WO2010137625A1 - Target output device and extreme ultraviolet light source device - Google Patents

Abstract

Provided are a target output device that ejects droplets with a small diameter at high speed and an extreme ultraviolet light source device. The target output device comprises: a main body for housing a target material; a nozzle portion for outputting the target material; an electrode portion facing the nozzle portion; a voltage control unit for applying a predetermined voltage between the electrode portion and the target material and generating an electrostatic force for extracting the target material from the nozzle portion; a pressure control unit for applying a pressure to the target material; and an output control unit for controlling the signal output timings of a first timing signal at which the voltage is applied by the voltage control unit and a second timing signal at which the pressure is applied by the pressure control unit.

Description

Target output device and extreme ultraviolet light source device

The present invention relates to a target output device and an extreme ultraviolet light source device.

For example, a semiconductor chip is generated by reducing and projecting a mask on which a circuit pattern is drawn with light of a specific wavelength on a resist-coated wafer and repeating processes such as etching and thin film formation. With the miniaturization of semiconductor processes, light having a shorter wavelength is required.

Therefore, a semiconductor exposure technique using light with an extremely short wavelength of 13.5 nm (extreme ultraviolet light) and a reduction optical system has been studied. This technique is called EUVL (Extreme Ultra Violet Lithography), and uses extreme ultraviolet light for semiconductor exposure. Hereinafter, extreme ultraviolet light is referred to as EUV light.

A light source that generates EUV light is called an EUV light source. As an EUV light source, for example, LPP (Laser
Three types are known: a light source of Produced Plasma (Laser Generated Plasma), a light source of DPP (Discharge Produced Plasma), and a light source of SR (Synchrotron Radiation).

The LPP type light source is a light source that generates plasma by irradiating a target material with laser light and uses EUV light emitted from the plasma. The DPP type light source is a light source that uses plasma generated by discharge. The SR type light source is a light source that uses orbital radiation.

Among the above three types of light sources, the LPP type light source can increase the plasma density and can increase the solid angle of collection of EUV light as compared with other methods, so that high output EUV light can be obtained. Probability is high.

In the LPP type light source, for example, tin (Sn) is used as a target material. The EUV generation chamber of the LPP type light source includes a target supply device. The target supply device heats and melts tin and ejects it from a thin nozzle. Tin droplets can be generated by applying regular vibration to the ejected liquid tin (Patent Document 1). Such a method is called a continuous jet method.

When using the continuous jet method, the following conditions must be satisfied in order to stably generate droplets. The nozzle hole diameter is d, the droplet velocity is V, and the droplet generation frequency is f.

V
/ d / f = 3-8
Under the general conditions (hole diameter d: several tens of μm, speed V: several tens of m / S) in the LPP type EUV light source, the generation frequency f is several hundreds kHz. On the other hand, the repetition frequency of the laser light is several tens to 100 kHz. That is, in the continuous jet method, the frequency of droplet generation is often higher than the frequency of laser light. Although depending on the conditions, the difference in frequency is on the order of several to several tens of times, so that there is a problem that many droplets are wasted in the continuous jet method. That is, among the droplets, the laser beam is irradiated and contributes to the generation of EUV light in a fraction of 1 to several tenths, and the use efficiency of tin may be low.

Therefore, a technique has been proposed in which a target is ejected as necessary by deforming a wall near the nozzle at a predetermined timing using a magnetostrictive material (Patent Document 2). Furthermore, a technique is also known in which droplets are ejected by deforming capillaries using repulsive force generated when current is passed through parallel conductors (Patent Document 3). These technologies are called on-demand methods.

JP 2006-216801 A US Pat. No. 7,405,416 US Pat. No. 5,560,543

Overview

In the on-demand method, a droplet is generated by mechanically deforming the wall near the nozzle. Therefore, when generating a small-diameter droplet, the deformation amount of the wall near the nozzle may be reduced. . However, when the deformation amount of the wall near the nozzle is reduced, the speed of the droplet is reduced. When the speed of the droplets decreases, the distance between the droplets decreases.

When this is applied to an LPP type EUV light source, debris from the plasma generated by irradiating the preceding droplet with a laser adversely affects the subsequent droplet. That is, there is a high possibility that the debris generated from the preceding droplet collides with the subsequent droplet, and the trajectory of the subsequent droplet is disturbed. If the droplet cannot accurately reach the desired position where the driver laser light is irradiated, the generation efficiency of the EUV light is not constant, and it may be difficult to stably generate the EUV light.

In the on-demand method, in order to increase the droplet speed, the amount of mechanical deformation of the wall near the nozzle may be increased. However, while the speed increases, the droplet size also increases.

When this is applied to an LPP type EUV light source, since the droplet size is large, it can be expected that the volume of droplets that are scattered without being converted to plasma and become debris will increase. In other words, the amount of debris generated increases, and there is a high possibility that the EUV generation chamber will be contaminated early.

Therefore, in an embodiment of the present invention, a target output device and an extreme ultraviolet light source device are provided that can eject a droplet-shaped target having a relatively small size at a relatively high speed.

In one embodiment of the present invention, a main body portion that accommodates a target material, a nozzle portion that is connected to the main body portion and outputs the target material as a target, an electrode portion that is provided to face the nozzle portion, A voltage control unit that applies a predetermined voltage between the electrode unit and the target material to generate an electrostatic force for extracting the target material from the nozzle unit; a pressure control unit that applies a predetermined pressure to the target material; By controlling a first timing at which a predetermined voltage is applied between the target material and the electrode unit by the voltage control unit and a second timing at which a predetermined pressure is applied to the target material by the pressure control unit, the target from the nozzle unit is controlled. A target output device comprising: an output control unit for outputting

The output control unit can instruct the voltage control unit to specify a predetermined voltage value and a first time during which the predetermined voltage is applied, and to apply a predetermined pressure value and a predetermined pressure to the pressure control unit. 2 hours can be indicated.

The output control unit can determine the value of the predetermined voltage and the first time, and the value of the predetermined pressure and the second time based on the diameter dimension of the target and the generation frequency of the target.

The block diagram of the EUV light source device which concerns on 1st Example. The figure which expands and shows a target injection | emission part. The figure which expands and shows a nozzle part. The figure which shows the change of the dielectric breakdown voltage by the relationship between a gas pressure and the gap between electrodes. Explanatory drawing which shows the relationship between a pulse voltage and a pressure, and the change of a meniscus. The figure which shows the target injection part which concerns on 2nd Example. Explanatory drawing which shows the relationship between pulse voltage and pressure. Explanatory drawing which concerns on 3rd Example and shows the relationship between a pulse voltage and a pressure. The figure which concerns on 4th Example and shows a target injection | emission part. The block diagram of the EUV light source device which concerns on 5th Example. The figure which shows a target injection | emission part. The figure which shows the pulse voltage applied to an electrode part. The figure which shows the target injection part which concerns on 6th Example. Explanatory drawing which shows the relationship between pulse voltage and pressure. The figure which concerns on 7th Example and shows a target injection | emission part. The figure which concerns on 8th Example and shows a nozzle part. The block diagram of the EUV light source device which concerns on a 9th Example. The block diagram of the EUV light source device which concerns on 10th Example. The figure which shows the electrode structure of a position correction apparatus. The figure which shows distribution of the equipotential surface of the circular hole vicinity of an electrode. The figure which concerns on 11th Example and shows the electrode structure of a position correction apparatus. The figure which concerns on 12th Example and shows the electrode structure of a position correction apparatus. The figure which shows the electric potential and electric potential distribution of a block electrode. The perspective view which concerns on 13th Example and shows the electrode structure of a position correction apparatus. Sectional drawing of the block electrode of a doublet structure. The figure which shows the locus | trajectory of a droplet. The figure which shows the simulation result of the locus | trajectory of a droplet in case the block electrode of a doublet structure satisfy | fills imaging conditions. The figure which shows the simulation result similar to FIG. The figure which concerns on 14th Example and shows the electrode structure and droplet locus | trajectory of a position correction apparatus. The figure which shows the simulation result of the locus | trajectory of a droplet in case the block electrode of a triplet structure satisfy | fills imaging conditions. The figure which concerns on 15th Example and shows the structure of the magnet block of a position correction apparatus. The block diagram of the EUV light source device which concerns on 16th Example. The block diagram of the EUV light source device which shows a modification. The block diagram of the EUV light source device which concerns on 17th Example. Explanatory drawing which shows typically the relationship between a target injection | emission part, the electrode for extraction, and the electrode for acceleration. The figure which shows the electric potential distribution of each electrode. The block diagram of the EUV light source device which concerns on 18th Example. The block diagram of the EUV light source device which concerns on 19th Example. The figure which concerns on 19th Example and shows a target injection | emission part. The figure which concerns on 20th Example and shows a target injection | emission part. The figure which concerns on 21st Example and shows a target injection | emission part. The figure which concerns on 22nd Example and shows a target injection | emission part. The figure which concerns on 23rd Example and shows a target injection | emission part. The block diagram of the EUV light source device which concerns on 24th Example. The figure which showed the voltage change from a nozzle to the electrode for acceleration. The block diagram of the EUV light source device which concerns on 25th Example. The figure which shows the relationship between a voltage and a pressure. The block diagram of the EUV light source device which concerns on 26th Example. The block diagram of the EUV light source device which concerns on 27th Example. The figure which shows a control structure typically. The figure which shows a mode that a voltage is applied between a nozzle part and an electrode. The figure which shows a mode that a droplet-shaped target is discretely output by applying a voltage and a pressure to a target material. The figure which shows the relationship between a voltage, a pressure, and a target based on 28th Example. The other figure which shows the relationship between a voltage, a pressure, and a target. FIG. 6 is still another diagram showing the relationship among voltage, pressure, and target. The figure which shows the voltage application method of the EUV light source device which concerns on 29th Example. The figure which shows the relationship between a voltage, a pressure, and a target. The figure which shows the other relationship of a voltage, a pressure, and a target. The time chart of the EUV light source device which concerns on 30th Example. The time chart of the EUV light source device which concerns on 31st Example.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the present embodiment, as described below, a droplet-like target (hereinafter referred to as a droplet) is generated using electrostatic force and pressure. In the present embodiment, a droplet having a smaller size can be generated at a higher speed by a synergistic effect of the pressure applied to the target substance as the “target material” and the suction force based on the electrostatic force (hereinafter, electrostatic attraction). I can do it.

The first embodiment will be described with reference to FIGS. FIG. 1 is an explanatory diagram showing the overall configuration of the EUV light source apparatus 1. The EUV light source device 1 includes, for example, a chamber 100 and a driver laser light source 110. The chamber 100 also includes a target supply device 1000, an EUV collector mirror 130, an exhaust pump 140, partition apertures 150 and 151, a gate valve 160, and an EUV light source controller 300. A target supply device 1000 as a “target output device” includes a target injection unit 120, a droplet controller 310, a pulse control unit 320, and a pressure control unit 330. Each of the above configurations 1, 100, 110, 120, 130, 140, 150, 151, 160, 300, 310, 320, 330, 1000 is provided one by one, and is described in a singular form. In the following description, it is basically described in the singular form. The droplet 201 may be described in a plural form. Therefore, in this embodiment, Droplet (s) may be displayed.

The chamber 100 is configured by connecting a first chamber 101 having a large volume and a second chamber 102 having a small volume. The first chamber 101 is a main chamber for generating plasma and the like. The second chamber 102 is a connection chamber for supplying EUV light emitted from plasma to an exposure apparatus (not shown).

The exhaust pump 140 is connected to the first chamber 101. Thereby, the inside of the chamber 100 is kept in a low pressure state. Note that another exhaust pump may be provided in the second chamber 102. In that case, it is preferable that the pressure in the first chamber 101 is made lower than the pressure in the second chamber 102 to suppress debris from flowing into the exposure apparatus.

The target injection unit 120 is a device that injects a droplet 201 formed from a target material 200 such as tin (Sn) into the chamber 100, for example. The main body 121 of the target injection unit 120 contains the molten target material 200, and a predetermined pressure is applied to the main body 121. The main body 121 is grounded via the chamber 100 or the like. Furthermore, an electrode part 123 is provided on the nozzle tip side of the target injection part 120. When a predetermined pulse voltage is applied to the electrode part 123, an electric field is applied to the target material 200. As a result, the droplet 201 is injected from the target injection unit 120 into the chamber 100. The detailed configuration of the target injection unit 120 will be described later with reference to FIG.

The driver laser light source 110 outputs a pulse laser L1 for converting the droplet 201 into plasma. The driver laser light source 110 is configured as, for example, a CO2 (carbon dioxide gas) pulse laser light source. The driver laser light source 110 emits laser light L1 having specifications of, for example, a wavelength of 10.6 μm, an output of 20 kW, a pulse repetition frequency of 30 to 100 kHz, and a pulse width of 20 nsec. The specification of the driver laser light source 110 is not limited to the above example. Furthermore, a configuration using a light source other than the CO2 pulse laser may be used.

