WO2010081423A1 - Conductive film based on graphene and process for preparing the same - Google Patents

Conductive film based on graphene and process for preparing the same Download PDF

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Publication number
WO2010081423A1
WO2010081423A1 PCT/CN2010/070203 CN2010070203W WO2010081423A1 WO 2010081423 A1 WO2010081423 A1 WO 2010081423A1 CN 2010070203 W CN2010070203 W CN 2010070203W WO 2010081423 A1 WO2010081423 A1 WO 2010081423A1
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graphene
film
isocyanate
diisocyanate
conductive film
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PCT/CN2010/070203
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French (fr)
Chinese (zh)
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陈永胜
黄毅
黄璐
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天津普兰纳米科技有限公司
南开大学
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Priority to US13/144,603 priority Critical patent/US20120012796A1/en
Publication of WO2010081423A1 publication Critical patent/WO2010081423A1/en

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • C09D7/60Additives non-macromolecular
    • C09D7/61Additives non-macromolecular inorganic
    • C09D7/62Additives non-macromolecular inorganic modified by treatment with other compounds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/182Graphene
    • C01B32/194After-treatment
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24Electrically-conducting paints
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • C09D7/70Additives characterised by shape, e.g. fibres, flakes or microspheres
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125Process of deposition of the inorganic material
    • C23C18/1295Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1655Process features
    • C23C18/1662Use of incorporated material in the solution or dispersion, e.g. particles, whiskers, wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/04Carbon

Definitions

  • the invention relates to the field of carbon materials, in particular to a graphene-based conductive film and a preparation method thereof. Background technique
  • Carbon film is a type of film material widely used in the fields of machinery, electronics, construction and medical. At present, the most attractive carbon film materials include diamond film and amorphous carbon film.
  • both diamond films and amorphous carbon films are prepared by methods such as chemical vapor deposition (CVD) or physical vapor deposition (PVD).
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • these matrix materials must be placed in special instruments, and the substrate materials are required to withstand the arc, plasma, high temperature, high pressure or high required for vapor deposition film formation.
  • Special conditions such as vacuum. Therefore, it is difficult to prepare a carbon film on a substrate material (e.g., a polymer) having poor stability by this method.
  • a substrate material e.g., a polymer
  • An aspect of the invention provides a method of preparing a conductive film, comprising the steps of:
  • Figure 1 is an optical photograph of a quartz plate coated with a graphene film.
  • Figure 2 is an optical photograph of a glass sheet coated with a graphene film
  • Figure 3 is an optical photograph of a polyimide film coated with a graphene film.
  • Graphene is a new type of two-dimensional nanocarbon material composed of one layer of carbon atoms. The strength of this material is the highest of the known materials. Its electrical conductivity and current carrying density both exceed the best single-walled carbon nanotubes available today. Its excellent Quantum Hall Effect has also been proven. Graphene has received extensive attention due to its excellent electrical conductivity and good physical and chemical stability.
  • An aspect of the invention provides a method of preparing a conductive film, comprising the steps of:
  • the term "graphene” as used in the present invention means that the molecular skeleton is composed of carbon atoms arranged by hexagonal lattices. Dimensional planar material, single graphene sheet area of 10 nm 2 to 400 ⁇ 2 .
  • the graphene used in the present invention is a single-layer graphene or an oligo-graphene, wherein the thickness of the single-layer graphene is 0.34 nm to 1.4 nm, the number of layers of the oligo-graphene is 2 to 5 layers, and the thickness of the oligo layer is 0.7 nm. To 7 nm
  • the number of layers of oligo-graphene is a statistically significant number of layers.
  • the number of layers of the oligo-graphene is mentioned to be a certain value or range of values, it does not mean that the oligo-layer graphene contains only the number of layers or the graphene layer of the number of layers.
  • the number of layers in the oligo-graphene or the graphene layer in the range of the layer is the oligo-graphene. At least 50%, preferably at least 60%, more preferably at least 70%, still more preferably at least 80% by weight of the total weight.
  • the functionalized graphene is prepared by chemical oxidation using graphite as a raw material.
  • the chemically oxidized graphene may have a functional group such as a carboxyl group, a hydroxyl group, an epoxy bond, an ether bond, or a carbonyl group at its edge.
  • the presence of these functional groups imparts a certain water solubility to the graphene so that it can be dissolved or homogenized in water or other aqueous solvent.
  • the functionalized graphene is prepared by reacting chemically oxidized graphene with an organic functionalizing agent.
  • the organofunctionalizing agent used is an isocyanate compound. Different structures of isocyanate compounds react with reactive groups such as hydroxyl groups and carboxyl groups in chemically oxidized graphene, and different in the graphene structure are introduced. The functional group of the machine makes the graphene easy to dissolve or uniformly disperse in the organic solvent.
  • the isocyanate compounds which can be used in the present invention include, but are not limited to, monoisocyanate compounds and diisocyanate compounds.
  • the monoisocyanate compounds include, but are not limited to, phenyl isocyanate, t-butane isocyanate, cyclohexane isocyanate, hexane isocyanate, cyanophenyl isocyanate, acetylphenyl isocyanate, isocyanatobenzenesulfonic acid azide.
  • the diisocyanate compounds include, but are not limited to, Toluene Diisocyanate (TDI), Methylenediphenyl Diisocyanate (MDI), hexamethylene-1,6-diisocyanate (1,6) -Hexamethylene Diisocyanate, HDI), Isophorone Diisocyanate (IPDI), Hydrogenated Methylenediphenyl Diisocyanate (HMDI).
  • TDI Toluene Diisocyanate
  • MDI Methylenediphenyl Diisocyanate
  • HDI hexamethylene-1,6-diisocyanate
  • IPDI Isophorone Diisocyanate
  • HMDI Hydrogenated Methylenediphenyl Diisocyanate
  • the solvent used in the solution includes water and an organic solvent, wherein the organic solvent includes, but not limited to, acetone, hydrazine, hydrazine-dimercaptoamide (DMF), ethanol, benzene. , dichlorobenzene, tetrahydrofuran and/or acetonitrile.
  • organic solvent includes, but not limited to, acetone, hydrazine, hydrazine-dimercaptoamide (DMF), ethanol, benzene. , dichlorobenzene, tetrahydrofuran and/or acetonitrile.
  • the concentration of the functionalized graphene solution is from 0.1 mg/mL to 10 mg/rrLL.
  • the method of coating used may include, but is not limited to, soaking, spin coating, spraying or casting.
  • the matrix material may be selected from the group consisting of steel, glass, ceramic, quartz, carbon materials, silicon materials, and/or organic materials.
  • the organic material may be selected from the group consisting of polyurethane, polyacrylate, polyester, polyamide, ABS, polyolefin, polycarbonate, polyvinyl chloride, polyimide, epoxy resin, Phenolic resin and / or rubber.
  • the method further comprises, prior to step 1), activating and enhancing the surface of the organic material.
  • the activating comprises soaking the matrix material in concentrated sulfuric acid or coating the surface of the matrix material with polystyrene imine and sodium polyphthalate.
  • the chemical reduction and/or calcination method can completely or partially eliminate the functional groups or defects of the graphene, and restore the structure and properties of the graphene (including conductivity, thermal conductivity and mechanical properties). Wait).
  • the chemical reduction and calcination may be used singly or in combination.
  • the reducing agent may be selected from the group consisting of hydrazine, hydrazine hydrate, dimethylhydrazine and/or borohydrides such as sodium borohydride and potassium borohydride.
  • the chemical reduction is hydrazine hydrate steam fumigation.
  • the calcination is carried out under vacuum.
  • the calcination is carried out under the protection of an inert gas such as nitrogen, argon or helium.
  • Another aspect of the invention provides a conductive film obtained by the above method.
  • the conductive film has excellent electrical conductivity and mechanical strength.
  • Another aspect of the invention provides a method of modifying the surface properties of a substrate material, the method comprising forming a conductive film on the surface of the substrate material by the method of claims 1-14. After the surface is formed into a conductive film, the surface of the base material has excellent electrical conductivity and mechanical strength.
  • Example 1 Conductive film based on single layer graphene
  • the functionalized single layer graphene is prepared by a chemical oxidation process. 10 g of graphite and 7 g of sodium nitrate (analytical grade) were added to the flask, followed by 500 mL of concentrated sulfuric acid (analytical grade). Then, in an ice water bath, 40 g of potassium permanganate was slowly added while stirring, and the addition time was controlled for 2 h, followed by 2 h, and then allowed to cool to room temperature. After stirring at room temperature for 10 days, the reaction solution first changed to green color, and then turned dark brown, and finally became brick brown, and became viscous.
  • reaction solution was slowly added to 1000 mL of 5 wt% dilute sulfuric acid, and the addition time was controlled for 2 h, and stirring was maintained, and the temperature was controlled at 98. C.
