CN110002427B - High-thermal-conductivity carbon film and preparation method thereof - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 32
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- 229910052744 lithium Inorganic materials 0.000 abstract description 2
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
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Abstract
本发明涉及导热材料领域,尤其涉及一种高导热碳膜的制备方法及其制备的高导热碳膜,该方法包括如下步骤:步骤一,将石墨烯悬浮液与具有强亲水性的含有苯环的短链聚合物通过物理搅拌方式混合;步骤二,将步骤一得到的混合物通过旋涂方式铺在晶圆上而形成薄膜;步骤三,将步骤二中得到的薄膜烘干后在真空环境中通过高温裂解的方式获得含有垂直晶圆方向排列的石墨烯的高导热碳膜。本发明的制备方法简单且成本低,通过本发明的方法制备的高导热碳膜可做成有支撑的高导热膜,也可获得独立的高导热碳膜,还可衍生出碳和塑料的复合膜;通过图案化后再裂解可以作成具有高可逆容量的锂电池活性正电极,为可制作碳基的生物传感器等满足特殊性能的应用。
The invention relates to the field of thermally conductive materials, in particular to a method for preparing a high thermal conductivity carbon film and the prepared high thermal conductivity carbon film. The method comprises the following steps: step 1, mixing a graphene suspension with a strongly hydrophilic benzene-containing The cyclic short-chain polymers are mixed by physical stirring; in step 2, the mixture obtained in step 1 is spread on a wafer by spin coating to form a film; in step 3, the film obtained in step 2 is dried in a vacuum environment A high thermal conductivity carbon film containing graphene aligned perpendicular to the wafer direction is obtained by high-temperature pyrolysis. The preparation method of the invention is simple and low in cost, the high thermal conductivity carbon film prepared by the method of the invention can be made into a supported high thermal conductivity film, an independent high thermal conductivity carbon film can also be obtained, and a composite of carbon and plastic can also be derived Membrane; through patterning and then cracking, it can be made into a lithium battery active positive electrode with high reversible capacity, which can be used to make carbon-based biosensors and other applications that meet special properties.
Description
技术领域technical field
本发明涉及导热材料领域,尤其涉及一种具有高导热性能的复合碳膜。The invention relates to the field of thermally conductive materials, in particular to a composite carbon film with high thermal conductivity.
背景技术Background technique
散热是现今的热门话题,是决定现代电子器件是否能满足可靠性和高性能的关键因素。而高导热能力的界面材料是个很重要的因素,高导热复合材料是先进封装和LED及功率电子等的封装冷却的重要元素,如现有技术1所述。高聚物基体的复合材料是最为普遍的一种复合材料,比如很多导电银胶、导热硅胶垫等的使用,其中的填料多为高导热金属和陶瓷颗粒。最近10年,石墨烯以其超高的面内导热、及因弹道输运特性而具有的很高面内导电力和优秀的机械性能引人注目。石墨烯(graphene)是由碳原子按照SP2杂化轨道组成的六角型呈蜂窝状的结构,厚度仅为单层碳原子直径。由于其独特的二维结构以及优异的晶体品质,石墨烯拥有巨大的比表面积(2630m2g-1)、导电性(电子迁移率20000cm2V-1S-1)、导热性(导热系数可达系数近5300W/Km)、机械力学强度(42N/m)等方面均表现出非常优越的单方向性能。然而,它的超高单向特性一直因为无法在合成复合材料时其各石墨烯单体难以统一方向而不能有效地发挥出来,尤其是在垂直于平面的导热率的提升技术是个难点,人们在此投入了大量精力来寻找有效的解决方案。有的是在生产特别垂直生长的石墨烯后,仅能直接做一些个别器件的制造,如现有技术2,也有快速制作大范围垂直取向的石墨烯放电还原装置及方法,如现有技术3和现有技术4,相比于其他垂直生产方法来的快速和省钱。但如何有效地利用这些垂直生长的石墨烯又是个很艰难的任务。那么,能够有效地将生产好的石墨烯纳米片垂直整向再合成复合材料是近年来人们研发的方向(现有技术1)。比较有效的方法是通过一系列表面改性合成出石墨烯高聚物复合材料,然后横向切片形成含竖直石墨烯的一个个薄片(现有技术5);也有在做流延胶体时候施以垂直磁场来获得含垂直石墨烯导热填料的复合导热胶(现有技术6)。但是,这些合成的方法仍比较复杂和破费,而且是高聚物基复合材料。本专利是单纯针对复合碳膜的制造,有人利用设计孔洞模板,结合多层生长纳米碳基材料方法形成相互穿插的多层纳米碳材料的导热碳复合膜,但此碳膜至少不具有统一的导热方向,导热集中在大致垂直和平行于热流的两个方向或者多个方向,比较分散(现有技术7);由本专利制造的复合碳膜中的石墨烯会获得垂直膜的统一方向,其垂直向导热率会很高(>500~2000W/mK)。目前生产石墨烯的方法和厂家很多,如果能够将以简易低廉方式,例如球磨石墨的方法制作的方式(现有技术8)等,做出的石墨烯纳米片拿来作为填料,以本发明中的简易方法合成含垂直排列石墨烯纳米片的高导热复合碳膜材料就是极有推广前景的价值。