WO2010059325A1 - Nanotubes de carbone courbés et leurs procédés de production - Google Patents

Nanotubes de carbone courbés et leurs procédés de production Download PDF

Info

Publication number
WO2010059325A1
WO2010059325A1 PCT/US2009/061165 US2009061165W WO2010059325A1 WO 2010059325 A1 WO2010059325 A1 WO 2010059325A1 US 2009061165 W US2009061165 W US 2009061165W WO 2010059325 A1 WO2010059325 A1 WO 2010059325A1
Authority
WO
WIPO (PCT)
Prior art keywords
carbon
nanotube
electric field
growth region
growth
Prior art date
Application number
PCT/US2009/061165
Other languages
English (en)
Inventor
Nina Markovic
Christopher A. Merchant
James R. Medford
Original Assignee
The Johns Hopkins University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Johns Hopkins University filed Critical The Johns Hopkins University
Priority to US13/119,875 priority Critical patent/US9056777B2/en
Publication of WO2010059325A1 publication Critical patent/WO2010059325A1/fr
Priority to US14/706,793 priority patent/US20150239739A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0881—Two or more materials
    • B01J2219/0886—Gas-solid
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/20—Nanotubes characterized by their properties
    • C01B2202/22—Electronic properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/13—Nanotubes

Definitions

  • the current invention relates to methods of producing carbon nanotubes, and more particularly to methods of producing carbon nanotubes that have one or more bends, to the carbon nanotubes and products incorporating the carbon nanotubes.
  • Single walled carbon nanotubes have demonstrated immense potential for the utilization of their unique mechanical, chemical, optical and electrical properties (Dekker, C, Phys Today, 22-28, (1999)).
  • the properties of long SWCNTs have been well documented and have resulted in numerous novel devices (Dresselhaus, M. S.; Dresselhaus, G.; Eklund, P. C. Science of Fullerenes and Carbon Nanotubes; Elsevier: San Diego, 1996).
  • Short SWCNTs ( ⁇ 100nm), however, have not been extensively studied, despite a wide variety of possible applications. At such short lengths, these ballistic one-dimensional conductors become subject to quantum confinement effects.
  • Ultrashort carbon nanotubes can be obtained by mechanical (Venema, L. C; Wildoer, J. W. G.; Janssen, J. W.; Tans, S. J.; Tuinstra, H. L. J. T.; Kouwenhoven, L. P.; Dekker, C.
  • a method of producing carbon nanotubes include directing a flow of a gas over a substrate to provide growth of at least one carbon nanotube in a carbon-nanotube-growth region of the substrate; applying an electric field to the carbon-nanotube-growth region of the substrate after the at least one carbon nanotube has begun to grow in the carbon-nanotube-growth region, the electric field being substantially in a first direction in the carbon-nanotube-growth region; and changing the electric field at a preselected time to be substantially in a second direction in the carbon-nanotube-growth region during growth of the at least one carbon nanotube.
  • the second direction is different from the first direction resulting in a bend substantially at a selected position of the at least one carbon nanotube, the method of producing carbon nanotubes providing the production of the at least one carbon nanotube having at least one bend substantially at a selected position along the at least one carbon nanotube.
  • Some embodiments of the current invention include carbon nanotubes produced according to methods according to the current invention.
  • a carbon nanotube according to an embodiment of the current invention has at least first and second bends with a substantially unbent length reserved there between.
  • the carbon nanotube exhibits quantized energy levels for electrons traveling between the first and second bends which provide potential barriers to provide a degree of confinement of the electrons between the first and second bends.
  • the transitions between the quantized energy levels are effected by absorption and emission of electromagnetic radiation.
  • a device for the production of carbon nanotubes includes a substrate; a first electrode formed on the substrate, the first electrode having a first end adapted to be connected to a voltage source and a second end free of an electrical connection and arranged proximate a carbon-nanotube-growth region; a second electrode formed on the substrate, the second electrode having a first end adapted to be connected to a voltage source and a second end free of an electrical connection and arranged proximate the carbon-nanotube-growth region; and a third electrode formed on the substrate, the third electrode having a first end adapted to be connected to a voltage source and a second end free of an electrical connection and arranged proximate the carbon-nanotube-growth region.
  • the first, second and third electrodes are suitable to provide an electric field having a first direction in the carbon-nanotube-growth region and to change the electric field to have a second direction in the carbon-nanotube-growth region.
  • a method of pruducing bent carbon nanotubes includes providing a carbon nanotube, arranging the carbon nanotube such that one end is fixed while an axially opposing end is free, applying a time varying electric field to cause the carbon nanotube to bend.
