WO2010140447A1 - 有機薄膜トランジスタ、面状光源及び表示装置 - Google Patents
有機薄膜トランジスタ、面状光源及び表示装置 Download PDFInfo
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- WO2010140447A1 WO2010140447A1 PCT/JP2010/057960 JP2010057960W WO2010140447A1 WO 2010140447 A1 WO2010140447 A1 WO 2010140447A1 JP 2010057960 W JP2010057960 W JP 2010057960W WO 2010140447 A1 WO2010140447 A1 WO 2010140447A1
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- 0 CB1OC(C)(C)C(C)C1C(*)O Chemical compound CB1OC(C)(C)C(C)C1C(*)O 0.000 description 1
- USMRYMUZKSMTRL-UHFFFAOYSA-N CB1OCCO1 Chemical compound CB1OCCO1 USMRYMUZKSMTRL-UHFFFAOYSA-N 0.000 description 1
- ULFPBVSCYAHJJN-UHFFFAOYSA-N CB1Oc(cccc2)c2O1 Chemical compound CB1Oc(cccc2)c2O1 ULFPBVSCYAHJJN-UHFFFAOYSA-N 0.000 description 1
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- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
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- C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
- C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
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- C08G2261/324—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed
- C08G2261/3243—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed containing one or more sulfur atoms as the only heteroatom, e.g. benzothiophene
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- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
Definitions
- the present invention relates to an organic thin film transistor, a planar light source, and a display device.
- An organic transistor in which a semiconductor layer that functions as a carrier transport layer is made of an organic material can be manufactured at low cost, and has a characteristic that it can be bent because a circuit is flexible. It is suitable for applications such as electronic paper and flexible displays, and has attracted attention in recent years.
- An organic semiconductor material is used as the organic material constituting the semiconductor layer (organic semiconductor layer) described above.
- Non-Patent Document 1 a polymer compound composed of an alternating copolymer of fluorene and bithiophene has been proposed (see Non-Patent Document 1).
- the characteristics of the organic thin film transistor mainly depend on the mobility of charges (electrons and holes) in the organic semiconductor layer.
- the higher the mobility of this charge the higher the field effect mobility of the organic thin film transistor, and the superior characteristics.
- applications of organic thin film transistors have been diversified, and higher charge mobility is required than ever before.
- the conventional polymer compound as described above it tends to be difficult to sufficiently obtain the high mobility required in recent years.
- the present invention has found a polymer compound that can obtain high charge mobility when used in an organic semiconductor layer of an organic thin film transistor, and has excellent field effect migration by using this polymer compound.
- An object of the present invention is to provide an organic thin film transistor capable of obtaining a degree.
- an object of this invention is to provide a planar light source and a display apparatus provided with the said organic thin-film transistor.
- the present invention provides a repeating unit represented by the following general formula (1) and / or a repeating unit represented by the following general formula (2) and the following general formula (3).
- An organic thin film transistor including an organic semiconductor layer including a polymer compound having a repeating unit represented by the present invention is provided.
- X 1 and X 2 are the same or different and represent a chalcogen atom
- R 3 , R 4 , R 5 and R 6 are the same or different, and a hydrogen atom, an alkyl group, an alkoxy group, an alkylthio group, Aryl group optionally having a substituent, aryloxy group, arylthio group, arylalkyl group, arylalkoxy group, arylalkylthio group, substituted silyl group, substituted carboxyl group, monovalent optionally having substituent A heterocyclic group, a cyano group or a fluorine atom.
- X 11 and X 12 are the same or different and each represents a chalcogen atom
- R 13 , R 14 , R 15 and R 16 are the same or different
- a hydrogen atom an alkyl group, an alkoxy group, an alkylthio group
- Aryl group optionally having a substituent, aryloxy group, arylthio group, arylalkyl group, arylalkoxy group, arylalkylthio group, substituted silyl group, substituted carboxyl group, monovalent optionally having substituent A heterocyclic group, a cyano group or a fluorine atom.
- Y represents an arylene group condensed with three or more aromatic rings which may have a substituent, a divalent heterocyclic group which may have a substituent, and a substituent.
- a divalent group having a metal complex structure which may be present or a group represented by —C ⁇ C— is represented, and n represents an integer of 1 to 5.
- the plurality of Y may be the same or different.
- the polymer compound has a repeating unit represented by the general formula (1) and / or a repeating unit represented by the general formula (2) and a repeating unit represented by the general formula (3).
- R 3 to R 6 in the general formula (1) are hydrogen atoms and / or R 13 to R 16 in the general formula (2) are hydrogen atoms.
- the charge mobility of the polymer compound is further improved, and the organic thin film transistor can easily obtain better field effect mobility.
- At least one of X 1 and X 2 in the general formula (1) and X 11 and X 12 in the general formula (2) is a sulfur atom. preferable.
- the mobility of the charge of the polymer compound is further improved, and the organic thin film transistor can easily obtain a better field effect mobility and is excellent in environmental aspects.
- Y in the general formula (3) is preferably a divalent heterocyclic group which may have a substituent.
- the repeating unit represented by the general formula (3) is preferably a repeating unit represented by the following general formula (4).
- the charge mobility of the polymer compound is further improved, and the organic thin film transistor can easily obtain better field effect mobility.
- the repeating unit represented by the following general formula (4) two thiophene rings can rotate about a single bond connecting them. Therefore, the repeating unit represented by the following general formula (4) includes a repeating unit in which each thiophene ring is arranged so that each sulfur atom has the same side with respect to the axis.
- R 20 , R 21 , R 22 and R 23 are the same or different and are a hydrogen atom, an alkyl group, an alkoxy group, an alkylthio group, an aryl group which may have a substituent, or an aryloxy group.
- At least one of R 20 , R 21 , R 22 and R 23 in the general formula (4) is preferably an alkyl group having 6 to 20 carbon atoms. Thereby, the balance between the solubility of the polymer compound in the organic solvent and the heat resistance can be improved.
- the present invention also provides a planar light source comprising the organic thin film transistor of the present invention.
- the present invention further provides a display device comprising the organic thin film transistor of the present invention.
- planar light source and the display device include the organic thin film transistor of the present invention having excellent field effect mobility, excellent characteristics can be exhibited.
- the polymer compound having the specific structure described above can obtain high charge mobility when used in an organic semiconductor layer of an organic thin film transistor.
- an organic thin film transistor capable of obtaining excellent field effect mobility can be provided by using the above polymer compound.
- the planar light source and display apparatus provided with the said organic thin-film transistor can be provided.
- the organic thin film transistor of the present invention can be used, for example, in a drive circuit for a liquid crystal display or electronic paper drive circuit, a switch circuit for a curved or flat light source for illumination, a segment type display element, a dot matrix flat panel display, etc. Useful.
- the “repeating unit” means a structural unit present in one or more polymer compounds.
- the “n-valent heterocyclic group” (n is 1 or 2) is formed by removing n hydrogen atoms from a heterocyclic compound (particularly a heterocyclic compound having aromaticity). Means group.
- heterocyclic compound means not only a carbon atom but also an oxygen atom, a sulfur atom, a nitrogen atom, a phosphorus atom, a boron atom, etc. as an element constituting a ring among organic compounds having a cyclic structure. The thing containing a hetero atom.
- the polymer compound used in the organic semiconductor layer of the organic thin film transistor of the present invention is a repeating unit represented by the above general formula (1) and / or a repeating unit represented by the above general formula (2) and the above general formula. It has a repeating unit represented by Formula (3).
- X 1 , X 2 , X 11 and X 12 are the same or different and represent a chalcogen atom.
- Examples of the chalcogen atom include an oxygen atom, a sulfur atom, a selenium atom, and a tellurium atom. From the viewpoint of improving charge transfer, a sulfur atom, a selenium atom, and a tellurium atom are preferable, and a sulfur atom is more preferable from the environmental viewpoint.
- R 3 to R 6 and R 13 to R 16 may be the same or different and may have a hydrogen atom, an alkyl group, an alkoxy group, an alkylthio group, or a substituent.
- the alkyl group may be linear, branched or cyclic, and preferably has 1 to 24 carbon atoms, more preferably 6 to 22 carbon atoms, and still more preferably 8 to 18 carbon atoms.
- Specific examples of the alkyl group include methyl group, ethyl group, propyl group, i-propyl group, butyl group, i-butyl group, t-butyl group, pentyl group, isoamyl group, hexyl group, cyclohexyl group, heptyl group.