Thermal dissipation is a hot topic these days and is a key factor in determining whether modern electronic devices can meet the reliability and high performance requirements. The interface material with high thermal conductivity is a very important factor, and the high thermal conductivity composite material is an important element for advanced packaging and packaging cooling of LED and power electronics, etc., as described in the prior art 1. The composite material of the polymer matrix is the most common kind of composite material, such as the use of many conductive silver glue, thermal conductive silicone pad, etc., and the fillers are mostly high thermal conductivity metal and ceramic particles. In the past 10 years, graphene has attracted attention for its ultra-high in-plane thermal conductivity, high in-plane electrical conductivity due to ballistic transport properties, and excellent mechanical properties. Graphene is a hexagonal honeycomb structure composed of carbon atoms according to SP2 hybrid orbits, and the thickness is only the diameter of a single layer of carbon atoms. Due to its unique two-dimensional structure and excellent crystal quality, graphene has a huge specific surface area (2630m2g-1), electrical conductivity (electron mobility 20000cm2V-1S-1), thermal conductivity (thermal conductivity can reach a coefficient of nearly 5300W/ Km), mechanical strength (42N/m) and other aspects show very superior unidirectional performance. However, its ultra-high unidirectional characteristic has been unable to be effectively exerted because it is difficult to unify the direction of each graphene monomer when synthesizing composite materials, especially in the technology of improving the thermal conductivity perpendicular to the plane. This put a lot of effort into finding an efficient solution. Some are that after the production of particularly vertically grown graphene, only some individual devices can be directly manufactured, such as
现有技术1:“Microstructure engineering of graphene towards highlythermal conductive composites”Haoming Fang,Shu-lin Bai,Ching Ping Wong,Composites Part A 112(2018)216-238;Prior art 1: "Microstructure engineering of graphene towards highly thermal conductive composites" Haoming Fang, Shu-lin Bai, Ching Ping Wong, Composites Part A 112 (2018) 216-238;
现有技术2:WO2012/163130A1;Prior art 2: WO2012/163130A1;
现有技术3:CN102560437A;Prior art 3: CN102560437A;
现有技术4:CN101966987BPrior art 4: CN101966987B
现有技术5:CN108504016APrior art 5: CN108504016A
现有技术6:CN106928886BPrior art 6: CN106928886B
现有技术7:CN105803242BPrior art 7: CN105803242B
现有技术8:CN103570004A。Prior art 8: CN103570004A.
发明内容SUMMARY OF THE INVENTION
为了解决上述问题,充分发挥石墨烯的超高导热性,本发明提供一种高导热碳膜的制备方法及其制备的碳膜,该方法将石墨烯纳米片通过简易方法垂直取向,合成了高导热碳材料复合膜,形成单一碳元素的复合膜。该方法生产过程简易,并由于基材与填料界面结合性好,同时避免了高聚物基材的低导热率,制备出的复合碳膜导热率可以高达2000W/km以上,高于大多数石墨烯高聚物复合材料和碳膜的导热率。并且由该方法制备出的碳膜机械性能和致密度可调,成本低,可以匹配半导体制程工艺。In order to solve the above problems and give full play to the ultra-high thermal conductivity of graphene, the present invention provides a preparation method of a high thermal conductivity carbon film and the prepared carbon film. The thermally conductive carbon material composite film forms a composite film of a single carbon element. The production process of this method is simple, and due to the good interface between the substrate and the filler, and at the same time avoiding the low thermal conductivity of the polymer substrate, the thermal conductivity of the prepared composite carbon film can be as high as 2000W/km or more, which is higher than that of most graphites. Thermal conductivity of olefin polymer composites and carbon films. And the carbon film prepared by the method has adjustable mechanical properties and density, low cost, and can match the semiconductor manufacturing process.
