WO2011016425A1 - Photoacid generator, photocurable composition and cured product of same - Google Patents

Photoacid generator, photocurable composition and cured product of same Download PDF

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Publication number
WO2011016425A1
WO2011016425A1 PCT/JP2010/063035 JP2010063035W WO2011016425A1 WO 2011016425 A1 WO2011016425 A1 WO 2011016425A1 JP 2010063035 W JP2010063035 W JP 2010063035W WO 2011016425 A1 WO2011016425 A1 WO 2011016425A1
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group
carbon atoms
phenylthio
phenyl
atom
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PCT/JP2010/063035
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French (fr)
Japanese (ja)
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一生 鈴木
秀基 木村
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サンアプロ株式会社
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Priority to JP2011525884A priority Critical patent/JP5699080B2/en
Publication of WO2011016425A1 publication Critical patent/WO2011016425A1/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • C08F2/48Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Definitions

  • the present invention relates to a photoacid generator, a curable composition, and a cured product thereof. More specifically, the present invention relates to a photoacid generator containing a specific sulfonium salt suitable for curing a cationically polymerizable compound by acting an active energy ray such as light, electron beam or X-ray, The present invention relates to a curable composition containing a generator and a cured product obtained by curing the curable composition.
  • a photoacid generator for use in curing a cationically polymerizable compound such as an epoxy compound by applying an active energy ray such as light, electron beam or X-ray
  • a triarylsulfonium salt Patent Document 1
  • naphthalene Phenacylsulfonium salts having a skeleton Patent Document 2
  • dialkylbenzylsulfonium salts Patent Document 3
  • sulfonium salts having a thioxanthone skeleton Patent Document 4
  • sulfonium salts having a polyarylsulfide skeleton Patent Document 5
  • i-line having a wavelength of 365 nm is widely used as exposure light in a photolithography process using a photoresist.
  • an inexpensive medium-pressure / high-pressure mercury lamp that exhibits good emission intensity can be used as an irradiation light source, and LED lamps having an emission wavelength in the i-line region (360 nm to 390 nm) have recently become widespread. It can also be mentioned. Therefore, the need for a photoacid generator exhibiting high sensitivity to i-line is expected to increase further in the future.
  • Patent Document 1 triarylsulfonium salts
  • Patent Document 2 phenacylsulfonium salts having a naphthalene skeleton
  • Patent Document 3 dialkylbenzylsulfonium salts
  • Patent Document 4 the sulfonium salt having a thioxanthone skeleton introduced therein (Patent Document 4) has a problem that the absorption rate is too large for i-line, and therefore, light curing does not pass to the deep part during thick film curing, resulting in a problem of poor curing.
  • Patent Document 5 sulfonium salt having a polyarylsulfide skeleton is described as being effective as a photoacid generator for mercury lamp irradiation, it is not disclosed for sensitivity to i-line.
  • the object of the present invention is to provide a compound with a cationically polymerizable compound such as an epoxy compound having high photosensitivity to i-line and high compatibility with a cationically polymerizable compound such as an epoxy compound. It is an object of the present invention to provide a new acid generator comprising a sulfonium salt having excellent storage stability.
  • the present inventor has found that a mixture of a specific sulfonium salt is suitable for the above purpose, and has further studied and completed the present invention. That is, the present invention provides a sulfonium salt represented by the following formula (1) and a sulfonium salt represented by the following formula (2).
  • R 1 to R 9 are independently of each other an alkyl group (including a “cycloalkyl group” in this specification), a hydroxyl group, an alkoxyl group, an alkylcarbonyl group.
  • m 4 , m 6 , m 7 and m 9 are integers from 0 to 5
  • M 1 , m 2 , m 3 , m 5 and m 8 represent an integer of 0 to 4
  • a 1 represents S or SO
  • X ⁇ represents a monovalent polyatomic anion.
  • the present invention also provides a photoacid generator characterized by containing a sulfonium salt represented by the above formula (1) and a sulfonium salt represented by the formula (2).
  • the present invention also provides an energy beam curable composition comprising the photoacid generator and a cationically polymerizable compound.
  • the present invention also provides a cured product obtained by curing the energy beam curable composition.
  • the sulfonium salt of the present invention has excellent photosensitivity to active energy rays such as visible light, ultraviolet rays, electron beams and X-rays, has high compatibility with cationically polymerizable compounds such as epoxy compounds, and cationic polymerization of epoxy compounds and the like. Storage stability is excellent in a blend with a functional compound.
  • the photoacid generator of the present invention is excellent in curability by the action of ultraviolet light, particularly i-ray, when used for curing a cationically polymerizable compound, and cures a cationically polymerizable compound without using a sensitizer. Can be made.
  • the photoacid generator of the present invention is also excellent in thick film curability.
  • the energy beam curable composition of the present invention contains the above-mentioned photoacid generator, it can be cured with ultraviolet light.
  • the energy ray-curable composition of the present invention has high storage stability and does not require the use of a sensitizer, and thus is excellent in cost and workability. Since the cured product of the present invention can be obtained without using a sensitizer, there is no problem of coloring or deterioration caused by the remaining sensitizer.
  • the sulfonium salt of the present invention is used for paints, coating agents, various coating materials (hard coat, anti-fouling coating materials, anti-fogging coating materials, touch-proof coating materials, optical fibers, etc.), back surface treatment agents for adhesive tapes, and adhesive labels.
  • Release coating materials for release sheets release paper, release plastic films, release metal foils, etc.
  • printing plates dental materials (dental compounds, dental composites, etc.), inks, inkjet inks, positive resists (circuit boards, Used for connection terminals and wiring pattern formation in the manufacture of electronic components such as CSP and MEMS elements), resist films, liquid resists, negative resists (permanent films such as surface protective films for semiconductor elements, interlayer insulating films, planarization films, etc.) Used for forming), MEMS resist, positive photosensitive material, negative photosensitive material, various adhesives (temporary fixing agent for various electronic components, DD adhesive, pickup lens adhesive, FPD functional film (deflection plate, antireflection film, etc.), holographic resin, FPD material (color filter, black matrix, partition material, photospacer, Rib, formation of alignment film for liquid crystal, and sealant for FPD), optical member, molding material (for building materials, optical parts, lenses, etc.), casting material, putty, glass fiber impregnating agent, sealing
  • the alkyl group is a linear alkyl group having 1 to 18 carbon atoms (methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-octyl, n-decyl, n-dodecyl, n-tetradecyl, n-hexadecyl, n-octadecyl, etc.), a branched alkyl group having 3 to 18 carbon atoms (isopropyl, isobutyl, sec-butyl, tert-butyl, Isopentyl, neopentyl, tert-pentyl, isohexyl and isooctadecyl), and cycloalkyl groups having 3 to 18 carbon atoms (such as cyclopropyl, cyclobutyl, cyclopentyl
  • the alkoxyl group includes a straight-chain alkoxyl group having 1 to 18 carbon atoms or a branched alkoxyl group having 3 to 18 carbon atoms (methoxy, ethoxy, propoxy, isopropoxy, butoxy, isobutoxy, sec -Butoxy, tert-butoxy, hexyloxy, decyloxy, dodecyloxy, octadecyloxy, etc.). Of these, a methoxy group is particularly preferred.
  • the alkylcarbonyl group includes a linear alkylcarbonyl group having 2 to 18 carbon atoms or a branched alkylcarbonyl group having 4 to 18 carbon atoms (acetyl, propionyl, butanoyl, 2-methylpropionyl, Heptanoyl, 2-methylbutanoyl, 3-methylbutanoyl, octanoyl, decanoyl, dodecanoyl, octadecanoyl, etc.). Of these, an acetyl group is particularly preferred.
  • examples of the arylcarbonyl group include arylcarbonyl groups having 7 to 11 carbon atoms (such as benzoyl and naphthoyl).
  • the alkoxycarbonyl group is a straight-chain alkoxycarbonyl group having 2 to 19 carbon atoms or a branched alkoxycarbonyl group having 4 to 19 carbon atoms (methoxycarbonyl, ethoxycarbonyl, propoxycarbonyl, isopropoxy Carbonyl, butoxycarbonyl, isobutoxycarbonyl, sec-butoxycarbonyl, tert-butoxycarbonyl, octyloxycarbonyl, tetradecyloxycarbonyl, octadecyloxycarbonyl, etc.).
  • examples of the aryloxycarbonyl group include aryloxycarbonyl groups having 7 to 11 carbon atoms (such as phenoxycarbonyl and naphthoxycarbonyl).
  • examples of the arylthiocarbonyl group include arylthiocarbonyl groups having 7 to 11 carbon atoms (such as phenylthiocarbonyl and naphthoxythiocarbonyl).
  • the acyloxy group includes a straight-chain acyloxy group having 2 to 19 carbon atoms or a branched acyloxy group having 4 to 19 carbon atoms (acetoxy, ethylcarbonyloxy, propylcarbonyloxy, isopropylcarbonyloxy, Butylcarbonyloxy, isobutylcarbonyloxy, sec-butylcarbonyloxy, tert-butylcarbonyloxy, octylcarbonyloxy, tetradecylcarbonyloxy, octadecylcarbonyloxy and the like.
  • the arylthio group is an arylthio group having 6 to 20 carbon atoms (phenylthio, 2-methylphenylthio, 3-methylphenylthio, 4-methylphenylthio, 2-chlorophenylthio, 3-chlorophenyl.
  • the alkylthio group includes a linear alkylthio group having 1 to 18 carbon atoms or a branched alkylthio group having 3 to 18 carbon atoms (methylthio, ethylthio, propylthio, isopropylthio, butylthio, isobutylthio, sec-butylthio, tert-butylthio, pentylthio, isopentylthio, neopentylthio, tert-pentylthio, octylthio, decylthio, dodecylthio, isooctadecylthio and the like.
  • examples of the aryl group include aryl groups having 6 to 10 carbon atoms (such as phenyl, tolyl, dimethylphenyl, and naphthyl).
  • the heterocyclic hydrocarbon group includes a heterocyclic hydrocarbon group having 4 to 20 carbon atoms (thienyl, furanyl, pyranyl, pyrrolyl, oxazolyl, thiazolyl, pyridyl, pyrimidyl, pyrazinyl, indolyl, Benzofuranyl, benzothienyl, quinolyl, isoquinolyl, quinoxalinyl, quinazolinyl, carbazolyl, acridinyl, phenothiazinyl, phenazinyl, xanthenyl, thianthenyl, phenoxazinyl, phenoxathinyl, chromanyl, isochromanyl, dibenzothienyl, xanthonyl, thioxanthonyl, etc. Is mentioned.
  • examples of the aryloxy group include aryloxy groups having 6 to 10 carbon atoms (such as phenoxy and naphthyloxy).
  • the alkylsulfinyl group is a linear alkylsulfinyl group having 1 to 18 carbon atoms or a branched alkylsulfinyl group having 3 to 18 carbon atoms (methylsulfinyl, ethylsulfinyl, propylsulfinyl, isopropylsulfinyl).
  • examples of the arylsulfinyl group include arylsulfinyl groups having 6 to 10 carbon atoms (such as phenylsulfinyl, tolylsulfinyl and naphthylsulfinyl).
  • the alkylsulfonyl group is a straight-chain alkylsulfonyl group having 1 to 18 carbon atoms or a branched alkylsulfonyl group having 3 to 18 carbon atoms (methylsulfonyl, ethylsulfonyl, propylsulfonyl, isopropylsulfonyl).
  • examples of the arylsulfonyl group include arylsulfonyl groups having 6 to 10 carbon atoms (phenylsulfonyl, tolylsulfonyl (tosyl group), naphthylsulfonyl, etc.) and the like.
  • examples of the hydroxy (poly) alkyleneoxy group include a hydroxy (poly) alkyleneoxy group represented by the formula (3).
  • AO represents an ethyleneoxy group and / or propyleneoxy group
  • q represents an integer of 1 to 5.
  • the optionally substituted amino group includes an amino group (—NH 2 ) and a hydrocarbon group substituent having 1 to 15 carbon atoms, which may include a saturated hydrocarbon group or an aromatic group.
  • a substituted amino group substituted with (methylamino, dimethylamino, ethylamino, methylethylamino, diethylamino, n-propylamino, methyl-n-propylamino, ethyl-n-propylamino, n-propylamino, isopropylamino, Isopropylmethylamino, isopropylethylamino, diisopropylamino, phenylamino, diphenylamino, methylphenylamino, ethylphenylamino, n-propylphenylamino, isopropylphenylamino, etc.).
  • examples of the halogen atom group include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
  • R 1 to R 9 are independent of each other, and therefore may be the same as or different from each other.
  • m 1 to m 9 represent the numbers of R 1 to R 9 , respectively, and m 4 , m 6 , m 7 and m 9 are integers of 0 to 5, preferably 0 to 3, more preferably 0 to 2. , Particularly preferably 0 or 1, and m 1 , m 2 , m 3 , m 5 and m 8 are integers of 0 to 4, preferably 0 to 3, more preferably 0 to 2, particularly preferably. Is 0 or 1. When m 1 to m 6 are in these preferred ranges, the photosensitivity of the sulfonium salt is further improved.
  • a 1 represents S (sulfur atom) or SO (sulfoxide). Each A 1 may be the same or different. If A 1 is S, preferably the light sensitive sulfonium salt is further improved.
  • sulfoniums of the present invention those having the following structures are particularly preferred from the viewpoint of photosensitivity.
  • X ⁇ corresponds to an acid (HX) generated by irradiating the sulfonium salt of the present invention with active energy rays (visible light, ultraviolet rays, electron beams, X-rays, etc.).
  • X ⁇ is not limited except that it is a monovalent polyatomic anion, but MY a ⁇ , (Rf) b PF 6-b ⁇ , R 10 c BY 4-c ⁇ , R 10 c GaY 4 -c -, R 11 SO 3 - , (R 11 SO 2) 3 C - or (R 11 SO 2) 2 N - anion represented by are preferred.
  • M represents a phosphorus atom, a boron atom, or an antimony atom.
  • Y represents a halogen atom (a fluorine atom is preferred).
  • Rf represents an alkyl group (preferably an alkyl group having 1 to 8 carbon atoms) in which 80 mol% or more of hydrogen atoms are substituted with fluorine atoms.
  • alkyl group to be converted into Rf by fluorine substitution include linear alkyl groups (such as methyl, ethyl, propyl, butyl, pentyl and octyl), branched chain alkyl groups (such as isopropyl, isobutyl, sec-butyl and tert-butyl) and And cycloalkyl groups (cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, etc.) and the like.
  • the ratio of hydrogen atoms of these alkyl groups substituted by fluorine atoms in Rf is preferably 80 mol% or more, more preferably 90%, based on the number of moles of hydrogen atoms that the original alkyl group had. % Or more, particularly preferably 100%.
  • the substitution ratio by fluorine atoms is within these preferable ranges, the photosensitivity of the sulfonium salt is further improved.
  • Particularly preferable Rf is CF 3- , CF 3 CF 2- , (CF 3 ) 2 CF-, CF 3 CF 2 CF 2- , CF 3 CF 2 CF 2 CF 2- , (CF 3 ) 2 CFCF 2-. , CF 3 CF 2 (CF 3 ) CF— and (CF 3 ) 3 C—.
  • the b Rf's are independent of each other, and therefore may be the same as or different from each other.
  • P represents a phosphorus atom
  • F represents a fluorine atom
  • R 10 represents a phenyl group in which a part of hydrogen atoms is substituted with at least one element or electron withdrawing group.
  • Examples of such one element include a halogen atom, and include a fluorine atom, a chlorine atom and a bromine atom.
  • Examples of the electron withdrawing group include a trifluoromethyl group, a nitro group, and a cyano group.
  • a phenyl group in which one hydrogen atom is substituted with a fluorine atom or a trifluoromethyl group is preferable.
  • c number of R 10 is independently from each other, therefore, it may be the same or different from each other.
  • B represents a boron atom
  • Ga represents a gallium atom
  • R 11 represents an alkyl group having 1 to 20 carbon atoms, a perfluoroalkyl group having 1 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms.
  • the alkyl group and the perfluoroalkyl group are linear or branched.
  • the aryl group may be unsubstituted or may have a substituent.
  • S represents a sulfur atom
  • O represents an oxygen atom
  • C represents a carbon atom
  • N represents a nitrogen atom.
  • a represents an integer of 4 to 6.
  • b is preferably an integer of 1 to 5, more preferably 2 to 4, and particularly preferably 2 or 3.
  • c is preferably an integer of 1 to 4, more preferably 4.
  • Examples of the anion represented by (Rf) b PF 6-b — include (CF 3 CF 2 ) 2 PF 4 ⁇ , (CF 3 CF 2 ) 3 PF 3 ⁇ , ((CF 3 ) 2 CF) 2 PF 4 ⁇ , ((CF 3 ) 2 CF) 3 PF 3 ⁇ , (CF 3 CF 2 CF 2 ) 2 PF 4 ⁇ , (CF 3 CF 2 CF 2 ) 3 PF 3 ⁇ , ((CF 3 ) 2 CFCF 2 ) 2 PF 4 ⁇ , ((CF 3 ) 2 CFCF 2 ) 3 PF 3 ⁇ , (CF 3 CF 2 CF 2 ) 2 PF 4 — or (CF 3 CF 2 CF 2 CF 2 ) 3 PF 3 — It is done.
  • (CF 3 CF 2 ) 3 PF 3 ⁇ , (CF 3 CF 2 CF 2 ) 3 PF 3 ⁇ , ((CF 3 ) 2 CF) 3 PF 3 ⁇ , ((CF 3 ) 2 CF) 2 PF 4 ⁇ , ((CF 3 ) 2 CFCF 2 ) 3 PF 3 — or ((CF 3 ) 2 CFCF 2 ) 2 PF 4 — is preferred.
  • Examples of the anion represented by R 10 c BY 4-c — include (C 6 F 5 ) 4 B ⁇ , ((CF 3 ) 2 C 6 H 3 ) 4 B ⁇ , (CF 3 C 6 H 4 ) 4 B -, (C 6 F 5) 2 BF 2 -, C 6 F 5 BF 3 - or (C 6 H 3 F 2) 4 B - , and the like. Of these, (C 6 F 5 ) 4 B — or ((CF 3 ) 2 C 6 H 3 ) 4 B — is preferred.
  • Examples of the anion represented by R 10 c GaY 4-c — include (C 6 F 5 ) 4 Ga ⁇ , ((CF 3 ) 2 C 6 H 3 ) 4 Ga ⁇ , (CF 3 C 6 H 4 ) 4 Ga -, (C 6 F 5) 2 GaF 2 -, C 6 F 5 GaF 3 - or (C 6 H 3 F 2) 4 Ga - , and the like. Of these, (C 6 F 5 ) 4 Ga - or ((CF 3 ) 2 C 6 H 3 ) 4 Ga - is preferred.
  • Examples of the anion represented by R 11 SO 3 — include trifluoromethanesulfonate anion, pentafluoroethanesulfonate anion, heptafluoropropanesulfonate anion, nonafluorobutanesulfonate anion, pentafluorophenylsulfonate anion, p-toluenesulfone.
  • Examples include an acid anion, benzene sulfonate anion, naphthalene sulfonate anion, anthracene sulfonate anion, camphor sulfonate anion, methane sulfonate anion, ethane sulfonate anion, propane sulfonate anion and butane sulfonate anion.
  • trifluoromethanesulfonate anion, nonafluorobutanesulfonate anion, benzenesulfonate anion or p-toluenesulfonate anion is preferred.
  • Examples of the anion represented by (R 11 SO 2 ) 3 C — include (CF 3 SO 2 ) 3 C ⁇ , (C 2 F 5 SO 2 ) 3 C ⁇ , (C 3 F 7 SO 2 ) 3 C ⁇ or (C 4 F 9 SO 2 ) 3 C — and the like.
  • Examples of the anion represented by (R 11 SO 2 ) 2 N ⁇ include (CF 3 SO 2 ) 2 N ⁇ , (C 2 F 5 SO 2 ) 2 N ⁇ , (C 3 F 7 SO 2 ) 2 N ⁇ or (C 4 F 9 SO 2 ) 2 N — and the like.
  • the monovalent polyatomic anions include MY a ⁇ , (Rf) b PF 6-b ⁇ , R 10 c BY 4-c ⁇ , R 10 c GaY 4-c ⁇ , R 11 SO 3 ⁇ , (R 11 In addition to the anion represented by SO 2 ) 3 C — or (R 11 SO 2 ) 2 N — , perhalogenate ions (ClO 4 ⁇ , BrO 4 — etc.), halogenated sulfonate ions (FSO 3 ⁇ , ClSO 3) - etc.), sulfate ion (CH 3 SO 4 -, CF 3 SO 4 -, HSO 4 - , etc.), carbonate ions (HCO 3 -, CH 3 CO 3 - , etc.), aluminate ions (AlCl 4 -, AlF 4 - etc.), hexafluoro bismuthate ions (BiF 6 -), carboxylate ion
  • (R 11 SO 2) 3 C - or (R 11 SO 2) 2 N - anion is preferably represented by, MY a -, (Rf) b PF 6-b -, R 10 c bY 4-c - , R 10 c GaY 4-c - or (R 11 SO 2) 3 C - more preferably, SbF 6 -, PF 6 - , (CF 3 CF 2) 3 PF 3 -, (C 6 F 5) 4 B -, ((CF 3) 2 C 6 H 3) 4 B -, (C 6 F 5) 4 Ga -, ((CF 3) 2 C 6 H 3) 4 Ga - or (CF 3 SO 2) 3 C - is particularly preferred.
  • the proportion of the sulfonium salt represented by formula (1) is at least It is preferably 50 mol%, more preferably at least 70 mol%, and even more preferably at least 80 mol%. This is because if the ratio of the sulfonium salt of the formula (1) is less than 50 mol%, the thermal stability of the sulfonium salt is lowered, and the storage stability when blended with a cationic polymerizable compound is deteriorated.
  • the sulfonium salt of formula (2) works to enhance the photocuring performance, but there is no particular lower limit to the blending ratio, and it may be 0.5 mol% or more, 1 mol% or more, 5 mol% or more, etc. . Therefore, for example, of the total amount of both, the sulfonium salt represented by the formula (1) can be 50 to 99.5 mol%, 50 to 99 mol%, 50 to 95 mol%, and the like.
  • the sulfonium salt mixture of the present invention can be produced, for example, by the production method (1) described below.
  • R 1 to R 9 , S, O, A 1 , X ⁇ , m 1 to m 9 are the same as defined in the formulas (1) and (2).
  • H represents a hydrogen atom.
  • HX ′ represents a conjugate acid of a monovalent polyatomic anion.
  • HX ′ is preferably methanesulfonic acid, perfluoromethanesulfonic acid and sulfuric acid from the viewpoints of availability, acid stability and reaction yield.
  • the dehydrating agent represents, for example, phosphoric anhydride and acetic anhydride.
  • the monovalent polyatomic anion (X ′ ⁇ ) can be exchanged for another anion (X ⁇ ) of the present invention by, for example, a side decomposition reaction as described above.
  • DX represents an alkali metal (lithium, sodium, potassium, etc.) cation and another anion of the present invention (eg, MY a ⁇ , (Rf) b PF 6-b ⁇ , R 10 c BY 4-c ⁇ , R 10 c
  • DX ′ represents a salt of an alkali metal (such as lithium, sodium and potassium) cation and a monovalent polyatomic anion (preferably a methanesulfonate anion, a perfluoromethanesulfonate anion and a hydrogen sulfate anion).
  • an alkali metal such as lithium, sodium and potassium
  • a monovalent polyatomic anion preferably a methanesulfonate anion, a perfluoromethanesulfonate anion and a hydrogen sulfate anion.
  • the ratio of ⁇ G5 (G3)> and ⁇ G6 (G4)> which are the sulfonium salts of the present invention, can be adjusted by the ratio of sulfide ⁇ G1> and sulfoxide ⁇ G2> as raw materials, and the molar ratio of sulfoxide to sulfide can be adjusted.
  • the production ratio of ⁇ G6 (G4)> increases, and when the molar ratio of sulfoxide to sulfide is decreased, the production ratio of ⁇ G5 (G3)> increases.
  • the first-stage reaction may be carried out in the absence of a solvent or, if necessary, in an organic solvent (acetonitrile, tetrahydrofuran, dioxane, ethanol, acetone, etc.).
  • the reaction temperature is about 20 to 105 ° C.
  • the reaction time is about 1 to several tens of hours.
  • the reaction in the second stage may be performed subsequent to the reaction in the first stage, or may be performed after the reaction intermediates (G3) and (G4) are isolated (purified as necessary).
  • the reaction intermediates (G3) and (G4) and an aqueous solution of the salt (MX) of an alkali metal cation and an anion of the present invention are mixed and stirred to perform a metathesis reaction, and the precipitated solid is filtered off, Alternatively, by extracting the separated oily substance with an organic solvent and removing the organic solvent, the sulfonium salt of the present invention is obtained as a solid or viscous liquid.
  • the obtained solid or viscous liquid can be washed with an appropriate organic solvent, if necessary, or purified by recrystallization or column chromatography (the same applies hereinafter).
  • ⁇ Manufacturing method (2)> ⁇ G2> can be synthesized by the oxidation reaction described in the 4th edition, Experimental Chemistry Course Vol. 23 (1991, Maruzen), pages 276 to 277, etc. as shown in the following reaction formula.
  • R 4 to R 6 , S, O, A 1 , and m 4 to m 6 are the same as defined in the formulas (1) and (2).
  • the oxidizing agent represents an oxidizing agent (hydrogen peroxide or the like).
  • the chemical structure of the sulfonium salt of the present invention can be determined by a general analytical method (for example, 1 H-, 11 B-, 13 C-, 19 F-, 31 P-nuclear magnetic resonance spectrum, infrared absorption spectrum and / or element). Analysis).
  • the sulfonium salt mixture of the present invention is suitable as a photoacid generator.
  • a photoacid generator is an acid generator that decomposes its chemical structure when irradiated with light. The generated acid can be applied as a catalyst for the curing reaction of epoxides.
  • the photoacid generator of the present invention the mixture of the present invention may be used as it is, or another photoacid generator may be contained in this mixture.
  • the content (mol%) of the other photoacid generator is preferably 1 to 100, more preferably 5 to 50, based on the total number of moles of the sulfonium salt in the mixture. It is.
  • photoacid generators include conventionally known ones such as salts of onium ions (sulfonium, iodonium, selenium, ammonium, phosphonium, etc.) or transition metal complex ions with anions.
  • perhalogenate ions ClO 4 ⁇ , BrO 4 — etc.
  • halogenated sulfonate ions FSO 3 ⁇ , ClSO 3 — etc.
  • sulfuric acid Ion CH 3 SO 4 ⁇ , CF 3 SO 4 ⁇ , HSO 4 ⁇ etc.
  • carbonate ion HCO 3 ⁇ , CH 3 CO 3 ⁇ etc.
  • aluminate ion AlCl 4 ⁇ , AlF 4 ⁇ etc.
  • hexa Fluorobismate ion BiF 6 ⁇
  • carboxylate ion CH 3 COO
  • sulfonium ions include triarylsulfonium, diarylsulfonium, monoarylsulfonium, and trialkylsulfonium.
  • triarylsulfonium examples include triphenylsulfonium, tri-p-tolylsulfonium, tri-o-tolylsulfonium, tris (4-methoxyphenyl) sulfonium, 1-naphthyldiphenylsulfonium, 2-naphthyldiphenylsulfonium, tris (4-fluoro Phenyl) sulfonium, tri-1-naphthylsulfonium, tri-2-naphthylsulfonium, tris (4-hydroxyphenyl) sulfonium, 4- (phenylthio) phenyldiphenylsulfonium, 4- (p-tolylthio) phenyldi-p-tolylsulfonium, 4- (4-methoxyphenylthio) phenylbis (4-methoxyphenyl) sulfonium, 4- (pheny
  • JP-T-2005-501040, JP 2005-530698, JP 2006-104185, JP-T-2006-518332 and JP 2007-254454 No., etc. JP-A-11-80118, JP-A-10-182825, JP-A-10-330353, JP-A-10-152495, JP-A-5-239213, JP-A-7-333834, JP-A-9-12537, JP-A-9-12537.
  • diarylsulfonium examples include diphenylphenacylsulfonium, diphenyl4-nitrophenacylsulfonium, diphenylbenzylsulfonium and diphenylmethylsulfonium (Japanese Patent Laid-Open Nos. 7-300504, 64-45357 and 64-64). 29419 etc.).
  • Examples of monoarylsulfonium include phenylmethylbenzylsulfonium, 4-hydroxyphenylmethylbenzylsulfonium, 4-methoxyphenylmethylbenzylsulfonium, 4-acetocarbonyloxyphenylmethylbenzylsulfonium, 2-naphthylmethylbenzylsulfonium, 2-naphthylmethyl (1 -Ethoxycarbonyl) ethylsulfonium, phenylmethylphenacylsulfonium, 4-hydroxyphenylmethylphenacylsulfonium, 4-methoxyphenylmethylphenacylsulfonium, 4-acetocarbonyloxyphenylmethylphenacylsulfonium, 2-naphthylmethylphenacylsulfonium, 2-naphthyloctadecylphenacylsulfonium and 9-anthracenylmethylphenacyl Examples include ruthenium (Japanes
  • trialkylsulfonium examples include dimethylphenacylsulfonium, phenacyltetrahydrothiophenium, dimethylbenzylsulfonium, benzyltetrahydrothiophenium, and octadecylmethylphenacylsulfonium (Japanese Patent Laid-Open Nos. 4-308563 and 5-140210). JP, 5-140209, JP 5-230189, JP 6-271532, JP 58-37003, JP 2-178303, JP 10-338688, JP 9-328506. No.
  • Examples of the iodonium ion include diphenyliodonium, di-p-tolyliodonium, bis (4-dodecylphenyl) iodonium, bis (4-methoxyphenyl) iodonium, (4-octyloxyphenyl) phenyliodonium, bis (4-decyloxyphenyl) ) Iodonium, 4- (2-hydroxytetradecyloxy) phenylphenyliodonium, 4-isopropylphenyl (p-tolyl) iodonium, isobutylphenyl (p-tolyl) iodonium, etc.
  • Selenium ions include triaryl selenium (triphenyl selenium, tri-p-tolyl selenium, tri-o-tolyl selenium, tris (4-methoxyphenyl) selenium, 1-naphthyldiphenyl selenium, tris (4-fluorophenyl) selenium , Tri-1-naphthyl selenium, tri-2-naphthyl selenium, tris (4-hydroxyphenyl) selenium, 4- (phenylthio) phenyldiphenyl selenium and 4- (p-tolylthio) phenyldi-p-tolyl selenium), diaryl Selenium (diphenylphenacyl selenium, diphenyl benzyl selenium, diphenylmethyl selenium, etc.), monoaryl selenium (phenylmethyl benzyl selenium, 4-hydroxyphenyl methanium) Rubenzyl selenium,
  • ammonium ions include tetraalkylammonium (tetramethylammonium, ethyltrimethylammonium, diethyldimethylammonium, triethylmethylammonium, tetraethylammonium, trimethyl-n-propylammonium, trimethylisopropylammonium, trimethyl-n-butylammonium, trimethylisobutylammonium, Trimethyl-t-butylammonium, trimethyl-n-hexylammonium, dimethyldi-n-propylammonium, dimethyldiisopropylammonium, dimethyl-n-propylisopropylammonium, methyltri-n-propylammonium and methyltriisopropylammonium), pyrrolidinium (N , N-Dimethylpyrrolidinium N-ethyl-N-methylpyrrolidinium and N, N-diethyl
  • No. 406 Japanese Patent Publication No. 2519480, Japanese Patent Application Laid-Open No. 5-222112, Japanese Patent Application Laid-Open No. 5-222111, Japanese Patent Application Laid-Open No. 5-262613, Japanese Patent Application Laid-Open No. 5-255256, Japanese Patent Application Laid-Open No. 7-109303, Japanese Patent Application Laid-Open No.
  • phosphonium ions include tetraarylphosphonium (tetraphenylphosphonium, tetra-p-tolylphosphonium, tetrakis (2-methoxyphenyl) phosphonium, tetrakis (3-methoxyphenyl) phosphonium, tetrakis (4-methoxyphenyl) phosphonium, etc.), tria Reel phosphonium (triphenylbenzylphosphonium, triphenylphenacylphosphonium, triphenylmethylphosphonium, triphenylbutylphosphonium, etc.) and tetraalkylphosphonium (triethylbenzylphosphonium, tributylbenzylphosphonium, tetraethylphosphonium, tetrabutylphosphonium, tetrahexylphosphonium, triethyl Phenacylphosphonium and tributylphenacylphos
  • Transition metal complex ions include chromium complex cations ⁇ ( ⁇ 5-cyclopentadienyl) ( ⁇ 6-toluene) Cr + , ( ⁇ 5-cyclopentadienyl) ( ⁇ 6-xylene) Cr + , ( ⁇ 5-cyclopentadienyl) ) ( ⁇ 6-1-methylnaphthalene) Cr + , ( ⁇ 5-cyclopentadienyl) ( ⁇ 6-cumene) Cr + , ( ⁇ 5-cyclopentadienyl) ( ⁇ 6-mesitylene) Cr + , ( ⁇ 5-cyclopentadiene) Enyl) ( ⁇ 6-pyrene) Cr + , ( ⁇ 5-fluorenyl) ( ⁇ 6-cumene) Cr + , ( ⁇ 5-indenyl) ( ⁇ 6-cumene) Cr + , bis ( ⁇ 6-mesitylene) Cr 2+ , bis ( ⁇ 6-xylene) ) Cr 2+, bis (Ita6
  • the photoacid generator of the present invention may be dissolved in advance in a solvent that does not inhibit cationic polymerization in order to facilitate dissolution in a cationically polymerizable compound.
  • Solvents include carbonates (propylene carbonate, ethylene carbonate, 1,2-butylene carbonate, dimethyl carbonate and diethyl carbonate); esters (ethyl acetate, ethyl lactate, ⁇ -propiolactone, ⁇ -butyrolactone, ⁇ -butyrolactone, ⁇ -Valerolactone and ⁇ -caprolactone, etc.); ethers (ethylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol dimethyl ether, triethylene glycol diethyl ether, tripropylene glycol dibutyl ether, etc.); and ether esters ( Ethylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate And diethylene glycol monobutyl ether acetate, etc.) and the like.
  • esters ethyl acetate, ethyl lac
  • the proportion of the solvent used is preferably 15 to 1000 parts by weight, more preferably 30 to 500 parts by weight with respect to 100 parts by weight of the photoacid generator of the present invention.
  • the solvent to be used may be used independently or may use 2 or more types together.
  • the energy beam curable composition of the present invention is composed of the above-mentioned photoacid generator and a cationically polymerizable compound.
  • cationically polymerizable compounds examples include cyclic ethers (epoxides and oxetanes), ethylenically unsaturated compounds (vinyl ether and styrene, etc.), bicycloorthoesters, spiroorthocarbonates and spiroorthoesters (Japanese Patent Laid-Open No. 11-060996).
  • epoxide known ones can be used, and aromatic epoxides, alicyclic epoxides and aliphatic epoxides are included.
  • Aromatic epoxides include monovalent or polyvalent phenols having at least one aromatic ring (phenol, biphenol, bisphenol A, bisphenol F, phenol novolac, cresol novolac and brominated products thereof or alkylene oxide adducts thereof.
  • a glycidyl ether of a compound) and a glycidyl ester (such as diglycidyl phthalate and diglycidyl-3-methyl phthalate) of a monovalent or polyvalent carboxylic acid (such as phthalic acid and 3-methylphthalic acid) having at least one aromatic ring Can be mentioned.
  • alicyclic epoxide a compound obtained by epoxidizing a compound having at least one cyclohexene or cyclopentene ring with an oxidizing agent (3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, 3, 4-epoxy-1-methylcyclohexyl-3,4-epoxy-1-methylhexanecarboxylate, 6-methyl-3,4-epoxycyclohexylmethyl-6-methyl-3,4-epoxycyclohexanecarboxylate, 3,4 -Epoxy-3-methylcyclohexylmethyl-3,4-epoxy-3-methylcyclohexanecarboxylate, 3,4-epoxy-5-methylcyclohexylmethyl-3,4-epoxy-5-methylcyclohexanecarboxylate, 2- ( 3, -Epoxycyclohexyl-5,5-spiro-3,4-epoxy-3,
  • Aliphatic epoxides include aliphatic polyhydric alcohols or polyglycidyl ethers of this alkylene oxide adduct (1,4-butanediol diglycidyl ether, 1,6-hexanediol diglycidyl ether, hydrogenated bisphenol A diglycidyl ether, Triglycidyl ether of glycerin, triglycidyl ether of trimethylolpropane, tetraglycidyl ether of sorbitol and hexaglycidyl ether of dipentaerythritol), polyglycidyl ester of aliphatic polybasic acid (diglycidyl tetrahydrophthalate, diglycidyl hexahydrophthalate) And diglycidyl hexahydro-3-methylphthalate), epoxidized products of long-chain unsaturated compounds (epoxidized soybean oil, epoxidized poly
  • oxetane known ones can be used, such as 3-ethyl-3-hydroxymethyloxetane, (3-ethyl-3-oxetanylmethoxy) methylbenzene, [1- (3-ethyl-3-oxetanylmethoxy) ethyl] Phenyl ether, isobutoxymethyl (3-ethyl-3-oxetanylmethyl) ether, isobornyloxyethyl (3-ethyl-3-oxetanylmethyl) ether, isobornyl (3-ethyl-3-oxetanylmethyl) ether, 2- Ethylhexyl (3-ethyl-3-oxetanylmethyl) ether, ethyldiethylene glycol (3-ethyl-3-oxetanylmethyl) ether, dicyclopentenyloxyethyl (3-ethyl-3-oxetanylmethyl) ether,
  • known cationically polymerizable monomers and the like can be used, and include aliphatic monovinyl ether, aromatic monovinyl ether, polyfunctional vinyl ether, styrene, and cationically polymerizable nitrogen-containing monomers.
  • Aliphatic monovinyl ethers include methyl vinyl ether, ethyl vinyl ether, butyl vinyl ether, isobutyl vinyl ether, cyclohexyl vinyl ether, 2-chloroethyl vinyl ether, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, stearyl vinyl ether, 2-acetoxyethyl vinyl ether, diethylene glycol Examples thereof include monovinyl ether, 2-ethylhexyl vinyl ether, dodecyl vinyl ether, octadecyl vinyl ether, allyl vinyl ether, 2-methacryloyloxyethyl vinyl ether, and 2-acryloyloxyethyl vinyl ether.
  • aromatic monovinyl ether examples include 2-phenoxyethyl vinyl ether, phenyl vinyl ether and p-methoxyphenyl vinyl ether.
  • Polyfunctional vinyl ethers include butanediol-1,4-divinyl ether, triethylene glycol divinyl ether, 1,4-benzene divinyl ether, hydroquinone divinyl ether, cyclohexanedimethanol divinyl ether (1,4-bis [(vinyloxy) methyl Cyclohexane), diethylene glycol divinyl ether, dipropylene glycol divinyl ether, hexanediol divinyl ether, and the like.
  • styrene examples include styrene, ⁇ -methylstyrene, p-methoxystyrene, and p-tert-butoxystyrene.
  • Examples of the cationic polymerizable nitrogen-containing monomer include N-vinylcarbazole and N-vinylpyrrolidone.
  • Bicycloorthoesters include 1-phenyl-4-ethyl-2,6,7-trioxabicyclo [2.2.2] octane and 1-ethyl-4-hydroxymethyl-2,6,7-trioxabicyclo. -[2.2.2] octane and the like.
  • spiro orthocarbonates examples include 1,5,7,11-tetraoxaspiro [5.5] undecane and 3,9-dibenzyl-1,5,7,11-tetraoxaspiro [5.5] undecane. It is done.
  • Spiro orthoesters include 1,4,6-trioxaspiro [4.4] nonane, 2-methyl-1,4,6-trioxaspiro [4.4] nonane and 1,4,6-trioxas. Examples include pyro [4.5] decane.
  • cationically polymerizable compounds epoxides, oxetanes and vinyl ethers are preferable, epoxides and oxetanes are more preferable, and alicyclic epoxides and oxetanes are particularly preferable.
  • these cationically polymerizable compounds may be used alone or in combination of two or more.
  • the content of the photoacid generator of the present invention in the energy ray curable composition is preferably 0.05 to 20 parts by weight, more preferably 0.1 to 10 parts by weight with respect to 100 parts of the cationic polymerizable compound. is there. Within this range, the cationically polymerizable compound is further sufficiently polymerized, and the physical properties of the cured product are further improved. This content is determined by considering various factors such as the nature of the cationic polymerizable compound, the type and energy dose of the energy ray, temperature, curing time, humidity, and coating thickness, and is limited to the above range. Not.
  • a known additive for the energy ray curable composition of the present invention, a known additive (sensitizer, pigment, filler, antistatic agent, flame retardant, antifoaming agent, flow control agent, light stabilizer, Antioxidants, adhesion-imparting agents, ion scavengers, solvents, non-reactive resins, radical polymerizable compounds, and the like).
  • the energy beam curable composition of the present invention basically does not require a sensitizer, but may contain a sensitizer as necessary to supplement the curability.
  • a sensitizer known sensitizers (Japanese Patent Laid-Open Nos. 11-279212 and 09-183960) can be used, and anthracene ⁇ anthracene, 9,10-dibutoxyanthracene, 9,10 -Dimethoxyanthracene, 9,10-diethoxyanthracene, 2-ethyl-9,10-dimethoxyanthracene, 2-tert-butyl-9,10-dimethoxyanthracene, 2,3-dimethyl-9,10-dimethoxyanthracene, 9 -Methoxy-10-methylanthracene, 9,10-diethoxyanthracene, 2-ethyl-9,10-diethoxyanthracene, 2-tert-butyl-9,10-diethoxyanthracene,
  • the content of the sensitizer is preferably 1 to 300 parts by weight, more preferably 5 to 200 parts by weight, with respect to 100 parts of the photoacid generator.
  • pigments known pigments and the like can be used, and inorganic pigments (such as titanium oxide, iron oxide, and carbon black) and organic pigments (such as azo pigments, cyanine pigments, phthalocyanine pigments, and quinacridone pigments) can be used.
  • inorganic pigments such as titanium oxide, iron oxide, and carbon black
  • organic pigments such as azo pigments, cyanine pigments, phthalocyanine pigments, and quinacridone pigments
  • the content of the pigment is preferably 0.5 to 400,000 parts by weight, more preferably 10 to 150,000 parts by weight with respect to 100 parts of the photoacid generator.
  • fillers can be used as fillers, such as fused silica, crystalline silica, calcium carbonate, aluminum oxide, aluminum hydroxide, zirconium oxide, magnesium carbonate, mica, talc, calcium silicate and lithium aluminum silicate. Can be mentioned.
  • the content of the filler is preferably 50 to 600000 parts by weight, more preferably 300 to 200000 parts by weight with respect to 100 parts of the photoacid generator.
  • antistatic agent known antistatic agents can be used, and nonionic antistatic agents ⁇ glycerin fatty acid ester, polyoxyethylene alkyl ether, polyoxyethylene alkyl phenyl ether, N, N-bis (2-hydroxyethyl) ) Alkylamine, polyoxyethylene alkylamine, polyoxyethylene alkylamine fatty acid ester, alkyldiethanolamide, etc. ⁇ ; anionic antistatic agent ⁇ alkyl sulfonate, alkylbenzene sulfonate, alkyl phosphate, etc. ⁇ ; cationic charge Inhibitor ⁇ tetraalkylammonium salt and trialkylbenzylammonium salt, etc. ⁇ ; amphoteric antistatic agent ⁇ alkylbetaine and alkylimidazolium betaine etc. ⁇ ; polymer antistatic agent ⁇ quaternary ammo-containing styrene- (medium ) Acrylate copolymer, quaternary ammoni
  • the content of the antistatic agent is preferably 0.1 to 20000 parts by weight, more preferably 0.6 to 5000 parts by weight, with respect to 100 parts of the photoacid generator.
  • Inorganic flame retardant ⁇ antimony trioxide, antimony pentoxide, tin oxide, tin hydroxide, molybdenum oxide, zinc borate, barium metaborate, red phosphorus, aluminum hydroxide , Magnesium hydroxide, calcium aluminate, etc. ⁇ ; bromine flame retardant ⁇ tetrabromophthalic anhydride, hexabromobenzene, decabromobiphenyl ether, etc. ⁇ ; and phosphate ester flame retardant ⁇ tris (tribromophenyl) phosphate, etc. ⁇ It is done.
  • the content of the flame retardant is preferably 0.5 to 40000 parts by weight, more preferably 5 to 10000 parts by weight with respect to 100 parts of the photoacid generator.
  • antifoaming agent known antifoaming agents can be used, alcohol defoaming agents ⁇ isopropanol, n-butanol, octaethyl alcohol, hexadecyl alcohol, etc. ⁇ ; metal soap defoaming agents ⁇ calcium stearate, aluminum stearate, etc.
  • the content of the antifoaming agent is preferably 0.1 to 20000 parts by weight, more preferably 0.5 to 5000 parts by weight with respect to 100 parts of the photoacid generator.
  • known flow control agents can be used, and examples thereof include hydrogenated castor oil, polyethylene oxide, organic bentonite, colloidal silica, amide wax, metal soap, and acrylate polymer.
  • the content of the fluidity modifier is preferably 0.1 to 20000 parts by weight, more preferably 0.5 to 5000 parts by weight with respect to 100 parts of the photoacid generator. .
  • UV absorbing stabilizers ⁇ benzotriazole, benzophenone, salicylate, cyanoacrylate and derivatives thereof ⁇ ; radical scavenging stabilizers ⁇ hindered amine, etc. ⁇ ; and quenching And a type stabilizer ⁇ nickel complex etc. ⁇ .
  • the content of the light stabilizer is preferably 0.05 to 40,000 parts by weight, more preferably 0.5 to 10,000 parts by weight with respect to 100 parts of the photoacid generator.
  • antioxidants known antioxidants can be used, such as phenolic antioxidants (monophenolic, bisphenolic and polymeric phenolic), sulfur antioxidants and phosphorus antioxidants. It is done.
  • the content of the antioxidant is preferably 0.1 to 20000 parts by weight, more preferably 0.6 to 5000 parts by weight with respect to 100 parts of the photoacid generator.
  • adhesion-imparting agent a known adhesion-imparting agent can be used, and examples thereof include a coupling agent, a silane coupling agent, and a titanium coupling agent.
  • the content of the adhesiveness-imparting agent is preferably 0.1 to 20000 parts by weight, more preferably 0.6 to 5000 parts by weight with respect to 100 parts of the adhesiveness-imparting agent. .
  • ion scavenger known ion scavengers can be used, and organic aluminum (alkoxyaluminum, phenoxyaluminum, etc.) and the like can be mentioned.
  • the content of the ion scavenger is preferably 0.1 to 20000 parts by weight, more preferably 0.6 to 5000 parts by weight with respect to 100 parts of the photoacid generator.
  • the solvent is not limited as long as it can be used for dissolving a cationically polymerizable compound or adjusting the viscosity of an energy ray-curable composition.
  • ether anisole, diethyl Ether, tetrahydrofuran, 1,4-dioxane and ethyl-tert-butyl ether, etc. ⁇
  • aromatic hydrocarbon ⁇ toluene, xylene, cumene, ethylbenzene, mesitylene, etc. ⁇
  • the content of the solvent is preferably 50 to 2,000,000 parts by weight, more preferably 200 to 500,000 parts by weight with respect to 100 parts of the photoacid generator.
  • Non-reactive resins include polyester, polyvinyl acetate, polyvinyl chloride, polybutadiene, polycarbonate, polystyrene, polyvinyl ether, polyvinyl butyral, polybutene, hydrogenated styrene butadiene block copolymer, and (meth) acrylic ester co-polymer.
  • Examples include coalescence and polyurethane.
  • the number average molecular weight of these resins is preferably 1,000 to 500,000, more preferably 5000 to 100,000 (the number average molecular weight is a value measured by a general method such as GPC).
  • the content of the non-reactive resin is preferably 5 to 400000 parts by weight, more preferably 50 to 150,000 parts by weight with respect to 100 parts of the photoacid generator.
  • non-reactive resin When a non-reactive resin is included, it is desirable to dissolve the non-reactive resin in a solvent in advance so that the non-reactive resin can be easily dissolved with the cationic polymerizable compound.
  • Monofunctional monomers include methyl (meth) acrylate, ethyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 1,6-hexanediol mono (meta) ) Acrylate, styrene, vinylcyclohexene, isobutylene and butadiene.
  • Bifunctional monomers include dihydric alcohols or di (meth) acrylates of these alkylene oxide adducts ⁇ dihydric alcohols (ethylene hydride, propylene glycol, bisphenol A, bisphenol A hydrides and their alkylene oxide adducts, etc.) Di (meth) acrylate ⁇ and divinylbenzene.
  • a monomer other than the bifunctional monomer can be used, and examples thereof include (meth) acrylates of polyhydric alcohols (trimethylolpropane, glycerin, pentaerythritol, and adducts thereof with an alkylene oxide).
  • epoxy (meth) acrylate examples include epoxy (meth) acrylate obtained by reacting epoxide ⁇ aromatic epoxide, alicyclic epoxide, aliphatic epoxide, etc. ⁇ with (meth) acrylic acid.
  • Polyester (meth) acrylates include aromatic polybasic acids (phthalic acid, isophthalic acid, terephthalic acid, trimellitic acid, pyromellitic acid, etc.) or aliphatic polybasic acids (succinic acid, adipic acid, sebacic acid, etc.) , Polyhydric alcohol (ethylene glycol, diethylene glycol, polyethylene glycol, propylene glycol, dipropylene glycol, polypropylene glycol, neopentyl glycol, polytetramethylene glycol, 1,3-butanediol, 1,4-butanediol, 1,6- Esterification of a hydroxy-terminated polyester obtained from hexanediol, trimethylolpropane, glycerin, pentaerythritol, bisphenol and their alkylene oxide adducts) with (meth) acrylic acid.
  • the polyester (meth) acrylate obtained.
  • Urethane (meth) acrylates include polyfunctional isocyanates ⁇ alicyclic isocyanates (such as isophorone diisocyanate and dicyclohexylmethane diisocyanate), aliphatic isocyanates (such as tetramethylene diisocyanate and hexamethylene diisocyanate), aromatic isocyanates (toluene diisocyanate, phenylene diisocyanate and Diphenylmethane diisocyanate etc.) and polyhydric alcohol ⁇ ethylene glycol, diethylene glycol, polyethylene glycol, propylene glycol, polypropylene glycol, neopentyl glycol, polytetramethylene glycol, 1,3-butanediol, 1,4-butanediol, 1 , 6-hexanediol, trimethylolpropane, glycerin, pe An isocyanate-terminated prepolymer obtained from taeryth
  • the content of the radical polymerizable compound is preferably 5 to 400000 parts by weight, more preferably 50 to 150,000 parts by weight with respect to 100 parts of the photoacid generator.
  • radical polymerizable compound When a radical polymerizable compound is contained, it is preferable to use a radical polymerization initiator that initiates polymerization by heat or light in order to increase the molecular weight by radical polymerization.
  • radical polymerization initiator a known radical polymerization initiator or the like can be used, and a thermal radical polymerization initiator and a photo radical polymerization initiator are included.
  • organic peroxides ⁇ ketone peroxides (such as methyl ethyl ketone peroxide and cyclohexanone peroxide), peroxyketals (2,2-bis (tert-butylperoxy) butane and 1,1-bis (Tert-butylperoxy) cyclohexane, etc.), hydroperoxides (such as tert-butylhydroperoxide and cumene hydroperoxide), dialkyl peroxides (such as di-tert-butylperoxide), diacyl peroxides (isobutyryl peroxide) Oxide, lauroyl peroxide and benzoyl peroxide), peroxydicarbonate (diisopropyl peroxydicarbonate, etc.), peroxyester (tert-butylperoxyisobutyrate and 2,5-dimethyl) -2,5-di (benzoylperoxy) hexane
  • ketoone peroxides
  • photo radical polymerization initiators include acetophenone initiators ⁇ acetophenone, p-tert-butyltrichloroacetophenone and 2,2-diethoxyacetophenone, etc. ⁇ , benzophenone initiators ⁇ benzophenone, methyl o-benzoylbenzoate and 4-benzoyl-4 '-Methyldiphenyl sulfide, etc. ⁇ , Michler's ketone initiator ⁇ 4,4'-bis (dimethylamino) benzophenone and 4,4'-bis (diethylamino) benzophenone, etc. ⁇ , benzoin initiator ⁇ benzoin, benzoin methyl ether, etc. ⁇ , thioxanthone Initiators ⁇ thioxanthone, 2-methylthioxanthone, 2-ethylthioxanthone, 2-chlorothioxanthone, 2-isopropylthioxanthone, 2,4-diethyl
  • the content of the radical polymerization initiator is preferably 0.01 to 20 parts by weight, more preferably 0.1 to 10 parts by weight with respect to 100 parts of the radical polymerizable compound. .
  • the energy ray-curable composition of the present invention comprises a cationically polymerizable compound, a photoacid generator, and, if necessary, a uniform additive at room temperature (about 20 to 30 ° C.) or optionally heated (about 40 to 90 ° C.). Can be prepared by kneading with three rolls or the like.
  • the energy ray-curable composition of the present invention can be cured by irradiating energy rays to obtain a cured product.
  • any energy ray may be used as long as it has energy that induces the decomposition of the sulfonium salt of the present invention, but low pressure, medium pressure, high pressure or ultrahigh pressure mercury lamp, metal halide lamp, LED lamp, xenon lamp, carbon arc lamp, Energy rays in the ultraviolet to visible light region (wavelength: about 100 to about 800 nm) obtained from a fluorescent lamp, a semiconductor solid state laser, an argon laser, a He—Cd laser, a KrF excimer laser, an ArF excimer laser, or an F 2 laser are preferable.
  • the radiation which has high energy such as an electron beam or an X-ray, can also be used for an energy beam.
  • the irradiation time of the energy beam is affected by the energy beam intensity and the energy beam permeability to the energy beam curable composition, but about 0.1 to 10 seconds is sufficient at room temperature (about 20 to 30 ° C). It is. However, it may be preferable to spend more time when energy beam permeability is low or when the energy beam curable composition is thick.
  • Most energy ray-curable compositions are cured by cationic polymerization within 0.1 seconds to several minutes after irradiation with energy rays, but if necessary, after irradiation with energy rays, room temperature (about 20 to 30 ° C.) to 150 It is also possible to carry out after-curing by heating at a temperature of several seconds to several hours.
  • Specific applications of the energy ray-curable composition of the present invention include paints, coating agents, various coating materials (hard coat, anti-stain coating, anti-fogging coating, touch-resistant coating, optical fiber, etc.), adhesive tape Back surface treatment agent, Release coating material for adhesive labels (release paper, release plastic film, release metal foil, etc.), printing plate, dental materials (dental compound, dental composite, etc.), ink, inkjet ink , Positive resist (used for forming connection terminals and wiring patterns for manufacturing electronic parts such as circuit boards, CSPs, MEMS elements, etc.), resist films, liquid resists, negative resists (surface protective films for semiconductor elements, interlayer insulation films) ), MEMS resist, positive photosensitive material, negative photosensitive material, various adhesives (electrical materials) Temporary fixing agent for parts, HDD adhesive, pickup lens adhesive, FPD functional film (deflection plate, antireflection film, etc.), holographic resin, FPD material (color filter, black matrix, (Partition materials, photo spacers, ribs, alignment films
  • optical members molding materials (for building materials, optical components, lenses, etc.), casting materials, putty, glass fiber Examples thereof include an impregnating agent, a sealing material, a sealing material, a sealing material, an optical semiconductor (LED) sealing material, an optical waveguide material, a nanoimprint material, an optical fabrication material, and a micro stereolithography material.
  • an impregnating agent e.g., a sealing material, a sealing material, an optical semiconductor (LED) sealing material, an optical waveguide material, a nanoimprint material, an optical fabrication material, and a micro stereolithography material.
  • LED optical semiconductor
  • the sulfonium salt of the present invention generates a strong acid upon irradiation with light
  • light for chemically amplified resist materials known in the art JP 2003-267968, JP 2003-261529, JP 2002-193925, etc.
  • It can also be used as an acid generator.
  • Chemically amplified resist materials include: (1) a two-component chemically amplified positive resist containing, as essential components, a resin that is soluble in an alkali developer by the action of an acid and a photoacid generator; and (2) an alkali developer. Soluble resin, a three-component chemical amplification type positive resist containing, as essential components, a dissolution inhibitor and a photoacid generator that are soluble in an alkali developer by the action of an acid, and (3) suitable for an alkali developer.
  • a chemically amplified negative resist containing a crosslinking agent that crosslinks the resin by heat treatment in the presence of a soluble resin and an acid and makes the resin insoluble in an alkaline developer and a photoacid generator as an essential component is included.
  • part means “part by weight”
  • % means “% by weight”.
  • Production Example 2 Production of a mixture of [4- (phenylthio) phenyl] phenyl sulfide and [4- (phenylthio) phenyl] phenyl sulfoxide-2 A brown liquid [4- (phenylthio) phenyl] phenyl sulfide was obtained in an amount of 37.3% and [4] in the same manner as in Production Example 1, except that 2.31 parts of 30% hydrogen peroxide aqueous solution was changed to 2.37 parts. 9.8 parts of a mixture containing 62.7% of-(phenylthio) phenyl] phenyl sulfoxide was obtained.
  • Production Example 3 Production of a mixture of [4- (phenylthio) phenyl] phenyl sulfide and [4- (phenylthio) phenyl] phenyl sulfoxide-3
  • the brown liquid [4- (phenylthio) phenyl] phenyl sulfide was changed to 42.2% and [4] in the same manner as in Production Example 1, except that 2.31 parts of 30% hydrogen peroxide aqueous solution was changed to 2.18 parts. 9.8 parts of a mixture containing 57.8% of-(phenylthio) phenyl] phenyl sulfoxide was obtained.
  • Production Example 5 Production of a mixture of [4-[(2-methyl) phenylthio] phenyl] (2-methylphenyl) sulfide and [4-[(2-methyl) phenylthio] phenyl] (2-methylphenyl) sulfoxide 1.
  • Production Example 6 Production of a mixture of [4-[(2-methoxy) phenylthio] phenyl] (2-methoxyphenyl) sulfide and [4-[(2-methoxy) phenylthio] phenyl] (2-methoxyphenyl) sulfoxide 1.
  • the product was identified by 1 H-NMR ⁇ d6-dimethylsulfoxide, ⁇ (ppm) 8.43 (1H, d), 8.25 (1H, s), 7.75-7.90 (3H, m ), 7.66 (1H, d), 7.60 (1H, t), 7.42-7.46 (5H, m) ⁇ .
  • reaction solution is cooled to room temperature (about 25 ° C.), poured into 100 parts of distilled water, extracted with 80 parts of dichloromethane, and until the pH of the aqueous layer becomes neutral. Washed with water.
  • the dichloromethane layer was transferred to a rotary evaporator and the solvent was distilled off to obtain a brown liquid product. After adding 5 parts of ethyl acetate and dissolving in a 60 ° C water bath, adding 50 parts of hexane and stirring, let stand for 30 minutes in a refrigerator (about 5 ° C) and then remove the supernatant twice. And the product was washed.
  • phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium triflate trifluoromethanesulfonic acid anion
  • triflate trifluoromethanesulfonic acid anion
  • 1,4 4.9 parts of a mixture of -bis ⁇ 4-[[4- (phenylthio) phenylphenyl] sulfonio] phenylthio ⁇ benzene bis (triflate) was obtained.
  • Example 1 Except that “10% tris (pentafluoroethyl) potassium trifluorophosphate aqueous solution 52.7 parts” was changed to “10% tetrakis (pentafluorophenyl) lithium borate aqueous solution 74.6 parts”, the same procedure as in Example 1 was performed.
  • Example 7 Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (c)] and 1,4-bis ⁇ 4-[[4- (phenylthio) phenylphenyl Sulphonio] phenylthio ⁇ benzene Preparation of a mixture of bis [tetrakis (pentafluorophenyl) borate] [compound (d)]-3 Except that “10% tris (pentafluoroethyl) potassium trifluorophosphate aqueous solution 52.7 parts” was changed to “10% tetrakis (pentafluorophenyl) lithium borate aqueous solution 74.6 parts”, the same procedure as in Example 3 was performed.
  • Example 8 Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (c)] and 1,4-bis ⁇ 4-[[4- (phenylthio) phenylphenyl Sulphonio] phenylthio ⁇ benzene Preparation of a mixture of bis [tetrakis (pentafluorophenyl) borate] [compound (d)]-4 Except that “10% tris (pentafluoroethyl) potassium trifluorophosphate aqueous solution 52.7 parts” was changed to “10% tetrakis (pentafluorophenyl) lithium borate aqueous solution 74.6 parts”, the same procedure as in Example 4 was performed.
  • the sulfonium salt obtained in Example 10 and Comparative Example 1 is hexafluorophosphate, and tris (pentafluoroethyl) trifluorophosphoric acid obtained in Examples 1 to 9, 11 to 15 and Comparative Examples 2 to 5 was used.
  • Incorporation of sulfonium salt due to weaker acid strength and lower activity against cationic polymerization than acid salt, hexafluoroantimonate, tetrakis (pentafluorophenyl) borate and tris (trifluoromethanesulfonyl) methide salt Increased the amount.
  • the curable composition obtained above was applied to a polyethylene terephthalate (PET) film with an applicator (40 ⁇ m).
  • PET film was irradiated with ultraviolet light having a wavelength limited by a filter using an ultraviolet irradiation device.
  • the filter used was a 365 filter (manufactured by Eye Graphics Co., Ltd., a filter that cuts light of less than 365 nm) and L-34 (manufactured by Kenko Optical Co., Ltd., a filter that cuts light of less than 340 nm).
  • the film hardness after 40 minutes was measured by pencil hardness (JIS K5600-5-4: 1999) and evaluated according to the following criteria (coating thickness after curing was about 40 ⁇ m). It was shown in 2.
  • Pencil hardness is 2H or more
  • Pencil hardness is H to B
  • Pencil hardness is 2B-4B
  • Ultraviolet light irradiation conditions ⁇ Ultraviolet irradiation device: Belt conveyor type UV irradiation device (manufactured by Eye Graphics Co., Ltd.) ⁇ Lamp: 1.5kW high pressure mercury lamp ⁇ Filter: 365 filter (manufactured by Eye Graphics Co., Ltd.) L-34 (manufactured by Kenko Optical Co., Ltd.) Illuminance (measured with a 365 nm head illuminometer): 145 mW / cm 2
  • Condition-1 200 mJ / cm 2
  • Condition-2 400 mJ / cm 2
  • Condition-3 600 mJ / cm 2
  • the sulfonium salt of the present invention was superior in curing performance (photosensitivity) of the cationically polymerizable compound under ultraviolet light of 365 nm or more as compared with the comparative sulfonium salt. Moreover, it turned out that storage stability worsens, when the ratio of the sulfonium salt shown by Formula (2) increases.
  • the sulfonium salt of the present invention comprises a coating material, a coating agent, various coating materials (hard coat, antifouling coating material, antifogging coating material, touchproof coating material, optical fiber, etc.), a back surface treatment agent for adhesive tape, and a release sheet for an adhesive label.
  • Release coating materials release paper, release plastic film, release metal foil, etc.
  • printing plates dental materials (dental compounds, dental composites, etc.), inks, inkjet inks, positive resists (circuit boards, CSP, Used for connecting terminals and wiring patterns for manufacturing electronic components such as MEMS elements), resist films, liquid resists, negative resists (formation of permanent films such as surface protective films for semiconductor elements, interlayer insulating films, planarization films, etc.) ), MEMS resist, positive photosensitive material, negative photosensitive material, various adhesives (temporary fixing agent for various electronic parts, adhesion for HDD) , Pickup lens adhesive, FPD functional film (deflection plate, antireflection film, etc.), holographic resin, FPD material (color filter, black matrix, partition material, photospacer, rib, liquid crystal Used for forming alignment films and sealing agents for FPDs, etc.), optical members, molding materials (for building materials, optical components, lenses, etc.), casting materials, putty, glass fiber impregnating agents, sealing