  • the reaction solution was stirred at this temperature for a further 2 h and then cooled to 60.
  • C. Add 30 mL of hydrogen peroxide (30% in water) at 60. C was kept for 2 h, then cooled to room temperature and stirred for 2 h.
  • the functionalized single-layer graphene contains an organic functional group such as a hydroxyl group, a carboxyl group, and an epoxy bond, and the mass percentage of the functional group is 20%.
  • the above dispersion of the functionalized single-layer graphene is passed through a spin coating film on a steel plate, an iron plate, a ceramic plate, a quartz plate, an organic film (including polyurethane, polyester, polyamide, ABS, polyethylene, polypropylene). Filming on a base material such as polycarbonate, polyvinyl chloride, polyimide, epoxy resin, phenolic resin or rubber, and obtaining a single layer of graphite supported on different matrix materials by the same reduction method.
  • a conductive film is a spin coating film on a steel plate, an iron plate, a ceramic plate, a quartz plate, an organic film (including polyurethane, polyester, polyamide, ABS, polyethylene, polypropylene).
  • Example 2 Transparent conductive film based on single-layer graphene
  • Functionalized monolayer graphene was prepared as in Example 1. 1 g of the functionalized monolayer graphene was added to water and sonicated at 500 W for 30 minutes to completely disperse.
  • the above dispersion of the functionalized single-layer graphene was formed into a film on the surface of the cleaned quartz sheet (20 x 20 x 1 mm) by a spin coating film, and left at room temperature for 48 hours. Then, the single-layer graphene film supported on the quartz sheet was placed in a closed container, and steamed with hydrazine hydrate (98%, Alfa Aesar) for 24 hours to obtain a vapor-reduced single-layer graphene film.
  • a single layer of graphene film reduced by steam was placed in a tube furnace under a nitrogen atmosphere at 400. After calcination at C for 3 h, a transparent conductive single-layer graphene carbon film was obtained.
  • the vapor-reduced single-layer graphene film is calcined at 1000 ° C for 1 h under vacuum (1 (T 5 Torr )) to obtain a transparent conductive single-layer graphene carbon film.
  • Figure 1 is an optical photograph of a quartz plate coated with a graphene film in which a gray portion is coated with a graphite film, and in order to test its electrical conductivity, a gold electrode is plated with an electrode width and a pitch of 2 mm.
  • Table 2
  • Example 3 Conductive film based on oligo-layer graphene
  • the impurities in the reaction liquid were removed by a centrifugal method similar to that described in Example 1, i.e., an oligographene aqueous solution product was obtained. Further, the solvent water was removed to obtain 2 to 5 layers of the oligo-graphene product.
  • Functionalized monolayer graphene was prepared as in Example 1. 1 g of the functionalized monolayer graphene was added to water and sonicated at 500 W for 30 minutes to completely disperse.
  • the silicon nitride ceramic was immersed in a single layer of graphene aqueous solution for 10 min, taken out and placed at room temperature for 48 h. It was then placed in a closed container and steamed with hydrazine hydrate (80%, Alfa Aesar) for 24 h. Then under nitrogen protection, at 400. Calcination at C for 2 h gave a silicon nitride ceramic coated with a functionalized single-layer graphene conductive film.
  • FIG. 2 is an optical photograph of a glass sheet coated with a graphene film.
  • Fig. 3 is an optical photograph of a polyimide film coated with a graphene film.
  • Figure 4 is an optical photograph of a silicon wafer coated with a graphene film (in order to test its electrical conductivity, a gold electrode was plated with an electrode width and pitch of 2 mm).
  • a single layer of graphene was prepared in accordance with the method of Example 1. 0.2 g of single-layer graphene was placed in a three-necked flask, and 300 mL of distilled DMF was added thereto, and ultrasonically treated at 500 W for 40 minutes to completely disperse. Add 0.4 g of diphenylnonane diisocyanate under nitrogen protection
  • MDI Methyl Diisocyanate
  • oligo-graphene 0.2 g was added to a three-necked flask, and 300 mL of steam-filled water-depleted DMF was added, and treated by 500 W ultrasonic (Kunshan Ultrasonic Instrument Co., Ltd., model: KQ-500DB) for 40 minutes to completely disperse.
  • 500 W ultrasonic Kelshan Ultrasonic Instrument Co., Ltd., model: KQ-500DB
  • TDI Toluene Diisocyanate
  • the resulting solid was dried under vacuum to give TDI functionalized oligographene, yield 70%.
  • TDI-modified oligo-layer graphene 0.2 g was added to 200 mL of acetone, and treated by 500 W ultrasonic (Kunshan Ultrasonic Instrument Co., Ltd., model: KQ-500DB) for 40 minutes to completely disperse it.
  • the quartz piece (30 x 30 x 3 mm) was then immersed in the acetone dispersion for 10 min, taken out and left at room temperature for 12 h. It was then placed in a closed container and steamed with hydrazine hydrate (80%, Alfa Aesar) for 24 h.
  • Example 7 Based on Graphene conductive film of polyimide base material
  • a single layer of graphene was prepared in accordance with the method of Example 1. 2 g of this single layer of graphene was added to water and ultrasonically treated at 500 W for 30 minutes to completely disperse it.
  • polystyrene solution In order to increase the wettability of the polyimide film to water, it is pretreated with a polyelectrolyte solution. 0.5 g of an aqueous solution of polystyrene (molecular weight 70,000) was added thereto, and a 0.5 M aqueous solution of sodium chloride was added thereto to prepare a polystyrene solution having a final volume of 11.1 ml and a concentration of 1.35 mg/ml.
  • a 10 g aqueous solution of sodium polystyrene (molecular weight 100,000) was added, and a certain amount of sodium chloride aqueous solution was added to prepare a polystyrene sodium sulphate solution having a final volume of 66.7 ml and a concentration of 3 mg/ml.
  • the polyimide film was immersed in sodium polystyrene for 20 min, taken out, rinsed with water, and blown dry with a hair dryer. Then, it was immersed in a polyethyleneimine solution for 20 minutes, taken out, rinsed with water, and then blown dry, and the above operation was repeated three times to obtain a polyelectrolyte-modified polyimide film.
  • the modified polyimide film was immersed in a graphene aqueous solution for 20 min, taken out and left at room temperature for 12 h. It was placed in a closed container and steamed with hydrazine hydrate (80%, Alfa Aesar) for 24 h. Finally, under vacuum (10 ⁇ 5 Torr), at 400. After calcination at C for 1 h, an oligo-graphene carbon film having a thickness of 20 nm and an electric conductivity of 4 x 10 2 S/cm was obtained.
  • Example 8 Graphene conductive film based on polyester matrix material
  • Graphene was prepared in accordance with the method of Example 3. 2 g of this graphene was added to water and ultrasonically treated at 500 W for 30 minutes to completely disperse it.
  • the polyester film is first immersed in concentrated sulfuric acid for 10 minutes, and then taken out and rinsed with water to activate the surface of the polyester film.
  • the polyester film was immersed in the graphene aqueous dispersion for 20 min, taken out and left at room temperature for 12 h, and then the polyester film was placed in a pure bismuth solution for 24 h to obtain a reduced monolayer.
  • Graphene conductive film It has a thickness of 15 nm and a conductivity of 6X 10- 1 S/cm. The invention has the following advantages:
  • the single-layer or oligo-layer graphene provided by the invention is soluble in water or an organic solvent, and it is easy to form a uniform carbon film on various materials or objects; compared with conventional chemical meteorological deposition, plasma sputtering, etc.
  • the method has the advantages of simple process, low cost, small equipment investment, and can be applied to products with complicated shapes.
  • the graphene-based carbon film has excellent conductivity and graphene has good electrical conductivity and antistatic effect.
  • Graphene has the best mechanical properties of known materials, so that the carbon film provided by the present invention has high strength and modulus, and may be used in special environments such as construction, machinery, and aerospace.
  • the carbon film provided by the present invention has the advantages of easy heat dissipation, and is expected to be applied in the fields of precision instruments and microelectronics.
  • the thickness of the graphene carbon film is less than 10 nm, it has good light transmittance, and a transparent conductive film can be obtained.
  • the single-layer or oligo-graphene-based carbon film of the present invention has a good application prospect in the fields of mechanical, construction, medical and other traditional fields as well as high-precision instruments, microelectronics and aerospace.

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Abstract

Provided is a process for preparing a conductive film, which comprises following steps: 1) coating the surface of a matrix material with a functionalized graphene solution to form a film; and 2) subjecting the film, loaded on the matrix material, obtained by step 1 to chemical reduction and/or calcination. The process can be used to prepare a conductive film on various matrix materials, such as steel, glass, ceramic, quartz, carbon materials, silicon materials, organic materials.

