JP5620256B2 - 高分子化合物、これを含む薄膜及びインク組成物 - Google Patents
高分子化合物、これを含む薄膜及びインク組成物 Download PDFInfo
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- JP5620256B2 JP5620256B2 JP2010286622A JP2010286622A JP5620256B2 JP 5620256 B2 JP5620256 B2 JP 5620256B2 JP 2010286622 A JP2010286622 A JP 2010286622A JP 2010286622 A JP2010286622 A JP 2010286622A JP 5620256 B2 JP5620256 B2 JP 5620256B2
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Description
[式(1)におけるX11及びX12並びに式(2)におけるX21及びX22は、それぞれ同一又は異なり、カルコゲン原子を示し、式(1)におけるR13、R14、R15及びR16は、それぞれ同一又は異なり、水素原子、アルキル基、アルコキシ基、アルキルチオ基、アリール基、アリールオキシ基、アリールチオ基、アリールアルキル基、アリールアルコキシ基、アリールアルキルチオ基、置換シリル基、非置換若しくは置換のカルボキシル基、置換基を有してもよい1価の複素環基、シアノ基又はフッ素原子を示し、式(2)におけるR23、R24、R25及びR26は、それぞれ同一又は異なり、水素原子、アルキル基、アルコキシ基、アルキルチオ基、アリールオキシ基、アリールチオ基、アリールアルキル基、アリールアルコキシ基、アリールアルキルチオ基、置換シリル基、非置換若しくは置換のカルボキシル基、置換基を有してもよい1価の複素環基、シアノ基又はフッ素原子を示す。]
[式中、Yは、アリーレン基、2価の複素環基、金属錯体構造を有する2価の基又はエチニレン基を示し、これらはそれぞれ置換基を有していてもよい。なお、Yが複数存在する場合、それらは同一でも異なっていてもよい。]
[式中、Tは、置換基を有していてもよい2価の複素環基を示し、nは、2〜8の整数を示す。なお、Tが複数存在する場合、それらは同一でも異なっていてもよい。]
[式中、Ar1及びAr2は、それぞれ同一又は異なり、置換基を有していてもよい芳香族炭化水素環、置換基を有していてもよい複素環、又は置換基を有していてもよい芳香族炭化水素環と置換基を有していてもよい複素環との縮合環である。R51及びR52は、それぞれ同一又は異なり、水素原子、アルキル基、アルコキシ基、アルキルチオ基、アリール基、アリールオキシ基、アリールチオ基、アリールアルキル基、アリールアルコキシ基、アリールアルキルチオ基、置換シリル基、非置換若しくは置換のカルボキシル基、置換基を有してもよい1価の複素環基、シアノ基又はフッ素原子を示す。]
本発明の高分子化合物は、上記の式(1)で表される繰り返し単位及び式(2)で表される繰り返し単位からなる群より選ばれる少なくとも1種の繰り返し単位を有するものである。高分子化合物は、繰り返し単位として、式(1)及び(2)で表される繰り返し単位のうちのいずれか1種類だけを有する単独共重合体であってもよく、繰り返し単位として、式(1)及び(2)のうちの複数種類、或いは式(1)及び(2)のうちの1種類とそれら以外の種類を組み合わせて有する共重合体であってもよい。
[式中、Tは、置換基を有していてもよい2価の複素環基を示し、nは、2〜8の整数を示す。複数存在するTは、それぞれ同一でも異なっていてもよい。]
[式中、R41、R42、R43及びR44は、それぞれ同一又は異なり、水素原子、アルキル基、アルコキシ基、アルキルチオ基、アリール基、アリールオキシ基、アリールアルキル基、アリールアルコキシ基、置換シリル基、非置換若しくは置換のカルボキシル基、1価の複素環基、シアノ基又はフッ素原子を示す。]