- Octyl group 2-ethylhexyl group, nonyl group, decyl group, 3,7-dimethyloctyl group, undecyl group, dodecyl group, tetradecyl group, hexadodecyl group, octadodecyl group, trifluoromethyl group, pentafluoroethyl group, A perfluorobutyl group, a perfluorohexyl group, a perfluorooctyl group, and the like can be given.
- the alkoxy group may be linear, branched or cyclic, and preferably has 1 to 24 carbon atoms, more preferably 6 to 22 carbon atoms.
- Specific examples of the alkoxy group include methoxy group, ethoxy group, propyloxy group, i-propyloxy group, butoxy group, i-butoxy group, t-butoxy group, pentyloxy group, hexyloxy group, cyclohexyloxy group, Heptyloxy group, octyloxy group, 2-ethylhexyloxy group, nonyloxy group, decyloxy group, 3,7-dimethyloctyloxy group, undecyloxy group, dodecyloxy group, tetradecyloxy group, hexadecyloxy group, octadecyloxy group Group, trifluoromethoxy group, pentafluoroethoxy group, perfluorobutoxy group, perfluor
- hexyloxy group, octyloxy group, 2-ethylhexyloxy group, decyloxy group, 3,7-dimethyl are used from the viewpoint of improving the balance between the solubility of the polymer compound in the organic solvent and the heat resistance.
- An octyloxy group, an undecyloxy group, a dodecyloxy group, a tetradecyloxy group, a hexadecyloxy group, and an octadecyloxy group are preferred.
- the alkylthio group may be linear, branched or cyclic, and preferably has 1 to 24 carbon atoms, more preferably 6 to 22 carbon atoms.
- Specific examples of the alkylthio group include methylthio group, ethylthio group, propylthio group, i-propylthio group, butylthio group, i-butylthio group, t-butylthio group, pentylthio group, hexylthio group, cyclohexylthio group, heptylthio group, octylthio group.
- Group, undecylthio group, dodecylthio group, tetradecylthio group, hexadecylthio group and octadecylthio group are preferred.
- the aryl group is an atomic group obtained by removing one hydrogen atom from an aromatic hydrocarbon, and has a condensed ring or two or more independent benzene rings or condensed rings bonded directly or via a vinylene group.
- Including The aryl group preferably has 6 to 60 carbon atoms, more preferably 6 to 48 carbon atoms, still more preferably 6 to 20 carbon atoms, and particularly preferably 6 to 10 carbon atoms.
- aryl group examples include phenyl group, 1-naphthyl group, 2-naphthyl group, 1-anthracenyl group, 2-anthracenyl group, 9-anthracenyl group, 1-tetracenyl group, 2-tetracenyl group, 5-tetracenyl group.
- Some or all of the hydrogen atoms constituting these groups can be further substituted with alkyl groups, alkoxy groups, alkyloxycarbonyl groups, acyl groups, N, N-dialkylamino groups, N, N-diarylamino groups, cyano groups, nitro groups, It may be substituted with a group, a chlorine atom, a fluorine atom or the like, but the carbon number of these substituents is not included in the carbon number of the aryl group.
- the aryloxy group preferably has 6 to 60 carbon atoms, more preferably 7 to 48 carbon atoms.
- Specific examples of the aryloxy group include a phenoxy group and a C 1 -C 18 alkoxyphenoxy group (“C 1 -C 18 alkoxy” indicates that the alkoxy moiety has 1 to 18 carbon atoms.
- C 1 -C 18 alkylphenoxy group (“C 1 -C 18 alkyl” indicates that the alkyl moiety has 1 to 18 carbon atoms, the same shall apply hereinafter), 1-naphthyl An oxy group, a 2-naphthyloxy group, a pentafluorophenyloxy group, and the like can be given.
- C 1 -C 18 alkoxyphenoxy groups and C 1 -C 18 alkylphenoxy groups are preferred from the viewpoint of improving the balance between the solubility of the polymer compound in an organic solvent and the heat resistance.
- Specific examples of the C 1 -C 18 alkoxyphenoxy group include a methoxyphenoxy group, an ethoxyphenoxy group, a propyloxyphenoxy group, an i-propyloxyphenoxy group, a butoxyphenoxy group, an i-butoxyphenoxy group, and a t-butoxyphenoxy group.
- Pentyloxyphenoxy group hexyloxyphenoxy group, cyclohexyloxyphenoxy group, heptyloxyphenoxy group, octyloxyphenoxy group, 2-ethylhexyloxyphenoxy group, nonyloxyphenoxy group, decyloxyphenoxy group, 3,7-dimethyloctyloxy Phenoxy group, undecyloxyphenoxy group, dodecyloxyphenoxy group, tetradecyloxyphenoxy group, hexadecyloxyphenoxy group, octadecyloxyphenoxy group Like it is exemplified.
- C 1 to C 18 alkylphenoxy group examples include methylphenoxy group, ethylphenoxy group, dimethylphenoxy group, propylphenoxy group, 1,3,5-trimethylphenoxy group, methylethylphenoxy group, i-propylphenoxy group.
- the arylthio group preferably has 3 to 60 carbon atoms.
- Specific examples of the arylthio group include a phenylthio group, a C 1 -C 18 alkoxyphenylthio group, a C 1 -C 18 alkylphenylthio group, a 1-naphthylthio group, a 2-naphthylthio group, a pentafluorophenylthio group, and the like. It is done.
- C 1 -C 18 alkoxyphenylthio groups and C 1 -C 18 alkylphenylthio groups are preferred from the viewpoint of improving the balance between the solubility of the polymer compound in the organic solvent and the heat resistance.
- the arylalkyl group preferably has 7 to 60 carbon atoms, more preferably 7 to 48 carbon atoms. Specific examples of the arylalkyl group, a phenyl -C 1 ⁇ C 18 alkyl group, C 1 ⁇ C 18 alkoxyphenyl -C 1 ⁇ C 18 alkyl group, C 1 ⁇ C 18 alkyl phenyl -C 1 ⁇ C 18 alkyl Group, 1-naphthyl-C 1 -C 18 alkyl group, 2-naphthyl-C 1 -C 18 alkyl group and the like.
- C 1 ⁇ C 18 alkoxyphenyl -C 1 ⁇ C 18 alkyl group C 1 ⁇ C 18 alkyl A phenyl-C 1 -C 18 alkyl group is preferred.
- the arylalkoxy group preferably has 7 to 60 carbon atoms, more preferably 7 to 48 carbon atoms.
- Specific examples of the arylalkoxy group include phenyl-C 1 -C 1 such as phenylmethoxy group, phenylethoxy group, phenylbutoxy group, phenylpentyloxy group, phenylhexyloxy group, phenylheptyloxy group, and phenyloctyloxy group.
- the arylalkylthio group preferably has 7 to 60 carbon atoms, more preferably 7 to 48 carbon atoms.
- Specific examples of the arylalkylthio group include a phenyl -C 1 ⁇ C 18 alkylthio group, C 1 ⁇ C 18 alkoxyphenyl -C 1 ⁇ C 18 alkylthio group, C 1 ⁇ C 18 alkyl phenyl -C 1 ⁇ C 18 alkylthio Group, 1-naphthyl-C 1 -C 18 alkylthio group, 2-naphthyl-C 1 -C 18 alkylthio group and the like.
- C 1 -C 18 alkoxyphenyl-C 1 -C 18 alkylthio group C 1 -C 18 alkyl thio group, from the viewpoint of improving the balance between the solubility of the polymer compound in the organic solvent and the heat resistance.
- a phenyl-C 1 -C 18 alkylthio group is preferred.
- a hydrogen atom in the silyl group is substituted with 1, 2 or 3 groups selected from the group consisting of alkyl groups, aryl groups, arylalkyl groups and monovalent heterocyclic groups Is mentioned.
- the substituted silyl group preferably has 1 to 60 carbon atoms, more preferably 3 to 48 carbon atoms.
- the alkyl group, aryl group, arylalkyl group or monovalent heterocyclic group which is a substituent of the silyl group may further have a substituent. It is not included in the carbon number of the group.
