WO2010018497A1 - Détecteur de mammographie pour l’examen médical d’un sein féminin - Google Patents

Détecteur de mammographie pour l’examen médical d’un sein féminin Download PDF

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Publication number
WO2010018497A1
WO2010018497A1 PCT/IB2009/053434 IB2009053434W WO2010018497A1 WO 2010018497 A1 WO2010018497 A1 WO 2010018497A1 IB 2009053434 W IB2009053434 W IB 2009053434W WO 2010018497 A1 WO2010018497 A1 WO 2010018497A1
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WO
WIPO (PCT)
Prior art keywords
image sensing
group
multiplexer
detector
photo diodes
Prior art date
Application number
PCT/IB2009/053434
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English (en)
Inventor
Roelf Van Der Wal
Abhishek Kumar
Chiel Smit
Onno J. Wimmers
Original Assignee
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics N.V. filed Critical Koninklijke Philips Electronics N.V.
Publication of WO2010018497A1 publication Critical patent/WO2010018497A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/02—Arrangements for diagnosis sequentially in different planes; Stereoscopic radiation diagnosis
    • A61B6/03—Computed tomography [CT]
    • A61B6/032—Transmission computed tomography [CT]
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
    • A61B6/4208—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector
    • A61B6/4233—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector using matrix detectors
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/50—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment specially adapted for specific body parts; specially adapted for specific clinical applications
    • A61B6/502—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment specially adapted for specific body parts; specially adapted for specific clinical applications for diagnosis of breast, i.e. mammography

Definitions

  • the present invention relates to a mammography detector for the medical examining of a female breast, and in particular to a method for scanning a female breast. Further, the present invention relates to a programme element, which, when being executed by a processor, is adapted to carry out the method according to the present invention. Furthermore, the present invention relates to a computer readable medium having stored the inventive programme element.
  • mammography detectors which comprise photo diodes (pixels) for scanning the female breast. The photo diodes generate charges in case of e.g. X-rays. These charges can be evaluated by charge sensitive amplifiers. For selecting the different photo diodes in order to evaluate the corresponding charges there are control lines.
  • the aim is to realize a full field digital mammography detector.
  • mammography it is important to distinguish small details. To make this possible, it is necessary to have a detector with small pixels, while maintaining high signal to noise ratio.
  • a very cost effective technology for realizing such a detector is amorphous silicon technology.
  • the first problem is the number of interconnects and the small pitch of these interconnects. All the rows and columns of the pixel array have to be connected with the control electronics. This is mostly done with flex foils. These are bonded to the detector plate with for instance an ACF process. Due to the small bonding pitch that is necessary and the large number of connections that are necessary, the assembly will take a long time, and the yield will be small.
  • the second problem is the noise. Due to the small pixels, the signal of each pixel will be small, and therefore the signal-to-noise ratio will be small. To overcome this problem, one possibility is to increase the filling factor of a pixel. This can be realized with multi level technology.
  • the photo diode is patterned in a second layer on top of the thin film transistor.
  • the thin film transistor is not occupying a part of the filling factor of the photo diode.
  • the signal-to noise ratio can be further improved by decreasing the electronic noise.
  • a major part of the electronic noise is due to the data- column capacitance.
  • the input noise of the charge sensitive amplifier (CSA) is multiplied with the ratio of the data-column capacitance and the integration capacitance of the CSA. The higher the data-column capacitance is, the higher the electronic noise.
  • the data-column capacitance is e.g. determined by the capacitance of all the thin film transistors in the pixels connected to the data-column.
  • the inventive concept is to minimize the number of thin film transistors connected to one data-column by applying multiplex thin film transistors in the pixel array.
  • a mammography detector for the medical examining of a female breast comprising an image sensor, wherein the image sensor comprises a first group consisting of at least two image sensing pixels, and a first multiplexer, which is adapted to address directly a first image sensing pixel out of the first group.
  • the mammography detector according to the invention could be also used as an universal/general detector.
  • the mammography detector could be applied e.g. for examining mechanical parts e.g. instead of scanning female breasts because of suspicion of cancer.
  • the detector comprises a group of photo diodes.
  • the total amount of photo diodes will be divided in groups of photo diodes, wherein the groups of photo diodes comprise the same number of photo diodes. For instance one group comprises four photo diodes then the image sensor comprises normally a total number of photo diodes, which is divisable by the divisor 4. It is also possible to divide the quantity of photo diodes of an image sensor into groups of e.g. 2, 6 or any other integer number of photo diodes.
  • the single members of a group of photo diodes will be addressed by a multiplexer, wherein the multiplexer addresses typically one member of the group of photo diodes of every group.