[式中、Ar1及びAr2は、それぞれ同一又は異なり、置換基を有していてもよい芳香族炭化水素環、置換基を有していてもよい複素環、又は置換基を有していてもよい芳香族炭化水素環と置換基を有していてもよい複素環との縮合環である。R51及びR52は、それぞれ同一又は異なり、水素原子、アルキル基、アルコキシ基、アルキルチオ基、アリール基、アリールオキシ基、アリールチオ基、アリールアルキル基、アリールアルコキシ基、アリールアルキルチオ基、置換シリル基、非置換若しくは置換のカルボキシル基、置換基を有してもよい1価の複素環基、シアノ基又はフッ素原子を示す。]
[式中、R53及びR54は、それぞれ同一又は異なり、水素原子、アルキル基、アルコキシ基、アルキルチオ基、アリール基、アリールオキシ基、アリールアルキル基、アリールアルコキシ基、置換シリル基、非置換若しくは置換のカルボキシル基、1価の複素環基、シアノ基又はフッ素原子を示す。]
次に、上述した高分子化合物の製造方法の好適な実施形態について説明する。
上述した本発明の高分子化合物は、他の成分を組み合わせて含む組成物として、発光材料や電荷輸送材料として用いることもできる。このような組成物としては、例えば、高分子化合物と、ホール輸送材料、電子輸送材料及び発光材料からなる群より選ばれる少なくとも1種類の材料とを含有するものが挙げられる。好適なホール輸送材料及び電子輸送材料としては、後述する薄膜の説明で例示するものを適用できる。
本発明の高分子化合物を含有するインク組成物は、高分子化合物と溶媒とを含有するものである。また、インク組成物は、上述したような高分子化合物を含有する組成物と溶媒とを含有するものであってもよい。このインク組成物は、主に溶液の状態であり、印刷法等により薄膜を形成するのに有用である。インク組成物に含まれる高分子化合物及び溶媒以外の成分としては、ホール輸送材料、電子輸送材料、発光材料、安定剤、増粘剤(粘度を高めるための高分子量の化合物や貧溶媒)、粘度を下げるための低分子量の化合物、界面活性剤(表面張力を下げるためのもの)、酸化防止剤等が挙げられる。
本発明の高分子化合物を含有する薄膜は、例えば、発光性薄膜、導電性薄膜、有機半導体薄膜として適用できる。
本発明の薄膜は、電荷の輸送性を有することから、電極から注入された電子若しくはホール、又は光吸収により発生した電荷を輸送制御することができ、有機トランジスタ、太陽電池モジュール、光センサー等種々の有機薄膜素子に用いることができる。なお、本発明の薄膜をこれらの有機薄膜素子に用いる場合は、上述した配向処理により配向させて用いることが、より高い電子輸送性又はホール輸送性が得られることから好ましい。以下、有機薄膜素子の好適な例について説明する。
まず、本発明の高分子化合物を含有する有機半導体層を備える有機トランジスタの好適な実施形態について説明する。
(面状光源及び表示装置)
本発明の高分子化合物は、光電変換素子用の有機半導体層に適用する材料としても有用である。光電変換素子の基本的形態としては、少なくとも一方が透明又は半透明である一対の電極と、電子供与性化合物(p型の有機半導体)と電子受容性化合物(n型の有機半導体等)との有機組成物から形成されるバルクへテロ型有機半導体層もしくはp/n積層型有機半導体層を有する形態が挙げられる。上述した本発明の高分子化合物は、電子供与性化合物及び電子受容性化合物のうちの少なくとも一方として、これらの有機半導体層中に含まれる。
光電変換素子は、通常、基板上に各層が形成された構成を有する。この基板1は、電極を形成でき、有機物の層を形成する際に化学的に変化しないものであればよい。基板1の材料としては、例えば、ガラス、プラスチック、高分子フィルム、シリコン等が挙げられる。不透明な基板1の場合には、反対の電極(即ち、基板から遠い方の電極)が透明又は半透明であることが好ましい。
電極(陽極7a及び陰極7b)のうち、少なくとも一方は、透明又は半透明の電極材料により構成される。透明又は半透明の電極材料としては、導電性の金属酸化物膜、半透明の金属薄膜等が挙げられる。具体的には、酸化インジウム、酸化亜鉛、酸化スズ、及びそれらの複合体であるインジウム・スズ・オキサイド(ITO)、インジウム・亜鉛・オキサイド(IZO)、NESA等の導電性材料を用いて作製された膜や、金、白金、銀、銅等が用いられる。なかでも、ITO、インジウム・亜鉛・オキサイド、酸化スズが好ましい。
