WO2010130235A3 - Procédé de métallisation d'éléments de contact en forme de bandes - Google Patents

Procédé de métallisation d'éléments de contact en forme de bandes Download PDF

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Publication number
WO2010130235A3
WO2010130235A3 PCT/DE2010/000374 DE2010000374W WO2010130235A3 WO 2010130235 A3 WO2010130235 A3 WO 2010130235A3 DE 2010000374 W DE2010000374 W DE 2010000374W WO 2010130235 A3 WO2010130235 A3 WO 2010130235A3
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WO
WIPO (PCT)
Prior art keywords
contact
strip
sintering
shaped contact
shaped
Prior art date
Application number
PCT/DE2010/000374
Other languages
German (de)
English (en)
Other versions
WO2010130235A2 (fr
Inventor
Frank Osterwald
Jacek Rudzki
Ronald Eisele
Original Assignee
Danfoss Silicon Power Gmbh
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Filing date
Publication date
Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Publication of WO2010130235A2 publication Critical patent/WO2010130235A2/fr
Publication of WO2010130235A3 publication Critical patent/WO2010130235A3/fr

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Powder Metallurgy (AREA)
  • Die Bonding (AREA)

Abstract

Procédé de métallisation d'un élément semiconducteur destiné à l'électronique de puissance et comportant un élément de contact en forme de bande qui est fixé à l'élément semiconducteur par frittage sous pression. Selon l'invention, l'élément de contact en forme de bande est une ligne de contact en bande tressée à partir d'une pluralité de fils métalliques torsadés, les fils torsadés sont imprégnés par trempage de leurs extrémités réceptrices des contacts dans une pâte de frittage humide, le frittage sous pression est effectué au moyen d'un poinçon soumis à une certaine température qui effectue le frittage par points de la zone de contact, sous pression et à une température donnée.
PCT/DE2010/000374 2009-05-11 2010-04-12 Procédé de métallisation d'éléments de contact en forme de bandes WO2010130235A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009020733A DE102009020733B4 (de) 2009-05-11 2009-05-11 Verfahren zur Kontaktsinterung von bandförmigen Kontaktelementen
DE102009020733.3 2009-05-11

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WO2010130235A2 WO2010130235A2 (fr) 2010-11-18
WO2010130235A3 true WO2010130235A3 (fr) 2011-07-28

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JP5863602B2 (ja) * 2011-08-31 2016-02-16 三菱電機株式会社 電力用半導体装置
DE102012200278A1 (de) * 2012-01-11 2013-07-11 Robert Bosch Gmbh Leistungshalbleiter mit einem Drahtbündelanschluss
DE102012221396A1 (de) * 2012-11-22 2014-06-05 Robert Bosch Gmbh Anordnung für elektronische Baugruppen mit einer Verbindungsschicht mit einer Gradientenstruktur und/oder mit Abrundungen im Eckbereich
DE102014104272A1 (de) * 2014-03-26 2015-10-01 Heraeus Deutschland GmbH & Co. KG Träger und Clip jeweils für ein Halbleiterelement, Verfahren zur Herstellung, Verwendung und Sinterpaste
CN106133896B (zh) * 2014-04-04 2018-12-04 三菱电机株式会社 半导体模块
DE102015103779A1 (de) * 2015-03-16 2016-09-22 Pac Tech-Packaging Technologies Gmbh Chipanordnung und Verfahren zur Ausbildung einer Kontaktverbindung
DE102016108000B3 (de) * 2016-04-29 2016-12-15 Danfoss Silicon Power Gmbh Verfahren zum stoffschlüssigen Verbinden einer ersten Komponente eines Leistungshalbleitermoduls mit einer zweiten Komponente eines Leistungshalbleitermoduls
DE102018119331B4 (de) * 2018-08-08 2024-07-25 Endress+Hauser Flowtec Ag Herstellungsverfahren einer Spulenvorrichtung, Spulenvorrichtung, Messaufnehmer mit Spulenvorrichtung, Messgerät mit einem Messaufnehmer
EP3926675A1 (fr) 2020-06-19 2021-12-22 Heraeus Nexensos GmbH Liaison stable à la température d'un fil toronné avec un plot agpt

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