为实现上述目的,本发明提供的高导热碳膜的制备方法包括如下步骤:In order to achieve the above purpose, the preparation method of the high thermal conductivity carbon film provided by the present invention comprises the following steps:
步骤一,将石墨烯悬浮液与含有苯环的短链聚合物混合,得到混合物A;Step 1, the graphene suspension is mixed with the short-chain polymer containing benzene ring to obtain mixture A;
步骤二,将得到的混合物A铺在晶圆上,使得晶圆表面不同位置的混合物A厚度尽可能一致,从而形成薄膜B;In
步骤三,将覆盖有薄膜B的晶圆烘干;Step 3, drying the wafer covered with the film B;
步骤四,通过高温裂解的方式获得直接生长在晶圆表面的具有垂直形貌的石墨烯构成的高导热碳膜C。In step 4, a high thermal conductivity carbon film C composed of graphene with a vertical morphology directly grown on the surface of the wafer is obtained by high-temperature pyrolysis.
优选地,在所述步骤一之前,还包括表面处理步骤,对所述石墨烯悬浮液进行与碳纳米管联合的表面处理。Preferably, before the first step, a surface treatment step is also included, and the graphene suspension is subjected to surface treatment combined with carbon nanotubes.
优选地,所述步骤一中的所述短链聚合物具有强亲水性。Preferably, the short-chain polymer in the first step has strong hydrophilicity.
优选地,所述步骤一中的所述短链聚合物为线性酚醛树脂。Preferably, the short-chain polymer in the first step is a novolac resin.
优选地,所述步骤一中的所述混合采用物理搅拌方式。Preferably, the mixing in the step 1 adopts a physical stirring method.
优选地,所述步骤二中的所述晶圆为耐高温而且表面光滑的基材。Preferably, the wafer in the second step is a substrate with high temperature resistance and smooth surface.
优选地,所述步骤二中,通过旋涂方式将所述混合物A铺在晶圆上,并通过旋转晶圆将多余的混合物甩出所述晶圆表面,从而使得所述晶圆表面不同位置的混合物厚度尽可能一致。Preferably, in the second step, the mixture A is spread on the wafer by spin coating, and the excess mixture is thrown off the surface of the wafer by rotating the wafer, so that the surface of the wafer is in different positions The thickness of the mixture is as consistent as possible.
优选地,所述步骤四中的所述高温裂解方式为真空传导加热裂解方式;也可以使用其他特殊高温裂解方式,但加热氛围需要保证真空或者无氧。Preferably, the high-temperature pyrolysis method in the fourth step is a vacuum conduction heating pyrolysis method; other special high-temperature pyrolysis methods can also be used, but the heating atmosphere needs to ensure vacuum or oxygen-free.
优选地,所述步骤二中形成的所述薄膜B厚度小于10um。Preferably, the thickness of the thin film B formed in the second step is less than 10um.
另一方面,本发明还提供一种由上述制备方法制备得到的高导热碳膜。On the other hand, the present invention also provides a high thermal conductivity carbon film prepared by the above preparation method.
本发明运用简易的材料生产方法,采用简单低成本制备方法,实现了规模化生产,并可以匹配半导体制程,可制造具有高可逆容量的电池电极(根据现有技术9和现有技术10估计可逆容量远高于700mAh/g),也可为制作碳基的生物传感器等提供晶圆,将背面晶圆剪薄可做成有支撑的高导热膜,也可获得独立的高导热碳膜,如有需求可通过热压方法叠加成较厚的碳膜,还可衍生出含导热碳膜的高聚物基的复合膜,也可获得对基体具有保护性能的导热碳膜,代替其他贵重材料的保护膜。本发明利用真空无氧高温裂解技术在晶圆背面形成碳膜。通过本发明的方法制成的碳膜,机械性能和致密度等特性具有可调性,例如硬度、弹性模量、刚度等参数可根据高温裂解工艺参数进行调整。并且同为碳元素的基材与填料界面结合性好,提升了复合膜的机械和导热性能,同时又脱离了高聚物复合材料中相对低导热率的基材。The present invention uses a simple material production method, adopts a simple and low-cost preparation method, realizes large-scale production, can match the semiconductor manufacturing process, and can manufacture battery electrodes with high reversible capacity (estimated reversible according to the prior art 9 and prior art 10). The capacity is much higher than 700mAh/g), and it can also provide wafers for the production of carbon-based biosensors. The back wafer can be cut into a supported high thermal conductivity film, and an independent high thermal conductivity carbon film can also be obtained, such as If there is a need, it can be superimposed into a thicker carbon film by hot pressing, and a polymer-based composite film containing a thermally conductive carbon film can also be derived. protective film. The invention utilizes the vacuum oxygen-free high temperature cracking technology to form a carbon film on the back of the wafer. The carbon film prepared by the method of the present invention has adjustable properties such as mechanical properties and density. For example, parameters such as hardness, elastic modulus and stiffness can be adjusted according to high temperature pyrolysis process parameters. In addition, the base material, which is also a carbon element, has good interface bonding with the filler, which improves the mechanical and thermal conductivity of the composite film, and at the same time removes the relatively low thermal conductivity base material in the polymer composite material.