- substituted silyl group examples include trimethylsilyl group, triethylsilyl group, tripropylsilyl group, tri-i-propylsilyl group, dimethyl-i-propylsilyl group, diethyl-i-propylsilyl group, t-butylsilyldimethylsilyl group, Pentyldimethylsilyl group, hexyldimethylsilyl group, heptyldimethylsilyl group, octyldimethylsilyl group, 2-ethylhexyl-dimethylsilyl group, nonyldimethylsilyl group, decyldimethylsilyl group, 3,7-dimethyloctyldimethylsilyl group, undecyl dimethylsilyl group, dodecyl dimethyl silyl group, tetradecyl dimethyl silyl group, hexadecyl dimethyl silyl group
- Examples of the substituted carboxyl group include a carboxyl group in which a hydrogen atom in the carboxyl group is substituted with an alkyl group, an aryl group, an arylalkyl group, or a monovalent heterocyclic group.
- the substituted carboxyl group has preferably 2 to 60 carbon atoms, more preferably 2 to 48 carbon atoms.
- substituted carboxyl group examples include a methoxycarbonyl group, an ethoxycarbonyl group, a propoxycarbonyl group, an i-propoxycarbonyl group, a butoxycarbonyl group, an i-butoxycarbonyl group, a t-butoxycarbonyl group, a pentyloxycarbonyl group, a hexyl group.
- alkyl group, aryl group, arylalkyl group or monovalent heterocyclic group which is a substituent of the carboxyl group may further have a substituent, and the carbon number of these substituents is the substituted carboxyl. It is not included in the carbon number of the group.
- the monovalent heterocyclic group preferably has 4 to 60 carbon atoms, and more preferably 4 to 20 carbon atoms.
- Specific examples of the monovalent heterocyclic group include thienyl group, pyrrolyl group, furyl group, pyridyl group, piperidyl group, quinolyl group, isoquinolyl group, pyrimidyl group, triazinyl group and the like.
- a thienyl group, a pyridyl group, a quinolyl group, an isoquinolyl group, a pyrimidyl group, and a triazinyl group are preferable, and a thienyl group, a pyridyl group, a pyrimidyl group, and a triazinyl group are more preferable.
- the monovalent heterocyclic group may further have a substituent such as an alkyl group or an alkoxy group, but the carbon number of these substituents is not included in the carbon number of the monovalent heterocyclic group. I will do it.
- the substitution position of the substituent of the general formula (1) or (2) is any one axis in the repeating unit. It is preferably a position that is line-symmetric with respect to the center or a point-symmetric structure with respect to the center of gravity.
- R 3 and R 5 and / or R 4 and R It is preferable that 6 is the same group.
- R 13 and R 15 and / or R 14 and R 16 are the same group.
- the “same group” means groups classified into the same type, for example, alkyl groups or alkoxy groups. These similar groups are more preferably groups having the same structure and the same chain length, branching position and substituent.
- R 3 , R 4 , R 5 and R 6 are preferably hydrogen atoms.
- R 13 , R 14 , R 15 and R 16 are hydrogen atoms.
- the repeating unit represented by the general formula (1) is preferably a repeating unit represented by the following general formula (10), and the repeating unit represented by the general formula (2) is It is preferably a repeating unit represented by the following general formula (11).
- X 1 in the general formula (1) and (2), X 2, X 11 and X 12 It is synonymous with.
- the polymer compound further has a repeating unit represented by the general formula (3).
- Y represents an arylene group condensed with three or more aromatic rings which may have a substituent, a divalent heterocyclic group which may have a substituent, and a substituent.
- a divalent group having a metal complex structure which may have a group or a group represented by —C ⁇ C— is shown.
- the arylene group condensed with three or more aromatic rings means an atomic group formed by removing two hydrogen atoms from a polycyclic aromatic hydrocarbon condensed with three or more aromatic rings, and is an independent benzene ring Or the thing with a condensed ring is included.
- An arylene group having less than three condensed aromatic rings is not preferable because the charge mobility of the polymer compound becomes insufficient.
- the number of condensed rings of the aromatic ring is preferably 3 to 7 rings, and more preferably 3 to 5 rings.
- the arylene group in which three or more aromatic rings are condensed is particularly preferably a group obtained by removing two hydrogen atoms from an acene compound having 3 to 5 rings.
- arylene group condensed with three or more aromatic rings include a 1,4-anthracenediyl group, a 1,5-anthracenediyl group, a 2,6-anthracenediyl group, and a 9,10-anthracenediyl group.
- Unsubstituted or substituted anthracenediyl groups such as 2,7-phenanthrenediyl group and the like; 1,7-naphthacenediyl group, 2,8-naphthacenediyl group, 5,12-naphthacenediyl group, etc.
- An unsubstituted or substituted naphthacenediyl group an unsubstituted or substituted pyrenediyl group such as a 1,6-pyrenediyl group, a 1,8-pyrenediyl group, a 2,7-pyrenediyl group, a 4,9-pyrenediyl group;
- Non-substituted or substituted perylenediyl groups such as perylenediyl group and 3,10-perylenediyl group It is below.
- an unsubstituted or substituted anthracenediyl group is preferable.
- the divalent heterocyclic group preferably has 4 to 60 carbon atoms, more preferably 4 to 48, still more preferably 4 to 30, particularly preferably 4 to 22, and particularly preferably. 4 to 12, very preferably 4.
- the divalent heterocyclic group may have a substituent, but the carbon number of the substituent is not included in the carbon number of the divalent heterocyclic group.
- divalent heterocyclic group examples include an unsubstituted or substituted thiophenediyl group such as a 2,5-thiophenediyl group; an unsubstituted or substituted furandyl group such as a 2,5-furandiyl group; 2 , 5-pyridinediyl group, 2,6-pyridinediyl group and the like unsubstituted or substituted pyridinediyl group; 2,6-quinolinediyl group and the like unsubstituted or substituted quinolinediyl group; 1,4-isoquinolinediyl group, 1 Unsubstituted or substituted isoquinolinediyl group such as 5,5-isoquinolinediyl group; Unsubstituted or substituted quinoxalinediyl group such as 5,8-quinoxalinediyl group; 4,7-benzo [1,2,5] thiadiazolediyl group Unsubstituted or substituted or
- unsubstituted or substituted thiophene diyl groups such as 2,5-thiophenediyl group; unsubstituted or substituted frangyl groups such as 2,5-furandiyl group; 2,5-pyridinediyl group, 2, Unsubstituted or substituted pyridinediyl group such as 6-pyridinediyl group; Unsubstituted or substituted quinolinediyl group such as 2,6-quinolinediyl group; 1,4-isoquinolinediyl group is preferable, 2,5-thiophenediyl group and the like
- the unsubstituted or substituted thiophenediyl group is more preferable.
- the substituent is preferably an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an arylalkyl group, an arylalkoxy group, an arylalkylthio group. And those selected from the group consisting of a group, a substituted silyl group, a monovalent heterocyclic group, a substituted carboxyl group, a nitro group, a cyano group and a fluorine atom.
- an alkyl group, an alkoxy group, an aryl group, an aryloxy group, and a monovalent heterocyclic group are more preferable, an alkyl group, an alkoxy group, and an alkylthio group are more preferable, and an alkyl group is particularly preferable.
- the alkyl group is preferably an alkyl group having 6 to 20 carbon atoms, more preferably an alkyl group having 8 to 18 carbon atoms, from the viewpoint of improving the balance between the solubility of the polymer compound in an organic solvent and the heat resistance. .
- the above-mentioned divalent group having a metal complex structure means a remaining atomic group obtained by removing two hydrogen atoms from an organic ligand of a metal complex having an organic ligand and a central metal.
- the metal complex include a low-molecular fluorescent material, a metal complex known as a phosphorescent material, and a triplet light-emitting complex.
- the carbon number of the organic ligand in the metal complex is preferably 4 to 60.
- the organic ligand include 8-quinolinol and derivatives thereof, benzoquinolinol and derivatives thereof, 2-phenyl-pyridine and derivatives thereof, 2-phenyl-benzothiazole and derivatives thereof, and 2-phenyl-benzoxazole and derivatives thereof. , Porphyrin and derivatives thereof.
- Examples of the central metal of the metal complex include aluminum, zinc, beryllium, iridium, platinum, gold, europium, and terbium.
- n is an integer of 1 to 5, preferably an integer of 1 to 4, more preferably an integer of 1 to 3, and further preferably 1 or 2.
- the repeating unit represented by the general formula (3) is particularly preferably a repeating unit represented by the general formula (4).
