WO2010117330A1 - Dispositif photovoltaïque, et son procede de fabrication - Google Patents

Dispositif photovoltaïque, et son procede de fabrication Download PDF

Info

Publication number
WO2010117330A1
WO2010117330A1 PCT/SE2010/050387 SE2010050387W WO2010117330A1 WO 2010117330 A1 WO2010117330 A1 WO 2010117330A1 SE 2010050387 W SE2010050387 W SE 2010050387W WO 2010117330 A1 WO2010117330 A1 WO 2010117330A1
Authority
WO
WIPO (PCT)
Prior art keywords
shell
core
piezoelectric
crystalline
nanowire
Prior art date
Application number
PCT/SE2010/050387
Other languages
English (en)
Inventor
Fredrik Boxberg
Original Assignee
Fredrik Boxberg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fredrik Boxberg filed Critical Fredrik Boxberg
Publication of WO2010117330A1 publication Critical patent/WO2010117330A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/081—Shaping or machining of piezoelectric or electrostrictive bodies by coating or depositing using masks, e.g. lift-off
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Figure 2c is another schematic illustration of a true core shape
  • Figure 8 illustrates theoretical field strength in various material combinations (zinc blende crystalline materials) in a [111] -oriented nanowire with core-shell according to an embodiment
  • Figures 13a to 13f show the elastic strain on a cross section of embodiments of a core-shell nanowires
  • Figure 17b shows schematically the symmetry and principal crystal axes of the [0001] oriented wurtzite material with respect to the nanowire geometry, according to one embodiment of the present invention
  • nanowires and nanowire heterostructures enables thereby the combination of lattices and materials, which are less alike than what is possible during the growth of planar structures.
  • ⁇ u c ljM E ⁇ M - e k i j E k (summing over j , and k)
  • D 1 C 1J k S J k + ⁇ u s E j
  • ⁇ the stress tensor
  • c E the elastic stiffness tensor
  • ⁇ the strain tensor
  • e the piezoelectric tensor
  • E the electric field
  • D the electric displacement
  • ⁇ s is the dielectric tensor. If a piezoelectric material is strained, i.e. 8 M ⁇ 0, this will in general induce an electric field Ek ⁇ 0.
  • this electric field is used for the separation of photon generated electron-hole pairs.
  • a core-shell geometry of dissimilar crystalline materials there will be an elastic strain due to the lattice mismatch between the crystal of the core and the shell or between different shells. This elastic strain induces also an electric field in the structure as described above.
  • a core-shell wire comprises wurtzite crystalline materials with different lattice constants.
  • the axis of the wire is aligned in parallel with a [0001] direction (also referred to as the c-axis) of the wurtzite crystalline materials. This will induce a strain in the wire, which induce a non-zero component of the piezoelectric field along the axis of the wire.
  • a planar structure comprises two thin sheets of zinc blende crystalline materials with different lattice constants.
  • the orientation of the sheets is such that a [H I] crystal direction of the zinc blende crystalline materials lies within the plane of the sheets. This will induce a strain in both sheets, which induces a non-zero component of the piezoelectric field within the plane of the sheets.
  • FIG. 3a illustrates the device 10 according to an embodiment.
  • the device comprises a nanowire 10 connected at a first longitudinal end to a first electrical contact 31 and at a second longitudinal end to a substrate 32.
  • the second longitudinal end of the nanowire 10 is connected to a first side of the substrate 32.
  • On a second side of the substrate the second electrical contact 33 is connected.
  • the first and second electrical contact 31, 33 of the device may be connected to a resistance or load 34 by leads 35, 36, respectively.
  • Non-uniform sheet geometry may for example be achieved by arranging strips of contact material onto the ends of the nanowires. Other patterns than strips are also possible, such as nets, within the scope of the present invention.
  • Non-uniform sheet geometry of contact 33 allows for increased permeability of photons.
  • the diameter is in the interval of 1 to 10 ⁇ m.
  • the robustness of the device is increased and the polarization dependence of the photon harvesting decreases. In this respect it is believed that the polarization dependence can be overcome in solar cell applications by regulation of the device design.
  • the nanowire is manufactured such that the diameter falls within this interval of thick/large diameters some advantages may be obtained. Making electrical contacts may become easier.
  • the dielectric material between the nanowires may in certain instances be omitted.
  • the device comprises two or more shells of different crystalline or poly-crystalline semiconducting materials.
  • Figure 7a illustrates such a device.
  • An additional inner shell 71 in accordance with Fig. 7b, which is a cross section of a device according to one embodiment, may be deposited onto the core 11 by using e.g. liquid phase epitaxy, vapor phase epitaxy, or molecular beam epitaxy, which methods are known to the skilled artisan.
  • the shell 12 of the second material is deposited by using e.g. liquid phase epitaxy, vapor phase epitaxy, or molecular beam epitaxy. In this way a radial heterostructure is obtained within the shell