光電変換素子300に含まれる有機半導体層2は、電子供与性化合物及び電子受容性化合物の少なくとも一方として、上述した本発明の高分子化合物を含む。なお、電子供与性化合物及び電子受容性化合物は、これらの化合物のHOMO又はLUMOのエネルギーレベルの値から相対的に決定されるものである。
光電変換素子300は、上述した基板1、電極(陽極7a及び7b)及び有機半導体層2のほかに、光電変換効率を向上させるために、有機半導体層2以外の付加的な中間層(バッファ層、電荷輸送層等)を使用してもよい。このような中間層は、例えば、陽極7aと有機半導体層2との間、或いは、陰極7bと有機半導体層2との間に形成することができる。
上述したような光電変換素子300は、透明又は半透明の電極(陽極7a又は陰極7b)の側から太陽光等の光を照射することにより、これらの電極間に光起電力を発生させ、有機薄膜太陽電池素子として動作させることができる。この有機薄膜太陽電池素子を複数集積することにより、太陽電池モジュールを構成することもできる。
本発明の光電変換素子を用いた有機薄膜太陽電池は、従来の太陽電池モジュールと基本的に同様のモジュール構造をとりうる。すなわち、太陽電池モジュールとしては、金属、セラミック等の支持基板の上にセル(例えば、上記実施形態の光電変換素子)が構成され、その上を充填樹脂や保護ガラス等で覆い、支持基板の反対側から光を取り込む構造を有するものが挙げられる。また、支持基板に強化ガラス等の透明材料を用い、その上にセルを構成することで、透明の支持基板側から光を取り込む構造とすることも可能である。
以下の実施例において、高分子化合物(重合体)の分子量は、島津製作所製GPC(商品名:LC−10Avp)(以下、「LC−10Avp」と言う。)又はGPCラボラトリー製GPC(商品名:PL−GPC2000)(以下、「PL−GPC2000」と言う。)により、ポリスチレン換算の数平均分子量を求めた。
(合成例1)
窒素雰囲気下、ナフト[2,3−b:6,7−b’]ジチオフェン(0.50g,2.08mmol)をテトラヒドロフラン(50ml)に溶解させ、−78℃に冷却した後、n−BuLiの1.59Mテトラヒドロフラン溶液(4ml,6.36mmol)を滴下した。得られた溶液を30分間還流下で撹拌した後、室温にて塩化トリメチルスズ(1.66g,8.34mmol)を加え、12時間撹拌した。
(高分子化合物P1の合成)
窒素雰囲気下、クロロベンゼン(8ml)を30分間脱気した。このクロロベンゼンに、Pd2(dba)3・CHCl3(2mg,0.002mmol,2mol%)、P(o−tolyl)3(3mg,0.008mmol,8mol%)、5,5’−ジブロモ−4,4’−ジヘキサデシルヘキシル−2,2’−ビチオフェン(77mg,0.1mmol)、及び合成例1で得られた化合物(21)(57mg,0.1mmol)を加え、3日間還流しながら撹拌した。なお、「dba」とは、ジベンジリデンアセトンを表す。
高分子化合物P1を用いて図9に示す有機トランジスタを作製し、そのトランジスタ特性を測定した。すなわち、まず、ゲート電極となる高濃度にドーピングされたn−型シリコン基板31の表面を熱酸化し、200nmのシリコン酸化膜32を形成した。この基板を十分に洗浄した後、ヘキサメチレンジシラザン(HMDS)を用いて、基板表面をシラン処理した。
(高分子化合物P2の合成)
フラスコに、4,4’−ジドデシル−5,5’−ビス(4,4,5,5−テトラメチル−1,3,5−ジオキサボロラン−2−イル)−2,2’−ビチオフェン(341mg,0.452mmol)、2,7−ジブロモ−4,5−ジヘプチルベンゾ[2,1−b:3,4−b’]ジチオフェン(246mg,0.452mmol)、トリス(ジベンジリデンアセトン)ジパラジウム(0)(8.3mg,0.009mmol)、トリ−tert−ブチルホスホニウムテトラフルオロボレート(10.5mg,0.036mmol)、及びテトラヒドロフラン(12mL)を入れ、フラスコ中の溶液を60℃に加熱した。
高分子化合物P2を用いて図9に示す有機トランジスタを作製し、そのトランジスタ特性を測定した。すなわち、まず、ゲート電極となる高濃度にドーピングされたn−型シリコン基板31の表面を熱酸化し、200nmのシリコン酸化膜32を形成した。この基板をアセトンで10分間超音波洗浄した後、オゾンUVを20分間照射した。その後、β−フェニチルトリクロロシラン(β−PTS)を用いて、スピンコート法により基板表面をシラン処理した。
