WO2010063590A1 - Dispositif semi-conducteur et procédé de production d'un dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur et procédé de production d'un dispositif semi-conducteur Download PDF

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Publication number
WO2010063590A1
WO2010063590A1 PCT/EP2009/065510 EP2009065510W WO2010063590A1 WO 2010063590 A1 WO2010063590 A1 WO 2010063590A1 EP 2009065510 W EP2009065510 W EP 2009065510W WO 2010063590 A1 WO2010063590 A1 WO 2010063590A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
semiconductor device
semiconductor
back electrode
depositing
Prior art date
Application number
PCT/EP2009/065510
Other languages
English (en)
Inventor
Tobias Repmann
Axel Straub
Original Assignee
Applied Materials Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/329,313 external-priority patent/US20100139753A1/en
Priority claimed from EP08170861A external-priority patent/EP2194583A1/fr
Application filed by Applied Materials Inc. filed Critical Applied Materials Inc.
Publication of WO2010063590A1 publication Critical patent/WO2010063590A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to a semiconductor device, particularly a solar cell module, comprising: at least a semiconductor layer for converting light into electric power; at least a back electrode layer deposited on the semiconductor layer; and a reflective layer deposited on the electrode layer. Furthermore, the invention relates to a method of producing a semiconductor device, particularly a semiconductor device as mentioned above, comprising the steps of: a) depositing a semiconductor layer for converting light into electric power on a substrate; b) depositing a back electrode layer on the semiconductor layer; and c) depositing a reflective layer on the back electrode layer.
  • Solar cell modules convert light impinging on the solar cell into electric power.
  • Solar cell modules usually comprise at least a first electrode layer, a thin film semiconductor layer deposited on the first electrode layer, and a second electrode layer deposited on the thin film semiconductor layer.
  • the thin film semiconductor layer includes at least two thin conducting areas of different conductivity type and a junction between these areas. The junction may be a p-i-n junction between a p- doped area and an n-doped area.
  • the electrode layers are configured as positive and negative contacts.
  • the front electrode layer has to be transparent for light impinging on the solar cell module to enter the semiconductor layer.
  • the back electrode layer may be of any suitable material provided that the material has sufficient conductivity for conducting the electric current generated in the semiconductor layer.
  • the back electrode layer may be configured as a transparent TCO (transparent conductive oxide) layer.
  • the TCO layer has to have a thickness sufficient to provide an adequate conductivity of the back electrode.
  • a reflective layer is deposited on the back side of the TCO layer in order to reflect light transmitted through the semiconductor layer and the TCO layer back through the TCO layer into the semiconductor layer.
  • electrically conductive and reflective materials may be used for forming the back electrode layer. It is most common to use metal as back electrode material because metals have good conductivity and reflect the light transmitted through the semiconductor layer back into the semiconductor layer.
  • a semiconductor device particularly a solar cell module, e.g. a thin film photovoltaic module, comprises: at least a semiconductor layer for converting light into electric power; at least a back electrode layer deposited on the semiconductor layer; and a reflective layer deposited on the electrode layer.
  • the electrode layer is formed as a thin metal layer which is at least partly transparent for light transmitted through the semiconductor layer.
  • the metal layer has a small thickness which allows at least some of the light transmitted through the semiconductor layer to be transmitted through the metal layer as well.
  • the transmitted light is then reflected by the reflective layer deposited on the other side of the electrode layer.
  • a partial transmission of light through the metal layer may mean that, for example, the transmissibility T is at least 50%, preferably at least 25%, or even more preferably at least 10%. It may also be that the transmissibility T for light is at least as large as the reflectivity R and the absorbability A of the layer.
  • conventional back contacts may comprise metal layers which are thicker than at least 100 nm in order to provide enough reflectivity of the metal layer.
  • the back electrode metal layer is quite thin thus reducing the production effort and costs for the back electrode.
  • the conductivity of the thin metal layer is sufficient for conducting currents generated e.g. in Si thin layer solar cells due to a high specific conductivity of metals.
  • the thickness of the layer may be less than 10 % of the thickness of conventional layers. The light transmitted through the electrode layer is reflected by the additional reflective layer which is an important feature of the invention.
  • serial connection of solar modules according to the invention may be provided having a better reliability due to a better adhesion of contacts and more reliable laser scribing.
  • the thickness of the back electrode layer is less than 100 nm, particularly less than 50 nm, more particularly less than 10 nm.
  • the thin metal layer comprises at least Al, Ag, or other metals.
  • the semiconductor device comprises at least a first TCO (Transparent Conductive Oxide) layer arranged between the semiconductor layer and the back electrode layer.
  • the first TCO layer may have a small thickness, e.g. 10 nm.
  • the thin metal layer provides the required conductivity to the back electrode which may now be considered as a combination of the first TCO layer and the thin metal layer.
  • the semiconductor device may comprise a second TCO layer arranged between the back electrode layer and the reflective layer.
  • the second TCO layer generates a protective layer for the sensitive metal layer. It may have a small thickness of e.g. 10 nm.
  • the electrode may be considered to be a combination of a metal layer and the second TCO layer and/or the first TCO layer.
