WO2010110423A1 - 圧電磁歪複合型磁気センサ - Google Patents
圧電磁歪複合型磁気センサ Download PDFInfo
- Publication number
- WO2010110423A1 WO2010110423A1 PCT/JP2010/055371 JP2010055371W WO2010110423A1 WO 2010110423 A1 WO2010110423 A1 WO 2010110423A1 JP 2010055371 W JP2010055371 W JP 2010055371W WO 2010110423 A1 WO2010110423 A1 WO 2010110423A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- magnetic sensor
- piezoelectric
- magnetostrictive
- film
- based alloy
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
- G01R33/18—Measuring magnetostrictive properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/101—Magnetostrictive devices with mechanical input and electrical output, e.g. generators, sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/80—Constructional details
- H10N35/85—Magnetostrictive active materials
Definitions
- the present invention relates to a magnetic sensor used for detecting minute fluctuations in a magnetic field, and more particularly, to a piezoelectric / electrostrictive combined magnetic sensor combining a piezoelectric effect and a magnetostriction phenomenon.
- Hall sensors using the Hall effect have been widely used as representative magnetic sensors, and a wide variety of magnetic sensors have been selected and used according to the purpose.
- Patent Document 1 discloses a magnetic sensor in which a magnetostrictive element and a piezoelectric element are bonded together. .
- the basic principle of the magnetic sensor disclosed in Patent Document 1 is to detect a change in shape of the magnetostrictive element due to an external magnetic field change as a voltage generated in a piezoelectric element integrated with the magnetostrictive element.
- the voltage generated by the displacement of the piezoelectric element in response to the stress at the time of magnetostriction change of the magnetostrictive element is detected, and the magnetic sensitivity of the magnetic sensor depends on the voltage generated in the piezoelectric element.
- Patent Document 2 discloses a magnetic sensor including a sensor structure in which a magnetostrictive thin film formed by using a film formation technique such as sputtering is stacked on a support substrate.
- the basic principle of the magnetic sensor disclosed in Patent Document 2 is that the resonance frequency of the sensor structure that changes with an external magnetic field change when the sensor structure is mechanically vibrated integrally.
- the amount of external magnetic field is calculated from the amount of change.
- the magnitude of the generated voltage related to the magnetic sensitivity is determined by the piezoelectric or magnetostrictive characteristics, size, rigidity, etc. of each element, so the size is reduced. It is difficult to satisfy high sensitivity at the same time.
- the magnetic field region having superiority differs depending on the type of magnetostrictive element used.
- the material of the magnetostrictive element a so-called giant magnetostrictive material having a large strain rate is considered suitable, but there is a problem that it is expensive because it usually contains rare earth elements.
- the adhesive becomes a buffer material, which may reduce the magnetoelectric conversion efficiency. Further, depending on the use conditions, there is a possibility of peeling from the bonded portion.
- the invention according to claim 1 is characterized in that a magnetostrictive film made of an Fe-based alloy is formed on at least one surface of a piezoelectric substrate, and a piezoelectric / electrostrictive composite type magnetism is provided. A sensor was used.
- a piezoelectric / electrostrictive combined magnetic sensor characterized in that a magnetostrictive film made of an Fe-based alloy containing Pd is formed on at least one surface of a piezoelectric substrate. .
- a piezoelectric / electrostrictive combined magnetic sensor characterized in that a magnetostrictive film made of an Fe-based alloy containing Ga is formed on at least one surface of a piezoelectric substrate. .
- a combined piezoelectric / electrostrictive magnetic sensor characterized in that a magnetostrictive film made of an Fe-based alloy containing Co is formed on at least one surface of a piezoelectric substrate. .
- a piezoelectric magnetostriction in which a laminated film of two or more types of Fe-based alloys having different compositions is formed on at least one surface of a piezoelectric substrate. A composite magnetic sensor was obtained.
- a laminated film of a magnetostrictive film made of an Fe-based alloy containing Pd and a magnetostrictive film made of an Fe-based alloy containing Co is formed on at least one surface of the piezoelectric substrate.