- R 20 , R 21 , R 22 and R 23 are the same or different and are a hydrogen atom, an alkyl group, an alkoxy group, an alkylthio group, an aryl group which may have a substituent, an aryloxy A group, an arylalkyl group, an arylalkoxy group, a substituted silyl group, a carboxyl group, a monovalent heterocyclic group optionally having a substituent, a cyano group or a fluorine atom; From the viewpoint of improving the balance between the solubility of the polymer compound in the organic solvent and the heat resistance, at least one of R 20 , R 21 , R 22 and R 23 in the general formula (4) is a carbon number.
- R 20 and R 23 and / or R 21 and R 22 are more preferably alkyl groups having 6 to 20 carbon atoms.
- the alkyl group preferably has 8 to 18 carbon atoms from the same viewpoint as described above.
- the above general formula (1) with respect to the total number of moles of all repeating units.
- the above general formula (1) with respect to the total number of moles of all repeating units.
- the ratio of the total number of moles of the repeating unit represented by the general formula (2) is preferably 20 to 80%, more preferably 30 to 70%, More preferably, it is 40 to 60%, and particularly preferably 45 to 55%.
- the polymer compound has both the repeating unit represented by the general formula (1) and the repeating unit represented by the general formula (2), the main chain orientation of the polymer compound is improved.
- the ratio of the number of moles of the smaller repeating unit to the total number of moles of the repeating unit represented by the general formula (1) and the repeating unit represented by the general formula (2) is 10% or less. Preferably, it is 5% or less, more preferably 1% or less, and particularly preferably 0.05% or less.
- the ratio of the total number of moles of the repeating unit represented by the general formula (3) to the total number of moles of all repeating units is from the viewpoint of charge injection and solubility in an organic solvent. It is preferably 20 to 80%, more preferably 30 to 70%, still more preferably 40 to 60%, and particularly preferably 45 to 55%.
- the polymer compound may be any copolymer, and may be any of a block copolymer, a random copolymer, an alternating copolymer, a graft copolymer, and the like.
- the repeating unit represented by the general formula (1) and / or the repeating unit represented by the general formula (2) and the general formula It is preferable to have a structure in which the repeating units represented by 3) are alternately bonded.
- the polymer compound has either one of the repeating units represented by the above general formula (1) or (2) and the repeating represented by the above general formula (3). More preferably, it has a structure in which units are alternately bonded, and a structure in which the repeating unit represented by the general formula (1) and the repeating unit represented by the general formula (3) are alternately bonded. It is particularly preferable to have
- the polymer compound is represented by the repeating unit represented by the general formula (1) and / or the general formula (2) with respect to all repeating units from the viewpoint of improving the charge transfer property of the polymer compound.
- the ratio of the repeating unit contained in the structure in which the repeating unit and the repeating unit represented by the general formula (3) are alternately bonded is preferably 90% or more, and more preferably 99% or more. Preferably, it is 99.5% or more, more preferably 99.9% or more.
- the polymer compound preferably has a polystyrene-equivalent weight average molecular weight (Mw) of 1 ⁇ 10 3 to 1 ⁇ 10 8 by gel permeation chromatography (hereinafter referred to as “GPC”). From the viewpoint, it is more preferably 1 ⁇ 10 4 to 5 ⁇ 10 6 , and particularly preferably 1 ⁇ 10 4 to 5 ⁇ 10 5 .
- Mw polystyrene-equivalent weight average molecular weight
- the terminal group of the polymer compound is preferably a stable group.
- Such a terminal group is preferably one having a conjugated bond to the main chain, such as a structure bonded to an aryl group or a heterocyclic group via a carbon-carbon bond.
- substituents described in Chemical formula 10 of JP-A-9-45478 can be exemplified as terminal groups.
- the polymer compound is obtained, for example, by condensation polymerization of one or more compounds represented by the following general formula (5) or (6) and one or more compounds represented by the following general formula (7). Can be manufactured.
- X 1 , X 2 , X 11 , X 12 , R 3 to R 6 , R 13 to R 16 and n are in the above general formulas (1) to (3).
- Z 1 , Z 2 , Z 11 , Z 12 , Z 21 , Z 22 are the same or different and are a halogen atom, a sulfonate group represented by the following general formula (a-1), a methoxy group, a borate ester residue
- a boric acid residue that is, a group represented by —B (OH) 2 ), a group represented by the following general formula (a-2), a group represented by the following general formula (a-3), or Represents a group represented by the following general formula (a-4).
- R 31 represents an unsubstituted or substituted alkyl group or an unsubstituted or substituted aryl group.
- R 32 represents an unsubstituted or substituted alkyl group or an unsubstituted or substituted aryl group. A plurality of R 32 may be the same or different.
- a chlorine atom, a bromine atom, and an iodine atom are mentioned.
- the boric acid ester residues represented by Z 1 , Z 2 , Z 11 , Z 12 , Z 21 and Z 22 are represented by the following chemical formulas, for example. Groups.
- definitions and specific examples of the alkyl group and aryl group represented by R 31 are R 3 to R 6 and R 13 to R in the general formulas (1) and (2).
- the definitions and specific examples described in the section of 16 substituents are the same.
- Examples of the sulfonate group represented by the general formula (a-1) include a methanesulfonate group, a trifluoromethanesulfonate group, a phenylsulfonate group, and a 4-methylphenylsulfonate group.
- the definition and specific examples of the alkyl group and aryl group represented by R 32 are as follows: R 3 to R 6 , R 13 to R in the general formulas (1) and (2) The definitions and specific examples described in the section of 16 substituents are the same.
- Examples of the group represented by the general formula (a-4) include a trimethylstannanyl group, a triethylstannanyl group, and a tributylstannanyl group.
- the compounds represented by the general formulas (5) to (7) may be synthesized and isolated in advance, or may be prepared in a reaction system and used as they are.
- Z 1 , Z 2 , Z 11 , Z 12 , Z 21, and Z 22 represent the simple synthesis of the compounds represented by the general formulas (5) to (7). From the viewpoint of ease of handling and the like, a halogen atom, a boric acid ester residue, and a boric acid residue are preferable.
- condensation polymerization method examples include a method of reacting the compounds represented by the general formulas (5) to (7) with an appropriate catalyst or an appropriate base, if necessary.
- Examples of the catalyst used in the above reaction include palladium [tetrakis (triphenylphosphine)], [tris (dibenzylideneacetone)] dipalladium, palladium complexes such as palladium acetate, nickel [tetrakis (triphenylphosphine)], [1 , 3-bis (diphenylphosphino) propane] dichloronickel, nickel complexes such as [bis (1,4-cyclooctadiene)] nickel, transition metal complexes such as these, and transition metal complexes such as triphenylphosphine, Examples thereof include a catalyst comprising a ligand such as (t-butylphosphine), tricyclohexylphosphine, diphenylphosphinopropane, bipyridyl and the like.
- a catalyst synthesized in advance may be used, or a catalyst prepared in a reaction system may be used as it is. The said catalyst may be used
- the amount thereof is preferably 0.00001 to 3 molar equivalents as the amount of the transition metal compound relative to the total number of moles of the compounds represented by the general formulas (5) to (7). , 0.00005 to 0.5 molar equivalent, more preferably 0.0001 to 0.2 molar equivalent.
- examples of the base used in the above reaction include inorganic bases such as sodium carbonate, potassium carbonate, cesium carbonate, potassium fluoride, cesium fluoride, and tripotassium phosphate, tetrabutylammonium fluoride, tetrabutylammonium chloride, odor And organic bases such as tetrabutylammonium bromide and tetrabutylammonium hydroxide.
- inorganic bases such as sodium carbonate, potassium carbonate, cesium carbonate, potassium fluoride, cesium fluoride, and tripotassium phosphate, tetrabutylammonium fluoride, tetrabutylammonium chloride, odor And organic bases such as tetrabutylammonium bromide and tetrabutylammonium hydroxide.
- the amount is preferably 0.5 to 20 molar equivalents relative to the total number of moles of the compounds represented by the general formulas (5) to (7). A molar equivalent is more preferable.
- the condensation polymerization may be performed in the absence of a solvent or in the presence of a solvent, but is preferably performed in the presence of an organic solvent.
- the organic solvent varies depending on the types of the compounds represented by the general formulas (5) to (7) and the type of the polymerization reaction. For example, toluene, xylene, mesitylene, tetrahydrofuran, 1,4-dioxane, dimethoxyethane N, N-dimethylacetamide, N, N-dimethylformamide and the like.
- a solvent that has been subjected to deoxygenation treatment may be used alone or in combination of two or more.