  • the segment 72 is of a material having a band gap energy in the interval of 1.7 to 1.9 eV
  • the segment 74 is of a material having a band gap energy in the interval of 1.2 to 1.3 eV
  • the segment 75 is of a material having a band gap energy in the interval of 0.6 to 0.8 eV.
  • the second material can be any semiconductor or an insulator with a crystalline structure.
  • the second material may also be a material with piezoelectric property.
  • Such suitable material for the second material can for example be selected from the group comprising Si, Ge, C, SiGe, BN, BP, BAs, BSb, AlN, AlP, AlAs, GaN, GaP, GaAs, GaSb, InN, 5 InP, InAs, InSb, AlGaAs, InGaAs, AlGaAsP, GaAsP, ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MnTe, and SiC. Note that Si, Ge and C do not have piezoelectric properties.
  • the properties, and in particular the magnitude of the piezoelectric 5 field, of a core-shell nanowire depends on the orientation of it with respect to the crystal lattice as a result of the anisotropic stiffness, piezoelectric and dielectric tensors. This applies to both zinc blende and wurtzite nanowires.
  • the main parameters are change of materials, and the radii of the core and the shells, with respect to each other.
  • the device may be used as a photon detector for a wide variety of spectral bands - ranging from deep infrared electromagnetic radiation to ultraviolet electromagnetic radiation.
  • the underlying material should be selected from the point of view of the band gap.
  • a semiconductor can also absorb photons of energies greater than the band gap energy of the semiconductor.
  • a material with a small band gap is thereby suitable for absorption of infra-red light.
  • a material with a larger band gap is on the contrary suitable for absorption of (ultra) violet light.
  • the exact absorption rate and spectrum are also modified by strain and quantum confinement.
  • the quantum confinement blue-shifts the absorption spectrum.
  • a compressive (tensile) strain typically blue-shifts (red-shifts) the absorption spectrum of a III-V compound semiconductor.
  • the wavelength ⁇ of light is given by
  • the piezoelectric device the first and the second material may be configured into a sheet geometry, in accordance with figure 11.
  • the device consists of a first and a second sheet 111, 112.
  • the first and the second sheet 111, 112 are parallel and epitaxially connected.
  • the first sheet 111 may be a rigid substrate onto which the other sheet is grown using e.g. vapor phase epitaxy, liquid phase epitaxy or molecular beam epitaxy.
  • the orientation of the first and the second zinc blende crystalline materials 111, 112 is such that the interface between the two sheets is perpendicular to the [-1 0 1] crystal direction.
  • the first sheet 111 may be called a [-1 0 1] oriented substrate.
  • Figure 14 shows the transversal component (x/y component) of the piezoelectric field at a cross section of an InAs/InP core-shell nanowire.
  • the nanowire consists of an InAs core and an InP shell, both materials being in the zinc blende crystal phase and the axis of the wire (equals to the Z axis) being aligned with the [111] crystal direction.
  • the magnitude of the arrow is proportional to the magnitude of the piezoelectric field.
  • the maximum absolute value of the piezoelectric field is in Figure 13 approximately (Ex2/Ey2) 1/2 ⁇ 13 mV/nm.
  • the longitudinal component Ez of the piezoelectric field is constant at the whole cross section of the nanowire.
  • Figure 15 shows the piezoelectric field in a QD WZ structure with the isopotential lines included.
  • Figures 18a and 18b show the piezoelectric potential, in terms of isosurfaces for selected values of the potential, in a ZB and a WZ phase core-shell heterostructure.
  • the axial component Ez of the piezoelectric field is constant everywhere within the radial heterostructures and far from the ends of the nanowire.
  • the corresponding isosurfaces of the potential are therefore flat.
  • the ZB heterostructure does, however, induce a nonvanishing electric field within the xy plane as well and the isosurfaces of the potential are correspondingly nonplanar for the ZB heterostructure. These isosurfaces are saddle surfaces with three maxima and three minima.
  • the saddle surfaces of the potential in a ZB core-shell nanowire is expected to induce a channeling of electron and hole currents into different areas of the nanowire. This means that the electrons and holes, which are drifting along the axis of the nanowire, are also separated in the cross sectional xy plane by the piezoelectric field. This is expected to reduce the electron-hole recombination in a favorable way.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un dispositif électronique à semi-conducteurs comportant des nanofils avec un champ piézoélectrique incorporé. Les nanofils servent à la collecte de photons, un champ piézoélectrique incorporé dans les nanofils étant substitué à une jonction PN, qui est utilisée dans des cellules photovoltaïques classiques. Le champ piézoélectrique est induit par la combinaison de matériaux à réseaux moléculaires à désalignement axial en une géométrie noyau/enveloppe.
PCT/SE2010/050387 2009-04-09 2010-04-09 Dispositif photovoltaïque, et son procede de fabrication WO2010117330A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
SE0950236-0 2009-04-09
SE0950236 2009-04-09
US21563709P 2009-05-08 2009-05-08
US61/215,637 2009-05-08
SE0950940 2009-12-07
SE0950940-7 2009-12-07