  • Figure 1 is a silicon wafer with patterned Au electrodes for the production of bent carbon nanotubes according to an embodiment of the current invention. The gaps between
  • islands in the center is 6 ⁇ m, as are the widths of the islands themselves.
  • the large triangles on the outer edges extend to a diameter of ⁇ 3.5 mm, allowing for easy attachment to macroscopic electrodes.
  • Figure 2 is an atomic force microscope (AFM) image of a SWCNT on a chip, from the bulk powder method according to an embodiment of the current invention. Note the multiple bends in the lower tube. Note also that each kink is characterized by a brighter region. This brighter region represents a greater height, and is indicative of a defect similar to that of a bent drinking straw. The field direction was changed seven times in this case.
  • Figures 3A-3D show results of the chip method according to an embodiment of the current invention.
  • Figure 3 A is an AFM image of bent SWCNTs on a Si wafer.
  • Figure 3B is an SEM image of a catalyst particle on a Si Wafer. The two patterned electrodes are visible above and below the catalyst particle.
  • Figure 3C is an SEM image of a catalyst particle on a Si Wafer. Note the curvature of tubes towards the upper right hand corner, in the direction of the applied electric field.
  • Figure 3D is an SEM image of a catalyst particle on a Si Wafer. Note the curvature of tubes towards the electrode at the top of the image, in the direction of the applied electric field. One tube in particular can be seen growing from the left side of the particle, approximately one inch above the bottom of the figure, to the electrode.
  • Figure 4 shows an example of CNT growth from the LPC embodiment of the current invention. Note the tube that curls back on itself in the middle right portion of the image. This is most likely caused by the random motion of the tubes prior to contact with the surface.
  • Figures 5A-5C show results of the electrophoresis method according to an embodiment of the current invention.
  • Figure 5 A is an AFM image of a SWCNT with two sharp bends.
  • Figure 5B is the same nanotube with higher magnification.
  • Figure 5C is at even higher magnification; one can see additional two bends, approximately 9nm apart (marked with a circle).
  • a method according to some embodiments of the current invention provides controlled growth of carbon nanotubes that can function similar to quantum nano-dots.
  • a method of producing carbon nanotubes according to some embodiments of the current invention produces carbon nanotubes that have selectable electronic and optical properties.
  • the term "bend” or "bent carbon nanotube” is intended to refer to a bend defect that affects the electrical and/or electromagnetic properties of the carbon nanotube.
  • This process can instantaneously affect thousands of tubes, generating an abundant source of SWCNT that can be used like quantum dots of predetermined sizes.
  • This method can also be used to produce custom-made quantum dot arrays, where the properties of each quantum dot can be tuned to obtain a very specific barcode-type optical signature ranging from visible frequencies to extremely high radio frequencies according to some embodiments of the current invention.
  • This can provide a large variety of applications (including, but not limited to, medical applications, thermal imaging and photochemistry), by extending the range of useful quantum dot frequencies and offering customized absorption and emission signatures.
  • the typical diameter of a SWCNT is about 1 nanometer, which naturally confines the electrons in two dimensions, leaving them free to move only along the long axis. SWCNTs are therefore model systems for one-dimensional electron transport (Dekker, C, Phys Today, 22-28, (1999)). When the electrons are also confined in the third dimension, as they are in the ultrashort SWCNTs, the system becomes the classic one-dimensional particle-in-a-box. The energy levels in such a system are quantized due to the wave nature of the electrons.
  • E Planck's constant
  • Vf the Fermi velocity
  • L the length of the nanotube
  • a method of producing carbon nanotubes includes directing a flow of a gas over a substrate to provide growth of at least one carbon nanotube in a carbon-nanotube-growth region of the substrate; applying an electric field to the carbon-nanotube-growth region of the substrate after the at least one carbon nanotube has begun to grow in the carbon-nanotube-growth region, the electric field being substantially in a first direction in the carbon-nanotube-growth region; and changing the electric field at a preselected time to be substantially in a second direction in the carbon-nanotube-growth region during growth of the at least one carbon nanotube.
  • the second direction is different from the first direction resulting in a bend substantially at a selected position of the at least one carbon nanotube to produce at least one carbon nanotube having at least one bend substantially at a selected position along the at least one carbon nanotube.
  • the flow of the gas over the substrate can be, for example, a chemical vapor deposition (CVD) process.
  • the gas can be methane or a gas mixture that includes methane.
  • a mixture of methane and hydrogen gas has been found to be suitable for some applications.
  • the invention is not limited to these particular examples.
  • the substrate and/or carbon-nanotube-growth region can be heated to a suitable temperature for the particular application.