- a laminated film of a magnetostrictive film made of an Fe-based alloy containing Ga and a magnetostrictive film made of an Fe-based alloy containing Co is formed on at least one surface of the piezoelectric substrate.
- the piezoelectric magnetostrictive magnetic sensor according to any one of the first to seventh aspects, wherein a magnetostrictive film is formed on both surfaces of the piezoelectric substrate.
- a magnetostrictive composite magnetic sensor was obtained.
- a magnetostrictive film can be formed on a piezoelectric substrate using a magnetostrictive material of an Fe-based alloy, and a highly sensitive magnetic sensor that can be reduced in size can be realized at low cost with a simple configuration. Can do.
- the power consumption of the magnetic sensor element is zero.
- Ga is more readily available than Pd and the like, and even when the composition ratio to Fe is about 10 to 20%, a sufficient amount of magnetostriction is obtained. Therefore, a highly sensitive magnetic sensor can be obtained at a lower cost.
- the magnetostrictive films made of two or more kinds of Fe-based alloys having different compositions are laminated and formed on the piezoelectric substrate, thereby combining the characteristic advantages of the magnetostrictive material with each composition.
- a magnetic sensor can be obtained.
- the strain of the magnetic sensor at the time of magnetic detection is in the bending direction, whereas the magnetostrictive film is formed on both surfaces of the piezoelectric substrate.
- the magnetostrictive film is formed on both surfaces of the piezoelectric substrate.
- the best mode is one in which a magnetostrictive material made of an Fe-based alloy containing any of Pd, Ga, and Co is formed on a substrate made of a piezoelectric material.
- the piezoelectric / electrostrictive composite type magnetic sensor having the above characteristics can be obtained.
- an alloy containing 27 to 32 atomic% of Pd is desirable. As shown in the phase diagram of FIG. 1, an Fe-based alloy containing 27 to 32 atomic percent of Pd has a face-centered tetragonal structure (FCT) in which a magnetic field-induced martensitic twin phase transformation occurs, and thus exhibits large magnetostriction. Therefore, a highly sensitive magnetic sensor can be realized.
- FCT face-centered tetragonal structure
- FIG. 2 shows a piezoelectric / electrostrictive composite magnetic sensor 1 according to this embodiment, which has a structure in which a magnetostrictive film M is formed on both surfaces of a piezoelectric ceramic substrate P.
- An iron-based magnetostrictive material having the following composition is formed on each of the three piezoelectric ceramic substrates.
- An RF magnetron sputtering apparatus was used for forming the magnetostrictive film. Film formation was performed with an RF power density of 2.2 W / cm 2 and a gas pressure of 0.2 to 1 Pa. In order to give the magnetostrictive film magnetic anisotropy, the film was formed by applying a magnetic field of about 100 Oe.
- the conditions relating to the manufacture and measurement of the magnetic sensor are the same as the conditions in Example 1.
- FIG. 6 shows the piezoelectric / electrostrictive composite magnetic sensor 2 according to this embodiment, which has a structure in which two types of magnetostrictive films Mp and Mc having different compositions are formed on both surfaces of a piezoelectric ceramic substrate P.
- a Fe-30at% Pd magnetostrictive film Mp is formed with a thickness of 2 ⁇ m on both sides, and a Fe-50at% Co magnetostrictive film Mc is formed on it with a thickness of 2 ⁇ m. Filmed.
- Conditions relating to the manufacture and measurement of the magnetic sensor other than the magnetostrictive film having a laminated structure are the same as those in the first embodiment.
- FIG. 7 is a graph showing the output voltage of the magnetic sensor with respect to the magnitude of each magnetic field.
- a laminated film of Fe-30at% Pd and Fe-50at% Co was formed on the piezoelectric ceramic substrate P according to this example. The sample output and the output results when Fe-30at% Pd is formed as a single layer and when Fe-50at% Co is formed as a single layer are shown.
- Example 4 a sample was prepared in which a laminated film of a Fe-20at% Ga film and a Fe-50at% Co film was formed on a piezoelectric ceramic substrate.
- the conditions for the manufacture and measurement of the magnetic sensor are the same as those of Example 3, except that the Fe-30at% Pd film is a 2 ⁇ m thick Fe-20at% Ga film.