Publications (1)

Publication Number Publication Date
WO2010117330A1 true WO2010117330A1 (fr) 2010-10-14

Family

ID=42936437

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SE2010/050387 WO2010117330A1 (fr) 2009-04-09 2010-04-09 Dispositif photovoltaïque, et son procede de fabrication

Country Status (1)

Country Link
WO (1) WO2010117330A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015073023A (ja) * 2013-10-03 2015-04-16 シャープ株式会社 光検知素子
TWI644436B (zh) * 2013-10-31 2018-12-11 國立大學法人北海道大學 Ｉｉｉ－ｖ族化合物半導體奈米線、場效電晶體以及開關元件
WO2019092426A1 (fr) * 2017-11-08 2019-05-16 University Of Lancaster Dispositifs photosensibles
EP3509115A4 (fr) * 2016-08-31 2019-09-18 Nissan Motor Co., Ltd. Dispositif photovoltaïque
CN110705076A (zh) * 2019-09-25 2020-01-17 哈尔滨理工大学 一种求解具有任意属性的功能梯度压电材料断裂问题的方法
CN111564549A (zh) * 2020-02-24 2020-08-21 宁波工程学院 一种SiC/ZnO纳米异质结压力传感器及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020058349A1 (en) * 2000-09-27 2002-05-16 Khan Mohammad Asif Method of producing nitride-based heterostructure devices
WO2006046177A2 (fr) * 2004-10-27 2006-05-04 Koninklijke Philips Electronics N.V. Dispositif a semiconducteur comprenant une bande d'energie interdite accordable
WO2007146769A2 (fr) * 2006-06-13 2007-12-21 Georgia Tech Research Corporation Nano-piézoélectronique
US20080156366A1 (en) * 2006-12-29 2008-07-03 Sundiode, Inc. Solar cell having active region with nanostructures having energy wells