The laser beam L1 for excitation output from the driver laser light source 110 enters the first chamber 101 via the condenser lens 111 and the incident window 112. The laser light L1 incident in the first chamber 101 passes through the incident hole 131 provided in the EUV collector mirror 130 and irradiates the droplet 201.

When the laser beam L 1 is condensed and irradiated on the droplet 201, the tin droplet 201 generates plasma at the plasma generation point 202. Hereinafter, for convenience, it is simply referred to as plasma. The plasma emits EUV light L2 having a center wavelength of 13.5 nm.

EUV light L2 emitted from the plasma is incident on the EUV collector mirror 130 and reflected by the EUV collector mirror 130. The EUV collector mirror 130 has a reflective surface formed of a spheroid, but is not limited to this as long as it can collect light. The EUV light L <b> 2 reflected by the EUV collector mirror 130 is collected at an intermediate condensing point (IF: Intermediate Focus) in the second chamber 102. The EUV light L2 condensed on the IF is guided to the exposure apparatus through the gate valve 160 in the open state.

In this embodiment, as will be described later, an amount of droplets 201 necessary for EUV light generation is generated in correspondence with the laser light generation period of the driver laser light source 110. Therefore, the amount of debris generated is small. However, in order to reduce the adverse effects due to debris, for example, in FIG. 1, two magnetic field generating coils (not shown) may be provided such that the optical path of the EUV light L2 is sandwiched from above or below or perpendicular to the paper surface. . Ionic debris can be captured by the lines of magnetic force formed by each magnetic field generating coil.

, Two partition wall apertures 150 and 151 may be arranged before and after the IF. When the traveling direction of the EUV light L2 reflected by the EUV collector mirror 130 is used as a reference, a first partition aperture 150 may be provided on the front side of the IF. A second partition aperture 151 may be provided on the rear side of the IF. Each of the partition apertures 150 and 151 may have an opening of about several mm to 10 mm, for example.

The first partition aperture 150 may be provided in the vicinity of a position where the first chamber 101 and the second chamber 102 are connected. The second partition aperture 151 may be provided in the vicinity of a position where the second chamber 102 and the exposure apparatus are connected.

In other words, the IF may be set so as to be located in the second chamber 102 different from the first chamber 101. The partition apertures 150 and 151 are preferably arranged so as to partition the front and rear of the IF. Note that SPF (Spectal Purity Filter) may be provided before or after the IF to block light with a wavelength other than 13.5 nm.

The control configurations 300 to 330 of the EUV light source apparatus 1 will be described. The EUV light source controller 300 controls the operation of the EUV light source device 1. The EUV light source controller 300 gives instructions to the droplet controller 310 and the driver laser light source 110. According to the instruction, the droplet 201 is ejected at a predetermined timing. The ejected droplet 201 is irradiated with pulsed laser light L1. Further, the EUV light source controller 300 controls operations of the exhaust pump 140, the gate valve 160, and the like.

The droplet controller 310 controls the operation of the target injection unit 120. A pulse controller 320 and a pressure controller 330 are connected to the droplet controller 310.

The pulse control unit 320 is a device for applying a predetermined pulse voltage to the electrode unit 123 provided on the front end side of the target injection unit 120. The pulse controller 320 includes, for example, one high-voltage DC power supply device, one switching driver that outputs a DC high voltage input from the high-voltage DC power supply device as a pulse, and one pulse input to the switching driver. A pulse generator may be included (both not shown).

The pressure control unit 330 is a device for applying a predetermined pressure to the main body 121 of the target injection unit 120. The inside of the main body 121 is pressurized to a predetermined pressure by an inert gas (for example, argon gas) supplied from the pressure controller 330.

FIG. 2 is a diagram illustrating the configuration of the target injection unit 120 and the pressure control unit 330. First, the configuration of the target injection unit 120 will be described. The target injection unit 120 includes, for example, one main body unit 121, one nozzle unit 122, one electrode unit 123, one insulating unit 124, and one heating unit 125.

The main body 121 accommodates the target material 200. The main body 121 is attached to the chamber 100 such that a front end portion (lower side in FIG. 2) 121 A protrudes into the first chamber 101. In the main body 121, an accommodating portion 121B for accommodating the target material 200 is provided. An injection flow path 121C is provided in the distal end 121A.

The accommodating part 121B is connected to the pressure control part 330 via the piping 126 connected to the base end side (upper side in FIG. 2) of the main body part 121. The injection flow path part 121 </ b> C communicates between the inside of the accommodating part 121 </ b> B and the nozzle part 122. The pressure from the pressure control unit 330 is supplied to the housing unit 121 </ b> B of the main body unit 121 through the pipe 126.

Furthermore, a heating unit 125 is provided on the outer surface side of the main body 121. The heating unit 125 may be configured as an electric heater, for example. The heating unit 125 heats so that the tin in the main body unit 121 has a temperature of about 300 ° C. The value of 300 ° C. is an example, and the present invention is not limited to that value. That is, the temperature may be any temperature at which the target material 200 is a liquid.

FIG. 3 shows the vicinity of the nozzle portion 122 in an enlarged manner. The nozzle part 122 is formed in a disk shape, for example, and a circular injection hole 122A may be formed at the center thereof. The injection hole 122A and the housing part 121B of the main body part 121 communicate with each other. Further, a downwardly conical nozzle 122B may be integrally provided on the lower end side of the injection hole 122A so as to protrude toward the first chamber 101. There is a high possibility that the generation range of the droplet volume to be formed later can be limited by the opening diameter of the nozzle 122B. The reason why the nozzle 122B protrudes into the first chamber 101 is to concentrate the electric field on the target material at the tip of the nozzle 122B.

The material of the nozzle part 122 will be described. First, the nozzle portion 122 is preferably made of a material that is not easily eroded by tin because it contacts tin as a target material. In this specification, the property of being hard to be eroded by tin is referred to as erosion resistance for tin. Examples of the erosion-resistant material for tin include molybdenum (Mo), tungsten (W), tantalum (Ta), titanium (Ti), stainless steel, diamond, ceramics, and the like.

Second, from the viewpoint of concentrating the electric field on the target material 200 in the nozzle portion 122, the nozzle portion 122 preferably has electrical insulation. Among the above-mentioned materials having erosion resistance with respect to tin, diamond or ceramics is known as an insulating material. Therefore, the nozzle part 122 is preferably composed of diamond or ceramics. However, nozzle portions formed from materials other than diamond or ceramics are also included in the scope of the present invention.

The main body 121 desirably has erosion resistance with respect to tin. Of the entire main body 121, the portion that comes into contact with the tin should have erosion resistance with respect to tin. Furthermore, in order to ground the main body 121, the main body 121 is preferably conductive. Therefore, the main body 121 may be made of molybdenum, tungsten, tantalum, titanium, stainless steel, or the like.

The disk-shaped electrode part 123 is preferably provided separately on the discharge side of the nozzle part 122. It is desirable that the injection hole 123A of the electrode portion 123 and the nozzle 122B are positioned coaxially. A predetermined gap d is formed between the injection hole 123A and the tip of the nozzle 122B. How the gap d is set will be described later with reference to FIG.

The material of the electrode part 123 will be described. First, since the electrode part 123 may come into contact with tin, it is desirable that the electrode part 123 has corrosion resistance with respect to tin. Second, it is desirable that the electrode portion 123 has a strong property against sputtering. This is because high-speed tin particles from the plasma 202 collide with the surface of the electrode portion 123. Thirdly, the electrode part 123 should have electrical conductivity. Considering the above three conditions, the electrode portion 123 is preferably formed from, for example, molybdenum, tungsten, tantalum, titanium, stainless steel, or the like.

The insulating part 124 may be provided between the nozzle part 122 and the electrode part 123. The insulating portion 124 is preferably provided with a nozzle mounting portion 124A and an electrode mounting portion 124B integrally. A space portion 124 </ b> C may be formed on the inner peripheral side of the insulating portion 124. The nozzle 122B may be provided so as to protrude into the space 124C.

The nozzle mounting portion 124A may be formed as an annular stepped portion, for example. The nozzle portion 122 is attached to the nozzle attachment portion 124A. The electrode attachment portion 124B may be formed as an annular step portion, for example. The electrode part 123 is attached to the electrode attachment part 124B.

The nozzle mounting portion 124A and the electrode mounting portion 124B are desirably provided so as to be positioned coaxially. The nozzle attachment portion 124A may determine the position of the nozzle portion 122, and the electrode attachment portion 124B may determine the position of the electrode portion 123. Thereby, the nozzles 122B of the nozzle part 122 and the injection holes 123A of the electrode part 123 may have the same center axis.

The insulating part 124 may realize an insulating function and a heat transfer function in addition to the positioning function described above. The insulating function is a function of electrically insulating the nozzle part 122 and the electrode part 123. The heat transfer function is a function for guiding the heat generated in the heating unit 125 to the electrode unit 123. Thereby, the temperature of the nozzle part 122 and the electrode part 123 must be made higher than the melting point of tin, and it must be possible to prevent tin from adhering to the nozzle part 122 and the electrode part 123.

The material of the insulating part 124 will be described. Considering the insulating function and heat transfer function of the insulating part 124, the insulating part 124 is preferably made of a material having high insulating properties and thermal conductivity. Accordingly, the insulating portion 124 is made of a material such as aluminum nitride (AlN) or diamond, for example.

FIG. 4 is an explanatory diagram showing Paschen's law. 4 indicates the product pd of the pressure p (Pa) in the space 124C and the gap d (m), and the vertical axis in FIG. 4 indicates the spark voltage Vs (V). When the number of gas molecules in the space portion 124C decreases, the chance of collision between electrons and gas molecules decreases, so that discharge is less likely to occur. On the other hand, when the number of gas molecules in the space 124C increases, the speed of electrons cannot be increased, so that it is difficult for discharge to occur. Therefore, as shown in FIG. 4, when the product of the pressure and the gap d reaches a predetermined value, discharge is most likely to occur. When discharge occurs, the voltage between the nozzle part 122 and the electrode part 123 cannot be maintained. As in this embodiment, the pressure p and the dimension of the gap d in the first chamber 101 may be set so as to obtain a dielectric breakdown voltage of 10 kV / mm or more so as to maintain the voltage.

In particular, since the pressure p of the chamber used for the EUV light source is in a low pressure state (about 10 ⁻³ Pa), the value of pd becomes small, and a high voltage can be applied even with a small gap d. Moreover, even if it is not a low voltage | pressure state, the area | region which can suppress an ignition voltage should just be selected by making the value of pd small. By applying a voltage, a droplet may be formed by applying a force by electrostatic attraction to the nozzle portion.

Referring back to FIG. 2, the configuration of the pressure control unit 330 will be described. The pressure control unit 330 may include, for example, one pressure controller 331, one pressure adjustment valve 332, one exhaust pump 333, one supply valve 334, and one exhaust valve 335. The pressure control unit 330 may supply the gas from one gas supply unit 336 into the main body 121 of the target injection unit 120 via the pressure adjustment valve 332 or the like. In this embodiment, argon gas is used as a gas for pressurizing the target material 200. However, an inert gas other than argon gas can also be used.

The pressure adjustment valve 332 may adjust the pressure of the gas flowing in from the gas supply unit 336 to a predetermined value set by the pressure controller 331 and send it out into the pipe 126. The gas adjusted to a predetermined pressure will be supplied into the main body 121 via a supply valve 334 provided in the middle of the pipe 126.

The exhaust pump 333 may be a pump for discharging the gas in the main body 121. The exhaust pump 333 may be operated with the supply valve 334 closed and the discharge valve 335 provided in the middle of the exhaust passage 126A opened. Thereby, the gas in the main-body part 121 will be discharged | emitted.

FIG. 5 shows the relationship between the pressure applied to the target material 200 in the main body 121 and the pulse voltage applied to the electrode 123. As shown in FIG. 5A, a constant pressure P1 is applied to the target material 200. A pulse of the voltage V1 is input to the electrode unit 123 at a predetermined cycle. The predetermined period may be set to coincide with the period of the laser light L1 output from the driver laser light source 110. The pulse of the voltage V1 may be a rectangular wave, a triangular wave, or a sine wave as necessary.

FIG. 5 (2) schematically shows the state of the nozzle 122B. This will be described with reference to FIG. In the initial state (Sa), the target material 200 in the main body 121 is not pressurized with gas, and the pulse voltage is not applied to the electrode 123. In the initial state (Sa), the liquid surface 200A at the nozzle tip is often substantially flat.

In a state (Sb) in which the target material 200 is pressurized with gas and no pulse voltage is applied to the electrode part 123 (Sb), the liquid level 200A1 may protrude slightly from the nozzle tip due to the gas pressure. That is, a meniscus protruding downward is formed. The volume of the meniscus protrusion formed at this time is likely to be limited by the opening diameter and pressure of the nozzle 122B. In other words, it is possible to change the volume of the droplet formed later by appropriately selecting the opening diameter of the nozzle 122B.