- FIG. 8 is a graph showing the output voltage of the magnetic sensor with respect to the magnitude of each magnetic field.
- a laminated film of Fe-20at% Ga and Fe-50at% Co was formed on the piezoelectric ceramic substrate P according to this example. The sample output and the output results when Fe-20at% Ga is formed as a single layer and when Fe-50at% Co is formed as a single layer are shown.
- Example 5 the linearity of the magnetic sensor using the Fe-30at% Pd thin film was verified.
- the gain of the charge amplifier is 500mV / pC.
- FIG. 9 is a graph showing the output voltage with respect to the applied magnetic field according to this embodiment. From this result, it was found that the linearity of the magnetic sensor is less than 1% and has excellent linearity.
- Example 6 the temperature characteristics of the magnetic sensor using the Fe-30at% Pd thin film were verified.
- the sample is the same as in Example 5.
- FIG. 10 is a graph showing the output voltage in the temperature range of ⁇ 40 to + 120 ° C. according to this example.
- the output voltage on the vertical axis is 100% when the measurement start temperature is 22 ° C. From this result, it was found that the temperature coefficient of the output voltage is 0.8 mV / ° C. and has a linear characteristic.
- the present invention is not limited to the above-described embodiments, and various modifications can be employed within the scope of the present invention.
- the type, size, and shape of the piezoelectric element, the film forming range of the magnetostrictive material, the film forming thickness, the combination of stacked films, the number of stacked layers, and the like can be appropriately selected depending on the application.
- the piezoelectric / electrostrictive composite type magnetic sensor of the present invention has a simple structure, good mechanical workability, can be processed into any size, and can detect a wide range of magnetic fields. It can be employed in any device that requires magnetic detection, such as an encoder or a torque sensor for automobiles.
- FIG. 3 is a phase diagram of an Fe—Pd alloy.
- 1 is a structural diagram of a piezoelectric / electrostrictive composite magnetic sensor according to an embodiment of the present invention. It is a measurement block diagram of the output voltage of the magnetic sensor concerning the Example of this invention. It is a graph which shows the output characteristic of the magnetic sensor regarding the Example of this invention. It is a graph which shows the output characteristic of the magnetic sensor regarding the Example of this invention. 1 is a structural diagram of a piezoelectric / electrostrictive composite magnetic sensor according to an embodiment of the present invention. It is a graph which shows the output characteristic of the magnetic sensor regarding the Example of this invention. It is a graph which shows the output characteristic of the magnetic sensor regarding the Example of this invention. It is a graph which shows the output characteristic of the magnetic sensor regarding the Example of this invention. It is a graph which shows the output characteristic of the magnetic sensor regarding the Example of this invention. It is a graph which shows the output characteristic of the magnetic sensor regarding the Example of this invention. It is a graph which shows
