WO2010062119A3 - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element Download PDF

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Publication number
WO2010062119A3
WO2010062119A3 PCT/KR2009/007001 KR2009007001W WO2010062119A3 WO 2010062119 A3 WO2010062119 A3 WO 2010062119A3 KR 2009007001 W KR2009007001 W KR 2009007001W WO 2010062119 A3 WO2010062119 A3 WO 2010062119A3
Authority
WO
WIPO (PCT)
Prior art keywords
quantum well
light emitting
emitting element
semiconductor light
band gap
Prior art date
Application number
PCT/KR2009/007001
Other languages
French (fr)
Korean (ko)
Other versions
WO2010062119A2 (en
Inventor
안도열
박승환
김종욱
구분회
Original Assignee
우리엘에스티 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 우리엘에스티 주식회사 filed Critical 우리엘에스티 주식회사
Publication of WO2010062119A2 publication Critical patent/WO2010062119A2/en
Publication of WO2010062119A3 publication Critical patent/WO2010062119A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The present disclosure relates to a semiconductor light emitting element that includes an active layer generating light through the recombination of electrons and holes. The active layer comprises: a quantum well made of a first compound semiconductor, and a barrier layer made of a second compound semiconductor. The quantum well includes: a first sub-quantum well having a first band gap; and a second sub-quantum well having a second band gap different from the first band gap.
PCT/KR2009/007001 2008-11-27 2009-11-26 Semiconductor light emitting element WO2010062119A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0119149 2008-11-27
KR1020080119149A KR101012636B1 (en) 2008-11-27 2008-11-27 Light generating device

Publications (2)

Publication Number Publication Date
WO2010062119A2 WO2010062119A2 (en) 2010-06-03
WO2010062119A3 true WO2010062119A3 (en) 2010-08-19

Family

ID=42226259

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/007001 WO2010062119A2 (en) 2008-11-27 2009-11-26 Semiconductor light emitting element

Country Status (2)

Country Link
KR (1) KR101012636B1 (en)
WO (1) WO2010062119A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101462238B1 (en) * 2012-10-05 2014-12-04 대구가톨릭대학교산학협력단 High-efficiency blue InGaN/GaN quantum-well light-emitting diodes with saw-like later

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129724A (en) * 1991-11-06 1993-05-25 Sony Corp Multiple quantum well type semiconductor laser
KR20070098031A (en) * 2006-03-30 2007-10-05 삼성전기주식회사 Nitride semiconductor device
KR20080033666A (en) * 2006-10-13 2008-04-17 엘지전자 주식회사 Nitride light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129724A (en) * 1991-11-06 1993-05-25 Sony Corp Multiple quantum well type semiconductor laser
KR20070098031A (en) * 2006-03-30 2007-10-05 삼성전기주식회사 Nitride semiconductor device
KR20080033666A (en) * 2006-10-13 2008-04-17 엘지전자 주식회사 Nitride light emitting device

Also Published As

Publication number Publication date
WO2010062119A2 (en) 2010-06-03
KR101012636B1 (en) 2011-02-09
KR20100060524A (en) 2010-06-07

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