- the amount used is such that the total concentration of the compounds represented by the general formulas (5) to (7) is preferably 0.1 to 90% by mass, more preferably 1 to 50% by mass. %, More preferably 2 to 30% by mass.
- the reaction temperature of the condensation polymerization is preferably ⁇ 100 ° C. to 200 ° C., more preferably ⁇ 80 ° C. to 150 ° C., and further preferably 0 ° C. to 120 ° C.
- the reaction time for the above condensation polymerization is preferably 1 hour or longer, more preferably 2 to 500 hours, although it depends on conditions such as reaction temperature.
- Examples of the method of performing the condensation polymerization include a method of polymerizing by a Suzuki reaction (Chem. Rev., Vol. 95, page 2457 (1995)), a method of polymerizing by a Grignard reaction (Kyoritsu Shuppan, High Molecular Functional Materials Series Volume 2, Polymer Synthesis and Reaction (2), pp. 432-433), Polymerization by Yamamoto Polymerization (Prog. Polym. Sci.), Volume 17, 1153- 1205, 1992).
- the post-treatment of the condensation polymerization can be performed by a known method.
- a method of adding the reaction solution obtained by the condensation polymerization to a lower alcohol such as methanol and filtering and drying the deposited precipitate can be mentioned. .
- the polymer compound of the present invention can be obtained by the above-mentioned post-treatment, but if the purity of the polymer compound is low, it can be purified by usual methods such as recrystallization, continuous extraction with a Soxhlet extractor, column chromatography, etc. Good.
- a method of polymerizing a combination with a compound in which Z 21 and Z 22 in general formula (7) are halogen atoms by using Suzuki polymerization is preferable.
- R 3 and R 5 and / or R 4 and R 6 in the general formula (5) are the same group, and R 13 and R 15 in the general formula (6) and / or or, it is preferred that R 14 and R 16 is a group of the same type.
- R 3 , R 4 , R 5 and R 6 in the general formula (5) are hydrogen atoms, and R 13 , R 14 , R 15 and R 16 in the general formula (6) are hydrogen atoms. More preferably.
- Organic thin film transistor Next, a preferred embodiment of the organic thin film transistor of the present invention including the organic semiconductor layer containing the above-described polymer compound will be described.
- the organic thin film transistor includes a source electrode and a drain electrode, an organic semiconductor layer (active layer) containing the polymer compound as a current path between them, and a gate electrode for controlling the amount of current passing through the current path.
- An effect type, an electrostatic induction type, etc. are illustrated.
- a field effect organic thin film transistor includes a source electrode and a drain electrode, an organic semiconductor layer (active layer) serving as a current path between them, a gate electrode for controlling the amount of current passing through the current path, and an organic semiconductor layer and a gate electrode It is preferable to provide an insulating layer disposed between the two.
- the source electrode and the drain electrode are preferably provided in contact with the organic semiconductor layer (active layer), and the gate electrode is preferably provided with an insulating layer in contact with the organic semiconductor layer interposed therebetween.
- the static induction organic thin film transistor has a source electrode and a drain electrode, an organic semiconductor layer (active layer) serving as a current path between them, and a gate electrode that controls the amount of current passing through the current path. It is preferable to be provided in the organic semiconductor layer.
- the source electrode, the drain electrode, and the gate electrode provided in the organic semiconductor layer are preferably provided in contact with the organic semiconductor layer.
- the structure of the gate electrode may be a structure in which a current path flowing from the source electrode to the drain electrode is formed and the amount of current flowing through the current path can be controlled by a voltage applied to the gate electrode. An electrode is mentioned.
- FIG. 1 is a schematic cross-sectional view of an organic thin film transistor (field effect organic thin film transistor) according to a first embodiment.
- the organic thin film transistor 100 shown in FIG. 1 is formed on the substrate 1 so as to cover the substrate 1, the source electrode 5 and the drain electrode 6 formed on the substrate 1 with a predetermined interval, and the source electrode 5 and the drain electrode 6.
- a gate electrode 4 is a schematic cross-sectional view of an organic thin film transistor (field effect organic thin film transistor) according to a first embodiment.
- the organic thin film transistor 100 shown in FIG. 1 is formed on the substrate 1 so as to cover the substrate 1, the source electrode 5 and the drain electrode 6 formed on the substrate 1 with a predetermined interval, and the source electrode 5 and the drain electrode 6.
- Formed on the insulating layer 3 so as to cover the region
- FIG. 2 is a schematic cross-sectional view of an organic thin film transistor (field effect organic thin film transistor) according to a second embodiment.
- the organic thin film transistor 110 shown in FIG. 2 includes a substrate 1, a source electrode 5 formed on the substrate 1, an organic semiconductor layer 2 formed on the substrate 1 so as to cover the source electrode 5, The drain electrode 6 formed on the organic semiconductor layer 2 with a predetermined interval, the insulating layer 3 formed on the organic semiconductor layer 2 and the drain electrode 6, and the insulation between the source electrode 5 and the drain electrode 6 And a gate electrode 4 formed on the insulating layer 3 so as to cover the region of the layer 3.
- FIG. 3 is a schematic cross-sectional view of an organic thin film transistor (field effect organic thin film transistor) according to a third embodiment.
- 3 includes a substrate 1, a gate electrode 4 formed on the substrate 1, an insulating layer 3 formed on the substrate 1 so as to cover the gate electrode 4, and the gate electrode 4 at the bottom.
- FIG. 4 is a schematic cross-sectional view of an organic thin film transistor (field effect organic thin film transistor) according to a fourth embodiment.
- 4 includes a substrate 1, a gate electrode 4 formed on the substrate 1, an insulating layer 3 formed on the substrate 1 so as to cover the gate electrode 4, and the gate electrode 4 at the bottom.
- FIG. 5 is a schematic cross-sectional view of an organic thin film transistor (static induction organic thin film transistor) according to a fifth embodiment.
- 5 includes a substrate 1, a source electrode 5 formed on the substrate 1, an organic semiconductor layer 2 formed on the source electrode 5, and a plurality of organic thin film transistors 140 with a predetermined interval on the organic semiconductor layer 2.
- a drain electrode 6 formed on the organic semiconductor layer 2a.
- FIG. 6 is a schematic cross-sectional view of an organic thin film transistor (field effect organic thin film transistor) according to a sixth embodiment.
- An organic thin film transistor 150 shown in FIG. 6 includes a substrate 1, an organic semiconductor layer 2 formed on the substrate 1, a source electrode 5 and a drain electrode 6 formed on the organic semiconductor layer 2 with a predetermined interval, and a source electrode. 5 and the drain electrode 6 so as to partially cover the insulating layer 3 formed on the organic semiconductor layer 2, the region of the insulating layer 3 where the source electrode 5 is formed below, and the drain electrode 6 are formed below. And a gate electrode 4 formed on the insulating layer 3 so as to partially cover the region of the insulating layer 3.
- FIG. 7 is a schematic cross-sectional view of an organic thin film transistor (field effect organic thin film transistor) according to a seventh embodiment.
- An organic thin film transistor 160 shown in FIG. 7 includes a substrate 1, a gate electrode 4 formed on the substrate 1, an insulating layer 3 formed on the substrate 1 so as to cover the gate electrode 4, and the gate electrode 4 at the bottom.
- the organic semiconductor layer 2 formed so as to cover the region of the insulating layer 3 formed on the organic semiconductor layer 2 and the organic semiconductor layer 2 so as to partially cover the region of the organic semiconductor layer 2 on which the gate electrode 4 is formed below.
- the drain formed on the organic semiconductor layer 2 with a predetermined distance from the source electrode 5 so as to partially cover the region of the organic semiconductor layer 2 on which the source electrode 5 and the gate electrode 4 are formed below.
- the electrode 6 is provided.
- the organic semiconductor layer 2 and / or the organic semiconductor layer 2a are composed of the organic thin film containing the above-described polymer compound, and the source electrode 5 and the drain electrode 6 is a current path (channel) between the two.
- the gate electrode 4 controls the amount of current passing through the current path (channel) in the organic semiconductor layer 2 and / or the organic semiconductor layer 2a by applying a voltage.
- a field effect organic thin film transistor can be manufactured by a known method, for example, a method described in JP-A-5-110069.
- the electrostatic induction organic thin film transistor can be produced by a known method, for example, a method described in JP-A-2004-006476.
