WO2011035848A3 - Verfahren zur herstellung einer solarzelle oder eines transistors mit einer kristallinen silizium-dünnschicht - Google Patents

Verfahren zur herstellung einer solarzelle oder eines transistors mit einer kristallinen silizium-dünnschicht Download PDF

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Publication number
WO2011035848A3
WO2011035848A3 PCT/EP2010/005365 EP2010005365W WO2011035848A3 WO 2011035848 A3 WO2011035848 A3 WO 2011035848A3 EP 2010005365 W EP2010005365 W EP 2010005365W WO 2011035848 A3 WO2011035848 A3 WO 2011035848A3
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WO
WIPO (PCT)
Prior art keywords
solar cell
film layer
crystalline silicon
transistor
producing
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PCT/EP2010/005365
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English (en)
French (fr)
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WO2011035848A2 (de
Inventor
Burkhard Speit
Rolf Hansen
Urban Weber
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Schott Ag
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Publication of WO2011035848A2 publication Critical patent/WO2011035848A2/de
Publication of WO2011035848A3 publication Critical patent/WO2011035848A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Zur Herstellung einer Dünnschichtsolarzelle oder eines Dünnschichttransistors werden auf der Oberfläche des Substrats (1) kristalline Siliziumteilchen fixiert, worauf eine kristalline Silizium-Dünnschicht aus verschiedenen Teilschichten (2) epitaktisch abgeschieden wird.
PCT/EP2010/005365 2009-09-24 2010-09-01 Verfahren zur herstellung einer solarzelle oder eines transistors mit einer kristallinen silizium-dünnschicht WO2011035848A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009042886.0 2009-09-24
DE102009042886A DE102009042886A1 (de) 2009-09-24 2009-09-24 Verfahren zur Herstellung einer Solarzelle oder eines Transistors mit einer kristallinen Silizium-Dünnschicht

Publications (2)

Publication Number Publication Date
WO2011035848A2 WO2011035848A2 (de) 2011-03-31
WO2011035848A3 true WO2011035848A3 (de) 2011-07-21

Family

ID=43332280

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PCT/EP2010/005365 WO2011035848A2 (de) 2009-09-24 2010-09-01 Verfahren zur herstellung einer solarzelle oder eines transistors mit einer kristallinen silizium-dünnschicht

Country Status (2)

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DE (1) DE102009042886A1 (de)
WO (1) WO2011035848A2 (de)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027053A (en) * 1975-12-19 1977-05-31 Motorola, Inc. Method of producing polycrystalline silicon ribbon
EP0276961A2 (de) * 1987-01-26 1988-08-03 Canon Kabushiki Kaisha Sonnenzelle und ihr Herstellungsverfahren
EP0343846A2 (de) * 1988-05-27 1989-11-29 Xerox Corporation Verfahren zur Herstellung von polykristallinem Diamant
WO1992001827A1 (en) * 1988-06-03 1992-02-06 Massachusetts Institute Of Technology Oriented diamond crystals
EP0541033A2 (de) * 1991-11-08 1993-05-12 Siemens Aktiengesellschaft Verfahren zur Herstellung von polykristallinen Silizium-Dünnschicht-Solarzellen
US5830538A (en) * 1993-12-23 1998-11-03 International Business Machines Corporation Method to form a polycrystalline film on a substrate
US20020036011A1 (en) * 2000-09-25 2002-03-28 National Institute Of Advanced Industrial Science And Technology Method of manufacturing a solar cell
EP2091085A2 (de) * 2008-02-12 2009-08-19 SCHOTT Solar GmbH Photovoltaisches Modul und Verfahren zu dessen Herstellung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721271B2 (ja) * 1990-11-20 1998-03-04 キヤノン株式会社 太陽電池の製造方法
KR20060081296A (ko) 2005-01-08 2006-07-12 삼성코닝 주식회사 실리콘 필름의 제조방법
US7410883B2 (en) 2005-04-13 2008-08-12 Corning Incorporated Glass-based semiconductor on insulator structures and methods of making same
US7268051B2 (en) 2005-08-26 2007-09-11 Corning Incorporated Semiconductor on glass insulator with deposited barrier layer
JP4839041B2 (ja) 2005-08-29 2011-12-14 東レ・ダウコーニング株式会社 絶縁性液状ダイボンディング剤および半導体装置
DE102005045096A1 (de) * 2005-09-21 2007-03-29 Institut für Physikalische Hochtechnologie e.V. Dünnschichtsolarzelle und Verfahren zur Herstellung eines Halbleiterbauelements
US20080295885A1 (en) * 2007-05-30 2008-12-04 Shing Man Lee Thick Crystalline Silicon Film On Large Substrates for Solar Applications
DE102008012891A1 (de) * 2008-03-06 2009-09-10 Schott Ag Glaskeramikartikel mit einer anorganischen lichtstreuenden Beschichtung, Verfahren zu seiner Herstellung und Beschichtungszusammensetzung

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027053A (en) * 1975-12-19 1977-05-31 Motorola, Inc. Method of producing polycrystalline silicon ribbon
EP0276961A2 (de) * 1987-01-26 1988-08-03 Canon Kabushiki Kaisha Sonnenzelle und ihr Herstellungsverfahren
EP0343846A2 (de) * 1988-05-27 1989-11-29 Xerox Corporation Verfahren zur Herstellung von polykristallinem Diamant
WO1992001827A1 (en) * 1988-06-03 1992-02-06 Massachusetts Institute Of Technology Oriented diamond crystals
EP0541033A2 (de) * 1991-11-08 1993-05-12 Siemens Aktiengesellschaft Verfahren zur Herstellung von polykristallinen Silizium-Dünnschicht-Solarzellen
US5830538A (en) * 1993-12-23 1998-11-03 International Business Machines Corporation Method to form a polycrystalline film on a substrate
US20020036011A1 (en) * 2000-09-25 2002-03-28 National Institute Of Advanced Industrial Science And Technology Method of manufacturing a solar cell
EP2091085A2 (de) * 2008-02-12 2009-08-19 SCHOTT Solar GmbH Photovoltaisches Modul und Verfahren zu dessen Herstellung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
G. BEAUCARNE, S. BOURDAI, A. SLAOUI, J. POORTMANS: "Thin-film polysilicon solar cells on foreign substrates using direct thermal CVD: material and solar cell design", THIN SOLID FILMS, vol. 403-404, 1 February 2002 (2002-02-01), pages 229 - 237, XP002617738 *

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DE102009042886A1 (de) 2011-05-26
WO2011035848A2 (de) 2011-03-31

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