WO2010045655A8 - Thick semiconductor drift detector fabrication - Google Patents
Thick semiconductor drift detector fabrication Download PDFInfo
- Publication number
- WO2010045655A8 WO2010045655A8 PCT/US2009/061200 US2009061200W WO2010045655A8 WO 2010045655 A8 WO2010045655 A8 WO 2010045655A8 US 2009061200 W US2009061200 W US 2009061200W WO 2010045655 A8 WO2010045655 A8 WO 2010045655A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- trenches
- drift detector
- semiconductor drift
- thick semiconductor
- trench
- Prior art date
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70416—2.5D lithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Molecular Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Measurement Of Radiation (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Gray- tone lithography technology is used in combination with a reactive plasma etching operation in the fabrication method and system of a thick semiconductor drift detector (1502). The thick semiconductor drift detector (1502) is based on a trench (1614) array, where the trenches (1614) in the trench (1614) array penetrate the bulk with different depths. These trenches (1614) form an electrode. By applying different electric potentials to the trenches (1614) in the trench (1614) array, the silicon between neighboring trenches (1614) fully depletes. Furthermore, the applied potentials cause a drifting field for generated charge carriers, which are directed towards a collecting electrode (1608).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/408,852 US8481953B2 (en) | 2008-08-21 | 2012-02-29 | Methods and systems of isolating segmented radiation detectors using alumina |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10646008P | 2008-10-17 | 2008-10-17 | |
US61/106,460 | 2008-10-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010045655A1 WO2010045655A1 (en) | 2010-04-22 |
WO2010045655A8 true WO2010045655A8 (en) | 2010-12-02 |
Family
ID=42106948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/061200 WO2010045655A1 (en) | 2008-08-21 | 2009-10-19 | Thick semiconductor drift detector fabrication |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2010045655A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7968959B2 (en) | 2008-10-17 | 2011-06-28 | The United States Of America As Represented By The Secretary Of The Navy | Methods and systems of thick semiconductor drift detector fabrication |
US9530902B2 (en) * | 2012-06-20 | 2016-12-27 | Oxford Instruments Analytical Oy | Two-dimensional guard structure and a radiation detector with the same |
CN108920758A (en) * | 2018-05-30 | 2018-11-30 | 李正 | The cylindrical two-sided silicon drifting detector (SDD) of large area concentric circles and its design method |
CN110350044B (en) * | 2019-04-01 | 2024-04-19 | 湖南脉探芯半导体科技有限公司 | Square spiral silicon drift detector and preparation method thereof |
CN112071873A (en) * | 2020-09-30 | 2020-12-11 | 湖南正芯微电子探测器有限公司 | Silicon drift detector and junction field effect transistor integrated chip and manufacturing method |
CN115207140B (en) * | 2022-07-15 | 2024-03-08 | 上海科技大学 | X-ray detector, preparation method and application thereof |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6204087B1 (en) * | 1997-02-07 | 2001-03-20 | University Of Hawai'i | Fabrication of three-dimensional architecture for solid state radiation detectors |
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2009
- 2009-10-19 WO PCT/US2009/061200 patent/WO2010045655A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2010045655A1 (en) | 2010-04-22 |
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