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Abstract

Disclosed is an acid generator which contains a sulfonium salt having high i-line photosensitivity, excellent compatibility with cationically polymerizable compounds and excellent post-formulation storage stability. A photoacid generator comprises formula (1) and formula (2). (R1-R9 represent an alkyl, a hydroxyl, an alkoxyl, an alkylcarbonyl, an arylcarbonyl, an alkoxycarbonyl, an aryloxycarbonyl, an arylthiocarbonyl, an acyloxy, an arylthio, an alkylthio, an aryl, a heterocyclic hydrocarbon group, an aryloxy, an alkylsulfinyl, an arylsulfinyl, an alkylsulfonyl, an arylsulfonyl, a hydroxy(poly)alkyleneoxy, an optionally substituted amino, a cyano, a nitro, or a halogen, m1-m9 each represent the number of groups R1-R9, A1 represents S or SO, and X¯ represents a monovalent polyatomic anion.)

Description

光酸発生剤,光硬化性組成物,及びその硬化体Photoacid generator, photocurable composition, and cured product thereof
 本発明は,光酸発生剤,硬化性組成物及びその硬化体に関する。より詳しくは,本発明は,光,電子線又はX線等の活性エネルギー線を作用させてカチオン重合性化合物を硬化する際に好適な特定のスルホニウム塩を含有する光酸発生剤,当該光酸発生剤を含有する硬化性組成物,及び当該硬化性組成物を硬化することにより得られる硬化体に関する。 The present invention relates to a photoacid generator, a curable composition, and a cured product thereof. More specifically, the present invention relates to a photoacid generator containing a specific sulfonium salt suitable for curing a cationically polymerizable compound by acting an active energy ray such as light, electron beam or X-ray, The present invention relates to a curable composition containing a generator and a cured product obtained by curing the curable composition.
 従来,光,電子線又はX線等の活性エネルギー線を作用させてエポキシ化合物等のカチオン重合性化合物を硬化する際に使用する光酸発生剤として,トリアリールスルホニウム塩(特許文献1),ナフタレン骨格を有するフェナシルスルホニウム塩(特許文献2),ジアルキルベンジルスルホニウム塩(特許文献3)及びチオキサントン骨格を導入したスルホニウム塩(特許文献4),及びポリアリールスルフィド骨格を有したスルホニウム塩(特許文献5)が知られている。 Conventionally, as a photoacid generator for use in curing a cationically polymerizable compound such as an epoxy compound by applying an active energy ray such as light, electron beam or X-ray, a triarylsulfonium salt (Patent Document 1), naphthalene Phenacylsulfonium salts having a skeleton (Patent Document 2), dialkylbenzylsulfonium salts (Patent Document 3), sulfonium salts having a thioxanthone skeleton (Patent Document 4), and sulfonium salts having a polyarylsulfide skeleton (Patent Document 5) )It has been known.
 現在,フォトレジストを用いるフォトリソグラフィー工程において,露光光として波長365nmのi線が広く用いられている。その理由に,照射光源として,廉価でありながら良好な発光強度を示す中圧・高圧水銀灯が利用できることがあり,また,i線領域(360nm~390nm)に発光波長があるLEDランプが近年普及しつつあることも挙げられる。したがって,i線に対し高い感応性を示す光酸発生剤の必要性は,今後更に高まって行くと考えられる。
 しかしながら,既存の光酸発生剤のうち,トリアリールスルホニウム塩(特許文献1),ナフタレン骨格を有するフェナシルスルホニウム塩(特許文献2)及びジアルキルベンジルスルホニウム塩(特許文献3)は,i線に対する感応性が低いため,感応性を高めるには増感剤の併用が必要となる。また,チオキサントン骨格を導入したスルホニウム塩(特許文献4)は,i線に対し吸収率が大きすぎ,そのため,厚膜硬化時に深部まで光が通らずに硬化不良が生じる,という問題がある。また,ポリアリールスルフィド骨格を有するスルホニウム塩(特許文献5)は,水銀灯照射に対する光酸発生剤としての有効性については記載されているものの,i線に対する感度については開示されてない。
Currently, i-line having a wavelength of 365 nm is widely used as exposure light in a photolithography process using a photoresist. For this reason, an inexpensive medium-pressure / high-pressure mercury lamp that exhibits good emission intensity can be used as an irradiation light source, and LED lamps having an emission wavelength in the i-line region (360 nm to 390 nm) have recently become widespread. It can also be mentioned. Therefore, the need for a photoacid generator exhibiting high sensitivity to i-line is expected to increase further in the future.
However, among existing photoacid generators, triarylsulfonium salts (Patent Document 1), phenacylsulfonium salts having a naphthalene skeleton (Patent Document 2) and dialkylbenzylsulfonium salts (Patent Document 3) are sensitive to i-line. Because of its low nature, it is necessary to use a sensitizer together to increase sensitivity. In addition, the sulfonium salt having a thioxanthone skeleton introduced therein (Patent Document 4) has a problem that the absorption rate is too large for i-line, and therefore, light curing does not pass to the deep part during thick film curing, resulting in a problem of poor curing. Moreover, although the sulfonium salt (Patent Document 5) having a polyarylsulfide skeleton is described as being effective as a photoacid generator for mercury lamp irradiation, it is not disclosed for sensitivity to i-line.
特開昭50-151997号公報Japanese Patent Laid-Open No. 50-151997 特開平9-118663号公報JP-A-9-118663 特開平2-178303号公報JP-A-2-178303 特開平8-165290号公報JP-A-8-165290 特開昭61-100557号公報JP-A-61-100557
 上記の背景において,本発明の目的は,i線に高い光感応性を有し,かつエポキシ化合物等のカチオン重合性化合物への相溶性が高く,エポキシ化合物等のカチオン重合性化合物との配合物において貯蔵安定性の優れた,スルホニウム塩を含んでなる新たな酸発生剤を提供することである。 In the above background, the object of the present invention is to provide a compound with a cationically polymerizable compound such as an epoxy compound having high photosensitivity to i-line and high compatibility with a cationically polymerizable compound such as an epoxy compound. It is an object of the present invention to provide a new acid generator comprising a sulfonium salt having excellent storage stability.
 本発明者は,特定のスルホニウム塩の混合物が上記目的に好適であることを見出し,更に検討を重ねて本発明を完成させた。すなわち,本発明は,下記式(1)で示されるスルホニウム塩及び下記式(2)で示されるスルホニウム塩を提供する。 The present inventor has found that a mixture of a specific sulfonium salt is suitable for the above purpose, and has further studied and completed the present invention. That is, the present invention provides a sulfonium salt represented by the following formula (1) and a sulfonium salt represented by the following formula (2).
Figure JPOXMLDOC01-appb-C000004
 