In a state where the target material 200 is pressurized with a gas and a pulse voltage is applied to the electrode part 123 (Sc), the meniscus protruding downward is separated from the nozzle tip by electrostatic suction and ejected as a droplet 201. It will be. At this time, the electrostatic attractive force can be adjusted by the pulse voltage value. That is, the volume of the droplet ejected can be controlled by the pulse voltage value. Note that the state Sb can be referred to as a ready state where the preparation for injection is complete. State Sc can be referred to as an injection state.

According to this embodiment configured as described above, by applying a pulse voltage to the electrode part 123 provided to face the nozzle 122B in a state where the target material 200 in the main body part 121 is pressurized with gas, The droplet 201 can be ejected from the nozzle 122B. Therefore, in the present embodiment, a droplet 201 having a necessary size can be generated at a necessary timing. Furthermore, since the droplet 201 extracted by electrostatic attraction is charged, it can be accelerated by an electric field.

In this embodiment, an electrostatic attraction force is generated in a state where the target material 200 has been previously pressurized. Accordingly, a droplet 201 having a relatively small size (for example, a diameter of 10 to 30 μm) can be ejected at a relatively high speed. Therefore, it is highly possible that the target material 200 can be consumed efficiently and the operating cost of the extreme ultraviolet light source device 1 can be reduced.

In the present embodiment, the generation cycle of the droplet 201 can be controlled by the cycle of the pulse voltage. Therefore, in the present embodiment, the generation cycle of the droplet 201 can be matched with the cycle of the driver laser beam L1. This is expected to prevent generation of useless droplets. Thereby, the utilization efficiency of tin may become high.

In this embodiment, a high-speed droplet 201 is obtained. Therefore, the distance between the droplets 201 can be set to a value that is not affected by debris from plasma generated by irradiating the previously irradiated droplet 201 with a laser.

In the present embodiment, there is a possibility that the high-speed droplet 201 can be accurately sent out toward a desired position where the laser beam L1 is irradiated.

In this embodiment, the main body 121 is grounded and set to the ground voltage, and a positive or negative pulse voltage is applied to the electrode 123 facing the nozzle 122B. That is, in the present embodiment, the side on which the droplet 201 is discharged is grounded, and the peripheral portion of the discharged droplet 201 is charged either positively or negatively.

In this embodiment, the main body 121 can be easily grounded by electrically connecting the main body 121 to the chamber 100. Only the electrode part 123 may be electrically insulated. Therefore, the configuration of the EUV light source device 1 can be simplified.

On the contrary, in the case where the main body 121 is provided with an electrode and set to either positive or negative voltage and the electrode 123 facing the tip of the nozzle is grounded, the target injection unit 120 and the chamber 100 In addition, it is necessary to cover with an insulating material so that the outside of the target injection unit 120 does not touch the human body or the like. This complicates the configuration. However, as shown in an example described later, a configuration in which a high voltage pulse is applied to the main body portion 121 and the electrode portion 123 is grounded can obtain a faster droplet 201.

The EUV light source device 1 of the present embodiment is a relatively large device and has a high voltage value to be handled. Therefore, as described above, the main body 121 side is grounded and the electrode 123 is either positive or negative. It is easier to secure safety against electric shock or the like by applying the pulse voltage.

Hereinafter, the second embodiment will be described with reference to FIGS. Each embodiment described below corresponds to a modification of the first embodiment. Therefore, the difference from the first embodiment will be mainly described. The pressure applied to the target material 200 may be changed in a pulse shape. In the present embodiment, the pressure of the target material 200 is changed in a pulse shape while the bias pressure P2 is applied to the target material 200. Further, a pulse voltage is applied to the electrode portion 123 while applying a bias voltage.

FIG. 6 shows a target injection unit 120A according to this embodiment. In this embodiment, the piezoelectric element 400 that is mechanically deformed by the input pulse voltage may be provided at the distal end portion 121 </ b> A of the main body portion 121.

A mounting groove 121D is provided in a part of the tip 121A. The piezo element 400 is attached to the attachment groove 121D. The piezo element 400 is deformed according to the pulse voltage input from the second pulse control unit 340. The second pulse control unit 340 is a device for controlling the piezo element 400 and operates according to an instruction from the droplet controller 310. When the piezo element 400 is mechanically deformed, the volume of the injection flow path part 121C decreases, and the pressure of the target material 200 inside the tip part 121A increases.

An orifice 401 may be provided at the boundary between the housing part 121B and the injection flow path part 121C. The orifice 401 will prevent the pressure in the tip 121A from escaping to the receiving part 121B.

FIG. 7 shows the relationship between the pressure applied to the target material 200 in the main body part 121 and the voltage applied to the electrode part 123. The value of the pressure supplied from the pressure controller 330 to the main body 121 may be set to P2. For example, in this embodiment, the pressure supplied to the main body 121 is set to a value P2 smaller than P1 of the first embodiment (P2 <P1).

When the piezo element 400 is deformed at a predetermined cycle under a state in which the pressure P2 is applied to the target material 200 in the main body 121, the pressure of the target material 200 in the tip 121A is pulsated between P2 and P1. Change.

This embodiment configured in this way will also have the same effects as the first embodiment. Furthermore, in this embodiment, the pressure control unit 330 pressurizes the target material 200 to P2 in advance, and operates the piezo element 400 according to the period of the driver laser light L1. Thereby, in a present Example, the pressure of the target material 200 is changed from P2 to P1. Therefore, at the time of generating the droplet, it is only necessary to change the pressure by the difference ΔP (= P1−P2) between P1 and P2.

Furthermore, in this embodiment, a bias voltage V2 is applied in advance to the electrode portion 123, and a pulse voltage is applied according to the period of the driver laser light L1. By changing the voltage of the electrode part 123 from V2 to V1, an electrostatic attraction force capable of extracting the target material 200 from the nozzle 122B is generated.

Here, as shown in FIG. 7, the rise when the voltage changes from V2 to V1 may be delayed by a time Δt1 from the rise when the pressure rises from P2 to P1. Note that the voltage fall may be set at the same timing as the pressure fall. Each state Sa, Sb, Sc shown in FIG. 7 corresponds to the meniscus change in FIG.

In the present embodiment, a pressure and an electrostatic attraction force that do not generate the droplet 201 are generated in advance, and a predetermined pressure value and voltage value required for generating the droplet 201 in accordance with the period of the driver laser light L1. Increase to. Therefore, the response time required for generating the droplet 201 can be made shorter than that in the first embodiment. Thereby, even when the period of the driver laser beam L1 is shortened (even when the repetition rate is high), it is possible to cope with the short period (high repetition rate).

A third embodiment will be described with reference to FIG. The third embodiment is based on the configuration of the second embodiment. FIG. 8 shows the relationship between the pressure applied to the target material 200 in the main body part 121 and the voltage applied to the electrode part 123. The voltage may be changed from V2 to V1 first, and the pressure may be changed from P2 to P1 after a slight time delay Δt2.

In this embodiment, the rise when the pressure changes from P2 to P1 is delayed by a time Δt2 from the rise when the voltage changes from V2 to V1. Configuring this embodiment like this will also have the same effects as the second embodiment.

A fourth embodiment will be described with reference to FIG. In the present embodiment, similarly to the second and third embodiments, the piezo element 400A may be deformed to generate a pulsed pressure under a state in which a bias pressure is applied to the target material 200 in the main body 121. . Furthermore, in this embodiment, a pulse voltage is applied in a state where a bias voltage is applied to the electrode portion 123, as in the second and third embodiments.

FIG. 9 shows a target injection unit 120B according to this embodiment. In the accommodating portion 121B, an orifice plate 401A and a piezo element 400A may be provided near the distal end portion 121A.

The orifice plate 401A, like the orifice 401 described in the second embodiment, will hold the pressure lower than the orifice plate 401A (pressure on the tip 121A side) with delayed propagation.

The piezo element 400A is deformed according to the pulse voltage input from the second pulse control unit 340A in the same manner as the piezo element 400 described in the second embodiment. The piezo element 400A may be provided on the lower surface side of the orifice plate 401A.

In this embodiment, the pressure and voltage are controlled by the method shown in either FIG. 7 or FIG. 8, so that the high-speed and small-sized droplet 201 will be injected from the target injection unit 120B.

A fifth embodiment will be described with reference to FIGS. In this embodiment, the droplet 201 is generated by electrostatic attraction. In other words, in this embodiment, it is not necessary to apply additional pressure (P1 or P2) to the target material 200 in the main body 121.

FIG. 10 is an overall view of the EUV light source apparatus 1A according to the present embodiment. FIG. 11 is an enlarged view of the target injection unit 120C according to the present embodiment. Unlike the first to fourth embodiments, the EUV light source apparatus 1A of the present embodiment does not include the pressure control unit 330. The target supply device 1000A includes a target injection unit 120C, a droplet controller 310, and a pulse control unit 320.

As shown in FIG. 11, an electrode part 123 may be provided in the target injection part 120C of the present embodiment. A pipe 126 for supplying argon gas is not connected to the main body 121.

FIG. 12 shows the pulse voltage applied to the electrode part 123. In this embodiment, since no pressure is applied to the target material 200, the pulse voltage value V3 is set higher than the voltage value V1 described in the first embodiment (V3> V1). Since the electrostatic attraction force (pressure) is proportional to the square of the voltage V, this embodiment will generate a stronger electrostatic attraction force than that described in the first to fourth embodiments.

This embodiment configured in this way will also have the same effects as the first embodiment. Further, in this embodiment, the droplet 201 can be generated by ejecting the target material 200 from the nozzle 122B only by the electrostatic attraction force.

In the present embodiment, since it is not necessary to provide a mechanism for pressurizing the target material 200 in the main body 121, the configuration of the target supply device 1000A can be simplified. Therefore, manufacturing cost and operation cost can be reduced.

A sixth embodiment will be described with reference to FIGS. In this embodiment, the pulse voltage applied to the electrode unit 123 and the pulsed pressure to the target material 200 may be synchronized. FIG. 13 shows a target injection unit 120D according to this embodiment. The target injection unit 120D of the present embodiment may be configured in substantially the same manner as the target injection unit 120A shown in FIG. 6 except that a structure related to gas supply is not provided.

In the present embodiment, the pressure control unit 330 for applying a constant pressure to the target material 200 in the main body 121 may not be provided. The target supply apparatus 1000 according to the present embodiment may include a target injection unit 120D, a droplet controller 310, a pulse control unit 320, and a second pulse control unit 340.

FIG. 14 shows a change in pressure of the target material 200 and a change in pulse voltage applied to the electrode part 123. The piezo element 400 is mechanically deformed by a pulse voltage (also referred to as a second pulse voltage) input from the second pulse control unit 340. Due to the deformation, the pressure of the target material 200 in the tip 121A will change in a pulse shape. In this embodiment, the rise of the pulse voltage may be delayed from the rise of the pressure. On the contrary, the pressure rise may be delayed from the pulse voltage rise.

According to the present embodiment, the droplet 201 is generated by changing the pressure and voltage in a pulsed manner in accordance with the output period of the driver laser beam L1. This embodiment configured as described above will achieve the same effects as the first embodiment. Further, in this embodiment, since it is not necessary to provide the pressure control unit 330, the manufacturing cost and the operation cost can be reduced as compared with the second to fourth embodiments.

A seventh embodiment will be described with reference to FIG. The target injection unit 120E of the present embodiment may be configured in substantially the same manner as the target injection unit 120B shown in FIG. 9 except that it does not have a structure related to gas supply.

In the present embodiment, as described in the sixth embodiment, the droplet 201 can be generated by changing the pressure and voltage in a pulsed manner in accordance with the output period of the driver laser beam L1. The target supply apparatus 1000 of the present embodiment includes a target injection unit 120E, a droplet controller 310, a pulse control unit 320, and a second pulse control unit 340A, and does not need to include the pressure control unit 330.

In the present example configured as described above, as described in FIG. 14, a pulsed pressure is applied to the target material 200 in the tip 121 </ b> A in accordance with the output period of the driver laser light L <b> 1. A pulse voltage is applied to the electrode part 123. Therefore, this embodiment will have the same effect as the sixth embodiment.

The eighth embodiment will be described with reference to FIG. In this embodiment, a new nozzle unit 500 is proposed. FIG. 16 shows the nozzle unit 500 and the like. FIG. 16 (1) is a plan view of the nozzle unit 500. FIG. 16 (2) is a cross-sectional view of a state in which the insulating part 124 and the electrode part 123 are attached to the nozzle part 500.

In the mounting hole 501 formed in the center of the nozzle unit 500, a wire 510 having a conical shape with a sharp tip may be fixed using fixing means such as welding. A plurality of (for example, three) injection holes 502 may be provided on the outer peripheral side of the mounting hole 501 so as to be separated in the circumferential direction. These injection holes 502 may communicate with the inside of the tip 121A. Alternatively, the entire outer periphery of the wire 510 may be the injection hole 502.