Description

基于石墨烯的导电膜及其制备方法  Graphene-based conductive film and preparation method thereof
技术领域 Technical field
本发明涉及碳材料领域, 特别是一种基于石墨烯(Graphene )的导电 膜及其制备方法。 背景技术  The invention relates to the field of carbon materials, in particular to a graphene-based conductive film and a preparation method thereof. Background technique
碳膜是一类广泛应用于机械、 电子、 建筑及医疗等领域的薄膜材料。 目前最受关注的碳膜材料包括金刚石薄膜( Diamond Film )及非晶态碳膜 等。  Carbon film is a type of film material widely used in the fields of machinery, electronics, construction and medical. At present, the most attractive carbon film materials include diamond film and amorphous carbon film.
总地来看, 金刚石薄膜和非晶态碳膜大都采用化学气相沉积 (CVD ) 或物理气相沉积(PVD )等方法来制备。 要将这两类薄膜生长于各种基体 材料上, 必须将这些基体材料放置到特殊的仪器中, 并要求基体材料能承 受气相沉积制膜时所需的电弧、 等离子体、 高温、 高压或高真空等特殊条 件。 因此, 很难采用该方法在稳定性较差的基体材料(如聚合物)上制备 碳膜。 另外, 限于仪器空腔的容量, 很难实现在大尺寸或具有复杂形状的 基体上制备碳膜。 发明内容  In general, both diamond films and amorphous carbon films are prepared by methods such as chemical vapor deposition (CVD) or physical vapor deposition (PVD). In order to grow these two types of films on various substrate materials, these matrix materials must be placed in special instruments, and the substrate materials are required to withstand the arc, plasma, high temperature, high pressure or high required for vapor deposition film formation. Special conditions such as vacuum. Therefore, it is difficult to prepare a carbon film on a substrate material (e.g., a polymer) having poor stability by this method. In addition, limited to the capacity of the instrument cavity, it is difficult to prepare a carbon film on a large-sized or complex-shaped substrate. Summary of the invention
本发明的一方面提供制备导电膜的方法, 其包括如下步骤:  An aspect of the invention provides a method of preparing a conductive film, comprising the steps of:
1 ) 将含有官能化石墨烯的溶液涂覆在基体材料表面, 形成薄膜; 以 及  1) coating a solution containing functionalized graphene on the surface of the substrate to form a film;
2 )将步骤 1 ) 中获得的负载于基体材料上的薄膜进行化学还原和 /或 本发明的另一方面提供通过上述方法获得的导电膜。 附图说明  2) Chemically reducing the film supported on the substrate obtained in the step 1) and/or another aspect of the invention provides the conductive film obtained by the above method. DRAWINGS
图 1为涂覆有石墨烯膜的石英片的光学照片。  Figure 1 is an optical photograph of a quartz plate coated with a graphene film.
图 2为涂覆有石墨烯膜的玻璃片的光学照片  Figure 2 is an optical photograph of a glass sheet coated with a graphene film
图 3为涂覆有石墨烯膜的聚酰亚胺薄膜的光学照片。  Figure 3 is an optical photograph of a polyimide film coated with a graphene film.
图 4为涂覆有石墨烯膜的硅片的光学照片。 发明详述 4 is an optical photograph of a silicon wafer coated with a graphene film. Detailed description of the invention
石墨烯是一类由一层碳原子组成的新型二维纳米碳材料。这种材料的 强度是已知材料中最高的。其导电能力和载流密度都超过目前最好的单壁 碳纳米管。 其优良的量子霍尔效应 (Quantum Hall Effect )也已得到证明。 石墨烯由于具有优良的导电性及很好的物理和化学稳定性而受到广泛的 关注。  Graphene is a new type of two-dimensional nanocarbon material composed of one layer of carbon atoms. The strength of this material is the highest of the known materials. Its electrical conductivity and current carrying density both exceed the best single-walled carbon nanotubes available today. Its excellent Quantum Hall Effect has also been proven. Graphene has received extensive attention due to its excellent electrical conductivity and good physical and chemical stability.
本发明的一方面提供制备导电膜的方法, 其包括如下步骤:  An aspect of the invention provides a method of preparing a conductive film, comprising the steps of:
1 ) 将含有官能化石墨烯的溶液涂覆在基体材料表面, 形成薄膜; 以 及  1) coating a solution containing functionalized graphene on the surface of the substrate to form a film;
2 )将步骤 1 ) 中获得的负载于基体材料上的薄膜进行化学还原和 /或 本发明中所用的术语 "石墨烯"是指其分子骨架为由六角形晶格排列 的碳原子组成的二维平面材料, 单个石墨烯片面积为 10 nm2至 400 μηι2。 本发明中所用的石墨烯为单层石墨烯或寡层石墨烯,其中单层石墨烯厚度 为 0.34 nm至 1.4 nm, 寡层石墨烯的层数为 2至 5层, 寡层厚度为 0.7 nm 至 7 nm„ 2) chemically reducing the film supported on the substrate obtained in step 1) and/or the term "graphene" as used in the present invention means that the molecular skeleton is composed of carbon atoms arranged by hexagonal lattices. Dimensional planar material, single graphene sheet area of 10 nm 2 to 400 μηι 2 . The graphene used in the present invention is a single-layer graphene or an oligo-graphene, wherein the thickness of the single-layer graphene is 0.34 nm to 1.4 nm, the number of layers of the oligo-graphene is 2 to 5 layers, and the thickness of the oligo layer is 0.7 nm. To 7 nm
本领域技术人员应当理解, 寡层石墨烯的层数为统计学意义上的层 数。 当提及寡层石墨烯的层数为某一数值或数值范围时, 并非表明该寡层 石墨烯仅含有该层数或该层数范围的石墨烯层。 在本发明中, 当提及寡层 石墨烯的层数为某一数值或数值范围时,该寡层石墨烯中含有的该层数或 该层数范围的石墨烯层为该寡层石墨烯总重量的至少 50% , 优选至少 60% , 更优选至少 70% , 还更优选至少 80%。  Those skilled in the art will appreciate that the number of layers of oligo-graphene is a statistically significant number of layers. When the number of layers of the oligo-graphene is mentioned to be a certain value or range of values, it does not mean that the oligo-layer graphene contains only the number of layers or the graphene layer of the number of layers. In the present invention, when the number of layers of the oligo-graphene is a certain value or a range of values, the number of layers in the oligo-graphene or the graphene layer in the range of the layer is the oligo-graphene. At least 50%, preferably at least 60%, more preferably at least 70%, still more preferably at least 80% by weight of the total weight.
在本发明的一具体实施方案中, 所述官能化石墨烯是以石墨为原料, 通过化学氧化的方法制备的。经化学氧化后的石墨烯在其边缘可以含有羧 基、 羟基、 环氧键、 醚键、 羰基等官能团。 这些官能团的存在赋予石墨烯 一定的水溶性, 使之可以在水或其它水性溶剂中溶解或均勾分散。  In a specific embodiment of the invention, the functionalized graphene is prepared by chemical oxidation using graphite as a raw material. The chemically oxidized graphene may have a functional group such as a carboxyl group, a hydroxyl group, an epoxy bond, an ether bond, or a carbonyl group at its edge. The presence of these functional groups imparts a certain water solubility to the graphene so that it can be dissolved or homogenized in water or other aqueous solvent.
在本发明的另一具体实施方案中,所述官能化石墨烯是使化学氧化后的 石墨烯与有机官能化试剂反应而制备的。 在一具体实施方案中, 所用的有机 官能化试剂为异氰酸酯类化合物。 不同结构的异氰酸酯类化合物与化学氧化 后的石墨烯中的羟基、 羧基等活性基团反应, 在石墨烯结构中引入不同的有 机官能团, 从而使石墨烯易于在有机溶剂溶解或均匀分散。 In another embodiment of the invention, the functionalized graphene is prepared by reacting chemically oxidized graphene with an organic functionalizing agent. In a particular embodiment, the organofunctionalizing agent used is an isocyanate compound. Different structures of isocyanate compounds react with reactive groups such as hydroxyl groups and carboxyl groups in chemically oxidized graphene, and different in the graphene structure are introduced. The functional group of the machine makes the graphene easy to dissolve or uniformly disperse in the organic solvent.