- Piezoelectrostrictive composite magnetic sensor (magnetostrictive film single layer) 2. Piezoelectric strain combined magnetic sensor (magnetostrictive film lamination) P Piezoelectric ceramic substrate M Magnetostrictive film Mp Magnetostrictive film (Fe-30at% Pd) Mc magnetostrictive film (Fe-50at% Co)
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Description
図2は、本実施例による圧電磁歪複合型磁気センサ1を示しており、圧電セラミックス基板Pの両面に磁歪膜Mを成膜した構造となっている。
(1)Fe-30atPd (2)Fe-20at%Ga (3)Fe-50at%Co
図3の測定ブロック図に示す構成により、磁歪材の組成が異なる各センサの出力電圧を測定した。磁場Hは空芯コイルを用い、正弦波の交流磁場H=170 Oe、周波数f=1 Hzを印加した。チャージアンプの利得は1.26 mV/pCである。
試料として、Fe-30at%Pd膜の膜厚t=2μmとt=10μmのものを用意した。
2 圧電磁歪複合型磁気センサ(磁歪膜積層)
P 圧電セラミックス基板
M 磁歪膜
Mp 磁歪膜(Fe-30at%Pd)
Mc 磁歪膜(Fe-50at%Co)
Claims (8)
- 圧電基板上の少なくとも一方の面に、
Fe系合金からなる磁歪膜を成膜したものであることを特徴とする
圧電磁歪複合型磁気センサ。
- 圧電基板上の少なくとも一方の面に、
Pdを含有したFe系合金からなる磁歪膜を成膜したものであることを特徴とする
圧電磁歪複合型磁気センサ。
- 圧電基板上の少なくとも一方の面に、
Gaを含有したFe系合金からなる磁歪膜を成膜したものであることを特徴とする
圧電磁歪複合型磁気センサ。
- 圧電基板上の少なくとも一方の面に、
Coを含有したFe系合金からなる磁歪膜を成膜したものであることを特徴とする
圧電磁歪複合型磁気センサ。
- 圧電基板上の少なくとも一方の面に、
組成の異なる2種類以上のFe系合金からなる磁歪膜の積層膜を成膜したものであることを特徴とする
圧電磁歪複合型磁気センサ。
- 圧電基板上の少なくとも一方の面に、
Pdを含有したFe系合金からなる磁歪膜と、
Coを含有したFe系合金からなる磁歪膜との積層膜を成膜したものであることを特徴とする
圧電磁歪複合型磁気センサ。
- 圧電基板上の少なくとも一方の面に、
Gaを含有したFe系合金からなる磁歪膜と、
Coを含有したFe系合金からなる磁歪膜との積層膜を成膜したものであることを特徴とする
圧電磁歪複合型磁気センサ。
- 請求項1~7のいずれかに記載の圧電磁歪複合型磁気センサにおいて、
圧電基板の両面上に磁歪膜を成膜したものであることを特徴とする
圧電磁歪複合型磁気センサ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011506144A JPWO2010110423A1 (ja) | 2009-03-26 | 2010-03-26 | 圧電磁歪複合型磁気センサ |
US13/258,269 US20120098530A1 (en) | 2009-03-26 | 2010-03-26 | Piezoelectric/magnetostrictive composite magnetic sensor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009076931 | 2009-03-26 | ||
JP2009-076931 | 2009-03-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010110423A1 true WO2010110423A1 (ja) | 2010-09-30 |
Family
ID=42781113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/055371 WO2010110423A1 (ja) | 2009-03-26 | 2010-03-26 | 圧電磁歪複合型磁気センサ |
Country Status (3)
Country | Link |
---|---|
US (1) | US20120098530A1 (ja) |
JP (1) | JPWO2010110423A1 (ja) |
WO (1) | WO2010110423A1 (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101305271B1 (ko) * | 2012-03-22 | 2013-09-06 | 한국기계연구원 | 자기전기 복합체 |
KR101447561B1 (ko) * | 2013-06-03 | 2014-10-10 | 한국기계연구원 | 에너지 하베스트 소자용 자기전기 복합재료 적층체 및 그 제조방법 |
CN104617215A (zh) * | 2015-01-09 | 2015-05-13 | 电子科技大学 | 一种可实现磁性薄膜磁矩非易失性取向的调制方法 |
JP2016500813A (ja) * | 2012-10-08 | 2016-01-14 | クリスティアン−アルブレヒツ−ウニヴェアズィテート ツー キールChristian−Albrechts−Universitaet zuKiel | 磁電センサ及び該センサの製造方法 |
JP2018523107A (ja) * | 2015-06-08 | 2018-08-16 | クリスティアン−アルブレヒツ−ウニヴェアズィテート ツー キールChristian−Albrechts−Universitaet zu Kiel | 周波数変換による磁電的な磁場測定 |
