WO2010045655A8 - Thick semiconductor drift detector fabrication - Google Patents

Thick semiconductor drift detector fabrication Download PDF

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Publication number
WO2010045655A8
WO2010045655A8 PCT/US2009/061200 US2009061200W WO2010045655A8 WO 2010045655 A8 WO2010045655 A8 WO 2010045655A8 US 2009061200 W US2009061200 W US 2009061200W WO 2010045655 A8 WO2010045655 A8 WO 2010045655A8
Authority
WO
WIPO (PCT)
Prior art keywords
trenches
drift detector
semiconductor drift
thick semiconductor
trench
Prior art date
Application number
PCT/US2009/061200
Other languages
French (fr)
Other versions
WO2010045655A1 (en
Inventor
Marc Christophersen
Bernard F. Philps
Original Assignee
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Government Of The United States Of America, As Represented By The Secretary Of The Navy filed Critical The Government Of The United States Of America, As Represented By The Secretary Of The Navy
Publication of WO2010045655A1 publication Critical patent/WO2010045655A1/en
Publication of WO2010045655A8 publication Critical patent/WO2010045655A8/en
Priority to US13/408,852 priority Critical patent/US8481953B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70416—2.5D lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Molecular Biology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Measurement Of Radiation (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Gray- tone lithography technology is used in combination with a reactive plasma etching operation in the fabrication method and system of a thick semiconductor drift detector (1502). The thick semiconductor drift detector (1502) is based on a trench (1614) array, where the trenches (1614) in the trench (1614) array penetrate the bulk with different depths. These trenches (1614) form an electrode. By applying different electric potentials to the trenches (1614) in the trench (1614) array, the silicon between neighboring trenches (1614) fully depletes. Furthermore, the applied potentials cause a drifting field for generated charge carriers, which are directed towards a collecting electrode (1608).
PCT/US2009/061200 2008-08-21 2009-10-19 Thick semiconductor drift detector fabrication WO2010045655A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/408,852 US8481953B2 (en) 2008-08-21 2012-02-29 Methods and systems of isolating segmented radiation detectors using alumina

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10646008P 2008-10-17 2008-10-17
US61/106,460 2008-10-17

Publications (2)

Publication Number Publication Date
WO2010045655A1 WO2010045655A1 (en) 2010-04-22
WO2010045655A8 true WO2010045655A8 (en) 2010-12-02

Family

ID=42106948

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/061200 WO2010045655A1 (en) 2008-08-21 2009-10-19 Thick semiconductor drift detector fabrication

Country Status (1)

Country Link
WO (1) WO2010045655A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7968959B2 (en) 2008-10-17 2011-06-28 The United States Of America As Represented By The Secretary Of The Navy Methods and systems of thick semiconductor drift detector fabrication
US9530902B2 (en) * 2012-06-20 2016-12-27 Oxford Instruments Analytical Oy Two-dimensional guard structure and a radiation detector with the same
CN108920758A (en) * 2018-05-30 2018-11-30 李正 The cylindrical two-sided silicon drifting detector (SDD) of large area concentric circles and its design method
CN110350044B (en) * 2019-04-01 2024-04-19 湖南脉探芯半导体科技有限公司 Square spiral silicon drift detector and preparation method thereof
CN112071873A (en) * 2020-09-30 2020-12-11 湖南正芯微电子探测器有限公司 Silicon drift detector and junction field effect transistor integrated chip and manufacturing method
CN115207140B (en) * 2022-07-15 2024-03-08 上海科技大学 X-ray detector, preparation method and application thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204087B1 (en) * 1997-02-07 2001-03-20 University Of Hawai'i Fabrication of three-dimensional architecture for solid state radiation detectors

Also Published As

Publication number Publication date
WO2010045655A1 (en) 2010-04-22

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