WO2010049230A3 - Verfahren zur herstellung monokristalliner n-silizium-rückseitenkontakt-solarzellen - Google Patents

Verfahren zur herstellung monokristalliner n-silizium-rückseitenkontakt-solarzellen Download PDF

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Publication number
WO2010049230A3
WO2010049230A3 PCT/EP2009/062619 EP2009062619W WO2010049230A3 WO 2010049230 A3 WO2010049230 A3 WO 2010049230A3 EP 2009062619 W EP2009062619 W EP 2009062619W WO 2010049230 A3 WO2010049230 A3 WO 2010049230A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cells
contact solar
rear contact
silicon
producing monocrystalline
Prior art date
Application number
PCT/EP2009/062619
Other languages
English (en)
French (fr)
Other versions
WO2010049230A2 (de
Inventor
Hans-Joachim Krokoszinski
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to EP09783554A priority Critical patent/EP2353194A2/de
Publication of WO2010049230A2 publication Critical patent/WO2010049230A2/de
Publication of WO2010049230A3 publication Critical patent/WO2010049230A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung monokristalliner n- Silizium-Rückseitenkontakt-Solarzellen mit spezieller Struktur für einen lichtabgewandten rückseitigen, passivierten p+ -Emitter und räumlich getrennten n+ -(BSF)-Bereichen sowie vorderseitigem n+ -Profil. Erfindungsgemäß wird auf der Rückseite des Siliziumwafers eine Aluminium- oder aluminiumhaltige Dünnschicht aufgebracht und anschließend eine Strukturierung der Dünnschicht zum Erhalt lokaler Ausnehmungen vorgenommen. Weiterhin wird die so erhaltene Struktur mit einem Dielektrikum versehen, welches darauffolgend mittels Maskierung lokal entfernt wird, wobei die Maskierung im Ausnehmungsbereich so erfolgt, dass bei der anschließenden Phosphordotierung ein Kontakt zwischen Emitter- und BSF-Dotanden ausgeschlossen ist.
PCT/EP2009/062619 2008-10-31 2009-09-29 Verfahren zur herstellung monokristalliner n-silizium-rückseitenkontakt-solarzellen WO2010049230A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP09783554A EP2353194A2 (de) 2008-10-31 2009-09-29 Verfahren zur herstellung monokristalliner n-silizium-rückseitenkontakt-solarzellen

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008054091 2008-10-31
DE102008054091.9 2008-10-31
DE102009015764.6 2009-03-31
DE102009015764A DE102009015764A1 (de) 2008-10-31 2009-03-31 Verfahren zur Herstellung monokristalliner n-Silizium-Rückseitenkontakt-Solarzellen

Publications (2)

Publication Number Publication Date
WO2010049230A2 WO2010049230A2 (de) 2010-05-06
WO2010049230A3 true WO2010049230A3 (de) 2011-05-26

Family

ID=42129355

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/062619 WO2010049230A2 (de) 2008-10-31 2009-09-29 Verfahren zur herstellung monokristalliner n-silizium-rückseitenkontakt-solarzellen

Country Status (3)

Country Link
EP (1) EP2353194A2 (de)
DE (1) DE102009015764A1 (de)
WO (1) WO2010049230A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106992219A (zh) * 2017-05-11 2017-07-28 盐城天合国能光伏科技有限公司 一种太阳电池铝背场结构及其制作方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010024835A1 (de) * 2010-06-23 2011-12-29 International Solar Energy Research Center Konstanz Method for fabrication of a back side contact solar cell
US8853524B2 (en) * 2011-10-05 2014-10-07 International Business Machines Corporation Silicon solar cell with back surface field
DE102011088899A1 (de) * 2011-12-16 2013-06-20 International Solar Energy Research Center Konstanz E.V. Rückkontakt-Solarzelle und Verfahren zur Herstellung einer Rückkontakt-Solarzelle

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0776051A2 (de) * 1995-11-22 1997-05-28 Ebara Solar Inc Struktur und Herstellungsverfahren einer Solarzelle mit selbstjustiertem Übergang von Aluminiumlegierung und Rückseitenkontakt
WO2009101107A1 (de) * 2008-02-15 2009-08-20 Ersol Solar Energy Ag Verfahren zur herstellung monokristalliner n-silizium-solarzellen sowie solarzelle, hergestellt nach einem derartigen verfahren

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0776051A2 (de) * 1995-11-22 1997-05-28 Ebara Solar Inc Struktur und Herstellungsverfahren einer Solarzelle mit selbstjustiertem Übergang von Aluminiumlegierung und Rückseitenkontakt
WO2009101107A1 (de) * 2008-02-15 2009-08-20 Ersol Solar Energy Ag Verfahren zur herstellung monokristalliner n-silizium-solarzellen sowie solarzelle, hergestellt nach einem derartigen verfahren

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CUEVAS A ED - INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS: "A good recipe to make silicon solar cells", PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE. LAS VEGAS, OCT. 7 - 11, 1991; [PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE], NEW YORK, IEEE, US, vol. CONF. 22, 7 October 1991 (1991-10-07), pages 466 - 470, XP010039214, ISBN: 978-0-87942-636-1, DOI: DOI:10.1109/PVSC.1991.169259 *
CUEVAS A ET AL: "Back junction solar cells on n-type multicrystalline and CZ silicon wafers", PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (IEEE CAT. NO.03CH37497) ARISUMI PRINTING INC JAPAN, JAPAN; [PROCEEDINGS OF THE WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION], ARISUMI PRINTING INC, JP, vol. 1, 11 May 2003 (2003-05-11), pages 963 - 966, XP009142050, ISBN: 978-4-9901816-0-4, DOI: DOI:10.1109/WCPEC.2003.1305443 *
SEXTON F W ET AL: "Process for high photocurrent in IBC solar cells", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, vol. 129, no. 11, 1 November 1982 (1982-11-01), pages 2624 - 2628, XP007916249, ISSN: 0013-4651 *
VAN KERSCHAVER E ET AL: "Back-contact solar cells: a review", PROGRESS IN PHOTOVOLTAICS. RESEARCH AND APPLICATIONS, JOHN WILEY AND SONS, CHICHESTER, GB, vol. 14, no. 2, 1 March 2006 (2006-03-01), pages 107 - 123, XP002577679, ISSN: 1062-7995, [retrieved on 20051220], DOI: DOI:10.1002/PIP.657 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106992219A (zh) * 2017-05-11 2017-07-28 盐城天合国能光伏科技有限公司 一种太阳电池铝背场结构及其制作方法

Also Published As

Publication number Publication date
EP2353194A2 (de) 2011-08-10
DE102009015764A1 (de) 2010-06-17
WO2010049230A2 (de) 2010-05-06

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