JP2019148503A (ja) * | 2018-02-27 | 2019-09-05 | Tdk株式会社 | 圧電磁歪複合型の磁界センサー及び磁気発電デバイス |
CN110729396A (zh) * | 2019-09-25 | 2020-01-24 | 郑州轻工业学院 | 一种具有自放大能力的磁电薄膜传感器 |
JP2021064733A (ja) * | 2019-10-16 | 2021-04-22 | Tdk株式会社 | 積層薄膜および電子デバイス |
JP2021064734A (ja) * | 2019-10-16 | 2021-04-22 | Tdk株式会社 | 電子デバイス用素子 |
CN113030796A (zh) * | 2021-03-10 | 2021-06-25 | 洛玛瑞芯片技术常州有限公司 | 一种磁传感器 |
WO2022065656A1 (ko) * | 2020-09-22 | 2022-03-31 | 동아대학교 산학협력단 | 다공성 자왜 전극이 적층된 자기전기 적층체의 제조방법 및 이로부터 제조되는 자기전기 적층체 |
KR20220152747A (ko) * | 2021-05-10 | 2022-11-17 | 동아대학교 산학협력단 | 자기전기 복합체의 제조방법 및 이에 의해 제조된 자기전기 복합체 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9371669B2 (en) * | 2009-05-22 | 2016-06-21 | John S. Berg | Remote-activation lock system and method |
WO2015102616A1 (en) * | 2013-12-31 | 2015-07-09 | Halliburton Energy Services, Inc. | Method and device for measuring a magnetic field |
US10095342B2 (en) | 2016-11-14 | 2018-10-09 | Google Llc | Apparatus for sensing user input |
US10001808B1 (en) | 2017-03-29 | 2018-06-19 | Google Llc | Mobile device accessory equipped to communicate with mobile device |
US10013081B1 (en) | 2017-04-04 | 2018-07-03 | Google Llc | Electronic circuit and method to account for strain gauge variation |
US10635255B2 (en) | 2017-04-18 | 2020-04-28 | Google Llc | Electronic device response to force-sensitive interface |
US10514797B2 (en) | 2017-04-18 | 2019-12-24 | Google Llc | Force-sensitive user input interface for an electronic device |
CN107356832B (zh) * | 2017-06-26 | 2019-11-08 | 郑州轻工业学院 | 一种磁电回旋器及其功率转换效率测量装置 |
CN108872714A (zh) * | 2018-08-08 | 2018-11-23 | 广州供电局有限公司 | 穿墙套管组件 |
US20210242394A1 (en) * | 2020-02-04 | 2021-08-05 | Massachusetts Institute Of Technology | Magnetoelectric heterostructures and related articles, systems, and methods |
CN114062978B (zh) * | 2021-11-15 | 2024-02-02 | 东南大学 | 一种基于压电隧道效应的mems磁场传感器及测量磁场方法 |
CN114114098B (zh) * | 2021-11-15 | 2023-12-29 | 东南大学 | 一种基于压电电子学的mems磁传感器及测量磁场方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06224485A (ja) * | 1993-01-26 | 1994-08-12 | Toshiba Corp | 磁歪アクチュエータ |
JPH0720140A (ja) * | 1993-06-30 | 1995-01-24 | Toshiba Corp | 角速度センサ |
WO2000013008A1 (fr) * | 1998-09-01 | 2000-03-09 | Mitsubishi Denki Kabushiki Kaisha | Appareil permettant d'effectuer des tests sans causer de dommages |
WO2004005842A1 (ja) * | 2002-07-05 | 2004-01-15 | Matsushita Electric Industrial Co., Ltd. | 読み取り装置とこれを用いた認証器 |
WO2004070408A1 (ja) * | 2003-02-04 | 2004-08-19 | Nec Tokin Corporation | 磁気センサ |
JP2005338031A (ja) * | 2004-05-31 | 2005-12-08 | Nec Tokin Corp | 磁気センサ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5631559A (en) * | 1993-03-05 | 1997-05-20 | Northeastern University | Method and apparatus for performing magnetic field measurements using magneto-optic kerr effect sensors |
US6121771A (en) * | 1998-08-31 | 2000-09-19 | International Business Machines Corporation | Magnetic force microscopy probe with bar magnet tip |
JP4814085B2 (ja) * | 2004-03-11 | 2011-11-09 | 独立行政法人科学技術振興機構 | 鉄系磁歪合金の製造方法 |