(高分子化合物P3の合成)
窒素雰囲気下、クロロベンゼン(20ml)を加え30分間脱気した。Pd2(dba)3・CHCl3(4mg,0.004mmol,2mol%)、P(o−tolyl)3(5mg,0.016mmol,8mol%)、5,5’−ジブロモ−4,4’−ジイコシル−2,2’−ビチオフェン(177mg,0.2mmol)、化合物(21)(113mg,0.2mmol)を加え、3日間還流、撹拌した。反応溶液をメタノール(200ml)と塩酸(5ml)の混合溶液に注ぎ、3時間撹拌した。析出した沈殿物を濾取し、メタノール、ヘキサン、クロロホルムで加熱洗浄した後、クロロベンゼンで抽出した。クロロベンゼン溶液を濃縮し、この溶液をメタノールに流し込み、析出した沈殿物を濾取して、下記式P3で表される高分子化合物(高分子化合物P3)(31mg)を赤色の固体として得た。高分子化合物P3のポリスチレン換算の数平均分子量は4.4×104、重量平均分子量は7.7×104であった。この反応は、下記反応式で示される通りである。なお、式中、nは繰り返し単位数を示す。
高分子化合物P3を、高分子化合物P1に代えて用いたこと以外は、実施例1と同様にして有機トランジスタを作製した。
(合成例2)
ナフト[2,3−b・7,6−b’]ジチオフェンを、ナフト[2,3−b:6,7−b’]ジチオフェンに代えて用いたこと以外は、合成例1と同様にして、下記式(22)で表される化合物(化合物(22))を合成した。
(高分子化合物P4の合成)
窒素雰囲気下、クロロベンゼン(20ml)を加え30分間脱気した。Pd2(dba)3・CHCl3(4mg,0.004mmol,2mol%)、P(o−tolyl)3(5mg,0.016mmol,8mol%)、5,5’−ジブロモ−4,4’−ジヘキサデシル−2,2’−ビチオフェン(155mg,0.2mmol)、化合物(22)(113mg,0.2mmol)を加え、3日間還流、撹拌した。反応溶液をメタノール(200ml)と塩酸(5ml)の混合溶液に注ぎ、3時間撹拌した。析出した沈殿物を濾取し、メタノール、ヘキサン、クロロホルムで加熱洗浄した後、クロロベンゼンで抽出した。クロロベンゼン溶液を濃縮し、この溶液をメタノールに流し込み、析出した沈殿物を濾取して、下記式P4で表される高分子化合物(高分子化合物P4)(76mg)を橙色の固体として得た。高分子化合物P4のポリスチレン換算の数平均分子量は2.8×104、重量平均分子量は4.9×104であった。この反応は、下記反応式で示される通りである。なお、式中、nは繰り返し単位数を示す。
高分子化合物P4を、高分子化合物P1に代えて用いたこと以外は、実施例1と同様にして有機トランジスタを作製した。
(高分子化合物P5の合成)
窒素雰囲気下、クロロベンゼン(20ml)を加え30分間脱気した。Pd2(dba)3・CHCl3(4mg,0.004mmol,2mol%)、P(o−tolyl)3(5mg,0.016mmol,8mol%)、5,5’−ジブロモ−4,4’−ジイコシル−2,2’−ビチオフェン(177mg,0.2mmol)、化合物(22)(113mg,0.2mmol)を加え、3日間還流、撹拌した。反応溶液をメタノール(200ml)と塩酸(5ml)の混合溶液に注ぎ、3時間撹拌した。析出した沈殿物を濾取し、メタノール、ヘキサン、クロロホルムで加熱洗浄した後、クロロベンゼンで抽出した。クロロベンゼン溶液を濃縮し、この溶液をメタノールに流し込み、析出した沈殿物を濾取して、下記式P5で表される高分子化合物(高分子化合物P5)(5mg)を橙色の固体として得た。高分子化合物P5のポリスチレン換算の数平均分子量は4.7×104、重量平均分子量は9.4×104であった。この反応は、下記反応式で示される通りである。なお、式中、nは繰り返し単位数を示す。
高分子化合物P5を、高分子化合物P1に代えて用いたこと以外は、実施例1と同様にして有機トランジスタを作製した。
(高分子化合物P6の合成)
