-08 2024-02-16 セメス カンパニー，リミテッド 基板処理装置及び基板処理方法

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CN102882004A (zh) * 2012-06-29 2013-01-16 华为技术有限公司 一种电磁耦极子天线
CN102882004B (zh) * 2012-06-29 2016-08-03 华为技术有限公司 一种电磁耦极子天线
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CN103091872A (zh) * 2012-12-26 2013-05-08 西安邮电学院 基于铌酸锂长程表面等离子体波波导和微带天线的微波光波转换器
CN103091871A (zh) * 2012-12-26 2013-05-08 西安邮电学院 基于铌酸锂长程表面等离子体波波导和多频带微带天线的微波光波转换器
CN103091872B (zh) * 2012-12-26 2015-06-10 西安邮电学院 基于铌酸锂长程表面等离子体波波导和微带天线的微波光波转换器
CN103091871B (zh) * 2012-12-26 2015-06-10 西安邮电学院 基于铌酸锂长程表面等离子体波波导和多频带微带天线的微波光波转换器
JP2015118739A (ja) * 2013-12-16 2015-06-25 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
JP2018101587A (ja) * 2016-12-21 2018-06-28 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及びマイクロ波導入機構
WO2020203406A1 (fr) * 2019-04-03 2020-10-08 東京エレクトロン株式会社 Procédé et dispositif de traitement au plasma
JP2020170643A (ja) * 2019-04-03 2020-10-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR20210141671A (ko) * 2019-04-03 2021-11-23 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치
US20220199369A1 (en) * 2019-04-03 2022-06-23 Tokyo Electron Limited Plasma processing method and plasma processing device
JP7221115B2 (ja) 2019-04-03 2023-02-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102614242B1 (ko) * 2019-04-03 2023-12-14 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치
WO2022059533A1 (fr) * 2020-09-18 2022-03-24 東京エレクトロン株式会社 Syntoniseur et procédé d'adaptation d'impédance
JP7496746B2 (ja) 2020-09-18 2024-06-07 東京エレクトロン株式会社 チューナおよびインピーダンス整合方法
JP7432673B2 (ja) 2021-09-08 2024-02-16 セメス カンパニー，リミテッド 基板処理装置及び基板処理方法

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