  • the term "carbon- nanotube-growth region" is intended to include proximate the substrate, over the substrate, and/or overlapping with the substrate, depending on the particular example.
  • the term substrate is intended to have a broad meaning herein and can include structure and/or catalysts deposited and/or formed on a bare substrate.
  • the bare substrate can be a silicon substrate, a sapphire substrate, a quartz substrate, strontium titanate, for example. However, the invention is not limited to only these examples.
  • the bare substrate may include a dielectric layer, for example, but not limited to, a SiO 2 layer.
  • the substrate can also include a pattern of electrodes for producing electric fields according to some embodiments of the current invention.
  • catalysts in various forms can be included within the general definition of the term "substrate.”
  • the catalysts can be, but are not limited to, layers, powders, nanoparticles, and/or patterned regions, for example.
  • Catalysts can include, but are not limited to, Fe(NO 3 ) 3 -9H 2 O in Alumina nanoparticles, a thin film and/or patterned thin film of cobalt, nickel or iron, for example.
  • the method according to some embodiments can include applying a substantially uniform electric field in the carbon-nanotube-growth region in the first direction.
  • the method according to some embodiments can also include changing the electric field to another substantially uniform electric field in the carbon-nanotube-growth region in the second direction.
  • the method can include changing the magnitude of the electric field as a function of time. In some embodiments, the method can include changing the electric field as a periodic function of time. The amplitude and frequency of such a period function can be selected according to the particular application.
  • Methods of producing bent carbon nanotubes according to some embodiments of the current invention can produce a single bend, two bends or more than two bends per carbon nanotube.
  • the positions of the bend can be selected with precision on the scale of the carbon nanotube length. For example, bends can be positioned within about ⁇ 10 nm in some examples.
  • the general concepts of the current invention are not limited to this example of a degree of precision.
  • Methods according to some embodiments of the current invention can be used to produce a plurality of bent carbon nanotubes substantially at the same time in a parallel manner. In some embodiments, this can provide an efficient mass production method.
  • the scope of the invention also includes producing single and/or small numbers of bent carbon nanotubes, if desired.
  • Some embodiments of the current invention include one or more bent carbon nanotubes produced according the methods of the current invention.
  • An embodiment of the current invention includes a carbon nanotube having at least first and second bends with a substantially unbent length reserved there between.
  • the carbon nanotube exhibits quantized energy levels for electrons traveling between the first and second bends which provide potential barriers to provide a degree of confinement of the electrons between the first and second bends.
  • the transitions between the quantized energy levels are effected by absorption and emission of electromagnetic radiation.
  • the carbon nanotubes can provide narrow-band absorption and emission of electromagnetic radiation for a wavelength in the visible region of the electromagnetic spectrum, according to some embodiments of the current invention.
  • the carbon nanotubes can provide narrow-band absorption and emission of electromagnetic radiation for a wavelength in the infrared region of the electromagnetic spectrum, according to some embodiments of the current invention.
  • the carbon nanotubes can provide narrow-band absorption and emission of electromagnetic radiation for a wavelength in radio frequency region of the electromagnetic spectrum, according to some embodiments of the current invention.
  • bent carbon nanotubes can be produced from existing nanotubes by subjecting the existing nanotubes to applied electric fields.
  • the existing carbon nanotubes can be arranged such the one end is fixed, while the other end is free.
  • An electric field and/or changing electric field can be applied to cause the carbon nanotubes to bend.
  • a pulsed field can be applied one or more times to the carbon nanotubes.
  • the first was a relatively crude process of applying an electric-field to a dot of bulk catalyst powder during the growth process. This has the advantage of being relatively straightforward to set up, and the easiest to scale up to an industrial application.
  • the second process involved depositing the catalyst onto a chip with photolithographically fabricated electrodes. The advantages here are that the geometries were much easier to control and the voltage needed to create the necessary field is several orders of magnitude lower. In both cases, the electric-field strength was 1-2 V/ ⁇ m. The exact gas flows, electric potentials and methods of attaching electrodes varied from run to run. We also performed different ways of preparing the catalyst, as detailed below. In other embodiments, we used electrophoresis to bend already grown nanotubes.