可用于本发明的异氰酸酯类化合物包括但不限于单异氰酸酯类化合物和 二异氰酸酯类化合物。 所述单异氰酸酯类化合物包括但不限于苯异氰酸酯、 叔丁烷异氰酸酯、 环己烷异氰酸酯、 己烷异氰酸酯、 氰基苯异氰酸酯、 乙酰 基苯异氰酸酯、 异氰酸根合苯磺酸叠氮化物。 所述二异氰酸酯类化合物包括 但不限于曱苯二异氰酸酯(Toluene Diisocyanate, TDI )、 二苯基曱烷二异氰 酸酯 ( Methylenediphenyl Diisocyanate , MDI ), 六亚曱基 - 1 , 6-二异氰酸酯 ( 1,6-Hexamethylene Diisocyanate, HDI )、 异佛尔酉同二异氰酸酷 (Isophorone Diisocyanate , IPDI)、 二环 己基曱烷二异氰酸酯 ( Hydrogenated Methylenediphenyl Diisocyanate, HMDI )。  The isocyanate compounds which can be used in the present invention include, but are not limited to, monoisocyanate compounds and diisocyanate compounds. The monoisocyanate compounds include, but are not limited to, phenyl isocyanate, t-butane isocyanate, cyclohexane isocyanate, hexane isocyanate, cyanophenyl isocyanate, acetylphenyl isocyanate, isocyanatobenzenesulfonic acid azide. The diisocyanate compounds include, but are not limited to, Toluene Diisocyanate (TDI), Methylenediphenyl Diisocyanate (MDI), hexamethylene-1,6-diisocyanate (1,6) -Hexamethylene Diisocyanate, HDI), Isophorone Diisocyanate (IPDI), Hydrogenated Methylenediphenyl Diisocyanate (HMDI).
在本发明的一具体实施方案中,所述溶液中所用的溶剂包括水和有机 溶剂, 其中所述有机溶剂包括但不限于丙酮、 Ν,Ν-二曱基曱酰胺(DMF )、 乙醇、 苯、 二氯苯、 四氢呋喃和 /或乙腈等。  In a specific embodiment of the present invention, the solvent used in the solution includes water and an organic solvent, wherein the organic solvent includes, but not limited to, acetone, hydrazine, hydrazine-dimercaptoamide (DMF), ethanol, benzene. , dichlorobenzene, tetrahydrofuran and/or acetonitrile.
在本发明的一具体实施方案中, 所述官能化石墨烯的溶液的浓度为 0.1 mg/mL至 10 mg/rrLL。  In a specific embodiment of the invention, the concentration of the functionalized graphene solution is from 0.1 mg/mL to 10 mg/rrLL.
在本发明的一具体实施方案中,所用的涂覆的方法可以包括但不限于 浸泡、 旋涂、 喷涂或浇铸。  In a particular embodiment of the invention, the method of coating used may include, but is not limited to, soaking, spin coating, spraying or casting.
在本发明的一具体实施方案中,所述的基体材料可以选自钢铁、玻璃、 陶瓷、 石英、 碳材料、 硅材料和 /或有机物材料。  In a particular embodiment of the invention, the matrix material may be selected from the group consisting of steel, glass, ceramic, quartz, carbon materials, silicon materials, and/or organic materials.
在另一具体实施方案中, 所述的有机物材料可以选自聚氨酯、 聚丙烯 酸酯、 聚酯、 聚酰胺、 ABS、 聚烯烃、 聚碳酸酯、 聚氯乙烯、 聚酰亚胺、 环氧树脂、 酚醛树脂和 /或橡胶。  In another specific embodiment, the organic material may be selected from the group consisting of polyurethane, polyacrylate, polyester, polyamide, ABS, polyolefin, polycarbonate, polyvinyl chloride, polyimide, epoxy resin, Phenolic resin and / or rubber.
在本发明的一具体实施方案中, 当基体材料为有机物材料, 并且含有 官能化石墨烯的溶液为水性溶液时, 所述方法在步骤 1 )之前还包括使所 述有机物材料的表面活化、 增强所述有机物材料的表面的亲水性的步骤。 在本发明的优选实施方案中, 所述活化包括将基体材料浸泡在浓硫酸中, 或者在基体材料的表面涂覆聚苯乙烯亚胺和聚苯乙婦磺酸钠。  In a specific embodiment of the invention, when the matrix material is an organic material and the solution containing the functionalized graphene is an aqueous solution, the method further comprises, prior to step 1), activating and enhancing the surface of the organic material. The step of hydrophilicity of the surface of the organic material. In a preferred embodiment of the invention, the activating comprises soaking the matrix material in concentrated sulfuric acid or coating the surface of the matrix material with polystyrene imine and sodium polyphthalate.
在本发明的制备导电膜的方法中, 采用化学还原和 /或焙烧的方法, 可以全部或部分消除石墨烯的官能团或缺陷, 恢复石墨烯的结构及性能 (包括导电性、 导热性及力学性能等)。 在本发明的方法中, 所述化学还 原和焙烧可以单独使用, 也可以联合使用。 在本发明的一具体实施方案中, 所述的还原剂可以选自肼、 水合肼、 二甲肼和 /或诸如硼氢化钠和硼氢化钾的硼氢化物。 In the method for preparing a conductive film of the present invention, the chemical reduction and/or calcination method can completely or partially eliminate the functional groups or defects of the graphene, and restore the structure and properties of the graphene (including conductivity, thermal conductivity and mechanical properties). Wait). In the method of the present invention, the chemical reduction and calcination may be used singly or in combination. In a particular embodiment of the invention, the reducing agent may be selected from the group consisting of hydrazine, hydrazine hydrate, dimethylhydrazine and/or borohydrides such as sodium borohydride and potassium borohydride.
在本发明的一具体实施方案中, 所述的化学还原为水合肼蒸汽熏蒸。 在本发明的一具体实施方案中, 所述焙烧在真空下进行。  In a particular embodiment of the invention, the chemical reduction is hydrazine hydrate steam fumigation. In a particular embodiment of the invention, the calcination is carried out under vacuum.
在本发明的另一具体实施方案中, 所述焙烧在诸如氮气、 氩气、 氦气 等惰性气体保护下进行。  In another embodiment of the invention, the calcination is carried out under the protection of an inert gas such as nitrogen, argon or helium.
本发明的另一方面提供通过上述方法获得的导电膜。该导电膜具有优 良的导电性和机械强度。  Another aspect of the invention provides a conductive film obtained by the above method. The conductive film has excellent electrical conductivity and mechanical strength.
本发明的另一方面提供改变基体材料表面性质的方法,所述方法包括 通过权利要求 1-14所述的方法在所述基体材料表面形成导电膜。 在表面 形成导电膜之后, 基体材料的表面会具有优良的导电性和机械强度。  Another aspect of the invention provides a method of modifying the surface properties of a substrate material, the method comprising forming a conductive film on the surface of the substrate material by the method of claims 1-14. After the surface is formed into a conductive film, the surface of the base material has excellent electrical conductivity and mechanical strength.
下面通过实施例对本发明进行具体描述,本实施例只用于对本发明作 进一步的说明, 不能理解为对本发明保护范围的限制, 本领域的技术人员 根据上述本发明的内容做出一些非本质的改进和调整,均属本发明保护范 围。 实施例 1 : 基于单层石墨烯的导电膜  The present invention is specifically described by the following examples, which are only used to further illustrate the present invention, and are not to be construed as limiting the scope of the present invention. Improvements and adjustments are within the scope of the invention. Example 1 : Conductive film based on single layer graphene
采用化学氧化方法制备官能化的单层石墨烯。将 10 g石墨和 7 g硝酸 钠(分析纯)加入烧瓶中, 然后加入 500 mL浓硫酸 (分析纯)。 之后于冰水浴 中,边搅拌边緩緩加入 40 g高锰酸钾,加入时间控制在 2 h,之后保持 2 h, 然后使之降温至室温。 室温搅拌 10天, 反应溶液先变至绿色, 进而变为 深棕色, 最后变为砖棕色, 并且变粘稠。 将反应溶液緩緩加入到 1000 mL 5wt%的稀硫酸中, 加入时间控制在 2 h , 保持搅拌, 温度控制在 98。C。 反 应液在该温度下再继续搅拌 2 h,然后降温至 60。C。加入 30 mL双氧水 (30% 水溶液), 在 60。C保持 2 h, 之后降至室温, 搅拌 2 h。  The functionalized single layer graphene is prepared by a chemical oxidation process. 10 g of graphite and 7 g of sodium nitrate (analytical grade) were added to the flask, followed by 500 mL of concentrated sulfuric acid (analytical grade). Then, in an ice water bath, 40 g of potassium permanganate was slowly added while stirring, and the addition time was controlled for 2 h, followed by 2 h, and then allowed to cool to room temperature. After stirring at room temperature for 10 days, the reaction solution first changed to green color, and then turned dark brown, and finally became brick brown, and became viscous. The reaction solution was slowly added to 1000 mL of 5 wt% dilute sulfuric acid, and the addition time was controlled for 2 h, and stirring was maintained, and the temperature was controlled at 98. C. The reaction solution was stirred at this temperature for a further 2 h and then cooled to 60. C. Add 30 mL of hydrogen peroxide (30% in water) at 60. C was kept for 2 h, then cooled to room temperature and stirred for 2 h.