Figure JPOXMLDOC01-appb-C000004
 
Figure JPOXMLDOC01-appb-C000005
 
Figure JPOXMLDOC01-appb-C000005
 
〔式(1)及び(2)中,R~Rは,互いに独立して,アルキル基(本明細書において,「シクロアルキル基」も包含する。),ヒドロキシル基,アルコキシル基,アルキルカルボニル基,アリールカルボニル基,アルコキシカルボニル基,アリールオキシカルボニル基,アリールチオカルボニル基,アシロキシ基,アリールチオ基,アルキルチオ基,アリール基,複素環式炭化水素基,アリールオキシ基,アルキルスルフィニル基,アリールスルフィニル基,アルキルスルホニル基,アリールスルホニル基,ヒドロキシ(ポリ)アルキレンオキシ基,置換されていてよいアミノ基,シアノ基,ニトロ基又はハロゲン原子を表し,m~m,はそれぞれR~Rの個数を表し,m,m,m及びmは0~5の整数を,m,m,m,m及びmは0~4の整数を表し,AはSまたはSOを,Xは一価の多原子アニオンを表す。〕 [In the formulas (1) and (2), R 1 to R 9 are independently of each other an alkyl group (including a “cycloalkyl group” in this specification), a hydroxyl group, an alkoxyl group, an alkylcarbonyl group. Group, arylcarbonyl group, alkoxycarbonyl group, aryloxycarbonyl group, arylthiocarbonyl group, acyloxy group, arylthio group, alkylthio group, aryl group, heterocyclic hydrocarbon group, aryloxy group, alkylsulfinyl group, arylsulfinyl group , An alkylsulfonyl group, an arylsulfonyl group, a hydroxy (poly) alkyleneoxy group, an optionally substituted amino group, a cyano group, a nitro group, or a halogen atom, and m 1 to m 9 are R 1 to R 9 , respectively. Represents the number, m 4 , m 6 , m 7 and m 9 are integers from 0 to 5 , M 1 , m 2 , m 3 , m 5 and m 8 represent an integer of 0 to 4, A 1 represents S or SO, and X represents a monovalent polyatomic anion. ]
 また,本発明は,上記式(1)で示されるスルホニウム塩と式(2)中で示されるスルホニウム塩とを含有することを特徴とする光酸発生剤をも提供する。 The present invention also provides a photoacid generator characterized by containing a sulfonium salt represented by the above formula (1) and a sulfonium salt represented by the formula (2).
 また,本発明は,上記光酸発生剤とカチオン重合性化合物とを含有することを特徴とするエネルギー線硬化性組成物をも提供する。 The present invention also provides an energy beam curable composition comprising the photoacid generator and a cationically polymerizable compound.
 更には,本発明は,上記エネルギー線硬化性組成物を硬化させて得られる硬化体をも提供する。 Furthermore, the present invention also provides a cured product obtained by curing the energy beam curable composition.
 本発明のスルホニウム塩は,可視光,紫外線,電子線及びX線等の活性エネルギー線に対する光感応性に優れ,エポキシ化合物等のカチオン重合性化合物への相溶性が高く,エポキシ化合物等のカチオン重合性化合物との配合物において貯蔵安定性が優れる。
 本発明の光酸発生剤は,カチオン重合性化合物の硬化に用いるとき,紫外光,特にi線の作用による硬化性に優れており,増感剤を用いなくても,カチオン重合性化合物を硬化させることができる。本発明の光酸発生剤はまた,厚膜硬化性にも優れている。
 本発明のエネルギー線硬化性組成物は,上記の光酸発生剤を含有するため,紫外光で硬化させることができる。また,本発明のエネルギー線硬化性組成物は,貯蔵安定性が高く,増感剤を用いる必要がないことから,コスト及び作業性に優れる。
 本発明の硬化体は,増感剤を用いずに得ることができるため,増感剤の残存に起因する着色や劣化という問題がない。
The sulfonium salt of the present invention has excellent photosensitivity to active energy rays such as visible light, ultraviolet rays, electron beams and X-rays, has high compatibility with cationically polymerizable compounds such as epoxy compounds, and cationic polymerization of epoxy compounds and the like. Storage stability is excellent in a blend with a functional compound.
The photoacid generator of the present invention is excellent in curability by the action of ultraviolet light, particularly i-ray, when used for curing a cationically polymerizable compound, and cures a cationically polymerizable compound without using a sensitizer. Can be made. The photoacid generator of the present invention is also excellent in thick film curability.
Since the energy beam curable composition of the present invention contains the above-mentioned photoacid generator, it can be cured with ultraviolet light. In addition, the energy ray-curable composition of the present invention has high storage stability and does not require the use of a sensitizer, and thus is excellent in cost and workability.
Since the cured product of the present invention can be obtained without using a sensitizer, there is no problem of coloring or deterioration caused by the remaining sensitizer.
 したがって,本発明のスルホニウム塩は,塗料,コーティング剤,各種被覆材料(ハードコート,耐汚染被覆材,防曇被覆材,耐触被覆材,光ファイバー等),粘着テープの背面処理剤,粘着ラベル用剥離シート(剥離紙,剥離プラスチックフィルム,剥離金属箔等)の剥離コーティング材,印刷板,歯科用材料(歯科用配合物,歯科用コンポジット等),インキ,インクジェットインキ,ポジ型レジスト(回路基板,CSP,MEMS素子等の電子部品製造の接続端子や配線パターン形成等に利用),レジストフィルム,液状レジスト,ネガ型レジスト(半導体素子等の表面保護膜,層間絶縁膜,平坦化膜等の永久膜形成等に利用),MEMS用レジスト,ポジ型感光性材料,ネガ型感光性材料,各種接着剤(各種電子部品用仮固定剤,HDD用接着剤,ピックアップレンズ用接着剤,FPD用機能性フィルム(偏向板,反射防止膜等)用接着剤等),ホログラフ用樹脂,FPD材料(カラーフィルター,ブラックマトリックス,隔壁材料,ホトスペーサー,リブ,液晶用配向膜等の形成とFPD用シール剤等に利用),光学部材,成形材料(建築材料用,光学部品,レンズ等),注型材料,パテ,ガラス繊維含浸剤,目止め材,シーリング材,封止材,光半導体(LED)封止材,光導波路材料,ナノインプリント材料,光造用,及びマイクロ光造形用材料等に用いられる光酸発生剤として,好適である。また,本発明のエネルギー線硬化性組成物及び硬化体は,上記の用途に好適である。 Therefore, the sulfonium salt of the present invention is used for paints, coating agents, various coating materials (hard coat, anti-fouling coating materials, anti-fogging coating materials, touch-proof coating materials, optical fibers, etc.), back surface treatment agents for adhesive tapes, and adhesive labels. Release coating materials for release sheets (release paper, release plastic films, release metal foils, etc.), printing plates, dental materials (dental compounds, dental composites, etc.), inks, inkjet inks, positive resists (circuit boards, Used for connection terminals and wiring pattern formation in the manufacture of electronic components such as CSP and MEMS elements), resist films, liquid resists, negative resists (permanent films such as surface protective films for semiconductor elements, interlayer insulating films, planarization films, etc.) Used for forming), MEMS resist, positive photosensitive material, negative photosensitive material, various adhesives (temporary fixing agent for various electronic components, DD adhesive, pickup lens adhesive, FPD functional film (deflection plate, antireflection film, etc.), holographic resin, FPD material (color filter, black matrix, partition material, photospacer, Rib, formation of alignment film for liquid crystal, and sealant for FPD), optical member, molding material (for building materials, optical parts, lenses, etc.), casting material, putty, glass fiber impregnating agent, sealing material It is suitable as a photoacid generator for use in sealing materials, sealing materials, optical semiconductor (LED) sealing materials, optical waveguide materials, nanoimprint materials, photofabrication materials, and micro stereolithography materials. Moreover, the energy beam curable composition and the cured product of the present invention are suitable for the above applications.
 式(1)及び(2)において,R~Rのうち,アルキル基としては,炭素数1~18の直鎖アルキル基(メチル,エチル,n-プロピル,n-ブチル,n-ペンチル,n-オクチル,n-デシル,n-ドデシル,n-テトラデシル,n-ヘキサデシル及びn-オクタデシル等),炭素数3~18の分枝鎖アルキル基(イソプロピル,イソブチル,sec-ブチル,tert-ブチル,イソペンチル,ネオペンチル,tert-ペンチル,イソヘキシル及びイソオクタデシル),及び炭素数3~18のシクロアルキル基(シクロプロピル,シクロブチル,シクロペンチル,シクロヘキシル及び4-デシルシクロヘキシル等)等が挙げられる。これらのうち,特に好ましいのは,メチル基である。 In the formulas (1) and (2), among R 1 to R 9 , the alkyl group is a linear alkyl group having 1 to 18 carbon atoms (methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-octyl, n-decyl, n-dodecyl, n-tetradecyl, n-hexadecyl, n-octadecyl, etc.), a branched alkyl group having 3 to 18 carbon atoms (isopropyl, isobutyl, sec-butyl, tert-butyl, Isopentyl, neopentyl, tert-pentyl, isohexyl and isooctadecyl), and cycloalkyl groups having 3 to 18 carbon atoms (such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl and 4-decylcyclohexyl). Of these, a methyl group is particularly preferred.
 R~Rのうち,アルコキシル基としては,炭素数1~18の直鎖アルコキシル基又は炭素数3~18の分枝鎖アルコキシル基(メトキシ,エトキシ,プロポキシ,イソプロポキシ,ブトキシ,イソブトキシ,sec-ブトキシ,tert-ブトキシ,ヘキシルオキシ,デシルオキシ,ドデシルオキシ及びオクタデシルオキシ等)等が挙げられる。これらのうち,特に好ましいのは,メトキシ基である。 Among R 1 to R 9 , the alkoxyl group includes a straight-chain alkoxyl group having 1 to 18 carbon atoms or a branched alkoxyl group having 3 to 18 carbon atoms (methoxy, ethoxy, propoxy, isopropoxy, butoxy, isobutoxy, sec -Butoxy, tert-butoxy, hexyloxy, decyloxy, dodecyloxy, octadecyloxy, etc.). Of these, a methoxy group is particularly preferred.
 R~Rのうち,アルキルカルボニル基としては,炭素数2~18の直鎖アルキルカルボニル基又は炭素数4~18の分枝鎖アルキルカルボニル基(アセチル,プロピオニル,ブタノイル,2-メチルプロピオニル,ヘプタノイル,2-メチルブタノイル,3-メチルブタノイル,オクタノイル,デカノイル,ドデカノイル及びオクタデカノイル等)等が挙げられる。これらのうち,特に好ましいのは,アセチル基である。 Among R 1 to R 9 , the alkylcarbonyl group includes a linear alkylcarbonyl group having 2 to 18 carbon atoms or a branched alkylcarbonyl group having 4 to 18 carbon atoms (acetyl, propionyl, butanoyl, 2-methylpropionyl, Heptanoyl, 2-methylbutanoyl, 3-methylbutanoyl, octanoyl, decanoyl, dodecanoyl, octadecanoyl, etc.). Of these, an acetyl group is particularly preferred.
 R~Rのうち,アリールカルボニル基としては,炭素数7~11のアリールカルボニル基(ベンゾイル及びナフトイル等)等が挙げられる。 Among R 1 to R 9 , examples of the arylcarbonyl group include arylcarbonyl groups having 7 to 11 carbon atoms (such as benzoyl and naphthoyl).
 R~Rのうち,アルコキシカルボニル基としては,炭素数2~19の直鎖アルコキシカルボニル基又は炭素数4~19の分枝鎖アルコキシカルボニル基(メトキシカルボニル,エトキシカルボニル,プロポキシカルボニル,イソプロポキシカルボニル,ブトキシカルボニル,イソブトキシカルボニル,sec-ブトキシカルボニル,tert-ブトキシカルボニル,オクチロキシカルボニル,テトラデシルオキシカルボニル及びオクタデシロキシカルボニル等)等が挙げられる。 Among R 1 to R 9 , the alkoxycarbonyl group is a straight-chain alkoxycarbonyl group having 2 to 19 carbon atoms or a branched alkoxycarbonyl group having 4 to 19 carbon atoms (methoxycarbonyl, ethoxycarbonyl, propoxycarbonyl, isopropoxy Carbonyl, butoxycarbonyl, isobutoxycarbonyl, sec-butoxycarbonyl, tert-butoxycarbonyl, octyloxycarbonyl, tetradecyloxycarbonyl, octadecyloxycarbonyl, etc.).
 R~Rのうち,アリールオキシカルボニル基としては,炭素数7~11のアリールオキシカルボニル基(フェノキシカルボニル及びナフトキシカルボニル等)等が挙げられる。 Among R 1 to R 9 , examples of the aryloxycarbonyl group include aryloxycarbonyl groups having 7 to 11 carbon atoms (such as phenoxycarbonyl and naphthoxycarbonyl).
 R~Rのうち,アリールチオカルボニル基としては,炭素数7~11のアリールチオカルボニル基(フェニルチオカルボニル及びナフトキシチオカルボニル等)等が挙げられる。 Among R 1 to R 9 , examples of the arylthiocarbonyl group include arylthiocarbonyl groups having 7 to 11 carbon atoms (such as phenylthiocarbonyl and naphthoxythiocarbonyl).
 R~Rのうち,アシロキシ基としては,炭素数2~19の直鎖アシロキシ基又は炭素数4~19の分枝鎖アシロキシ基(アセトキシ,エチルカルボニルオキシ,プロピルカルボニルオキシ,イソプロピルカルボニルオキシ,ブチルカルボニルオキシ,イソブチルカルボニルオキシ,sec-ブチルカルボニルオキシ,tert-ブチルカルボニルオキシ,オクチルカルボニルオキシ,テトラデシルカルボニルオキシ及びオクタデシルカルボニルオキシ等)等が挙げられる。 Among R 1 to R 9 , the acyloxy group includes a straight-chain acyloxy group having 2 to 19 carbon atoms or a branched acyloxy group having 4 to 19 carbon atoms (acetoxy, ethylcarbonyloxy, propylcarbonyloxy, isopropylcarbonyloxy, Butylcarbonyloxy, isobutylcarbonyloxy, sec-butylcarbonyloxy, tert-butylcarbonyloxy, octylcarbonyloxy, tetradecylcarbonyloxy, octadecylcarbonyloxy and the like.
 R~Rのうち,アリールチオ基としては,炭素数6~20のアリールチオ基(フェニルチオ,2-メチルフェニルチオ,3-メチルフェニルチオ,4-メチルフェニルチオ,2-クロロフェニルチオ,3-クロロフェニルチオ,4-クロロフェニルチオ,2-ブロモフェニルチオ,3-ブロモフェニルチオ,4-ブロモフェニルチオ,2-フルオロフェニルチオ,3-フルオロフェニルチオ,4-フルオロフェニルチオ,2-ヒドロキシフェニルチオ,4-ヒドロキシフェニルチオ,2-メトキシフェニルチオ,4-メトキシフェニルチオ,1-ナフチルチオ,2-ナフチルチオ,4-[4-(フェニルチオ)ベンゾイル]フェニルチオ,4-[4-(フェニルチオ)フェノキシ]フェニルチオ,4-[4-(フェニルチオ)フェニル]フェニルチオ,4-(フェニルチオ)フェニルチオ,4-ベンゾイルフェニルチオ,4-ベンゾイル-2-クロロフェニルチオ,4-ベンゾイル-3-クロロフェニルチオ,4-ベンゾイル-3-メチルチオフェニルチオ,4-ベンゾイル-2-メチルチオフェニルチオ,4-(4-メチルチオベンゾイル)フェニルチオ,4-(2-メチルチオベンゾイル)フェニルチオ,4-(p-メチルベンゾイル)フェニルチオ,4-(p-エチルベンゾイル)フェニルチオ4-(p-イソプロピルベンゾイル)フェニルチオ及び4-(p-tert-ブチルベンゾイル)フェニルチオ等)等が挙げられる。 Among R 1 to R 9 , the arylthio group is an arylthio group having 6 to 20 carbon atoms (phenylthio, 2-methylphenylthio, 3-methylphenylthio, 4-methylphenylthio, 2-chlorophenylthio, 3-chlorophenyl. Thio, 4-chlorophenylthio, 2-bromophenylthio, 3-bromophenylthio, 4-bromophenylthio, 2-fluorophenylthio, 3-fluorophenylthio, 4-fluorophenylthio, 2-hydroxyphenylthio, 4 -Hydroxyphenylthio, 2-methoxyphenylthio, 4-methoxyphenylthio, 1-naphthylthio, 2-naphthylthio, 4- [4- (phenylthio) benzoyl] phenylthio, 4- [4- (phenylthio) phenoxy] phenylthio, 4 -[4- (Phenylthio) phenyl Phenylthio, 4- (phenylthio) phenylthio, 4-benzoylphenylthio, 4-benzoyl-2-chlorophenylthio, 4-benzoyl-3-chlorophenylthio, 4-benzoyl-3-methylthiophenylthio, 4-benzoyl-2-methylthio Phenylthio, 4- (4-methylthiobenzoyl) phenylthio, 4- (2-methylthiobenzoyl) phenylthio, 4- (p-methylbenzoyl) phenylthio, 4- (p-ethylbenzoyl) phenylthio 4- (p-isopropylbenzoyl) Phenylthio and 4- (p-tert-butylbenzoyl) phenylthio) and the like.
 R~Rのうち,アルキルチオ基としては,炭素数1~18の直鎖アルキルチオ基又は炭素数3~18の分枝鎖アルキルチオ基(メチルチオ,エチルチオ,プロピルチオ,イソプロピルチオ,ブチルチオ,イソブチルチオ,sec-ブチルチオ,tert-ブチルチオ,ペンチルチオ,イソペンチルチオ,ネオペンチルチオ,tert-ペンチルチオ,オクチルチオ,デシルチオ,ドデシルチオ及びイソオクタデシルチオ等)等が挙げられる。 Among R 1 to R 9 , the alkylthio group includes a linear alkylthio group having 1 to 18 carbon atoms or a branched alkylthio group having 3 to 18 carbon atoms (methylthio, ethylthio, propylthio, isopropylthio, butylthio, isobutylthio, sec-butylthio, tert-butylthio, pentylthio, isopentylthio, neopentylthio, tert-pentylthio, octylthio, decylthio, dodecylthio, isooctadecylthio and the like.
 R~Rのうち,アリール基としては,炭素数6~10のアリール基(フェニル,トリル,ジメチルフェニル及びナフチル等)等が挙げられる。 Among R 1 to R 9 , examples of the aryl group include aryl groups having 6 to 10 carbon atoms (such as phenyl, tolyl, dimethylphenyl, and naphthyl).
 R~Rのうち,複素環式炭化水素基としては,炭素数4~20の複素環式炭化水素基(チエニル,フラニル,ピラニル,ピロリル,オキサゾリル,チアゾリル,ピリジル,ピリミジル,ピラジニル,インドリル,ベンゾフラニル,ベンゾチエニル,キノリル,イソキノリル,キノキサリニル,キナゾリニル,カルバゾリル,アクリジニル,フェノチアジニル,フェナジニル,キサンテニル,チアントレニル,フェノキサジニル,フェノキサチイニル,クロマニル,イソクロマニル,ジベンゾチエニル,キサントニル,チオキサントニル及びジベンゾフラニル等)等が挙げられる。 Among R 1 to R 9 , the heterocyclic hydrocarbon group includes a heterocyclic hydrocarbon group having 4 to 20 carbon atoms (thienyl, furanyl, pyranyl, pyrrolyl, oxazolyl, thiazolyl, pyridyl, pyrimidyl, pyrazinyl, indolyl, Benzofuranyl, benzothienyl, quinolyl, isoquinolyl, quinoxalinyl, quinazolinyl, carbazolyl, acridinyl, phenothiazinyl, phenazinyl, xanthenyl, thianthenyl, phenoxazinyl, phenoxathinyl, chromanyl, isochromanyl, dibenzothienyl, xanthonyl, thioxanthonyl, etc. Is mentioned.
 R~Rのうち,アリールオキシ基としては,炭素数6~10のアリールオキシ基(フェノキシ及びナフチルオキシ等)等が挙げられる。 Among R 1 to R 9 , examples of the aryloxy group include aryloxy groups having 6 to 10 carbon atoms (such as phenoxy and naphthyloxy).
 R~Rのうち,アルキルスルフィニル基としては,炭素数1~18の直鎖アルキルスルフィニル基又は炭素数3~18の分枝鎖アルキルスルフィニル基(メチルスルフィニル,エチルスルフィニル,プロピルスルフィニル,イソプロピルスルフィニル,ブチルスルフィニル,イソブチルスルフィニル,sec-ブチルスルフィニル,tert-ブチルスルフィニル,ペンチルスルフィニル,イソペンチルスルフィニル,ネオペンチルスルフィニル,tert-ペンチルスルフィニル,オクチルスルフィニル及びイソオクタデシルスルフィニル等)等が挙げられる。 Among R 1 to R 9 , the alkylsulfinyl group is a linear alkylsulfinyl group having 1 to 18 carbon atoms or a branched alkylsulfinyl group having 3 to 18 carbon atoms (methylsulfinyl, ethylsulfinyl, propylsulfinyl, isopropylsulfinyl). , Butylsulfinyl, isobutylsulfinyl, sec-butylsulfinyl, tert-butylsulfinyl, pentylsulfinyl, isopentylsulfinyl, neopentylsulfinyl, tert-pentylsulfinyl, octylsulfinyl, isooctadecylsulfinyl and the like.
 R~Rのうち,アリールスルフィニル基としては,炭素数6~10のアリールスルフィニル基(フェニルスルフィニル,トリルスルフィニル及びナフチルスルフィニル等)等が挙げられる。 Among R 1 to R 9 , examples of the arylsulfinyl group include arylsulfinyl groups having 6 to 10 carbon atoms (such as phenylsulfinyl, tolylsulfinyl and naphthylsulfinyl).
 R~Rのうち,アルキルスルホニル基としては,炭素数1~18の直鎖アルキルスルホニル基又は炭素数3~18の分枝鎖アルキルスルホニル基(メチルスルホニル,エチルスルホニル,プロピルスルホニル,イソプロピルスルホニル,ブチルスルホニル,イソブチルスルホニル,sec-ブチルスルホニル,tert-ブチルスルホニル,ペンチルスルホニル,イソペンチルスルホニル,ネオペンチルスルホニル,tert-ペンチルスルホニル,オクチルスルホニル及びオクタデシルスルホニル等)等が挙げられる。 Among R 1 to R 9 , the alkylsulfonyl group is a straight-chain alkylsulfonyl group having 1 to 18 carbon atoms or a branched alkylsulfonyl group having 3 to 18 carbon atoms (methylsulfonyl, ethylsulfonyl, propylsulfonyl, isopropylsulfonyl). , Butylsulfonyl, isobutylsulfonyl, sec-butylsulfonyl, tert-butylsulfonyl, pentylsulfonyl, isopentylsulfonyl, neopentylsulfonyl, tert-pentylsulfonyl, octylsulfonyl, octadecylsulfonyl and the like.
 R~Rのうち,アリールスルホニル基としては,炭素数6~10のアリールスルホニル基(フェニルスルホニル,トリルスルホニル(トシル基)及びナフチルスルホニル等)等が挙げられる。 Among R 1 to R 9 , examples of the arylsulfonyl group include arylsulfonyl groups having 6 to 10 carbon atoms (phenylsulfonyl, tolylsulfonyl (tosyl group), naphthylsulfonyl, etc.) and the like.
 R~Rのうち,ヒドロキシ(ポリ)アルキレンオキシ基としては,式(3)で示されるヒドロキシ(ポリ)アルキレンオキシ基等が挙げられる。 Among R 1 to R 9 , examples of the hydroxy (poly) alkyleneoxy group include a hydroxy (poly) alkyleneoxy group represented by the formula (3).
Figure JPOXMLDOC01-appb-C000006
 
Figure JPOXMLDOC01-appb-C000006
 
〔AOはエチレンオキシ基及び/又はプロピレンオキシ基,qは1~5の整数を表す。〕 [AO represents an ethyleneoxy group and / or propyleneoxy group, and q represents an integer of 1 to 5. ]
 R~Rのうち,置換されていてよいアミノ基としては,アミノ基(-NH)及び炭素数1~15の,飽和炭化水素基又は芳香族基を含んでよい炭化水素基置換基で置換された置換アミノ基(メチルアミノ,ジメチルアミノ,エチルアミノ,メチルエチルアミノ,ジエチルアミノ,n-プロピルアミノ,メチル-n-プロピルアミノ,エチル-n-プロピルアミノ,n-プロピルアミノ,イソプロピルアミノ,イソプロピルメチルアミノ,イソプロピルエチルアミノ,ジイソプロピルアミノ,フェニルアミノ,ジフェニルアミノ,メチルフェニルアミノ,エチルフェニルアミノ,n-プロピルフェニルアミノ及びイソプロピルフェニルアミノ等)等が挙げられる。 Among R 1 to R 9, the optionally substituted amino group includes an amino group (—NH 2 ) and a hydrocarbon group substituent having 1 to 15 carbon atoms, which may include a saturated hydrocarbon group or an aromatic group. A substituted amino group substituted with (methylamino, dimethylamino, ethylamino, methylethylamino, diethylamino, n-propylamino, methyl-n-propylamino, ethyl-n-propylamino, n-propylamino, isopropylamino, Isopropylmethylamino, isopropylethylamino, diisopropylamino, phenylamino, diphenylamino, methylphenylamino, ethylphenylamino, n-propylphenylamino, isopropylphenylamino, etc.).
 R~Rのうち,ハロゲン原子基としては,フッ素原子,塩素原子,臭素原子及びヨウ素原子等が挙げられる。 Among R 1 to R 9 , examples of the halogen atom group include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
 R~Rは,相互に独立であり,従って,互いに同一でも異なっていてもよい。 R 1 to R 9 are independent of each other, and therefore may be the same as or different from each other.
 m~m,はそれぞれR~Rの個数を表し,m,m,m及びmは0~5の整数であり,好ましくは0~3,さらに好ましくは0~2,特に好ましくは0又は1であり,また,m,m,m,m及びmは0~4の整数であり,好ましくは0~3,さらに好ましくは0~2,特に好ましくは0又は1である。m~mがこれら好ましい範囲にあると,スルホニウム塩の光感応性がさらに良好となる。 m 1 to m 9 represent the numbers of R 1 to R 9 , respectively, and m 4 , m 6 , m 7 and m 9 are integers of 0 to 5, preferably 0 to 3, more preferably 0 to 2. , Particularly preferably 0 or 1, and m 1 , m 2 , m 3 , m 5 and m 8 are integers of 0 to 4, preferably 0 to 3, more preferably 0 to 2, particularly preferably. Is 0 or 1. When m 1 to m 6 are in these preferred ranges, the photosensitivity of the sulfonium salt is further improved.
 Aは,S(硫黄原子),SO(スルホキシド)を表す。それぞれのAは同一であっても異なっても良い。AがSの場合,スルホニウム塩の光感応性がさらに良好となるため好ましい。 A 1 represents S (sulfur atom) or SO (sulfoxide). Each A 1 may be the same or different. If A 1 is S, preferably the light sensitive sulfonium salt is further improved.
 本発明のスルホニウムのうち,下記構造のものが光感応性の点で特に好ましい。
Figure JPOXMLDOC01-appb-C000007
 
Among the sulfoniums of the present invention, those having the following structures are particularly preferred from the viewpoint of photosensitivity.
Figure JPOXMLDOC01-appb-C000007
Figure JPOXMLDOC01-appb-C000008
 
Figure JPOXMLDOC01-appb-C000008
 
Figure JPOXMLDOC01-appb-C000009
 
Figure JPOXMLDOC01-appb-C000009
 
Figure JPOXMLDOC01-appb-C000010
 
Figure JPOXMLDOC01-appb-C000010
 
Figure JPOXMLDOC01-appb-C000011
 
Figure JPOXMLDOC01-appb-C000011
 
 式(1)及び式(2)において,Xは,本発明のスルホニウム塩に活性エネルギー線(可視光,紫外線,電子線及びX線等)を照射することにより発生する酸(HX)に対応するアニオンである。Xは,一価の多原子アニオンであるということ以外には制限がないが,MY ,(Rf)PF6-b ,R10 BY4-c ,R10 GaY4-c ,R11SO ,(R11SO又は(R11SOで示されるアニオンが好ましい。 In Formula (1) and Formula (2), X corresponds to an acid (HX) generated by irradiating the sulfonium salt of the present invention with active energy rays (visible light, ultraviolet rays, electron beams, X-rays, etc.). An anion. X is not limited except that it is a monovalent polyatomic anion, but MY a , (Rf) b PF 6-b , R 10 c BY 4-c , R 10 c GaY 4 -c -, R 11 SO 3 - , (R 11 SO 2) 3 C - or (R 11 SO 2) 2 N - anion represented by are preferred.
 Mは,リン原子,ホウ素原子又はアンチモン原子を表す。
 Yはハロゲン原子(フッ素原子が好ましい。)を表す。
M represents a phosphorus atom, a boron atom, or an antimony atom.
Y represents a halogen atom (a fluorine atom is preferred).
 Rfは,水素原子の80モル%以上がフッ素原子で置換されたアルキル基(炭素数1~8のアルキル基が好ましい。)を表す。フッ素置換によりRfとするアルキル基としては,直鎖アルキル基(メチル,エチル,プロピル,ブチル,ペンチル及びオクチル等),分枝鎖アルキル基(イソプロピル,イソブチル,sec-ブチル及びtert-ブチル等)及びシクロアルキル基(シクロプロピル,シクロブチル,シクロペンチル及びシクロヘキシル等)等が挙げられる。Rfにおいてこれらのアルキル基の水素原子がフッ素原子に置換されている割合は,もとのアルキル基が有していた水素原子のモル数に基づいて,80モル%以上が好ましく,さらに好ましくは90%以上,特に好ましくは100%である。フッ素原子による置換割合がこれら好ましい範囲にあると,スルホニウム塩の光感応性がさらに良好となる。特に好ましいRfとしては,CF-,CFCF-,(CFCF-,CFCFCF-,CFCFCFCF-,(CFCFCF-,CFCF(CF)CF-及び(CFC-が挙げられる。b個のRfは,相互に独立であり,従って,互いに同一でも異なっていてもよい。 Rf represents an alkyl group (preferably an alkyl group having 1 to 8 carbon atoms) in which 80 mol% or more of hydrogen atoms are substituted with fluorine atoms. Examples of the alkyl group to be converted into Rf by fluorine substitution include linear alkyl groups (such as methyl, ethyl, propyl, butyl, pentyl and octyl), branched chain alkyl groups (such as isopropyl, isobutyl, sec-butyl and tert-butyl) and And cycloalkyl groups (cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, etc.) and the like. The ratio of hydrogen atoms of these alkyl groups substituted by fluorine atoms in Rf is preferably 80 mol% or more, more preferably 90%, based on the number of moles of hydrogen atoms that the original alkyl group had. % Or more, particularly preferably 100%. When the substitution ratio by fluorine atoms is within these preferable ranges, the photosensitivity of the sulfonium salt is further improved. Particularly preferable Rf is CF 3- , CF 3 CF 2- , (CF 3 ) 2 CF-, CF 3 CF 2 CF 2- , CF 3 CF 2 CF 2 CF 2- , (CF 3 ) 2 CFCF 2-. , CF 3 CF 2 (CF 3 ) CF— and (CF 3 ) 3 C—. The b Rf's are independent of each other, and therefore may be the same as or different from each other.
 Pは,リン原子,Fは,フッ素原子を表す。 P represents a phosphorus atom, and F represents a fluorine atom.
 R10は,水素原子の一部が少なくとも1個の元素又は電子求引基で置換されたフェニル基を表す。そのような1個の元素の例としては,ハロゲン原子が含まれ,フッ素原子,塩素原子及び臭素原子等が挙げられる。電子求引基としては,トリフルオロメチル基,ニトロ基及びシアノ基等が挙げられる。これらのうち,1個の水素原子がフッ素原子又はトリフルオロメチル基で置換されたフェニル基が好ましい。c個のR10は相互に独立であり,従って,互いに同一でも異なっていてもよい。 R 10 represents a phenyl group in which a part of hydrogen atoms is substituted with at least one element or electron withdrawing group. Examples of such one element include a halogen atom, and include a fluorine atom, a chlorine atom and a bromine atom. Examples of the electron withdrawing group include a trifluoromethyl group, a nitro group, and a cyano group. Of these, a phenyl group in which one hydrogen atom is substituted with a fluorine atom or a trifluoromethyl group is preferable. c number of R 10 is independently from each other, therefore, it may be the same or different from each other.
 Bは,ホウ素原子,Gaは,ガリウム原子を表す。 B represents a boron atom, and Ga represents a gallium atom.
 R11は,炭素数1~20のアルキル基,炭素数1~20のパーフルオロアルキル基又は炭素数6~20のアリール基を表し,アルキル基及びパーフルオロアルキル基は直鎖,分枝鎖状又は環状のいずれでもよく,アリール基は無置換であっても,置換基を有していてもよい。 R 11 represents an alkyl group having 1 to 20 carbon atoms, a perfluoroalkyl group having 1 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms. The alkyl group and the perfluoroalkyl group are linear or branched. Alternatively, the aryl group may be unsubstituted or may have a substituent.
 Sはイオウ原子,Oは酸素原子,Cは炭素原子,Nは窒素原子を表す。
 aは4~6の整数を表す。
 bは,1~5の整数が好ましく,さらに好ましくは2~4,特に好ましくは2又は3である。
 cは,1~4の整数が好ましく,さらに好ましくは4である。
S represents a sulfur atom, O represents an oxygen atom, C represents a carbon atom, and N represents a nitrogen atom.
a represents an integer of 4 to 6.
b is preferably an integer of 1 to 5, more preferably 2 to 4, and particularly preferably 2 or 3.
c is preferably an integer of 1 to 4, more preferably 4.
 MY で示されるアニオンとしては,SbF ,PF 又はBF 等が挙げられる。 Examples of the anion represented by, SbF 6 - - MY a, PF 6 - or BF 4 -, and the like.
(Rf)PF6-b で示されるアニオンとしては,(CFCFPF ,(CFCFPF ,((CFCF)PF ,((CFCF)PF ,(CFCFCFPF ,(CFCFCFPF ,((CFCFCFPF ,((CFCFCFPF ,(CFCFCFCFPF 又は(CFCFCFCFPF 等が挙げられる。これらのうち,(CFCFPF ,(CFCFCFPF ,((CFCF)PF ,((CFCF)PF ,((CFCFCFPF 又は((CFCFCFPF が好ましい。 Examples of the anion represented by (Rf) b PF 6-b include (CF 3 CF 2 ) 2 PF 4 , (CF 3 CF 2 ) 3 PF 3 , ((CF 3 ) 2 CF) 2 PF 4 , ((CF 3 ) 2 CF) 3 PF 3 , (CF 3 CF 2 CF 2 ) 2 PF 4 , (CF 3 CF 2 CF 2 ) 3 PF 3 , ((CF 3 ) 2 CFCF 2 ) 2 PF 4 , ((CF 3 ) 2 CFCF 2 ) 3 PF 3 , (CF 3 CF 2 CF 2 CF 2 ) 2 PF 4 or (CF 3 CF 2 CF 2 CF 2 ) 3 PF 3 It is done. Of these, (CF 3 CF 2 ) 3 PF 3 , (CF 3 CF 2 CF 2 ) 3 PF 3 , ((CF 3 ) 2 CF) 3 PF 3 , ((CF 3 ) 2 CF) 2 PF 4 , ((CF 3 ) 2 CFCF 2 ) 3 PF 3 or ((CF 3 ) 2 CFCF 2 ) 2 PF 4 is preferred.
 R10 BY4-c で示されるアニオンとしては,(C,((CF,(CF,(CBF ,CBF 又は(C等が挙げられる。これらのうち,(C又は((CFが好ましい。 Examples of the anion represented by R 10 c BY 4-c include (C 6 F 5 ) 4 B , ((CF 3 ) 2 C 6 H 3 ) 4 B , (CF 3 C 6 H 4 ) 4 B -, (C 6 F 5) 2 BF 2 -, C 6 F 5 BF 3 - or (C 6 H 3 F 2) 4 B - , and the like. Of these, (C 6 F 5 ) 4 B or ((CF 3 ) 2 C 6 H 3 ) 4 B is preferred.
 R10 GaY4-c で示されるアニオンとしては,(CGa,((CFGa,(CFGa,(CGaF ,CGaF 又は(CGa等が挙げられる。これらのうち,(CGa又は((CFGaが好ましい。 Examples of the anion represented by R 10 c GaY 4-c include (C 6 F 5 ) 4 Ga , ((CF 3 ) 2 C 6 H 3 ) 4 Ga , (CF 3 C 6 H 4 ) 4 Ga -, (C 6 F 5) 2 GaF 2 -, C 6 F 5 GaF 3 - or (C 6 H 3 F 2) 4 Ga - , and the like. Of these, (C 6 F 5 ) 4 Ga - or ((CF 3 ) 2 C 6 H 3 ) 4 Ga - is preferred.
 R11SO で示されるアニオンとしては,トリフルオロメタンスルホン酸アニオン,ペンタフルオロエタンスルホン酸アニオン,ヘプタフルオロプロパンスルホン酸アニオン,ノナフルオロブタンスルホン酸アニオン,ペンタフルオロフェニルスルホン酸アニオン,p-トルエンスルホン酸アニオン,ベンゼンスルホン酸アニオン,ナフタレンスルホン酸アニオン,アントラセンスルホン酸アニオン,カンファースルホン酸アニオン,メタンスルホン酸アニオン,エタンスルホン酸アニオン,プロパンスルホン酸アニオン及びブタンスルホン酸アニオン等が挙げられる。これらのうち,トリフルオロメタンスルホン酸アニオン,ノナフルオロブタンスルホン酸アニオン,ベンゼンスルホン酸アニオン又はp-トルエンスルホン酸アニオンが好ましい。 Examples of the anion represented by R 11 SO 3 include trifluoromethanesulfonate anion, pentafluoroethanesulfonate anion, heptafluoropropanesulfonate anion, nonafluorobutanesulfonate anion, pentafluorophenylsulfonate anion, p-toluenesulfone. Examples include an acid anion, benzene sulfonate anion, naphthalene sulfonate anion, anthracene sulfonate anion, camphor sulfonate anion, methane sulfonate anion, ethane sulfonate anion, propane sulfonate anion and butane sulfonate anion. Of these, trifluoromethanesulfonate anion, nonafluorobutanesulfonate anion, benzenesulfonate anion or p-toluenesulfonate anion is preferred.
 (R11SOで示されるアニオンとしては,(CFSO,(CSO,(CSO又は(CSO等が挙げられる。 Examples of the anion represented by (R 11 SO 2 ) 3 C include (CF 3 SO 2 ) 3 C , (C 2 F 5 SO 2 ) 3 C , (C 3 F 7 SO 2 ) 3 C or (C 4 F 9 SO 2 ) 3 C — and the like.
 (R11SOで示されるアニオンとしては,(CFSO,(CSO,(CSO又は(CSO等が挙げられる。 Examples of the anion represented by (R 11 SO 2 ) 2 N include (CF 3 SO 2 ) 2 N , (C 2 F 5 SO 2 ) 2 N , (C 3 F 7 SO 2 ) 2 N or (C 4 F 9 SO 2 ) 2 N — and the like.
 一価の多原子アニオンとしては,MY ,(Rf)PF6-b ,R10 BY4-c ,R10 GaY4-c ,R11SO ,(R11SO又は(R11SOで示されるアニオン以外に,過ハロゲン酸イオン(ClO ,BrO 等),ハロゲン化スルホン酸イオン(FSO ,ClSO 等),硫酸イオン(CHSO ,CFSO ,HSO 等),炭酸イオン(HCO ,CHCO 等),アルミン酸イオン(AlCl ,AlF 等),ヘキサフルオロビスマス酸イオン(BiF ),カルボン酸イオン(CHCOO,CFCOO,CCOO,CHCOO,CCOO,CFCOO等),アリールホウ酸イオン(B(C ,CHCHCHCHB(C 等),チオシアン酸イオン(SCN)及び硝酸イオン(NO )等が使用できる。 The monovalent polyatomic anions include MY a , (Rf) b PF 6-b , R 10 c BY 4-c , R 10 c GaY 4-c , R 11 SO 3 , (R 11 In addition to the anion represented by SO 2 ) 3 C or (R 11 SO 2 ) 2 N , perhalogenate ions (ClO 4 , BrO 4 etc.), halogenated sulfonate ions (FSO 3 , ClSO 3) - etc.), sulfate ion (CH 3 SO 4 -, CF 3 SO 4 -, HSO 4 - , etc.), carbonate ions (HCO 3 -, CH 3 CO 3 - , etc.), aluminate ions (AlCl 4 -, AlF 4 - etc.), hexafluoro bismuthate ions (BiF 6 -), carboxylate ion (CH 3 COO -, CF 3 COO -, C 6 H 5 COO -, CH 3 C 6 H 4 COO -, C 6 F 5 COO , CF 3 C 6 H 4 COO − and the like), aryl borate ions (B (C 6 H 5 ) 4 , CH 3 CH 2 CH 2 CH 2 B (C 6 H 5 ) 3 − and the like), Thiocyanate ions (SCN ), nitrate ions (NO 3 ) and the like can be used.
 これらのアニオンXのうち,カチオン重合性能の点で,MY ,(Rf)PF6-b ,R10 BY4-c ,R10 GaY4-c ,R11SO ,(R11SO又は(R11SOで示されるアニオンが好ましく,MY ,(Rf)PF6-b ,R10 BY4-c ,R10 GaY4-c 又は(R11SOがさらに好ましく,SbF ,PF ,(CFCFPF ,(C,((CF,(CGa,((CFGa又は(CFSOが特に好ましい。 Among these anions X, MY a , (Rf) b PF 6-b , R 10 c BY 4-c , R 10 c GaY 4-c , R 11 SO 3 are included in terms of cationic polymerization performance. -, (R 11 SO 2) 3 C - or (R 11 SO 2) 2 N - anion is preferably represented by, MY a -, (Rf) b PF 6-b -, R 10 c bY 4-c - , R 10 c GaY 4-c - or (R 11 SO 2) 3 C - more preferably, SbF 6 -, PF 6 - , (CF 3 CF 2) 3 PF 3 -, (C 6 F 5) 4 B -, ((CF 3) 2 C 6 H 3) 4 B -, (C 6 F 5) 4 Ga -, ((CF 3) 2 C 6 H 3) 4 Ga - or (CF 3 SO 2) 3 C - is particularly preferred.
 該光酸発生剤に含まれる式(1)で示されるスルホニウム塩と式(2)で示されるスルホニウム塩の合計量(100モル%)のうち,式(1)のスルホニウム塩の割合は,少なくとも50モル%とするのが好ましく,少なくとも70モル%とするのがより好ましく,少なくとも80モル%とするのが更に好ましい。式(1)のスルホニウム塩の比率が50モル%を下回るとスルホニウム塩の熱安定性が低くなり,カチオン重合性化合物との配合物としたときの貯蔵安定性が悪くなるためである。なお,式(2)のスルホニウム塩は光硬化性能を高める働きをするが,その配合割合に特に明確な下限はなく,0.5モル%以上,1モル%以上,5モル%以上等としてよい。従って,例えば,両者の合計量のうち,式(1)で示されるスルホニウム塩を50~99.5モル%,50~99モル%,50~95モル%等とすることができる。 Of the total amount (100 mol%) of the sulfonium salt represented by formula (1) and the sulfonium salt represented by formula (2) contained in the photoacid generator, the proportion of the sulfonium salt represented by formula (1) is at least It is preferably 50 mol%, more preferably at least 70 mol%, and even more preferably at least 80 mol%. This is because if the ratio of the sulfonium salt of the formula (1) is less than 50 mol%, the thermal stability of the sulfonium salt is lowered, and the storage stability when blended with a cationic polymerizable compound is deteriorated. The sulfonium salt of formula (2) works to enhance the photocuring performance, but there is no particular lower limit to the blending ratio, and it may be 0.5 mol% or more, 1 mol% or more, 5 mol% or more, etc. . Therefore, for example, of the total amount of both, the sulfonium salt represented by the formula (1) can be 50 to 99.5 mol%, 50 to 99 mol%, 50 to 95 mol%, and the like.
 本発明のスルホニウム塩混合物は,例えば,以下に述べる製造方法(1)で製造できる。 The sulfonium salt mixture of the present invention can be produced, for example, by the production method (1) described below.
<製造方法(1)>
 次反応式で示される方法(たとえば,第4版実験化学講座24巻,1992年,丸善株式会社発行,376頁,特開平7-329399号公報,特開平8-165290号公報,特開平10-212286号公報又は特開平10-7680号公報等に記載されている方法)。
<Manufacturing method (1)>
The method represented by the following reaction formula (for example, 4th edition, Experimental Chemistry Course Vol. 24, 1992, published by Maruzen Co., Ltd., page 376, JP-A-7-329399, JP-A-8-165290, JP-A-10- No. 212286 or JP-A-10-7680).
Figure JPOXMLDOC01-appb-C000012
 
Figure JPOXMLDOC01-appb-C000012
 
 上記の反応式中,R~R,S,O,A,X,m~mは,式(1)及び(2)における定義に同じである。Hは水素原子を表す。
  HX’は,一価の多原子アニオンの共役酸を表す。HX’としては,入手しやすさ,酸の安定性及び反応収率の観点から,メタンスルホン酸,パーフルオロメタンスルホン酸及び硫酸が好ましい。
 脱水剤は,たとえば,無水リン酸及び無水酢酸等を表す。
 一価の多原子アニオン(X’)は,たとえば,上記のように副分解反応により,本発明の他のアニオン(X)に交換することができる。
 DXは,アルカリ金属(リチウム,ナトリウム及びカリウム等)カチオンと本発明の他のアニオン(例えば,MY ,(Rf)PF6-b ,R10 BY4-c ,R10 GaY4-c ,R11SO ,(R11SO,R11SO等で示されるアニオン)との塩を表す。
 DX’は,アルカリ金属(リチウム,ナトリウム及びカリウム等)カチオンと一価の多原子アニオン(メタンスルホン酸アニオン,パーフルオロメタンスルホン酸アニオン及び硫酸水素アニオンが好ましい。)との塩を表す。
In the above reaction formulas, R 1 to R 9 , S, O, A 1 , X , m 1 to m 9 are the same as defined in the formulas (1) and (2). H represents a hydrogen atom.
HX ′ represents a conjugate acid of a monovalent polyatomic anion. HX ′ is preferably methanesulfonic acid, perfluoromethanesulfonic acid and sulfuric acid from the viewpoints of availability, acid stability and reaction yield.
The dehydrating agent represents, for example, phosphoric anhydride and acetic anhydride.
The monovalent polyatomic anion (X ′ ) can be exchanged for another anion (X ) of the present invention by, for example, a side decomposition reaction as described above.
DX represents an alkali metal (lithium, sodium, potassium, etc.) cation and another anion of the present invention (eg, MY a , (Rf) b PF 6-b , R 10 c BY 4-c , R 10 c An anion represented by GaY 4-c , R 11 SO 3 , (R 11 SO 2 ) 3 C , R 11 SO 2 ) 2 N − and the like.
DX ′ represents a salt of an alkali metal (such as lithium, sodium and potassium) cation and a monovalent polyatomic anion (preferably a methanesulfonate anion, a perfluoromethanesulfonate anion and a hydrogen sulfate anion).
 本発明のスルホニウム塩である<G5(G3)>及び<G6(G4)>の比率は,原料となるスルフィド<G1>とスルホキシド<G2>の比率により調整可能で,スルフィドに対するスルホキシドのモル比を過剰にすると,<G6(G4)>の生成比率が高くなり,スルフィドに対するスルホキシドのモル比を少なくすると<G5(G3)>の生成比率が高くなる。 The ratio of <G5 (G3)> and <G6 (G4)>, which are the sulfonium salts of the present invention, can be adjusted by the ratio of sulfide <G1> and sulfoxide <G2> as raw materials, and the molar ratio of sulfoxide to sulfide can be adjusted. When it is excessive, the production ratio of <G6 (G4)> increases, and when the molar ratio of sulfoxide to sulfide is decreased, the production ratio of <G5 (G3)> increases.
 上記反応式中,第1段目の反応は,無溶剤下で行ってもよいし,必要により有機溶媒(アセトニトリル,テトラヒドロフラン,ジオキサン,エタノール,アセトン等)中で行ってもよい。反応温度は,20~105℃程度である。反応時間は,1~数十時間程度である。 In the above reaction formula, the first-stage reaction may be carried out in the absence of a solvent or, if necessary, in an organic solvent (acetonitrile, tetrahydrofuran, dioxane, ethanol, acetone, etc.). The reaction temperature is about 20 to 105 ° C. The reaction time is about 1 to several tens of hours.
 第2段目の反応は,第1段目の反応に引き続いて行ってもよいし,反応中間体(G3)及び(G4)を単離(必要に応じて精製)してから行ってもよい。反応中間体(G3)及び(G4)と,アルカリ金属カチオンと本発明のアニオンとの塩(MX)の水溶液とを混合・撹拌して,複分解反応を行い,析出する固体をろ別するか,または分離した油状物を有機溶媒で抽出して有機溶媒を除去することにより,本発明のスルホニウム塩が固体あるいは粘調な液体として得られる。得られる固体又は粘稠液体は必要に応じて適当な有機溶媒で洗浄するか,再結晶法もしくはカラムクロマトグラフィー法により精製することができる(以下,同様である。)。 The reaction in the second stage may be performed subsequent to the reaction in the first stage, or may be performed after the reaction intermediates (G3) and (G4) are isolated (purified as necessary). . The reaction intermediates (G3) and (G4) and an aqueous solution of the salt (MX) of an alkali metal cation and an anion of the present invention are mixed and stirred to perform a metathesis reaction, and the precipitated solid is filtered off, Alternatively, by extracting the separated oily substance with an organic solvent and removing the organic solvent, the sulfonium salt of the present invention is obtained as a solid or viscous liquid. The obtained solid or viscous liquid can be washed with an appropriate organic solvent, if necessary, or purified by recrystallization or column chromatography (the same applies hereinafter).
 <製造方法(2)>
上記<G2>は下記反応式のように,第4版実験化学講座23巻(1991年,丸善),276~277頁等に記載されている酸化反応によって合成できる。
<Manufacturing method (2)>
<G2> can be synthesized by the oxidation reaction described in the 4th edition, Experimental Chemistry Course Vol. 23 (1991, Maruzen), pages 276 to 277, etc. as shown in the following reaction formula.
Figure JPOXMLDOC01-appb-C000013
 
