WO2010142268A3 - Mehrschichtelektrode für photovoltaische bauelemente, verfahren zu ihrer herstellung und photovoltaisches bauelement mit einer solchen mehrschichtelektrode - Google Patents

Mehrschichtelektrode für photovoltaische bauelemente, verfahren zu ihrer herstellung und photovoltaisches bauelement mit einer solchen mehrschichtelektrode Download PDF

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Publication number
WO2010142268A3
WO2010142268A3 PCT/DE2010/000617 DE2010000617W WO2010142268A3 WO 2010142268 A3 WO2010142268 A3 WO 2010142268A3 DE 2010000617 W DE2010000617 W DE 2010000617W WO 2010142268 A3 WO2010142268 A3 WO 2010142268A3
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WO
WIPO (PCT)
Prior art keywords
metal
multilayer electrode
electrode
multilayer
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2010/000617
Other languages
English (en)
French (fr)
Other versions
WO2010142268A2 (de
Inventor
Marin Rusu
Sven Wiesner
Konstantinos Fostiropoulos
Martha Christina Lux-Steiner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Original Assignee
Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH filed Critical Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Priority to EP10731454A priority Critical patent/EP2441102A2/de
Publication of WO2010142268A2 publication Critical patent/WO2010142268A2/de
Publication of WO2010142268A3 publication Critical patent/WO2010142268A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/81Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211Fullerenes, e.g. C60
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Es wird eine Mehrschichtelektrode angegeben, die mindestens aufweisend zwei auf einem Absorber angeordnete Metallschichten aufweist, bei der die die Grenzfläche mit dem Absorber bildende erste Elektrodenschicht E1 als eine Mischschicht A:B eines Metalls A dieser Elektrodenschicht E1 und des Metalls B der zweiten Elektrodenschicht E2 gebildet ist, wobei die Konzentration des Metalls A der Elektrodenschicht E1 größer ist als die Konzentration des Metalls B der Elektrodenschicht E2 und im Falle, dass die Mehrschichtelektrode als Kathode ausgebildet ist, das Metall A eine kleinere Austrittsarbeit aufweist als das Metall B oder im Falle, dass die Mehrschichtelektrode als Anode ausgebildet ist, das Metall A eine größere Austrittsarbeit aufweist als das Metall B und die Dicke der ersten Elektrodenschicht E1 kleiner ist als die Dicke der zweiten Elektrodenschicht E2. Weiterhin wird ein Herstellungsverfahren für eine derartige Mehrschichtelektrode angegeben sowie eine organische Solarzelle mit einer solchen Mehrschichtelektrode.
PCT/DE2010/000617 2009-06-11 2010-06-01 Mehrschichtelektrode für photovoltaische bauelemente, verfahren zu ihrer herstellung und photovoltaisches bauelement mit einer solchen mehrschichtelektrode Ceased WO2010142268A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10731454A EP2441102A2 (de) 2009-06-11 2010-06-01 Mehrschichtelektrode für photovoltaische bauelemente, verfahren zu ihrer herstellung und photovoltaisches bauelement mit einer solchen mehrschichtelektrode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009024953A DE102009024953A1 (de) 2009-06-11 2009-06-11 Mehrschichtelektrode für photovoltaische Bauelemente, Verfahren zu ihrer Herstellung und photovoltaisches Bauelement mit einer solchen Mehrschichtelektrode
DE102009024953.2 2009-06-11

Publications (2)

Publication Number Publication Date
WO2010142268A2 WO2010142268A2 (de) 2010-12-16
WO2010142268A3 true WO2010142268A3 (de) 2011-02-24

Family

ID=43015779

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2010/000617 Ceased WO2010142268A2 (de) 2009-06-11 2010-06-01 Mehrschichtelektrode für photovoltaische bauelemente, verfahren zu ihrer herstellung und photovoltaisches bauelement mit einer solchen mehrschichtelektrode

Country Status (3)

Country Link
EP (1) EP2441102A2 (de)
DE (1) DE102009024953A1 (de)
WO (1) WO2010142268A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015011529A1 (de) 2015-09-03 2017-03-09 Baumgartner & Lamperstorfer Instruments GmbH Verfahren zur Herstellung von Elektroden sowie deren Verwendung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11329746A (ja) * 1997-04-25 1999-11-30 Tdk Corp 有機el素子
US6420031B1 (en) * 1997-11-03 2002-07-16 The Trustees Of Princeton University Highly transparent non-metallic cathodes
JP2004335610A (ja) * 2003-05-02 2004-11-25 National Institute Of Advanced Industrial & Technology 有機半導体デバイス
US20070138637A1 (en) * 2005-12-19 2007-06-21 Shiva Prakash Electronic device having low background luminescence, a black layer, or any combination thereof

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
AT56105B (de) 1911-12-22 1912-11-11 Heylandt Ges M B H Fa Metallgefäß zum Aufbewahren und Transport tiefsiedender flüssiger Gase.
US6198092B1 (en) * 1998-08-19 2001-03-06 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with an electrically parallel configuration
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US20020036291A1 (en) * 2000-06-20 2002-03-28 Parker Ian D. Multilayer structures as stable hole-injecting electrodes for use in high efficiency organic electronic devices
DE10326546A1 (de) 2003-06-12 2005-01-05 Siemens Ag Organische Solarzelle mit einer Zwischenschicht mit asymmetrischen Transporteigenschaften
DE102004050891B4 (de) 2004-10-19 2019-01-10 Lumileds Holding B.V. Lichtmittierende III-Nitrid-Halbleitervorrichtung
JP5261397B2 (ja) * 2006-11-17 2013-08-14 サン−ゴバン グラス フランス 有機発光素子用の電極、その酸エッチング、及び、それを組み込んだ有機発光素子
DE102007009995A1 (de) 2007-03-01 2008-09-04 Hahn-Meitner-Institut Berlin Gmbh Organische Solarzelle
WO2009070534A1 (en) * 2007-11-28 2009-06-04 Konarka Technologies Gmbh Organic photovoltaic cells comprising a doped metal oxide buffer layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11329746A (ja) * 1997-04-25 1999-11-30 Tdk Corp 有機el素子
US6420031B1 (en) * 1997-11-03 2002-07-16 The Trustees Of Princeton University Highly transparent non-metallic cathodes
JP2004335610A (ja) * 2003-05-02 2004-11-25 National Institute Of Advanced Industrial & Technology 有機半導体デバイス
US20070138637A1 (en) * 2005-12-19 2007-06-21 Shiva Prakash Electronic device having low background luminescence, a black layer, or any combination thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
RUSU M ET AL: "Fine tailored interpenetrating donor-acceptor morphology by OVPD for organic solar cells", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 516, no. 20, 30 August 2008 (2008-08-30), pages 7160 - 7166, XP022777930, ISSN: 0040-6090, [retrieved on 20071208], DOI: DOI:10.1016/J.TSF.2007.12.004 *

Also Published As

Publication number Publication date
WO2010142268A2 (de) 2010-12-16
EP2441102A2 (de) 2012-04-18
DE102009024953A1 (de) 2011-02-10

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