窒素雰囲気下、クロロベンゼン(20ml)を加え30分間脱気した。Pd2(dba)3・CHCl3(4mg,0.0036mmol,2mol%)、P(o−tolyl)3(5mg,0.0144mmol,8mol%)、下記式(8)で表される化合物(化合物(8))(204mg,0.18mmol)、下記式(21)で表される化合物(化合物(21))(102mg,0.18mmol)を加え、3日間還流、撹拌した。反応溶液をメタノール(200ml)と塩酸(5ml)の混合溶液に注ぎ、3時間撹拌した。析出した沈殿物を濾取し、メタノール、ヘキサンで加熱洗浄した後、クロロホルムで抽出した。クロロホルム溶液を濃縮し、この溶液をメタノールに流し込み、析出した沈殿物を濾取して、下記式P6で表される高分子化合物(高分子化合物P6)(106mg)を黒褐色の固体として得た。高分子化合物P6のポリスチレン換算の数平均分子量は1.5×104、重量平均分子量は2.4×104であった。この反応は、下記反応式で示される通りである。なお、式中、nは繰り返し単位数を示す。
高分子化合物P6を、高分子化合物P1に代えて用いたこと以外は、実施例1と同様にして有機トランジスタを作製した。
スパッタ法により115nmの厚みでITO膜を付けたガラス基板をオゾンUV処理して表面処理を行った。次に、高分子化合物P6及びフラーレン誘導体であるC60PCBM(phenyl C61-butyric acid methyl ester、フロンティアカーボン社製)を含むオルトジクロロベンゼン溶液(高分子化合物P6/C60PCBMの重量比=1/0.8)を用い、スピンコートにより塗布して光活性層を作製した(厚さ:約100nm)。その後、真空蒸着機によりフッ化リチウムを厚さ0.8nmで蒸着し、次いでAlを厚さ100nmで蒸着した。得られた有機薄膜太陽電池の形状は、直径2mmの円であった。得られた有機薄膜太陽電池にソーラーシミュレーター(朝日分光社製、商品名HAL302:AM1.5Gフィルター、放射照度100mW/cm2)を用いて一定の光を照射し、発生する電流と電圧を測定して、光電変換効率、短絡電流密度、開放電圧、フィルファクターを求めた。その結果、Jsc(短絡電流密度)=2.89mA/cm2、Voc(開放電圧)=0.80V、ff(フィルファクター)=0.56、光電変換効率(η)=1.3%であった。
(高分子化合物P7の合成)
窒素雰囲気下、クロロベンゼン(20ml)を加え30分間脱気した。Pd2(dba)3・CHCl3(4mg,0.004mmol,2mol%)、P(o−tolyl)3(5mg,0.016mmol,8mol%)、下記式(41)で表される化合物(化合物(41))(226mg,0.2mmol)、化合物(21)(113mg,0.2mmol)を加え、3日間還流、撹拌した。反応溶液をメタノール(200ml)と塩酸(5ml)の混合溶液に注ぎ、3時間撹拌した。析出した沈殿物を濾取し、メタノール、ヘキサンで加熱洗浄した後、クロロホルムで抽出した。クロロホルム溶液を濃縮し、この溶液をメタノールに流し込み、析出した沈殿物を濾取して、下記式P7で表される高分子化合物(高分子化合物P7)(224mg)を黒褐色の固体として得た。高分子化合物P7のポリスチレン換算の数平均分子量は1.9×104、重量平均分子量は6.7×104であった。この反応は、下記反応式で示される通りである。なお、式中、nは繰り返し単位数を示す。
高分子化合物P7を、高分子化合物P1に代えて用いたこと以外は、実施例1と同様にして有機トランジスタを作製した。
高分子化合物P7を、高分子化合物P6に代えて用い、且つ、高分子化合物P7/C60PCBM=1/1(重量比)とした以外は、実施例5と同様に有機薄膜太陽電池を作製し、その評価を行った。その結果、Jsc(短絡電流密度)=1.10mA/cm2、Voc(開放電圧)=0.66V、ff(フィルファクター)=0.22、光電変換効率(η)=0.16%であった。
(高分子化合物P10の合成)
