WO2010067963A3 - 마이크로 렌즈 어레이를 포함하는 이미지 센서 및 그 제조방법 - Google Patents

마이크로 렌즈 어레이를 포함하는 이미지 센서 및 그 제조방법 Download PDF

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Publication number
WO2010067963A3
WO2010067963A3 PCT/KR2009/006442 KR2009006442W WO2010067963A3 WO 2010067963 A3 WO2010067963 A3 WO 2010067963A3 KR 2009006442 W KR2009006442 W KR 2009006442W WO 2010067963 A3 WO2010067963 A3 WO 2010067963A3
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WIPO (PCT)
Prior art keywords
image sensor
manufacturing
region
substrate
microlens
Prior art date
Application number
PCT/KR2009/006442
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English (en)
French (fr)
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WO2010067963A2 (ko
Inventor
장기수
김건희
양순철
김효식
Original Assignee
한국기초과학지원연구원
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Publication date
Application filed by 한국기초과학지원연구원 filed Critical 한국기초과학지원연구원
Priority to US13/133,940 priority Critical patent/US20110284981A1/en
Publication of WO2010067963A2 publication Critical patent/WO2010067963A2/ko
Publication of WO2010067963A3 publication Critical patent/WO2010067963A3/ko
Priority to US14/056,915 priority patent/US9093576B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00365—Production of microlenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
    • B29D11/00807—Producing lenses combined with electronics, e.g. chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

본 발명은 마이크로 렌즈 어레이를 포함하는 이미지 센서 및 그 제조방법에 관한 것으로, 기판에서 멀어질수록 화합물 반도체의 알루미늄 조성비를 점진적으로 증가시켜 마이크로 렌즈 형성층을 성장한 후, 상기 기판에 인접한 영역은 산화 속도를 느리게 하고, 상기 기판에서 멀어질수록 산화속도가 빠르게 하여 산화 후 산화된 영역과 산화되지 않은 영역의 계면이 렌즈형태가 되도록 하여 이렇게 형성된 렌즈를 이미지센서에 집적함으로서, 마이크로렌즈가 집적된 이미지 센서의 제조단가를 낮추고 이미지 센서의 신호대 잡음비와 해상도를 증가시킴과 동시에 감도를 향상시킬 수 있는 효과가 있다.
PCT/KR2009/006442 2008-12-11 2009-11-04 마이크로 렌즈 어레이를 포함하는 이미지 센서 및 그 제조방법 WO2010067963A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/133,940 US20110284981A1 (en) 2008-12-11 2009-11-04 Image sensor comprising microlens array, and manufacturing method thereof
US14/056,915 US9093576B2 (en) 2008-12-11 2013-10-17 Image sensor comprising a digital-alloy microlens array integrated with sensor array, and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080126145A KR100996669B1 (ko) 2008-12-11 2008-12-11 마이크로 렌즈 어레이를 포함하는 이미지 센서 및 그 제조방법
KR10-2008-0126145 2008-12-11

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US13/133,940 A-371-Of-International US20110284981A1 (en) 2008-12-11 2009-11-04 Image sensor comprising microlens array, and manufacturing method thereof
US14/056,915 Division US9093576B2 (en) 2008-12-11 2013-10-17 Image sensor comprising a digital-alloy microlens array integrated with sensor array, and manufacturing method thereof

Publications (2)

Publication Number Publication Date
WO2010067963A2 WO2010067963A2 (ko) 2010-06-17
WO2010067963A3 true WO2010067963A3 (ko) 2010-08-12

Family

ID=42243156

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/006442 WO2010067963A2 (ko) 2008-12-11 2009-11-04 마이크로 렌즈 어레이를 포함하는 이미지 센서 및 그 제조방법

Country Status (3)

Country Link
US (2) US20110284981A1 (ko)
KR (1) KR100996669B1 (ko)
WO (1) WO2010067963A2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103139470A (zh) * 2011-11-30 2013-06-05 索尼公司 数字成像系统
US9063313B1 (en) * 2012-07-06 2015-06-23 Compass Electro Optical System Ltd. Fiber coupling using collimated beams
CN103928484A (zh) * 2014-04-22 2014-07-16 北京思比科微电子技术股份有限公司 提高红色和蓝色像素灵敏度的图像传感器微透镜结构
CN103928483A (zh) * 2014-04-22 2014-07-16 北京思比科微电子技术股份有限公司 提高红色和蓝色像素灵敏度的图像传感器像素结构
US10347722B2 (en) * 2015-03-04 2019-07-09 Lehigh University Artificially engineered III-nitride digital alloy
KR20210081767A (ko) 2019-12-24 2021-07-02 삼성전자주식회사 이미지 장치 및 이미지 센싱 방법
WO2021148119A1 (en) * 2020-01-23 2021-07-29 Huawei Technologies Co., Ltd. Spectral imaging apparatus and method for simultaneous capture of multiple spectral images
FR3109439B1 (fr) * 2020-04-21 2022-04-08 Office National Detudes Rech Aerospatiales Detecteur bidimensionnel de rayonnement terahertz
US11626442B2 (en) 2020-08-10 2023-04-11 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming image sensors

Citations (2)

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JPH10239157A (ja) * 1996-11-29 1998-09-11 He Holdings Inc Dba Hughes Electron 集積された赤外線マイクロレンズおよび真空パッケージのガス分子ゲッタ格子
JP2002214404A (ja) * 2001-01-17 2002-07-31 Canon Inc Ａｌを含む半導体材料からなるレンズ、それを用いた面型光素子、及びその製造方法

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WO1999052647A1 (en) * 1998-04-16 1999-10-21 The University Of New Mexico Non-planar micro-optical structures
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US7317579B2 (en) 2005-08-11 2008-01-08 Micron Technology, Inc. Method and apparatus providing graded-index microlenses
US7294896B2 (en) * 2005-09-27 2007-11-13 Teledyne Licensing, Llc Photodetector with charge-carrier reflector
KR20070055764A (ko) * 2005-11-28 2007-05-31 광주과학기술원 화합물 반도체의 선택적 식각을 이용한 마이크로렌즈 및마이크로 렌즈가 집적된 광전소자 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10239157A (ja) * 1996-11-29 1998-09-11 He Holdings Inc Dba Hughes Electron 集積された赤外線マイクロレンズおよび真空パッケージのガス分子ゲッタ格子
JP2002214404A (ja) * 2001-01-17 2002-07-31 Canon Inc Ａｌを含む半導体材料からなるレンズ、それを用いた面型光素子、及びその製造方法

Also Published As

Publication number Publication date
KR20100067543A (ko) 2010-06-21
US9093576B2 (en) 2015-07-28
US20110284981A1 (en) 2011-11-24
KR100996669B1 (ko) 2010-11-25
US20140042579A1 (en) 2014-02-13
WO2010067963A2 (ko) 2010-06-17

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