Figure JPOXMLDOC01-appb-C000013
 
 反応式中,R~R,S,O,A,m~mは,式(1)及び(2)における定義に同じである。
 酸化剤は,酸化剤(過酸化水素等)を表す。
In the reaction formula, R 4 to R 6 , S, O, A 1 , and m 4 to m 6 are the same as defined in the formulas (1) and (2).
The oxidizing agent represents an oxidizing agent (hydrogen peroxide or the like).
 本発明のスルホニウム塩の化学構造は,一般的な分析手法(たとえば,H-,11B-,13C-,19F-,31P-核磁気共鳴スペクトル,赤外吸収スペクトル及び/又は元素分析等)によって同定することができる。 The chemical structure of the sulfonium salt of the present invention can be determined by a general analytical method (for example, 1 H-, 11 B-, 13 C-, 19 F-, 31 P-nuclear magnetic resonance spectrum, infrared absorption spectrum and / or element). Analysis).
 本発明のスルホニウム塩の混合物は,光酸発生剤として好適である。
 光酸発生剤とは,光照射によりその化学構造が分解し,酸を発生するものをいう。発生した酸は,エポキシドの硬化反応等の触媒として適用できる。
 本発明の光酸発生剤は,本発明の混合物をそのまま使用してもよいし,これに他の光酸発生剤を含有させて使用してもよい。
The sulfonium salt mixture of the present invention is suitable as a photoacid generator.
A photoacid generator is an acid generator that decomposes its chemical structure when irradiated with light. The generated acid can be applied as a catalyst for the curing reaction of epoxides.
As the photoacid generator of the present invention, the mixture of the present invention may be used as it is, or another photoacid generator may be contained in this mixture.
 他の光酸発生剤を含有する場合,他の光酸発生剤の含有量(モル%)は,混合物のスルホニウム塩の総モル数に基づいて,1~100が好ましく,さらに好ましくは5~50である。 When other photoacid generator is contained, the content (mol%) of the other photoacid generator is preferably 1 to 100, more preferably 5 to 50, based on the total number of moles of the sulfonium salt in the mixture. It is.
 他の光酸発生剤としては,オニウムイオン(スルホニウム,ヨードニウム,セレニウム,アンモニウム及びホスホニウム等)又は遷移金属錯体イオンと,アニオンとの塩等の従来公知のものが含まれる。 Other photoacid generators include conventionally known ones such as salts of onium ions (sulfonium, iodonium, selenium, ammonium, phosphonium, etc.) or transition metal complex ions with anions.
 アニオンとしては,MY ,(Rf)PF6-b ,R10 BY4-c ,R10 GaY4-c ,R11SO ,(R11SO又は(R11SOで示されるアニオン以外に,過ハロゲン酸イオン(ClO ,BrO 等),ハロゲン化スルホン酸イオン(FSO ,ClSO 等),硫酸イオン(CHSO ,CFSO ,HSO 等),炭酸イオン(HCO ,CHCO 等),アルミン酸イオン(AlCl ,AlF 等),ヘキサフルオロビスマス酸イオン(BiF ),カルボン酸イオン(CHCOO,CFCOO,CCOO,CHCOO,CCOO,CFCOO等),アリールホウ酸イオン(B(C ,CHCHCHCHB(C 等),チオシアン酸イオン(SCN)及び硝酸イオン(NO )等が使用できる。
 ここで,Mは,リン原子,ホウ素原子又はアンチモン原子を表す。
As anions, MY a , (Rf) b PF 6-b , R 10 c BY 4−c , R 10 c GaY 4-c , R 11 SO 3 , (R 11 SO 2 ) 3 C In addition to the anion represented by or (R 11 SO 2 ) 2 N , perhalogenate ions (ClO 4 , BrO 4 etc.), halogenated sulfonate ions (FSO 3 , ClSO 3 etc.), sulfuric acid Ion (CH 3 SO 4 , CF 3 SO 4 , HSO 4 etc.), carbonate ion (HCO 3 , CH 3 CO 3 etc.), aluminate ion (AlCl 4 , AlF 4 etc.), hexa Fluorobismate ion (BiF 6 ), carboxylate ion (CH 3 COO , CF 3 COO , C 6 H 5 COO , CH 3 C 6 H 4 COO , C 6 F 5 COO -, CF 3 C 6 H 4 COO - , etc.), an aryl boronic acid ions (B (C 6 H 5) 4 -, CH 3 CH 2 CH 2 CH 2 B (C 6 H 5) 3 - , etc.), thiocyanate ion (SCN ), nitrate ions (NO 3 ) and the like can be used.
Here, M represents a phosphorus atom, a boron atom, or an antimony atom.
 スルホニウムイオンとしては,トリアリールスルホニウム,ジアリールスルホニウム,モノアリールスルホニウム及びトリアルキルスルホニウムが含まれる。 Examples of sulfonium ions include triarylsulfonium, diarylsulfonium, monoarylsulfonium, and trialkylsulfonium.
 トリアリールスルホニウムとしては,トリフェニルスルホニウム,トリ-p-トリルスルホニウム,トリ-o-トリルスルホニウム,トリス(4-メトキシフェニル)スルホニウム,1-ナフチルジフェニルスルホニウム,2-ナフチルジフェニルスルホニウム,トリス(4-フルオロフェニル)スルホニウム,トリ-1-ナフチルスルホニウム,トリ-2-ナフチルスルホニウム,トリス(4-ヒドロキシフェニル)スルホニウム,4-(フェニルチオ)フェニルジフェニルスルホニウム,4-(p-トリルチオ)フェニルジ-p-トリルスルホニウム,4-(4-メトキシフェニルチオ)フェニルビス(4-メトキシフェニル)スルホニウム,4-(フェニルチオ)フェニルビス(4-フルオロフェニル)スルホニウム,4-(フェニルチオ)フェニルビス(4-メトキシフェニル)スルホニウム,4-(フェニルチオ)フェニルジ-p-トリルスルホニウム,ビス[4-(ジフェニルスルホニオ)フェニル]スルフィド,ビス〔4-{ビス[4-(2-ヒドロキシエトキシ)フェニル]スルホニオ}フェニル〕スルフィド,ビス{4-[ビス(4-フルオロフェニル)スルホニオ]フェニル}スルフィド,ビス{4-[ビス(4-メチルフェニル)スルホニオ]フェニル}スルフィド,ビス{4-[ビス(4-メトキシフェニル)スルホニオ]フェニル}スルフィド,4-(4-ベンゾイル-2-クロロフェニルチオ)フェニルビス(4-フルオロフェニル)スルホニウム,4-(4-ベンゾイル-2-クロロフェニルチオ)フェニルジフェニルスルホニウム,4-(4-ベンゾイルフェニルチオ)フェニルビス(4-フルオロフェニル)スルホニウム,4-(4-ベンゾイルフェニルチオ)フェニルジフェニルスルホニウム,7-イソプロピル-9-オキソ-10-チア-9,10-ジヒドロアントラセン-2-イルジ-p-トリルスルホニウム,7-イソプロピル-9-オキソ-10-チア-9,10-ジヒドロアントラセン-2-イルジフェニルスルホニウム,2-[(ジ-p-トリル)スルホニオ]チオキサントン,2-[(ジフェニル)スルホニオ]チオキサントン,2-{[4-(フェニルチオ)フェニル]フェニルスルホニオ}チオキサントン,4-[4-(4-tert-ブチルベンゾイル)フェニルチオ]フェニルジ-p-トリルスルホニウム,4-[4-(4-tert-ブチルベンゾイル)フェニルチオ]フェニルジフェニルスルホニウム,4-[4-(ベンゾイルフェニルチオ)]フェニルジ-p-トリルスルホニウム,4-[4-(ベンゾイルフェニルチオ)]フェニルジフェニルスルホニウム,5-(4-メトキシフェニル)チアアンスレニウム,5-フェニルチアアンスレニウム,5-トリルチアアンスレニウム,5-(4-エトキシフェニル)チアアンスレニウム及び5-(2,4,6-トリメチルフェニル)チアアンスレニウム等が挙げられる(米国特許第4231951号,米国特許第4256828号,特開昭61-100557号,特開平7-61964号,特開平7-10914号,特開平7-25922号,特開平8-27208号,特開平8-27209号,特開平8-165290号,特開平8-301991号,特開平9-143212号,特開平9-278813号,特開平10-7680号,特開平10-212286号,特開平10-287643号,特開平10-245378号,特開平8-157510号,特開平10-204083号,特開平8-245566号,特開平8-157451号,特開平7-324069号,特開平9-268205号,特開平9-278935号,特開2001-288205号,特開平11-80118号,特開平10-182825号,特開平10-330353,特開平10-152495,特開平5-239213号,特開平7-333834号,特開平9-12537号,特開平8-325259号,特開平8-160606号,特開2000-186071号(米国特許第6368769号),特表2005-501040号,特開2005-530698号,特開2006-104185号,特表2006-518332号及び特開2007-254454号等)。 Examples of triarylsulfonium include triphenylsulfonium, tri-p-tolylsulfonium, tri-o-tolylsulfonium, tris (4-methoxyphenyl) sulfonium, 1-naphthyldiphenylsulfonium, 2-naphthyldiphenylsulfonium, tris (4-fluoro Phenyl) sulfonium, tri-1-naphthylsulfonium, tri-2-naphthylsulfonium, tris (4-hydroxyphenyl) sulfonium, 4- (phenylthio) phenyldiphenylsulfonium, 4- (p-tolylthio) phenyldi-p-tolylsulfonium, 4- (4-methoxyphenylthio) phenylbis (4-methoxyphenyl) sulfonium, 4- (phenylthio) phenylbis (4-fluorophenyl) sulfonium, 4- (phenyl) Thio) phenylbis (4-methoxyphenyl) sulfonium, 4- (phenylthio) phenyldi-p-tolylsulfonium, bis [4- (diphenylsulfonio) phenyl] sulfide, bis [4- {bis [4- (2-hydroxy Ethoxy) phenyl] sulfonio} phenyl] sulfide, bis {4- [bis (4-fluorophenyl) sulfonio] phenyl} sulfide, bis {4- [bis (4-methylphenyl) sulfonio] phenyl} sulfide, bis {4- [Bis (4-methoxyphenyl) sulfonio] phenyl} sulfide, 4- (4-benzoyl-2-chlorophenylthio) phenylbis (4-fluorophenyl) sulfonium, 4- (4-benzoyl-2-chlorophenylthio) phenyldiphenyl Sulfonium, 4- (4- Nzoylphenylthio) phenylbis (4-fluorophenyl) sulfonium, 4- (4-benzoylphenylthio) phenyldiphenylsulfonium, 7-isopropyl-9-oxo-10-thia-9,10-dihydroanthracen-2-yldi -P-tolylsulfonium, 7-isopropyl-9-oxo-10-thia-9,10-dihydroanthracen-2-yldiphenylsulfonium, 2-[(di-p-tolyl) sulfonio] thioxanthone, 2-[(diphenyl) ) Sulfonio] thioxanthone, 2-{[4- (phenylthio) phenyl] phenylsulfonio} thioxanthone, 4- [4- (4-tert-butylbenzoyl) phenylthio] phenyldi-p-tolylsulfonium, 4- [4- ( 4-tert-butylbenzoyl) Phenylthio] phenyldiphenylsulfonium, 4- [4- (benzoylphenylthio)] phenyldi-p-tolylsulfonium, 4- [4- (benzoylphenylthio)] phenyldiphenylsulfonium, 5- (4-methoxyphenyl) thiaanthrhenium , 5-phenylthiaanthrhenium, 5-tolylthiaanthrhenium, 5- (4-ethoxyphenyl) thiaanthrhenium, 5- (2,4,6-trimethylphenyl) thiaanthrhenium, etc. No. 4,231,951, U.S. Pat. No. 4,256,828, JP-A-61-100557, JP-A-7-61964, JP-A-7-10914, JP-A-7-25922, JP-A-8-27208, JP-A-8-27209. No. 1, JP-A-8-165290, JP-A-8-30 No. 991, JP-A-9-143212, JP-A-9-278813, JP-A-10-7680, JP-A-10-212286, JP-A-10-287463, JP-A-10-245378, JP-A-8-157510 JP-A-10-204083, JP-A-8-245556, JP-A-8-157451, JP-A-7-324069, JP-A-9-268205, JP-A-9-278935, JP-A-2001-288205. JP-A-11-80118, JP-A-10-182825, JP-A-10-330353, JP-A-10-152495, JP-A-5-239213, JP-A-7-333834, JP-A-9-12537, JP-A-9-12537. No. 8-325259, JP-A-8-160606, JP-A-2000-186071 (US Pat. No. 636) 769 No.), JP-T-2005-501040, JP 2005-530698, JP 2006-104185, JP-T-2006-518332 and JP 2007-254454 No., etc.).
 ジアリールスルホニウムとしては,ジフェニルフェナシルスルホニウム,ジフェニル4-ニトロフェナシルスルホニウム,ジフェニルベンジルスルホニウム及びジフェニルメチルスルホニウム等が挙げられる(特開平7-300504号,特開昭64-45357号及び特開昭64-29419号等)。 Examples of the diarylsulfonium include diphenylphenacylsulfonium, diphenyl4-nitrophenacylsulfonium, diphenylbenzylsulfonium and diphenylmethylsulfonium (Japanese Patent Laid-Open Nos. 7-300504, 64-45357 and 64-64). 29419 etc.).
 モノアリールスルホニウムとしては,フェニルメチルベンジルスルホニウム,4-ヒドロキシフェニルメチルベンジルスルホニウム,4-メトキシフェニルメチルベンジルスルホニウム,4-アセトカルボニルオキシフェニルメチルベンジルスルホニウム,2-ナフチルメチルベンジルスルホニウム,2-ナフチルメチル(1-エトキシカルボニル)エチルスルホニウム,フェニルメチルフェナシルスルホニウム,4-ヒドロキシフェニルメチルフェナシルスルホニウム,4-メトキシフェニルメチルフェナシルスルホニウム,4-アセトカルボニルオキシフェニルメチルフェナシルスルホニウム,2-ナフチルメチルフェナシルスルホニウム,2-ナフチルオクタデシルフェナシルスルホニウム及び9-アントラセニルメチルフェナシルスルホニウム等が挙げられる(特開平6-345726号,特開平8-325225号,特開平9-118663号(米国特許第6093753号),特開平2-196812号,特開平2-1470号,特開平2-196812号,特開平3-237107号,特開平3-17101号,特開平6-228086号,特開平10-152469号,特開平7-300505号,特開2000-39706号,特開2003-277353及び特開2003-277352等)。 Examples of monoarylsulfonium include phenylmethylbenzylsulfonium, 4-hydroxyphenylmethylbenzylsulfonium, 4-methoxyphenylmethylbenzylsulfonium, 4-acetocarbonyloxyphenylmethylbenzylsulfonium, 2-naphthylmethylbenzylsulfonium, 2-naphthylmethyl (1 -Ethoxycarbonyl) ethylsulfonium, phenylmethylphenacylsulfonium, 4-hydroxyphenylmethylphenacylsulfonium, 4-methoxyphenylmethylphenacylsulfonium, 4-acetocarbonyloxyphenylmethylphenacylsulfonium, 2-naphthylmethylphenacylsulfonium, 2-naphthyloctadecylphenacylsulfonium and 9-anthracenylmethylphenacyl Examples include ruthenium (Japanese Patent Laid-Open No. 6-345726, Japanese Patent Laid-Open No. 8-325225, Japanese Patent Laid-Open No. 9-118663 (US Pat. No. 6,097,753), Japanese Patent Laid-Open No. 2-196812, Japanese Patent Laid-Open No. 2-1470, Japanese Patent Laid-Open No. 2-196812, JP-A-3-237107, JP-A-3-17101, JP-A-6-228086, JP-A-10-152469, JP-A-7-300505, JP-A-2000-39706, JP-A-2003. -277353 and JP-A-2003-277352).
 トリアルキルスルホニウムとしては,ジメチルフェナシルスルホニウム,フェナシルテトラヒドロチオフェニウム,ジメチルベンジルスルホニウム,ベンジルテトラヒドロチオフェニウム及びオクタデシルメチルフェナシルスルホニウム等が挙げられる(特開平4-308563号,特開平5-140210号,特開平5-140209号,特開平5-230189号,特開平6-271532号,特開昭58-37003号,特開平2-178303号,特開平10-338688号,特開平9-328506号,特開平11-228534号,特開平8-27102号,特開平7-333834号,特開平5-222167号,特開平11-21307号,特開平11-35613号及び米国特許第6031014号等)。 Examples of the trialkylsulfonium include dimethylphenacylsulfonium, phenacyltetrahydrothiophenium, dimethylbenzylsulfonium, benzyltetrahydrothiophenium, and octadecylmethylphenacylsulfonium (Japanese Patent Laid-Open Nos. 4-308563 and 5-140210). JP, 5-140209, JP 5-230189, JP 6-271532, JP 58-37003, JP 2-178303, JP 10-338688, JP 9-328506. No. 11, JP-A-11-228534, JP-A-8-27102, JP-A-7-333834, JP-A-5-222167, JP-A-11-21307, JP-A-11-35613, US Pat. No. 6,031,014, etc. ).
 ヨードニウムイオンとしては,ジフェニルヨードニウム,ジ-p-トリルヨードニウム,ビス(4-ドデシルフェニル)ヨードニウム,ビス(4-メトキシフェニル)ヨードニウム,(4-オクチルオキシフェニル)フェニルヨードニウム,ビス(4-デシルオキシフェニル)ヨードニウム,4-(2-ヒドロキシテトラデシルオキシ)フェニルフェニルヨードニウム,4-イソプロピルフェニル(p-トリル)ヨードニウム,イソブチルフェニル(p-トリル)ヨードニウム等が挙げられる(Macromolecules,10,1307(1977),特開平6-184170号,米国特許第4256828号,米国特許第4351708号,特開昭56-135519号,特開昭58-38350号,特開平10-195117号,特開2001-139539号,特開2000-510516号及び特開2000-119306号等)。 Examples of the iodonium ion include diphenyliodonium, di-p-tolyliodonium, bis (4-dodecylphenyl) iodonium, bis (4-methoxyphenyl) iodonium, (4-octyloxyphenyl) phenyliodonium, bis (4-decyloxyphenyl) ) Iodonium, 4- (2-hydroxytetradecyloxy) phenylphenyliodonium, 4-isopropylphenyl (p-tolyl) iodonium, isobutylphenyl (p-tolyl) iodonium, etc. (Macromolecules, 10, 1307 (1977), JP-A-6-184170, US Pat. No. 4,256,828, US Pat. No. 4,351,708, JP-A-56-135519, JP-A-58-38350, JP-A-10-195117 JP 2001-139539, JP 2000-510516 and JP 2000-119306 No., etc.).
 セレニウムイオンとしては,トリアリールセレニウム(トリフェニルセレニウム,トリ-p-トリルセレニウム,トリ-o-トリルセレニウム,トリス(4-メトキシフェニル)セレニウム,1-ナフチルジフェニルセレニウム,トリス(4-フルオロフェニル)セレニウム,トリ-1-ナフチルセレニウム,トリ-2-ナフチルセレニウム,トリス(4-ヒドロキシフェニル)セレニウム,4-(フェニルチオ)フェニルジフェニルセレニウム及び4-(p-トリルチオ)フェニルジ-p-トリルセレニウム等),ジアリールセレニウム(ジフェニルフェナシルセレニウム,ジフェニルベンジルセレニウム及びジフェニルメチルセレニウム等),モノアリールセレニウム(フェニルメチルベンジルセレニウム,4-ヒドロキシフェニルメチルベンジルセレニウム,フェニルメチルフェナシルセレニウム,4-ヒドロキシフェニルメチルフェナシルセレニウム及び4-メトキシフェニルメチルフェナシルセレニウム等)及びトリアルキルセレニウム(ジメチルフェナシルセレニウム,フェナシルテトラヒドロセレノフェニウム,ジメチルベンジルセレニウム,ベンジルテトラヒドロセレノフェニウム及びオクタデシルメチルフェナシルセレニウム等)等が挙げられる(特開昭50-151997号,特開昭50-151976号,特開昭53-22597号等)。 Selenium ions include triaryl selenium (triphenyl selenium, tri-p-tolyl selenium, tri-o-tolyl selenium, tris (4-methoxyphenyl) selenium, 1-naphthyldiphenyl selenium, tris (4-fluorophenyl) selenium , Tri-1-naphthyl selenium, tri-2-naphthyl selenium, tris (4-hydroxyphenyl) selenium, 4- (phenylthio) phenyldiphenyl selenium and 4- (p-tolylthio) phenyldi-p-tolyl selenium), diaryl Selenium (diphenylphenacyl selenium, diphenyl benzyl selenium, diphenylmethyl selenium, etc.), monoaryl selenium (phenylmethyl benzyl selenium, 4-hydroxyphenyl methanium) Rubenzyl selenium, phenylmethylphenacyl selenium, 4-hydroxyphenylmethyl phenacyl selenium, 4-methoxyphenylmethyl phenacyl selenium, etc.) and trialkyl selenium (dimethyl phenacyl selenium, phenacyl tetrahydroselenophenium, dimethyl benzyl selenium, Benzyltetrahydroselenophenium, octadecylmethylphenacyl selenium, etc.) (Japanese Patent Laid-Open Nos. 50-151997, 50-151976, 53-22597, etc.).
 アンモニウムイオンとしては,テトラアルキルアンモニウム(テトラメチルアンモニウム,エチルトリメチルアンモニウム,ジエチルジメチルアンモニウム,トリエチルメチルアンモニウム,テトラエチルアンモニウム,トリメチル-n-プロピルアンモニウム,トリメチルイソプロピルアンモニウム,トリメチル-n-ブチルアンモニウム,トリメチルイソブチルアンモニウム,トリメチル-t-ブチルアンモニウム,トリメチル-n-ヘキシルアンモニウム,ジメチルジ-n-プロピルアンモニウム,ジメチルジイソプロピルアンモニウム,ジメチル-n-プロピルイソプロピルアンモニウム,メチルトリ-n-プロピルアンモニウム及びメチルトリイソプロピルアンモニウム等),ピロリジニウム(N,N-ジメチルピロリジニウム,N-エチル-N-メチルピロリジニウム及びN,N-ジエチルピロリジニウム等),イミダゾリニウム(N,N′-ジメチルイミダゾリニウム,N,N′-ジエチルイミダゾリニウム,N-エチル-N′-メチルイミダゾリニウム,1,2,3-トリメチルイミダゾリニウム,1,3,4-トリメチルイミダゾリニウム,1,3-ジエチル-2-メチルイミダゾリニウム,1,3-ジエチル-4-メチルイミダゾリニウム及び1,2,3,4-テトラメチルイミダゾリニウム等),テトラヒドロピリミジニウム(N,N′-ジメチルテトラヒドロピリミジニウム,N,N′-ジエチルテトラヒドロピリミジニウム,N-エチル-N′-メチルテトラヒドロピリミジニウム及び1,2,3-トリメチルテトラヒドロピリミジニウム等),モルホリニウム(N,N′-ジメチルモルホリニウム,N-エチル-N-メチルモルホリニウム及びN,N-ジエチルモルホリニウム等),ピペリジニウム(N,N-ジメチルピペリジニウム,N-エチル-N′-メチルピペリジニウム及びN,N′-ジエチルピペリジニウム等),ピリジニウム(N-メチルピリジニウム,N-エチルピリジニウム,N-n-プロピルピリジニウム,N-イソプロピルピリジニウム,N-n-ブチルピリジニウム,N-ベンジルピリジニウム及びN-フェナシルピリジウム等),イミダゾリウム(N,N′-ジメチルイミダゾリウム,N-エチル-N-メチルイミダゾリウム,N,N′-ジエチルイミダゾリウム,1,2-ジエチル-3-メチルイミダゾリウム,1,3-ジエチル-2-メチルイミダゾリウム及び1-メチル-3-n-プロピル-2,4-ジメチルイミダゾリウム等),キノリウム(N-メチルキノリウム,N-エチルキノリウム,N-n-プロピルキノリウム,N-イソプロピルキノリウム,N-n-ブチルキノリウム,N-ベンジルキノリウム及びN-フェナシルキノリウム等),イソキノリウム(N-メチルイソキノリウム,N-エチルイソキノリウム,N-n-プロピルイソキノリウム,N-イソプロピルイソキノリウム,N-n-ブチルイソキノリウム,N-ベンジルイソキノリウム及びN-フェナシルイソキノリウム等),チアゾニウム(ベンジルベンゾチアゾニウム及びフェナシルベンゾチアゾニウム等),及びアルリジニウム(ベンジルアクリジウム及びフェナシルアクリジウム等)等が挙げられる(米国特許第4069055号,特許公報第2519480号,特開平5-222112号,特開平5-222111号,特開平5-262813号,特開平5-255256号,特開平7-109303号,特開平10-101718号,特開平2-268173号,特開平9-328507号,特開平5-132461号,特開平9-221652号,特開平7-43854号,特開平7-43901号,特開平5-262813号,特開平4-327574,特開平2-43202号,特開昭60-203628号,特開昭57-209931号及び特開平9-221652号等)。 Examples of ammonium ions include tetraalkylammonium (tetramethylammonium, ethyltrimethylammonium, diethyldimethylammonium, triethylmethylammonium, tetraethylammonium, trimethyl-n-propylammonium, trimethylisopropylammonium, trimethyl-n-butylammonium, trimethylisobutylammonium, Trimethyl-t-butylammonium, trimethyl-n-hexylammonium, dimethyldi-n-propylammonium, dimethyldiisopropylammonium, dimethyl-n-propylisopropylammonium, methyltri-n-propylammonium and methyltriisopropylammonium), pyrrolidinium (N , N-Dimethylpyrrolidinium N-ethyl-N-methylpyrrolidinium and N, N-diethylpyrrolidinium, etc.), imidazolinium (N, N'-dimethylimidazolinium, N, N'-diethylimidazolinium, N-ethyl- N'-methylimidazolinium, 1,2,3-trimethylimidazolinium, 1,3,4-trimethylimidazolinium, 1,3-diethyl-2-methylimidazolinium, 1,3-diethyl-4 -Methylimidazolinium and 1,2,3,4-tetramethylimidazolinium, etc.), tetrahydropyrimidinium (N, N'-dimethyltetrahydropyrimidinium, N, N'-diethyltetrahydropyrimidinium, N -Ethyl-N'-methyltetrahydropyrimidinium and 1,2,3-trimethyltetrahydropyrimidinium, etc.), mol Linium (N, N'-dimethylmorpholinium, N-ethyl-N-methylmorpholinium, N, N-diethylmorpholinium, etc.), piperidinium (N, N-dimethylpiperidinium, N-ethyl-N) '-Methylpiperidinium and N, N'-diethylpiperidinium, etc.), pyridinium (N-methylpyridinium, N-ethylpyridinium, Nn-propylpyridinium, N-isopropylpyridinium, Nn-butylpyridinium, N-benzylpyridinium and N-phenacylpyridinium), imidazolium (N, N'-dimethylimidazolium, N-ethyl-N-methylimidazolium, N, N'-diethylimidazolium, 1,2-diethyl) -3-Methylimidazolium, 1,3-diethyl-2-methylimidazolium and 1-methyl-3-n-propyl-2,4-dimethylimidazolium, etc.), quinolium (N-methylquinolium, N-ethylquinolium, Nn-propylquinolium, N-isopropylquinolium, N -N-butyl quinolium, N-benzyl quinolium, N-phenacyl quinolium, etc.), isoquinolium (N-methylisoquinolium, N-ethylisoquinolium, Nn-propylisoquinolium, N-isopropyl Isoquinolium, Nn-butylisoquinolium, N-benzylisoquinolium, N-phenacylisoquinolium, etc.), thiazonium (benzylbenzothiazonium, phenacylbenzothiazonium, etc.), and alridinium ( And the like (US Pat. No. 406). No. 055, Japanese Patent Publication No. 2519480, Japanese Patent Application Laid-Open No. 5-222112, Japanese Patent Application Laid-Open No. 5-222111, Japanese Patent Application Laid-Open No. 5-262613, Japanese Patent Application Laid-Open No. 5-255256, Japanese Patent Application Laid-Open No. 7-109303, Japanese Patent Application Laid-Open No. JP-A-2-268173, JP-A-9-328507, JP-A-5-132461, JP-A-9-221652, JP-A-7-43854, JP-A-7-43901, JP-A-5-262813, JP-A-4-327574, JP-A-2-43202, JP-A-60-203628, JP-A-57-209931, JP-A-9-221652, etc.).
 ホスホニウムイオンとしては,テトラアリールホスホニウム(テトラフェニルホスホニウム,テトラ-p-トリルホスホニウム,テトラキス(2-メトキシフェニル)ホスホニウム,テトラキス(3-メトキシフェニル)ホスホニウム及びテトラキス(4-メトキシフェニル)ホスホニウム等),トリアリールホスホニウム(トリフェニルベンジルホスホニウム,トリフェニルフェナシルホスホニウム,トリフェニルメチルホスホニウム及びトリフェニルブチルホスホニウム等,及びテトラアルキルホスホニウム(トリエチルベンジルホスホニウム,トリブチルベンジルホスホニウム,テトラエチルホスホニウム,テトラブチルホスホニウム,テトラヘキシルホスホニウム,トリエチルフェナシルホスホニウム及びトリブチルフェナシルホスホニウム等)等が挙げられる(特開平6-157624号,特開平5-105692号,特開平7-82283号及び特開平9-202873号等)。 Examples of phosphonium ions include tetraarylphosphonium (tetraphenylphosphonium, tetra-p-tolylphosphonium, tetrakis (2-methoxyphenyl) phosphonium, tetrakis (3-methoxyphenyl) phosphonium, tetrakis (4-methoxyphenyl) phosphonium, etc.), tria Reel phosphonium (triphenylbenzylphosphonium, triphenylphenacylphosphonium, triphenylmethylphosphonium, triphenylbutylphosphonium, etc.) and tetraalkylphosphonium (triethylbenzylphosphonium, tributylbenzylphosphonium, tetraethylphosphonium, tetrabutylphosphonium, tetrahexylphosphonium, triethyl Phenacylphosphonium and tributylphenacylphos Honiumu etc.) and the like (JP-A-6-157624, JP-A-5-105692, JP-A-7-82283 and JP-A 9-202873 Patent etc.).
 遷移金属錯体イオンとしては,クロム錯体カチオン{(η5-シクロペンタジエニル)(η6-トルエン)Cr,(η5-シクロペンタジエニル)(η6-キシレン)Cr,(η5-シクロペンタジエニル)(η6-1-メチルナフタレン)Cr,(η5-シクロペンタジエニル)(η6-クメン)Cr,(η5-シクロペンタジエニル)(η6-メシチレン)Cr,(η5-シクロペンタジエニル)(η6-ピレン)Cr,(η5-フルオレニル)(η6-クメン)Cr,(η5-インデニル)(η6-クメン)Cr,ビス(η6-メシチレン)Cr2+,ビス(η6-キシレン)Cr2+,ビス(η6-クメン)Cr2+,ビス(η6-トルエン)Cr2+,(η6-トルエン)(η6-キシレン)Cr2+,(η6-クメン)(η6-ナフタレン)Cr2+,ビス(η5-シクロペンタジエニル)Cr,ビス(η5-インデニル)Cr,(η5-シクロペンタジエニル)(η5-フルオレニル)Cr及び(η5-シクロペンタジエニル)(η5-インデニル)Cr等},及び鉄錯体カチオン{(η5-シクロペンタジエニル)(η6-トルエン)Fe,(η5-シクロペンタジエニル)(η6-キシレン)Fe,(η5-シクロペンタジエニル)(η6-1-メチルナフタレン)Fe,(η5-シクロペンタジエニル)(η6-クメン)Fe,(η5-シクロペンタジエニル)(η6-メシチレン)Fe,(η5-シクロペンタジエニル)(η6-ピレン)Fe,(η5-フルオレニル)(η6-クメン)Fe,(η5-インデニル)(η6-クメン)Fe,ビス(η6-メシチレン)Fe2+,ビス(η6-キシレン)Fe2+,ビス(η6-クメン)Fe2+,ビス(η6-トルエン)Fe2+,(η6-トルエン)(η6-キシレン)Fe2+,(η6-クメン)(η6-ナフタレン)Fe2+,ビス(η5-シクロペンタジエニル)Fe,ビス(η5-インデニル)Fe,(η5-シクロペンタジエニル)(η5-フルオレニル)Fe及び(η5-シクロペンタジエニル)(η5-インデニル)Fe等}等が挙げられる(ただし,Crはクロム原子,Feは鉄原子を表す。)(Macromol. Chem.,81,86(1965),Angew. Makromol.
Chem., 50, 9 (1976),Macromol. Chem., 153, 229(1972),J. Polym. Sci., Polym. Chem. Edn., 14, 1547(1976),Chem. Ztg., 108, 345(1984),J. Imaging. Sci.,
30, 174(1986),J. Photochem. Photobiol. A:Chem., 77(1994),J. Rad. Curing., 26(1986),Adv. Polym. Sci., 78,
61(1986),米国特許第4973722号,同第4992572号,同第3895954号,ヨーロッパ特許公開公報第203829号,同第354181号,同第94914号,同第109851号,同第94915号,特開平58-210904号(米国特許第4868288号),特開昭59-108003号,特開2000-226396号及び特開平2-284903号等)。
Transition metal complex ions include chromium complex cations {(η5-cyclopentadienyl) (η6-toluene) Cr + , (η5-cyclopentadienyl) (η6-xylene) Cr + , (η5-cyclopentadienyl) ) (Η6-1-methylnaphthalene) Cr + , (η5-cyclopentadienyl) (η6-cumene) Cr + , (η5-cyclopentadienyl) (η6-mesitylene) Cr + , (η5-cyclopentadiene) Enyl) (η6-pyrene) Cr + , (η5-fluorenyl) (η6-cumene) Cr + , (η5-indenyl) (η6-cumene) Cr + , bis (η6-mesitylene) Cr 2+ , bis (η6-xylene) ) Cr 2+, bis (Ita6- cumene) Cr 2+, bis (Ita6- toluene) Cr 2+, (η6- toluene) (η6- xylene) Cr 2+, (η6 Cumene) (η6- naphthalene) Cr 2+, bis (eta. @ 5-cyclopentadienyl) Cr +, bis (eta. @ 5-indenyl) Cr +, (η5- cyclopentadienyl) (eta. @ 5 fluorenyl) Cr + and (eta. @ 5 Cyclopentadienyl) (η5-indenyl) Cr + etc}, and iron complex cation {(η5-cyclopentadienyl) (η6-toluene) Fe + , (η5-cyclopentadienyl) (η6-xylene) Fe + , (Η5-cyclopentadienyl) (η6-1-methylnaphthalene) Fe + , (η5-cyclopentadienyl) (η6-cumene) Fe + , (η5-cyclopentadienyl) (η6-mesitylene) Fe +, (η5- cyclopentadienyl) (η6- pyrene) Fe +, (η5- fluorenyl) (η6- cumene) Fe +, (η5- Indeni ) (Ita6- cumene) Fe +, bis (Ita6- mesitylene) Fe 2+, bis (Ita6- xylene) Fe 2+, bis (Ita6- cumene) Fe 2+, bis (Ita6- toluene) Fe 2+, (η6- toluene) (Η6-xylene) Fe 2+ , (η6-cumene) (η6-naphthalene) Fe 2+ , bis (η5-cyclopentadienyl) Fe + , bis (η5-indenyl) Fe + , (η5-cyclopentadienyl) (Η5-fluorenyl) Fe + and (η5-cyclopentadienyl) (η5-indenyl) Fe + etc.} (wherein Cr represents a chromium atom and Fe represents an iron atom) (Macromol. Chem. 81,86 (1965), Angew. Makromol.
Chem., 50, 9 (1976), Macromol. Chem., 153, 229 (1972), J. Polym. Sci., Polym. Chem. Edn., 14, 1547 (1976), Chem. Ztg., 108, 345 (1984), J. Imaging. Sci.,
30, 174 (1986), J. Photochem. Photobiol. A: Chem., 77 (1994), J. Rad. Curing., 26 (1986), Adv. Polym. Sci., 78,
61 (1986), U.S. Pat. Nos. 4,973,722, 4,992,572, 3,895,954, European Patent Publication Nos. 203829, 354181, 94914, 109851, 94949 Kaihei 58-210904 (US Pat. No. 4,868,288), JP-A-59-108003, JP-A-2000-226396, JP-A-2-284903, and the like.
 本発明の光酸発生剤は,カチオン重合性化合物への溶解を容易にするため,あらかじめカチオン重合を阻害しない溶剤に溶かしておいてもよい。 The photoacid generator of the present invention may be dissolved in advance in a solvent that does not inhibit cationic polymerization in order to facilitate dissolution in a cationically polymerizable compound.
 溶剤としては,カーボネート(プロピレンカーボネート,エチレンカーボネート,1,2-ブチレンカーボネート,ジメチルカーボネート及びジエチルカーボネート等);エステル(酢酸エチル,乳酸エチル,β-プロピオラクトン,β―ブチロラクトン,γ-ブチロラクトン,δ-バレロラクトン及びε-カプロラクトン等);エーテル(エチレングリコールモノメチルエーテル,プロピレングリコールモノエチルエーテル,ジエチレングリコールモノブチルエーテル,ジプロピレングリコールジメチルエーテル,トリエチレングリコールジエチルエーテル,トリプロピレングリコールジブチルエーテル等);及びエーテルエステル(エチレングリコールモノメチルエーテル酢酸エステル,プロピレングリコールモノエチルエーテル酢酸エステル及びジエチレングリコールモノブチルエーテル酢酸エステル等)等が挙げられる。 Solvents include carbonates (propylene carbonate, ethylene carbonate, 1,2-butylene carbonate, dimethyl carbonate and diethyl carbonate); esters (ethyl acetate, ethyl lactate, β-propiolactone, β-butyrolactone, γ-butyrolactone, δ -Valerolactone and ε-caprolactone, etc.); ethers (ethylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol dimethyl ether, triethylene glycol diethyl ether, tripropylene glycol dibutyl ether, etc.); and ether esters ( Ethylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate And diethylene glycol monobutyl ether acetate, etc.) and the like.
 溶剤を使用する場合,溶剤の使用割合は,本発明の光酸発生剤100重量部に対して,15~1000重量部が好ましく,さらに好ましくは30~500重量部である。使用する溶媒は,単独で使用してもよく,または2種以上を併用してもよい。 When a solvent is used, the proportion of the solvent used is preferably 15 to 1000 parts by weight, more preferably 30 to 500 parts by weight with respect to 100 parts by weight of the photoacid generator of the present invention. The solvent to be used may be used independently or may use 2 or more types together.
 本発明のエネルギー線硬化性組成物は,上記の光酸発生剤とカチオン重合性化合物とから構成される。 The energy beam curable composition of the present invention is composed of the above-mentioned photoacid generator and a cationically polymerizable compound.
 カチオン重合性化合物としては,環状エーテル(エポキシド及びオキセタン等),エチレン性不飽和化合物(ビニルエーテル及びスチレン等),ビシクロオルトエステル,スピロオルトカーボネート及びスピロオルトエステル等が挙げられる(特開平11-060996号,特開平09-302269号,特開2003-026993号,特開2002-206017号,特開平11-349895号,特開平10-212343号,特開2000-119306号,特開平10-67812号,特開2000-186071号,特開平08-85775号,特開平08-134405号,特開2008-20838,特開2008-20839,特開2008-20841,特開2008-26660,特開2008-26644,特開2007-277327,フォトポリマー懇話会編「フォトポリマーハンドブック」(1989年,工業調査会),総合技術センター編「UV・EB硬化技術」(1982年,総合技術センター),ラドテック研究会編「UV・EB硬化材料」(1992年,シーエムシー),技術情報協会編「UV硬化における硬化不良・阻害原因とその対策」(2003年,技術情報協会),色材,68,(5),286-293(1995),ファインケミカル,29,(19),5-14(2000)等)。 Examples of cationically polymerizable compounds include cyclic ethers (epoxides and oxetanes), ethylenically unsaturated compounds (vinyl ether and styrene, etc.), bicycloorthoesters, spiroorthocarbonates and spiroorthoesters (Japanese Patent Laid-Open No. 11-060996). JP-A 09-302269, JP-A 2003-026993, JP-A 2002-206017, JP-A 11-349895, JP-A 10-212343, JP-A 2000-119306, JP-A 10-67812, JP 2000-186071, JP 08-85775, JP 08-134405, JP 2008-20838, JP 2008-20839, JP 2008-20841, JP 2008-26660, JP 2008-26644. , JP 007-277327, photopolymer social gathering “Photopolymer Handbook” (1989, Industrial Research Committee), General Technology Center “UV / EB Curing Technology” (1982, General Technology Center), Radtech Study Group “UV. "EB Curing Material" (1992, CMC), Technical Information Association, "Hardening Failure / Inhibition Causes in UV Curing and Countermeasures" (2003, Technical Information Association), Coloring Materials, 68, (5), 286-293 (1995), fine chemicals, 29, (19), 5-14 (2000), etc.).
 エポキシドとしては,公知のもの等が使用でき,芳香族エポキシド,脂環式エポキシド及び脂肪族エポキシドが含まれる。 As the epoxide, known ones can be used, and aromatic epoxides, alicyclic epoxides and aliphatic epoxides are included.
 芳香族エポキシドとしては,少なくとも1個の芳香環を有する1価又は多価のフェノール(フェノール,ビフェノール,ビスフェノールA,ビスフェノールF,フェノールノボラック,クレゾールノボラック及びこれらの臭素化物又はこれらのアルキレンオキシド付加体した化合物)のグリシジルエーテル,及び少なくとも1個の芳香環を有する1価又は多価のカルボン酸(フタル酸及び3-メチルフタル酸等)のグリシジルエステル(ジグリシジルフタレート及びジグリシジル-3-メチルフタレート等)が挙げられる。 Aromatic epoxides include monovalent or polyvalent phenols having at least one aromatic ring (phenol, biphenol, bisphenol A, bisphenol F, phenol novolac, cresol novolac and brominated products thereof or alkylene oxide adducts thereof. A glycidyl ether of a compound) and a glycidyl ester (such as diglycidyl phthalate and diglycidyl-3-methyl phthalate) of a monovalent or polyvalent carboxylic acid (such as phthalic acid and 3-methylphthalic acid) having at least one aromatic ring Can be mentioned.