  • the metal layer may be sandwiched between the semiconductor layer and the second TCO layer, or between the first TCO layer and the second TCO layer.
  • the semiconductor device comprises a transparent front electrode layer arranged on the semiconductor layer on a side opposite the back electrode layer.
  • the front electrode layer may be a TCO layer.
  • the reflective layer is configured as a Lambertian back reflective layer.
  • the luminance of Lambertian reflectors is substantially isotropic.
  • a Lambertian reflector is a layer which comprises white pigments and/or is white coloured.
  • the back reflective layer comprises white pigments and /or white colour and/or titanium dioxide embedded in a carrier material.
  • the method according to the invention of producing a semiconductor device comprises the steps of: a) depositing a semiconductor layer for converting light into electric power on top of a substrate; b) depositing a back electrode layer on the semiconductor layer; and c) depositing a reflective layer on the back electrode layer, wherein the electrode layer is formed as a thin film metal layer having a thickness which is at least partly transparent for light transmitted through the semiconductor layer.
  • depositing the back electrode layer in step b) includes depositing a metal layer having a thickness less than 100 nm, particularly less than 50 nm, more particularly less than 10 nm, on top of the semiconductor layer.
  • step of depositing the back electrode layer on top of the semiconductor layer in step b) comprises depositing at least a layer comprising Al and/or Ag.
  • the method comprises an additional step al) of depositing a first TCO layer on top of the semiconductor layer before carrying out step b).
  • the method comprises a further step bl) of depositing a second TCO layer on top of the back electrode layer before carrying out step c).
  • step c) includes depositing the reflective layer as a Lambertian back reflective layer.
  • Figure 1 a first embodiment of the invention
  • Figure 2 a second embodiment of the invention.
  • Figure 3 a third embodiment of the invention.
  • Figure 1 illustrates a first embodiment of a solar cell module 1 according to the present invention.
  • the solar cell module 1 comprises a transparent substrate 2, e.g. a glass substrate. On top of the glass substrate 2 a layer system 3 is deposited.
  • the layer system 3 comprises a front electrode 4 of the solar cell module 1.
  • the front electrode 4 may be a transparent conductive oxide (TCO) layer and has a first thickness di of a few 100 nm. The thickness di is sufficient for providing the required conductivity for conducting electric current produced by the solar cell module 1.
  • TCO transparent conductive oxide
  • the layer system 3 comprises a thin film semiconductor layer 5 deposited on the front electrode layer 4.
  • the thin film semiconductor layer 5 comprises areas of different conductivity type and a junction between these areas in order to convert light into electric power.
  • a back electrode is formed on the thin film semiconductor layer 5 which includes a very thin metal layer 6 having a thickness d smaller than 50 nm.
  • the metal layer has a thickness d sufficient for providing conductivity for transmitting electric current produced by the solar cell module 1.
  • the thickness d is so small that most of the light transmitted through the semiconductor layer 5 transmits through the thin metal layer 6.
  • the reflective layer 7 is a white Lambertian reflective layer deposited on the back side of the solar cell module 1.
  • an encapsulation layer or element (not illustrated), e.g. a second glass substrate, may be arranged on the back side of the white Lambertian layer
  • Figure 2 shows a second embodiment of the present invention.
  • the layer system 3 according to the second embodiment comprises an additional first TCO layer 8 which is arranged between the semiconductor layer 5 and the thin metal layer 6.
  • the TCO layer 8 has a thickness d 2 of about 10 nm.
  • the first TCO layer 8 and the thin metal layer 6 form the back electrode of the solar cell module 1.
  • Figure 3 illustrates a third embodiment of the invention.
  • the layer system 3 comprises a first TCO layer 8 arranged between the semiconductor layer 5 and the thin metal layer 6 and a second TCO layer 9 arranged on the back side of the thin metal layer 6 between the thin metal layer 6 and the reflective layer 7.
  • the second TCO layer 9 has a thickness d 3 of about 10 nm. It forms a protective layer for protecting the thin metal layer 6 from environmental influences.
  • the first TCO layer 8, the second TCO layer 9 and the thin metal layer 6 sandwiched between the first TCO layer 8 and the second TCO layer 9 form the back electrode of the solar cell module 1.
  • the embodiments illustrated in figures 1 to 3 are just exemplary. For instance, additional layers may be included.
  • the first TCO layer may be abandoned leaving a layer system 3 consisting of the first electrode layer 4, the semiconductor layer 5, the thin metal layer 6, the second TCO layer 9 and the reflective layer 7.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un module de cellule solaire 1 comprenant un substrat transparent 2, par ex. un substrat de verre. Sur le dessus du substrat de verre 2 un système de couches 3 est déposé. Le système de couches 3 comprend une électrode avant 4 qui peut être une couche d’oxyde conducteur transparent (TCO). De plus, le système de couches 3 comprend une couche de semi-conducteur à couche mince 5 déposée sur la couche d’électrode avant 4. Une électrode arrière est formée sur la couche semi-conductrice à couche mince 5 qui comprend une couche métallique très mince 6 dont l’épaisseur d est inférieure à 50 nm. Une couche réfléchissante de Lambert 7 est déposée sur la couche métallique mince 6 afin de réfléchir la lumière transmise à travers la couche métallique 6.
PCT/EP2009/065510 2008-12-05 2009-11-19 Dispositif semi-conducteur et procédé de production d'un dispositif semi-conducteur WO2010063590A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP08170861.2 2008-12-05
US12/329,313 US20100139753A1 (en) 2008-12-05 2008-12-05 Semiconductor device and method of producing a semiconductor device
EP08170861A EP2194583A1 (fr) 2008-12-05 2008-12-05 Dispositif de semi-conducteur et procédé de production d'un dispositif à semi-conducteur
US12/329,313 2008-12-05