- the substrate 1 may be any glass substrate, flexible film substrate, plastic substrate, or the like as long as it does not hinder the characteristics of the organic thin film transistor.
- the organic semiconductor layer 2 includes the above-described polymer compound, and may be composed of only the polymer compound or may be composed of materials other than the polymer compound. Further, the organic semiconductor layer 2 may include one kind of the above-described polymer compound alone, or may include two kinds or more of the above-described polymer compound. The organic semiconductor layer 2 may further contain a low molecular compound or a polymer compound having an electron transport property or a hole transport property in addition to the above polymer compound in order to improve the electron transport property or the hole transport property.
- hole transporting material known materials can be used, such as pyrazoline derivatives, arylamine derivatives, stilbene derivatives, triaryldiamine derivatives, oligothiophenes and derivatives thereof, polyvinylcarbazole and derivatives thereof, polysilanes and derivatives thereof, side chains or main chains.
- pyrazoline derivatives such as pyrazoline derivatives, arylamine derivatives, stilbene derivatives, triaryldiamine derivatives, oligothiophenes and derivatives thereof, polyvinylcarbazole and derivatives thereof, polysilanes and derivatives thereof, side chains or main chains.
- examples include polysiloxane derivatives having an aromatic amine in the chain, polyaniline and derivatives thereof, polythiophene and derivatives thereof, polypyrrole and derivatives thereof, polyarylene vinylene and derivatives thereof, and polythienylene vinylene and derivatives thereof.
- Known materials can be used as electron transporting materials, such as oxadiazole derivatives, anthraquinodimethane and its derivatives, benzoquinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives, tetracyanoanthraquinodimethane and its derivatives. , fluorenone derivatives, diphenyldicyanoethylene and derivatives thereof, diphenoquinone derivatives, 8-hydroxyquinoline and metal complexes of derivatives thereof, polyquinoline and derivatives thereof, polyquinoxaline and its derivatives, polyfluorene and its derivatives, and fullerenes such as C 60 And derivatives thereof.
- the organic semiconductor layer 2 may contain a polymer compound material other than the above as a polymer binder in order to enhance mechanical properties.
- a polymer binder those not extremely disturbing the electron transport property or hole transport property are preferable, and those having no strong absorption against visible light are preferably used.
- Such polymer binders include poly (N-vinylcarbazole), polyaniline and derivatives thereof, polythiophene and derivatives thereof, poly (p-phenylene vinylene) and derivatives thereof, poly (2,5-thienylene vinylene) and derivatives thereof.
- Examples include derivatives, polycarbonate, polyacrylate, polymethyl acrylate, polymethyl methacrylate, polystyrene, polyvinyl chloride, and polysiloxane.
- the film thickness of the organic semiconductor layer 2 is preferably 1 nm to 100 ⁇ m, more preferably 2 nm to 1000 nm, still more preferably 3 nm to 500 nm, and particularly preferably 5 nm to 200 nm.
- Examples of the method for producing the organic semiconductor layer 2 include a method of forming a film using a solution containing the above-described polymer compound, an electron transporting material or a hole transporting material mixed as necessary, a polymer binder, and the like. Is done. Further, when the polymer compound is an oligomer, it can be formed into a thin film by a vacuum deposition method.
- any solvent may be used as long as it can dissolve the above polymer compound, an electron transporting material or a hole transporting material mixed as necessary, and a polymer binder.
- solvents include unsaturated hydrocarbon solvents such as toluene, xylene, mesitylene, tetralin, decalin, bicyclohexyl, n-butylbenzene, sec-butylbenzene, tert-butylbenzene; carbon tetrachloride, chloroform Halogenated saturated hydrocarbon solvents such as dichloromethane, dichloroethane, chlorobutane, bromobutane, chloropentane, bromopentane, chlorohexane, bromohexane, chlorocyclohexane and bromocyclohexane; halogenated unsaturated carbonized solvents such as chlorobenzene, dichlorobenz
- the film formation method for forming the organic semiconductor layer 2 from a solution includes spin coating, casting, micro gravure coating, gravure coating, bar coating, roll coating, wire bar coating, and dip coating.
- Spray coating method, screen printing method, flexographic printing method, offset printing method, inkjet printing method, dispenser printing method, etc. can be used, spin coating method, flexographic printing method, inkjet printing method, dispenser printing method can be used preferable.
- a step of orienting the polymer compound may be performed. By this step, the organic semiconductor layer 2 containing the polymer compound in an oriented state is obtained.
- Such an organic semiconductor layer 2 is preferable because main chain molecules or side chain molecules are arranged in one direction, and thus the electron mobility or hole mobility is improved.
- a method known as a liquid crystal alignment method can be used as a method of aligning the polymer compound.
- the rubbing method, the photo-alignment method, the sharing method (shear stress application method) and the pulling coating method are preferable because they are simple, useful and easy to use as the alignment method, and the rubbing method and the sharing method are more preferable.
- any material having high electrical insulation may be used, and a known material can be used.
- the constituent material of the insulating layer 3 include SiOx, SiNx, Ta 2 O 5 , polyimide, polyvinyl alcohol, polyvinyl phenol, organic glass, and photoresist. From the viewpoint of lowering the voltage, it is preferable to use a material having a high dielectric constant for the insulating layer 3.
- the surface of the insulating layer 3 is treated with a surface treatment agent such as a silane coupling agent in order to improve the interface characteristics between the insulating layer 3 and the organic semiconductor layer 2. It is also possible to form the organic semiconductor layer 2 after the surface modification.
- a surface treatment agent such as a silane coupling agent
- silane coupling agents include alkylchlorosilanes (octyltrichlorosilane (OTS), octadecyltrichlorosilane (ODTS), phenylethyltrichlorosilane, etc.), alkylalkoxysilanes, fluorinated alkylchlorosilanes, fluorinated alkylalkoxysilanes, Examples thereof include silylamine compounds such as hexamethyldisilazane (HMDS). Further, the surface of the insulating layer can be treated with ozone UV or O 2 plasma before the treatment with the surface treatment agent.
- OTS octyltrichlorosilane
- ODTS octadecyltrichlorosilane
- phenylethyltrichlorosilane phenylethyltrichlorosilane, etc.
- alkylalkoxysilanes fluorin
- the surface energy of the silicon oxide film used as the insulating layer 3 can be controlled. Further, the surface treatment improves the orientation of the polymer compound constituting the organic semiconductor layer 2 on the insulating layer 3, thereby obtaining high carrier transportability (mobility).
- the gate electrode 4 examples include metals such as gold, platinum, silver, copper, chromium, palladium, aluminum, indium, molybdenum, low resistance polysilicon, low resistance amorphous silicon, tin oxide, indium oxide, indium / tin oxide.
- a material such as (ITO) can be used. These materials can be used alone or in combination of two or more.
- a highly doped silicon substrate can be used as the gate electrode 4.
- a highly doped silicon substrate has not only a property as a gate electrode but also a property as a substrate.
- the substrate 1 may be omitted in the organic thin film transistor in which the substrate 1 and the gate electrode 4 are in contact with each other.
- the gate electrode 4 can also serve as the substrate 1.
- the source electrode 5 and the drain electrode 6 are made of a low-resistance material, for example, gold, platinum, silver, copper, chromium, palladium, aluminum, indium, molybdenum, or the like.
- gold and platinum are preferable from the viewpoint of charge injection, and gold is more preferable from the viewpoint of process ease. These materials may be used alone or in combination of two or more.
- the organic thin film transistor of the preferred embodiment is not limited to the above embodiment.
- a layer made of a compound different from the above-described polymer compound may be interposed between the source electrode 5 and the drain electrode 6 and the organic semiconductor layer 2. Thereby, the contact resistance between the source electrode 5 and the drain electrode 6 and the organic semiconductor layer 2 is reduced, and the carrier mobility of the organic thin film transistor may be further increased.
- Such layers include low molecular compounds having electron or hole transport properties as described above; alkali metals, alkaline earth metals, rare earth metals, complexes of these metals with organic compounds, etc .; iodine, bromine, chlorine, Halogens such as iodine chloride; sulfur oxide compounds such as sulfuric acid, sulfuric anhydride, sulfur dioxide, and sulfates; nitric oxide compounds such as nitric acid, nitrogen dioxide, and nitrates; halogenated compounds such as perchloric acid and hypochlorous acid; alkylthiols Examples thereof include a layer made of an aromatic thiol compound such as a compound, an aromatic thiol, and a fluorinated alkyl aromatic thiol.