现有技术9:T Zheng,Q.Zhang,and J.R.Dahn,J.Electrochem.Soc.142(1995),L211Prior art 9: T Zheng, Q. Zhang, and J. R. Dahn, J. Electrochem. Soc. 142 (1995), L211
现有技术10:J.S.Xue and J.R.Dahn,J.Electrochem.Soc.142(1995)3668Prior art 10: J.S.Xue and J.R.Dahn, J. Electrochem. Soc. 142 (1995) 3668
附图说明Description of drawings
图1为本发明的制备方法流程图。Fig. 1 is the flow chart of the preparation method of the present invention.
图2(a)为本发明的制备方法的步骤一的示意图。Figure 2(a) is a schematic diagram of step 1 of the preparation method of the present invention.
图2(b)为本发明的制备方法的步骤二的示意图。Figure 2(b) is a schematic diagram of
图2(c)为本发明的制备方法的步骤三和四的示意图。Figure 2(c) is a schematic diagram of steps 3 and 4 of the preparation method of the present invention.
图3(a)和3(b)为采用本发明的方法制备出的碳膜的示意图。3(a) and 3(b) are schematic diagrams of carbon films prepared by the method of the present invention.
图4(a)为碳膜生长方式示意图。FIG. 4( a ) is a schematic diagram of a carbon film growth method.
图4(b)为生长出的碳膜的示意图。Figure 4(b) is a schematic diagram of the grown carbon film.
具体实施方式Detailed ways
为了使本发明的目的、特征和优点更加的清晰,以下结合附图,对本发明的具体实施方式做出更为详细的说明,在下面的描述中,阐述了很多具体的细节以便于充分的理解本发明,但是本发明能够以很多不同于描述的其他方式来实施。因此,本发明不受以下公开的具体实施的限制。In order to make the objectives, features and advantages of the present invention clearer, the specific embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. In the following description, many specific details are set forth to facilitate full understanding. The invention, but the invention can be carried out in many other ways than described. Accordingly, the present invention is not limited by the specific implementations disclosed below.
在一优选的实施方式中,如图1所示,本发明的高导热碳膜的制备方法包括以下步骤:In a preferred embodiment, as shown in FIG. 1 , the preparation method of the high thermal conductivity carbon film of the present invention comprises the following steps:
S101,将石墨烯悬浮液与具有强亲水性的含有苯环的短链聚合物(比如AZ正性光刻胶等线性酚醛树脂)通过物理搅拌方式混合,得到混合物A。混合方式如图2(a)所示。在该混合步骤之前,还可以对石墨烯悬浮液进行与碳纳米管联合的表面处理,或者不经过表面处理。S101, the graphene suspension is mixed with a strong hydrophilic short-chain polymer containing a benzene ring (such as a novolac resin such as AZ positive photoresist) through physical stirring to obtain a mixture A. The mixing method is shown in Figure 2(a). Prior to this mixing step, the graphene suspension can also be surface-treated in conjunction with carbon nanotubes, or not.
S102,将步骤S101得到的混合物A通过旋涂方式铺在晶圆上,类似于半导体光刻胶的涂覆形式,并通过旋转晶圆将多余的混合物A甩出所述晶圆表面,并使得晶圆表面不同位置的混合物厚度尽可能一致,从而形成薄膜B,比如厚度小于10um厚度的薄膜,旋涂方式如图2(b)所示。其中,晶圆也可以用其他耐高温而且表面光滑的基材替代硅(Si),比如陶瓷基材,但普通玻璃基材由于不耐800℃高温,不宜使用。S102, the mixture A obtained in step S101 is spread on the wafer by spin coating, which is similar to the coating form of semiconductor photoresist, and the excess mixture A is thrown off the surface of the wafer by rotating the wafer, and makes The thickness of the mixture at different positions on the wafer surface should be as consistent as possible to form a thin film B, such as a thin film with a thickness of less than 10um. The spin coating method is shown in Figure 2(b). Among them, the wafer can also replace silicon (Si) with other high temperature resistant and smooth surface substrates, such as ceramic substrates, but ordinary glass substrates are not suitable for use because they are not resistant to high temperature of 800°C.