为除去氧化性物质带来的离子, 尤其是锰离子, 将使用离心的方法除 去反应溶液中的杂质: 在 4000 rpm下离心 10 min, 除去上清液, 向得到 的固体中加入 2 L 3 wt%浓硫酸 /0.5 wt%双氧水的混合液, 强烈搅拌并在 200 W下水浴超声 30 min, 重复上述操作 15次。 之后使用 3 wt%的盐酸 重复上述操作 3次, 使用蒸馏水重复上述操作 1次。 之后将反应液转移到 丙酮中,除去剩余的酸。最后干燥得到官能化的单层石墨烯,产率为 70%。 该官能化的单层石墨烯含有羟基、羧基和环氧键等有机官能团, 官能团的 质量百分比为 20%。 In order to remove ions from oxidizing substances, especially manganese ions, impurities in the reaction solution are removed by centrifugation: centrifugation at 4000 rpm for 10 min, the supernatant is removed, and 2 L 3 wt is added to the obtained solid. A mixture of % concentrated sulfuric acid / 0.5 wt% hydrogen peroxide was vigorously stirred and sonicated in a water bath at 200 W for 30 min, and the above operation was repeated 15 times. Thereafter, the above operation was repeated 3 times using 3 wt% of hydrochloric acid, and the above operation was repeated once using distilled water. The reaction solution was then transferred to acetone to remove the remaining acid. Final drying gave a functionalized monolayer of graphene in a yield of 70%. The functionalized single-layer graphene contains an organic functional group such as a hydroxyl group, a carboxyl group, and an epoxy bond, and the mass percentage of the functional group is 20%.
将 1 g官能化的单层石墨烯加入水中,经 500 W超声波处理 30分钟, 使其完全分散。 将该分散液通过喷涂的方法在清洗过的玻璃基板( 10x10 cm)表面成膜, 常温下放置 48 h, 然后将玻璃板放置在纯肼溶液中浸泡 24 h, 得到还原后的单层石墨烯导电膜。  1 g of functionalized monolayer graphene was added to water and sonicated at 500 W for 30 minutes. The dispersion was formed into a film on the surface of the cleaned glass substrate (10×10 cm) by spraying, and left at room temperature for 48 h, and then the glass plate was placed in a pure bismuth solution for 24 h to obtain a reduced single-layer graphene. Conductive film.
将官能化的单层石墨烯的上述分散液通过旋转涂膜的方法分别在钢 板、 铁板、 陶瓷片、 石英片、 有机物膜 (包括聚氨酯、 聚酯、 聚酰胺、 ABS、 聚乙烯、 聚丙烯、 聚碳酸酯、 聚氯乙烯、 聚酰亚胺、 环氧树脂、 酚 醛树脂或橡胶等)基体材料上成膜, 并通过同样的还原方法获得还原后的 负载于不同基体材料上的单层石墨烯导电膜。  The above dispersion of the functionalized single-layer graphene is passed through a spin coating film on a steel plate, an iron plate, a ceramic plate, a quartz plate, an organic film (including polyurethane, polyester, polyamide, ABS, polyethylene, polypropylene). Filming on a base material such as polycarbonate, polyvinyl chloride, polyimide, epoxy resin, phenolic resin or rubber, and obtaining a single layer of graphite supported on different matrix materials by the same reduction method. A conductive film.
该方法制备的碳膜的表征结果列于表 1中。 表 1  The characterization results of the carbon films prepared by this method are shown in Table 1. Table 1
单层石墨烯 电导率 基体材料 外观 耐刮蹭情况  Single layer graphene conductivity matrix material appearance scratch resistance
碳膜的厚度 (S/cm) 玻璃板 1 μηι 灰色、半透明 良好 5x10 钢板 1 μηι 灰色、半透明 良好 基体导电 铁板 1 μηι 灰色、半透明 良好 基体导电 石英片 1 μηι 灰色、半透明 良好 5x10 陶瓷片 10 μηι 灰色、半透明 良好 6x10 聚氨酯膜 10 μηι 灰色、半透明 良好 6x10 聚酯膜 10 μηι 灰色、半透明 良好 6x10 聚酰胺膜 10 μηι 灰色、半透明 良好 6x10 Carbon film thickness (S/cm) Glass plate 1 μηι Gray, translucent good 5x10 steel plate 1 μηι Gray, translucent good base conductive iron plate 1 μηι Gray, translucent good matrix conductive quartz plate 1 μηι Gray, translucent good 5x10 Ceramic sheet 10 μηι Gray, translucent good 6x10 polyurethane film 10 μηι Gray, translucent good 6x10 polyester film 10 μηι Gray, translucent good 6x10 polyamide film 10 μηι Gray, translucent good 6x10
ABS膜 10 μηι 灰色、半透明 良好 6x10 聚乙烯膜 10 μηι 灰色、半透明 良好 6x10 聚丙烯膜 10 μηι 灰色、半透明 良好 6x10 聚氯乙烯膜 100 μηι 黑色、不透明 良好 6x10 聚酰亚胺膜 100 μηι 黑色、不透明 良好 6x10 环氧树脂片 100 μηι 黑色、不透明 良好 6x10 酚醛树脂片 100 μηι 黑色、不透明 良好 6x 10 橡胶片 100 μηι 黑色、不透明 良好 6x 10 实施例 2: 基于单层石墨烯的透明导电膜 ABS film 10 μηι Gray, translucent good 6x10 polyethylene film 10 μηι Gray, translucent good 6x10 polypropylene film 10 μηι Gray, translucent good 6x10 PVC film 100 μηι Black, opaque good 6x10 polyimide film 100 μηι Black, opaque good 6x10 epoxy sheet 100 μηι black, opaque good 6x10 Phenolic resin sheet 100 μηι Black, opaque good 6x 10 rubber sheet 100 μηι Black, opaque good 6x 10 Example 2: Transparent conductive film based on single-layer graphene
按照实施例 1的方法制备官能化的单层石墨烯。 将 1 g官能化的单层 石墨烯加入水中, 经 500 W超声波处理 30分钟, 使其完全分散。  Functionalized monolayer graphene was prepared as in Example 1. 1 g of the functionalized monolayer graphene was added to water and sonicated at 500 W for 30 minutes to completely disperse.
将官能化的单层石墨烯的上述分散液通过旋转涂膜的方法在清洗过 的石英片 (20x20x 1 mm )表面成膜, 常温下放置 48 h。 然后将负载在石 英片上的单层石墨烯薄膜放置在密闭容器中,用水合肼( 98%, Alfa Aesar ) 蒸汽熏蒸 24 h, 得到肼蒸汽还原过的单层石墨烯薄膜。  The above dispersion of the functionalized single-layer graphene was formed into a film on the surface of the cleaned quartz sheet (20 x 20 x 1 mm) by a spin coating film, and left at room temperature for 48 hours. Then, the single-layer graphene film supported on the quartz sheet was placed in a closed container, and steamed with hydrazine hydrate (98%, Alfa Aesar) for 24 hours to obtain a vapor-reduced single-layer graphene film.
将肼蒸汽还原过的单层石墨烯薄膜,放置于管式炉中,在氮气保护下, 于 400。C下焙烧 3 h, 得到透明导电的单层石墨烯碳膜。  A single layer of graphene film reduced by steam was placed in a tube furnace under a nitrogen atmosphere at 400. After calcination at C for 3 h, a transparent conductive single-layer graphene carbon film was obtained.
或者, 将肼蒸汽还原过的单层石墨烯薄膜在真空 ( l(T5 Torr ) 下, 于 1000°C下焙烧 1 h, 得到透明导电的单层石墨烯碳膜。 Alternatively, the vapor-reduced single-layer graphene film is calcined at 1000 ° C for 1 h under vacuum (1 (T 5 Torr )) to obtain a transparent conductive single-layer graphene carbon film.
使用本实施例的方法制备的碳膜的表征结果列于表 2中。  The characterization results of the carbon films prepared by the method of this example are shown in Table 2.