 脂環式エポキシドとしては,少なくとも1個のシクロヘキセンやシクロペンテン環を有する化合物を酸化剤でエポキシ化することによって得られる化合物(3,4-エポキシシクロヘキシルメチル-3,4-エポキシシクロヘキサンカルボキシレート,3,4-エポキシ-1-メチルシクロヘキシル-3,4-エポキシ-1-メチルヘキサンカルボキシレート,6-メチル-3,4-エポキシシクロヘキシルメチル-6-メチル-3,4-エポキシシクロヘキサンカルボキシレート,3,4-エポキシ-3-メチルシクロヘキシルメチル-3,4-エポキシ-3-メチルシクロヘキサンカルボキシレート,3,4-エポキシ-5-メチルシクロヘキシルメチル-3,4-エポキシ-5-メチルシクロヘキサンカルボキシレート,2-(3,4-エポキシシクロヘキシル-5,5-スピロ-3,4-エポキシ)シクロヘキサンメタジオキサン,ビス(3,4-エポキシシクロヘキシルメチル)アジペート,3,4-エポキシ-6-メチルシクロヘキシルカルボキシレート,メチレンビス(3,4-エポキシシクロヘキサン),ジシクロペンタジエンジエポキシド及びエチレンビス(3,4-エポキシシクロヘキサンカルボキシレート)等)が挙げられる。 As the alicyclic epoxide, a compound obtained by epoxidizing a compound having at least one cyclohexene or cyclopentene ring with an oxidizing agent (3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, 3, 4-epoxy-1-methylcyclohexyl-3,4-epoxy-1-methylhexanecarboxylate, 6-methyl-3,4-epoxycyclohexylmethyl-6-methyl-3,4-epoxycyclohexanecarboxylate, 3,4 -Epoxy-3-methylcyclohexylmethyl-3,4-epoxy-3-methylcyclohexanecarboxylate, 3,4-epoxy-5-methylcyclohexylmethyl-3,4-epoxy-5-methylcyclohexanecarboxylate, 2- ( 3, -Epoxycyclohexyl-5,5-spiro-3,4-epoxy) cyclohexanemetadioxane, bis (3,4-epoxycyclohexylmethyl) adipate, 3,4-epoxy-6-methylcyclohexylcarboxylate, methylenebis (3,4 -Epoxycyclohexane), dicyclopentadiene diepoxide and ethylene bis (3,4-epoxycyclohexanecarboxylate)).
 脂肪族エポキシドとしては,脂肪族多価アルコール又はこのアルキレンオキシド付加体のポリグリシジルエーテル(1,4-ブタンジオールジグリシジルエーテル,1,6-ヘキサンジオールジグリシジルエーテル,水素添加ビスフェノールAジグリシジルエーテル,グリセリンのトリグリシジルエーテル,トリメチロールプロパンのトリグリシジルエーテル,ソルビトールのテトラグリシジルエーテル及びジペンタエリスリトールのヘキサグリシジルエーテル等),脂肪族多塩基酸のポリグリシジルエステル(ジグリシジルテトラヒドロフタレート,ジグリシジルヘキサヒドロフタレート及びジグリシジルヘキサヒドロ-3-メチルフタレート等),長鎖不飽和化合物のエポキシ化物(エポキシ化大豆油及びエポキシ化ポリブタジエン等),グリシジル基含有ポリマー(グリシジル(メタ)アクリレートのホモポリマー又はこれと他の不飽和モノマーとのコポリマー等),及びジメチルシロキサン骨格を有する多官能エポキシド(Journal of Polym. Sci., Part A, Polym. Chem., Vol. 28, 497 (1990)など) Aliphatic epoxides include aliphatic polyhydric alcohols or polyglycidyl ethers of this alkylene oxide adduct (1,4-butanediol diglycidyl ether, 1,6-hexanediol diglycidyl ether, hydrogenated bisphenol A diglycidyl ether, Triglycidyl ether of glycerin, triglycidyl ether of trimethylolpropane, tetraglycidyl ether of sorbitol and hexaglycidyl ether of dipentaerythritol), polyglycidyl ester of aliphatic polybasic acid (diglycidyl tetrahydrophthalate, diglycidyl hexahydrophthalate) And diglycidyl hexahydro-3-methylphthalate), epoxidized products of long-chain unsaturated compounds (epoxidized soybean oil, epoxidized polybutadiene, etc.) , Glycidyl group-containing polymers (such as homopolymers of glycidyl (meth) acrylate or copolymers thereof with other unsaturated monomers), and polyfunctional epoxides having a dimethylsiloxane skeleton (Journal of Polym. Sci., Part A, Polym. Chem., Vol. 28, 497 (1990))
 オキセタンとしては,公知のもの等が使用でき,3-エチル-3-ヒドロキシメチルオキセタン,(3-エチル-3-オキセタニルメトキシ)メチルベンゼン,[1-(3-エチル-3-オキセタニルメトキシ)エチル]フェニルエーテル,イソブトキシメチル(3-エチル-3-オキセタニルメチル)エーテル,イソボルニルオキシエチル(3-エチル-3-オキセタニルメチル)エーテル,イソボルニル(3-エチル-3-オキセタニルメチル)エーテル,2-エチルヘキシル(3-エチル-3-オキセタニルメチル)エーテル,エチルジエチレングリコール(3-エチル-3-オキセタニルメチル)エーテル,ジシクロペンテニルオキシエチル(3-エチル-3-オキセタニルメチル)エーテル,ジシクロペンテニル(3-エチル-3-オキセタニルメチル)エーテル,テトラヒドロフルフリル(3-エチル-3-オキセタニルメチル)エーテル,テトラブロモフェニル(3-エチル-3-オキセタニルメチル)エーテル,2-テトラブロモフェノキシエチル(3-エチル-3-オキセタニルメチル)エーテル,トリブロモフェニル(3-エチル-3-オキセタニルメチル)エーテル,2-トリブロモフェノキシエチル(3-エチル-3-オキセタニルメチル)エーテル,2-ヒドロキシエチル(3-エチル-3-オキセタニルメチル)エーテル,2-ヒドロキシプロピル(3-エチル-3-オキセタニルメチル)エーテル,ブトキシエチル(3-エチル-3-オキセタニルメチル)エーテル,ペンタクロロフェニル(3-エチル-3-オキセタニルメチル)エーテル,ペンタブロモフェニル(3-エチル-3-オキセタニルメチル)エーテル,ボルニル(3-エチル-3-オキセタニルメチル)エーテル,3,7-ビス(3-オキセタニル)-5-オキサ-ノナン,3,3’-(1,3-(2-メチレニル)プロパンジイルビス(オキシメチレン))ビス-(3-エチルオキセタン),1,4-ビス[(3-エチル-3-オキセタニルメトキシ)メチル]ベンゼン,1,2-ビス[(3-エチル-3-オキセタニルメトキシ)メチル]エタン,1,3-ビス[(3-エチル-3-オキセタニルメトキシ)メチル]プロパン,エチレングリコールビス(3-エチル-3-オキセタニルメチル)エーテル,ジシクロペンテニルビス(3-エチル-3-オキセタニルメチル)エーテル,トリエチレングリコールビス(3-エチル-3-オキセタニルメチル)エーテル,テトラエチレングリコールビス(3-エチル-3-オキセタニルメチル)エーテル,トリシクロデカンジイルジメチレン(3-エチル-3-オキセタニルメチル)エーテル,トリメチロールプロパントリス(3-エチル-3-オキセタニルメチル)エーテル,1,4-ビス(3-エチル-3-オキセタニルメトキシ)ブタン,1,6-ビス(3-エチル-3-オキセタニルメトキシ)ヘキサン,ペンタエリスリトールトリス(3-エチル-3-オキセタニルメチル)エーテル,ペンタエリスリトールテトラキス(3-エチル-3-オキセタニルメチル)エーテル,ポリエチレングリコールビス(3-エチル-3-オキセタニルメチル)エーテル,ジペンタエリスリトールヘキサキス(3-エチル-3-オキセタニルメチル)エーテル,ジペンタエリスリトールペンタキス(3-エチル-3-オキセタニルメチル)エーテル,ジペンタエリスリトールテトラキス(3-エチル-3-オキセタニルメチル)エーテル,3-エチル-3-フェノキシメチルオキセタン,3-エチル-3-(4-メチルフェノキシ)メチルオキセタン,3-エチル-3-(4-フルオロフェノキシ)メチルオキセタン,3-エチル-3-(1-ナフトキシ)メチルオキセタン,3-エチル-3-(2-ナフトキシ)メチルオキセタン,3-エチル-3-{[3-(エトキシシリル)プロポキシ]メチル}オキセタン,オキセタニルシルセスキオキセタン及びフェノールノボラックオキセタン等が挙げられる。 As oxetane, known ones can be used, such as 3-ethyl-3-hydroxymethyloxetane, (3-ethyl-3-oxetanylmethoxy) methylbenzene, [1- (3-ethyl-3-oxetanylmethoxy) ethyl] Phenyl ether, isobutoxymethyl (3-ethyl-3-oxetanylmethyl) ether, isobornyloxyethyl (3-ethyl-3-oxetanylmethyl) ether, isobornyl (3-ethyl-3-oxetanylmethyl) ether, 2- Ethylhexyl (3-ethyl-3-oxetanylmethyl) ether, ethyldiethylene glycol (3-ethyl-3-oxetanylmethyl) ether, dicyclopentenyloxyethyl (3-ethyl-3-oxetanylmethyl) ether, dicyclopentenyl (3- ethyl- -Oxetanylmethyl) ether, tetrahydrofurfuryl (3-ethyl-3-oxetanylmethyl) ether, tetrabromophenyl (3-ethyl-3-oxetanylmethyl) ether, 2-tetrabromophenoxyethyl (3-ethyl-3-oxetanyl) Methyl) ether, tribromophenyl (3-ethyl-3-oxetanylmethyl) ether, 2-tribromophenoxyethyl (3-ethyl-3-oxetanylmethyl) ether, 2-hydroxyethyl (3-ethyl-3-oxetanylmethyl) ) Ether, 2-hydroxypropyl (3-ethyl-3-oxetanylmethyl) ether, butoxyethyl (3-ethyl-3-oxetanylmethyl) ether, pentachlorophenyl (3-ethyl-3-oxetanylmethyl) ether, Tabromophenyl (3-ethyl-3-oxetanylmethyl) ether, bornyl (3-ethyl-3-oxetanylmethyl) ether, 3,7-bis (3-oxetanyl) -5-oxa-nonane, 3,3'- (1,3- (2-methylenyl) propanediylbis (oxymethylene)) bis- (3-ethyloxetane), 1,4-bis [(3-ethyl-3-oxetanylmethoxy) methyl] benzene, 1,2 -Bis [(3-ethyl-3-oxetanylmethoxy) methyl] ethane, 1,3-bis [(3-ethyl-3-oxetanylmethoxy) methyl] propane, ethylene glycol bis (3-ethyl-3-oxetanylmethyl) Ether, dicyclopentenyl bis (3-ethyl-3-oxetanylmethyl) ether, triethylene glycol bis (3 -Ethyl-3-oxetanylmethyl) ether, tetraethylene glycol bis (3-ethyl-3-oxetanylmethyl) ether, tricyclodecanediyldimethylene (3-ethyl-3-oxetanylmethyl) ether, trimethylolpropane tris (3 -Ethyl-3-oxetanylmethyl) ether, 1,4-bis (3-ethyl-3-oxetanylmethoxy) butane, 1,6-bis (3-ethyl-3-oxetanylmethoxy) hexane, pentaerythritol tris (3- Ethyl-3-oxetanylmethyl) ether, pentaerythritol tetrakis (3-ethyl-3-oxetanylmethyl) ether, polyethylene glycol bis (3-ethyl-3-oxetanylmethyl) ether, dipentaerythritol hexakis (3-ethyl) -3-Oxetanylmethyl) ether, dipentaerythritol pentakis (3-ethyl-3-oxetanylmethyl) ether, dipentaerythritol tetrakis (3-ethyl-3-oxetanylmethyl) ether, 3-ethyl-3-phenoxymethyloxetane , 3-ethyl-3- (4-methylphenoxy) methyloxetane, 3-ethyl-3- (4-fluorophenoxy) methyloxetane, 3-ethyl-3- (1-naphthoxy) methyloxetane, 3-ethyl-3 -(2-naphthoxy) methyloxetane, 3-ethyl-3-{[3- (ethoxysilyl) propoxy] methyl} oxetane, oxetanylsilsesquioxetane, phenol novolac oxetane and the like.
 エチレン性不飽和化合物としては,公知のカチオン重合性単量体等が使用でき,脂肪族モノビニルエーテル,芳香族モノビニルエーテル,多官能ビニルエーテル,スチレン及びカチオン重合性窒素含有モノマーが含まれる。 As the ethylenically unsaturated compound, known cationically polymerizable monomers and the like can be used, and include aliphatic monovinyl ether, aromatic monovinyl ether, polyfunctional vinyl ether, styrene, and cationically polymerizable nitrogen-containing monomers.
 脂肪族モノビニルエーテルとしては,メチルビニルエーテル,エチルビニルエーテル,ブチルビニルエーテル,イソブチルビニルエーテル,シクロヘキシルビニルエーテル,2-クロロエチルビニルエーテル,2-ヒドロキシエチルビニルエーテル,4-ヒドロキシブチルビニルエーテル,ステアリルビニルエーテル,2-アセトキシエチルビニルエーテル,ジエチレングリコールモノビニルエーテル,2-エチルヘキシルビニルエーテル,ドデシルビニルエーテル,オクタデシルビニルエーテル,アリルビニルエーテル,2-メタクリロイロオキシエチルビニルエーテル及び2-アクリロイロオキシエチルビニルエーテル等が挙げられる。 Aliphatic monovinyl ethers include methyl vinyl ether, ethyl vinyl ether, butyl vinyl ether, isobutyl vinyl ether, cyclohexyl vinyl ether, 2-chloroethyl vinyl ether, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, stearyl vinyl ether, 2-acetoxyethyl vinyl ether, diethylene glycol Examples thereof include monovinyl ether, 2-ethylhexyl vinyl ether, dodecyl vinyl ether, octadecyl vinyl ether, allyl vinyl ether, 2-methacryloyloxyethyl vinyl ether, and 2-acryloyloxyethyl vinyl ether.
 芳香族モノビニルエーテルとしては,2-フェノキシエチルビニルエーテル,フェニルビニルエーテル及びp-メトキシフェニルビニルエーテル等が挙げられる。 Examples of the aromatic monovinyl ether include 2-phenoxyethyl vinyl ether, phenyl vinyl ether and p-methoxyphenyl vinyl ether.
 多官能ビニルエーテルとしては,ブタンジオール-1,4-ジビニルエーテル,トリエチレングリコールジビニルエーテル,1,4-ベンゼンジビニルエーテル,ハイドロキノンジビニルエーテル,シクロヘキサンジメタノールジビニルエーテル(1,4-ビス[(ビニルオキシ)メチル]シクロヘキサン),ジエチレングリコールジビニルエーテル,ジプロピレングリコールジビニルエーテル及びヘキサンジオールジビニルエーテル等が挙げられる。 Polyfunctional vinyl ethers include butanediol-1,4-divinyl ether, triethylene glycol divinyl ether, 1,4-benzene divinyl ether, hydroquinone divinyl ether, cyclohexanedimethanol divinyl ether (1,4-bis [(vinyloxy) methyl Cyclohexane), diethylene glycol divinyl ether, dipropylene glycol divinyl ether, hexanediol divinyl ether, and the like.
 スチレンとしては,スチレン,α-メチルスチレン,p-メトキシスチレン及びp-tert-ブトキシスチレン等が挙げられる。 Examples of styrene include styrene, α-methylstyrene, p-methoxystyrene, and p-tert-butoxystyrene.
 カチオン重合性窒素含有モノマーとしては,N-ビニルカルバゾール及びN-ビニルピロリドン等が挙げられる。 Examples of the cationic polymerizable nitrogen-containing monomer include N-vinylcarbazole and N-vinylpyrrolidone.
 ビシクロオルトエステルとしては,1-フェニル-4-エチル-2,6,7-トリオキサビシクロ[2.2.2]オクタン及び1-エチル-4-ヒドロキシメチル-2,6,7-トリオキサビシクロ-[2.2.2]オクタン等が挙げられる。 Bicycloorthoesters include 1-phenyl-4-ethyl-2,6,7-trioxabicyclo [2.2.2] octane and 1-ethyl-4-hydroxymethyl-2,6,7-trioxabicyclo. -[2.2.2] octane and the like.
 スピロオルトカーボネートとしては,1,5,7,11-テトラオキサスピロ[5.5]ウンデカン及び3,9-ジベンジル-1,5,7,11-テトラオキサスピロ[5.5]ウンデカン等が挙げられる。 Examples of spiro orthocarbonates include 1,5,7,11-tetraoxaspiro [5.5] undecane and 3,9-dibenzyl-1,5,7,11-tetraoxaspiro [5.5] undecane. It is done.
 スピロオルトエステルとしては,1,4,6-トリオキサスピロ[4.4]ノナン,2-メチル-1,4,6-トリオキサスピロ[4.4]ノナン及び1,4,6-トリオキサスピロ[4.5]デカン等が挙げられる。 Spiro orthoesters include 1,4,6-trioxaspiro [4.4] nonane, 2-methyl-1,4,6-trioxaspiro [4.4] nonane and 1,4,6-trioxas. Examples include pyro [4.5] decane.
 これらのカチオン重合性化合物のうち,エポキシド,オキセタン及びビニルエーテルが好ましく,さらに好ましくはエポキシド及びオキセタン,特に好ましくは脂環式エポキシド及びオキセタンである。また,これらのカチオン重合性化合物は単独で使用してもよく,または2種以上を併用してもよい。 Among these cationically polymerizable compounds, epoxides, oxetanes and vinyl ethers are preferable, epoxides and oxetanes are more preferable, and alicyclic epoxides and oxetanes are particularly preferable. In addition, these cationically polymerizable compounds may be used alone or in combination of two or more.
 エネルギー線硬化性組成物中の本発明の光酸発生剤の含有量は,カチオン重合性化合物100部に対し,0.05~20重量部が好ましく,さらに好ましくは0.1~10重量部である。この範囲であると,カチオン重合性化合物の重合がさらに十分となり,硬化体の物性がさらに良好となる。なお,この含有量は,カチオン重合性化合物の性質やエネルギー線の種類と照射量,温度,硬化時間,湿度,塗膜の厚み等のさまざまな要因を考慮することによって決定され,上記範囲に限定されない。 The content of the photoacid generator of the present invention in the energy ray curable composition is preferably 0.05 to 20 parts by weight, more preferably 0.1 to 10 parts by weight with respect to 100 parts of the cationic polymerizable compound. is there. Within this range, the cationically polymerizable compound is further sufficiently polymerized, and the physical properties of the cured product are further improved. This content is determined by considering various factors such as the nature of the cationic polymerizable compound, the type and energy dose of the energy ray, temperature, curing time, humidity, and coating thickness, and is limited to the above range. Not.
 本発明のエネルギー線硬化性組成物には,必要に応じて,公知の添加剤(増感剤,顔料,充填剤,帯電防止剤,難燃剤,消泡剤,流動調整剤,光安定剤,酸化防止剤,密着性付与剤,イオン補足剤,溶剤,非反応性の樹脂及びラジカル重合性化合物等)を含有させることができる。 In the energy ray curable composition of the present invention, a known additive (sensitizer, pigment, filler, antistatic agent, flame retardant, antifoaming agent, flow control agent, light stabilizer, Antioxidants, adhesion-imparting agents, ion scavengers, solvents, non-reactive resins, radical polymerizable compounds, and the like).
 本発明のエネルギー線硬化性組成物には,基本的に増感剤の必要がないが,硬化性を補完するものとして,必要により,増感剤を含有できる。このような増感剤としては,公知(特開平11-279212号及び特開平09-183960号等)の増感剤等が使用でき,アントラセン{アントラセン,9,10-ジブトキシアントラセン,9,10-ジメトキシアントラセン,9,10-ジエトキシアントラセン,2-エチル-9,10-ジメトキシアントラセン,2-tert-ブチル-9,10-ジメトキシアントラセン,2,3-ジメチル-9,10-ジメトキシアントラセン,9-メトキシ-10-メチルアントラセン,9,10-ジエトキシアントラセン,2-エチル-9,10-ジエトキシアントラセン,2-tert-ブチル-9,10-ジエトキシアントラセン,2,3-ジメチル-9,10-ジエトキシアントラセン,9-エトキシ-10-メチルアントラセン,9,10-ジプロポキシアントラセン,9,10-ジイソプロポキシアントラセン,9,10-ジエトキシアントラセン,2-エチル-9,10-ジプロポキシアントラセン,2-tert-ブチル-9,10-ジプロポキシアントラセン,2,3-ジメチル-9,10-ジプロポキシアントラセン,9-イソプロポキシ-10-メチルアントラセン,9,10-ジベンジルオキシアントラセン,2-エチル-9,10-ジベンジルオキシアントラセン,2-tert-9,10-ジベンジルオキシアントラセン,2,3-ジメチル-9,10-ジベンジルオキシアントラセン,9-ベンジルオキシ-10-メチルアントラセン,9,10-ジ-α-メチルベンジルオキシアントラセン,2-エチル-9,10-ジ-α-メチルベンジルオキシアントラセン,2-tert-9,10-ジ-α-メチルベンジルオキシアントラセン,2,3-ジメチル-9,10-ジ-α-メチルベンジルオキシアントラセン,9-(α-メチルベンジルオキシ)-10-メチルアントラセン,9,10-ジフェニルアントラセン,9-メトキシアントラセン,9-エトキシアントラセン,9-メチルアントラセン,9-ブロモアントラセン,9-メチルチオアントラセン及び9-エチルチオアントラセン等};ピレン;1,2-ベンズアントラセン;ペリレン;テトラセン;コロネン;チオキサントン{チオキサントン,2-メチルチオキサントン,2-エチルチオキサントン,2-クロロチオキサントン,2-イソプロピルチオキサントン及び2,4-ジエチルチオキサントン等};フェノチアジン;キサントン;ナフタレン{1-ナフトール,2-ナフトール,1-メトキシナフタレン,2-メトキシナフタレン,1,4-ジヒドロキシナフタレン,1,5-ジヒドロキシナフタレン,1,6-ジヒドロキシナフタレン,2,7-ジヒドロキシナフタレン,2,7-ジメトキシナフタレン,1,1′-チオビス(2-ナフトール),1,1′-ビ-(2-ナフトール)及び4-メトキシ-1-ナフトール等};ケトン{ジメトキシアセトフェノン,ジエトキシアセトフェノン,2-ヒドロキシ-2-メチル-1-フェニルプロパン-1-オン,4’-イソプロピル-2-ヒドロキシ-2-メチルプロピオフェノン,2-ヒドロキシメチル-2-メチルプロピオフェノン,2,2-ジメトキシ-1,2-ジフェニルエタン-1-オン,p-ジメチルアミノアセトフェノン,p-tert-ブチルジクロロアセトフェノン,p-tert-ブチルトリクロロアセトフェノン,p-アジドベンザルアセトフェノン,1-ヒドロキシシクロヘキシルフェニルケトン,ベンゾイン,ベンゾインメチルエーテル,ベンゾインエチルエーテル,ベンゾインイソプロピルエーテル,ベンゾイン-n-ブチルエーテル,ベンゾインイソブチルエーテル,1-[4-(2-ヒドロキシエトキシ)フェニル]-2-ヒドロキシ-2-メチル-1-プロパン-1-オン,ベンゾフェノン,o-ベンゾイル安息香酸メチル,ミヒラーケトン,4,4’-ビスジエチルアミノベンゾフェノン,4,4’-ジクロロベンゾフェノン及び4-ベンゾイル-4’-メチルジフェニルスルフィド等};カルバゾール{N-フェニルカルバゾール,N-エチルカルバゾール,ポリ-N-ビニルカルバゾール及びN-グリシジルカルバゾール等};クリセン{1,4-ジメトキシクリセン,1,4-ジエトキシクリセン,1,4-ジプロポキシクリセン,1,4-ジベンジルオキシクリセン及び1,4-ジ-α-メチルベンジルオキシクリセン等};フェナントレン{9-ヒドロキシフェナントレン,9-メトキシフェナントレン,9-エトキシフェナントレン,9-ベンジルオキシフェナントレン,9,10-ジメトキシフェナントレン,9,10-ジエトキシフェナントレン,9,10-ジプロポキシフェナントレン,9,10-ジベンジルオキシフェナントレン,9,10-ジ-α-メチルベンジルオキシフェナントレン,9-ヒドロキシ-10-メトキシフェナントレン及び9-ヒドロキシ-10-エトキシフェナントレン等}等が挙げられる。 The energy beam curable composition of the present invention basically does not require a sensitizer, but may contain a sensitizer as necessary to supplement the curability. As such a sensitizer, known sensitizers (Japanese Patent Laid-Open Nos. 11-279212 and 09-183960) can be used, and anthracene {anthracene, 9,10-dibutoxyanthracene, 9,10 -Dimethoxyanthracene, 9,10-diethoxyanthracene, 2-ethyl-9,10-dimethoxyanthracene, 2-tert-butyl-9,10-dimethoxyanthracene, 2,3-dimethyl-9,10-dimethoxyanthracene, 9 -Methoxy-10-methylanthracene, 9,10-diethoxyanthracene, 2-ethyl-9,10-diethoxyanthracene, 2-tert-butyl-9,10-diethoxyanthracene, 2,3-dimethyl-9, 10-diethoxyanthracene, 9-ethoxy-10-methylanthracene, , 10-dipropoxyanthracene, 9,10-diisopropoxyanthracene, 9,10-diethoxyanthracene, 2-ethyl-9,10-dipropoxyanthracene, 2-tert-butyl-9,10-dipropoxyanthracene, 2,3-dimethyl-9,10-dipropoxyanthracene, 9-isopropoxy-10-methylanthracene, 9,10-dibenzyloxyanthracene, 2-ethyl-9,10-dibenzyloxyanthracene, 2-tert- 9,10-dibenzyloxyanthracene, 2,3-dimethyl-9,10-dibenzyloxyanthracene, 9-benzyloxy-10-methylanthracene, 9,10-di-α-methylbenzyloxyanthracene, 2-ethyl -9,10-di-α-methylbenzyloxy Nthracene, 2-tert-9,10-di-α-methylbenzyloxyanthracene, 2,3-dimethyl-9,10-di-α-methylbenzyloxyanthracene, 9- (α-methylbenzyloxy) -10- Methyl anthracene, 9,10-diphenylanthracene, 9-methoxyanthracene, 9-ethoxyanthracene, 9-methylanthracene, 9-bromoanthracene, 9-methylthioanthracene, 9-ethylthioanthracene, etc.}; pyrene; 1,2-benz Anthracene; perylene; tetracene; coronene; thioxanthone {thioxanthone, 2-methylthioxanthone, 2-ethylthioxanthone, 2-chlorothioxanthone, 2-isopropylthioxanthone, 2,4-diethylthioxanthone, etc.}; phenothiazine Xanthone; naphthalene {1-naphthol, 2-naphthol, 1-methoxynaphthalene, 2-methoxynaphthalene, 1,4-dihydroxynaphthalene, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, 2,7-dimethoxynaphthalene, 1,1′-thiobis (2-naphthol), 1,1′-bi- (2-naphthol), 4-methoxy-1-naphthol, etc.}; ketone {dimethoxyacetophenone, diethoxyacetophenone , 2-hydroxy-2-methyl-1-phenylpropan-1-one, 4′-isopropyl-2-hydroxy-2-methylpropiophenone, 2-hydroxymethyl-2-methylpropiophenone, 2,2- Dimethoxy-1,2-diphenylethane-1-one, p-di Methylaminoacetophenone, p-tert-butyldichloroacetophenone, p-tert-butyltrichloroacetophenone, p-azidobenzalacetophenone, 1-hydroxycyclohexyl phenyl ketone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin- n-butyl ether, benzoin isobutyl ether, 1- [4- (2-hydroxyethoxy) phenyl] -2-hydroxy-2-methyl-1-propan-1-one, benzophenone, methyl o-benzoylbenzoate, Michler's ketone, 4 , 4′-bisdiethylaminobenzophenone, 4,4′-dichlorobenzophenone and 4-benzoyl-4′-methyldiphenyl sulfide, etc.]; carbazole {N Phenylcarbazole, N-ethylcarbazole, poly-N-vinylcarbazole, N-glycidylcarbazole and the like}; chrysene {1,4-dimethoxychrysene, 1,4-diethoxychrysene, 1,4-dipropoxychrysene, 1,4 -Dibenzyloxychrysene and 1,4-di-α-methylbenzyloxychrysene, etc.}; phenanthrene {9-hydroxyphenanthrene, 9-methoxyphenanthrene, 9-ethoxyphenanthrene, 9-benzyloxyphenanthrene, 9,10-dimethoxyphenanthrene , 9,10-diethoxyphenanthrene, 9,10-dipropoxyphenanthrene, 9,10-dibenzyloxyphenanthrene, 9,10-di-α-methylbenzyloxyphenanthrene, 9-hydroxy-10-methoxyphen Nantoren and 9-hydroxy-10-ethoxy phenanthrene and the like}.
 増感剤を含有する場合,増感剤の含有量は,光酸発生剤100部に対して,1~300重量部が好ましく,さらに好ましくは5~200重量部である。 When a sensitizer is contained, the content of the sensitizer is preferably 1 to 300 parts by weight, more preferably 5 to 200 parts by weight, with respect to 100 parts of the photoacid generator.
 顔料としては,公知の顔料等が使用でき,無機顔料(酸化チタン,酸化鉄及びカーボンブラック等)及び有機顔料(アゾ顔料,シアニン顔料,フタロシアニン顔料及びキナクリドン顔料等)等が挙げられる。 As the pigment, known pigments and the like can be used, and inorganic pigments (such as titanium oxide, iron oxide, and carbon black) and organic pigments (such as azo pigments, cyanine pigments, phthalocyanine pigments, and quinacridone pigments) can be used.
 顔料を含有する場合,顔料の含有量は,光酸発生剤100部に対して,0.5~400000重量部が好ましく,さらに好ましくは10~150000重量部である。 When a pigment is contained, the content of the pigment is preferably 0.5 to 400,000 parts by weight, more preferably 10 to 150,000 parts by weight with respect to 100 parts of the photoacid generator.
 充填剤としては,公知の充填剤等が使用でき,溶融シリカ,結晶シリカ,炭酸カルシウム,酸化アルミニウム,水酸化アルミニウム,酸化ジルコニウム,炭酸マグネシウム,マイカ,タルク,ケイ酸カルシウム及びケイ酸リチウムアルミニウム等が挙げられる。 Known fillers can be used as fillers, such as fused silica, crystalline silica, calcium carbonate, aluminum oxide, aluminum hydroxide, zirconium oxide, magnesium carbonate, mica, talc, calcium silicate and lithium aluminum silicate. Can be mentioned.
 充填剤を含有する場合,充填剤の含有量は,光酸発生剤100部に対して,50~600000重量部が好ましく,さらに好ましくは300~200000重量部である。 When the filler is contained, the content of the filler is preferably 50 to 600000 parts by weight, more preferably 300 to 200000 parts by weight with respect to 100 parts of the photoacid generator.
 帯電防止剤としては,公知の帯電防止剤等が使用でき,非イオン型帯電防止剤{グリセリン脂肪酸エステル,ポリオキシエチレンアルキルエーテル,ポリオキシエチレンアルキルフェニルエーテル,N,N-ビス(2-ヒドロキシエチル)アルキルアミン,ポリオキシエチレンアルキルアミン,ポリオキシエチレンアルキルアミン脂肪酸エステル及びアルキルジエタノールアミド等};アニオン型帯電防止剤{アルキルスルホン酸塩,アルキルベンゼンスルホン酸塩及びアルキルリン酸塩等};カチオン型帯電防止剤{テトラアルキルアンモニウム塩及びトリアルキルベンジルアンモニウム塩等};両性型帯電防止剤{アルキルベタイン及びアルキルイミダゾリウムベタイン等};高分子型帯電防止剤{第四級アンモオ含有スチレン-(メタ)アクリレート共重合体,第四級アンモニオ含有スチレン-アクリロニトリル-マレイミド共重合体,ポリオキシエチレングリコール,ポリエーテルエステルアミド,ポリエーテルアミドイミド,エチレンオキシド-エピクロロヒドリン共重合体及びメトキシポリオキシエチレングリコール(メタ)アクリレート共重合体等}等が挙げられる。 As the antistatic agent, known antistatic agents can be used, and nonionic antistatic agents {glycerin fatty acid ester, polyoxyethylene alkyl ether, polyoxyethylene alkyl phenyl ether, N, N-bis (2-hydroxyethyl) ) Alkylamine, polyoxyethylene alkylamine, polyoxyethylene alkylamine fatty acid ester, alkyldiethanolamide, etc.}; anionic antistatic agent {alkyl sulfonate, alkylbenzene sulfonate, alkyl phosphate, etc.}; cationic charge Inhibitor {tetraalkylammonium salt and trialkylbenzylammonium salt, etc.}; amphoteric antistatic agent {alkylbetaine and alkylimidazolium betaine etc.}; polymer antistatic agent {quaternary ammo-containing styrene- (medium ) Acrylate copolymer, quaternary ammonio-containing styrene-acrylonitrile-maleimide copolymer, polyoxyethylene glycol, polyether ester amide, polyether amide imide, ethylene oxide-epichlorohydrin copolymer and methoxy polyoxyethylene glycol (Meth) acrylate copolymer, etc.}.
 帯電防止剤を含有する場合,帯電防止剤の含有量は,光酸発生剤100部に対して,0.1~20000重量部が好ましく,さらに好ましくは0.6~5000重量部である。 When the antistatic agent is contained, the content of the antistatic agent is preferably 0.1 to 20000 parts by weight, more preferably 0.6 to 5000 parts by weight, with respect to 100 parts of the photoacid generator.
 難燃剤としては,公知の難燃剤等が使用でき,無機難燃剤{三酸化アンチモン,五酸化アンチモン,酸化錫,水酸化錫,酸化モリブデン,ホウ酸亜鉛,メタホウ酸バリウム,赤燐,水酸化アルミニウム,水酸化マグネシウム及びアルミン酸カルシウム等};臭素難燃剤{テトラブロモ無水フタル酸,ヘキサブロモベンゼン及びデカブロモビフェニルエーテル等};及びリン酸エステル難燃剤{トリス(トリブロモフェニル)ホスフェート等}等が挙げられる。 As the flame retardant, known flame retardants can be used. Inorganic flame retardant {antimony trioxide, antimony pentoxide, tin oxide, tin hydroxide, molybdenum oxide, zinc borate, barium metaborate, red phosphorus, aluminum hydroxide , Magnesium hydroxide, calcium aluminate, etc.}; bromine flame retardant {tetrabromophthalic anhydride, hexabromobenzene, decabromobiphenyl ether, etc.}; and phosphate ester flame retardant {tris (tribromophenyl) phosphate, etc.} It is done.
 難燃剤を含有する場合,難燃剤の含有量は,光酸発生剤100部に対して,0.5~40000重量部が好ましく,さらに好ましくは5~10000重量部である。 When the flame retardant is contained, the content of the flame retardant is preferably 0.5 to 40000 parts by weight, more preferably 5 to 10000 parts by weight with respect to 100 parts of the photoacid generator.
 消泡剤としては,公知の消泡剤等が使用でき,アルコール消泡剤{イソプロパノール,n-ブタノール,オクタエチルアルコール及びヘキサデシルアルコール等};金属石鹸消泡剤{ステアリン酸カルシウム及びステアリン酸アルミニウム等};リン酸エステル消泡剤{トリブチルホスフェート等};脂肪酸エステル消泡剤{グリセリンモノラウレート等};ポリエーテル消泡剤{ポリアルキレングリコール等};シリコーン消泡剤{ジメチルシリコーンオイル及びシリカ・シリコーンコンパウンド等};及び鉱物油消泡剤{シリカ粉末を分散させた鉱物油等}等が挙げられる。 As the antifoaming agent, known antifoaming agents can be used, alcohol defoaming agents {isopropanol, n-butanol, octaethyl alcohol, hexadecyl alcohol, etc.}; metal soap defoaming agents {calcium stearate, aluminum stearate, etc. }; Phosphate ester defoamers {tributyl phosphate, etc.}; Fatty acid ester defoamers {glycerin monolaurate, etc.}; Polyether defoamers {polyalkylene glycol, etc.}; Silicone defoamers {dimethylsilicone oil and silica Silicone compound and the like}; and mineral oil defoaming agent {mineral oil in which silica powder is dispersed} and the like.
 消泡剤を含有する場合,消泡剤の含有量は,光酸発生剤100部に対して,0.1~20000重量部が好ましく,さらに好ましくは0.5~5000重量部である。 When the antifoaming agent is contained, the content of the antifoaming agent is preferably 0.1 to 20000 parts by weight, more preferably 0.5 to 5000 parts by weight with respect to 100 parts of the photoacid generator.
 流動調整剤としては,公知の流動性調整剤等が使用でき,水素添加ヒマシ油,酸化ポリエチレン,有機ベントナイト,コロイド状シリカ,アマイドワックス,金属石鹸及びアクリル酸エステルポリマー等が挙げられる。 As the flow control agent, known flow control agents can be used, and examples thereof include hydrogenated castor oil, polyethylene oxide, organic bentonite, colloidal silica, amide wax, metal soap, and acrylate polymer.
 流動性調整剤を含有する場合,流動性調整剤の含有量は,光酸発生剤100部に対して,0.1~20000重量部が好ましく,さらに好ましくは0.5~5000重量部である。 When the fluidity modifier is contained, the content of the fluidity modifier is preferably 0.1 to 20000 parts by weight, more preferably 0.5 to 5000 parts by weight with respect to 100 parts of the photoacid generator. .
 光安定剤としては,公知の光安定剤等が使用でき,紫外線吸収型安定剤{ベンゾトリアゾール,ベンゾフェノン,サリチレート,シアノアクリレート及びこれらの誘導体等};ラジカル補足型安定剤{ヒンダードアミン等};及び消光型安定剤{ニッケル錯体等}等が挙げられる。 As the light stabilizer, known light stabilizers and the like can be used. Ultraviolet absorbing stabilizers {benzotriazole, benzophenone, salicylate, cyanoacrylate and derivatives thereof}; radical scavenging stabilizers {hindered amine, etc.}; and quenching And a type stabilizer {nickel complex etc.}.
 光安定剤を含有する場合,光安定剤の含有量は,光酸発生剤100部に対して,0.05~40000重量部が好ましく,さらに好ましくは0.5~10000重量部である。 When the light stabilizer is contained, the content of the light stabilizer is preferably 0.05 to 40,000 parts by weight, more preferably 0.5 to 10,000 parts by weight with respect to 100 parts of the photoacid generator.
 酸化防止剤としては,公知の酸化防止剤等が使用でき,フェノール系酸化防止剤(モノフェノール系,ビスフェノール系及び高分子フェノール系等),硫黄系酸化防止剤及びリン系酸化防止剤等が挙げられる。 As antioxidants, known antioxidants can be used, such as phenolic antioxidants (monophenolic, bisphenolic and polymeric phenolic), sulfur antioxidants and phosphorus antioxidants. It is done.
 酸化防止剤を含有する場合,酸化防止剤の含有量は,光酸発生剤100部に対して,0.1~20000重量部が好ましく,さらに好ましくは0.6~5000重量部である。 When the antioxidant is contained, the content of the antioxidant is preferably 0.1 to 20000 parts by weight, more preferably 0.6 to 5000 parts by weight with respect to 100 parts of the photoacid generator.
 密着性付与剤としては,公知の密着性付与剤等が使用でき,カップリング剤,シランカップリング剤及びチタンカップリング剤等が挙げられる。 As the adhesion-imparting agent, a known adhesion-imparting agent can be used, and examples thereof include a coupling agent, a silane coupling agent, and a titanium coupling agent.
 密着性付与剤を含有する場合,密着性付与剤の含有量は,密着性付与剤100部に対して,0.1~20000重量部が好ましく,さらに好ましくは0.6~5000重量部である。 When the adhesiveness-imparting agent is contained, the content of the adhesiveness-imparting agent is preferably 0.1 to 20000 parts by weight, more preferably 0.6 to 5000 parts by weight with respect to 100 parts of the adhesiveness-imparting agent. .
 イオン補足剤としては,公知のイオン補足剤等が使用でき,有機アルミニウム(アルコキシアルミニウム及びフェノキシアルミニウム等)等が挙げられる。 As the ion scavenger, known ion scavengers can be used, and organic aluminum (alkoxyaluminum, phenoxyaluminum, etc.) and the like can be mentioned.
 イオン補足剤を含有する場合,イオン補足剤の含有量は,光酸発生剤100部に対して,0.1~20000重量部が好ましく,さらに好ましくは0.6~5000重量部である。 In the case of containing an ion scavenger, the content of the ion scavenger is preferably 0.1 to 20000 parts by weight, more preferably 0.6 to 5000 parts by weight with respect to 100 parts of the photoacid generator.
 溶剤としては,カチオン重合性化合物の溶解やエネルギー線硬化性組成物の粘度調整のために使用できれば制限はなく,上記光酸発生剤の溶剤として使用できるもの以外に,例えば,エーテル{アニソール,ジエチルエーテル,テトラヒドロフラン,1,4-ジオキサン及びエチル-tert-ブチルエーテル等};芳香族炭化水素{トルエン,キシレン,クメン,エチルベンゼン及びメシチレン等};ケトン{アセトン,メチルエチルケトン,イソブチルケトン及びシクロヘキサノン等};アルコール{メタノール,エタノール,イソプロピルアルコール及びtert-ブタノール等};ニトリル{アセトニトリル等}等が挙げられる。 The solvent is not limited as long as it can be used for dissolving a cationically polymerizable compound or adjusting the viscosity of an energy ray-curable composition. In addition to those that can be used as a solvent for the photoacid generator, for example, ether {anisole, diethyl Ether, tetrahydrofuran, 1,4-dioxane and ethyl-tert-butyl ether, etc.}; aromatic hydrocarbon {toluene, xylene, cumene, ethylbenzene, mesitylene, etc.}; ketone {acetone, methyl ethyl ketone, isobutyl ketone, cyclohexanone, etc.}; alcohol { Methanol, ethanol, isopropyl alcohol, tert-butanol and the like}; nitrile {acetonitrile and the like} and the like.
