WO2010072534A1 - Structure de composant exempte de métal d'apport et résistant aux hautes températures et procédé de mise en contact électrique - Google Patents

Structure de composant exempte de métal d'apport et résistant aux hautes températures et procédé de mise en contact électrique Download PDF

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Publication number
WO2010072534A1
WO2010072534A1 PCT/EP2009/066336 EP2009066336W WO2010072534A1 WO 2010072534 A1 WO2010072534 A1 WO 2010072534A1 EP 2009066336 W EP2009066336 W EP 2009066336W WO 2010072534 A1 WO2010072534 A1 WO 2010072534A1
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WIPO (PCT)
Prior art keywords
intermediate layer
layer
layers
component
metal layer
Prior art date
Application number
PCT/EP2009/066336
Other languages
German (de)
English (en)
Inventor
Daniel Wolde-Giorgis
Martin Rittner
Alfred Goerlach
Thomas Kalich
Michael Guenther
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to EP09799060A priority Critical patent/EP2382654A1/fr
Publication of WO2010072534A1 publication Critical patent/WO2010072534A1/fr

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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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Definitions

  • the invention relates to a method for producing electrical contacts to components as well as a component structure with solder-free and high-temperature resistant contact points.
  • Electrical components comprise an acting component and connecting elements, with which the acting component can be contacted from the outside.
  • solder is used to make electrical contacts in circuits and devices.
  • the soft solder used for this purpose has a low melting point so as not to destroy the functional component of the component during soldering.
  • the low melting point means that the soldered circuit can only be used in a temperature range which is significantly below the melting temperature of the solder material.
  • some brazing materials are lead alloys, so environmental considerations must also be taken into account when it comes to disposal. For this purpose, environmental standards such as RoHS have already been developed, which in principle exclude leaded solders.
  • a housing that protects the top of the chip which is usually provided by molded housing mass is missing.
  • this material combination and structure leads to strong mechanical stresses, especially on the chip. This results in a higher temperature sensitivity, especially with strong and frequent temperature fluctuations, and thus a high failure rate.
  • the different thermal expansion coefficients lead to a relatively low maximum temperature, at which a further increase leads to undesirably high mechanical stresses between the chip and the surrounding structure. This limits the range of application at high temperatures.
  • the invention enables use at high temperatures and with large temperature fluctuations and also reduces mechanical stresses between the component and the contact structures connected thereto.
  • the inventive construction allows the processing of electronic components or electrical components, without exposing them to high forces during contact.
  • the intermediate layers allow a symmetrical contacting and thus a bilateral embedding of the component in a deformable layer which, in the case of the contacting process provided by pressure, is produced by plastic (and partly elastic) deformation. takes and thus protects in particular brittle components from excessive mechanical stress.
  • the intermediate layers arranged on both sides protect the component against strong forces, which result at higher temperatures and at high temperature fluctuations.
  • the component By means of the deformable intermediate layers, the component is fixed "floating", so that mechanical buffers are provided on both sides of the component through the respective intermediate layer, whose deformation significantly reduces the deformation of the component due to deformation
  • the pores formally increase the deformability, so that even at low temperatures and low forces the intermediate layer penetrates through the pores, which in turn provides for the formation of deformations Deformation protects the intermediate electrical or electronic component.
  • the invention is thus implemented by a component structure comprising: an electrical or electronic component having an upper contact surface on an upper side of the component and a lower contact surface on a lower side of the component.
  • the component is preferably in the form of a flat shape, for example as a semiconductor die, for example a section of a divided silicon wafer.
  • this requires a bearing with low mechanical stress, since the thickness is thin relative to the cross-sectional area, and the material itself hardly shows any elastic properties, or can be destroyed by breakage even at low mechanical deformations.
  • the invention relates to components designed as semiconductor wafers (or a separated part thereof).
  • the structure of the invention is also suitable for substrate-bonded circuits, Dickf ⁇ lmscariaen or Dünnf ⁇ lmscariaen, which are also formed flat and due to their thin design and the associated material properties at low deformations also run the risk of being destroyed.