- the organic thin film transistor as described above it is preferable to form a protective film on the organic thin film transistor in order to protect the element.
- a protective film is formed on the organic thin film transistor in order to protect the element.
- Examples of the method for forming the protective film include a method of covering the organic thin film transistor with a UV curable resin, a thermosetting resin, an inorganic SiONx film, or the like.
- a UV curable resin for example, a UV curable resin
- a thermosetting resin for example, a thermosetting resin
- an inorganic SiONx film for example, a thermosetting resin
- an inorganic SiONx film for example, a dry nitrogen atmosphere or in a vacuum.
- the planar light source and the display device include at least two organic thin film transistors, that is, a driving transistor and a switching transistor.
- the planar light source and display device of the present invention use the above-described organic thin film transistor of the present invention as at least one of the organic thin film transistors.
- FIG. 8 is a schematic cross-sectional view of a planar light source according to a preferred embodiment.
- An organic thin film transistor T is constituted by the organic semiconductor layer 2 formed on the insulating layer 3 so as to partially cover the organic semiconductor layer 2 and the protective film 11 formed on the organic semiconductor layer 2 so as to cover the entire organic semiconductor layer 2. Yes.
- a lower electrode (anode) 13, a light emitting element 14, and an upper electrode (cathode) 15 are sequentially stacked on the organic thin film transistor T via an interlayer insulating film 12.
- the lower electrode 13 and the drain electrode 6 are electrically connected through a via hole provided in 12.
- a bank portion 16 is provided around the lower electrode 13 and the light emitting element 14.
- a substrate 18 is disposed above the upper electrode 15, and a gap between the upper electrode 15 and the substrate 18 is sealed with a sealing member 17.
- the organic thin film transistor T functions as a drive transistor. Further, in the planar light source 200 shown in FIG. 8, the switching transistor is omitted.
- the organic thin film transistor of the present invention described above is used as the organic thin film transistor T.
- the structural member in a well-known planar light source can be used.
- substrate 18, a transparent thing is used.
- planar light source 200 shown in FIG. 8 functions as a planar light source by using a white light emitting material for the light emitting element 14, but uses a red light emitting material, a blue light emitting material, and a green light emitting material for the light emitting element 14. By controlling the driving of each light emitting element, a color display device can be obtained.
- both the anode and the cathode may be formed in stripes and arranged so as to be orthogonal to each other. Partial color display and multi-color display are possible by a method of separately coating a plurality of types of polymer phosphors having different emission colors or a method using a color filter or a fluorescence conversion filter.
- the dot matrix element can be driven passively, or may be actively driven in combination with a TFT or the like.
- These display elements can be used as display devices for computers, televisions, mobile terminals, mobile phones, car navigation systems, video camera viewfinders, and the like.
- the molecular weight of the polymer compound is determined by using a GPC (trade name: LC-10Avp) manufactured by Shimadzu Corporation or a GPC laboratory product GPC (trade name: PL-GPC2000) to obtain a weight average molecular weight in terms of polystyrene. It was measured by.
- the polymer compound When measuring with LC-10Avp, the polymer compound was dissolved in tetrahydrofuran to a concentration of about 0.5% by mass, and 50 ⁇ L was injected into GPC. At this time, tetrahydrofuran was used as the mobile phase of GPC, and flowed at a flow rate of 0.6 mL / min.
- TSKgel SuperHM-H manufactured by Tosoh
- TSKgel SuperH2000 manufactured by Tosoh
- a differential refractive index detector (manufactured by Shimadzu Corporation, trade name: RID-10A) was used as the detector.
- the polymer compound when measured with PL-GPC2000, the polymer compound was dissolved in o-dichlorobenzene so as to have a concentration of about 1% by mass. At this time, o-dichlorobenzene was used as the mobile phase of GPC, and it was allowed to flow at a measurement temperature of 140 ° C. at a flow rate of 1 mL / min. As the column, three PLGEL 10 ⁇ m MIXED-B (PL Laboratory) were connected in series.
- Example 1 (Production of organic thin film transistor) Using the polymer compound (1) obtained in Synthesis Example 1, an organic thin film transistor having the structure shown in FIG. 9 was produced by the following method. First, the surface of a heavily doped n-type silicon substrate 31 to be a gate electrode was thermally oxidized to form a 200 nm silicon oxide film 32. Next, a source electrode 33 and a drain electrode 34 (from the silicon oxide film side in the order of chromium and gold) having a channel length of 20 ⁇ m and a channel width of 2 mm were formed on the silicon oxide film 32 by a photolithography process. After sufficiently washing the substrate thus obtained, the surface of the substrate was silane-treated by spin coating using hexamethylene disilazane (HMDS).
- HMDS hexamethylene disilazane
- the polymer compound (1) obtained in Synthesis Example 1 is dissolved in orthodichlorobenzene to prepare a 0.5% by mass solution, filtered through a membrane filter, and then subjected to the above surface treatment. It was applied on the coated substrate by spin coating. Thereby, an organic semiconductor layer 35 having a thickness of about 30 nm containing the polymer compound (1) was formed, and an organic thin film transistor was obtained.
- the present invention it is possible to provide an organic thin film transistor capable of obtaining excellent field effect mobility by using a polymer compound having a specific structure.
- the planar light source and display apparatus provided with the said organic thin-film transistor can be provided.
- the organic thin film transistor of the present invention can be used, for example, in a drive circuit for a liquid crystal display or electronic paper drive circuit, a switch circuit for a curved or flat light source for illumination, a segment type display element, a dot matrix flat panel display, etc. Useful.
- Organic thin film transistor according to the second embodiment 120 ... Organic thin film transistor according to the third embodiment, 130 ... Organic thin film transistor according to the fourth embodiment, 140 ... Organic thin film transistor according to the fifth embodiment, 150... Organic thin film transistor according to the sixth embodiment, 160... Organic thin film transistor according to the seventh embodiment, 200. Source.