US7312558B2 (en) * | 2004-04-02 | 2007-12-25 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric element, ink jet head, angular velocity sensor, and ink jet recording apparatus |
-
2010
- 2010-03-26 US US13/258,269 patent/US20120098530A1/en not_active Abandoned
- 2010-03-26 WO PCT/JP2010/055371 patent/WO2010110423A1/ja active Application Filing
- 2010-03-26 JP JP2011506144A patent/JPWO2010110423A1/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06224485A (ja) * | 1993-01-26 | 1994-08-12 | Toshiba Corp | 磁歪アクチュエータ |
JPH0720140A (ja) * | 1993-06-30 | 1995-01-24 | Toshiba Corp | 角速度センサ |
WO2000013008A1 (fr) * | 1998-09-01 | 2000-03-09 | Mitsubishi Denki Kabushiki Kaisha | Appareil permettant d'effectuer des tests sans causer de dommages |
WO2004005842A1 (ja) * | 2002-07-05 | 2004-01-15 | Matsushita Electric Industrial Co., Ltd. | 読み取り装置とこれを用いた認証器 |
WO2004070408A1 (ja) * | 2003-02-04 | 2004-08-19 | Nec Tokin Corporation | 磁気センサ |
JP2005338031A (ja) * | 2004-05-31 | 2005-12-08 | Nec Tokin Corp | 磁気センサ |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101305271B1 (ko) * | 2012-03-22 | 2013-09-06 | 한국기계연구원 | 자기전기 복합체 |
JP2016500813A (ja) * | 2012-10-08 | 2016-01-14 | クリスティアン−アルブレヒツ−ウニヴェアズィテート ツー キールChristian−Albrechts−Universitaet zuKiel | 磁電センサ及び該センサの製造方法 |
KR101744107B1 (ko) * | 2012-10-08 | 2017-06-07 | 크리스티안-알브레히츠-우니버지태트 추 킬 | 자기전기 센서 및 자기전기 센서의 생산을 위한 방법 |
KR101447561B1 (ko) * | 2013-06-03 | 2014-10-10 | 한국기계연구원 | 에너지 하베스트 소자용 자기전기 복합재료 적층체 및 그 제조방법 |
CN104617215A (zh) * | 2015-01-09 | 2015-05-13 | 电子科技大学 | 一种可实现磁性薄膜磁矩非易失性取向的调制方法 |
CN104617215B (zh) * | 2015-01-09 | 2017-05-10 | 电子科技大学 | 一种可实现磁性薄膜磁矩非易失性取向的调制方法 |
JP2018523107A (ja) * | 2015-06-08 | 2018-08-16 | クリスティアン−アルブレヒツ−ウニヴェアズィテート ツー キールChristian−Albrechts−Universitaet zu Kiel | 周波数変換による磁電的な磁場測定 |
JP7095309B2 (ja) | 2018-02-27 | 2022-07-05 | Tdk株式会社 | 圧電磁歪複合型の磁界センサー及び磁気発電デバイス |
JP2019148503A (ja) * | 2018-02-27 | 2019-09-05 | Tdk株式会社 | 圧電磁歪複合型の磁界センサー及び磁気発電デバイス |
CN110729396A (zh) * | 2019-09-25 | 2020-01-24 | 郑州轻工业学院 | 一种具有自放大能力的磁电薄膜传感器 |
CN110729396B (zh) * | 2019-09-25 | 2022-09-16 | 郑州轻工业学院 | 一种具有自放大能力的磁电薄膜传感器 |
JP2021064734A (ja) * | 2019-10-16 | 2021-04-22 | Tdk株式会社 | 電子デバイス用素子 |
JP2021064733A (ja) * | 2019-10-16 | 2021-04-22 | Tdk株式会社 | 積層薄膜および電子デバイス |
JP7415425B2 (ja) | 2019-10-16 | 2024-01-17 | Tdk株式会社 | 積層薄膜および電子デバイス |
JP7428961B2 (ja) | 2019-10-16 | 2024-02-07 | Tdk株式会社 | 電子デバイス用素子 |
WO2022065656A1 (ko) * | 2020-09-22 | 2022-03-31 | 동아대학교 산학협력단 | 다공성 자왜 전극이 적층된 자기전기 적층체의 제조방법 및 이로부터 제조되는 자기전기 적층체 |
CN113030796A (zh) * | 2021-03-10 | 2021-06-25 | 洛玛瑞芯片技术常州有限公司 | 一种磁传感器 |
CN113030796B (zh) * | 2021-03-10 | 2022-10-25 | 洛玛瑞芯片技术常州有限公司 | 一种磁传感器 |
KR20220152747A (ko) * | 2021-05-10 | 2022-11-17 | 동아대학교 산학협력단 | 자기전기 복합체의 제조방법 및 이에 의해 제조된 자기전기 복합체 |
KR102512477B1 (ko) | 2021-05-10 | 2023-03-20 | 동아대학교 산학협력단 | 자기전기 복합체의 제조방법 및 이에 의해 제조된 자기전기 복합체 |
Also Published As
Publication number | Publication date |
---|---|
US20120098530A1 (en) | 2012-04-26 |
JPWO2010110423A1 (ja) | 2012-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2010110423A1 (ja) | 圧電磁歪複合型磁気センサ | |