  • the component preferably comprises only one upper contact surface and only one lower contact surface or a plurality of upper and lower contact surfaces, which are each directly electrically connected to one another or can be electrically connected directly to one another without negatively influencing the operation of the circuit.
  • the device structure further comprises an upper metal layer and a lower metal layer, as well as an upper porous intermediate layer and a lower porous intermediate layer.
  • the intermediate layer serves, on the one hand, for contacting the respective side of the component and, on the other hand, for connection to the metal layer.
  • a porous intermediate layer is always provided between a respective side of the component and a metal layer.
  • the intermediate layer connects the respective metal layer and the respective contact surface of the component mechanically and electrically conductive (ie galvanically). This results in a substantially symmetrical structure, in which the component is located in the middle and the opposite contact surfaces of the device are connected to the intermediate layer, which in turn each contacted a more outer metal layer.
  • the respective (i.e., the upper or lower) intermediate layer may be directly connected to the respective metal layer (i.e., upper or lower).
  • the compound may also be provided via a surface coating.
  • the surface coating is preferably applied on the side of the metal layer facing the respective intermediate layer.
  • the upper metal layer may be connected to the upper intermediate layer as the lower intermediate layer is bonded to the lower metal layer, or the metal layers may be connected in different ways to the associated intermediate layer.
  • a surface coating of a metal layer i.e., the lower or the upper
  • both metal layers may be provided with a surface coating.
  • the surface coating is attached to the inside of the respective metal layer, i. on the side of the metal layer facing the intermediate layer and also the device.
  • the material of the surface coating may include Au, Ag, Ni, Pt, Pd, alloys of these elements, NiP, or a combination.
  • NiP has a phosphorus content of less than 10%, less than 6%, less than 3% or less than 2% by weight, and a phosphorus content of more than 1% by weight.
  • the phosphorus content may be greater than 0.5% or greater than 0.1% by weight.
  • the contact surfaces of the electrical or electronic component may have a surface coating, preferably a surface coating, which corresponds to the surface coating of the metal layers, as described above.
  • the surface coating of the component or its contact surface or contact surfaces faces the intermediate layer.
  • the surface coating of the contact surfaces, the metal layer, or both structural components may be single-layered or multi-layered, wherein each layer may comprise another of these materials or a different mixture or alloy of these materials.
  • the materials of the layers can merge into one another at interfaces of adjacent layers, for example according to a diffusion profile.
  • a multi-layer structure of the surface coating of the metal layers or the contact surfaces of the device may comprise a first layer and a second layer which faces the intermediate layer and which directly or indirectly adjoins it.
  • the first layer may in particular comprise Ni, or NiP as described above, and the second layer may in particular comprise Au, Ag, Pt, Pd or a combination.
  • the first layer of the surface coating of the contact surfaces directly or indirectly adjoins the component, and the first layer of the surface coating of the metal layer directly or indirectly adjoins the metal layer.
  • the contact surfaces of the electrical or electronic component are arranged on both outer sides of the component and comprise a conductive surface.
  • the conductive surface preferably extends over the entire surface of the respective side of the component.
  • the conductive surface may protrude from the surface of the device, be offset in the device toward the center of the device or aligned with the entire surface of the device, if the contact surface does not encompass the entire surface of the respective side of the device.
  • Particularly suitable conductive surfaces are heavily doped surface layers of a semiconductor structure.
  • a metallization layer of a semiconductor structure may provide the contact area.
  • the upper contact surface is preferably formed as the lower contact surface, but also the contact surfaces may be formed differently, for example, with different structures or with different materials (for example, heavily doped semiconductor or metal layer).
  • the contact surfaces are planar, ie extend along a plane, for example in the case of a semiconductor die, in which as well the entire two opposite surfaces extend along a plane.
  • the two contact surfaces may have portions of different heights, the maximum height difference preferably being significantly less than a dimension (eg, length or width) of the substrate surface, for example, less than 5%.
  • the intermediate layer can absorb such unevenness by its deformability, without producing inhomogeneities of the punctiform contact resistance or of the pressure exerted on the component.
  • the intermediate layer preferably has a thickness of 5-200 ⁇ m, more preferably 10-100 ⁇ m, further preferably 20-70 ⁇ m or particularly preferably 30-50 ⁇ m.
  • the intermediate layer is formed of Ag, Au, Cu, Al or a mixture of one or more of these components.