 溶剤を含有する場合,溶剤の含有量は,光酸発生剤100部に対して,50~2000000重量部が好ましく,さらに好ましくは200~500000重量部である。 In the case of containing a solvent, the content of the solvent is preferably 50 to 2,000,000 parts by weight, more preferably 200 to 500,000 parts by weight with respect to 100 parts of the photoacid generator.
 非反応性の樹脂としては,ポリエステル,ポリ酢酸ビニル,ポリ塩化ビニル,ポリブタジエン,ポリカーボナート,ポリスチレン,ポリビニルエーテル,ポリビニルブチラール,ポリブテン,スチレンブタジエンブロックコポリマー水添物,(メタ)アクリル酸エステルの共重合体及びポリウレタン等が挙げられる。これらの樹脂の数平均分子量は,1000~500000が好ましく,さらに好ましくは5000~100000である(数平均分子量はGPC等の一般的な方法によって測定された値である。)。 Non-reactive resins include polyester, polyvinyl acetate, polyvinyl chloride, polybutadiene, polycarbonate, polystyrene, polyvinyl ether, polyvinyl butyral, polybutene, hydrogenated styrene butadiene block copolymer, and (meth) acrylic ester co-polymer. Examples include coalescence and polyurethane. The number average molecular weight of these resins is preferably 1,000 to 500,000, more preferably 5000 to 100,000 (the number average molecular weight is a value measured by a general method such as GPC).
 非反応性の樹脂を含有する場合,非反応性の樹脂の含有量は,光酸発生剤100部に対して,5~400000重量部が好ましく,さらに好ましくは50~150000重量部である。 When the non-reactive resin is contained, the content of the non-reactive resin is preferably 5 to 400000 parts by weight, more preferably 50 to 150,000 parts by weight with respect to 100 parts of the photoacid generator.
 非反応性の樹脂を含有させる場合,非反応性の樹脂をカチオン重合性化合物等と溶解しやすくするため,あらかじめ溶剤に溶かしておくことが望ましい。 When a non-reactive resin is included, it is desirable to dissolve the non-reactive resin in a solvent in advance so that the non-reactive resin can be easily dissolved with the cationic polymerizable compound.
 ラジカル重合性化合物としては,公知{フォトポリマー懇話会編「フォトポリマーハンドブック」(1989年,工業調査会),総合技術センター編「UV・EB硬化技術」(1982年,総合技術センター),ラドテック研究会編「UV・EB硬化材料」(1992年,シーエムシー),技術情報協会編「UV硬化における硬化不良・阻害原因とその対策」(2003年,技術情報協会)}のラジカル重合性化合物等が使用でき,単官能モノマー,2官能モノマー,多官能モノマー,エポキシ(メタ)アクリレート,ポリエステル(メタ)アクリレート及びウレタン(メタ)アクリレートが含まれる。 As radically polymerizable compounds, known {photopolymer social gathering edition “Photopolymer Handbook” (1989, Industrial Research Committee), General Technology Center “UV / EB Curing Technology” (1982, General Technology Center), Radtech Research The radical-polymerizable compounds in the “UV / EB Curing Materials” edition (1992, CMC) and the “Technical Information Association”, “Hardening Failure / Inhibition Causes in UV Curing and Countermeasures” (2003, Technical Information Association)} Monofunctional monomers, bifunctional monomers, polyfunctional monomers, epoxy (meth) acrylates, polyester (meth) acrylates and urethane (meth) acrylates can be used.
 単官能モノマーとしては,メチル(メタ)アクリレート,エチル(メタ)アクレート,2-エチルヘキシル(メタ)アクリレート,ラウリル(メタ)アクリレート,2-ヒドロキシエチル(メタ)アクリレート,1,6-ヘキサンジオールモノ(メタ)アクリレート,スチレン,ビニルシクロヘキセン,イソブチレン及びブタジエン等が挙げられる。 Monofunctional monomers include methyl (meth) acrylate, ethyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 1,6-hexanediol mono (meta) ) Acrylate, styrene, vinylcyclohexene, isobutylene and butadiene.
 2官能モノマーとしては,2価アルコール又はこれらのアルキレンオキシド付加体のジ(メタ)アクリレート{2価アルコール(エチレングリコール,プロピレングリコール,ビスフェノールA,ビスフェノールAの水素化物及びこれらのアルキレンオキシド付加体等)のジ(メタ)アクリレート},及びジビニルベンゼン等が挙げられる。 Bifunctional monomers include dihydric alcohols or di (meth) acrylates of these alkylene oxide adducts {dihydric alcohols (ethylene hydride, propylene glycol, bisphenol A, bisphenol A hydrides and their alkylene oxide adducts, etc.) Di (meth) acrylate} and divinylbenzene.
 多官能モノマーとしては,2官能モノマー以外のモノマーが使用でき,多価アルコール(トリメチロールプロパン,グリセリン及びペンタエリスリトール及びこのアルキレンオキシド付加体等)の(メタ)アクリレート等が挙げられる。 As the polyfunctional monomer, a monomer other than the bifunctional monomer can be used, and examples thereof include (meth) acrylates of polyhydric alcohols (trimethylolpropane, glycerin, pentaerythritol, and adducts thereof with an alkylene oxide).
 エポキシ(メタ)アクリレートとしては,エポキシド{芳香族エポキシド,脂環式エポキシド及び脂肪族エポキシド等}と,(メタ)アクリル酸とを反応させて得られるエポキシ(メタ)アクリレート等が挙げられる。 Examples of the epoxy (meth) acrylate include epoxy (meth) acrylate obtained by reacting epoxide {aromatic epoxide, alicyclic epoxide, aliphatic epoxide, etc.} with (meth) acrylic acid.
 ポリエステル(メタ)アクリレートとしては,芳香族多塩基酸(フタル酸,イソフタル酸,テレフタル酸,トリメリット酸及びピロメリット酸等)又は脂肪族多塩基酸(コハク酸,アジピン酸及びセバシン酸等)と,多価アルコール(エチレングリコール,ジエチレングリコール,ポリエチレングリコール,プロピレングリコール,ジプロピレングリコール,ポリプロピレングリコール,ネオペンチルグリコール,ポリテトラメチレングリコール,1,3-ブタンジオール,1,4-ブタンジオール,1,6-ヘキサンジオール,トリメチロールプロパン,グリセリン,ペンタエリスリトール,ビスフェノール及びこれらのアルキレンオキシド付加体等)とから得たヒドロキシ末端のポリエステルを,(メタ)アクリル酸でエステル化することにより得られるポリエステル(メタ)アクリレート等が挙げられる。 Polyester (meth) acrylates include aromatic polybasic acids (phthalic acid, isophthalic acid, terephthalic acid, trimellitic acid, pyromellitic acid, etc.) or aliphatic polybasic acids (succinic acid, adipic acid, sebacic acid, etc.) , Polyhydric alcohol (ethylene glycol, diethylene glycol, polyethylene glycol, propylene glycol, dipropylene glycol, polypropylene glycol, neopentyl glycol, polytetramethylene glycol, 1,3-butanediol, 1,4-butanediol, 1,6- Esterification of a hydroxy-terminated polyester obtained from hexanediol, trimethylolpropane, glycerin, pentaerythritol, bisphenol and their alkylene oxide adducts) with (meth) acrylic acid. The polyester (meth) acrylate obtained.
 ウレタン(メタ)アクリレートとしては,多官能イソシアネート{脂環式イソシアネート(イソホロンジイソシアネート及びジシクロヘキシルメタンジイソシアネート等),脂肪族イソシアネート(テトラメチレンジイソシアネート及びヘキサメチレンジイソシアネート等),芳香族イソシアネート(トルエンジイソシアネート,フェニレンジイソシアネート及びジフェニルメタンジイソシアネート等)等}と,多価アルコール{エチレングリコール,ジエチレングリコール,ポリエチレングリコール,プロピレングリコール,ポリプロピレングリコール,ネオペンチルグリコール,ポリテトラメチレングリコール,1,3-ブタンジオール,1,4-ブタンジオール,1,6-ヘキサンジオール,トリメチロールプロパン,グリセリン,ペンタエリスリトール,ビスフェノール,水添ビスフェノール,ポリカプロラクトンジオール,ポリエステルジオール及びポリカーボネートジオール等}とから得たイソシアネート末端のプレポリマーを,ヒドロキシル基含有(メタ)アクリレート{2-ヒドロキシエチル(メタ)アクリレート,2-ヒドロキシプロピル(メタ)アクリレート,4-ヒドロキシブチル(メタ)アクリレート及びペンタエリスリトールのトリ(メタ)アクリレート等}とのウレタン化反応によって得られるウレタン(メタ)アクリレート等が挙げられる。 Urethane (meth) acrylates include polyfunctional isocyanates {alicyclic isocyanates (such as isophorone diisocyanate and dicyclohexylmethane diisocyanate), aliphatic isocyanates (such as tetramethylene diisocyanate and hexamethylene diisocyanate), aromatic isocyanates (toluene diisocyanate, phenylene diisocyanate and Diphenylmethane diisocyanate etc.) and polyhydric alcohol {ethylene glycol, diethylene glycol, polyethylene glycol, propylene glycol, polypropylene glycol, neopentyl glycol, polytetramethylene glycol, 1,3-butanediol, 1,4-butanediol, 1 , 6-hexanediol, trimethylolpropane, glycerin, pe An isocyanate-terminated prepolymer obtained from taerythritol, bisphenol, hydrogenated bisphenol, polycaprolactone diol, polyester diol, polycarbonate diol, etc.} is converted into a hydroxyl group-containing (meth) acrylate {2-hydroxyethyl (meth) acrylate, 2- Hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and pentaerythritol with tri (meth) acrylate, etc.} are urethane (meth) acrylates obtained by urethanization reaction.
 ラジカル重合性化合物を含有する場合,ラジカル重合性化合物の含有量は,光酸発生剤100部に対して,5~400000重量部が好ましく,さらに好ましくは50~150000重量部である。 When the radical polymerizable compound is contained, the content of the radical polymerizable compound is preferably 5 to 400000 parts by weight, more preferably 50 to 150,000 parts by weight with respect to 100 parts of the photoacid generator.
 ラジカル重合性化合物を含有する場合,これらをラジカル重合によって高分子量化するために,熱又は光によって重合を開始するラジカル重合開始剤を使用することが好ましい。 When a radical polymerizable compound is contained, it is preferable to use a radical polymerization initiator that initiates polymerization by heat or light in order to increase the molecular weight by radical polymerization.
 ラジカル重合開始剤としては,公知のラジカル重合開始剤等が使用でき,熱ラジカル重合開始剤及び光ラジカル重合開始剤が含まれる。 As the radical polymerization initiator, a known radical polymerization initiator or the like can be used, and a thermal radical polymerization initiator and a photo radical polymerization initiator are included.
 熱ラジカル重合開始剤としては,有機過酸化物{ケトンパーオキシド(メチルエチルケトンパーオキシド及びシクロヘキサノンパーオキシド等),パーオキシケタール(2,2-ビス(tert-ブチルパーオキシ)ブタン及び1,1-ビス(tert-ブチルパーオキシ)シクロヘキサン等),ヒドロパーオキシド(tert-ブチルヒドロパーオキシド及びクメンヒドロパーオキシド等),ジアルキルパーオキシド(ジ-tert-ブチルパーオキシド等),ジアシルパーオキシド(イソブチリルパーオキシド,ラウロイルパーオキシド及びベンゾイルパーオキシド等),パーオキシジカーボネート(ジイソプロピルパーオキシジカーボネート等),パーオキシエステル(tert-ブチルパーオキシイソブチレート及び2,5-ジメチル-2,5-ジ(ベンゾイルパーオキシ)ヘキサン等)等},及びアゾ化合物{1,1’-アゾビス(シクロヘキサン-1-カルボニトリル),2,2’-アゾビスイソブチロニトリル,2,2’-アゾビス(2,4-ジメチル-4-メトキシバレロニトリル),2,2’-アゾビス(2-メチルプロピオンアミジン)ジヒドロクロリド,2,2’-アゾビス[2-メチル-N-(2-プロペニル)プロピオンアミジン]ジヒドロクロリド,2,2’-アゾビス(2-メチルプロピオンアミド),2,2’-アゾビス[2-メチル-N-(2-ヒドロキシエチル)プロピオンアミド],2,2’-アゾビス(2-メチルプロパン),2,2’-アゾビス(2,4,4-トリメチルペンタン)及びジメチル2,2’-アゾビス(2-メチルプロピオネート)等}等が挙げられる。 As thermal radical polymerization initiators, organic peroxides {ketone peroxides (such as methyl ethyl ketone peroxide and cyclohexanone peroxide), peroxyketals (2,2-bis (tert-butylperoxy) butane and 1,1-bis (Tert-butylperoxy) cyclohexane, etc.), hydroperoxides (such as tert-butylhydroperoxide and cumene hydroperoxide), dialkyl peroxides (such as di-tert-butylperoxide), diacyl peroxides (isobutyryl peroxide) Oxide, lauroyl peroxide and benzoyl peroxide), peroxydicarbonate (diisopropyl peroxydicarbonate, etc.), peroxyester (tert-butylperoxyisobutyrate and 2,5-dimethyl) -2,5-di (benzoylperoxy) hexane, etc.)}, and azo compounds {1,1′-azobis (cyclohexane-1-carbonitrile), 2,2′-azobisisobutyronitrile, 2 2,2′-azobis (2,4-dimethyl-4-methoxyvaleronitrile), 2,2′-azobis (2-methylpropionamidine) dihydrochloride, 2,2′-azobis [2-methyl-N- (2 -Propenyl) propionamidine] dihydrochloride, 2,2'-azobis (2-methylpropionamide), 2,2'-azobis [2-methyl-N- (2-hydroxyethyl) propionamide], 2,2 ' -Azobis (2-methylpropane), 2,2'-azobis (2,4,4-trimethylpentane) and dimethyl 2,2'-azobis (2-methylpropyl) Pioneto) and the like}.
 光ラジカル重合開始剤としては,アセトフェノン開始剤{アセトフェノン,p-tert-ブチルトリクロロアセトフェノン及び2,2-ジエトキシアセトフェノン等},ベンゾフェノン開始剤{ベンゾフェノン,o-ベンゾイル安息香酸メチル及び4-ベンゾイル-4’-メチルジフェニルスルフィド等},ミヒラーケトン開始剤{4,4’-ビス(ジメチルアミノ)ベンゾフェノン及び4,4’-ビス(ジエチルアミノ)ベンゾフェノン等},ベンゾイン開始剤{ベンゾイン,ベンゾインメチルエーテル等},チオキサントン開始剤{チオキサントン,2-メチルチオキサントン,2-エチルチオキサントン,2-クロロチオキサントン,2-イソプロピルチオキサントン及び2,4-ジエチルチオキサントン等}及びアシルホスフィン開始剤{モノアシルホスフィンオキシド及びビスアシルホスフィンオキシド等}等が挙げられる。 Examples of photo radical polymerization initiators include acetophenone initiators {acetophenone, p-tert-butyltrichloroacetophenone and 2,2-diethoxyacetophenone, etc.}, benzophenone initiators {benzophenone, methyl o-benzoylbenzoate and 4-benzoyl-4 '-Methyldiphenyl sulfide, etc.}, Michler's ketone initiator {4,4'-bis (dimethylamino) benzophenone and 4,4'-bis (diethylamino) benzophenone, etc.}, benzoin initiator {benzoin, benzoin methyl ether, etc.}, thioxanthone Initiators {thioxanthone, 2-methylthioxanthone, 2-ethylthioxanthone, 2-chlorothioxanthone, 2-isopropylthioxanthone, 2,4-diethylthioxanthone, etc.} and acyl phosphines Initiator {mono acyl phosphine oxides and bisacylphosphine oxides and the like}.
 ラジカル重合開始剤を含有する場合,ラジカル重合開始剤の含有量は,ラジカル重合性化合物100部に対して,0.01~20重量部が好ましく,さらに好ましくは0.1~10重量部である。 When the radical polymerization initiator is contained, the content of the radical polymerization initiator is preferably 0.01 to 20 parts by weight, more preferably 0.1 to 10 parts by weight with respect to 100 parts of the radical polymerizable compound. .
 本発明のエネルギー線硬化性組成物は,カチオン重合性化合物,光酸発生剤及び必要により添加剤を,室温(20~30℃程度)又は必要により加熱(40~90℃程度)下で,均一に混合溶解するか,またはさらに,3本ロール等で混練して調製することができる。 The energy ray-curable composition of the present invention comprises a cationically polymerizable compound, a photoacid generator, and, if necessary, a uniform additive at room temperature (about 20 to 30 ° C.) or optionally heated (about 40 to 90 ° C.). Can be prepared by kneading with three rolls or the like.
 本発明のエネルギー線硬化性組成物は,エネルギー線を照射することにより硬化させて,硬化体を得ることができる。
 エネルギー線としては,本発明のスルホニウム塩の分解を誘発するエネルギーを有する限りいかなるものでもよいが,低圧,中圧,高圧若しくは超高圧の水銀灯,メタルハライドランプ,LEDランプ,キセノンランプ,カーボンアークランプ,蛍光灯,半導体固体レーザ,アルゴンレーザ,He-Cdレーザ,KrFエキシマレーザ,ArFエキシマレーザ又はFレーザ等から得られる紫外~可視光領域(波長:約100~約800nm)のエネルギー線が好ましい。なお,エネルギー線には,電子線又はX線等の高エネルギーを有する放射線を用いることもできる。
The energy ray-curable composition of the present invention can be cured by irradiating energy rays to obtain a cured product.
As the energy ray, any energy ray may be used as long as it has energy that induces the decomposition of the sulfonium salt of the present invention, but low pressure, medium pressure, high pressure or ultrahigh pressure mercury lamp, metal halide lamp, LED lamp, xenon lamp, carbon arc lamp, Energy rays in the ultraviolet to visible light region (wavelength: about 100 to about 800 nm) obtained from a fluorescent lamp, a semiconductor solid state laser, an argon laser, a He—Cd laser, a KrF excimer laser, an ArF excimer laser, or an F 2 laser are preferable. In addition, the radiation which has high energy, such as an electron beam or an X-ray, can also be used for an energy beam.
 エネルギー線の照射時間は,エネルギー線の強度やエネルギー線硬化性組成物に対するエネルギー線の透過性に影響を受けるが,常温(20~30℃程度)で,0.1秒~10秒程度で十分である。しかしエネルギー線の透過性が低い場合やエネルギー線硬化性組成物の膜厚が厚い場合等にはそれ以上の時間をかけるのが好ましいことがある。エネルギー線照射後0.1秒~数分後には,ほとんどのエネルギー線硬化性組成物はカチオン重合により硬化するが,必要であればエネルギー線の照射後,室温(20~30℃程度)~150℃で数秒~数時間加熱しアフターキュアーすることも可能である。 The irradiation time of the energy beam is affected by the energy beam intensity and the energy beam permeability to the energy beam curable composition, but about 0.1 to 10 seconds is sufficient at room temperature (about 20 to 30 ° C). It is. However, it may be preferable to spend more time when energy beam permeability is low or when the energy beam curable composition is thick. Most energy ray-curable compositions are cured by cationic polymerization within 0.1 seconds to several minutes after irradiation with energy rays, but if necessary, after irradiation with energy rays, room temperature (about 20 to 30 ° C.) to 150 It is also possible to carry out after-curing by heating at a temperature of several seconds to several hours.
 本発明のエネルギー線硬化性組成物の具体的な用途としては,塗料,コーティング剤,各種被覆材料(ハードコート,耐汚染被覆材,防曇被覆材,耐触被覆材,光ファイバー等),粘着テープの背面処理剤,粘着ラベル用剥離シート(剥離紙,剥離プラスチックフィルム,剥離金属箔等)の剥離コーティング材,印刷板,歯科用材料(歯科用配合物,歯科用コンポジット等),インキ,インクジェットインキ,ポジ型レジスト(回路基板,CSP,MEMS素子等の電子部品製造の接続端子や配線パターン形成等に利用),レジストフィルム,液状レジスト,ネガ型レジスト(半導体素子等の表面保護膜,層間絶縁膜,平坦化膜等の永久膜形成等に利用),MEMS用レジスト,ポジ型感光性材料,ネガ型感光性材料,各種接着剤(各種電子部品用仮固定剤,HDD用接着剤,ピックアップレンズ用接着剤,FPD用機能性フィルム(偏向板,反射防止膜等)用接着剤等),ホログラフ用樹脂,FPD材料(カラーフィルター,ブラックマトリックス,隔壁材料,ホトスペーサー,リブ,液晶用配向膜等の形成とFPD用シール剤等に利用),光学部材,成形材料(建築材料用,光学部品,レンズ等),注型材料,パテ,ガラス繊維含浸剤,目止め材,シーリング材,封止材,光半導体(LED)封止材,光導波路材料,ナノインプリント材料,光造用,及びマイクロ光造形用材料等が挙げられる。 Specific applications of the energy ray-curable composition of the present invention include paints, coating agents, various coating materials (hard coat, anti-stain coating, anti-fogging coating, touch-resistant coating, optical fiber, etc.), adhesive tape Back surface treatment agent, Release coating material for adhesive labels (release paper, release plastic film, release metal foil, etc.), printing plate, dental materials (dental compound, dental composite, etc.), ink, inkjet ink , Positive resist (used for forming connection terminals and wiring patterns for manufacturing electronic parts such as circuit boards, CSPs, MEMS elements, etc.), resist films, liquid resists, negative resists (surface protective films for semiconductor elements, interlayer insulation films) ), MEMS resist, positive photosensitive material, negative photosensitive material, various adhesives (electrical materials) Temporary fixing agent for parts, HDD adhesive, pickup lens adhesive, FPD functional film (deflection plate, antireflection film, etc.), holographic resin, FPD material (color filter, black matrix, (Partition materials, photo spacers, ribs, alignment films for liquid crystals, etc. and FPD sealants), optical members, molding materials (for building materials, optical components, lenses, etc.), casting materials, putty, glass fiber Examples thereof include an impregnating agent, a sealing material, a sealing material, a sealing material, an optical semiconductor (LED) sealing material, an optical waveguide material, a nanoimprint material, an optical fabrication material, and a micro stereolithography material.
 本発明のスルホニウム塩は,光照射によって強酸が発生することから,公知(特開2003-267968号,特開2003-261529号,特開2002-193925号等)の化学増幅型レジスト材料用の光酸発生剤等としても使用できる。 Since the sulfonium salt of the present invention generates a strong acid upon irradiation with light, light for chemically amplified resist materials known in the art (JP 2003-267968, JP 2003-261529, JP 2002-193925, etc.) is used. It can also be used as an acid generator.
 化学増幅型レジスト材料としては,(1)酸の作用によりアルカリ現像液に可溶となる樹脂及び光酸発生剤を必須成分とする2成分系化学増幅型ポジ型レジスト,(2)アルカリ現像液に可溶な樹脂,酸の作用によりアルカリ現像液に可溶となる溶解阻害剤及び光酸発生剤を必須成分とする3成分系化学増幅型ポジ型レジスト,並びに(3)アルカリ現像液に可溶な樹脂,酸の存在下で加熱処理することにより樹脂を架橋しアルカリ現像液に不溶とする架橋剤及び光酸発生剤を必須成分とする化学増幅型ネガ型レジストが含まれる。 Chemically amplified resist materials include: (1) a two-component chemically amplified positive resist containing, as essential components, a resin that is soluble in an alkali developer by the action of an acid and a photoacid generator; and (2) an alkali developer. Soluble resin, a three-component chemical amplification type positive resist containing, as essential components, a dissolution inhibitor and a photoacid generator that are soluble in an alkali developer by the action of an acid, and (3) suitable for an alkali developer. A chemically amplified negative resist containing a crosslinking agent that crosslinks the resin by heat treatment in the presence of a soluble resin and an acid and makes the resin insoluble in an alkaline developer and a photoacid generator as an essential component is included.
 以下,実施例により本発明を更に説明するが,本発明はこれに限定されることは意図するものではない。なお,以下特記しない限り,部は重量部,%は重量%を意味する。 Hereinafter, the present invention will be further described with reference to examples, but the present invention is not intended to be limited thereto. Unless otherwise specified, “part” means “part by weight” and “%” means “% by weight”.
(製造例1)[4-(フェニルチオ)フェニル]フェニルスルフィドと[4-(フェニルチオ)フェニル]フェニルスルホキシドの混合物の製造-1
 [4-(フェニルチオ)フェニル]フェニルスルフィド10.0部,アセトニトリル40.0部,硫酸0.17部を仕込み均一に混合後,50℃に昇温して30%過酸化水素水溶液2.31部を10分間かけて滴下した。その後65℃で3時間反応させ,反応溶液を室温(約25℃)まで冷却後,ジクロロメタン120部を加え,蒸留水200部で
pHが中性になるまで分液操作にて洗浄した。ジクロロメタン層をロータリーエバポレーターに移して溶媒を留去することにより,褐色液状の[4-(フェニルチオ)フェニル]フェニルスルフィドを38.7%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを61.3%含む混合物を9.8部得た。[4-(フェニルチオ)フェニル]フェニルスルホキシドのH-NMRデータ:{d6-ジメチルスルホキシド,δ(ppm)7.59~7.70(4H,m),7.40~7.55(8H,m),7.25~7.35(2H,m)}。含有量は混合物のHPLC分析によるピーク面積比より算出した。
(Production Example 1) Production of a mixture of [4- (phenylthio) phenyl] phenyl sulfide and [4- (phenylthio) phenyl] phenyl sulfoxide-1
[4- (Phenylthio) phenyl] phenyl sulfide 10.0 parts, 40.0 parts of acetonitrile, 0.17 parts of sulfuric acid were charged and mixed uniformly, then heated to 50 ° C. and 2.31 parts of 30% aqueous hydrogen peroxide solution Was added dropwise over 10 minutes. Thereafter, the mixture was reacted at 65 ° C. for 3 hours. After cooling the reaction solution to room temperature (about 25 ° C.), 120 parts of dichloromethane was added and washed with 200 parts of distilled water until the pH became neutral. By transferring the dichloromethane layer to a rotary evaporator and distilling off the solvent, 38.7% of [4- (phenylthio) phenyl] phenyl sulfide and 61.3% of [4- (phenylthio) phenyl] phenyl sulfoxide were obtained. 9.8 parts of a mixture containing were obtained. 1 H-NMR data of [4- (phenylthio) phenyl] phenyl sulfoxide: {d6-dimethyl sulfoxide, δ (ppm) 7.59-7.70 (4H, m), 7.40-7.55 (8H, m), 7.25-7.35 (2H, m)}. The content was calculated from the peak area ratio by HPLC analysis of the mixture.
(製造例2)[4-(フェニルチオ)フェニル]フェニルスルフィドと[4-(フェニルチオ)フェニル]フェニルスルホキシドの混合物の製造-2
 30%過酸化水素水溶液2.31部を,2.37部に変更した以外,製造例1と同様にして,褐色液状の[4-(フェニルチオ)フェニル]フェニルスルフィドを37.3%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを62.7%含む混合物を9.8部得た。
Production Example 2 Production of a mixture of [4- (phenylthio) phenyl] phenyl sulfide and [4- (phenylthio) phenyl] phenyl sulfoxide-2
A brown liquid [4- (phenylthio) phenyl] phenyl sulfide was obtained in an amount of 37.3% and [4] in the same manner as in Production Example 1, except that 2.31 parts of 30% hydrogen peroxide aqueous solution was changed to 2.37 parts. 9.8 parts of a mixture containing 62.7% of-(phenylthio) phenyl] phenyl sulfoxide was obtained.
(製造例3)[4-(フェニルチオ)フェニル]フェニルスルフィドと[4-(フェニルチオ)フェニル]フェニルスルホキシドの混合物の製造-3
 30%過酸化水素水溶液2.31部を,2.18部に変更した以外,製造例1と同様にして,褐色液状の[4-(フェニルチオ)フェニル]フェニルスルフィドを42.2%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを57.8%含む混合物を9.8部得た。
Production Example 3 Production of a mixture of [4- (phenylthio) phenyl] phenyl sulfide and [4- (phenylthio) phenyl] phenyl sulfoxide-3
The brown liquid [4- (phenylthio) phenyl] phenyl sulfide was changed to 42.2% and [4] in the same manner as in Production Example 1, except that 2.31 parts of 30% hydrogen peroxide aqueous solution was changed to 2.18 parts. 9.8 parts of a mixture containing 57.8% of-(phenylthio) phenyl] phenyl sulfoxide was obtained.
(製造例4)[4-(フェニルチオ)フェニル]フェニルスルフィドと[4-(フェニルチオ)フェニル]フェニルスルホキシドの混合物の製造-4
 30%過酸化水素水溶液2.31部を,2.02部に変更した以外,製造例1と同様にして,褐色液状の[4-(フェニルチオ)フェニル]フェニルスルフィドを46.3%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを53.7%含む混合物を9.7部得た。
(Production Example 4) Production of a mixture of [4- (phenylthio) phenyl] phenyl sulfide and [4- (phenylthio) phenyl] phenyl sulfoxide-4
46.3% of brownish liquid [4- (phenylthio) phenyl] phenyl sulfide was obtained in the same manner as in Production Example 1 except that 2.31 parts of 30% hydrogen peroxide aqueous solution was changed to 2.02 parts. 9.7 parts of a mixture containing 53.7% of-(phenylthio) phenyl] phenyl sulfoxide was obtained.
(製造例5)〔4-[(2-メチル)フェニルチオ]フェニル〕(2-メチルフェニル)スルフィドと〔4-[(2-メチル)フェニルチオ]フェニル〕(2-メチルフェニル)スルホキシドの混合物の製造
 [4-(フェニルチオ)フェニル]フェニルスルフィド10.0部を,〔4-[(2-メチル)フェニルチオ]フェニル〕(2-メチルフェニル)スルフィド11.0部に,30%過酸化水素水溶液2.31部を,2.18部に変更した以外,製造例1と同様にして,褐色液状の〔4-[(2-メチル)フェニルチオ]フェニル〕(2-メチルフェニル)スルフィドを42.3%と〔4-[(2-メチル)フェニルチオ]フェニル〕(2-メチルフェニル)スルホキシドを57.7%を含む混合物を10.7部得た。〔4-[(2-メチル)フェニルチオ]フェニル〕(2-メチルフェニル)スルホキシドのH-NMRデータ:{d6-ジメチルスルホキシド,δ(ppm)7.40~7.65(5H,m),7.10~7.45(7H,m),2.30~2.40(6H,d)}。各化合物の含有量は混合物のHPLC分析によるピーク面積比より算出した。
Production Example 5 Production of a mixture of [4-[(2-methyl) phenylthio] phenyl] (2-methylphenyl) sulfide and [4-[(2-methyl) phenylthio] phenyl] (2-methylphenyl) sulfoxide 1. 30 parts of a 30% aqueous hydrogen peroxide solution with 10.0 parts of [4- (phenylthio) phenyl] phenyl sulfide and 11.0 parts of [4-[(2-methyl) phenylthio] phenyl] (2-methylphenyl) sulfide The amount of brown liquid [4-[(2-methyl) phenylthio] phenyl] (2-methylphenyl) sulfide was 42.3% as in Production Example 1, except that 31 parts were changed to 2.18 parts. 10.7 parts of a mixture containing 57.7% of [4-[(2-methyl) phenylthio] phenyl] (2-methylphenyl) sulfoxide was obtained. 1 H-NMR data of [4-[(2-methyl) phenylthio] phenyl] (2-methylphenyl) sulfoxide: {d6-dimethylsulfoxide, δ (ppm) 7.40-7.65 (5H, m), 7.10-7.45 (7H, m), 2.30-2.40 (6H, d)}. The content of each compound was calculated from the peak area ratio by HPLC analysis of the mixture.
(製造例6)〔4-[(2-メトキシ)フェニルチオ]フェニル〕(2-メトキシフェニル)スルフィドと〔4-[(2-メトキシ)フェニルチオ]フェニル〕(2-メトキシフェニル)スルホキシドの混合物の製造
 [4-(フェニルチオ)フェニル]フェニルスルフィド10.0部を,〔4-[(2-メトキシ)フェニルチオ]フェニル〕(2-メトキシフェニル)スルフィド12.0部に,30%過酸化水素水溶液2.31部を,2.18部に変更した以外,製造例1と同様にして,褐色液状の〔4-[(2-メトキシ)フェニルチオ]フェニル〕(2-メトキシフェニル)スルフィドを42.4%と〔4-[(2-メトキシ)フェニルチオ]フェニル〕(2-メトキシフェニル)スルホキシドを57.6%を含む混合物を11.7部得た。〔4-[(2-メトキシ)フェニルチオ]フェニル〕(2-メトキシフェニル)スルホキシドのH-NMRデータ:{d6-ジメチルスルホキシド,δ(ppm)7.35~7.45(5H,m),7.00~7.35(7H,m),3.60~3.75(6H,d)}。各化合物の含有量は混合物のHPLC分析によるピーク面積比より算出した。
Production Example 6 Production of a mixture of [4-[(2-methoxy) phenylthio] phenyl] (2-methoxyphenyl) sulfide and [4-[(2-methoxy) phenylthio] phenyl] (2-methoxyphenyl) sulfoxide 1. 30 parts of a 30% aqueous hydrogen peroxide solution with 10.0 parts of [4- (phenylthio) phenyl] phenyl sulfide and 12.0 parts of [4-[(2-methoxy) phenylthio] phenyl] (2-methoxyphenyl) sulfide The amount of brown liquid [4-[(2-methoxy) phenylthio] phenyl] (2-methoxyphenyl) sulfide was 42.4% as in Production Example 1, except that 31 parts were changed to 2.18 parts. 11.7 parts of a mixture containing 57.6% of [4-[(2-methoxy) phenylthio] phenyl] (2-methoxyphenyl) sulfoxide was obtained. It was. 1 H-NMR data of [4-[(2-methoxy) phenylthio] phenyl] (2-methoxyphenyl) sulfoxide: {d6-dimethylsulfoxide, δ (ppm) 7.35-7.45 (5H, m), 7.00-7.35 (7H, m), 3.60-3.75 (6H, d)}. The content of each compound was calculated from the peak area ratio by HPLC analysis of the mixture.
(製造例7)2-(フェニルチオ)チオキサントンの合成
 2-クロロチオキサントン11.0部,チオフェノール4.9部,水酸化カリウム2.5部及びN,N-ジメチルホルムアミド162部を均一混合し,130℃で9時間反応させた後,反応溶液を室温(約25℃)まで冷却し,蒸留水200部中に投入し,生成物を析出させた。これをろ過し,残渣を水で濾液のpHが中性になるまで洗浄した後,残渣を減圧乾燥させ,黄色粉末状の生成物を得た。カラムクロマトグラフィー(溶離液:トルエン/ヘキサン=1/1:容量比)にて生成物を精製して,2-(フェニルチオ)チオキサントンを収率45%で得た。生成物はH-NMRにて同定した{d6-ジメチルスルホキシド,δ(ppm)8.43(1H,d),8.25(1H,s),7.75~7.90(3H,m),7.66(1H,d),7.60(1H,t),7.42~7.46(5H,m)}。
(Production Example 7) Synthesis of 2- (phenylthio) thioxanthone 11.0 parts of 2-chlorothioxanthone, 4.9 parts of thiophenol, 2.5 parts of potassium hydroxide and 162 parts of N, N-dimethylformamide were uniformly mixed. After reacting at 130 ° C. for 9 hours, the reaction solution was cooled to room temperature (about 25 ° C.) and poured into 200 parts of distilled water to precipitate the product. This was filtered, and the residue was washed with water until the pH of the filtrate became neutral, and then the residue was dried under reduced pressure to obtain a yellow powdery product. The product was purified by column chromatography (eluent: toluene / hexane = 1/1: volume ratio) to give 2- (phenylthio) thioxanthone in a yield of 45%. The product was identified by 1 H-NMR {d6-dimethylsulfoxide, δ (ppm) 8.43 (1H, d), 8.25 (1H, s), 7.75-7.90 (3H, m ), 7.66 (1H, d), 7.60 (1H, t), 7.42-7.46 (5H, m)}.
〔実施例1〕
 フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェート〔化合物(a)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[トリス(ペンタフルオロエチル)トリフルオロホスフェート]〔化合物(b)〕の混合物の製造-1
[Example 1]
Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tris (pentafluoroethyl) trifluorophosphate [compound (a)] and 1,4-bis {4-[[4- (phenylthio)] Preparation of a mixture of phenylphenyl] sulfonio] phenylthio} benzene bis [tris (pentafluoroethyl) trifluorophosphate] [compound (b)]-1
Figure JPOXMLDOC01-appb-C000014
 