In this embodiment, the target material 200 in a molten state will ooze out from each injection hole 502 along the surface of the wire 510 having a sharp tip. The leached target material 200 will remain attached to the surface of the wire 510 due to surface tension. When a pulse voltage is applied to the electrode portion 123, the target material 200 that has oozed out from each injection hole 502 gathers at the tip of the wire 510 and jumps out of the tip of the wire 510 to become a droplet 201. Configuring this embodiment like this will also have the same effects as the first to seventh embodiments.

A ninth embodiment will be described with reference to FIG. In the present embodiment, configurations 600, 610, and 113 related to the pre-pulse laser beam for expanding the droplet 201 before the driver laser beam L1 is irradiated may be provided.

FIG. 17 shows an EUV light source apparatus 1B according to this embodiment. The pre-pulse laser light source 600 for expanding the small-diameter droplet may be a device that outputs the pulse laser beam L3. The prepulse laser light L3 may enter the first chamber 101 through the concave mirror 610 and the prepulse laser light incident window 113, for example.

The pre-pulse laser beam L3 incident on the first chamber 101 should be irradiated to the droplet 201 before the driver laser beam L1 is irradiated. Thereby, the droplet 201 diffuses and expands. The diffused / expanded droplet 201 is irradiated with the driver laser light L1 at a predetermined position. Thereby, the droplet 201 is turned into plasma. EUV light L2 is generated from the plasma.

This embodiment configured in this way will also have the same effects as the first embodiment. Furthermore, in this embodiment, the droplet 201 may be diffused and expanded in advance using the pre-pulse laser beam L3. Thereby, the surface area which the droplet 201 can absorb a laser can be enlarged, and a spatial density can be reduced. Therefore, the driver laser light L1 can be efficiently absorbed by the droplet 201, and the generation efficiency of EUV light can be increased.

As described above, in this embodiment, the small-diameter droplet 201 can be ejected at high speed by electrostatic attraction (and pressure change). Therefore, by expanding the small-diameter droplet 201 with the pre-pulse laser beam L3 and then guiding it to the irradiation point of the driver laser beam L1, the area on which the driver laser beam L1 hits can be increased, and the generation efficiency of EUV light can be increased. It can be further increased.

The tenth embodiment will be described with reference to FIGS. In the following several embodiments including this embodiment, a position correction device 700 for correcting the trajectory of the droplet 201 may be provided. The position correction apparatus 700 may correct the trajectory (position) of the droplet 201 with an electric field or a magnetic field, as will be described later.

FIG. 18 is an overall view of the EUV light source apparatus 1C according to the present embodiment. The EUV light source device 1C of the present embodiment may include one position correction device 700 for making the trajectory of the droplet 201 coincide with the ideal trajectory R (see FIG. 19). A predetermined voltage is applied to the position correction device 700 by the position correction controller 360. The position correction controller 360 may be operated in accordance with an instruction from the EUV light source controller 300.

Here, of the trajectories when the droplet 201 passes through the position correction apparatus 700, the trajectory that linearly travels to the EUV generation point and does not need to be corrected by the position correction apparatus 700 is referred to as “ Called the "ideal orbit".

As the electrode configuration of the position correction apparatus 700, either a single electrode configuration consisting of a single electrode or a block electrode configuration in which a plurality of electrodes are blocked can be adopted. Further, as the block electrode configuration, either one block configuration using only one electrode block or a plurality of block configurations using a plurality of electrode blocks can be adopted. Hereinafter, the configuration of these electrodes will be sequentially described.

FIG. 19 shows a configuration example of the electrodes included in the position correction apparatus 700. The position correction apparatus 700 may have a single circular hole electrode 710. FIG. 19 (1) shows a plan view of the circular hole electrode 710. FIG. 19 (2) shows a cross-sectional view of the circular hole electrode 710.

The circular hole electrode 710 may be a disk-shaped electrode having a circular hole 711 at the center. The circular hole electrode 710 has an ideal trajectory R
It is good that it is provided perpendicular to. The center of the circular hole electrode 710 is preferably arranged so as to coincide with the ideal trajectory R of the droplet 201. An example of a single electrode is not limited to a disk shape, and may be a cylindrical shape. Also in the case of a cylindrical electrode, it may be arranged so that the central axis of the cylinder coincides with the ideal trajectory R.

FIG. 20 shows an equipotential in the vicinity of the circular hole 711 when electric fields E1 and E2 (E1 <E2) having different strengths are formed on one surface S1 side and the other surface S2 side of the circular hole electrode 710, respectively. The distribution of the surface is shown.

In the circular hole 711 portion, as shown in FIG. 20, the equipotential surface is distributed so as to protrude from the surface S2 side where the electric field strength is strong to the surface S1 side where the electric field strength is weak. That is, the equipotential surface that protrudes into the circular hole 711 will form a curved surface having a vertex on the ideal trajectory R. When a charged particle, that is, a droplet 201 enters the circular hole 711 from the upper side in FIG. 20, the trajectory will be changed to be perpendicular to the equipotential surface. As a result, the trajectory of the droplet 201 will be modified to go to the ideal trajectory R, similar to the convex lens in the optical system.

This embodiment configured in this manner will also have the same effects as the first embodiment. Furthermore, in this embodiment, since the position correction device 700 is provided, the position of the droplet 201 can be corrected to the ideal trajectory R, and the droplet 201 is sent to the irradiation point of the laser beam more accurately. Can do.

In this embodiment, the droplet 201 entering the position correction device 700 with a deviation from the ideal trajectory R is directed to the plasma generation point (P202 in FIG. 26) by the electric field formed in the position correction device 700. The direction of travel will be corrected. Thereby, even if the direction of the droplet 201 ejected from the target ejection unit 120 is unstable, the position correction apparatus 700 can correct the target material trajectory toward the EUV generation point. .

In particular, even when the injection direction from the target injection unit 120 changes instantaneously, the trajectory of the droplet 201 is automatically corrected to the trajectory toward the EUV generation point by the electric field formed in the position correction device 700. Will. The droplet 201 is stably supplied to the EUV generation point, and the EUV light source apparatus 1C of the present embodiment can generate EUV light more stably.

The eleventh embodiment will be described with reference to FIG. FIG. 21 shows a configuration example of electrodes included in the position correction apparatus 700. FIG. 21 (1) is a perspective view of the block electrode 720. The block electrode 720 may be an electrode having a one-block configuration constituted by three circular hole electrodes 721A to 721C. The centers of the circular hole electrodes 721A to 721C may be located on the same axis. The circular hole electrodes 721A to 721C are preferably parallel to each other and arranged at equal intervals. Further, the common central axis of the three circular hole electrodes 721A to 721C may be set to coincide with the ideal trajectory R of the droplet 201.

FIG. 21B is a cross-sectional view of the block electrode 720 in the XZ plane passing through the ideal trajectory R. By maintaining the circular hole electrode 721A (incident side) and the circular hole electrode 721C (exit side) at an equipotential (for example, ground potential) and applying a positive or negative potential to the central circular electrode 721B, the block electrode 720 A so-called Einzel lens (unipotential lens) is formed. Thereby, the block electrode 720 will act on the charged droplet 201 in the same manner as a convex lens.

That is, in the present embodiment, the block electrode 720 can apply the convergence force in the X direction and the Y direction to the droplet 201 without accelerating or decelerating the droplet 201 in the Z direction. This embodiment will have the same effect as the tenth embodiment.

The twelfth embodiment will be described with reference to FIGS. In this embodiment, the block electrode 730 may be used as the position correction device 700. The block electrode 730 may be configured as a quadrupole electrode having four cylindrical electrodes 731A to 731D.

22A is a plan view of the block electrode 730, and FIG. 22B is a cross-sectional view of the block electrode 730. The cylindrical electrodes 731A to 731D may be parallel to each other and arranged at equal intervals on a circle C1 having a predetermined radius. The center of the circle C1 may be set to coincide with the ideal trajectory R of the droplet 201. The block electrode 730 is not limited to a quadrupole electrode having four cylindrical electrodes, but may be a multipole electrode having an even number of six or more cylindrical electrodes.

In the multipole electrode configuration, by adjusting the length of the cylindrical electrode in the Z-axis direction (the height of the cylinder), a stronger force than the flat circular hole electrode can be applied to the droplet 201. Thus, the multipole electrode configuration would be effective for large weight particles of molten metal such as droplet 201.

FIG. 23 shows the potentials of the electrodes 731A to 731D in the XY plane with the block electrode 730 and the potential distribution generated by the electrodes 731A to 731D. In the illustrated example, an equipotential (V) may be applied to the pair of axially symmetric opposing electrodes 731A and 731C, and an equipotential (−V) of the opposite polarity may be applied to the other pair of electrodes 731B and 731D. .

Origin O (X, Y) = (0, 0) in FIG.
If the distance from each of the electrodes 731A to 731D is La, the electric field Ex in the X-axis direction and the electric field Ey in the Y-axis direction are expressed by the following equations (1) and (2).
Ex =-(2x / La ^ 2) V (1) Formula Ey =-(2y / La ^ 2) V (2) Formula

That is, in the potential distribution in the space surrounded by the four electrodes 731A to 731D, the potential at the origin O is 0. The potential in the Y-axis direction decreases as the distance from the origin O increases. The potential in the X-axis direction increases as the distance from the origin O increases. If the positively charged droplet 201 enters this electric field, a converging force toward X = 0 acts in the X axis direction, and a divergent force that increases the absolute value of Y acts in the Y axis direction. At this time, the magnitude of the convergence force and the magnitude of the divergent force will be equal. In the case of the negatively charged droplet 201, the converging force will work in the Y-axis direction and the diverging force will work in the X-axis direction, contrary to the positive case.

This embodiment configured in this manner will also have the same effect as the tenth embodiment. Furthermore, in this embodiment, since the block electrode 730 having the four cylindrical electrodes 731A to 731D is used as the position correction device 700, a stronger force can be applied to the droplet 201 to correct the position of the droplet 201.

A thirteenth embodiment will be described with reference to FIGS. In this embodiment, a plurality of block electrodes 741 and 742 may be used. As described above, in the configuration of the quadrupole electrode, a force that converges in one direction of the X axis and the Y axis acts, whereas a force that diverges in the other direction will act. Therefore, in order to introduce the droplet 201 having an error in the X-axis direction and an error in the Y-axis direction to the EUV generation point, two or more block electrodes may be arranged in the Z-axis direction.

The block electrode having a multi-block configuration as a whole will exert a force on the droplet 201 (charged particles) so that the traveling direction of the droplet 201 converges to one point. That is, a block electrode having a multi-block configuration will function equivalent to a lens for light. For this reason, an electrode having a multi-block configuration is called an electrostatic lens. In the configuration having a plurality of block electrodes, each block electrode functions as a lens in the X-axis direction or the Y-axis direction. Accordingly, the entire block electrode having a multi-block configuration will exhibit the same effect as that of the optical imaging optical system.

FIG. 24 is a perspective view of a block electrode 740 having a doublet structure as the position correction apparatus 700. FIG. In this embodiment, a block electrode 740 having a doublet structure in which two quadrupole electrodes are arranged in the Z-axis direction may be used. FIG. 25 is a cross-sectional view of the block electrode 740 in the XZ plane passing through the ideal trajectory R.

The block electrode 740 may include a front quadrupole electrode 741 composed of cylindrical electrodes 743A to 743D and a rear quadrupole electrode 742 composed of cylindrical electrodes 743E to 743H. As in the case of the one-block configuration described with reference to FIG. 22, in the preceding quadrupole electrode 741, the cylindrical electrodes 743A to 743D are parallel to each other and may be arranged at equal intervals on a circle C2 having a predetermined radius. Good.

Similarly, in the quadrupole electrode 742 in the subsequent stage, the cylindrical electrodes 743E to 743H may be arranged at equal intervals on a circle C3 having the same radius as that of C2, with the column electrodes 743E to 743H being parallel to each other. Further, the quadrupole electrode 741 and the quadrupole electrode 742 may be arranged so that the centers of the circles C2 and C3 coincide with the ideal trajectory R and are parallel to each other in the Z-axis direction. Good. In the example of FIG. 24, the cylindrical electrodes 743A and 743C and the cylindrical electrodes 743E and 743G may be arranged on the X axis, and the cylindrical electrodes 743B and 743D and the cylindrical electrodes 743F and 743H may be arranged on the Y axis. .

As described above, in the block electrode 740 in which the cylindrical electrodes 743A to 743H are arranged, the potential pattern applied to the quadrupole electrode 741 and the potential pattern applied to the quadrupole electrode 742 are rotated by 90 degrees relative to each other. It should be.

That is, in one quadrupole electrode 741, a positive potential (V11) is applied to the cylindrical electrodes 743A and 743C on the X axis, and a negative potential (−) is applied to the cylindrical electrodes 743B and 743D on the Y axis.
V11). On the other hand, in the other quadrupole electrode 742, a negative potential (−V12) is applied to the cylindrical electrodes 743E and 743G on the X axis, and a positive potential (V12) is applied to the cylindrical electrodes 743F and 743H on the Y axis. Is done. Note that the absolute value of the potential applied to the quadrupole electrode 741 and the quadrupole electrode 742 (that is, the values of V11 and V12) may be the same value or different values.