  • the intermediate layer preferably comprises a surface which directly adjoins the component, and which is planar or has a profile complementary to the component surface.
  • the intermediate layer has a pore size of 0.1-20 microns, 0.3-15 microns, or more preferably 0.6-10 microns (based on the maximum distance within the respective pore space).
  • the deformability is further defined by the ratio of pore volume to total volume of the intermediate layers. This is preferably at least 10%, at least 20%, at least 30%, at least 40%, at least 50% or at least 60%.
  • the porosity of the intermediate layers is achieved by forming it as a sintered metal layer or as a metal layer in which pores are generally provided.
  • the pores can be created by means of spacer particles which are removed from the intermediate layer, are readily compressible or are converted into a form in which the material located in the pore is easy to compress.
  • a filler of organic material can be used, which at least partially converts to gas when heated.
  • the pores may also be provided by a liquid medium in which the material of the intermediate layer is present as a suspension. The pore-loosened material of the intermediate layer then results in at least partial removal or decomposition of the filler, which leaves pores.
  • This pore-containing intermediate layer represents the starting point of the process according to the invention and forms the intermediate layer of the arrangement according to the invention in porous form.
  • the porous intermediate layer can furthermore be produced by means of a paste-like system, which firstly comprises the remaining material of the intermediate layer, ie a metal, and also filler material which gives the interlayer material a pasty form and serves as a placeholder for pores.
  • the filler material may be provided as a solvent.
  • the intermediate layer or intermediate layers are preferably produced from a solid phase, the material of the intermediate layer being present as a solid (for example as particles) and pore-forming material, ie filler, being mixed with the material of the intermediate layer, the filler for providing the porous intermediate layer is removed or reacted.
  • the metal layers may be made of copper, a copper alloy, aluminum, or an aluminum alloy, for example.
  • the metal layers are preferably thicker than the intermediate layers.
  • the metal layers may have a thickness of at least 0.1 mm, at least 0.2 mm, at least 0.5 mm, at least 1 mm, at least 2 mm or at least at least 3 mm. This ensures that the metal layers represent a substantial static support for the device and for the intermediate layers, even with strong external forces.
  • the metal layers are formed of a material having a high coefficient of thermal conductivity.
  • section holders may be used or an insulating layer which separates the two intermediate layers from each other, or a combination thereof.
  • an insulating layer extends outside of the component, for example in that the insulating layer comprises a recess in which the component is fitted precisely or the component is provided plus a frame in which also no material of the insulating layer extends. If an additional frame is provided between the electronic component and the inner edge of the insulating layer, then this serves to equalize tolerances and different coefficients of linear expansion.
  • the insulating layer may be formed as thick as the device or may be formed with a thickness that is smaller than the thickness of the electronic device.
  • the invention is further realized by a method for producing a device structure comprising the steps of (a) disposing an electrical or electronic device between an upper porous intermediate layer and a lower porous intermediate layer, wherein the device and the intermediate layer may be formed as described above. Furthermore, the method comprises a step (b) of arranging the upper and the lower intermediate layer between an upper metal layer and a lower metal layer, wherein the intermediate layer and the metal layer may be formed as described above. The method further comprises a step (c) of joining the metal layers, the intermediate layers, and the intermediate device by applying pressure to outside of the metal layers facing away from the device. The contacting interface between the metal layer and the intermediate layer is thus on the opposite side of the metal layer, to which pressure is applied to the not yet unified component structure by attaching, for example, a stamp or another joining tool in order to completely form the latter by joining.
  • the step (c) of joining the metal layers further preferably comprises electrically connecting an upper contact surface provided on an upper side of the component with the upper intermediate layer and, simultaneously, electrically connecting a lower contact surface provided on a lower side of the component with the lower intermediate layer.
  • the electrical connection is provided by direct physical con Clock between the intermediate layer and contact surface, ie by forming a positive connection directly between the respective contact surface and the associated intermediate layer.
  • the contact surfaces may be formed as described above.
  • both contact surfaces are the same size, so that when joining with a certain force both contact surfaces are subjected to the same pressure.