图 1是涂覆有石墨烯膜的石英片的光学照片(其中灰色部分涂覆了石 墨烯膜,为了测试其电导率,镀上了金电极, 电极宽度和间距均为 2 mm )。 表 2  Figure 1 is an optical photograph of a quartz plate coated with a graphene film in which a gray portion is coated with a graphite film, and in order to test its electrical conductivity, a gold electrode is plated with an electrode width and a pitch of 2 mm. Table 2
Figure imgf000007_0001
实施例 3 : 基于寡层石墨烯的导电膜
Figure imgf000007_0001
Example 3: Conductive film based on oligo-layer graphene
将 5.0 g石墨与 3.75 g NaN03加入到 1 L的圓底三口瓶中, 然后边搅 拌边緩慢倒入 190 ml浓硫酸。 混合均匀后緩慢加入 11.25 g KMn04固体, 之后保持冰浴 3 h使之降至室温。 在室温下搅拌 6天后, 緩慢向反应体系 中滴加 500 ml蒸馏水, 并在 95~98。C下反应 3小时。 将反应液冷却, 加 入 15 ml双氧水(30%wt水溶液), 然后在常温下搅拌。 使用与实施例 1 所述类似的离心方法除去反应液中杂质, 即获得寡层石墨烯水溶液产品。 再将溶剂水除去即获得 2-5层的寡层石墨烯产品。 5.0 g of graphite and 3.75 g of NaN0 3 were added to a 1 L round bottom three-necked flask, and then 190 ml of concentrated sulfuric acid was slowly poured while stirring. After mixing well, 11.25 g of KMn0 4 solid was slowly added, followed by keeping the ice bath for 3 h to bring it to room temperature. After stirring at room temperature for 6 days, slowly to the reaction system Add 500 ml of distilled water dropwise, and at 95~98. The reaction was carried out for 3 hours at C. The reaction solution was cooled, and 15 ml of hydrogen peroxide (30% by weight aqueous solution) was added, followed by stirring at normal temperature. The impurities in the reaction liquid were removed by a centrifugal method similar to that described in Example 1, i.e., an oligographene aqueous solution product was obtained. Further, the solvent water was removed to obtain 2 to 5 layers of the oligo-graphene product.
将 1 g上述寡层石墨烯加入水中, 经 500 W超声波处理 60分钟, 使 其完全分散。 加入 0.5 g硼氢化钠, 搅拌, 在 80。C下反应 2 h, 溶液由棕 色转变为黑色, 得到了还原后的寡层石墨烯分散液。  1 g of the above oligographene graphene was added to water and ultrasonically treated at 500 W for 60 minutes to completely disperse it. Add 0.5 g of sodium borohydride and stir at 80. The reaction was carried out at C for 2 h, and the solution was changed from brown to black to obtain a reduced oligo graphene dispersion.
将上述石墨烯分散液通过浇铸的方法在清洗过的玻璃基板 ( 10x 10 cm )表面成膜, 常温下放置 48 h。 然后将负载于玻璃基板上的石墨烯薄 膜在氮气保护下, 于 400。C下焙烧 3 h, 得到导电的寡层石墨烯碳膜, 其 电导率为 2x l02 S/cm。 实施例 4: 涂覆有基于单层石墨烯的导电膜的材料 The above graphene dispersion was formed into a film on the surface of the cleaned glass substrate (10×10 cm) by a casting method, and left at room temperature for 48 hours. The graphene film supported on the glass substrate was then subjected to a nitrogen atmosphere at 400. After calcination at C for 3 h, a conductive oligo-graphene carbon film having a conductivity of 2 x 10 2 S/cm was obtained. Example 4: Material coated with a single-layer graphene-based conductive film
按照实施例 1的方法制备官能化的单层石墨烯。 将 1 g官能化的单层 石墨烯加入水中, 经 500 W超声波处理 30分钟, 使其完全分散。  Functionalized monolayer graphene was prepared as in Example 1. 1 g of the functionalized monolayer graphene was added to water and sonicated at 500 W for 30 minutes to completely disperse.
将氮化硅陶瓷在单层石墨烯水溶液中浸泡 lO min,取出后在常温下放 置 48 h。 然后将其放置在密闭容器中, 用水合肼 (80% , Alfa Aesar ) 蒸 汽熏蒸 24 h。 随后在氮气保护下, 于 400。C下焙烧 2 h, 得到表面涂覆有 官能化的单层石墨烯导电膜的氮化硅陶瓷。  The silicon nitride ceramic was immersed in a single layer of graphene aqueous solution for 10 min, taken out and placed at room temperature for 48 h. It was then placed in a closed container and steamed with hydrazine hydrate (80%, Alfa Aesar) for 24 h. Then under nitrogen protection, at 400. Calcination at C for 2 h gave a silicon nitride ceramic coated with a functionalized single-layer graphene conductive film.
利用同样的方法,制备表面涂覆有官能化的单层石墨烯导电膜的氧化 铝陶瓷、 合金钢、 工具钢、 生铁、 石英、 玻璃、 硅片及聚酰亚胺薄膜等材 料。 这些材料及其表征列于表 3中。  Using the same method, materials such as alumina ceramics, alloy steel, tool steel, pig iron, quartz, glass, silicon wafer, and polyimide film coated with a functionalized single-layer graphene conductive film were prepared. These materials and their characterization are listed in Table 3.
图 2是涂覆有石墨烯膜的玻璃片的光学照片。图 3是为涂覆有石墨烯 膜的聚酰亚胺薄膜的光学照片。图 4是涂覆有石墨烯膜的硅片的光学照片 (为了测试其电导率, 镀上了金电极, 电极宽度和间距均为 2 mm )。
Figure imgf000008_0001
2 is an optical photograph of a glass sheet coated with a graphene film. Fig. 3 is an optical photograph of a polyimide film coated with a graphene film. Figure 4 is an optical photograph of a silicon wafer coated with a graphene film (in order to test its electrical conductivity, a gold electrode was plated with an electrode width and pitch of 2 mm).
Figure imgf000008_0001
基体材料 涂覆层厚度 涂覆层外观 耐刮蹭情况 电导率  Base material coating thickness coating appearance scratch resistance conductivity
( nm ) (S/cm) 氮化娃陶瓷 5 无色、 透明 良好 2χ 102 氧化铝陶瓷 5 无色、 透明 良好 基体导电 合金钢 20CrMnSi 4 无色、 透明 良好 基体导电 工具钢 SKH52 4 无色、 透明 良好 基体导电 生铁 4 无色、 透明 良好 基体导电 石英片 5 无色、 透明 良好 2χ 102 玻璃片 5 无色、 透明 良好 2χ 102 硅片 10 半透明 良好 2χ 102 聚酰亚胺 10 半透明 良好 2χ 102 实施例 5: 基于有机可溶的单层石墨烯的导电膜 ( nm ) (S/cm) Silicon Nitride Ceramics 5 Colorless, transparent 2χ 10 2 Alumina Ceramics 5 Colorless, transparent, good matrix conductive Alloy steel 20CrMnSi 4 colorless, transparent good base conductive tool steel SKH52 4 colorless, transparent good base conductive pig iron 4 colorless, transparent good base conductive quartz plate 5 colorless, transparent good 2χ 10 2 glass piece 5 colorless, transparent good 2χ 10 2 Silicon wafer 10 Translucent good 2χ 10 2 Polyimide 10 Translucent good 2χ 10 2 Example 5: Conductive film based on organic soluble single-layer graphene
按照实施例 1的方法制备单层石墨烯。 将 0.2 g单层石墨烯加入三口 瓶中, 加入 300 mL经蒸馏除水的 DMF , 经 500 W超声波处理 40分钟, 使其完全分散。 在氮气保护下, 加入 0.4 g 二苯基曱烷二异氰酸酯 A single layer of graphene was prepared in accordance with the method of Example 1. 0.2 g of single-layer graphene was placed in a three-necked flask, and 300 mL of distilled DMF was added thereto, and ultrasonically treated at 500 W for 40 minutes to completely disperse. Add 0.4 g of diphenylnonane diisocyanate under nitrogen protection
( Methylenediphenyl Diisocyanate, 筒称 MDI ), 并在氮气保护下, 室温搅 拌 5天, 再经过高速离心 ( 10000转 /分), 过滤得到固体。 将所得固体 真空干燥, 获得 MDI官能化的单层石墨烯, 产率 75%。 (Methylenediphenyl Diisocyanate, MDI), and stirred under nitrogen for 5 days at room temperature, then centrifuged at high speed (10,000 rpm) to obtain a solid. The obtained solid was vacuum dried to obtain MDI-functionalized single-layer graphene in a yield of 75%.
将 0.2 g MDI 改性的单层石墨烯加入 200 mL Ν,Ν-二曱基曱酰胺 Add 0.2 g MDI modified single-layer graphene to 200 mL Ν, Ν-dimercaptoamide
( DMF ) 中, 经 500 W超声波处理 40分钟, 使其完全分散。 然后通过旋 转涂膜的方法在清洗过的玻璃板(5x5 cm )表面成膜, 常温下放置 48 h。 然后将负载在玻璃板上的单层石墨烯薄膜放置在密闭容器中, 用水合肼In (DMF), it was sonicated at 500 W for 40 minutes to completely disperse it. Then, a film was formed on the surface of the cleaned glass plate (5 x 5 cm) by a rotary coating method, and left at room temperature for 48 hours. Then, the single-layer graphene film loaded on the glass plate is placed in a closed container, and hydrated with water.