Zhai et al. | Magnetoelectric laminate composites: an overview | |
Wan et al. | Magnetoelectric CoFe2O4–Pb (Zr, Ti) O3 composite thin films derived by a sol-gel process | |
Ryu et al. | Effect of the magnetostrictive layer on magnetoelectric properties in lead zirconate titanate/terfenol‐D laminate composites | |
Bichurin et al. | Theory of low-frequency magnetoelectric coupling in magnetostrictive-piezoelectric bilayers | |
Liu et al. | Colossal low-frequency resonant magnetomechanical and magnetoelectric effects in a three-phase ferromagnetic/elastic/piezoelectric composite | |
Dong et al. | Fe–Ga∕ Pb (Mg1∕ 3Nb2∕ 3) O3–PbTiO3 magnetoelectric laminate composites | |
Yan et al. | Giant self-biased magnetoelectric coupling in co-fired textured layered composites | |
Chen et al. | High sensitivity magnetic sensor consisting of ferromagnetic alloy, piezoelectric ceramic and high-permeability FeCuNbSiB | |
Dong et al. | Magnetostrictive and magnetoelectric behavior of Fe–20at.% Ga∕ Pb (Zr, Ti) O3 laminates | |
EP1770371B1 (en) | Magnetic encoder | |
Park et al. | High magnetic field sensitivity in Pb (Zr, Ti) O3–Pb (Mg1/3Nb2/3) O3 single crystal/Terfenol-D/Metglas magnetoelectric laminate composites | |
Pan et al. | Giant magnetoelectric effect in Ni–lead zirconium titanate cylindrical structure | |
Hayes et al. | Electrically modulated magnetoelectric AlN/FeCoSiB film composites for DC magnetic field sensing | |
JPS61181902A (ja) | 歪計 | |
Ou-Yang et al. | Magnetoelectric laminate composites: An overview of methods for improving the DC and low-frequency response | |
Zhang et al. | Giant self-biased magnetoelectric response with obvious hysteresis in layered homogeneous composites of negative magnetostrictive material Samfenol and piezoelectric ceramics | |
Park et al. | Giant magnetoelectric coupling in laminate thin film structure grown on magnetostrictive substrate | |
US9810749B2 (en) | Magnetic field measuring device with vibration compensation | |
Zhang et al. | Magnetoelectric coupling in CoFe2O4∕ SrRuO3∕ Pb (Zr0. 52Ti0. 48) O3 heteroepitaxial thin film structure | |
Yang et al. | Self-biased Metglas/PVDF/Ni magnetoelectric laminate for AC magnetic sensors with a wide frequency range | |
Chen et al. | Enhanced magnetoelectric effects in laminate composites of Terfenol-D/Pb (Zr, TiO) 3 with high-permeability FeCuNbSiB ribbon | |
Shin et al. | Elastically coupled magneto-electric elements with highly magnetostrictive amorphous films and PZT substrates | |
Fetisov et al. | Converse magnetoelectric effects in a galfenol and lead zirconate titanate bilayer | |
Kola et al. | Large magnetoelectric response in lead free BaTi 1− x Sn x O 3/NiFe 2 O 4 bilayer laminated composites |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10756219 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011506144 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13258269 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10756219 Country of ref document: EP Kind code of ref document: A1 |