  • the contact surfaces and the intermediate layer are flat (or the side which faces the respective contact surface), so that an applied force leads to a pressure distribution which is homogeneous with respect to the component and its contact surfaces.
  • the step (c) further comprises electrically connecting the upper intermediate layer to the upper metal layer and the lower intermediate layer to the lower metal layer by direct positive connection or via a positive connection provided by a surface coating of the respective metal layer.
  • the electrical connection between lower intermediate layer and lower metal layer by direct positive connection or via a positive connection provided by a surface coating of the lower metal layer is preferably carried out simultaneously with the electrical connection of the upper intermediate layer to the upper metal layer.
  • the bonding of the intermediate layers to the metal layers is also preferably carried out simultaneously with the electrical connection of the upper and lower contact surfaces to the upper and lower intermediate layers.
  • the joining comprises: embossing or pressing by means of a mating surface and a punch, which is guided to this.
  • the (not yet finished) component structure between counter surface and stamp is arranged.
  • two punches can be guided towards one another, with the (not yet finished) component structure being arranged therebetween.
  • Stamp, the counter surface or the stamp can be provided with a flat surface to impose a homogeneous pressure distribution during joining the upper and lower metal layer.
  • joining may include rolling with A counter-surface and a roller, wherein between the counter surface and roller, the component structure is guided.
  • the roller preferably has a constant circular cross-section along its longitudinal axis, the roller being guided and rotated in accordance with an axis of rotation extending along its center.
  • rollers are preferably formed e- benso as a circular cylinder, wherein the longitudinal axis of the circular cylinder corresponds to the axis of rotation of the rollers.
  • the pressure being relatively low, and the pressure during the entire joining step not greater than 15 MPa, not greater than 10 MPa, not greater than 6 MPa, is not greater than 3 MPa, not greater than 1 MPa or not greater than 0.5 MPa.
  • the pressure on the outsides of the metal layers is applied either homogeneously over the entire surface of the metal layer or, for example during rolling, homogeneously along a line.
  • the pressure is exerted by applying pressure or force to surface portions, to a substantially line-shaped cutout, or to the total area of the outsides of the metal layers, each being symmetrical about the midplane of the device structure.
  • the pressure is preferably applied perpendicular to the component structure, wherein the surface portions, where the pressure is exerted on the metal layers, facing each other.
  • the device structure according to the invention is preferably used for power electronics components which consist of silicon or silicon carbide circuits.
  • the device structure is suitable for use in automotive engineering, for example, for power components for control, regulation or rectification in motor vehicle, power generators or power elements that control a Stromfiuss to electric motor drives (or starters).
  • the invention is suitable for the representation of press-fit diodes on the generator shield of motor vehicle generators.
  • the device structure is in principle suitable for complete circuits, for example substrate-bonded circuits, which have contact surfaces, the device structure is preferably used for devices which have 2 pn junctions, 3 pn junctions or 5 pn junctions, or in particular for semiconductor power diodes or Semiconductor power MOSFETs or power transistors.
  • FIG. 1 shows a preferred embodiment of the inventive device structure in cross section.
  • FIG. 1 shows a cross-section of a component structure according to the invention.
  • the representation is not to scale, in particular the intermediate layer and the surface coating is shown enlarged.
  • 1 comprises an electronic component 10 with an upper contact surface 12 and a lower contact surface 14.
  • the upper contact surface is provided on an upper side of the component 10, and the lower contact surface is provided on the opposite underside of the component.
  • the contact surfaces or the upper sides and the lower sides extend perpendicular to the plane of the drawing.
  • the contact surfaces 12 and 14 of the device 10 are substantially not curved and extend within the same plane in which extend the top and bottom of the device.
  • the upper contact surface 12 directly adjoins an upper intermediate layer 20, and the lower contact surface 14 directly adjoins a lower intermediate layer 22. Both intermediate layers 20, 22 are porous.
  • the intermediate layers 20 and 22 are deformed, in particular the component 10, is substantially not deformed and in particular to a much lesser extent as the deformation of the intermediate layer.
  • the pressure during the joining is absorbed by the plastic / elastic properties of the intermediate layer, whereas the electrical component, which is essentially formed by a silicon crystal structure, and thus has a high brittleness, is not deformed.
  • the upper intermediate layer 20 has an underside which directly adjoins the upper contact surface 12 and is mechanically and electrically connected thereto by joining, the lower intermediate layer 22 having an upper side which likewise has a joining connection with the lower metal layer 14 is connected.