( 80%, Alfa Aesar )蒸汽熏蒸 24 h, 得到肼蒸汽还原过的 MIDI改性的单 层石墨烯薄膜。 随后将该薄膜放置于管式炉中, 在氮气保护下, 于 400。C 下焙烧 3 h,得到基于有机可溶的单层石墨烯的导电膜。该膜的厚度为 100 nm, 电导率为 3x l02 S/cm。 实施例 6: 基于有机可溶的寡层石墨烯的导电膜 (80%, Alfa Aesar) steam fumigation for 24 h, 肼 steam-reduced MIDI modified single-layer graphene film. The film was then placed in a tube furnace under a nitrogen blanket at 400. Calcination was carried out for 3 h at C to obtain a conductive film based on an organic soluble single-layer graphene. The film has a thickness of 100 nm and an electrical conductivity of 3 x 10 2 S/cm. Example 6: Conductive film based on organic soluble oligo-layer graphene
将 0.2 g寡层石墨烯加入三口瓶中,加入 300 mL经蒸愤除水的 DMF, 经 500 W超声波(昆山市超声仪器有限公司, 型号: KQ-500DB )处理 40 分钟,使其完全分散。在氮气保护下,加入 0.3 g曱苯二异氰酸酯(Toluene Diisocyanate, 筒称 TDI ), 并在氮气保护下, 室温搅拌 5天, 再经过高速 离心 ( 10000 转 /分), 过滤得到固体。 将所得固体真空干燥, 获得 TDI 官能化的寡层石墨烯, 产率 70%。 将 0.2 g TDI改性的寡层石墨烯加入 200 mL丙酮中, 经 500 W超声 波(昆山市超声仪器有限公司, 型号: KQ-500DB )处理 40分钟, 使其完 全分散。 然后将石英片 ( 30x30x3 mm ) 在该丙酮分散液中浸泡 10 min, 取出后在常温下放置 12 h。 然后将其放置在密闭容器中, 用水合肼(80% , Alfa Aesar ) 蒸汽熏蒸 24 h。 最后在真空 ( 1(T5 Torr ) 下, 于 1100。C下焙 烧 l h, 得到寡层石墨烯碳膜, 其厚度为 10 nm, 电导率为 5 x l04 S/cm。 实施例 7: 基于聚酰亚胺基体材料的石墨烯导电膜 0.2 g of oligo-graphene was added to a three-necked flask, and 300 mL of steam-filled water-depleted DMF was added, and treated by 500 W ultrasonic (Kunshan Ultrasonic Instrument Co., Ltd., model: KQ-500DB) for 40 minutes to completely disperse. Under a nitrogen atmosphere, 0.3 g of Toluene Diisocyanate (TDI) was added, and the mixture was stirred at room temperature for 5 days under nitrogen atmosphere, and then subjected to high-speed centrifugation (10,000 rpm) to obtain a solid. The resulting solid was dried under vacuum to give TDI functionalized oligographene, yield 70%. 0.2 g of TDI-modified oligo-layer graphene was added to 200 mL of acetone, and treated by 500 W ultrasonic (Kunshan Ultrasonic Instrument Co., Ltd., model: KQ-500DB) for 40 minutes to completely disperse it. The quartz piece (30 x 30 x 3 mm) was then immersed in the acetone dispersion for 10 min, taken out and left at room temperature for 12 h. It was then placed in a closed container and steamed with hydrazine hydrate (80%, Alfa Aesar) for 24 h. Finally, under vacuum (1 (T 5 Torr ), calcination at 1100 ° C for 1 h, an oligo-graphene carbon film having a thickness of 10 nm and an electric conductivity of 5 x 10 4 S/cm was obtained. Example 7: Based on Graphene conductive film of polyimide base material
按照实施例 1的方法制备单层石墨烯。将 2 g该单层石墨烯加入水中, 经 500 W超声波处理 30分钟, 使其完全分散。  A single layer of graphene was prepared in accordance with the method of Example 1. 2 g of this single layer of graphene was added to water and ultrasonically treated at 500 W for 30 minutes to completely disperse it.
为了增加聚酰亚胺薄膜对水的浸润性,先采用聚电解质溶液对其进行 预处理。 取 0.5 g聚苯乙烯亚胺(分子量 70000 )水溶液, 向其内加入 0.5 M氯化钠水溶液, 配成终体积为 11.1 ml、 浓度为 1.35 mg/ml的聚苯乙婦 亚胺溶液。 取 10 g聚苯乙烯橫酸钠 (分子量 100000 ) 水溶液, 加入一定 量的氯化钠水溶液, 配成终体积为 66.7 ml、 浓度为 3 mg/ml的聚苯乙烯 横酸钠溶液。 将聚酰亚胺薄膜在聚苯乙烯横酸钠中浸泡 20 min, 取出, 用 水沖洗, 用电吹风吹干。 然后将其浸入聚乙烯亚胺溶液中 20min, 取出, 用水沖洗, 再吹干, 重复以上操作三次, 获得了聚电解质改性的聚酰亚胺 薄膜。  In order to increase the wettability of the polyimide film to water, it is pretreated with a polyelectrolyte solution. 0.5 g of an aqueous solution of polystyrene (molecular weight 70,000) was added thereto, and a 0.5 M aqueous solution of sodium chloride was added thereto to prepare a polystyrene solution having a final volume of 11.1 ml and a concentration of 1.35 mg/ml. A 10 g aqueous solution of sodium polystyrene (molecular weight 100,000) was added, and a certain amount of sodium chloride aqueous solution was added to prepare a polystyrene sodium sulphate solution having a final volume of 66.7 ml and a concentration of 3 mg/ml. The polyimide film was immersed in sodium polystyrene for 20 min, taken out, rinsed with water, and blown dry with a hair dryer. Then, it was immersed in a polyethyleneimine solution for 20 minutes, taken out, rinsed with water, and then blown dry, and the above operation was repeated three times to obtain a polyelectrolyte-modified polyimide film.
将改性后的聚酰亚胺薄膜在石墨烯水溶液中浸泡 20 min,取出后在常 温下放置 12 h。 将其放置在密闭容器中, 用水合肼 (80%, Alfa Aesar ) 蒸汽熏蒸 24 h。 最后在真空( 10·5 Torr )下, 于 400。C下焙烧 1 h, 得到寡 层石墨烯碳膜, 其厚度为 20 nm, 电导率为 4x l02 S/cm。 实施例 8: 基于聚酯基体材料的石墨烯导电膜 The modified polyimide film was immersed in a graphene aqueous solution for 20 min, taken out and left at room temperature for 12 h. It was placed in a closed container and steamed with hydrazine hydrate (80%, Alfa Aesar) for 24 h. Finally, under vacuum (10· 5 Torr), at 400. After calcination at C for 1 h, an oligo-graphene carbon film having a thickness of 20 nm and an electric conductivity of 4 x 10 2 S/cm was obtained. Example 8: Graphene conductive film based on polyester matrix material
按照实施例 3的方法制备石墨烯。将 2 g该石墨烯加入水中,经 500 W 超声波处理 30分钟, 使其完全分散。  Graphene was prepared in accordance with the method of Example 3. 2 g of this graphene was added to water and ultrasonically treated at 500 W for 30 minutes to completely disperse it.
为了增加聚酯基底对水的浸润性, 先将聚酯薄膜放入浓硫酸中浸泡 10分钟, 取出后用水沖洗, 使聚酯薄膜表面活化。  In order to increase the wettability of the polyester substrate, the polyester film is first immersed in concentrated sulfuric acid for 10 minutes, and then taken out and rinsed with water to activate the surface of the polyester film.
将该聚酯薄膜在石墨烯水分散液中浸泡 20 min,取出后在常温下放置 12 h, 然后将该聚酯薄膜放置在纯肼溶液中浸泡 24 h, 得到还原后的单层 石墨烯导电膜。 其厚度为 15 nm, 电导率为 6X 10-1 S/cm。 本发明具有如下优点: The polyester film was immersed in the graphene aqueous dispersion for 20 min, taken out and left at room temperature for 12 h, and then the polyester film was placed in a pure bismuth solution for 24 h to obtain a reduced monolayer. Graphene conductive film. It has a thickness of 15 nm and a conductivity of 6X 10- 1 S/cm. The invention has the following advantages:
1)本发明提供的单层或寡层石墨烯可溶于水或有机溶剂,容易实现在 各种材料或物体表面形成均匀的碳膜; 相比传统的化学气象沉积、 等离子 体溅射等方法, 本方法工艺筒单、 成本低廉、 设备投入小、 并能适用于具 有复杂形状的产品。  1) The single-layer or oligo-layer graphene provided by the invention is soluble in water or an organic solvent, and it is easy to form a uniform carbon film on various materials or objects; compared with conventional chemical meteorological deposition, plasma sputtering, etc. The method has the advantages of simple process, low cost, small equipment investment, and can be applied to products with complicated shapes.