  • the multiplexer controls the members of the groups directly, what means that there is no further device e.g. a logic unit between the multiplexer and the addressed image sensing pixel.
  • the control signals, which are emitted by the multiplexer serve to control the switches of the array of pixels, in order to evaluate the charges of the photo diodes.
  • the output signals of the multiplexer define directly which switch is closed and which charge will be read out.
  • image sensing pixels are photo diodes.
  • the array of photo diodes could comprise 512 rows of photo diodes and 512 columns of photo diodes. Then, there would be a total of 262144 photo diodes. In case the photo diodes would be shaped in groups of 4 photo diodes there were 65536 groups of photo diodes. Every group of photo diodes is arranged along two different rows and two different columns (every group is arranged as an array of 2 x 2 photo diodes). Therefore, there is an array of 256 x 256 groups of photo diodes. Assuming that there are 256 charge sensitive amplifiers there would be 256 control lines necessary to select one group for every amplifier.
  • a programme element which, when being executed by a processor, is adapted to carry out the method of claim 9.
  • a computer readable medium having stored the programme element of claim 10.
  • the image sensor comprises a second group consisting of at least two image sensing pixels, and a second multiplexer, which is adapted to address directly a second image sensing pixel out of the second group.
  • all pixels of the sensor are grouped in groups of e.g. 2, 4, 6 photo diodes. These groups can be addressed by one or several multiplexers.
  • the output of the multiplexers addresses the switches of the corresponding photo diodes in order to evaluate the charges of the photo diodes.
  • a detector wherein the first multiplexer is identical to the second multiplexer.
  • the inventive concept comprises arrangements with only one or several multiplexers for selecting one photo diode of every group. Usually, there is only one mutliplexer.
  • a detector wherein first resulting image sensing pixels are addressed by the first multiplexer, wherein second resulting image sensing pixels are addressed by the second multiplexer, wherein the detector comprises a control line, wherein the control line is adapted to address selected image sensing pixels out of the group consisting of the first resulting image sensing pixels and the second resulting image sensing pixels.
  • a detector comprising a charge sensitive amplifier, which is adapted to detect the charge of an image sensing pixel out of the group consisting of the selected image sensing pixels, wherein the charge of the image sensing pixel is generated in case the image sensing pixel is exposed to light.
  • There are drivers for controlling switches with the help of control lines wherein the charge of a photo diode can be evaluated if the corresponding switch is closed.
  • the charges will be evaluated with amplifiers, which comprise typically a low- pass filter.
  • a detector wherein the image sensing pixels of the first group are arranged adjacent.
  • the single photo diodes of a group are arranged adjacent in order to minimize the length of control lines and connections to the photo diodes.
  • a further effect is the minimization of connections to the switches and capacitors, which belong to the photo diodes of the group.
  • a detector wherein the image sensing pixels of the second group are arranged adjacent.
  • a detector wherein the first group consists of an integer number of image sensing pixels. It is senseful to use groups of 2, 4, 6 or any other integer number of photo diodes to form groups of photo diodes. It may be seen as a gist of the present invention to reduce the necessary number of control lines of an array of photo diodes. By reducing the number of photo diodes it is possible to arrange an increased number of photo diodes in the same area. This effect results in an increased resolution of the image sensing detector, wherein very small details can be distinguished. It should be noted that the above features may also be combined. The combination of the above features may also lead to synergetic effects, even if not explicitly described in detail.
  • Fig. 1. shows the grouping of e.g. four pixels, wherein the pixels of every group of four pixels is selected by one multiplexer
  • Fig. 2. shows voltage diagrams of switches, wherein a high voltage means a closed switch
  • Fig. 3. shows an embodiment of a sensor
  • Fig. 4. shows an embodiment of a sensor
  • Fig. 5. shows an embodiment of a sensor
  • Fig. 6. shows an embodiment of a sensor
  • Fig. 7. shows an embodiment of a sensor
  • Fig. 8. shows an arrangement of photo diodes according to the prior art
  • FFiigg.. 99.. shows an arrangement of groups of photo diodes according to the inventive concept
  • Fie. 10. shows the processing of the charge of an photo diode.
  • Fig. 1 shows three groups of four photo diodes 106. Every single photo diode 106 is connected with a switch 107. A group of photo diodes is formed by joining the outputs of switches 107. The photo diode 106 can generate a charge due to exposure of e.g. visible ligt or X-ray radiation. In case the switch 107 is closed the charge of the photo diode 106 can be detected from the node of the switches, which belong to the grouped photo diodes 106. The switches of the group is selected e.g. by a multiplexer 104, wherein the multiplexer 104 selects one photo diode 106 of every group of photo diodes 106.