The potential distribution around the quadrupole electrode 741 will be similar to that shown in FIG. That is, the positively charged droplet 201 will converge in the X-axis direction and diverge in the Y-axis direction by passing through the quadrupole electrode 741. On the other hand, the potential distribution around the quadrupole electrode 742 should be a potential distribution obtained by rotating the potential distribution shown in FIG. 23 by 90 degrees. Therefore, the positively charged droplet 201 can diverge in the X-axis direction by passing through the quadrupole electrode 742 and further converge in the Y-axis direction.

FIG. 26 shows a case where the block electrode 740 having the above-described doublet configuration is adopted as the position correction apparatus 700. In FIG. 26, the droplet 201 passes from the generation point P120 of the droplet 201 through the front quadrupole electrode 741 and the rear quadrupole electrode 742 of the block electrode 740 and reaches the plasma generation point P202. The trajectory up to is shown. The droplet generation point P120 is the nozzle position of the target injection unit 120. Using FIG. 26, an imaging condition for the droplet 201 to converge to the plasma generation point P202 is obtained. In addition, the upper stage of FIG. 26 shows the locus in the XZ plane. The lower part of FIG. 26 shows the locus in the YZ plane.

As shown in FIG. 26, the distance from the generation point P120 of the droplet 201 of the target injection unit 120 to the previous quadrupole electrode 741 is Lb. The distance between the front quadrupole electrode 741 and the rear quadrupole electrode 742 is Ls. The distance from the subsequent quadrupole electrode 742 to the plasma generation point P202 is Lc. Let L be the length of the quadrupole electrodes 741 and 742 in the Z-axis direction (the height of the cylinder).

When the effective focal lengths given by the respective quadrupole electrodes 741 and 742 as electrostatic lenses are respectively denoted by f1 and f2, the combined focal length (focal length of the block electrode 740) F by the two electrostatic lenses is thin. Using the approximation of the lens, it is simply expressed as:
1 / F = (1 / f1) + (1 / f2) − (Ls / f1 · f2) (3)

Therefore, it is preferable to configure the block electrode 740 in an optical system that forms an image of the droplet 201 on the plasma generation point P202 by using the synthetic focal length F determined by the above formula (3). Each electrostatic lens composed of the two quadrupole electrodes 741 and 742 has equal focal lengths having different polarities in the XZ plane (Y = 0) and the YZ plane (X = 0). (F = f1 = −f2).

For example, the initial velocity of the droplet 201 in the Z-axis direction is 20 m / s, the particle size of the droplet 201 is 30 μm, and the charge amount of the droplet 201 is 2 pC. When V = 500 V, Lb = 5 mm, and L = 10 mm in the relationship shown in Expression (1), the effective focal length of each electrostatic lens (741, 742) is f = 50 mm. Therefore, when Ls = 37.5 mm, the imaging condition of Lb = Lc = 150 mm is satisfied.

27 and 28 show the simulation result of the trajectory of the droplet 201 when the block 740 satisfying the above conditions is used. The droplet 201 has an initial velocity in the direction perpendicular to the Z axis (the direction of the XY plane).

FIG. 27 shows the simulation result when the initial speed is 1 mm / s in the direction perpendicular to the Z-axis. FIG. 28 shows a simulation result when the initial velocity is 10 mm / s in the direction perpendicular to the Z axis. As can be seen from FIGS. 27 and 28, the trajectory of the droplet 201 converges at a position of Lc = 150 mm regardless of the magnitude of the initial velocity in the direction perpendicular to the Z axis.

In this embodiment configured as described above, the same effect as the tenth embodiment will be obtained. Further, in this embodiment, since the doublet configuration of the quadrupole electrode is adopted as the position correction device 700, the droplet 201 can be accurately guided to the plasma generation point P202.

The fourteenth embodiment will be described with reference to FIGS. In this embodiment, a block electrode 750 having a triplet configuration may be used.

As shown in FIGS. 26 to 28, the distance Lb between the droplet generation point P120 and the quadrupole electrode 741 is equal to the distance Lc from the quadrupole electrode 742 to the plasma generation point P202 (convergence position). Become. Therefore, in the case of the doublet configuration, the distance Lc is uniquely determined by determining the distance Lb. That is, it is difficult to set the distance Lc to an arbitrary value in a block electrode having a doublet configuration.

On the other hand, in the case of the block electrode 750 having a triplet configuration in which three quadrupole electrodes are arranged in the Z-axis direction, the distance Lc from the last quadrupole electrode 754 to the plasma generation point P202 is set to an arbitrary value. Can be set. FIG. 29 shows a configuration of the block electrode 750 having a triplet configuration. FIG. 30 shows a simulation result of trajectory calculation when the block electrode 750 having a triplet configuration is used.

The block electrode 750 of the present embodiment is configured by arranging a first quadrupole electrode 751, a second quadrupole electrode 752, and a third quadrupole electrode 754 coaxially in the Z-axis direction. Is done. As shown in FIG. 24, each quadrupole electrode 751, 752, 754 may be composed of four cylindrical electrodes spaced on the same circle at equal intervals in the circumferential direction.

Here, the distance between the quadrupole electrode 751 and the quadrupole electrode 752 and the distance between the quadrupole electrode 752 and the quadrupole electrode 754 are the same distance Ls. A distance Lb from the droplet generation point P120 to the quadrupole electrode 751 is set to 150 mm. The electrostatic lenses of the three quadrupole electrodes 751, 752, and 754 have equal focal lengths having different polarities on the XZ plane (Y = 0) and the YZ plane (X = 0), respectively ( f = f1 = −f2 = f3).

In the tin droplet, the case where the initial velocity of the droplet 201 in the Z-axis direction is 18 m / s, the particle size of the droplet 201 is 30 μm, and the charge amount of the droplet 201 is 2 pC will be described. In this case, when V = 330 V, Lb = 5 mm, and L = 10 mm are set in the relationship shown in the equation (1), as shown in FIG. 30, the quadrupole electrode is used regardless of the initial velocity in the direction perpendicular to the Z axis. It turns out that it converges to the point of distance Lc = 725mm from 754.

As described above, in the doublet configuration shown in FIG. 24, it is difficult to change the distance Lb from the droplet generation point P120 to the convergence point P202 (plasma generation point) of the droplet trajectory. However, in the triplet configuration according to the present embodiment, regardless of the value of the distance Lb from the droplet generation point P120 to the triplet electrode 750, the droplet trajectory convergence point P202 (P202 is an EUV generation point or plasma generation point). The distance Lc up to) can be set at an arbitrary position. The distance Lc can be set to an arbitrary value by optimizing the electrode potential.

This embodiment configured in this manner will also have the same effect as the tenth embodiment. Furthermore, in the present embodiment, the distance Lc from the triplet electrode 750 to the plasma generation point P202 can be set at an arbitrary position by adjusting the electrode potential, so that the degree of freedom in design is likely to be improved.

The fifteenth embodiment will be described with reference to FIG. In each of the tenth and subsequent examples, the trajectory of the charged droplet 201 may be converged to the plasma generation point P202 by an electric field. In the present embodiment, the trajectory of the charged droplet 201 may be converged to the plasma generation point P202 using a magnetic field. In the present embodiment, a magnet may be used as the position correction device 700.

FIG. 31 shows an example of a magnet block 760 applicable to the position correction device 700. The magnet block 760 of the present embodiment may be composed of a plurality of magnets 761A to 761D. FIG. 31 (1) shows a perspective view of the magnet block 760. The magnet block 760 may be formed by four rectangular parallelepiped magnets 761A to 761D having the same shape. FIG. 31 (2) is a plan view of the magnet block 760. Each of the magnets 761A to 761D is a permanent magnet or an electromagnet.

The magnets 761A to 761D may be arranged at equal intervals on the circumference of a circle C4 having a certain radius. Furthermore, the magnets 761A to 761D are preferably arranged in parallel to each other so that one side surface (inner side surface) faces the center of the circle C4. That is, the inner surfaces of the pair of opposing magnets 761A and 761C, 761B and 761D are preferably substantially parallel to each other. Furthermore, the center of the circle C4 may be set to coincide with the ideal trajectory R.

The opposing surfaces of the opposing magnets 761A and 761C, 761B and 761D should be arranged to have the same polarity. Further, for example, the inner surfaces of the adjacent magnets 761B and 761D may have opposite polarities with respect to the polarity of the inner surface of the magnet 761A. That is, in the case of FIG. 31, the facing surfaces of the magnets 761A and 761C are preferably N poles, and the facing surfaces of the magnets 761B and 761D are preferably S poles. As a result, the magnetic field lines will be distributed so as to exit from the magnets 761A and 761C and enter the magnets 761B and 761D, as shown in FIG. 31 (2).

When the charged droplet 201 enters the magnetic field formed by the magnet block 760, Lorentz force acts on the droplet 201. Thereby, the trajectory of the droplet 201 is deflected. Unlike the above-described quadrupole electrode, the direction of the Lorentz force applied to the droplet 201 is inclined 45 degrees with respect to the X axis and the Y axis. However, it is the same as in the case of the electric field in that the droplet 201 is guided to the plasma generation point P202 by the magnetic field of the magnet block 760. Therefore, even if the magnet block 760 is used instead of the electrode as in this embodiment, the same effect as in the tenth embodiment will be obtained.

The sixteenth embodiment will be described with reference to FIGS. In this embodiment, in addition to the position correction device 700, an acceleration device may be further included. The acceleration device may include at least one acceleration electrode 800 and one acceleration controller 370 for applying a predetermined voltage to the acceleration electrode 800. The acceleration controller 370 may operate according to an instruction from the EUV light source controller 300.

The acceleration electrode 800 may be formed in a disk shape having a circular hole, for example. The droplet 201 is accelerated by the acceleration electrode 800 to which a predetermined voltage is applied. The faster droplet 201 will pass through the position correction device 700 and reach the plasma generation point P202.

Also in this embodiment configured as described above, since the speed of the droplets 201 is increased by the acceleration electrode 800, the distance between the droplets 201 can be increased. Therefore, the influence on the next droplet 201 by the plasma generation point 202 can be reduced.

In FIG. 32, the case where the acceleration electrode 800 is provided between the target injection unit 120 and the position correction apparatus 700 is shown, but instead of this, as shown in FIG. 33, the position correction apparatus 700 and the plasma generation are performed. An acceleration electrode 800 may be provided between the point 202 and the point 202.

The seventeenth embodiment will be described with reference to FIGS. The EUV light source apparatus 1E of the present embodiment may include an apparatus 900 for performing acceleration and position correction. FIG. 34 is an overall configuration diagram of the EUV light source apparatus 1E according to the present embodiment. FIG. 35 shows a cross-sectional view of the device 900.

The acceleration and position correction apparatus 900 can accelerate the droplet 201 and further correct the position (orbit) of the droplet 201 in cooperation with the electrode unit 123 of the target injection unit 120. A predetermined voltage may be applied to the acceleration and position correction apparatus 900 by the acceleration and position correction controller 380. The acceleration and position correction controller 380 may operate according to an instruction from the EUV light source controller 300.

As shown in the cross-sectional view of FIG. 35, the acceleration and position correction apparatus 900 may be configured as a disk electrode having a circular hole 901, for example. Hereinafter, for convenience of description, the acceleration and position correction apparatus 900 may be referred to as an acceleration electrode 900.

The acceleration electrode 900 may be provided so as to be separated from the electrode part 123 by a predetermined distance d2 so that the center thereof coincides with the center of the electrode part 120. A positive predetermined voltage may be applied to each of the electrode portion 123 and the acceleration electrode 900. Thereby, the electrode part 123 for droplet extraction and the electrode 900 for droplet acceleration will function as an electrostatic lens as a whole.

Here, the trajectory of the charged particles in the electrostatic field is determined by the potential distribution in the region where the charged particles move. In the case of an axially symmetric beam, the potential distribution in the region near the center axis of the beam can be represented by the potential distribution on the center axis. Therefore, the properties of the lens can be described only by information on the potential on the central axis (one-dimensional potential information).

The reason is that the three-dimensional information of the potential is connected by the Laplace equation, and is not independent of each other but correlated. An equation representing the trajectory of a charged particle close to the central axis only by the potential distribution on the axis is called a paraxial trajectory equation.

The paraxial trajectory equation is a circular cross section in which the trajectory is cylindrically symmetric. When a cylindrical coordinate system in which the central axis in the traveling direction is the z coordinate, the radial direction is the r coordinate, and there is no change in the θ direction is shown in FIG. ). In the equation, V (z, r) represents a potential at coordinates (z, r).

FIG. 36 shows the relationship between the electric field formed by the electrodes 123 and 900 and the trajectory of the droplet 201 passing through the electric field. From the paraxial trajectory equation shown in Equation 1, the focal point of the electrostatic lens can be obtained.