  • the component structure according to the invention of FIG. 1 furthermore comprises a surface coating 30, which adjoins the upper intermediate layer 20, and a surface covering 30. layer 32 which adjoins the lower intermediate layer 22.
  • the surface coating adjacent to the upper intermediate layer 20 is a surface coating of an upper metal layer 40
  • the surface coating 32 adjacent to the lower intermediate layer 22 is a surface coating of a lower metal layer 42.
  • the metal layers 40 and 42 will be described in more detail below.
  • the surface coating 30 and 32 of the metal layers 40 and 42 is, for example, a nickel coating or a low phosphorus content NiP coating (eg, less than 20 or less than 10%).
  • the surface coatings 30 and 32 can be applied by conventional chemical or physical surface coating mechanisms, for example by electroplating, vapor deposition, sputtering, contacting with liquid coating material, CVD or ALD. In multilayer surface coatings, various mechanisms can be combined, preferably sequentially.
  • the surface coating 30 of the upper metal layer 40 is connected directly to the upper side of the upper intermediate layer 20 via a joining connection, and the surface coating 32 of the lower metal layer 42 is connected directly to the underside of the lower intermediate layer 22 via a further joining contact.
  • the underside of the surface coating 30 of the upper metal layer 40 thus extends in the same plane as the top of the intermediate layer 20, and the upper surface of the surface coating 32 of the lower metal layer 42 extends in the same plane as the underside of the intermediate layer 22.
  • the surface coating of the upper metal layer directly adjoins it, and the surface coating 32 of the lower metal layer 42 directly adjoins it.
  • the connection between the surface coating and the respective metal layer is generated during the creation of the respective surface coating.
  • the upper metal layer 40 and the lower metal layer 42 are, for example, copper sheets or else aluminum sheets or aluminum or copper alloys. The sheets serve on the one hand for electrical contacting via the surface coating and the intermediate layer with the respective contact surface of the component 10 and serve on the other for mechanical connection and for mechanical protection (ie pressure absorption) of the component 10.
  • Another object of the metal layers is the heat dissipation.
  • the metal layers 40, 42 are significantly thicker than the surface coating 30, 32 and significantly thicker than the intermediate layers 20, 22 formed, preferably with a thickness that ensures that mechanical stress from the outside, for example by joining or during operation, in particular by temperature fluctuations in that a force acting on the component structure is absorbed by the latter in order to relieve the component 10.
  • the component structure shown in Figure 1 is produced by joining, wherein a homogeneous force 50, 52 is exerted on outer sides of the upper and lower metal layers 40, 42, so that the metal layers are exposed to a uniform over its surface pressure.
  • the force 50, 52 is generated by two tools, ie by two joining partners, which directly adjoin the outer sides of the metal layer (not shown), wherein the two tools are moved towards each other, whereby the force 50, 52 is generated for deformation of the intermediate layers 20, 22 is used.
  • joints between the metal layers 40, 42 (over the surface coatings 30, 32) with the (outer sides of) the intermediate layers 20, 22 and between the (inner sides of) the intermediate layers 20, 22 and the contact surfaces 12 result from the force , 14.
  • the component 10 as well as the intermediate layers are offset laterally inwards, wherein the metal layers extend laterally beyond the side edge of the component.
  • protection against laterally acting loads is provided, wherein at the same time the joining process with a relatively high tolerance with respect to the arrangement can be exerted by the overhang of the metal layers 40, 42 relative to the component 10.
  • the proportion of the pressure exerted on the component structure, which acts on the protruding edge, is at least partly or preferably completely united via the metal layers with pressurization of other surface portions of the metal layers.
  • tools are used which cause a plane-parallel movement of the metal layers to each other, thereby ensuring that the lower loaded protruding edge of the metal layers is not deformed more than the remaining portions of the metal layers, thereby ensuring that the protruding edges of the metal layers not in the free space.
  • Another embodiment, not shown, has intermediate layers which terminate with the outer edges of the metal layers. Furthermore, in the embodiment not shown, the outer edges of the component are aligned with the outer edges of the metal layers.
  • the metal layer is completely or partially provided with a surface coating.
  • the surface coating covers at least the area where it adjoins the intermediate layer.
  • orientation specifications "upper” and “lower” are not intended to determine the orientation of the respective component in the gravitational field of the earth, but serve for orientation in the consideration of Figure 1.
  • Additions are not an absolute orientation, but are based solely on the component structure itself.