  • the multiplexer 104 drives control lines A, B, C, D, which select one of the switches 107.
  • the groups of photo diodes 106 are selected by switches E, F, G, wherein these switches are controlled by control lines 101. As a result the charge of one photo diode 106 can be detected via the data column 102. This charge will be processed with the help of the charge sensitive amplifier 103.
  • Fig. 1 shows an embodiment of an inventive circuit, wherein one multiplex switch is connecting four pixels.
  • the number of thin film transistors connected to one data column is reduced with 75%. And therefore the data- column capacitance is reduced significantly.
  • a second advantage is that the number of gate line drivers is also reduced with 75%. This reduces the number of interconnects significantly without reducing the read-out speed much.
  • one of the four diodes of a pixel cluster is selected in the whole array. Then the complete array is scanned. Subsequently, the second diodes are selected, the complete array is scanned for the second time, and unto the last diode is selected and read-out by the CSA.
  • the second shows a diagram of voltages, wherein a high voltage means that the corresponding switch is conducting.
  • the first diagram shows the high voltage 201 during a first period of time. Therefore, during this period of time one single photo diode from every group of photo diodes 106 is selected. Now it is necessary to select the group of photo diodes 106, in order to receive the charge of only one single photo diode 106. This is achieved by controlling one of the switches E, F or G. Therefore, during the first period of time 201 it can be selected one of the switches E, F or G.
  • the first group of photo diodes is selected and one single photo diode of this group is selected by the high voltage, which drives the switch A.
  • another photo diode 106 of the groups of photo diodes can be selected according to the voltages 205, 206, 207.
  • the voltages 201, 202, 203 and 204 provide the possibility to select single photo diodes 106 of the groups of photo diodes.
  • the selection of the group of photo diodes is achieved by the switches E, F and G.
  • the switches E, F and G are controlled by the voltages 205, 206, 207.
  • Fig. 3 shows an arrangement of photo diodes and the corresponding
  • PCB-layout Further, it is shown a circuit with one multiplex switch connecting four pixels.
  • the number of pixels connected by one multiplex switch can vary from two unto a very high number.
  • the theoretical minimum in data column capacitance occurs when the number of multiplex switches equals the root of the total number of pixels in one column. However this is an impractical high number.
  • Fig. 3 shows an implementation from a circuit with one multiplexer connecting two pixels.
  • the fig. 3 shows the gate drivers 302, 303 and the drivers 304, 305, that have to select all of the odd or even pixels. There need to be only two of these drivers 304, 305 on the complete array.
  • the gate-lines, which are starting from the gate drivers 302, 303, are shown together with the gates of the thin film transistors.
  • Fig. 3 shows the CSAs (charge sensitive amplifiers) 301, wherein the CSAs are supplied by the data columns 306.
  • the bars 307 show the local data columns, together with the drain and source of the thin film transistors.
  • the circles 308 show the connection vias to the photo diode.
  • the circles 309 show the vias connecting the thin film transistor with the data column 306. The photo diodes on top and the common bars are not shown in this picture, to get a more clear view.
  • the photo diode is placed on top, and therefore the extra multiplex switch does not reduce the filling factor.
  • Fig. 4 shows an arrangement of photo diodes.
  • the gate drivers 402 and 403 in combination with the drivers 404, 405 by which one single photo diode for every charge sensitive amplifier 401 can be selected.
  • the gate- lines, which are starting from the gate drivers 402, 404 are shown together with the gates of the thin film transistor. It is also shown the charge sensitive amplifiers 401, wherein the charge sensitive amplifiers are supplied by the data columns 406.
  • the bars 407 show the local data columns together with the drain and source of the thin film transistors.
  • the circles 408 show the connection vias to the photo diode.
  • the circles 409 show the vias connecting the thin film transistor with the data column 406.
  • the photo diodes on top and the common bars are not shown.
  • FIG. 4 shows an embodiment, wherein it is not necessary if the gate line of the lowest pixel from the upper pixel-group is combined with the gate line of the upper pixel from the lower pixel-group.
  • the number of gate columns can be kept the same as without the multiplex switches.
  • the pitch of the gate drivers is increased with 100%.
  • the pitch of the CSAs still equals the pixel pitch.
  • Fig. 5 shows how this can be solved by placing the CSAs on both sides of the array.
  • Fig. 5 shows the gate drivers 502, 503 as well as the drivers 504 and 505.
  • the charge sensitive amplifiers 501 are supplied by the data columns 506, wherein the data columns 506 are connected with the help of vias 509 with the thin film transistor.
