WO2011006957A3 - Plaque transparente texturee et procede de fabrication d'une telle plaque - Google Patents

Plaque transparente texturee et procede de fabrication d'une telle plaque Download PDF

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Publication number
WO2011006957A3
WO2011006957A3 PCT/EP2010/060199 EP2010060199W WO2011006957A3 WO 2011006957 A3 WO2011006957 A3 WO 2011006957A3 EP 2010060199 W EP2010060199 W EP 2010060199W WO 2011006957 A3 WO2011006957 A3 WO 2011006957A3
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WO
WIPO (PCT)
Prior art keywords
plate
textured
manufacturing
general plane
transparent plate
Prior art date
Application number
PCT/EP2010/060199
Other languages
English (en)
Other versions
WO2011006957A2 (fr
Inventor
Michele Schiavoni
Patrick Gayout
Wolfgang Andreas Nositschka
Original Assignee
Saint-Gobain Glass France
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint-Gobain Glass France filed Critical Saint-Gobain Glass France
Priority to MX2012000722A priority Critical patent/MX341629B/es
Priority to EP10730808A priority patent/EP2454757A2/fr
Priority to JP2012520036A priority patent/JP2012533096A/ja
Priority to KR1020177013364A priority patent/KR20170058455A/ko
Priority to US13/384,406 priority patent/US9257580B2/en
Priority to CN201080041913.8A priority patent/CN102576742B/zh
Publication of WO2011006957A2 publication Critical patent/WO2011006957A2/fr
Publication of WO2011006957A3 publication Critical patent/WO2011006957A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

Abstract

Cette plaque transparente (1) monolithique comprend, sur au moins une de ses faces (3), au moins une région texturée par une pluralité de motifs géométriques (5) en relief par rapport à un plan général (π) de la face (3), chaque motif ayant une section transversale, parallèlement au plan général (π), qui décroît en s'éloignant de la face (3), depuis une base jusqu'à un sommet du motif. Selon l'invention, l'aire (S8) des zones (8) de la région texturée pour lesquelles l'angle d'inclinaison (α8) de la zone par rapport au plan général (π) est inférieur à 30° représente moins de 35%, de l'aire totale (Si) de la région texturée.
PCT/EP2010/060199 2009-07-16 2010-07-15 Plaque transparente texturee et procede de fabrication d'une telle plaque WO2011006957A2 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
MX2012000722A MX341629B (es) 2009-07-16 2010-07-15 Placa transparente texturada y procedimiento de fabricacion de tal placa.
EP10730808A EP2454757A2 (fr) 2009-07-16 2010-07-15 Plaque transparente texturee et procede de fabrication d'une telle plaque
JP2012520036A JP2012533096A (ja) 2009-07-16 2010-07-15 凹凸付き透明板及びそのような板の製造方法
KR1020177013364A KR20170058455A (ko) 2009-07-16 2010-07-15 텍스처된 투명판 및 그러한 판의 제조 방법
US13/384,406 US9257580B2 (en) 2009-07-16 2010-07-15 Textured transparent plate and method of manufacturing such a plate
CN201080041913.8A CN102576742B (zh) 2009-07-16 2010-07-15 带纹理的透明板和这种板的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0954908A FR2948230B1 (fr) 2009-07-16 2009-07-16 Plaque transparente texturee et procede de fabrication d'une telle plaque
FR0954908 2009-07-16

Publications (2)

Publication Number Publication Date
WO2011006957A2 WO2011006957A2 (fr) 2011-01-20
WO2011006957A3 true WO2011006957A3 (fr) 2012-03-08

Family

ID=42111042

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/060199 WO2011006957A2 (fr) 2009-07-16 2010-07-15 Plaque transparente texturee et procede de fabrication d'une telle plaque

Country Status (8)

Country Link
US (1) US9257580B2 (fr)
EP (1) EP2454757A2 (fr)
JP (3) JP2012533096A (fr)
KR (2) KR20170058455A (fr)
CN (1) CN102576742B (fr)
FR (1) FR2948230B1 (fr)
MX (1) MX341629B (fr)
WO (1) WO2011006957A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013061099A1 (fr) * 2011-10-27 2013-05-02 Christophoros Diakopoulos Panneaux photovoltaïques à haut rendement énergétique
US9876129B2 (en) * 2012-05-10 2018-01-23 International Business Machines Corporation Cone-shaped holes for high efficiency thin film solar cells
JP6186377B2 (ja) 2012-12-18 2017-08-23 パイオニア株式会社 発光装置
CN103824967A (zh) * 2013-12-30 2014-05-28 北京维信诺科技有限公司 一种具有内光取出结构的基板及其制造方法
EP3129724A2 (fr) * 2014-04-02 2017-02-15 Nebula Energy Inc. Concentrateurs de rayonnement solaire, procédés de concentration de rayonnement solaire, et objectifs prismatiques de concentration de rayonnement solaire
FR3035397A1 (fr) 2015-04-23 2016-10-28 Saint Gobain Verre texture pour serre
WO2017217303A1 (fr) * 2016-06-14 2017-12-21 ミネベアミツミ株式会社 Élément de commande de distribution de lumière et dispositif d'éclairage.
EP3599318B1 (fr) * 2018-07-27 2021-11-10 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Éléments de façade pourvus de plaque de couverture structurée et de couche d'interférence optique
EP3599647B1 (fr) * 2018-07-27 2021-09-08 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Module solaire pourvu de plaque de couverture structurée et de couche d'interférence optique
EP3858606B1 (fr) * 2020-01-28 2022-09-07 Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. Élément de façade colorée à structure de vitre composite

Citations (2)

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Publication number Priority date Publication date Assignee Title
US20030180476A1 (en) * 2002-03-25 2003-09-25 Sanyo Electric Co., Ltd. Antireflective member and electronic equipment using same
US20070240754A1 (en) * 2004-05-10 2007-10-18 Saint-Gobain Glass France Textured Transparent Film Having Pyramidal Patterns That Can Be Associated With Photovoltaic Cells

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NL1025191C2 (nl) * 2004-01-08 2005-07-11 Agrotechnology And Food Innova Afdekking voor een zonnestraling gebruikend object.
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FR2881844B1 (fr) 2005-02-09 2007-04-13 Saint Gobain Structure diffusante a proprietes d'absorption dans l'ultraviolet
DE102005027737B4 (de) 2005-06-16 2013-03-28 Saint-Gobain Glass Deutschland Gmbh Verwendung einer transparenten Scheibe mit einer dreidimensionalen Oberflächenstruktur als Deckscheibe für Bauelemente zur Nutzung des Sonnenlichts
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Publication number Priority date Publication date Assignee Title
US20030180476A1 (en) * 2002-03-25 2003-09-25 Sanyo Electric Co., Ltd. Antireflective member and electronic equipment using same
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Also Published As

Publication number Publication date
CN102576742B (zh) 2015-05-13
MX2012000722A (es) 2012-03-26
US20120183734A1 (en) 2012-07-19
CN102576742A (zh) 2012-07-11
EP2454757A2 (fr) 2012-05-23
US9257580B2 (en) 2016-02-09
JP2012533096A (ja) 2012-12-20
MX341629B (es) 2016-08-29
FR2948230A1 (fr) 2011-01-21
JP2015172777A (ja) 2015-10-01
JP3214571U (ja) 2018-01-25
KR20170058455A (ko) 2017-05-26
FR2948230B1 (fr) 2011-10-21
KR20120049265A (ko) 2012-05-16
WO2011006957A2 (fr) 2011-01-20

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