Publications (1)

Publication Number Publication Date
WO2010063590A1 true WO2010063590A1 (fr) 2010-06-10

Family

ID=42133751

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/065510 WO2010063590A1 (fr) 2008-12-05 2009-11-19 Dispositif semi-conducteur et procédé de production d'un dispositif semi-conducteur

Country Status (2)

Country Link
TW (1) TW201029207A (fr)
WO (1) WO2010063590A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975679A (ja) * 1982-10-25 1984-04-28 Toshiba Corp 光起電力装置
JPS61218178A (ja) * 1985-03-25 1986-09-27 Komatsu Ltd アモルフアスシリコン太陽電池
US4675469A (en) * 1983-08-05 1987-06-23 Taiyo Yuden Kabushiki Kaisha Amorphous silicon solar battery
EP0450468A1 (fr) * 1990-03-30 1991-10-09 Showa Shell Sekiyu Kabushiki Kaisha Dispositif photovoltaique et sa méthode de fabrication
EP0734075A1 (fr) * 1994-10-06 1996-09-25 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Pile solaire a couches minces
US6500690B1 (en) * 1999-10-27 2002-12-31 Kaneka Corporation Method of producing a thin-film photovoltaic device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975679A (ja) * 1982-10-25 1984-04-28 Toshiba Corp 光起電力装置
US4675469A (en) * 1983-08-05 1987-06-23 Taiyo Yuden Kabushiki Kaisha Amorphous silicon solar battery
JPS61218178A (ja) * 1985-03-25 1986-09-27 Komatsu Ltd アモルフアスシリコン太陽電池
EP0450468A1 (fr) * 1990-03-30 1991-10-09 Showa Shell Sekiyu Kabushiki Kaisha Dispositif photovoltaique et sa méthode de fabrication
EP0734075A1 (fr) * 1994-10-06 1996-09-25 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Pile solaire a couches minces
US6500690B1 (en) * 1999-10-27 2002-12-31 Kaneka Corporation Method of producing a thin-film photovoltaic device

Also Published As

Publication number Publication date
TW201029207A (en) 2010-08-01

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