S103,将步骤S102中得到的涂覆有薄膜B的晶圆烘干。S103, drying the wafer coated with the thin film B obtained in step S102.
S104,烘干后,在真空环境中通过真空高温裂解的方式获得直接生长在晶圆表面的具有含垂直方向的石墨烯高导热碳膜C,如图2(c)所示。S104 , after drying, a highly thermally conductive carbon film C with graphene having a vertical direction directly grown on the surface of the wafer is obtained by vacuum pyrolysis in a vacuum environment, as shown in FIG. 2( c ).
其中,真空高温裂解的裂解温度一般控制在1000℃左右,时间为一个小时,真空度大约为10-5torr,温度和时间还可以根据碳膜材料性能的需求上下调整;裂解时,真空气氛保证裂解质量和减少杂质混入,同时可获得致密碳膜;也可以根据低密度等需求使用惰性气体(比如,Ar,N2,N2/H2合成气体等)。高温裂解不局限于传统传导加热技术。高温前,可以根据需要加上一个小时的低温脱水处理,温度大约在250℃。Among them, the pyrolysis temperature of vacuum pyrolysis is generally controlled at about 1000℃, the time is one hour, and the vacuum degree is about 10 -5 torr. The temperature and time can also be adjusted up and down according to the performance requirements of the carbon film material; during pyrolysis, the vacuum atmosphere ensures The quality of cracking and the mixing of impurities are reduced, and dense carbon films can be obtained at the same time; inert gases (such as Ar, N2, N2/H2 synthesis gas, etc.) can also be used according to the requirements of low density. Pyrolysis is not limited to traditional conduction heating techniques. Before the high temperature, one hour of low temperature dehydration treatment can be added as needed, and the temperature is about 250 ℃.
通过上述步骤形成的碳膜结构如下:The structure of the carbon film formed by the above steps is as follows:
如图3(a)所示,该碳膜具有扫描电子显微镜SEM所显示的垂直形貌的断面,其中大部分苯环分子链垂直或者接近垂直于表面,如图3(b)所示,石墨烯面会沿着苯环分子链的间隙狭缝生长出来,如图4(a)所示,这是一种全新的生长方式。最后生长出的碳膜如图4(b)所示。As shown in Fig. 3(a), the carbon film has a vertical cross-section shown by SEM, in which most of the benzene ring molecular chains are perpendicular or nearly perpendicular to the surface, as shown in Fig. 3(b), the graphite The olefinic surface will grow along the gap slit of the benzene ring molecular chain, as shown in Fig. 4(a), which is a brand new growth method. The finally grown carbon film is shown in Fig. 4(b).
通过上述步骤形成碳膜后,该碳膜可以有多种使用形式:After the carbon film is formed through the above steps, the carbon film can be used in various forms:
1)通过基材特殊处理可以将所述薄膜剥离出来形成薄层碳膜,例如碳膜厚度小于5um的碳膜;1) The thin film can be peeled off to form a thin carbon film through special treatment of the substrate, such as a carbon film with a carbon film thickness less than 5um;
2)根据厚度需求,多个薄层碳膜可以高温压接形成较厚的碳膜;2) According to the thickness requirements, multiple thin carbon films can be crimped at high temperature to form thicker carbon films;
3)该碳膜也可以与高聚物一起形成含单层或者多层碳膜的预制品或者固化膜;3) The carbon film can also form a preform or cured film containing a single-layer or multi-layer carbon film together with the polymer;
4)也可以将基材直接减薄,从而形成有基材支撑的复合膜;4) The substrate can also be directly thinned to form a composite film supported by the substrate;
5)也可以作为生长在某种基材上作为保护基材的高导热碳膜;5) It can also be used as a high thermal conductivity carbon film grown on a certain substrate as a protective substrate;
6)还可以在未碳化前用光刻工艺形成图案,碳化后做成碳基传感器;6) Patterns can also be formed by photolithography before carbonization, and carbon-based sensors can be made after carbonization;
7)还可用此制备具有高可逆容量的锂电池的活性电极。7) This can also be used to prepare active electrodes of lithium batteries with high reversible capacity.
通过上述制备方法,极大地提升了该碳膜的导热率,从而解决了芯片工作时的热管理问题。Through the above preparation method, the thermal conductivity of the carbon film is greatly improved, thereby solving the problem of thermal management during chip operation.
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。The above are only the preferred embodiments of the present invention. It should be pointed out that for those skilled in the art, without departing from the principles of the present invention, several improvements and modifications can be made. It should be regarded as the protection scope of the present invention.
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