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020058349A1 (en) * 2000-09-27 2002-05-16 Khan Mohammad Asif Method of producing nitride-based heterostructure devices
WO2006046177A2 (fr) * 2004-10-27 2006-05-04 Koninklijke Philips Electronics N.V. Dispositif a semiconducteur comprenant une bande d'energie interdite accordable
WO2007146769A2 (fr) * 2006-06-13 2007-12-21 Georgia Tech Research Corporation Nano-piézoélectronique
US20080156366A1 (en) * 2006-12-29 2008-07-03 Sundiode, Inc. Solar cell having active region with nanostructures having energy wells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SONDERGAARD N. ET AL: "Strain distributions in lattice-mismatched semiconductor core-shell nanowires", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, vol. 27, no. 2, 2009, pages 827 - 830, XP012129199 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015073023A (ja) * 2013-10-03 2015-04-16 シャープ株式会社 光検知素子
TWI644436B (zh) * 2013-10-31 2018-12-11 國立大學法人北海道大學 Ｉｉｉ－ｖ族化合物半導體奈米線、場效電晶體以及開關元件
US10403498B2 (en) 2013-10-31 2019-09-03 National University Corporation Hakkaido University Group III-V compound semiconductor nanowire, field effect transistor, and switching element
EP3509115A4 (fr) * 2016-08-31 2019-09-18 Nissan Motor Co., Ltd. Dispositif photovoltaïque
WO2019092426A1 (fr) * 2017-11-08 2019-05-16 University Of Lancaster Dispositifs photosensibles
CN110705076A (zh) * 2019-09-25 2020-01-17 哈尔滨理工大学 一种求解具有任意属性的功能梯度压电材料断裂问题的方法
CN111564549A (zh) * 2020-02-24 2020-08-21 宁波工程学院 一种SiC/ZnO纳米异质结压力传感器及其制备方法
CN111564549B (zh) * 2020-02-24 2021-01-29 宁波工程学院 一种SiC/ZnO纳米异质结压力传感器及其制备方法

Similar Documents

Publication Publication Date Title
Otnes et al. Towards high efficiency nanowire solar cells
KR102143666B1 (ko) 태양전지
KR101335193B1 (ko) 무기 매트릭스에 임베딩된 터널링 장벽을 갖는 양자점을가진 중간대 감광성 장치
KR101683095B1 (ko) 고효율 나노구조 광전지 소자 제조
US9263612B2 (en) Heterojunction wire array solar cells
WO2010117330A1 (fr) Dispositif photovoltaïque, et son procede de fabrication
KR20120103762A (ko) 에피택셜 리프트오프를 이용한 플렉시블 광기전 디바이스의 제조 방법 및 에피택셜 성장에 사용되는 성장 기판의 무결성의 보존 방법
US20120199187A1 (en) Nanowire tunnel diode and method for making the same
Spies et al. Nanowire photodetectors based on wurtzite semiconductor heterostructures
WO2009049087A2 (fr) Piles solaires à points quantiques de type ii
Marti et al. Intermediate band solar cells
US9240507B2 (en) Intermediate band solar cell using type I and type II quantum dot superlattices
US20160204283A1 (en) Photovoltaic cell and method of fabricating the same
US20140026937A1 (en) Semiconductor Heterostructure and Photovoltaic Cell Including Such A Heterostructure
Gao et al. Recent advances in Sb-based III–V nanowires
US20150037925A1 (en) Method of fabricating a superlattice structure
Ren et al. Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications
KR20140032499A (ko) 다중 양자 우물형 태양 전지 및 다중 양자 우물형 태양 전지의 제조 방법
Kharel et al. Band structure and absorption properties of (Ga, In)/(P, As, N) symmetric and asymmetric quantum wells and super-lattice structures: Towards lattice-matched III-V/Si tandem
Goodnick et al. Solar cells
Micha et al. Nanostructured materials for high efficiency solar cells
Welser et al. The physics of high-efficiency thin-film III-V solar cells
Giannoccaro et al. Analysis and simulation of superlattice GaN/InGaN pin solar cells
Vu Nanowire photoluminescence for photovoltaics
JP6036833B2 (ja) 太陽電池及びその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10761940

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10761940

Country of ref document: EP

Kind code of ref document: A1