  • the gap between the electrodes was roughly the same as the width of the boat, ⁇ lcm, which required a voltage of 10-20 kV in order to create the necessary field strength.
  • ⁇ lcm the width of the boat
  • the sample was first heated to 91O 0 C under an argon gas flow of ⁇ 1 Standard Liter Per Minute (SLPM) for 25 minutes to prevent oxidation and to ensure a stable temperature.
  • SLPM Standard Liter Per Minute
  • the electric fields were generally applied for bursts of 7-45 seconds to allow for growth in the field direction or for millisecond bursts that were meant to bend the tubes but not to last for significant growth times.
  • the CH 4 is turned off and replaced by ⁇ 1 SLPM argon flow for a 3 hour cool down.
  • the catalyst powder is placed into solution with 1 ,2-dichloroethane and dispersed onto a cleaned silicon wafer for examination by Atomic Force Microscope.
  • Powder catalyst on Si chip uses the same catalyst as the bulk powder method.
  • the chip itself was a 5mm by 5mm lightly doped Si wafer with a l ⁇ m thermally grown SiO 2 layer, patterned using standard photolithography ( Figure 1).
  • 150 nm of Au was thermally evaporated on top of a 6 nm sticking layer of Cr in a pattern that allowed for 4 electrodes and 3 catalyst islands each separated by a 6 ⁇ m gap.
  • the chips were then re-patterned using photolithography to allow the placement of catalyst particles.
  • the solution consisted of -lmg of the catalyst powder dissolved in ImL DI water and left to sit overnight.
  • this stock solution Prior to each use, this stock solution was sonicated for 1 hour. A droplet of this solution was dropped onto a 5mm by 5mm chip so that it covered the entire surface. The chip was then placed on a hot plate at a temperature of 115 0 C for 12 minutes to ensure drying. Lift off was then preformed on the chips, making sure that catalyst only remained on the islands in the center of the chip.
  • Co films were an attempt to place catalyst islands across the entire surface of the chip, thereby providing an abundant and regular source of carbon nanotubes according to an embodiment of the current invention.
  • Thin layers of Co film had previously been shown to produce SWCNTs (D. Bethune et al., Nature 363, 605-607 (1993)).
  • Arrays of 15nm thick Co islands with a diameter of 3 ⁇ m were lithographically patterned across entire chips.
  • Either 150nm thick Co leads or 150nm thick Cr leads were used in different runs. These leads were typically 30 ⁇ m apart, and the electric field was 0.5-1 V/ ⁇ m.
  • quartz wafers as well as Si wafers coated with TiO 2 or Al 2 O 3 . Liquid Precursor Catalyst and Stamping on Chips
  • LPC liquid precursor catalyst
  • the PDMS stamps were custom made to print an array of micron sized islands. In order to use the stamp, it first had to be rendered hydrophilic. This was accomplished by O 2 etching the stamp (300 mTorr 02, 5OW, 3-4 minutes) and then placing it under water. The submersion in water served to maintain the effects of the O 2 etch. After etching, the stamp was spin coated with the LPC (3-4krpms, 30 seconds). The stamp was then carefully applied to the prepared chip. Following that, the sample was placed into the tube furnace and baked at 466C for 4-8 hours in Ar or air, depending on the trial. This served to drive off some of the heavier organic components of the LPC. The SWCNTs were grown for 10-20 minutes.
  • Another solution would be to interfere with the binding of the SWCNT to the wafer's surface. That could be accomplished by either chemically functionalizing the SWCNT with a compound that did not adhere as rapidly to the surface, or by slowing the decent and binding of the SWCNT. This later technique might involve vibrating the sample during this procedure, thereby making a binding less likely while not interfering with the binding strength. We are currently investigating both approaches.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Le procédé selon l’invention de production de nanotubes de carbone consiste à diriger un flux d’un gaz au-dessus d’un substrat pour provoquer la croissance d’au moins un nanotube de carbone dans une zone de croissance de nanotubes de carbone du substrat; à appliquer un champ électrique à la zone de croissance de nanotubes de carbone du substrat après que le ou les nanotube(s) de carbone ai(en)t commencé(s) à croître dans la zone de croissance de nanotubes de carbone, le champ électrique étant sensiblement dans une première direction dans la zone de croissance de nanotubes de carbone; et à modifier le champ électrique à un temps présélectionné pour qu’il soit sensiblement dans une seconde direction dans la zone de croissance de nanotubes de carbone pendant la croissance du (des) nanotube(s) de carbone. La seconde direction est différente de la première direction, ce qui entraîne une courbure sensiblement en une position sélectionnée du (des) nanotube(s) de carbone, le procédé de production des nanotubes de carbone concernant la production d’au moins un nanotube de carbone comportant au moins une courbure sensiblement en une position sélectionnée le long du ou des nanotube(s) de carbone.
PCT/US2009/061165 2008-10-17 2009-10-19 Nanotubes de carbone courbés et leurs procédés de production WO2010059325A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/119,875 US9056777B2 (en) 2008-10-17 2009-10-19 Bent carbon nanotubes and methods of production
US14/706,793 US20150239739A1 (en) 2008-10-17 2015-05-07 Bent carbon nanotubes and methods of production