Abstract

L'invention concerne une structure de composant qui comprend un composant électrique ou électronique (10) ayant une surface de contact supérieure (12) sur sa face supérieure et une surface de contact inférieure (14) sur sa face inférieure opposée, une couche métallique supérieure (40) et une couche métallique inférieure (42), ainsi qu'une couche intermédiaire poreuse supérieure (20) et une couche intermédiaire poreuse inférieure (22). La couche intermédiaire supérieure relie la couche métallique supérieure à la surface de contact supérieure de manière mécanique et électroconductrice et la couche intermédiaire inférieure relie la couche métallique inférieure à la surface de contact inférieure de manière mécanique et électroconductrice.
PCT/EP2009/066336 2008-12-23 2009-12-03 Structure de composant exempte de métal d'apport et résistant aux hautes températures et procédé de mise en contact électrique WO2010072534A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP09799060A EP2382654A1 (fr) 2008-12-23 2009-12-03 Structure de composant exempte de métal d'apport et résistant aux hautes températures et procédé de mise en contact électrique

Applications Claiming Priority (2)

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DE102008055138.4 2008-12-23
DE102008055138A DE102008055138A1 (de) 2008-12-23 2008-12-23 Hochtemperaturbeständige lötmittelfreie Bauelementstruktur und Verfahren zum elektrischen Kontaktieren

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WO2010072534A1 true WO2010072534A1 (fr) 2010-07-01

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WO2013045367A3 (fr) * 2011-09-30 2013-05-30 Robert Bosch Gmbh Module électronique comportant un matériau de base de substrat stable à des températures élevées
WO2013045345A3 (fr) * 2011-09-30 2013-05-30 Robert Bosch Gmbh Composite stratifié conçu pour connecter des composants électroniques, comprenant une couche de compensation, des couches de connexion et des couches de liaison

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DE102012202281A1 (de) * 2012-02-15 2013-08-22 Infineon Technologies Ag Halbleiteranordnung für Druckkontaktierung
DE102014115319A1 (de) * 2014-10-21 2016-04-21 Osram Opto Semiconductors Gmbh Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung
EP4322204A1 (fr) * 2022-08-11 2024-02-14 Siemens Aktiengesellschaft Module électronique de puissance fritté

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WO2013045367A3 (fr) * 2011-09-30 2013-05-30 Robert Bosch Gmbh Module électronique comportant un matériau de base de substrat stable à des températures élevées
WO2013045345A3 (fr) * 2011-09-30 2013-05-30 Robert Bosch Gmbh Composite stratifié conçu pour connecter des composants électroniques, comprenant une couche de compensation, des couches de connexion et des couches de liaison

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DE102008055138A1 (de) 2010-07-01

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