The range covered by the electric field generated by the electrode is between z1 and z2. It is assumed that the distance between z1 and z2 is short, and the value r0 in the r direction of the charged particle trajectory hardly changes between z1 and z2, and only the inclination thereof changes. The focal length f2 when the charged droplet 201 is incident in parallel to the z axis from the electrode portion 123 of the target emitting unit 120 can be obtained from the following equation.

When the focal length is positive, it indicates that the lens is a focusing lens. Conversely, a negative focal length indicates a divergent lens. Therefore, in order to focus the droplet 201 on the plasma generation point P202, it is preferable to have a potential distribution such that the focal length shown in Formula 2 has a positive value.

This embodiment configured in this manner will also have the same effect as the tenth embodiment. Further, in this embodiment, an electrostatic lens may be configured by the electrode portion 123 for pulling out the droplet 201 from the nozzle portion 122 and the electrode 900 for accelerating the pulled droplet 201. Therefore, in the present embodiment, a simpler configuration can be achieved as compared with the configurations shown in FIGS. 32 and 33, and the manufacturing cost and the like can be reduced.

In addition, although the case where one acceleration electrode was used was shown, it is good also as a structure which provides not only this but two or more acceleration electrodes. Even when two or more accelerating electrodes are used, it is preferable to set the potential distribution so that the focal length has a positive value. Furthermore, in this embodiment, the case where a positive voltage is applied to each of the electrodes 123 and 900 has been described, but a configuration in which a negative voltage is applied may be used.

Next, an eighteenth embodiment will be described with reference to FIG. FIG. 37 is an explanatory diagram showing the overall configuration of the EUV light source apparatus 1D2. In the present embodiment, the position correction device 700 may be removed from the configuration shown in FIG. 32 or FIG. In the present embodiment, only the acceleration device that accelerates the droplet 201 emitted from the target injection unit 120 toward the plasma generation point 202 may be provided.

As in the sixteenth embodiment, the acceleration device may include at least one acceleration electrode 800 and an acceleration controller 370 for applying a predetermined voltage to the acceleration electrode 800. The acceleration controller 370 may operate according to an instruction from the EUV light source controller 300.

This embodiment configured in this manner will also have the same effect as the first embodiment. Also in this embodiment, the speed of the droplet 201 can be increased by the acceleration electrode 800. For this reason, the distance between each droplet 201 can be enlarged. Therefore, it is possible to reduce the possibility that the plasma generated from the previously ejected droplet 201 affects the next droplet 201.

Next, a nineteenth embodiment will be described with reference to FIGS. In some embodiments including the present embodiment, a high voltage may be applied to the target material 200 in the target injection unit 120, and the electrode unit 123 and the chamber 100 may be grounded. FIG. 38 is an explanatory diagram showing the overall configuration of the EUV light source apparatus 1F. FIG. 39 is a diagram illustrating the configuration of the target injection unit 120 and the pressure control unit 330.

The configuration of the present embodiment is different from the first embodiment in that a high voltage pulse from the pulse control unit 320 is supplied to the target injection unit 120. Therefore, in the present embodiment, it is preferable that the electrical insulating unit 1100 be disposed between the chamber 100 and the target injection unit 120. The pulse voltage may be a positive or negative high voltage pulse signal.

The insulating unit 1100 should electrically insulate the target injection unit 120 and the chamber 100 and maintain airtightness in the chamber 100. Furthermore, the insulating portion 1100 is preferably formed from a material that has both thermal insulation and heat resistance with respect to the target material 200. From the above, the insulating portion 1100 is preferably formed from, for example, alumina (AI2O3), silica, or synthetic quartz (SiO2).

In this embodiment, the chamber 100 and the electrode unit 123 may be grounded. Note that grounding does not necessarily mean that the ground potential is set.

When the pulse controller 320 supplies a pulse voltage to the main body 121, the target material 200 at the tip of the nozzle 122 </ b> B will be charged via the main body 121. The target material 200 exposed to the high electric field will be pulled out from the tip portion of the nozzle 122B by the electrostatic attraction force acting between the electrode portion 123 and become the droplet 201. The droplet 201 will be accelerated in one direction on the path from the nozzle part 122B to the electrode part 123 (on the electric field).

By accelerating, the droplets 201 become faster and the distance between each droplet 201 will increase. In the present embodiment, as described above, a high voltage pulse may be applied to the target material 200 in the main body 121 and the electrode 123 may be grounded. The chamber 100 and each structure in the chamber 100 may also be grounded. Therefore, the potential of the electrode portion 123 is substantially the same as the potential of the chamber 100 and the potential of each structure in the chamber 100, and there is almost no potential difference. Therefore, the droplet 201 after passing through the electrode portion 123 will head toward the plasma emission point 202 without acceleration / deceleration. In contrast, in the first embodiment, the target material 200 and the chamber 100 are grounded, and a high voltage pulse is applied to the electrode portion 123. Therefore, a potential difference may occur on the path from the nozzle unit 121 to the plasma generation point 202. For this reason, in the configuration of the first embodiment, there is a possibility that the speed of the droplet 201 is reduced as compared with the configuration of the 19th embodiment.

In the example shown in FIGS. 38 and 39, a configuration is shown in which the pressure controller 330 sets the target material 200 in the main body 121 to a constant pressure. This embodiment can also be applied to a configuration in which no pressure is applied to the target material 200.

Next, a twentieth embodiment will be described with reference to FIG. In the present embodiment, the main body 121 (F) of the target injection unit 120F may be formed of an electrically insulating material (AI2O3, AIN, etc.). Therefore, in the present embodiment, there is a high possibility that the insulating portion 1100 required in the nineteenth embodiment is unnecessary.

In the present embodiment, one or a plurality of feedthroughs 321 may be provided so as to penetrate the heating unit 125 and the main body 121 (F) from the radial direction of the target injection unit 120F. The feedthrough 321 is a terminal for introducing current. The feedthrough 321 is formed in a cylindrical shape from an insulating material such as ceramics.

The proximal end side of the conducting wire 322 may be connected to the pulse control unit 320. The leading end side of the conducting wire 322 may be inserted into the main body 121 (F) through the feedthrough 321. The leading end side of the conducting wire 322 may extend toward the leading end side of the main body 121 (F). The pulse controller 320 supplies a high voltage pulse voltage to the target material 200 via the conducting wire 322.

Configuring this embodiment like this will also have substantially the same effect as the nineteenth embodiment. Furthermore, according to the present embodiment, the pulse voltage can be directly supplied to the target material 200 without using the main body 121 (F). Since the insulating portion 1100 is not necessary, the configuration can be simplified.

In FIG. 40, only one feedthrough 321 is shown, but a plurality of feedthroughs 321 may be arranged.

Next, a twenty-first embodiment will be described with reference to FIG. This embodiment has many configurations common to the twentieth embodiment. The main body 121 (G) may be formed of an electrically insulating material, as in the twentieth embodiment. However, the feedthrough 321 of the present embodiment may be provided through only the main body 121 (G). For example, the feedthrough 321 may be inserted through the ceiling portion of the main body 121 (G) toward the nozzle portion. The feedthrough 321 according to the present embodiment may not penetrate the heating unit 125.

Configuring this embodiment like this would also have the same effects as the twentieth embodiment. Furthermore, in the present embodiment, since the feedthrough 321 is provided so as to penetrate only the main body 121 (G), the configuration can be simplified compared to the twentieth embodiment.

Next, a twenty-second embodiment will be described with reference to FIG. This embodiment has many configurations common to the twentieth embodiment. However, in this embodiment, the insulating part 1200 may be formed by coating the inner surface of the housing part 121B of the main body part 121 (H) and the inner surface of the injection passage 121C with an insulating material.

Configuring this embodiment like this will also have substantially the same effect as the nineteenth embodiment. In this embodiment, since the inner surface of the accommodating portion 121B is covered with the insulating portion 1200, the main body portion 121 (H) does not have to be formed from an electrically insulating material. For this reason, since the main-body part 121 (H) can be formed with electroconductive materials, such as a metal, a structure can be simplified.

In order to concentrate the electric field on the target material 200, the nozzle part 122 preferably has electrical insulation. For example, the nozzle material having electrical insulation includes diamond and crystalline alumina.

Next, a twenty-third embodiment will be described with reference to FIG. In the present embodiment, an insulating portion 1200A may be provided on the inner surface of the accommodating portion 121B of the main body 121 (I) and the inner surface of the injection passage 121C. Furthermore, in this embodiment, another insulating part 1200B may be provided on the contact surface between the main body part 121 (I) and the nozzle part 122. The insulating part 1200 </ b> B is preferably provided in order to prevent the occurrence of creeping discharge on the contact surface between the main body part 121 (I) and the nozzle part 122. Configuring this embodiment like this will achieve the same effects as the nineteenth embodiment.

Next, a twenty-fourth embodiment will be described with reference to FIGS. FIG. 44 is an explanatory diagram showing the overall configuration of the EUV light source apparatus 1G. FIG. 45 is a diagram showing a change in voltage in the path from the nozzle part 122 to the acceleration electrode 800.

In the EUV light source device 1G of the present embodiment, a high voltage may be applied to the main body part 121 (J) and the electrode part 123. The acceleration electrode 800 may be grounded. As shown in FIG. 45, a high voltage supply device 390 for supplying a high voltage applies a high voltage Vh to the main body 121 (J). A pulse voltage Vm for extraction is applied from the pulse control unit 320 to the electrode unit 123 for extracting the target material 200 from the nozzle. The pulse voltage Vm may be set to a voltage lower than the voltage Vh with the voltage Vh applied to the main body 121 (J) as a base voltage.

The target material 200 pulled out from the nozzle part 122 by the electrode part 123 becomes a droplet 201 and will go to the plasma emission point 202. Since the acceleration electrode 800 and the chamber 100 are grounded, there is almost no potential difference in the path from the acceleration electrode 800 to the plasma generation point 202. Accordingly, the droplet 201 that has passed through the acceleration electrode 800 will be directed to the plasma emission point 202 in a straight line without acceleration / deceleration.

In addition, this embodiment can be expressed as follows. “The target injection unit includes a main body that stores a target material to which a high voltage is applied, a nozzle unit that is provided in the main body so as to face the chamber, and injects the drop target material, and the nozzle unit Provided in isolation from the drop target material in the injection direction, an electrode part having an opening through which the drop target material passes, and provided downstream of the electrode part and passed through the opening. An acceleration electrode for accelerating the droplet target material, and a pulse signal having a voltage lower than a voltage applied to the target material is applied to the electrode portion, and the acceleration electrode is grounded Has been done "

Configuring this embodiment like this will also have the same effects as the nineteenth embodiment.

In the twentieth embodiment to the twenty-fourth embodiment (see FIGS. 40 to 43), the conducting wire 322 extends to the distal end side of the main body (121 (F) to 121 (I)). It can also be set short. Ideally, the lead 322 should pass through the liquid level of the target material 200. Therefore, a follow-up mechanism that keeps the tip of the conducting wire 322 in contact with the target material 200 may be provided.

A twenty-fifth embodiment will be described with reference to FIGS. In each of the above-described embodiments, the voltage applied between the electrode portion 123 and the target material 200 is changed in a pulse shape, whereas in this embodiment, the voltage is applied to the target material 200 while keeping the voltage constant. The pressure may be changed in pulses. Note that in this specification, applying pressure to the target material 200 means applying pressure directly or indirectly to the target material 200.

FIG. 46 is a configuration diagram showing the EUV light source device 1H and the target supply device 1000H as the “target output device” according to the present embodiment.

In this embodiment, a DC voltage controller 320A that generates a DC voltage is used instead of the pulse voltage controller 320 that generates a pulse voltage. Furthermore, in this embodiment, instead of the pressure control unit 330 that applies a constant pressure to the target material 200, a pressure control unit 330A that applies a pulsed pressure change to the target material 200 is used.

FIG. 47 shows the relationship between voltage and pressure. As shown in FIG. 47A, the pressure control unit 330A changes the pressure applied to the target material 200 in the main body 121 in a pulse shape, for example, by sending an inert gas into the main body 121. The maximum value is P1. The DC voltage control unit 320A outputs a predetermined voltage V1 at a constant level. That is, the DC voltage control unit 320 </ b> A applies the DC voltage V <b> 1 to the electrode unit 123.

In the case of FIG. 47 (a), the target material 200 in the nozzle 122B may slightly protrude toward the electrode portion 123 so as not to be discharged due to the electrostatic attractive force acting between the electrode portion 123 and the target material 200. In this state, when the pressure P1 is applied to the target material 200, the target material 200 on the tip side of the nozzle 122B is discharged toward the electrode portion 123 to become the droplet 201. From the nozzle 122B, the droplet 201 can be ejected in synchronization with the pulsed pressure change.

47 (b), the pressure P2 may be applied to the target material 200 in advance, and the pressure may be increased from P2 to P1 when the droplet is injected. Also in the example shown in FIG. 47B, a constant electrostatic attraction force by the DC voltage V1 acts on the target material 200. When the pressure applied to the target material 200 changes from P2 to P1 under a state where an electrostatic attraction force is acting, the droplet 201 can be ejected from the nozzle 122B.