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10633308P 2008-10-17 2008-10-17
US61/106,333 2008-10-17

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US13/119,875 A-371-Of-International US9056777B2 (en) 2008-10-17 2009-10-19 Bent carbon nanotubes and methods of production
US14/706,793 Division US20150239739A1 (en) 2008-10-17 2015-05-07 Bent carbon nanotubes and methods of production

Publications (1)

Publication Number Publication Date
WO2010059325A1 true WO2010059325A1 (fr) 2010-05-27

Family

ID=42198444

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/061165 WO2010059325A1 (fr) 2008-10-17 2009-10-19 Nanotubes de carbone courbés et leurs procédés de production

Country Status (2)

Country Link
US (2) US9056777B2 (fr)
WO (1) WO2010059325A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3225588A1 (fr) * 2016-03-31 2017-10-04 The Boeing Company Tapis de nanotubes de carbone entrelacés
US10619246B2 (en) 2016-03-31 2020-04-14 The Boeing Company Interwoven Carbon Nanotube Mats

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113871555B (zh) * 2021-09-26 2023-06-06 深圳市华星光电半导体显示技术有限公司 量子点基板的制作方法及量子点基板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6750438B2 (en) * 2001-03-14 2004-06-15 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Single-element electron-transfer optical detector system
US20070114120A1 (en) * 2005-06-04 2007-05-24 Gregory Konesky Morphological control of carbon manotubes
US20070207318A1 (en) * 2004-07-21 2007-09-06 Sungho Jin Catalytically Grown Mano-Bent Nanostructure and Method for Making the Same
US20070243326A1 (en) * 2005-08-04 2007-10-18 The Regents Of The University Of California Synthesis of single-walled carbon nanotubes
US7359694B2 (en) * 2004-12-16 2008-04-15 Northrop Grumman Corporation Carbon nanotube devices and method of fabricating the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1129990A1 (fr) * 2000-02-25 2001-09-05 Lucent Technologies Inc. Procédé de croissance contrôlée de nanotubes de carbone
EP1401763B2 (fr) * 2001-07-03 2010-02-10 Facultés Universitaires Notre-Dame de la Paix Supports catalytiques et nanotubes de carbone produits sur ces supports
US6835613B2 (en) * 2001-12-06 2004-12-28 University Of South Florida Method of producing an integrated circuit with a carbon nanotube