Figure JPOXMLDOC01-appb-C000014
 
Figure JPOXMLDOC01-appb-C000015
 
Figure JPOXMLDOC01-appb-C000015
 
 製造例1で製造した混合物〔[4-(フェニルチオ)フェニル]フェニルスルフィドを39%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを61%含む混合物〕4.6部,無水酢酸2.8部及びアセトニトリル16.5部を仕込み,均一に混合後,トリフルオロメタンスルホン酸1.6部を室温で滴下した。その後,60℃で2時間反応させ,反応溶液を室温(約25℃)まで冷却し,蒸留水100部の中に投入し,ジクロロメタン80部で抽出し,水層のpHが中性になるまで水で洗浄した。ジクロロメタン層をロータリーエバポレーターに移して,溶媒を留去し,褐色液状の生成物を得た。これに酢酸エチル5部を加え,60℃の水浴中で溶解させた後,ヘキサン50部を加え撹拌した後,冷蔵庫(約5℃)で30分間静置してから上澄みを除く操作を2回行い,生成物を洗浄した。残渣をロータリーエバポレーターに移して溶媒を留去することにより,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム トリフレート(トリフレート=トリフルオロメタンスルホン酸アニオン)と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス(トリフレート)の混合物を4.9部得た。 Mixture prepared in Preparation Example 1 [mixture containing 39% of [4- (phenylthio) phenyl] phenyl sulfide and 61% of [4- (phenylthio) phenyl] phenyl sulfoxide], 2.8 parts of acetic anhydride, and 16.5 parts of acetonitrile was charged and mixed uniformly, and 1.6 parts of trifluoromethanesulfonic acid was added dropwise at room temperature. Thereafter, the reaction is carried out at 60 ° C. for 2 hours, the reaction solution is cooled to room temperature (about 25 ° C.), poured into 100 parts of distilled water, extracted with 80 parts of dichloromethane, and until the pH of the aqueous layer becomes neutral. Washed with water. The dichloromethane layer was transferred to a rotary evaporator and the solvent was distilled off to obtain a brown liquid product. After adding 5 parts of ethyl acetate and dissolving in a 60 ° C water bath, adding 50 parts of hexane and stirring, let stand for 30 minutes in a refrigerator (about 5 ° C) and then remove the supernatant twice. And the product was washed. By transferring the residue to a rotary evaporator and distilling off the solvent, phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium triflate (triflate = trifluoromethanesulfonic acid anion) and 1,4 4.9 parts of a mixture of -bis {4-[[4- (phenylthio) phenylphenyl] sulfonio] phenylthio} benzene bis (triflate) was obtained.
 上記トリフレートをジクロロメタン75部に溶かし,10%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液52.7部の中に投入してから,室温(約25℃)で3時間撹拌し,ジクロロメタン層を分液後,水で3回洗浄し,有機層をロータリーエバポレーターに移して溶媒を留去することにより,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェート〔化合物(a)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[トリス(ペンタフルオロエチル)トリフルオロホスフェート]〔化合物(b)〕の混合物〔化合物(a)と化合物(b)のモル比率はそれぞれ,50モル%,50モル%であった〕を7.2部得た。生成物はH-NMR,赤外吸光分光分析(IR),LC-MSにて同定した。{H-NMR:d6-ジメチルスルホキシド;δ(ppm)7.6~8.0(m),7.3~7.6(m)。IR(KBr錠剤法:C-F結合特性吸収;1200cm-1付近。LC-MS:化合物(a)の分子イオンピーク;588,化合物(b)の分子イオンピーク;441}。また,混合物の比率(モル%)はHPLC分析によるピーク面積比より算出した。 The above triflate is dissolved in 75 parts of dichloromethane, charged into 52.7 parts of 10% aqueous potassium tris (pentafluoroethyl) trifluorophosphate, and stirred at room temperature (about 25 ° C.) for 3 hours. After liquid separation, washing with water three times, transferring the organic layer to a rotary evaporator and distilling off the solvent, phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tris (pentafluoro Ethyl) trifluorophosphate [compound (a)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl] sulfonio] phenylthio} benzene bis [tris (pentafluoroethyl) trifluorophosphate] [compound ( b)] [mole of compound (a) and compound (b) The ratio was 50 mol% and 50 mol%, respectively]. 7.2 parts were obtained. The product was identified by 1 H-NMR, infrared absorption spectroscopy (IR), and LC-MS. { 1 H-NMR: d6-dimethyl sulfoxide; δ (ppm) 7.6 to 8.0 (m), 7.3 to 7.6 (m). IR (KBr tablet method: CF bond characteristic absorption; around 1200 cm −1. LC-MS: molecular ion peak of compound (a); 588, molecular ion peak of compound (b); 441}, and ratio of the mixture (Mole%) was calculated from the peak area ratio by HPLC analysis.
〔実施例2〕
 フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェート〔化合物(a)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[トリス(ペンタフルオロエチル)トリフルオロホスフェート]〔化合物(b)〕の混合物の製造-2
 製造例1で製造した[4-(フェニルチオ)フェニル]フェニルスルフィドを39%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを61%含む混合物4.6部を,製造例2で製造した[4-(フェニルチオ)フェニル]フェニルスルフィドを37%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを63%含む混合物4.5部に変更した以外は,実施例1と同様にして,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェート〔化合物(a)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[トリス(ペンタフルオロエチル)トリフルオロホスフェート]〔化合物(b)〕の混合物〔化合物(a)と化合物(b)のモル比率はそれぞれ,40モル%,60モル%であった〕を7.1部得た。
[Example 2]
Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tris (pentafluoroethyl) trifluorophosphate [compound (a)] and 1,4-bis {4-[[4- (phenylthio)] Preparation of a mixture of phenylphenyl] sulfonio] phenylthio} benzene bis [tris (pentafluoroethyl) trifluorophosphate] [compound (b)]-2
4.6 parts of a mixture containing 39% of [4- (phenylthio) phenyl] phenylsulfide prepared in Preparation Example 1 and 61% of [4- (phenylthio) phenyl] phenylsulfoxide was prepared in Preparation Example 2 [4- In the same manner as in Example 1, except that the mixture was changed to 4.5 parts of a mixture containing 37% of (phenylthio) phenyl] phenyl sulfide and 63% of [4- (phenylthio) phenyl] phenyl sulfoxide, phenyl [4- (4 -Phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tris (pentafluoroethyl) trifluorophosphate [compound (a)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl] sulfonio] phenylthio } Benzene bis [tris (pentafluoroethyl) trifluorophosphate 7.1 parts of a mixture of [sulfate] [compound (b)] (molar ratios of compound (a) and compound (b) were 40 mol% and 60 mol%, respectively) were obtained.
〔実施例3〕
 フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェート〔化合物(a)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[トリス(ペンタフルオロエチル)トリフルオロホスフェート]〔化合物(b)〕の混合物の製造-3
 製造例1で製造した[4-(フェニルチオ)フェニル]フェニルスルフィドを39%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを61含む混合物4.6部を,製造例3で製造した[4-(フェニルチオ)フェニル]フェニルスルフィドを42%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを58%含む混合物4.9部に変更した以外は,実施例1と同様にして,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェート〔化合物(a)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[トリス(ペンタフルオロエチル)トリフルオロホスフェート]〔化合物(b)〕の混合物〔化合物(a)と化合物(b)のモル比率はそれぞれ,70モル%,30モル%であった〕を7.4部得た。
Example 3
Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tris (pentafluoroethyl) trifluorophosphate [compound (a)] and 1,4-bis {4-[[4- (phenylthio)] Phenylphenyl] sulfonio] phenylthio} benzene Preparation of a mixture of bis [tris (pentafluoroethyl) trifluorophosphate] [compound (b)]-3
4.6 parts of a mixture containing 39% of [4- (phenylthio) phenyl] phenylsulfide prepared in Preparation Example 1 and 61 of [4- (phenylthio) phenyl] phenylsulfoxide was prepared in Preparation Example 3. In the same manner as in Example 1, except that the mixture was changed to 4.9 parts of a mixture containing 42% of phenylthio) phenyl] phenyl sulfide and 58% of [4- (phenylthio) phenyl] phenyl sulfoxide. Phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium Tris (pentafluoroethyl) trifluorophosphate [compound (a)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl] sulfonio] phenylthio} Benzene bis [tris (pentafluoroethyl) trifluorophos 7.4 parts of a mixture of [fate] [compound (b)] (molar ratios of compound (a) and compound (b) were 70 mol% and 30 mol%, respectively) were obtained.
〔実施例4〕
 フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェート〔化合物(a)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[トリス(ペンタフルオロエチル)トリフルオロホスフェート]〔化合物(b)〕の混合物の製造-4
 製造例1で製造した[4-(フェニルチオ)フェニル]フェニルスルフィドを39%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを61%含む混合物4.6部を,製造例4で製造した[4-(フェニルチオ)フェニル]フェニルスルフィドを46%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを54%含む混合物5.2部に変更した以外は,実施例1と同様にして,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェート〔化合物(a)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[トリス(ペンタフルオロエチル)トリフルオロホスフェート]〔化合物(b)〕の混合物〔化合物(a)と化合物(b)のモル比率はそれぞれ,90モル%,10モル%であった〕を7.8部得た。
Example 4
Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tris (pentafluoroethyl) trifluorophosphate [compound (a)] and 1,4-bis {4-[[4- (phenylthio)] Phenylphenyl] sulfonio] phenylthio} benzene Preparation of a mixture of bis [tris (pentafluoroethyl) trifluorophosphate] [compound (b)]-4
4.6 parts of a mixture containing 39% of [4- (phenylthio) phenyl] phenyl sulfide prepared in Preparation Example 1 and 61% of [4- (phenylthio) phenyl] phenyl sulfoxide was prepared in Preparation Example 4. In the same manner as in Example 1, except that the mixture was changed to 5.2 parts of a mixture containing 46% (phenylthio) phenyl] phenylsulfide and 54% [4- (phenylthio) phenyl] phenylsulfoxide, phenyl [4- (4 -Phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tris (pentafluoroethyl) trifluorophosphate [compound (a)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl] sulfonio] phenylthio } Benzene bis [tris (pentafluoroethyl) trifluorophosphate 7.8 parts of a mixture of [sulfate] [compound (b)] (molar ratios of compound (a) and compound (b) were 90 mol% and 10 mol%, respectively) were obtained.
〔実施例5〕
 フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレート〔化合物(c)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[テトラキス(ペンタフルオロフェニル)ボレート]〔化合物(d)〕の混合物の製造-1
Example 5
Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (c)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl Sulphonio] phenylthio} benzene Preparation of a mixture of bis [tetrakis (pentafluorophenyl) borate] [compound (d)]-1
Figure JPOXMLDOC01-appb-C000016
 
Figure JPOXMLDOC01-appb-C000016
 
Figure JPOXMLDOC01-appb-C000017
 
Figure JPOXMLDOC01-appb-C000017
 
 「10%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液52.7部」を「10%テトラキス(ペンタフルオロフェニル)ホウ酸リチウム水溶液74.6部」に変更したこと以外,実施例1と同様にして,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレート〔化合物(c)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[テトラキス(ペンタフルオロフェニル)ボレート]〔化合物(d)〕の混合物〔化合物(c)と化合物(d)のモル比率はそれぞれ,50モル%,50モル%であった〕を9.0部得た。生成物はH-NMR,赤外吸光分光分析(IR),LC-MSにて同定した。{H-NMR:d6-ジメチルスルホキシド;δ(ppm)7.6~8.0(m),7.3~7.6(m)。IR(KBr錠剤法):B-C結合特性吸収;980cm-1付近。LC-MS:化合物(c)の分子イオンピーク;588,化合物(d)の分子イオンピーク;441}。また,混合物の比率(モル%)はHPLC分析によるピーク面積比より算出した。 Except that “10% tris (pentafluoroethyl) potassium trifluorophosphate aqueous solution 52.7 parts” was changed to “10% tetrakis (pentafluorophenyl) lithium borate aqueous solution 74.6 parts”, the same procedure as in Example 1 was performed. Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (c)] and 1,4-bis {4-[[4- (phenylthio)] Phenylphenyl] sulfonio] phenylthio} benzene mixture of bis [tetrakis (pentafluorophenyl) borate] [compound (d)] [molar ratios of compound (c) and compound (d) are 50 mol% and 50 mol%, respectively. 9.0 parts were obtained. The product was identified by 1 H-NMR, infrared absorption spectroscopy (IR), and LC-MS. { 1 H-NMR: d6-dimethyl sulfoxide; δ (ppm) 7.6 to 8.0 (m), 7.3 to 7.6 (m). IR (KBr tablet method): BC bond characteristic absorption; near 980 cm −1 . LC-MS: molecular ion peak of compound (c); 588, molecular ion peak of compound (d); 441}. The ratio (mol%) of the mixture was calculated from the peak area ratio by HPLC analysis.
〔実施例6〕
 フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレート〔化合物(c)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[テトラキス(ペンタフルオロフェニル)ボレート]〔化合物(d)〕の混合物の製造-2
 「10%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液52.7部」を「10%テトラキス(ペンタフルオロフェニル)ホウ酸リチウム水溶液74.6部」に変更したこと以外,実施例2と同様にして,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレート〔化合物(c)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[テトラキス(ペンタフルオロフェニル)ボレート]〔化合物(d)〕の混合物〔化合物(c)と化合物(d)のモル比率はそれぞれ,40モル%,60モル%であった〕を8.9部得た。
Example 6
Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (c)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl Sulphonio] phenylthio} benzene Preparation of a mixture of bis [tetrakis (pentafluorophenyl) borate] [compound (d)]-2
Except that “10% tris (pentafluoroethyl) potassium trifluorophosphate aqueous solution 52.7 parts” was changed to “10% tetrakis (pentafluorophenyl) lithium borate aqueous solution 74.6 parts”, the same procedure as in Example 2 was performed. Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (c)] and 1,4-bis {4-[[4- (phenylthio)] Phenylphenyl] sulfonio] phenylthio} benzene A mixture of bis [tetrakis (pentafluorophenyl) borate] [compound (d)] [molar ratios of compound (c) and compound (d) are 40 mol% and 60 mol%, respectively. 8.9 parts were obtained.
〔実施例7〕
 フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレート〔化合物(c)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[テトラキス(ペンタフルオロフェニル)ボレート]〔化合物(d)〕の混合物の製造-3
 「10%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液52.7部」を「10%テトラキス(ペンタフルオロフェニル)ホウ酸リチウム水溶液74.6部」に変更したこと以外,実施例3と同様にして,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレート〔化合物(c)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[テトラキス(ペンタフルオロフェニル)ボレート]〔化合物(d)〕の混合物〔化合物(c)と化合物(d)のモル比率はそれぞれ,70モル%,30モル%であった〕を9.2部得た。
Example 7
Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (c)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl Sulphonio] phenylthio} benzene Preparation of a mixture of bis [tetrakis (pentafluorophenyl) borate] [compound (d)]-3
Except that “10% tris (pentafluoroethyl) potassium trifluorophosphate aqueous solution 52.7 parts” was changed to “10% tetrakis (pentafluorophenyl) lithium borate aqueous solution 74.6 parts”, the same procedure as in Example 3 was performed. Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (c)] and 1,4-bis {4-[[4- (phenylthio)] Phenylphenyl] sulfonio] phenylthio} benzene Mixture of bis [tetrakis (pentafluorophenyl) borate] [compound (d)] [molar ratios of compound (c) and compound (d) are 70 mol% and 30 mol%, respectively. 9.2 parts were obtained.
〔実施例8〕
 フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレート〔化合物(c)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[テトラキス(ペンタフルオロフェニル)ボレート]〔化合物(d)〕の混合物の製造-4
 「10%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液52.7部」を「10%テトラキス(ペンタフルオロフェニル)ホウ酸リチウム水溶液74.6部」に変更したこと以外,実施例4と同様にして,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレート〔化合物(c)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[テトラキス(ペンタフルオロフェニル)ボレート]〔化合物(d)〕の混合物〔化合物(c)と化合物(d)のモル比率はそれぞれ,90モル%,10モル%であった〕を9.6部得た。
Example 8
Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (c)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl Sulphonio] phenylthio} benzene Preparation of a mixture of bis [tetrakis (pentafluorophenyl) borate] [compound (d)]-4
Except that “10% tris (pentafluoroethyl) potassium trifluorophosphate aqueous solution 52.7 parts” was changed to “10% tetrakis (pentafluorophenyl) lithium borate aqueous solution 74.6 parts”, the same procedure as in Example 4 was performed. Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (c)] and 1,4-bis {4-[[4- (phenylthio)] Phenylphenyl] sulfonio] phenylthio} benzene A mixture of bis [tetrakis (pentafluorophenyl) borate] [compound (d)] [molar ratios of compound (c) and compound (d) are 90 mol% and 10 mol%, respectively. 9.6 parts were obtained.
〔実施例9〕
 フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム ヘキサフルオロアンチモネート〔化合物(e)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[ヘキサフルオロアンチモネート]〔化合物(f)〕の混合物の製造
Example 9
Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium hexafluoroantimonate [compound (e)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl] sulfonio] Preparation of a mixture of phenylthio} benzene bis [hexafluoroantimonate] [compound (f)]
Figure JPOXMLDOC01-appb-C000018
 
Figure JPOXMLDOC01-appb-C000018
 
Figure JPOXMLDOC01-appb-C000019
 
Figure JPOXMLDOC01-appb-C000019
 
 「10%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液52.7部」を「5%ヘキサフルオロアンチモン酸カリウム水溶液59.8部」に変更したこと以外,実施例3と同様にして,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム ヘキサフルオロアンチモネート〔化合物(e)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[ヘキサフルオロアンチモネート]〔化合物(f)〕の混合物〔化合物(e)と化合物(f)のモル比率はそれぞれ,70モル%,30モル%であった〕を5.8部得た。
生成物はH-NMR,赤外吸光分光分析(IR),LC-MSにて同定した。{H-NMR:d6-ジメチルスルホキシド;δ(ppm)7.6~8.0(m),7.3~7.6(m)。IR(KBr錠剤法):Sb-F結合特性吸収;650cm-1付近。LC-MS:化合物(e)の分子イオンピーク;588,化合物(f)の分子イオンピーク;441}。また,混合物の比率(モル%)はHPLC分析によるピーク面積比より算出した。
In the same manner as in Example 3 except that “10% tris (pentafluoroethyl) potassium trifluorophosphate aqueous solution 52.7 parts” was changed to “5% potassium hexafluoroantimonate aqueous solution 59.8 parts”, phenyl [ 4- (4-Phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium hexafluoroantimonate [compound (e)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl] sulfonio] phenylthio} 5.8 parts of a mixture of benzene bis [hexafluoroantimonate] [compound (f)] (molar ratios of compound (e) and compound (f) were 70 mol% and 30 mol%, respectively) were obtained. .
The product was identified by 1 H-NMR, infrared absorption spectroscopy (IR), and LC-MS. { 1 H-NMR: d6-dimethyl sulfoxide; δ (ppm) 7.6 to 8.0 (m), 7.3 to 7.6 (m). IR (KBr tablet method): Sb—F bond characteristic absorption; around 650 cm −1 . LC-MS: molecular ion peak of compound (e); 588, molecular ion peak of compound (f); 441}. The ratio (mol%) of the mixture was calculated from the peak area ratio by HPLC analysis.
〔実施例10〕
 フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム ヘキサフルオロホスフェート〔化合物(g)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[ヘキサフルオロホスフェート]〔化合物(h)〕の混合物の製造
Example 10
Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium hexafluorophosphate [compound (g)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl] sulfonio] phenylthio } Production of a mixture of benzene bis [hexafluorophosphate] [compound (h)]
Figure JPOXMLDOC01-appb-C000020
 
Figure JPOXMLDOC01-appb-C000020
 
Figure JPOXMLDOC01-appb-C000021
 
Figure JPOXMLDOC01-appb-C000021
 
 「10%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液52.7部」を「5%ヘキサフルオロリン酸カリウム水溶液40.1部」に変更したこと以外,実施例3と同様にして,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム ヘキサフルオロホスフェート〔化合物(g)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[ヘキサフルオロホスフェート]〔化合物(h)〕の混合物〔化合物(g)と化合物(h)のモル比率はそれぞれ,70モル%,30モル%であった〕を5.2部得た。
 生成物はH-NMR,赤外吸光分光分析(IR),LC-MSにて同定した。{H-NMR:d6-ジメチルスルホキシド;δ(ppm)7.6~8.0(m),7.3~7.6(m)。IR(KBr錠剤法):P-F結合特性吸収;840cm-1付近。LC-MS:化合物(g)の分子イオンピーク;588,化合物(h)の分子イオンピーク;441}。また,混合物の比率(モル%)はHPLC分析によるピーク面積比より算出した。
In the same manner as in Example 3 except that “52.7 parts of 10% aqueous potassium tris (pentafluoroethyl) trifluorophosphate” was changed to “40.1 parts of 5% aqueous potassium hexafluorophosphate”, phenyl [ 4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium hexafluorophosphate [compound (g)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl] sulfonio] phenylthio} benzene 5.2 parts of a mixture of bis [hexafluorophosphate] [compound (h)] [molar ratios of compound (g) and compound (h) were 70 mol% and 30 mol%, respectively] were obtained.
The product was identified by 1 H-NMR, infrared absorption spectroscopy (IR), and LC-MS. { 1 H-NMR: d6-dimethyl sulfoxide; δ (ppm) 7.6 to 8.0 (m), 7.3 to 7.6 (m). IR (KBr tablet method): PF bond characteristic absorption; around 840 cm −1 . LC-MS: molecular ion peak of compound (g); 588, molecular ion peak of compound (h); 441}. The ratio (mol%) of the mixture was calculated from the peak area ratio by HPLC analysis.
〔実施例11〕
 (2-メチル)フェニル{〔4-[4-(2-メチル)フェニルチオ]フェニルチオ〕-3-メチル-フェニル}[4-(2-メチル)フェニルチオ]フェニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェート〔化合物(i)〕と1,4-ビス{4-〔[4-((2-メチル)フェニルチオ)フェニル(2-メチル)フェニル]スルホニオ〕-2-(メチル)フェニルチオ}ベンゼン ビス[トリス(ペンタフルオロエチル)トリフルオロホスフェート]〔化合物(j)〕の混合物の製造
Example 11
(2-methyl) phenyl {[4- [4- (2-methyl) phenylthio] phenylthio] -3-methyl-phenyl} [4- (2-methyl) phenylthio] phenylsulfonium tris (pentafluoroethyl) trifluorophosphate [Compound (i)] and 1,4-bis {4-[[4-((2-methyl) phenylthio) phenyl (2-methyl) phenyl] sulfonio] -2- (methyl) phenylthio} benzene bis [tris ( Preparation of a mixture of (pentafluoroethyl) trifluorophosphate] [compound (j)]
Figure JPOXMLDOC01-appb-C000022
 
Figure JPOXMLDOC01-appb-C000022
 
Figure JPOXMLDOC01-appb-C000023
 
Figure JPOXMLDOC01-appb-C000023
 
 製造例1で製造した[4-(フェニルチオ)フェニル]フェニルスルフィドを39%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを61%含む混合物4.6部を,製造例5で製造した〔4-[(2-メチル)フェニルチオ]フェニル〕(2-メチルフェニル)スルフィドを42%と〔4-[(2-メチル)フェニルチオ]フェニル〕(2-メチルフェニル)スルホキシドを58%を含む混合物5.3部に変更した以外,実施例1と同様にして,(2-メチル)フェニル〔4-[4-(2-メチル)フェニルチオ]フェニルチオ〕フェニル[4-(2-メチル)フェニルチオ]フェニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェート〔化合物(i)〕と1,4-ビス{4-〔[4-((2-メチル)フェニルチオ)フェニル(2-メチル)フェニル]スルホニオ〕-2-(メチル)フェニルチオ}ベンゼン ビス[トリス(ペンタフルオロエチル)トリフルオロホスフェート]〔化合物(j)〕の混合物〔化合物(i)と化合物(j)のモル比率はそれぞれ,70モル%,30モル%であった〕を7.8部得た。
 生成物はH-NMR,赤外吸光分光分析(IR),LC-MSにて同定した。{H-NMR:d6-ジメチルスルホキシド;δ(ppm)7.6~8.0(m),7.3~7.6(m),2.3~2.4(m)。IR(KBr錠剤法):C-F結合特性吸収;1200cm-1付近。LC-MS:化合物(i)の分子イオンピーク;644,化合物(j)の分子イオンピーク;483}。また,混合物の比率(モル%)はHPLC分析によるピーク面積比より算出した。
4.6 parts of a mixture containing 39% of [4- (phenylthio) phenyl] phenyl sulfide prepared in Preparation Example 1 and 61% of [4- (phenylthio) phenyl] phenyl sulfoxide was prepared in Preparation Example 5. A mixture containing 42% [(2-methyl) phenylthio] phenyl] (2-methylphenyl) sulfide and 58% [4-[(2-methyl) phenylthio] phenyl] (2-methylphenyl) sulfoxide 5.3 (2-Methyl) phenyl [4- [4- (2-methyl) phenylthio] phenylthio] phenyl [4- (2-methyl) phenylthio] phenylsulfonium tris () Pentafluoroethyl) trifluorophosphate [compound (i)] and 1,4-bis {4-[[4-((2-methyl) phenyl] Nylthio) phenyl (2-methyl) phenyl] sulfonio] -2- (methyl) phenylthio} benzene A mixture of bis [tris (pentafluoroethyl) trifluorophosphate] [compound (j)] [compound (i) and compound (j) ) Was 70 mol% and 30 mol%, respectively].
The product was identified by 1 H-NMR, infrared absorption spectroscopy (IR), and LC-MS. { 1 H-NMR: d6-dimethyl sulfoxide; δ (ppm) 7.6 to 8.0 (m), 7.3 to 7.6 (m), 2.3 to 2.4 (m). IR (KBr tablet method): CF bond characteristic absorption; around 1200 cm −1 . LC-MS: molecular ion peak of compound (i); 644, molecular ion peak of compound (j); 483}. The ratio (mol%) of the mixture was calculated from the peak area ratio by HPLC analysis.
〔実施例12〕
 (2-メチル)フェニル{〔4-[4-(2-メチル)フェニルチオ]フェニルチオ〕-3-メチル-フェニル}[4-(2-メチル)フェニルチオ]フェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレート〔化合物(k)〕と1,4-ビス{4-〔[4-((2-メチル)フェニルチオ)フェニル(2-メチル)フェニル]スルホニオ〕-2-(メチル)フェニルチオ}ベンゼン ビス[テトラキス(ペンタフルオロフェニル)ボレート]〔化合物(m)〕の混合物の製造
Example 12
(2-methyl) phenyl {[4- [4- (2-methyl) phenylthio] phenylthio] -3-methyl-phenyl} [4- (2-methyl) phenylthio] phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (K)] and 1,4-bis {4-[[4-((2-methyl) phenylthio) phenyl (2-methyl) phenyl] sulfonio] -2- (methyl) phenylthio} benzene bis [tetrakis (pentafluoro Of phenyl) borate] [compound (m)]
Figure JPOXMLDOC01-appb-C000024
 
Figure JPOXMLDOC01-appb-C000024
 
Figure JPOXMLDOC01-appb-C000025
 
Figure JPOXMLDOC01-appb-C000025
 
 製造例1で製造した[4-(フェニルチオ)フェニル]フェニルスルフィドを39%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを61%含む混合物4.6部を,製造例5で製造した〔4-[(2-メチル)フェニルチオ]フェニル〕(2-メチルフェニル)スルフィドを42%と〔4-[(2-メチル)フェニルチオ]フェニル〕(2-メチルフェニル)スルホキシドを58%を含む混合物5.3部に変更し,且つ「10%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液52.7部」を「10%テトラキス(ペンタフルオロフェニル)ホウ酸リチウム水溶液74.6部」に変更した以外,実施例1と同様にして,(2-メチル)フェニル〔4-[4-(2-メチル)フェニルチオ]フェニルチオ〕フェニル[4-(2-メチル)フェニルチオ]フェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレート〔化合物(k)〕と1,4-ビス{4-〔[4-((2-メチル)フェニルチオ)フェニル(2-メチル)フェニル]スルホニオ〕-2-(メチル)フェニルチオ}ベンゼン ビス[テトラキス(ペンタフルオロフェニル)ボレート]〔化合物(m)〕の混合物〔化合物(k)と化合物(m)のモル比率はそれぞれ,70モル%,30モル%であった〕を9.6部得た。
 生成物はH-NMR,赤外吸光分光分析(IR),LC-MSにて同定した。{H-NMR:d6-ジメチルスルホキシド;δ(ppm)7.6~8.0(m),7.3~7.6(m),2.3~2.4(m)。IR(KBr錠剤法):B-C結合特性吸収;980cm-1付近。LC-MS:化合物(k)の分子イオンピーク;644,化合物(m)の分子イオンピーク;483}。また,混合物の比率(モル%)はHPLC分析によるピーク面積比より算出した。 
4.6 parts of a mixture containing 39% of [4- (phenylthio) phenyl] phenyl sulfide prepared in Preparation Example 1 and 61% of [4- (phenylthio) phenyl] phenyl sulfoxide was prepared in Preparation Example 5. A mixture containing 42% [(2-methyl) phenylthio] phenyl] (2-methylphenyl) sulfide and 58% [4-[(2-methyl) phenylthio] phenyl] (2-methylphenyl) sulfoxide 5.3 Except that “10% tris (pentafluoroethyl) potassium trifluorophosphate aqueous solution 52.7 parts” was changed to “10% tetrakis (pentafluorophenyl) lithium borate aqueous solution 74.6 parts”. In the same manner as in Example 1, (2-methyl) phenyl [4- [4- (2-methyl) phenylthio] phenylthio] phen [4- (2-methyl) phenylthio] phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (k)] and 1,4-bis {4-[[4-((2-methyl) phenylthio) phenyl (2 -Methyl) phenyl] sulfonio] -2- (methyl) phenylthio} benzene A mixture of bis [tetrakis (pentafluorophenyl) borate] [compound (m)] [molar ratio of compound (k) and compound (m) is 9.6 parts were obtained.
The product was identified by 1 H-NMR, infrared absorption spectroscopy (IR), and LC-MS. { 1 H-NMR: d6-dimethyl sulfoxide; δ (ppm) 7.6 to 8.0 (m), 7.3 to 7.6 (m), 2.3 to 2.4 (m). IR (KBr tablet method): BC bond characteristic absorption; near 980 cm −1 . LC-MS: molecular ion peak of compound (k); 644, molecular ion peak of compound (m); 483}. The ratio (mol%) of the mixture was calculated from the peak area ratio by HPLC analysis.
〔実施例13〕
 (2-メトキシ)フェニル{〔4-[4-(2-メトキシ)フェニルチオ]フェニルチオ〕-3-メトキシ-フェニル}[4-(2-メトキシ)フェニルチオ]フェニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェート〔化合物(n)〕と1,4-ビス{4-〔[4-((2-メトキシ)フェニルチオ)フェニル(2-メトキシ)フェニル]スルホニオ〕-2-(メトキシ)フェニルチオ}ベンゼン ビス[トリス(ペンタフルオロエチル)トリフルオロホスフェート]〔化合物(o)〕の混合物の製造
Example 13
(2-methoxy) phenyl {[4- [4- (2-methoxy) phenylthio] phenylthio] -3-methoxy-phenyl} [4- (2-methoxy) phenylthio] phenylsulfonium tris (pentafluoroethyl) trifluorophosphate [Compound (n)] and 1,4-bis {4-[[4-((2-methoxy) phenylthio) phenyl (2-methoxy) phenyl] sulfonio] -2- (methoxy) phenylthio} benzene bis [tris ( Preparation of a mixture of (pentafluoroethyl) trifluorophosphate] [compound (o)]
Figure JPOXMLDOC01-appb-C000026
 
Figure JPOXMLDOC01-appb-C000026
 
Figure JPOXMLDOC01-appb-C000027
 
Figure JPOXMLDOC01-appb-C000027
 
 製造例1で製造した[4-(フェニルチオ)フェニル]フェニルスルフィドを39%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを61%含む混合物4.6部を,製造例6で製造した〔4-[(2-メトキシ)フェニルチオ]フェニル〕(2-メトキシフェニル)スルフィドを42%と〔4-[(2-メトキシ)フェニルチオ]フェニル〕(2-メトキシフェニル)スルホキシドを58%を含む混合物5.8部に変更した以外,実施例1と同様にして,(2-メトキシ)フェニル〔4-[4-(2-メトキシ)フェニルチオ]フェニルチオ〕フェニル[4-(2-メトキシ)フェニルチオ]フェニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェート〔化合物(n)〕と1,4-ビス{4-〔[4-((2-メトキシ)フェニルチオ)フェニル(2-メトキシ)フェニル]スルホニオ〕-2-(メトキシ)フェニルチオ}ベンゼン ビス[トリス(ペンタフルオロエチル)トリフルオロホスフェート]〔化合物(o)〕の混合物〔化合物(n)と化合物(o)のモル比率はそれぞれ,70モル%,30モル%であった〕を8.3部得た。
 生成物はH-NMR,赤外吸光分光分析(IR),LC-MSにて同定した。{H-NMR:d6-ジメチルスルホキシド;δ(ppm)7.6~8.0(m),7.3~7.6(m),3.6~3.75(m)。IR(KBr錠剤法):C-F結合特性吸収;1200cm-1付近。LC-MS:化合物(n)の分子イオンピーク;710,化合物(o)の分子イオンピーク;531}。また,混合物の比率(モル%)はHPLC分析によるピーク面積比より算出した。
4.6 parts of a mixture containing 39% of [4- (phenylthio) phenyl] phenylsulfide prepared in Preparation Example 1 and 61% of [4- (phenylthio) phenyl] phenylsulfoxide was prepared in Preparation Example 6 [4- A mixture of 42% [(2-methoxy) phenylthio] phenyl] (2-methoxyphenyl) sulfide and 58% [4-[(2-methoxy) phenylthio] phenyl] (2-methoxyphenyl) sulfoxide 5.8 (2-methoxy) phenyl [4- [4- (2-methoxy) phenylthio] phenylthio] phenyl [4- (2-methoxy) phenylthio] phenylsulfonium tris (Example 1) Pentafluoroethyl) trifluorophosphate [compound (n)] and 1,4-bis {4-[[4-(( -Methoxy) phenylthio) phenyl (2-methoxy) phenyl] sulfonio] -2- (methoxy) phenylthio} benzene mixture of bis [tris (pentafluoroethyl) trifluorophosphate] [compound (o)] [compound (n) and The molar ratios of the compound (o) were 70 mol% and 30 mol%, respectively.] 8.3 parts were obtained.
The product was identified by 1 H-NMR, infrared absorption spectroscopy (IR), and LC-MS. { 1 H-NMR: d6-dimethyl sulfoxide; δ (ppm) 7.6 to 8.0 (m), 7.3 to 7.6 (m), 3.6 to 3.75 (m). IR (KBr tablet method): CF bond characteristic absorption; around 1200 cm −1 . LC-MS: molecular ion peak of compound (n); 710, molecular ion peak of compound (o); 531}. The ratio (mol%) of the mixture was calculated from the peak area ratio by HPLC analysis.
〔実施例14〕
 (2-メトキシ)フェニル{〔4-[4-(2-メトキシ)フェニルチオ]フェニルチオ〕-3-メトキシ-フェニル}[4-(2-メトキシ)フェニルチオ]フェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレート〔化合物(p)〕と1,4-ビス{4-〔[4-((2-メトキシ)フェニルチオ)フェニル(2-メトキシ)フェニル]スルホニオ〕-2-(メトキシ)フェニルチオ}ベンゼン ビス[テトラキス(ペンタフルオロフェニル)ボレート]〔化合物(q)〕の混合物の合成
Example 14
(2-methoxy) phenyl {[4- [4- (2-methoxy) phenylthio] phenylthio] -3-methoxy-phenyl} [4- (2-methoxy) phenylthio] phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (P)] and 1,4-bis {4-[[4-((2-methoxy) phenylthio) phenyl (2-methoxy) phenyl] sulfonio] -2- (methoxy) phenylthio} benzene bis [tetrakis (pentafluoro Synthesis of a mixture of [phenyl] borate] [compound (q)]
   