Abstract
Description
[式(1)中、X1及びX2は同一又は異なり、カルコゲン原子を示し、R3、R4、R5及びR6は同一又は異なり、水素原子、アルキル基、アルコキシ基、アルキルチオ基、置換基を有していてもよいアリール基、アリールオキシ基、アリールチオ基、アリールアルキル基、アリールアルコキシ基、アリールアルキルチオ基、置換シリル基、置換カルボキシル基、置換基を有していてもよい1価の複素環基、シアノ基又はフッ素原子を示す。]
[式(2)中、X11及びX12は同一又は異なり、カルコゲン原子を示し、R13、R14、R15及びR16は同一又は異なり、水素原子、アルキル基、アルコキシ基、アルキルチオ基、置換基を有していてもよいアリール基、アリールオキシ基、アリールチオ基、アリールアルキル基、アリールアルコキシ基、アリールアルキルチオ基、置換シリル基、置換カルボキシル基、置換基を有していてもよい1価の複素環基、シアノ基又はフッ素原子を示す。]
[式(3)中、Yは置換基を有していてもよい3つ以上の芳香族環が縮合したアリーレン基、置換基を有していてもよい2価の複素環基、置換基を有していてもよい金属錯体構造を有する2価の基、又は、-C≡C-で表される基を示し、nは1~5の整数を示す。なお、Yが複数存在する場合、複数のYはそれぞれ同一でも異なっていてもよい。]
[式(4)中、R20、R21、R22及びR23は同一又は異なり、水素原子、アルキル基、アルコキシ基、アルキルチオ基、置換基を有していてもよいアリール基、アリールオキシ基、アリールアルキル基、アリールアルコキシ基、置換シリル基、カルボキシル基、置換基を有していてもよい1価の複素環基、シアノ基又はフッ素原子を示す。]
本発明の有機薄膜トランジスタの有機半導体層に用いられる高分子化合物は、上記一般式(1)で表される繰り返し単位、及び/又は、上記一般式(2)で表される繰り返し単位と、上記一般式(3)で表される繰り返し単位とを有するものである。
次に、上述した構造を有する高分子化合物の好ましい製造方法について説明する。
[式中、XAは、ハロゲン原子を示す。]
[式中、XAは、ハロゲン原子を示す。]
[式中、R32は、非置換若しくは置換のアルキル基、又は、非置換若しくは置換のアリール基を示す。なお、複数存在するR32はそれぞれ同一でも異なっていてもよい。]
次に、上述した高分子化合物を含有する有機半導体層を備える本発明の有機薄膜トランジスタの好適な実施形態について説明する。
次に、本発明の有機薄膜トランジスタを用いた面状光源及び表示装置について説明する。
以下の実施例において、高分子化合物の分子量は、島津製作所製GPC(商品名:LC-10Avp)又はGPCラボラトリー製GPC(商品名:PL-GPC2000)を用い、ポリスチレン換算の重量平均分子量を求めることにより測定した。
50mL3つ口フラスコに、4,4’-ジドデシル-5,5’-ビス(4,4,5,5-テトラメチル-1,3,5-ジオキサボロラン-2-イル)-2,2’-ビチオフェン(319mg、0.4mmol)、2,6-ジブロモナフト[1,8-bc:5,4-b’c’]ジチオフェン(149mg、0.4mmol)、トリス(ジベンジリデンアセトン)ジパラジウム(0)(7.3mg、0.008mmol)、トリターシャリーブチルホスホニウムテトラフルオロボレート(9.3mg、0.032mmol)、テトラヒドロフラン(7.7mL)を入れた。ここへ、2mol/Lの炭酸カリウム水溶液(0.6mL)を加え、40℃で2時間反応させた後、5時間還流しながら撹拌させた。
(有機薄膜トランジスタの作製)
合成例1で得られた高分子化合物(1)を用い、以下の方法で図9に示す構造を有する有機薄膜トランジスタを作製した。まず、ゲート電極となる高濃度にドーピングされたn-型シリコン基板31の表面を熱酸化し、200nmのシリコン酸化膜32を形成した。次に、フォトリソ工程によりシリコン酸化膜32上にチャネル長20μm、チャネル幅2mmのソース電極33、ドレイン電極34(シリコン酸化膜側から、クロム、金の順)を作製した。こうして得られた基板を十分洗浄した後、ヘキサメチレンジシラザン(HMDS)を用いて、スピンコート法により基板の表面をシラン処理した。次に、合成例1で得られた高分子化合物(1)をオルトジクロロベンゼンに溶解して0.5質量%の溶液を作製し、メンブランフィルターでろ過した後、この溶液を上記表面処理を行った基板上にスピンコート法により塗布した。これにより、高分子化合物(1)を含む厚さ約30nmの有機半導体層35を形成し、有機薄膜トランジスタを得た。
作製した有機薄膜トランジスタに、ゲート電圧Vgを40~-40V、ソース・ドレイン間電圧Vsdを0~-40Vに変化させてトランジスタ特性を測定した。その結果、伝達特性でVg=-40V、Vsd=-40Vにおいてドレイン電流0.04μAが得られた。また、この特性から電界効果移動度は8×10-4cm2/Vsと算出された。
50mL3つ口フラスコに4,4’-ジドデシル-5,5’-ビス(4,4,5,5-テトラメチル-1,3,5-ジオキサボロラン-2-イル)-2,2’-ビチオフェン(341mg、0.452mmol)、2,7-ジブロモ-4,5-ジヘプチルベンゾ[2,1-b:3,4-b’]ジチオフェン(246mg、0.452mmol)、トリス(ジベンジリデンアセトン)ジパラジウム(0)(8.3mg、0.009mmol)、トリターシャリーブチルホスホニウムテトラフルオロボレート(10.5mg、0.036mmol)、テトラヒドロフラン(12mL)を入れた。この溶液を60℃に加熱し、そこへ、2mol/Lの炭酸カリウム水溶液(0.7mL)を加え、3時間還流撹拌させた。ここへ、フェニルボロン酸(9mg)、テトラヒドロフラン(3mL)を加え、さらに4.5時間還流撹拌させた。続いて、N,N-ジエチルジチオカルバミド酸ナトリウム三水和物(0.25g)と水(6mL)を加え、12時間還流しながら撹拌させた。
(有機薄膜トランジスタの作製)
合成例2で得られた高分子化合物(2)をトルエンに溶解して0.5質量%溶液を作製した。この溶液を用いて有機半導体層35を形成した以外は実施例1と同様にして、有機薄膜トランジスタを作製した。
作製した有機薄膜トランジスタに、ゲート電圧Vgを40~-40V、ソース・ドレイン間電圧Vsdを0~-40Vに変化させてトランジスタ特性を測定した。その結果、伝達特性でVg=-40V、Vsd=-40Vにおいてドレイン電流値は0.002μAであり、実施例1と比較して低かった。また、電界効果移動度は1×10-5cm2/Vsと算出され、実施例1と比較して低かった。
Claims (9)
- 下記一般式(1)で表される繰り返し単位、及び/又は、下記一般式(2)で表される繰り返し単位と、下記一般式(3)で表される繰り返し単位とを有する高分子化合物を含む有機半導体層を備える、有機薄膜トランジスタ。
[式(1)中、X1及びX2は同一又は異なり、カルコゲン原子を示し、R3、R4、R5及びR6は同一又は異なり、水素原子、アルキル基、アルコキシ基、アルキルチオ基、置換基を有していてもよいアリール基、アリールオキシ基、アリールチオ基、アリールアルキル基、アリールアルコキシ基、アリールアルキルチオ基、置換シリル基、置換カルボキシル基、置換基を有していてもよい1価の複素環基、シアノ基又はフッ素原子を示す。]
[式(2)中、X11及びX12は同一又は異なり、カルコゲン原子を示し、R13、R14、R15及びR16は同一又は異なり、水素原子、アルキ ル基、アルコキシ基、アルキルチオ基、置換基を有していてもよいアリール基、アリールオキシ基、アリールチオ基、アリールアルキル基、アリールアルコキシ基、アリールアルキルチオ基、置換シリル基、置換カルボキシル基、置換基を有していてもよい1価の複素環基、シアノ基又はフッ素原子を示す。]
[式(3)中、Yは置換基を有していてもよい3つ以上の芳香族環が縮合したアリーレン基、置換基を有していてもよい2価の複素環基、置換基を有していてもよい金属錯体構造を有する2価の基、又は、-C≡C-で表される基を示し、nは1~5の整数を示す。なお、Yが複数存在する場合、複数のYはそれぞれ同一でも異なっていてもよい。] - 前記一般式(1)におけるR3とR5、及び、R4とR6、並びに、前記一般式(2)におけるR13とR15、及び、R14とR16のうちの少なくとも一組が同種の基である、請求項1記載の有機薄膜トランジスタ。
- 前記一般式(1)におけるR3~R6が水素原子である、及び/又は、前記一般式(2)におけるR13~R16が水素原子である、請求項1記載の有機薄膜トランジスタ。
- 前記一般式(1)におけるX1、及び、X2、並びに、前記一般式(2)におけるX11、及び、X12のうちの少なくとも1つが硫黄原子である、請求項1~3のいずれか一項に記載の有機薄膜トランジスタ。
- 前記一般式(3)において、Yが置換基を有していてもよい2価の複素環基である、請求項1~4のいずれか一項に記載の有機薄膜トランジスタ。
- 前記一般式(4)におけるR20、R21、R22及びR23のうちの少なくとも1つが、炭素数6~20のアルキル基である、請求項6記載の有機薄膜トランジスタ。
- 請求項1~7のいずれか一項に記載の有機薄膜トランジスタを備える面状光源。
- 請求項1~7のいずれか一項に記載の有機薄膜トランジスタを備える表示装置。
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US13/375,724 US20120116037A1 (en) | 2009-06-03 | 2010-05-11 | Organic thin film transistor, surface light source and display device |
EP10783231.3A EP2439802A4 (en) | 2009-06-03 | 2010-05-11 | ORGANIC THIN FILM TRANSISTOR, SURFACE-EMITTING LIGHT SOURCE AND DISPLAY DEVICE |
CN2010800241510A CN102449798A (zh) | 2009-06-03 | 2010-05-11 | 有机薄膜晶体管、面状光源及显示装置 |
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- 2010-05-11 WO PCT/JP2010/057960 patent/WO2010140447A1/ja active Application Filing
- 2010-05-11 US US13/375,724 patent/US20120116037A1/en not_active Abandoned
- 2010-05-11 KR KR1020117031117A patent/KR20120039557A/ko not_active Application Discontinuation
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- 2010-05-11 EP EP10783231.3A patent/EP2439802A4/en not_active Withdrawn
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US20120116037A1 (en) | 2012-05-10 |
CN102449798A (zh) | 2012-05-09 |
JP2010283072A (ja) | 2010-12-16 |
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