四つ口フラスコに、下記式(38)で表される化合物(化合物(38))(642.0mg、1.000mmol)、下記式(39)で表される化合物(化合物(39))(336.4mg、0.950mmol)、及びテトラヒドロフラン(25mL)を入れ、室温(25℃)で30分間アルゴンバブリングを行った。その後、トリス(ジベンジリデンアセトン)パラジウム(9.15mg、0.01mmol)、[トリ(tert−ブチル)ホスホニウム]テトラフルオロボレート(11.60mg、0.04mmol)を加えた。80℃で攪拌しながら、27.6重量%の炭酸カリウム水溶液(1.50g、3.00mmol)を30分かけて滴下した。15分後、フェニルホウ酸(36.6mg、0.30mmol)を加え、さらに1時間攪拌した後、反応を停止した。なお、反応はアルゴン雰囲気下で行った。
高分子化合物P10を、高分子化合物P1に代えて用いた以外は、実施例1と同様にして有機トランジスタを作製した。
高分子化合物P10を、高分子化合物P6に代えて用い、且つ、高分子化合物P10/C60PCBM=1/3(重量比)とした以外は、実施例5と同様にして有機薄膜太陽電池を作製し、その評価を行った。その結果、Jsc(短絡電流密度)=1.62mA/cm2、Voc(開放電圧)=0.04V、ff(フィルファクター)=0.25、光電変換効率(η)=0.02%という結果が得られ、実施例5及び6と比較して低い特性となることが確認された。
Claims (15)
- 式(1)で表される繰り返し単位及び式(2)で表される繰り返し単位からなる群より選ばれる少なくとも1種の繰り返し単位と、式(4a)で表される繰り返し単位とを有する、高分子化合物。
[式(1)におけるX11及びX12並びに式(2)におけるX21及びX22は、硫黄原子を示し、式(1)におけるR13、R14、R15及びR16は、水素原子を示し、式(2)におけるR23、R24、R25及びR26は、水素原子を示す。]
[式(4a)におけるR 41 、R 42 、R 43 及びR 44 は、それぞれ同一又は異なり、水素原子又はアルキル基を示し、R 41 、R 42 、R 43 及びR 44 の少なくとも一つはアルキル基を示す。] - 前記Yが、炭素数4〜12の5員の2価の複素環基、炭素数6〜18の芳香族炭化水素基又は多環の2価の複素環基である、請求項2記載の高分子化合物。
- 前記Yが、式(5)で表される基である、請求項2記載の高分子化合物。
[式中、Ar1及びAr2は、それぞれ同一又は異なり、置換基を有していてもよい芳香族炭化水素環、置換基を有していてもよい複素環、又は置換基を有していてもよい芳香族炭化水素環と置換基を有していてもよい複素環との縮合環である。R51及びR52は、それぞれ同一又は異なり、水素原子、アルキル基、アルコキシ基、アルキルチオ基、アリール基、アリールオキシ基、アリールチオ基、アリールアルキル基、アリールアルコキシ基、アリールアルキルチオ基、置換シリル基、非置換若しくは置換のカルボキシル基、置換基を有してもよい1価の複素環基、シアノ基又はフッ素原子を示す。] - 密度汎関数としてB3LYP、基底関数として3−21G * 、プログラムとしてGaussian09 Rev.A02を使用した密度汎関数法により算出した、式(1)で表される繰り返し単位が有している最高被占軌道のエネルギーレベルの値及び式(2)で表される繰り返し単位が有している最高被占軌道のエネルギーレベルの値のうちの最も低い値と、前記芳香族基が有している最低空分子軌道のエネルギーレベルの値との差が、4.4eV以下である、請求項6記載の高分子化合物。
- 請求項1〜7のいずれか一項に記載の高分子化合物を含む薄膜。
- 請求項1〜7のいずれか一項に記載の高分子化合物と、溶媒と、を含有するインク組成物。
- 請求項8記載の薄膜からなる有機半導体層を備える、有機トランジスタ。
- 請求項10記載の有機トランジスタを備える、面状光源。
- 請求項10記載の有機トランジスタを備える、表示装置。
- 陽極と、陰極と、該陽極と該陰極との間に設けられる有機半導体層とを有し、
前記有機半導体層が、電子供与性化合物及び電子受容性化合物を含み、該電子供与性化合物及び該電子受容性化合物の少なくとも一方が、請求項1〜7のいずれか一項に記載の高分子化合物である、光電変換素子。 - 請求項13記載の光電変換素子を含む太陽電池モジュール。
- 請求項13記載の光電変換素子を含むイメージセンサー。
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