2)与绝缘的金刚石薄膜和非晶态碳膜相比,基于石墨烯的碳膜具有很 好的导电性石墨烯具有很好的导电性和抗静电效果。  2) Compared with the insulating diamond film and the amorphous carbon film, the graphene-based carbon film has excellent conductivity and graphene has good electrical conductivity and antistatic effect.
3)石墨烯具有已知材料最好的力学性能,使得本发明提供的碳膜具有 较高的强度和模量, 有可能在建筑、 机械及航空航天等特殊环境下使用。  3) Graphene has the best mechanical properties of known materials, so that the carbon film provided by the present invention has high strength and modulus, and may be used in special environments such as construction, machinery, and aerospace.
4)由于石墨烯具有优良的导热性能,使得本发明提供的碳膜具有易于 散热等优点, 可望在精密仪器及微电子等领域获得应用。  4) Since the graphene has excellent thermal conductivity, the carbon film provided by the present invention has the advantages of easy heat dissipation, and is expected to be applied in the fields of precision instruments and microelectronics.
5)当石墨烯碳膜的厚度小于 10纳米时, 具有很好的透光性, 可以获 得透明导电薄膜。  5) When the thickness of the graphene carbon film is less than 10 nm, it has good light transmittance, and a transparent conductive film can be obtained.
基于以上优点,本发明的基于单层或寡层石墨烯的碳膜在机械、建筑、 医疗等传统领域以及精密仪器、微电子及航空航天等高技术领域具有很好 的应用前景。  Based on the above advantages, the single-layer or oligo-graphene-based carbon film of the present invention has a good application prospect in the fields of mechanical, construction, medical and other traditional fields as well as high-precision instruments, microelectronics and aerospace.

Claims

权利要求书: Claims:
1、 制备导电膜的方法, 其包括如下步骤:  A method of preparing a conductive film, comprising the steps of:
1 ) 将含有官能化石墨烯的溶液涂覆在基体材料表面, 形成薄膜; 以 及  1) coating a solution containing functionalized graphene on the surface of the substrate to form a film;
2 )将步骤 1 ) 中获得的负载于基体材料上的薄膜进行化学还原和 /或  2) chemically reducing and/or chemically reducing the film supported on the substrate obtained in step 1)
2、 如权利要求 1所述的方法, 其中所述官能化石墨烯是以石墨为原 料, 通过化学氧化的方法制备的。 2. The method of claim 1 wherein the functionalized graphene is prepared by chemical oxidation using graphite as a raw material.
3、 如权利要求 1 所述的方法, 其中所述官能化石墨烯是使化学氧化 后的石墨烯与有机官能化试剂反应而制备的, 其中所用的有机官能化试剂为 异氰酸酯类化合物。  3. The method of claim 1 wherein the functionalized graphene is prepared by reacting a chemically oxidized graphene with an organic functionalizing agent, wherein the organofunctionalizing agent used is an isocyanate compound.
4、 如权利要求 3所述的方法, 其中所述异氰酸酯类化合物选自单异氰 酸酯类化合物或二异氰酸酯类化合物, 所述单异氰酸酯类化合物选自苯异氰 酸酯、叔丁烷异氰酸酯、 环己烷异氰酸酯、 己烷异氰酸酯、 氰基苯异氰酸酯、 乙酰基苯异氰酸酯、 异氰酸根合苯蹟酸叠氮化物, 所述二异氰酸酯类化合物 选自曱苯二异氰酸酯、 二苯基曱烷二异氰酸酯、 六亚曱基 -1,6-二异氰酸酯、 异佛尔酮二异氰酸酯、 二环己基曱烷二异氰酸酯。  4. The method according to claim 3, wherein the isocyanate compound is selected from a monoisocyanate compound or a diisocyanate compound, and the monoisocyanate compound is selected from the group consisting of phenyl isocyanate, t-butane isocyanate, and cyclohexane isocyanate. Hexane isocyanate, cyanophenyl isocyanate, acetyl phenyl isocyanate, isocyanato benzoic acid azide, the diisocyanate compound is selected from the group consisting of decene diisocyanate, diphenyl decane diisocyanate, hexamethylene fluorenyl -1,6-diisocyanate, isophorone diisocyanate, dicyclohexyldecane diisocyanate.
5、 如权利要求 3所述的方法, 其中所述溶液中所用的溶剂选自水、 丙酮、 Ν,Ν-二曱基曱酰胺(DMF )、 乙醇、 苯、 二氯苯、 四氢呋喃和 /或乙 腈。  5. The method according to claim 3, wherein the solvent used in the solution is selected from the group consisting of water, acetone, hydrazine, hydrazine-dimercaptoamide (DMF), ethanol, benzene, dichlorobenzene, tetrahydrofuran and/or Acetonitrile.
6、 如前述任一权利要求所述的方法, 其中所述官能化石墨烯的溶液 的浓度为 0.1 mg/mL至 10 mg/mL。  6. A method according to any of the preceding claims, wherein the concentration of the functionalized graphene solution is from 0.1 mg/mL to 10 mg/mL.
7、 如前述任一权利要求所述的方法, 其中所用的涂覆的方法为浸泡、 旋涂、 喷涂或浇铸。  7. A method according to any of the preceding claims, wherein the method of coating used is soaking, spin coating, spraying or casting.
8、 如前述任一权利要求所述的方法, 其中所述的基体材料选自钢铁、 玻璃、 陶瓷、 石英、 碳材料、 硅材料和 /或有机物材料。  8. A method according to any of the preceding claims, wherein said matrix material is selected from the group consisting of steel, glass, ceramic, quartz, carbon material, silicon material and/or organic material.
9、 如权利要求 8所述的方法, 其中所述的有机物材料选自聚氨酯、 聚丙烯酸酯、 聚酯、 聚酰胺、 ABS、 聚烯烃、 聚碳酸酯、 聚氯乙烯、 聚酰 亚胺、 环氧树脂、 酚醛树脂和 /或橡胶。  9. The method according to claim 8, wherein the organic material is selected from the group consisting of polyurethane, polyacrylate, polyester, polyamide, ABS, polyolefin, polycarbonate, polyvinyl chloride, polyimide, and ring. Oxygen resin, phenolic resin and/or rubber.
10、 如权利要求 8的方法, 其中当基体材料为有机物材料, 并且含有 官能化石墨烯的溶液为水性溶液时, 所述方法在步骤 1 )之前还包括使所 述有机物材料的表面活化、 增强所述有机物材料的表面的亲水性的步骤, 所述活化优选为将基体材料浸泡在浓硫酸中,或者在基体材料的表面涂覆 聚苯乙烯亚胺和聚苯乙婦磺酸钠。 10. The method of claim 8 wherein when the substrate material is an organic material and the solution containing the functionalized graphene is an aqueous solution, the method further comprises prior to step 1) The step of activating the surface of the organic material and enhancing the hydrophilicity of the surface of the organic material, the activation preferably immersing the base material in concentrated sulfuric acid or coating the surface of the base material with polystyrene and poly Sodium phenate sulfonate.
11、 如前述任一权利要求所述的方法, 其中所述化学还原和所述焙烧 单独使用, 或者联合使用。  A method according to any of the preceding claims, wherein said chemical reduction and said calcination are used singly or in combination.
12、 如前述任一权利要求所述的方法, 其中所述化学还原中所用的还 原剂为肼、 水合肼、 二曱肼和 /或诸如硼氢化钠和硼氢化钾的硼氢化物。  A method according to any of the preceding claims, wherein the reducing agent used in said chemical reduction is hydrazine, hydrazine hydrate, dihydrazine and/or a borohydride such as sodium borohydride and potassium borohydride.
13、 如前述任一权利要求所述的方法, 其中所述化学还原为水合肼蒸 汽熏蒸。  13. A method according to any of the preceding claims, wherein the chemical reduction is hydrazine hydrazine steam fumigation.
14、 如前述任一权利要求所述的方法, 其中所述焙烧在真空下进行。 14. A method according to any of the preceding claims, wherein the calcination is carried out under vacuum.
15、 如权利要求 1至 13中任一权利要求所述的方法, 其中所述焙烧 在诸如氮气、 氩气、 氦气等惰性气体保护下进行。 The method according to any one of claims 1 to 13, wherein the calcination is carried out under the protection of an inert gas such as nitrogen, argon or helium.
16、 通过前述任一权利要求所述的方法制备的导电膜。  16. A conductive film produced by the method of any of the preceding claims.
17、 改变基体材料表面性质的方法, 所述方法包括通过权利要求 1-14 所述的方法在所述基体材料表面形成导电膜。  17. A method of modifying the surface properties of a substrate material, the method comprising forming a conductive film on the surface of the substrate material by the method of claims 1-14.
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