Thus, the droplet 201 is ejected from the nozzle part 122B by applying a pressure change to the target material 200 in a state where the constant voltage V1 is applied between the electrode part 123 and the target material 200 in the main body part 121. be able to.

The EUV light source apparatus 1J according to the 26th embodiment will be described with reference to FIG. In the target supply apparatus 1000 </ b> J of the present embodiment, an insulating unit 127 is provided between the target injection unit 120 and the chamber 100, and a DC voltage is applied to the target material 200 in the main body unit 121. The electrode part 123 of the present embodiment may be grounded.

Also in this embodiment, voltage and pressure as shown in FIGS. 47A and 47B are applied to the target material 200. The droplet 201 can be ejected into the chamber 100 from the nozzle portion 122B in synchronization with the pressure that changes in a pulse shape.

A twenty-seventh embodiment will be described with reference to FIGS. In each of the following embodiments including this embodiment, the droplet 201 can be ejected from the nozzle portion 122 by simultaneously applying a constant voltage and a constant pressure to the target material 200.

FIG. 49 is a configuration diagram showing the EUV light source device 1K and the target supply device 1000K according to the present embodiment.

The EUV light source device 1K of the present embodiment may have a ventilation device 140A instead of the exhaust pump 140. The ventilation device 140A includes, for example, an exhaust pump. The ventilator 140A can hold the inside of the chamber 100 in a low pressure state of, for example, about 0.1 to several tens of Pa, or can hold the inside of the chamber 100 to a pressure of about several hundred to several tens of thousands Pa.

Furthermore, the EUV light source device 1K of the present embodiment may include a pre-pulse laser light source 600 as in the ninth embodiment. The prepulse laser light L3 output from the prepulse laser light source 600 may be guided to the vicinity of the plasma generation point in the chamber 100 via the prepulse laser light introduction mirror 611, the parabolic mirror 610, the incident window 112, and the like. .

FIG. 50 schematically shows the control configuration. The exposure apparatus 2 transmits an EUV light emission request signal for requesting the EUV light source controller 300 to emit EUV light.

The EUV light source controller 300 determines at least the droplet diameter, the droplet generation frequency, and the droplet generation start timing based on the EUV light emission request signal, and transmits these values to the droplet controller 310.

The droplet controller 310 has a plurality of parameters for controlling the voltage and other parameters for controlling the pressure based on the droplet diameter, the droplet generation frequency, and the droplet generation start timing received from the EUV light source controller 300. A plurality of parameters may be determined respectively.

The plurality of parameters for controlling the voltage include, for example, a value of a voltage (also referred to as a bias voltage) applied between the electrode unit 123 and the target material 200, a time for applying the bias voltage (first time), and a bias voltage. The timing (first timing) at which is applied can be given. A plurality of parameters for controlling these voltages are referred to as a plurality of voltage control parameters.

Other parameters for controlling the pressure include, for example, the pressure applied to the target material 200, the pressurization time (second time), and the pressurization timing (second timing). The other plural parameters for controlling the pressure are referred to as plural pressure control parameters.

For example, the droplet controller 310 substitutes a value (droplet diameter, droplet generation frequency, droplet generation timing) input from the EUV light source controller 300 into a predetermined arithmetic expression, thereby allowing a plurality of voltage control parameters and A plurality of pressure control parameters can be calculated.

As another method, the droplet 310 can select a plurality of voltage control parameters and a plurality of pressure control parameters, respectively, using a plurality of predetermined tables generated based on experimental results or simulation results. .

In this embodiment, either or both of a method using a predetermined arithmetic expression and a method using a predetermined table may be adopted. For example, a configuration is also conceivable in which one of each voltage control parameter or each pressure control parameter is calculated from a predetermined arithmetic expression, and one of the other parameters is selected from a predetermined table.

The DC voltage control unit 320A includes a controller 321 for controlling a DC voltage value and a voltage generator 322. The DC voltage control unit 320A controls the operation of the voltage generator 322 based on each voltage control parameter input from the droplet controller 310, and generates a predetermined voltage.

The pressure control unit 330A includes a pressure controller 331 and a pressurizing device 350. The pressurizing device 350 may be configured to inject an inert gas into the main body 121 as shown in FIG. 2, or mechanical of a piezo element as shown in FIGS. 6, 9, 13, and 15. A configuration using deformation may also be used. Furthermore, it is good also as a structure which pressurizes the target material 200 with sound pressure using a sound wave generator like a speaker.

The pressure control unit 330A controls the operation of the pressurizing device 350 based on each pressure control parameter input from the droplet controller 310 to generate a predetermined pressure.

In the configuration in which the inert gas is injected into the main body 121 as shown in FIG. 2, the range in which the pressure can be adjusted can be made relatively large. However, there is also a feature that the response time of pressure change is relatively slow.

On the other hand, as shown in FIGS. 6 and 13, in the case where the piezo element 400 is provided outside the wall portion of the injection passage portion 121 </ b> C, located in the middle of the injection passage portion 121 </ b> C as a “passage portion” The response time of pressure change will be shortened. Therefore, the pressure of the target material 200 may be increased or decreased in a short time. However, there is also a feature that the range in which the pressure can be adjusted is relatively small.

Now, when a predetermined pressure is applied to the target material 200 and a predetermined voltage is applied between the target material 200 and the electrode portion 123, the droplets 201 are ejected from the nozzle portion 122 at a predetermined cycle.

When the EUV light source controller 300 receives the EUV light emission request signal from the exposure apparatus 2, the EUV light source controller 300 gives control signals to the pre-pulse laser light source 600 and the driver pulse laser light source 110, respectively. As a result, the droplet 201 is first irradiated with the pre-pulse laser beam L3, and then the driver pulse laser beam L1 is irradiated onto the droplet 201 to generate plasma 202. The EUV light L2 emitted from the plasma 202 is supplied to the exposure apparatus 2.

FIG. 51 schematically shows a state in which a voltage is applied to the nozzle part 122 and the electrode part 123. To be precise, a voltage is applied between the target material 200 in the nozzle part 122 and the electrode part 123, but for the sake of convenience, description will be made assuming that a voltage is applied between the nozzle part 122 and the electrode part 123. .

In this embodiment, a predetermined voltage is supplied so that the potential on the nozzle portion 122 side is relatively higher than the potential on the electrode portion 123 side. In other words, a predetermined voltage is applied between the electrode portion 123 and the nozzle portion 122 so that the potential on the electrode portion 123 side is relatively lower than the potential on the nozzle portion 122 side (the potential on the target material 200 side). Is applied.

Since the mass of the electrons is extremely light, discharge due to field emission is likely to occur from the negative electrode. In addition, discharge due to field emission is likely to occur from the electric field concentration portion. That is, when the electric field concentration portion is present on the negative electrode, the dielectric breakdown voltage is lower than when the electric field concentration portion is present on the anode.

In this embodiment, the nozzle 122B is provided so as to protrude toward the electrode portion 123 in order to effectively apply an electrostatic attraction force to the target material 200 near the tip of the nozzle 122B. As a result, the electric field concentrates on the protruding portion of the nozzle 122B. At this time, if the potential of the nozzle 122B is set lower than the potential of the electrode 123 and the nozzle 122 is used as a negative electrode, the dielectric breakdown voltage is lowered.

On the other hand, in this embodiment, as shown in FIG. 51, by setting the potential on the nozzle portion 122 side higher than the potential on the electrode portion 123 side, the dielectric breakdown voltage is increased with the nozzle portion 122 as the anode. . Thereby, a higher voltage can be supplied between the nozzle part 122 and the electrode part 123 than when the nozzle part 122 is a negative electrode. If a higher voltage can be supplied, a higher electrostatic attractive force can be obtained. In some cases, the electrostatic attractive force may be small depending on the properties of the target material. In this case, since the potential difference can be reduced, a configuration in which the potential on the nozzle portion 122 side is made lower than the potential on the electrode portion 123 side as described later may be possible.

FIG. 52 shows a change in the injection state of the droplet 201 when the voltage value and the pressure value are changed. On the left side of FIG. 52, the voltage, pressure, and droplet state are displayed in order from the top. The right side of FIG. 52 shows droplet injection states (a), (b), and (c).

When a predetermined pressure P11 is applied to the target material 200 in a state where the predetermined voltage V11 is applied between the target material 200 and the electrode portion 123, the droplet 201 is moved to the nozzle portion 122 as shown in the lower side of FIG. From a certain period. One line shown on the lower side of FIG. 52 means the injection timing of one droplet 201.

The state in which the droplets 201 are ejected from the nozzle part 122 at a constant period during the period in which the predetermined voltage and the predetermined pressure are acting simultaneously is referred to as a reference state (c). In the reference state (c), the droplet diameter is D1, and the droplet generation cycle is f1. If the fixed period f1 is made to coincide with the output periods of the pre-pulse laser beam and the driver pulse laser beam, the target material 200 can be consumed without waste and the EUV light can be obtained efficiently.

In FIG. 52, in consideration of the pressure rise time (time delay), the timing of applying pressure to the target material 200 (pressurization timing) is earlier than the timing of applying voltage (bias timing). It is good to set to.

As shown in the upper side of FIG. 52 and FIG. 52 (a), when the voltage applied between the target material 200 and the electrode part 123 is decreased from V11 to V12 (V12 <V11), the droplet diameter is the reference diameter. D2 will be smaller than the value D1 (D2 <D1).

When the voltage value is lowered, the electrostatic attraction force acting on the target material 200 is weakened accordingly, and as a result, it is considered that a smaller amount of the target material 200 than the reference value is ejected as the droplet 201A. Therefore, the droplet diameter could be controlled by changing the voltage value.

As shown in the center of FIG. 52 and FIG. 52 (b), when the pressure applied to the target material 200 is decreased from the reference pressure P11 to P12 (P12 <P11), the droplet generation period is f12 larger than the reference period f1. (F12> f1).

When the pressure value is lowered, the total amount (flow rate) of the target material ejected from the nozzle unit 122 within a predetermined time is lowered, so that the droplet generation cycle f12 is considered to be longer than the reference cycle f1. Therefore, the droplet generation period can be controlled by changing the pressure value.

In the present example configured as described above, a constant voltage is applied between the target material 200 and the electrode portion 123 and a predetermined pressure is applied to the target material 200, whereby droplets are regularly discharged from the nozzle portion 122. 201 could be fired.

Furthermore, in this embodiment, the droplet diameter can be adjusted by controlling the voltage value, and the droplet generation cycle can be adjusted by controlling the pressure value. Therefore, according to a request from the exposure apparatus 2, the droplet 201 having an appropriate droplet diameter can be injected into the chamber 100 at an appropriate cycle. As a result, the present embodiment will be able to obtain EUV light more efficiently while suppressing the generation of debris while having a simpler configuration.

The twenty-eighth embodiment will be described with reference to FIGS. In this embodiment, several modifications of voltage control and pressure control that can be applied to the 27th embodiment will be disclosed.

As shown in FIG. 53 (a), the timing and period for applying a predetermined voltage between the target material 200 and the electrode part 123 and the timing and period for applying a predetermined pressure to the target material 200 are substantially matched. Also good.

As shown in FIG. 53B, for example, a predetermined pressure may be applied to the target material 200 while a predetermined voltage is continuously applied between the target material 200 and the electrode portion 123.

As shown in FIG. 54 (c), a configuration may be adopted in which a low voltage value V14 is applied in advance between the target material 200 and the electrode portion 123 and the voltage is increased from V14 to a predetermined voltage V13 at a predetermined timing. In this case, the voltage value may be increased to V13 and at the same time the predetermined pressure P11 may be applied to the target material 200, or the predetermined pressure P11 may be applied to the target material 200 from the period during which the voltage V14 is applied. But you can.

As shown in FIG. 54D, a predetermined potential difference as a predetermined voltage can be obtained by the potential −V16 below the ground potential (0v) and the potential V15 above the ground potential. That is, the potential on the electrode portion 123 side can be set to −V16, and the potential on the nozzle portion 122 side can be set to V15.

As shown in FIG. 55 (e), a predetermined potential difference can be obtained by the ground potential and the potential −V17 below the ground potential.

As shown in FIG. 55 (f), a predetermined potential difference may be obtained by a potential −V18 below the ground potential and a potential −V19 below −V18.

As shown in FIGS. 54 and 55, the potential difference applied between the target material in the nozzle part 122 and the electrode part 123 may be generated above the ground potential or generated so as to straddle the ground voltage. Alternatively, it may be generated below the ground potential.

The 29th embodiment will be described with reference to FIGS. In this embodiment, several other modified examples of voltage control and pressure control are disclosed. FIG. 56 shows a voltage application method according to this embodiment.