Figure JPOXMLDOC01-appb-C000029
 
Figure JPOXMLDOC01-appb-C000029
 
 製造例1で製造した[4-(フェニルチオ)フェニル]フェニルスルフィドを39%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを61%含む混合物4.6部を,製造例6で製造した〔4-[(2-メトキシ)フェニルチオ]フェニル〕(2-メトキシフェニル)スルフィドを42%と〔4-[(2-メトキシ)フェニルチオ]フェニル〕(2-メトキシフェニル)スルホキシドを58%を含む混合物5.8部に変更し,且つ「10%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液52.7部」を「10%テトラキス(ペンタフルオロフェニル)ホウ酸リチウム水溶液74.6部」に変更した以外,実施例1と同様にして,(2-メトキシ)フェニル〔4-[4-(2-メトキシ)フェニルチオ]フェニルチオ〕フェニル[4-(2-メトキシ)フェニルチオ]フェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレート〔化合物(p)〕と1,4-ビス{4-〔[4-((2-メトキシ)フェニルチオ)フェニル(2-メトキシ)フェニル]スルホニオ〕-2-(メトキシ)フェニルチオ}ベンゼン ビス[テトラキス(ペンタフルオロフェニル)ボレート]〔化合物(q)〕の混合物〔化合物(p)と化合物(q)のモル比率はそれぞれ,70モル%,30モル%であった〕を10.0部得た。
 生成物はH-NMR,赤外吸光分光分析(IR),LC-MSにて同定した。{H-NMR:d6-ジメチルスルホキシド;δ(ppm)7.6~8.0(m),7.3~7.6(m),3.6~3.75(m)。IR(KBr錠剤法):B-C結合特性吸収;980cm-1付近。LC-MS:化合物(p)の分子イオンピーク;710,化合物(q)の分子イオンピーク;531}。また,混合物の比率(モル%)はHPLC分析によるピーク面積比より算出した。
4.6 parts of a mixture containing 39% of [4- (phenylthio) phenyl] phenyl sulfide prepared in Preparation Example 1 and 61% of [4- (phenylthio) phenyl] phenyl sulfoxide was prepared in Preparation Example 6 [4- A mixture of 42% [(2-methoxy) phenylthio] phenyl] (2-methoxyphenyl) sulfide and 58% [4-[(2-methoxy) phenylthio] phenyl] (2-methoxyphenyl) sulfoxide 5.8 Except that “10% tris (pentafluoroethyl) potassium trifluorophosphate aqueous solution 52.7 parts” was changed to “10% tetrakis (pentafluorophenyl) lithium borate aqueous solution 74.6 parts”. In the same manner as in Example 1, (2-methoxy) phenyl [4- [4- (2-methoxy) phenylthio] phenyl Thio] phenyl [4- (2-methoxy) phenylthio] phenylsulfonium tetrakis (pentafluorophenyl) borate [compound (p)] and 1,4-bis {4-[[4-((2-methoxy) phenylthio) phenyl (2-Methoxy) phenyl] sulfonio] -2- (methoxy) phenylthio} benzene A mixture of bis [tetrakis (pentafluorophenyl) borate] [compound (q)] [molar ratio of compound (p) to compound (q) is Were 70 mol% and 30 mol%, respectively].
The product was identified by 1 H-NMR, infrared absorption spectroscopy (IR), and LC-MS. { 1 H-NMR: d6-dimethyl sulfoxide; δ (ppm) 7.6 to 8.0 (m), 7.3 to 7.6 (m), 3.6 to 3.75 (m). IR (KBr tablet method): BC bond characteristic absorption; near 980 cm −1 . LC-MS: molecular ion peak of compound (p); 710, molecular ion peak of compound (q); 531}. The ratio (mol%) of the mixture was calculated from the peak area ratio by HPLC analysis.
〔実施例15〕
 フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム トリス(トリフルオロメタンスルホニル)メチド〔化合物(u)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[トリス(トリフルオロメタンスルホニル)メチド]〔化合物(v)〕の混合物の製造
 「10%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液52.7部」を「10%トリス(トリフルオロメタンスルホニル)メチドリチウム水溶液45.5部」に変更したこと以外,実施例3と同様にして,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム トリス(トリフルオロメタンスルホニル)メチド〔化合物(u)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[トリス(トリフルオロメタンスルホニル)メチド]〔化合物(v)〕の混合物〔化合物(u)と化合物(v)のモル比率はそれぞれ,70モル%,30モル%であった〕を7.2部得た。
生成物はH-NMR,赤外吸光分光分析(IR),LC-MSにて同定した。{H-NMR:d6-ジメチルスルホキシド;δ(ppm)7.6~8.0(m),7.3~7.6(m)。IR(KBr錠剤法:C-F結合特性吸収;1200cm-1付近。LC-MS:化合物(a)の分子イオンピーク;588,化合物(b)の分子イオンピーク;441)。また,混合物の比率(モル%)はHPLC分析によるピーク面積比より算出した。
Example 15
Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tris (trifluoromethanesulfonyl) methide [compound (u)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl ] Sulphonio] phenylthio} benzene Preparation of a mixture of bis [tris (trifluoromethanesulfonyl) methide] [compound (v)] "52.7 parts of 10% aqueous tris (pentafluoroethyl) potassium trifluorophosphate" was replaced with "10% Tris In the same manner as in Example 3, except for changing to “(trifluoromethanesulfonyl) methide lithium aqueous solution 45.5 parts”, phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium tris (trifluoromethanesulfone) ) Methide [compound (u)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl] sulfonio] phenylthio} benzene bis [tris (trifluoromethanesulfonyl) methide] [compound (v)] 7.2 parts of a mixture (molar ratios of the compound (u) and the compound (v) were 70 mol% and 30 mol%, respectively) were obtained.
The product was identified by 1 H-NMR, infrared absorption spectroscopy (IR), and LC-MS. { 1 H-NMR: d6-dimethyl sulfoxide; δ (ppm) 7.6 to 8.0 (m), 7.3 to 7.6 (m). IR (KBr tablet method: CF bond characteristic absorption; around 1200 cm −1. LC-MS: molecular ion peak of compound (a); 588, molecular ion peak of compound (b); 441). The ratio (mol%) of the mixture was calculated from the peak area ratio by HPLC analysis.
〔実施例16〕
 フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム ビス(トリフルオロメタンスルホニル)イミド〔化合物(w)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[ビス(トリフルオロメタンスルホニル)イミド]〔化合物(x)〕の混合物の製造
 「10%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液52.7部」を「10%ビス(トリフルオロメタンスルホニル)イミドリチウム水溶液31.2部」に変更したこと以外,実施例3と同様にして,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム ビス(トリフルオロメタンスルホニル)イミド〔化合物(w)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス[ビス(トリフルオロメタンスルホニル)イミド]〔化合物(x)〕の混合物〔化合物(w)と化合物(x)のモル比率はそれぞれ,70モル%,30モル%であった〕を5.9部得た。
生成物はH-NMR,赤外吸光分光分析(IR),LC-MSにて同定した。{H-NMR:d6-ジメチルスルホキシド;δ(ppm)7.6~8.0(m),7.3~7.6(m)。IR(KBr錠剤法:C-F結合特性吸収;1200cm-1付近。LC-MS:化合物(a)の分子イオンピーク;588,化合物(b)の分子イオンピーク;441)。また,混合物の比率(モル%)はHPLC分析によるピーク面積比より算出した。
Example 16
Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium bis (trifluoromethanesulfonyl) imide [compound (w)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl ] Sulphonio] phenylthio} benzene Preparation of a mixture of bis [bis (trifluoromethanesulfonyl) imide] [compound (x)] “52.7 parts of a 10% aqueous solution of potassium tris (pentafluoroethyl) trifluorophosphate” (Triphenylmethane) phenylsulfonium bis (trifluoromethane) in the same manner as in Example 3 except that it was changed to “31.2 parts of (trifluoromethanesulfonyl) imidolithium aqueous solution”. Sulfonyl) [Compound (w)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl] sulfonio] phenylthio} benzene bis [bis (trifluoromethanesulfonyl) imide] [compound (x)] 5.9 parts of compound (w) and compound (x) were 70 mol% and 30 mol%, respectively.
The product was identified by 1 H-NMR, infrared absorption spectroscopy (IR), and LC-MS. { 1 H-NMR: d6-dimethyl sulfoxide; δ (ppm) 7.6 to 8.0 (m), 7.3 to 7.6 (m). IR (KBr tablet method: CF bond characteristic absorption; around 1200 cm −1. LC-MS: molecular ion peak of compound (a); 588, molecular ion peak of compound (b); 441). The ratio (mol%) of the mixture was calculated from the peak area ratio by HPLC analysis.
 〔実施例17〕
 フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム ノナフルオロブタンスルホネート〔化合物(y)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス(ノナフルオロブタンスルホネート)〔化合物(z)〕の混合物の製造
製造例3で製造した混合物〔[4-(フェニルチオ)フェニル]フェニルスルフィドを42%と[4-(フェニルチオ)フェニル]フェニルスルホキシドを58%含む混合物〕4.9部,無水酢酸2.8部及びアセトニトリル16.5部を仕込み,均一に混合後,ノナフルオロブタンスルホン酸3.3部を室温で滴下した。その後の操作は実施例1と同様に行い,フェニル[4-(4-フェニルチオ)フェニルチオ]フェニル(4-フェニルチオ)フェニルスルホニウム ノナフレート(ノナフレート=ノナフルオロブタンスルホン酸アニオン)〔化合物(y)〕と1,4-ビス{4-〔[4-(フェニルチオ)フェニルフェニル]スルホニオ〕フェニルチオ}ベンゼン ビス(ノナフラート)〔化合物(z)〕の混合物〔化合物(y)と化合物(z)のモル比率はそれぞれ,70モル%,30モル%であった〕を6.3部得た。
 生成物はH-NMR,赤外吸光分光分析(IR),LC-MSにて同定した。{H-NMR:d6-ジメチルスルホキシド;δ(ppm)7.6~8.0(m),7.3~7.6(m)。IR(KBr錠剤法:C-F結合特性吸収;1200cm-1付近。LC-MS:化合物(a)の分子イオンピーク;588,化合物(b)の分子イオンピーク;441)。また,混合物の比率(モル%)はHPLC分析によるピーク面積比より算出した。
Example 17
Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium nonafluorobutanesulfonate [compound (y)] and 1,4-bis {4-[[4- (phenylthio) phenylphenyl] sulfonio] Preparation of a mixture of phenylthio} benzene bis (nonafluorobutanesulfonate) [compound (z)] Mixture prepared in Preparation Example 3 [42% of [4- (phenylthio) phenyl] phenyl sulfide and [4- (phenylthio) phenyl] A mixture containing 58% of phenyl sulfoxide] 4.9 parts, 2.8 parts of acetic anhydride and 16.5 parts of acetonitrile were added and mixed uniformly, and 3.3 parts of nonafluorobutanesulfonic acid was added dropwise at room temperature. Subsequent operations were carried out in the same manner as in Example 1. Phenyl [4- (4-phenylthio) phenylthio] phenyl (4-phenylthio) phenylsulfonium nonaflate (nonaflate = nonafluorobutanesulfonate anion) [compound (y)] and 1 , 4-bis {4-[[4- (phenylthio) phenylphenyl] sulfonio] phenylthio} benzene mixture of bis (nonaflate) [compound (z)] [molar ratio of compound (y) and compound (z) is 6.3 parts were obtained.
The product was identified by 1 H-NMR, infrared absorption spectroscopy (IR), and LC-MS. { 1 H-NMR: d6-dimethyl sulfoxide; δ (ppm) 7.6 to 8.0 (m), 7.3 to 7.6 (m). IR (KBr tablet method: CF bond characteristic absorption; around 1200 cm −1. LC-MS: molecular ion peak of compound (a); 588, molecular ion peak of compound (b); 441). The ratio (mol%) of the mixture was calculated from the peak area ratio by HPLC analysis.
〔比較例1〕
 CPI-110P〔4-(フェニルチオ)フェニルジフェニルスルホニウム ヘキサフルオロホスフェート,サンアプロ株式会社製〕を比較用のスルホニウム塩とした。
[Comparative Example 1]
CPI-110P [4- (phenylthio) phenyldiphenylsulfonium hexafluorophosphate, manufactured by San Apro Co., Ltd.] was used as a comparative sulfonium salt.
〔比較例2〕
 CPI-110A〔4-(フェニルチオ)フェニルジフェニルスルホニウム ヘキサフルオロアンチモネート,サンアプロ株式会社製〕を比較用のスルホニウム塩とした。
[Comparative Example 2]
CPI-110A [4- (phenylthio) phenyldiphenylsulfonium hexafluoroantimonate, manufactured by San Apro Co., Ltd.] was used as a comparative sulfonium salt.
〔比較例3〕
 4-(フェニルチオ)フェニルジフェニルスルホニウムトリス(ペンタフルオロエチル)トリフルオロホスフェート(化合物(r))の合成
[Comparative Example 3]
Synthesis of 4- (phenylthio) phenyldiphenylsulfonium tris (pentafluoroethyl) trifluorophosphate (compound (r))
Figure JPOXMLDOC01-appb-C000030
 
Figure JPOXMLDOC01-appb-C000030
 
 ジフェニルスルホキシド12.1部,ジフェニルスルフィド9.3部及びメタンスルホン酸43.0部を撹拌しながら,これに無水酢酸7.9部を滴下し,40~50℃で5時間反応させた後,室温(約25℃)まで冷却し,この反応溶液を20%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液121部中に投入し,室温(約25℃)で1時間撹拌して,黄色のやや粘調な油状物が析出した。この油状物を酢酸エチルにて抽出し,有機層を水で数回洗浄した後,有機層から溶剤を留去し,得られた残渣にトルエンを加えて溶解した後,ヘキサンを加え,10℃で1時間よく撹拌した後静置した。1時間後,溶液は2層に分離したため,上層を分液によって除いた。残った下層にヘキサンを加え,室温(約25℃)でよく混合すると淡黄色の結晶が析出した。これをろ別し,減圧乾燥して,4-(フェニルチオ)フェニルジフェニルスルホニウムトリス(ペンタフルオロエチル)トリフルオロホスフェートを収率60%で得た。生成物はH-NMRにて同定した{d6-ジメチルスルホキシド,δ(ppm)7.72~7.87(12H,m),7.54~7.63(5H,m),7.42(2H,d)}。また,赤外吸光分光分析(KBr錠剤法)により,1200cm-1付近にC-F結合の吸収を確認した。 While stirring 12.1 parts of diphenyl sulfoxide, 9.3 parts of diphenyl sulfide and 43.0 parts of methanesulfonic acid, 7.9 parts of acetic anhydride was added dropwise thereto and reacted at 40 to 50 ° C. for 5 hours. After cooling to room temperature (about 25 ° C.), the reaction solution was put into 121 parts of 20% aqueous potassium tris (pentafluoroethyl) trifluorophosphate and stirred at room temperature (about 25 ° C.) for 1 hour. A viscous oil precipitated. This oily substance was extracted with ethyl acetate, the organic layer was washed several times with water, the solvent was distilled off from the organic layer, and toluene was added to the resulting residue to dissolve it. The mixture was stirred well for 1 hour and allowed to stand. After 1 hour, since the solution was separated into two layers, the upper layer was removed by liquid separation. When hexane was added to the remaining lower layer and mixed well at room temperature (about 25 ° C.), pale yellow crystals were precipitated. This was filtered off and dried under reduced pressure to obtain 4- (phenylthio) phenyldiphenylsulfonium tris (pentafluoroethyl) trifluorophosphate in a yield of 60%. The product was identified by 1 H-NMR {d6-dimethylsulfoxide, δ (ppm) 7.72-7.87 (12H, m), 7.54-7.63 (5H, m), 7.42. (2H, d)}. In addition, absorption of C—F bond was confirmed in the vicinity of 1200 cm −1 by infrared absorption spectroscopic analysis (KBr tablet method).
〔比較例4〕
 4-(フェニルチオ)フェニルジフェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレート(化合物(s))の合成
[Comparative Example 4]
Synthesis of 4- (phenylthio) phenyldiphenylsulfonium tetrakis (pentafluorophenyl) borate (compound (s))
Figure JPOXMLDOC01-appb-C000031
 
Figure JPOXMLDOC01-appb-C000031
 
 「20%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液121部」を「10%テトラキス(ペンタフルオロフェニル)ホウ酸リチウム342.9部」に変更したこと以外,比較例3と同様にして,4-(フェニルチオ)フェニルジフェニルスルホニウム テトラキス(ペンタフルオロフェニル)ボレートを収率60%で得た。生成物はH-NMRにて同定した{d6-ジメチルスルホキシド,δ(ppm)7.72~7.87(12H,m),7.54~7.63(5H,m),7.42(2H,d)}。また,赤外吸光分光分析(KBr錠剤法)により,980cm-1付近にB-C結合の吸収を確認した。 4 except that “20% tris (pentafluoroethyl) potassium trifluorophosphate aqueous solution 121 parts” was changed to “10% lithium tetrakis (pentafluorophenyl) lithium borate 342.9 parts”. -(Phenylthio) phenyldiphenylsulfonium tetrakis (pentafluorophenyl) borate was obtained in a yield of 60%. The product was identified by 1 H-NMR {d6-dimethylsulfoxide, δ (ppm) 7.72-7.87 (12H, m), 7.54-7.63 (5H, m), 7.42. (2H, d)}. Further, absorption of BC bond was confirmed in the vicinity of 980 cm −1 by infrared absorption spectroscopic analysis (KBr tablet method).
〔比較例5〕
 ジフェニル-2-チオキサントニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェート(化合物(t))の合成
[Comparative Example 5]
Synthesis of diphenyl-2-thioxanthonylsulfonium tris (pentafluoroethyl) trifluorophosphate (compound (t))
Figure JPOXMLDOC01-appb-C000032
 
Figure JPOXMLDOC01-appb-C000032
 
 製造例7で合成した2-(フェニルチオ)チオキサントン15.0部,ジフェニルヨードニウムヘキサフルオロホスフェート41.9部,安息香酸銅(II)0.4部及びクロロベンゼン300部を均一混合し,120~125℃で3時間反応させた後,反応溶液を室温(約25℃)まで冷却し,蒸留水300部中に投入し,生成物を析出させた。これをろ過し,残渣を水で濾液のpHが中性になるまで洗浄し,残渣を減圧乾燥した後,ジエチルエーテル100部を加えて超音波洗浄器でジエチルエーテル中に分散し約15分間静置してから上澄みを除く操作を3回繰り返して,生成した固体を洗浄した。ついで,固体をロータリーエバポレーターに移して,溶媒を留去することにより,黄色固体を得た。この黄色固体をジクロロメタン770部に溶かし,10%トリス(ペンタフルオロエチル)トリフルオロリン酸カリウム水溶液342部中に投入した後,室温(約25℃)で2時間撹拌し,有機層を水で数回洗浄し,減圧乾燥することにより,ジフェニル-2-チオキサントニルスルホニウム トリス(ペンタフルオロエチル)トリフルオロホスフェートを収率98%,純度85%で得た。生成物はH-NMRにて同定した{d6-ジメチルスルホキシド,δ(ppm)8.72(1H,s),8.47(1H,d),8.30(1H,d),8.13(2H,d),7.78~7.98(11H,m),7.70(1H,t)}。純度はHPLCにより定量した。また,赤外吸光分析(KBr錠剤法)により,1200cm-1付近にC-F結合の吸収を確認した。 15.0 parts of 2- (phenylthio) thioxanthone synthesized in Production Example 7, 41.9 parts of diphenyliodonium hexafluorophosphate, 0.4 part of copper (II) benzoate and 300 parts of chlorobenzene were uniformly mixed at 120 to 125 ° C. Then, the reaction solution was cooled to room temperature (about 25 ° C.) and poured into 300 parts of distilled water to precipitate the product. This was filtered, the residue was washed with water until the pH of the filtrate became neutral, the residue was dried under reduced pressure, 100 parts of diethyl ether was added, and the mixture was dispersed in diethyl ether with an ultrasonic cleaner and allowed to stand for about 15 minutes. Then, the operation of removing the supernatant was repeated 3 times to wash the produced solid. The solid was then transferred to a rotary evaporator and the solvent was distilled off to obtain a yellow solid. This yellow solid was dissolved in 770 parts of dichloromethane and charged into 342 parts of a 10% aqueous solution of potassium tris (pentafluoroethyl) trifluorophosphate, followed by stirring at room temperature (about 25 ° C.) for 2 hours and the organic layer several times with water. By washing and drying under reduced pressure, diphenyl-2-thioxanthonylsulfonium tris (pentafluoroethyl) trifluorophosphate was obtained with a yield of 98% and a purity of 85%. The product was identified by 1 H-NMR {d6-dimethylsulfoxide, δ (ppm) 8.72 (1H, s), 8.47 (1H, d), 8.30 (1H, d), 8. 13 (2H, d), 7.78-7.98 (11 H, m), 7.70 (1 H, t)}. Purity was quantified by HPLC. Further, absorption of C—F bond was confirmed in the vicinity of 1200 cm −1 by infrared absorption analysis (KBr tablet method).
<エネルギー線硬化性組成物の評価>
 1.硬化性組成物の調製
 評価試料{実施例1~15,比較例1~5のスルホニウム塩}と,エポキシド(3,4-エポキシシクロヘキシルメチル-3,4-エポキシシクロヘキサンカルボキシレート,ダウケミカル株式会社製,UVR-6110)とを表1に示した配合量(重量部)で60℃にて加熱し,均一混合して,光硬化性試験用の組成物を調製した。
<Evaluation of energy beam curable composition>
1. Preparation of curable composition Evaluation sample {sulfonium salt of Examples 1 to 15 and Comparative Examples 1 to 5} and epoxide (3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, manufactured by Dow Chemical Co., Ltd. , UVR-6110) at 60 ° C. in the blending amounts (parts by weight) shown in Table 1, and uniformly mixed to prepare a composition for a photocuring test.
 なお,実施例10および比較例1で得たスルホニウム塩は,ヘキサフルオロリン酸塩であり,実施例1~9,11~15および比較例2~5で得たトリス(ペンタフルオロエチル)トリフルオロリン酸塩,ヘキサフルオロアンチモン酸塩,テトラキス(ペンタフルオロフェニル)ホウ酸塩及びトリス(トリフルオロメタンスルホニル)メチド塩よりも,発生する酸の強度が弱く,カチオン重合に対する活性が低いため,スルホニウム塩の配合量を多くした。 The sulfonium salt obtained in Example 10 and Comparative Example 1 is hexafluorophosphate, and tris (pentafluoroethyl) trifluorophosphoric acid obtained in Examples 1 to 9, 11 to 15 and Comparative Examples 2 to 5 was used. Incorporation of sulfonium salt due to weaker acid strength and lower activity against cationic polymerization than acid salt, hexafluoroantimonate, tetrakis (pentafluorophenyl) borate and tris (trifluoromethanesulfonyl) methide salt Increased the amount.
Figure JPOXMLDOC01-appb-T000033
 
Figure JPOXMLDOC01-appb-T000033
 
 2.光硬化性評価
 上記で得た硬化性組成物をアプリケーター(40μm)でポリエチレンテレフタレート(PET)フィルムに塗布した。PETフィルムに紫外線照射装置を用いて,フィルターによって波長を限定した紫外光を照射した。なお,フィルターは365フィルター(アイグラフィックス株式会社製,365nm未満の光をカットするフィルター)とL-34(株式会社ケンコー光学製,340nm未満の光をカットするフィルター)を併用した。照射後,40分後の塗膜硬度を鉛筆硬度(JIS K5600-5-4:1999)を測定し,以下の基準により評価し(硬化後の塗膜厚は約40μm),これらの結果を表2に示した。鉛筆硬度が高いほど,エネルギー線硬化性組成物の光硬化性が良好であること,すなわちスルホニウム塩のカチオン重合性化合物に対する重合開始能(スルホニウム塩の光感応性)が優れていることを示す。
2. Photocurability evaluation The curable composition obtained above was applied to a polyethylene terephthalate (PET) film with an applicator (40 μm). The PET film was irradiated with ultraviolet light having a wavelength limited by a filter using an ultraviolet irradiation device. The filter used was a 365 filter (manufactured by Eye Graphics Co., Ltd., a filter that cuts light of less than 365 nm) and L-34 (manufactured by Kenko Optical Co., Ltd., a filter that cuts light of less than 340 nm). After irradiation, the film hardness after 40 minutes was measured by pencil hardness (JIS K5600-5-4: 1999) and evaluated according to the following criteria (coating thickness after curing was about 40 μm). It was shown in 2. The higher the pencil hardness, the better the photocurability of the energy ray-curable composition, that is, the better the polymerization initiation ability of the sulfonium salt with respect to the cationically polymerizable compound (the photosensitivity of the sulfonium salt).
(評価基準)
 ◎:鉛筆硬度が2H以上
 ○:鉛筆硬度がH~B
 △:鉛筆硬度が2B~4B
 ×:液状~タックがあり,鉛筆硬度を測定できない
(Evaluation criteria)
◎: Pencil hardness is 2H or more ○: Pencil hardness is H to B
Δ: Pencil hardness is 2B-4B
×: There is liquid to tack, and pencil hardness cannot be measured
(紫外光の照射条件)
・紫外線照射装置:ベルトコンベア式UV照射装置(アイグラフィックス株式会社製)
・ランプ:1.5kW高圧水銀灯
・フィルター:365フィルター(アイグラフィックス株式会社製)
       L-34(株式会社ケンコー光学製)
・照度(365nmヘッド照度計で測定):145mW/cm
(Ultraviolet light irradiation conditions)
・ Ultraviolet irradiation device: Belt conveyor type UV irradiation device (manufactured by Eye Graphics Co., Ltd.)
・ Lamp: 1.5kW high pressure mercury lamp ・ Filter: 365 filter (manufactured by Eye Graphics Co., Ltd.)
L-34 (manufactured by Kenko Optical Co., Ltd.)
Illuminance (measured with a 365 nm head illuminometer): 145 mW / cm 2
・積算光量(365nmヘッド照度計で測定):
 条件-1:200mJ/cm
 条件-2:400mJ/cm
 条件-3:600mJ/cm
-Integrated light quantity (measured with 365nm head illuminometer):
Condition-1: 200 mJ / cm 2
Condition-2: 400 mJ / cm 2
Condition-3: 600 mJ / cm 2
 3.貯蔵安定性評価
(試料の調製)
 評価試料{実施例1~15,比較例1~5のスルホニウム塩}3部と,エポキシド(3,4-エポキシシクロヘキシルメチル-3,4-エポキシシクロヘキサンカルボキシレート,ダウケミカル株式会社製,UVR-6110)100部をそれぞれ配合し,60℃で混合後,均一混合して貯蔵安定性試験用試料を調製した。
 この配合試料を遮光下80℃で加熱して,1ヶ月保存した後,加熱前後の配合試料の粘度を測定し,下記基準により評価した。粘度の上昇がないものほど貯蔵安定性が良い。
(評価基準)
 ×:加熱後の粘度変化が1.5倍以上。
 ○:加熱後の粘度変化が1.5倍未満。
 これらの結果を表2に示した。
3. Storage stability evaluation (sample preparation)
3 parts of an evaluation sample {sulfonium salt of Examples 1 to 15 and Comparative Examples 1 to 5} and epoxide (3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, manufactured by Dow Chemical Co., Ltd., UVR-6110 ) 100 parts of each were blended, mixed at 60 ° C., and then mixed uniformly to prepare a storage stability test sample.
This blended sample was heated at 80 ° C. under light shielding and stored for 1 month, and then the viscosity of the blended sample before and after heating was measured and evaluated according to the following criteria. The storage stability is better as the viscosity does not increase.
(Evaluation criteria)
X: Viscosity change after heating is 1.5 times or more.
○: Viscosity change after heating is less than 1.5 times.
These results are shown in Table 2.
Figure JPOXMLDOC01-appb-T000034
Figure JPOXMLDOC01-appb-T000034
 表2の結果からわかるように,本発明のスルホニウム塩は比較用のスルホニウム塩に比べて365nm以上の紫外光でのカチオン重合性化合物の硬化性能(光感応性)が優れていることがわかった。また,式(2)で示されるスルホニウム塩の比率が多くなると,貯蔵安定性が悪くなることがわかった。 As can be seen from the results in Table 2, it was found that the sulfonium salt of the present invention was superior in curing performance (photosensitivity) of the cationically polymerizable compound under ultraviolet light of 365 nm or more as compared with the comparative sulfonium salt. . Moreover, it turned out that storage stability worsens, when the ratio of the sulfonium salt shown by Formula (2) increases.
 本発明のスルホニウム塩は,塗料,コーティング剤,各種被覆材料(ハードコート,耐汚染被覆材,防曇被覆材,耐触被覆材,光ファイバー等),粘着テープの背面処理剤,粘着ラベル用剥離シート(剥離紙,剥離プラスチックフィルム,剥離金属箔等)の剥離コーティング材,印刷板,歯科用材料(歯科用配合物,歯科用コンポジット等),インキ,インクジェットインキ,ポジ型レジスト(回路基板,CSP,MEMS素子等の電子部品製造の接続端子や配線パターン形成等に利用),レジストフィルム,液状レジスト,ネガ型レジスト(半導体素子等の表面保護膜,層間絶縁膜,平坦化膜等の永久膜形成等に利用),MEMS用レジスト,ポジ型感光性材料,ネガ型感光性材料,各種接着剤(各種電子部品用仮固定剤,HDD用接着剤,ピックアップレンズ用接着剤,FPD用機能性フィルム(偏向板,反射防止膜等)用接着剤等),ホログラフ用樹脂,FPD材料(カラーフィルター,ブラックマトリックス,隔壁材料,ホトスペーサー,リブ,液晶用配向膜等の形成とFPD用シール剤等に利用),光学部材,成形材料(建築材料用,光学部品,レンズ等),注型材料,パテ,ガラス繊維含浸剤,目止め材,シーリング材,封止材,光半導体(LED)封止材,光導波路材料,ナノインプリント材料,光造用,及びマイクロ光造形用材料等に用いられる光酸発生剤として好適に用いられる。 The sulfonium salt of the present invention comprises a coating material, a coating agent, various coating materials (hard coat, antifouling coating material, antifogging coating material, touchproof coating material, optical fiber, etc.), a back surface treatment agent for adhesive tape, and a release sheet for an adhesive label. Release coating materials (release paper, release plastic film, release metal foil, etc.), printing plates, dental materials (dental compounds, dental composites, etc.), inks, inkjet inks, positive resists (circuit boards, CSP, Used for connecting terminals and wiring patterns for manufacturing electronic components such as MEMS elements), resist films, liquid resists, negative resists (formation of permanent films such as surface protective films for semiconductor elements, interlayer insulating films, planarization films, etc.) ), MEMS resist, positive photosensitive material, negative photosensitive material, various adhesives (temporary fixing agent for various electronic parts, adhesion for HDD) , Pickup lens adhesive, FPD functional film (deflection plate, antireflection film, etc.), holographic resin, FPD material (color filter, black matrix, partition material, photospacer, rib, liquid crystal Used for forming alignment films and sealing agents for FPDs, etc.), optical members, molding materials (for building materials, optical components, lenses, etc.), casting materials, putty, glass fiber impregnating agents, sealing materials, sealing materials, It is suitably used as a photoacid generator for use in encapsulants, optical semiconductor (LED) encapsulants, optical waveguide materials, nanoimprint materials, photofabrication, and micro stereolithography materials.

Claims (9)

  1.  下記式(1)で示されるスルホニウム塩と(2)で示されるスルホニウム塩とを含んでなる光酸発生剤。
    Figure JPOXMLDOC01-appb-C000001
     
    Figure JPOXMLDOC01-appb-C000002
     
    〔式(1)及び(2)中,R~Rは,互いに独立して,アルキル基,ヒドロキシル基,アルコキシル基,アルキルカルボニル基,アリールカルボニル基,アルコキシカルボニル基,アリールオキシカルボニル基,アリールチオカルボニル基,アシロキシ基,アリールチオ基,アルキルチオ基,アリール基,複素環式炭化水素基,アリールオキシ基,アルキルスルフィニル基,アリールスルフィニル基,アルキルスルホニル基,アリールスルホニル基,ヒドロキシ(ポリ)アルキレンオキシ基,置換されていてよいアミノ基,シアノ基,ニトロ基又はハロゲン原子を表し,m~m,はそれぞれR~Rの個数を表し,m,m,m及びmは0~5の整数を,m,m,m,m及びmは0~4の整数を表し,AはSまたはSOを,Xは一価の多原子アニオンを表す。〕
    A photoacid generator comprising a sulfonium salt represented by the following formula (1) and a sulfonium salt represented by (2).
    Figure JPOXMLDOC01-appb-C000001

    Figure JPOXMLDOC01-appb-C000002

    [In the formulas (1) and (2), R 1 to R 9 are independently of each other an alkyl group, a hydroxyl group, an alkoxyl group, an alkylcarbonyl group, an arylcarbonyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an aryl. Ruthiocarbonyl group, acyloxy group, arylthio group, alkylthio group, aryl group, heterocyclic hydrocarbon group, aryloxy group, alkylsulfinyl group, arylsulfinyl group, alkylsulfonyl group, arylsulfonyl group, hydroxy (poly) alkyleneoxy group , Represents an optionally substituted amino group, cyano group, nitro group or halogen atom, m 1 to m 9 represent the number of R 1 to R 9 , and m 4 , m 6 , m 7 and m 9 represent an integer of 0 to 5, an integer of m 1, m 2, m 3 , m 5 and m 8 0-4 And, A 1 is S or SO, X - represents an monovalent polyatomic anion. ]
  2.  R~Rについて,該アルキル基が炭素数1~18の直鎖アルキル基,炭素数3~18の分枝鎖アルキル基,又は炭素数3~18のシクロアルキル基であり,該アルコキシル基が炭素数1~18の直鎖アルコキシル基又は炭素数3~18の分枝鎖アルコキシル基であり,該アルキルカルボニル基が炭素数2~18の直鎖アルキルカルボニル基又は炭素数4~18の分枝鎖アルキルカルボニル基であり,該アリールカルボニル基が炭素数7~11のアリールカルボニル基であり,該アルコキシカルボニル基が炭素数2~19の直鎖アルコキシカルボニル基又は炭素数4~19の分枝鎖アルコキシカルボニル基であり,該アリールオキシカルボニル基が炭素数7~11のアリールオキシカルボニル基であり,該アリールチオカルボニル基が炭素数7~11のアリールチオカルボニル基であり,該アシロキシ基が炭素数2~19の直鎖アシロキシ基又は炭素数4~19の分枝鎖アシロキシ基であり,該アリールチオ基が炭素数6~20のアリールチオ基であり,該アルキルチオ基が炭素数1~18の直鎖アルキルチオ基又は炭素数3~18の分枝鎖アルキルチオ基であり,該アリール基が炭素数6~10のアリール基であり,該複素環式炭化水素基が炭素数4~20の複素環式炭化水素基であり,該アリールオキシ基が炭素数6~10のアリールオキシ基であり,該アルキルスルフィニル基が炭素数1~18の直鎖アルキルスルフィニル基又は炭素数3~18の分枝鎖アルキルスルフィニル基であり,該アリールスルフィニル基が炭素数6~10のアリールスルフィニル基であり,該アルキルスルホニル基が炭素数1~18の直鎖アルキルスルホニル基又は炭素数3~18の分枝鎖アルキルスルホニル基であり,該アリールスルホニル基が炭素数6~10のアリールスルホニル基であり,該ヒドロキシ(ポリ)アルキレンオキシ基が式(3),
    Figure JPOXMLDOC01-appb-C000003
    〔AOはエチレンオキシ基及び/又はプロピレンオキシ基,qは1~5の整数を表す。〕で示されるヒドロキシ(ポリ)アルキレンオキシ基であり,該置換されていてよいアミノ基がアミノ基(-NH)又は炭素数1~15の,飽和炭化水素基又は芳香族基を含んでよい炭化水素基で置換された置換アミノ基であり,該ハロゲン原子基がフッ素原子,塩素原子,臭素原子又はヨウ素原子である,請求項1の光酸発生剤。
    For R 1 to R 9 , the alkyl group is a linear alkyl group having 1 to 18 carbon atoms, a branched alkyl group having 3 to 18 carbon atoms, or a cycloalkyl group having 3 to 18 carbon atoms, and the alkoxyl group Is a straight-chain alkoxyl group having 1 to 18 carbon atoms or a branched-chain alkoxyl group having 3 to 18 carbon atoms, and the alkylcarbonyl group is a straight-chain alkylcarbonyl group having 2 to 18 carbon atoms or a group having 4 to 18 carbon atoms. A branched alkylcarbonyl group, the arylcarbonyl group is an arylcarbonyl group having 7 to 11 carbon atoms, and the alkoxycarbonyl group is a linear alkoxycarbonyl group having 2 to 19 carbon atoms or a branched chain having 4 to 19 carbon atoms. A chain alkoxycarbonyl group, the aryloxycarbonyl group is an aryloxycarbonyl group having 7 to 11 carbon atoms, and the arylthiocarbonyl group is a carbon atom. An arylthiocarbonyl group having 7 to 11 carbon atoms, wherein the acyloxy group is a linear acyloxy group having 2 to 19 carbon atoms or a branched chain acyloxy group having 4 to 19 carbon atoms, and the arylthio group has 6 to 20 carbon atoms The alkylthio group is a linear alkylthio group having 1 to 18 carbon atoms or a branched alkylthio group having 3 to 18 carbon atoms, and the aryl group is an aryl group having 6 to 10 carbon atoms, The heterocyclic hydrocarbon group is a heterocyclic hydrocarbon group having 4 to 20 carbon atoms, the aryloxy group is an aryloxy group having 6 to 10 carbon atoms, and the alkylsulfinyl group is 1 to 18 carbon atoms. A straight-chain alkylsulfinyl group or a branched alkylsulfinyl group having 3 to 18 carbon atoms, and the arylsulfinyl group is an arylsulfinyl group having 6 to 10 carbon atoms, The alkylsulfonyl group is a straight-chain alkylsulfonyl group having 1 to 18 carbon atoms or a branched alkylsulfonyl group having 3 to 18 carbon atoms, and the arylsulfonyl group is an arylsulfonyl group having 6 to 10 carbon atoms; The (poly) alkyleneoxy group has the formula (3),
    Figure JPOXMLDOC01-appb-C000003
    [AO represents an ethyleneoxy group and / or propyleneoxy group, and q represents an integer of 1 to 5. And the optionally substituted amino group may include an amino group (—NH 2 ) or a saturated hydrocarbon group or aromatic group having 1 to 15 carbon atoms. The photoacid generator according to claim 1, which is a substituted amino group substituted with a hydrocarbon group, and the halogen atom group is a fluorine atom, a chlorine atom, a bromine atom or an iodine atom.
  3.  R~Rが,互いに独立して,メチル基,メトキシ基またはアセチル基よりなる群から選ばれる1種を表すものである,請求項1又は2に記載の光酸発生剤。 The photoacid generator according to claim 1 or 2, wherein R 1 to R 9 independently represent one selected from the group consisting of a methyl group, a methoxy group, and an acetyl group.
  4.  m~mが何れも0である,請求項1ないし3の何れかに記載の光酸発生剤。 4. The photoacid generator according to claim 1, wherein m 1 to m 9 are all 0.
  5.  Xが,MY ,(Rf)PF6-b ,R10 BY4-c ,R10 GaY4-c ,R11SO ,(R11SO又は(R11SOで表されるアニオン〔ここに,Mはリン原子,ホウ素原子,ヒ素原子又はアンチモン原子,Yはハロゲン原子,Rfは水素原子の80モル%以上がフッ素原子で置換されたアルキル基,Pはリン原子,Fはフッ素原子,R10は,少なくとも1個の水素原子がハロゲン原子,トリフルオロメチル基,ニトロ基又はシアノ基で置換されたフェニル基,Bはホウ素原子,Gaはガリウム原子,R11は炭素数1~20のアルキル基,炭素数1~20のパーフルオロアルキル基又は炭素数6~20のアリール基,aは4~6の整数,bは1~5の整数,cは1~4の整数を表す。〕である,請求項1ないし4の何れかに記載の光酸発生剤。 X represents MY a , (Rf) b PF 6-b , R 10 c BY 4-c , R 10 c GaY 4-c , R 11 SO 3 , (R 11 SO 2 ) 3 C An anion represented by or (R 11 SO 2 ) 2 N , wherein M is a phosphorus atom, boron atom, arsenic atom or antimony atom, Y is a halogen atom, Rf is 80 mol% or more of hydrogen atoms is fluorine An alkyl group substituted with an atom, P is a phosphorus atom, F is a fluorine atom, R 10 is a phenyl group in which at least one hydrogen atom is substituted with a halogen atom, a trifluoromethyl group, a nitro group or a cyano group, B Is a boron atom, Ga is a gallium atom, R 11 is an alkyl group having 1 to 20 carbon atoms, a perfluoroalkyl group having 1 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms, a is an integer of 4 to 6, b Is 1-5 , C is an integer of 1-4. The photoacid generator according to any one of claims 1 to 4, wherein
  6.  Xが,PF ,SbF ,(CFCFPF ,(C,((CF,(CGa,((CFGa又は(CFSOで表されるアニオンである,請求項1ないし5の何れかに記載の光酸発生剤。 X represents PF 6 , SbF 6 , (CF 3 CF 2 ) 3 PF 3 , (C 6 F 5 ) 4 B , ((CF 3 ) 2 C 6 H 3 ) 4 B , (C 6. The anion represented by 6 F 5 ) 4 Ga , ((CF 3 ) 2 C 6 H 3 ) 4 Ga or (CF 3 SO 2 ) 3 C —. Photoacid generator.
  7.  該光酸発生剤に含まれる式(1)で示されるスルホニウム塩と(2)で示されるスルホニウム塩の合計量のうち,式(1)で示されるスルホニウム塩の割合が少なくとも50モル%であることを特徴とする,請求項1ないし6の何れかに記載の光酸発生剤。 Of the total amount of the sulfonium salt represented by formula (1) and the sulfonium salt represented by (2) contained in the photoacid generator, the proportion of the sulfonium salt represented by formula (1) is at least 50 mol%. The photoacid generator according to any one of claims 1 to 6, wherein
  8.  請求項1ないし7に記載の光酸発生剤とカチオン重合性化合物とを含有することを特徴とするエネルギー線硬化性組成物。 An energy ray-curable composition comprising the photoacid generator according to claim 1 and a cationically polymerizable compound.
  9.  請求項8に記載のエネルギー線硬化性組成物を硬化させて得られることを特徴とする硬化体。 A cured product obtained by curing the energy beam curable composition according to claim 8.
PCT/JP2010/063035 2009-08-03 2010-08-02 Photoacid generator, photocurable composition and cured product of same WO2011016425A1 (en)

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JP2011063796A (en) * 2009-08-20 2011-03-31 San Apro Kk Photo-acid generator, photo-curable composition, and positive type photoresist composition
JP2011102269A (en) * 2009-11-11 2011-05-26 San Apro Kk Sulfonium salt, photo acid-generating agent, curable composition and positive photoresist composition
JP2017125007A (en) * 2015-12-31 2017-07-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC Photoacid generator
JP2018127641A (en) * 2013-10-25 2018-08-16 Jsr株式会社 Coloring composition, colored cured film and display element
WO2021186846A1 (en) * 2020-03-17 2021-09-23 サンアプロ株式会社 Sulfonium salt, photoacid generator, curable composition, and resist composition
WO2022030139A1 (en) * 2020-08-05 2022-02-10 サンアプロ株式会社 Photoacid generator
CN114502613A (en) * 2019-10-02 2022-05-13 东京应化工业株式会社 Curable composition, cured product, and method for forming cured product
US11550217B2 (en) 2015-12-31 2023-01-10 Rohm And Haas Electronic Materials Llc Photoresist composition, coated substrate including the photoresist composition, and method of forming electronic device
CN114901638B (en) * 2020-03-17 2024-10-29 三亚普罗股份有限公司 Sulfonium salt, photoacid generator, curable composition, and resist composition

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JP2010254654A (en) * 2009-04-28 2010-11-11 San Apro Kk Sulfonium salt, photoacid generator, photo-curing composition and cured material therefrom

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Cited By (13)

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Publication number Priority date Publication date Assignee Title
JP2011063796A (en) * 2009-08-20 2011-03-31 San Apro Kk Photo-acid generator, photo-curable composition, and positive type photoresist composition
JP2011102269A (en) * 2009-11-11 2011-05-26 San Apro Kk Sulfonium salt, photo acid-generating agent, curable composition and positive photoresist composition
JP2018127641A (en) * 2013-10-25 2018-08-16 Jsr株式会社 Coloring composition, colored cured film and display element
US11550217B2 (en) 2015-12-31 2023-01-10 Rohm And Haas Electronic Materials Llc Photoresist composition, coated substrate including the photoresist composition, and method of forming electronic device
JP2017125007A (en) * 2015-12-31 2017-07-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC Photoacid generator
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US10509315B2 (en) 2015-12-31 2019-12-17 Rohm And Haas Electronic Materials, Llc Photoacid generator
US11960206B2 (en) 2015-12-31 2024-04-16 Rohm and Hass Electronic Materials LLC Photoresist composition, coated substrate including the photoresist composition, and method of forming electronic device
CN114502613A (en) * 2019-10-02 2022-05-13 东京应化工业株式会社 Curable composition, cured product, and method for forming cured product
WO2021186846A1 (en) * 2020-03-17 2021-09-23 サンアプロ株式会社 Sulfonium salt, photoacid generator, curable composition, and resist composition
CN114901638A (en) * 2020-03-17 2022-08-12 三亚普罗股份有限公司 Sulfonium salt, photoacid generator, curable composition, and resist composition
CN114901638B (en) * 2020-03-17 2024-10-29 三亚普罗股份有限公司 Sulfonium salt, photoacid generator, curable composition, and resist composition
WO2022030139A1 (en) * 2020-08-05 2022-02-10 サンアプロ株式会社 Photoacid generator

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