WO2011004039A3 - Dispositivo y filtro de onda acústica - Google Patents

Dispositivo y filtro de onda acústica Download PDF

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Publication number
WO2011004039A3
WO2011004039A3 PCT/ES2010/000292 ES2010000292W WO2011004039A3 WO 2011004039 A3 WO2011004039 A3 WO 2011004039A3 ES 2010000292 W ES2010000292 W ES 2010000292W WO 2011004039 A3 WO2011004039 A3 WO 2011004039A3
Authority
WO
WIPO (PCT)
Prior art keywords
compensating
electrodes
dielectric layer
acoustic wave
wave filter
Prior art date
Application number
PCT/ES2010/000292
Other languages
English (en)
French (fr)
Other versions
WO2011004039A2 (es
Inventor
Juan Carlos COLLADO GÓMEZ
Jordi Mateu Mateu
Alberto PADILLA DÍAZ
Joan O'CALLAGHAN CASTELLÁ
Eduard Rocas Cantenys
Original Assignee
Universitat Politécnica de Catalunya
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universitat Politécnica de Catalunya filed Critical Universitat Politécnica de Catalunya
Publication of WO2011004039A2 publication Critical patent/WO2011004039A2/es
Publication of WO2011004039A3 publication Critical patent/WO2011004039A3/es

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

El dispositivo comprende dos o más electrodos (1, 2), una capa activa piezoeléctrica (3) y unos medios de compensación de señales que comprenden como mínimo una capa compensatoria dieléctrica (4) configurada y ubicada para compensar señales espurias generadas, al aplicar una señal de entrada a dichos electrodos (1, 2), por unas no linealidades intrínsecas sustancialmente independientes de la temperatura, inherentes a las propiedades de elasticidad no lineales del material de al menos dicha capa activa (3). Para un ejemplo de realización los medios de compensación comprenden una fuente de tensión continua (Vdc) en conexión eléctrica con unas capas de alta conductividad (1, 2) entre las que se encuentra la capa compensatoria dieléctrica (4), para aplicar una tensión continua que varíe sus propiedades de elasticidad no lineales. El filtro comprende uno o más dispositivos como el propuesto por la invención.
PCT/ES2010/000292 2009-07-08 2010-07-07 Dispositivo y filtro de onda acústica WO2011004039A2 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ES200901579A ES2365772B2 (es) 2009-07-08 2009-07-08 Dispositivo y filtro de onda acústica.
ESP200901579 2009-07-08

Publications (2)

Publication Number Publication Date
WO2011004039A2 WO2011004039A2 (es) 2011-01-13
WO2011004039A3 true WO2011004039A3 (es) 2011-03-10

Family

ID=43429607

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/ES2010/000292 WO2011004039A2 (es) 2009-07-08 2010-07-07 Dispositivo y filtro de onda acústica

Country Status (2)

Country Link
ES (1) ES2365772B2 (es)
WO (1) WO2011004039A2 (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016103834B4 (de) * 2016-03-03 2018-12-06 Snaptrack, Inc. BAW-Vorrichtung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3965444A (en) * 1975-01-03 1976-06-22 Raytheon Company Temperature compensated surface acoustic wave devices
US4035775A (en) * 1971-10-01 1977-07-12 Raytheon Company Temperature compensated acoustic surface wave device
US20050110598A1 (en) * 2003-10-30 2005-05-26 Larson John D.Iii Temperature-compensated film bulk acoustic resonator (FBAR) devices
US20070222336A1 (en) * 2006-03-22 2007-09-27 Grannen Kevin J Temperature compensation of film bulk acoustic resonator devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4035775A (en) * 1971-10-01 1977-07-12 Raytheon Company Temperature compensated acoustic surface wave device
US3965444A (en) * 1975-01-03 1976-06-22 Raytheon Company Temperature compensated surface acoustic wave devices
US20050110598A1 (en) * 2003-10-30 2005-05-26 Larson John D.Iii Temperature-compensated film bulk acoustic resonator (FBAR) devices
US20070222336A1 (en) * 2006-03-22 2007-09-27 Grannen Kevin J Temperature compensation of film bulk acoustic resonator devices

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
MATEU ET AL.: "Intermodulation Distortion in Coupled-Resonator Filters With Nonuniformly Distributed Nonliner Properties-Use in HTS IMD Compensation", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 55, no. 4, April 2007 (2007-04-01), XP011176519, DOI: doi:10.1109/TMTT.2007.892802 *
ROCAS ET AL.: "Third order Intermodulation Distortion in Film Bulk Acoustic Resonators at Resonance and Antiresonance", MICROWAVE SYMPOSIUM DIGEST, 2008 IEEE MTT-S INTERNATIONAL, 15 June 2008 (2008-06-15) - 20 June 2008 (2008-06-20), ATLANTA, GA, USA *
SERON ET AL.: "Analysis and Simulation of Distributed Nonlinerities in Ferrotheectrics and Superconductors for Microwave Applications", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 54, no. 3, March 2006 (2006-03-01) *

Also Published As

Publication number Publication date
ES2365772A1 (es) 2011-10-11
WO2011004039A2 (es) 2011-01-13
ES2365772B2 (es) 2013-05-23

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