In each of the above-described embodiments, as described in FIG. 51, a predetermined voltage is applied so that the potential on the nozzle portion 122 side (target material 200 side) is higher than the potential on the electrode portion 123 side. On the contrary, in this embodiment, the potential on the nozzle portion 122 side is set to be lower than the potential on the electrode portion 123 side.

56, any one of the voltage application patterns shown in FIGS. 57B and 58, which will be described later, can be applied to the configuration shown in FIG.

FIG. 57A shows a configuration in which the target material 200 is pressurized from a slight negative pressure value −P14 to a positive pressure value P13 when the potential on the nozzle portion 122 side is set higher than the potential on the electrode portion 123 side. Indicates.

Usually, the pressure in the chamber 100 is maintained at a relatively low pressure of about several Pa. However, for example, a halogen gas, an argon gas, or the like may be supplied into the chamber 100 for ion control or debris protection, cleaning of parts in the chamber, maintenance work, and the like. In that case, since the pressure in the chamber 100 becomes high, pressurization of the target material 200 may be started from a value −P14 slightly lower than the pressure in the chamber 100.

Note that the present invention is not limited to the gas state in the chamber 100. The present invention can also be applied to a configuration in which a reactive gas such as hydrogen gas or halogen gas or an inert gas such as argon gas is supplied in the chamber 100 relatively frequently and / or constantly.

Refer to FIG. 57 (b). The configuration shown in FIG. 57B can be applied to the configuration shown in FIG. When the value of the predetermined potential difference as the predetermined voltage can be set relatively small, an unintended discharge phenomenon (incorrect discharge) is unlikely to occur. When a relatively small voltage is applied in this way, the potential on the nozzle portion 122 side can be set lower than the potential on the electrode portion 123 side, as described with reference to FIG.

When the voltage applied between the nozzle part 122 and the electrode part 123 can be made relatively small, as shown in FIG. 57 (b), a relatively small positive voltage value V20 is generated on the electrode part 123 side, and A relatively small negative voltage value −V21 may be generated on the nozzle portion 122 side.

In this state where a relatively small potential difference (= | V20−V21 |) is applied to the target material 200, when the pressure P11 is applied to the target material 200, the droplet 201 can be ejected from the nozzle portion 122. .

Refer to FIG. As shown in FIG. 58, a relatively small negative constant voltage value −V22 may be applied between the nozzle portion 122 and the electrode portion 123. Also in this case, the droplet 201 can be ejected from the nozzle portion 122 within a period in which the pressure P11 is applied to the target material 200.

The 30th embodiment will be described with reference to FIG. In this embodiment, an example of an operation time chart of the EUV light source device will be described. 59, (1) shows an EUV light emission request signal from the exposure apparatus 2, and (2) shows a droplet generation signal output from the EUV light source controller 300 to the droplet controller 310. FIG.

(3) shows a prepulse laser generation signal output from the EUV light source controller 300 to the prepulse laser light source 600, and (4) shows a driver pulse laser light generation signal output from the EUV light source controller 300 to the driver pulse laser light source 110. Indicates.

(5) indicates the prepulse laser light output from the prepulse laser light source 600, and (6) indicates the driver pulse laser light output from the driver pulse laser light source 110.

(7) indicates a bias application signal output from the droplet controller 310 to the DC voltage controller 321. The bias application signal may be a signal for applying a bias voltage (predetermined voltage) between the target material 200 and the electrode part 123. (8) indicates a pressurization signal output from the droplet controller 310 to the pressure controller 331.

(9) indicates the pressure change of the target material 200 due to the operation of the pressurizing device 350. (10) shows the generation of droplets. (11) shows EUV emission.

The droplet generation signal (2) is output at the same time as the EUV emission request signal (1) is output, and the pressurization signal (8) is output at the same time as the droplet generation signal (2). In response to the pressurization signal, the pressurization apparatus 350 is operated to increase the pressure of the target material 200. Considering that it takes a certain time to increase the pressure of the target material 200, the pressurization signal (8) may be output earlier than the bias application signal (7).

In response to the timing when the pressure of the target material 200 reaches a predetermined pressure, a bias application signal (7) is output, and a predetermined voltage is applied between the target material 200 and the electrode part 123.

Thereby, both the electrostatic attractive force based on the predetermined voltage and the predetermined pressure act on the target material 200 simultaneously. Accordingly, a small amount of the target material 200 can be drawn out from the nozzle part 122 and injected into the chamber 100 as the droplet 201. Almost simultaneously with the generation of the droplet 201, a pre-pulse laser beam and a driver laser beam are output, and each of these laser beams irradiates the droplet 201. Thereby, the droplet 201 becomes plasma 202 and generates EUV light.

The 31st embodiment will be described with reference to FIG. In this embodiment, another operation time chart of the EUV light source device will be described. (2)-(11) in FIG. 60 are the same as (2)-(11) described in FIG.

The difference between the time chart of FIG. 60 and the time chart of FIG. 59 is the EUV emission request signal (1). In the example of FIG. 59, the EUV light emission request signal (1) is configured as a pulse train. On the other hand, in this embodiment, the EUV light emission request signal (1) is configured as a gate signal.

At this time, the gate signal may not include the light emission intensity of the EUV light, the light emission frequency, and the diameter of the droplet and information for generating the droplet generation frequency. In such a case, the emission intensity and emission frequency of the EUV light may be input to the EUV light source controller 300 as separate signals, or may be configured in advance in the EUV light source controller 300. The EUV light source controller 300 transmits each value of the droplet diameter, the droplet generation frequency, and the droplet generation start timing to the droplet controller 310.

In addition, this invention is not limited to each Example mentioned above. Not all the combinations of features described in the embodiments are essential to the present invention. A person skilled in the art can make various additions and changes within the scope of the present invention. For example, the above embodiments can be appropriately combined.

In this embodiment, an inert gas is injected into the main body in order to slightly protrude the molten target material from the nozzle. Instead of this, it is possible to use a weight of the target material to slightly protrude from the nozzle tip. Alternatively, the target material may be slightly protruded from the tip of the nozzle using other means such as magnetic force.

Paying attention to the point that the target material is slightly protruded from the tip of the nozzle so that it does not fall spontaneously, the configuration using the pressure control unit, the target material's own weight described in the embodiment, or the configuration using other means such as magnetic force Can be called, for example, “extrusion means”, “extrusion means” and the like.

If attention is paid to the liquid surface shape of the target material at the tip of the nozzle, each of the above-described configurations (configuration using the pressure control unit, the target material's own weight, or using other means such as magnetic force) may be, for example, “ It can also be called "meniscus forming means" or "convex meniscus generating means".

If attention is paid to the pressure of the gas injected into the target injection unit, the pressure control unit can also be referred to as “pressurizing means”, for example.

Although a piezo element is taken as an example of an element that is mechanically deformed in response to an input signal, the present invention is not limited to this, and for example, a magnetostrictive element that deforms due to a magnetic field change can be used.

1, 1A-1K: EUV light source device, 100: chamber, 110: driver laser light source, 120, 120A to 120E: target injection part, 121: main body part, 121A: tip part, 121B: storage part, 121C: injection path part 122: Nozzle part, 122B: Nozzle, 123: Electrode part, 125: Heating part, 130: EUV collector mirror, 200: Target material, 201: Droplet, 202: Plasma, 300: EUV light source controller, 310: Drop Let controller, 320: Pulse controller, 320A: DC voltage controller, 330, 330A: Pressure controller, 331: Pressure controller, 350: Pressurizer, 400, 400A: Piezo element, 600: Pre-pulse laser, 1000, 1000H -1000K: target supply device.

Claims (20)

1. A main body for accommodating the target material;
   A nozzle part connected to the body part for outputting the target material as a target;
   An electrode portion provided to face the nozzle portion;
   A voltage control unit that applies a predetermined voltage between the electrode unit and the target material to generate an electrostatic force for extracting the target material from the nozzle unit;
   A pressure control unit for applying a predetermined pressure to the target material;
   A first timing signal for applying the predetermined voltage between the target material and the electrode unit by the voltage control unit at a first timing; and the predetermined pressure is applied to the target material by the pressure control unit. An output control unit for outputting the target from the nozzle unit by controlling a signal output timing with a second timing signal to be added at two timings;
   A target output device comprising:
   
2. The output control unit instructs the voltage control unit to specify the value of the predetermined voltage and a first time during which the predetermined voltage is applied, and instructs the pressure control unit to determine the value of the predetermined pressure and the predetermined value. Indicating a second time to apply pressure,
   The target output device according to claim 1.
   
3. The output control unit, based on the output volume per unit time of the target and the generation frequency of the target, the value of the predetermined voltage and the first time, the value of the predetermined pressure and the second time The target output device according to claim 2, wherein:
   
4. The nozzle part is provided so as to protrude in the direction of outputting the target in order to increase the electric field strength applied to the target material located in the vicinity of the output port of the nozzle part,
   The voltage control unit applies the predetermined voltage so that a voltage applied to the electrode unit is relatively lower than a voltage applied to the target material;
   The target output device according to claim 1.
   
5. The target output device according to claim 1, wherein the pressure control unit applies the predetermined pressure to the target material by supplying an inert gas into the main body.
   
6. The target output device according to claim 1, wherein the pressure control unit applies the predetermined pressure to the target material by mechanically deforming a piezo element provided in the middle of a passage portion through which the target material flows.
   
7. The target output device according to claim 6, wherein the piezo element is located in the middle of the passage portion and provided outside the wall portion of the passage portion.
   
8. The target material is tin or a metal substance containing tin,
   The main body portion is provided with a heating portion for heating the target material to a melting point or higher,
   2. The target output device according to claim 1, wherein heat from the heating unit is conducted through the main body unit, so that the target material in the nozzle unit maintains a molten state.
   
9. The output control unit discretely outputs the target from the nozzle unit by holding the predetermined voltage for the first time and holding the predetermined pressure for the second time. Item 3. The target output device according to Item 2.
   
10. The target output according to claim 2, wherein the output control unit discretely outputs the target from the nozzle unit by changing at least one of the predetermined voltage or the predetermined pressure in a pulse shape. apparatus.
    
11. An extreme ultraviolet light source device for generating extreme ultraviolet light by irradiating a target with laser light,
    A chamber;
    A target output device that outputs the target toward a predetermined point in the chamber;
    A laser light source that emits extreme ultraviolet light by irradiating the target with laser light;
    With
    The target output device is:
    A main body for accommodating the target material;
    A nozzle part connected to the body part for outputting the target material as the target;
    An electrode portion provided to face the nozzle portion;
    A voltage control unit that applies a predetermined voltage between the electrode unit and the target material to generate an electrostatic force for extracting the target material from the nozzle unit;
    A pressure control unit for applying a predetermined pressure to the target material;
    The voltage control unit controls a first timing at which the predetermined voltage is applied between the target material and the electrode unit, and a second timing at which the pressure control unit applies the predetermined pressure to the target material. An output control unit for outputting the target from the nozzle unit;
    An extreme ultraviolet light source device.
    
12. The output control unit instructs the voltage control unit to specify the value of the predetermined voltage and a first time during which the predetermined voltage is applied, and instructs the pressure control unit to determine the value of the predetermined pressure and the predetermined value. Indicating a second time to apply pressure,
    The extreme ultraviolet light source device according to claim 11.
    
13. The output control unit, based on the output volume per unit time of the target and the generation frequency of the target, the value of the predetermined voltage and the first time, the value of the predetermined pressure and the second time The extreme ultraviolet light source device according to claim 12, wherein:
    
14. The nozzle part is provided so as to protrude in the direction of outputting the target in order to increase the electric field strength applied to the target material located in the vicinity of the output port of the nozzle part,
    The voltage control unit applies the predetermined voltage so that a voltage applied to the electrode unit is relatively lower than a voltage applied to the target material;
    The extreme ultraviolet light source device according to claim 11.
    
15. The extreme ultraviolet light source device according to claim 11, wherein the pressure control unit applies the predetermined pressure to the target material by supplying an inert gas into the main body.
    
16. The extreme ultraviolet light source device according to claim 11, wherein the pressure control unit applies the predetermined pressure to the target material by mechanically deforming a piezo element provided in the middle of a passage portion through which the target material flows. .
    
17. 17. The extreme ultraviolet light source device according to claim 16, wherein the piezo element is provided in the middle of the passage portion so as to surround a wall portion of the passage portion from the outside.
    
18. The target material is tin or a metal substance containing tin,
    The main body portion is provided with a heating portion for heating the target material to a melting point or higher,
    The extreme ultraviolet light source device according to claim 11, wherein heat from the heating unit is conducted to the nozzle unit through the main body unit, whereby the target material in the nozzle unit maintains a molten state.
    
19. The output control unit discretely outputs the target from the nozzle unit by holding the predetermined voltage for the first time and holding the predetermined pressure for the second time. Item 13. The extreme ultraviolet light source device according to Item 12.
    
20. 3. The extreme ultraviolet according to claim 2, wherein the output control unit discretely outputs the target from the nozzle unit by changing at least one of the predetermined voltage or the predetermined pressure in a pulse shape. 4. Light source device.

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