WO2010147304A2 - 방사각이 제어된 반도체 칩 - Google Patents

방사각이 제어된 반도체 칩 Download PDF

Info

Publication number
WO2010147304A2
WO2010147304A2 PCT/KR2010/002923 KR2010002923W WO2010147304A2 WO 2010147304 A2 WO2010147304 A2 WO 2010147304A2 KR 2010002923 W KR2010002923 W KR 2010002923W WO 2010147304 A2 WO2010147304 A2 WO 2010147304A2
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
semiconductor chip
emission angle
controlled emission
controlled
Prior art date
Application number
PCT/KR2010/002923
Other languages
English (en)
French (fr)
Other versions
WO2010147304A9 (ko
WO2010147304A3 (ko
Inventor
여환국
최원철
이종희
문영부
최성철
Original Assignee
(주)더리즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)더리즈 filed Critical (주)더리즈
Publication of WO2010147304A2 publication Critical patent/WO2010147304A2/ko
Publication of WO2010147304A3 publication Critical patent/WO2010147304A3/ko
Publication of WO2010147304A9 publication Critical patent/WO2010147304A9/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures

Abstract

본 발명은 방사각이 제어된 반도체 칩에 관한 것이다. 본 발명에 따른 반도체 칩은 기판과 기판 상에 형성된 발광소자를 구비하며, 기판의 상면과 수직한 법선을 기준 으로 법선과 이루는 각도에 따라 출력되는 광의 광량이 제어되도록, 기판이 형성된 다. 이를 위해, 기판의 옆면 중 적어도 하나는 기판의 상면과 기울어지게 형성되 고, 기판의 상면에는 요철이 형성될 수 있다.
PCT/KR2010/002923 2009-06-17 2010-05-07 방사각이 제어된 반도체 칩 WO2010147304A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20090053685A KR101063285B1 (ko) 2009-06-17 2009-06-17 방사각이 제어된 반도체 칩
KR10-2009-0053685 2009-06-17

Publications (3)

Publication Number Publication Date
WO2010147304A2 true WO2010147304A2 (ko) 2010-12-23
WO2010147304A3 WO2010147304A3 (ko) 2011-02-17
WO2010147304A9 WO2010147304A9 (ko) 2011-04-07

Family

ID=43356849

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/002923 WO2010147304A2 (ko) 2009-06-17 2010-05-07 방사각이 제어된 반도체 칩

Country Status (2)

Country Link
KR (1) KR101063285B1 (ko)
WO (1) WO2010147304A2 (ko)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338637A (ja) * 2002-03-14 2003-11-28 Toshiba Corp 半導体発光素子および半導体発光装置
JP2007019262A (ja) * 2005-07-07 2007-01-25 Toshiba Discrete Technology Kk 半導体発光素子及び半導体発光素子の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3176856B2 (ja) * 1995-12-14 2001-06-18 沖電気工業株式会社 端面発光型ｌｅｄ、端面発光型ｌｅｄアレイ、光源装置及びそれらの製造方法
US6229160B1 (en) 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
TWI236772B (en) * 2002-03-14 2005-07-21 Toshiba Corp Semiconductor light emitting element and semiconductor light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338637A (ja) * 2002-03-14 2003-11-28 Toshiba Corp 半導体発光素子および半導体発光装置
JP2007019262A (ja) * 2005-07-07 2007-01-25 Toshiba Discrete Technology Kk 半導体発光素子及び半導体発光素子の製造方法

Also Published As

Publication number Publication date
WO2010147304A9 (ko) 2011-04-07
KR101063285B1 (ko) 2011-09-07
WO2010147304A3 (ko) 2011-02-17
KR20100135360A (ko) 2010-12-27

Similar Documents

Publication Publication Date Title
WO2008118826A3 (en) Systems and methods for producing white-light light emitting diodes
EP2466658A3 (en) LED including a phosphor layer, LED package and methods of manufacturing the same
WO2010074734A3 (en) Color correction for wafer level white leds
WO2009140947A3 (de) Optoelektronisches modul
EP3875850A3 (en) Light-emitting device
EP4242516A3 (en) Light emitting module and lens
WO2010033341A3 (en) Optical disk for lighting module
TW200746410A (en) Optoelectronic headlight, its manufacturing method and light-emitting diode chip
WO2009041462A1 (ja) 窒化物系半導体発光素子、窒化物系半導体レーザ素子、窒化物系半導体発光ダイオードおよびそれらの製造方法ならびに窒化物系半導体層の形成方法
TW200639907A (en) Systems and methods for producing light emitting diode array
WO2010144591A3 (en) High light extraction efficiency solid state light sources
WO2008106915A3 (de) Anordnung mit einem halbleiterchip und einer lichtleiterschicht
TW200701520A (en) Systems and methods for producing white-light emitting diodes
WO2010027672A3 (en) Phosphor-converted led
EP2333854A3 (en) Light emitting diode, method for fabricating phosphor layer, and lighting apparatus
TW200705709A (en) Method of making a vertical light emitting diode
WO2013017364A3 (de) Optoelektronische anordnung und verfahren zur herstellung einer optoelektronischen anordnung
JP2008091911A5 (ko)
EP2378572A3 (en) Electrode configuration for a light emitting device
EP2372796A3 (en) Light emitting diode package and light unit having the same
MY172467A (en) A light emitting device and a manufacturing method thereof
TW200742124A (en) Semiconductor light-emitting device
WO2013019534A3 (en) Light emitting die (led) lamps, heat sinks and related methods
WO2009002129A3 (en) Semiconductor light emitting device and method of manufacturing the same
TW200608823A (en) Top emitting, electroluminescent component with frequency conversion centres

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10789631

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase in:

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10789631

Country of ref document: EP

Kind code of ref document: A2