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6750438B2 (en) * 2001-03-14 2004-06-15 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Single-element electron-transfer optical detector system
US20070207318A1 (en) * 2004-07-21 2007-09-06 Sungho Jin Catalytically Grown Mano-Bent Nanostructure and Method for Making the Same
US7359694B2 (en) * 2004-12-16 2008-04-15 Northrop Grumman Corporation Carbon nanotube devices and method of fabricating the same
US20070114120A1 (en) * 2005-06-04 2007-05-24 Gregory Konesky Morphological control of carbon manotubes
US20070243326A1 (en) * 2005-08-04 2007-10-18 The Regents Of The University Of California Synthesis of single-walled carbon nanotubes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NOJEH, A ET AL.: "Electric-field-directed growth of carbon nanotubes in two dimensions", J. VAC. SCI. TECHNOL., vol. B22, no. 6, November 2004 (2004-11-01), Retrieved from the Internet <URL:http://www.nano.ece.ufl.edu/publication/e-field-2D-JVSTB.pdf> [retrieved on 20100408] *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3225588A1 (fr) * 2016-03-31 2017-10-04 The Boeing Company Tapis de nanotubes de carbone entrelacés
US10619246B2 (en) 2016-03-31 2020-04-14 The Boeing Company Interwoven Carbon Nanotube Mats

Also Published As

Publication number Publication date
US9056777B2 (en) 2015-06-16
US20110171111A1 (en) 2011-07-14
US20150239739A1 (en) 2015-08-27

Similar Documents

Publication Publication Date Title
He et al. Horizontal single-walled carbon nanotube arrays: Controlled synthesis, characterizations, and applications
Fan et al. Template‐assisted large‐scale ordered arrays of ZnO pillars for optical and piezoelectric applications
Lan et al. Physics and applications of aligned carbon nanotubes
Wang Zinc oxide nanostructures: growth, properties and applications
US8372470B2 (en) Apparatus and methods for controlled growth and assembly of nanostructures
US8080281B2 (en) Growth and applications of ultralong carbon nanotubes
US7507987B2 (en) Method of making packets of nanostructures
TW202233520A (zh) 具有碳同素異形體之無晶種粒子
US20050112051A1 (en) Systems and methods for producing single-walled carbon nanotubes (SWNTS) on a substrate
EP2397440A1 (fr) Matériau support utilisable en vue de la production d&#39;un agrégat de nanotubes de carbone orientés et procédé de production d&#39;un agrégat de nanotubes de carbone orientés
WO2007001357A2 (fr) Systeme et procede de regulation de la croissance de nanostructures
WO2002008121A2 (fr) Procede de conception d&#39;un nanotube et nanotube ainsi forme
WO2000009443A1 (fr) Structures de nanotubes en carbone fabriquees au moyen d&#39;ilots catalyseurs
JP5574257B2 (ja) カーボンナノチューブ生成用再利用基材及びカーボンナノチューブ生成用基材並びにその製造方法
KR20110021721A (ko) 탄소선 및 탄소막으로 이루어지는 나노 구조체 및 그들의 제조 방법
US20150239739A1 (en) Bent carbon nanotubes and methods of production
CN101559939B (zh) 碳纳米管制备方法
US20100239491A1 (en) Method of producing carbon nanotubes
JP6158798B2 (ja) ナノ構造を含む装置及びその製造方法
EP1666409A1 (fr) Procede pour controler la structure d&#39;une substance nanometrique et procede pour preparer une structure quantique de faibles dimensions nanometriques au moyen du procede de controle
Zhang et al. A novel synthesis method for aligned carbon nanotubes in organic liquids
JP2004051432A (ja) カーボンナノチューブの製造用基板及びそれを用いたカーボンナノチューブの製造方法
Sangpour et al. ZnO nanowires from nanopillars: Influence of growth time
JP2014185072A (ja) カーボンナノチューブ生成用再利用基材の製造方法
CN114014297A (zh) 一种碳纳米管环及其制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09827950

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 13119875

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09827950

Country of ref document: EP

Kind code of ref document: A1