  • the bars 507 are local data columns.
  • the same tricks are possible with other multiplex factors, like 1 to 4. This is shown in the figs. 6 and 7. In this case, the pitch of the CSAs is kept the same, while the pitch of the drivers is four times the pixel pitch.
  • Fig. 6 shows gate drivers 602, 603 and drivers 604, 605, 610, 611 for selecting one single photo diode for every charge sensitive amplifier 601.
  • the charge sensitive amplifiers 601 are supplied by the data columns 606.
  • the bars 607 are the local data columns.
  • the data columns 606 are connected with thin film transistors by vias 609.
  • Fig. 7 shows charge sensitive amplifiers 701, which are supplied by data columns 706.
  • the data columns 706 are connected with thin film transistors with the help of vias 712.
  • the bars 707 are local data columns.
  • the groups of pixels read out by one multiplex switch can be chosen in such a way that both the pixel pitch of the drivers and of the CSAs become twice the pixel pitch. This is shown in the fig. 7.
  • the advantage of this scheme is that there is no need to place the CSAs at both sides of the panel. This gives more design freedom. It is now for example possible to chose the data columns to be the shortest lines of the panel, or to divide the panel in two halves while placing CSA's at both sides of the panel to reduce the data column length with 50%.
  • the drawback is a more complex pixel reordering. Fig.
  • FIG. 8 shows an array of photo diodes 802, 805 according to the prior art, wherein capacitors 806, 809 are arranged parallel to the photo diodes 802, 805 in order to load the charge of the photo diodes 802, 805.
  • the gate drivers 810 of the part 808 select one row of photo diodes 802, 805, wherein a corresponding row of charge sensitive amplifiers 801 evaluates the charges generated by the photo diodes 802, 805.
  • the gate drivers 810 are switching on the switches 803, 804 via the control lines 807.
  • the switches 803, 804 can be shaped as a thin film transistor. According to the prior art it is necessary to arrange two rows of amplifiers 801, wherein every row of amplifiers comprises the same number of amplifiers compared with a row of photo diodes.
  • FIG. 9 shows an arrangement of photo diodes 905 according to the inventive concept.
  • groups 902 of four photo diodes 905 are arranged.
  • a group 902 of photo diodes 905 is selected by the gate drivers 908 of the part 904.
  • the gate drivers 908 can switch on the corresponding group 902 of photo diodes 905 with the help of the control lines 903.
  • a multiplexer is selecting one single photo diode 905 of every group 902 of photo diodes 905.
  • the charge of the selected photo diodes 905 will be transmitted to the charge sensitive amplifiers 901 with the help of the data columns 910.
  • the arrangement comprises only half the number of the arrangement of the prior art, depicted in the figure 8. Due to the grouping of photo diodes 905 the length of the data columns 910 can be reduced, which results in a reduced capacitance and therefore reduced noise. Parallel to the photo diodes 905 there are capacitors 906 in order to load the charge of the photo diode 905.
  • the switches 907 will be controlled by the multiplexer 909.
  • the switches 911 will be controlled by the part 904.
  • the switches 907 and/or 911 can be thin film transistors, e.g..
  • Fig. 10 shows a circuit comprising a photo diode 1002 for generating a charge and a charge sensitive amplifier.
  • the charge sensitive amplifier comprises an amplifier 1001, wherein one input of the amplifier 1001 is supplied by a constant voltage source 1005 with the voltage Uo.
  • the second input of the amplifier 1001 will be supplied by a capacitor 1006 that is also connected to the output of the amplifier
  • the capacitor transforms the charge of the photo diode 1002 into a voltage. Further, there is a capacitor 1004 which represents the data column capacitance.
  • the invention can be applied in any amorphous silicon X-ray detector where noise or the number of interconnects is an important issue. This includes cardio and vascular, general X-ray and mammography. In those applications where speed is an even more important specification point, it is less likely that the invention will be used, because of the higher resistance in series with the pixel capacitance (2 x thin film transistor in series). For very small pixels however, there is no other choice in amorphous silicon, due to the very high number of interconnects. For very small pixels, the time constant determined by the pixel capacitance and the thin film transistor resistance will not increase. Although the resistance is increased, because the pixel capacitance of small pixels is very small, the total time constant will not increase.

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Medical Informatics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Surgery (AREA)
  • Biomedical Technology (AREA)
  • Veterinary Medicine (AREA)
  • Biophysics (AREA)
  • Public Health (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Optics & Photonics (AREA)
  • Pathology (AREA)
  • Radiology & Medical Imaging (AREA)
  • General Health & Medical Sciences (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Physics & Mathematics (AREA)
  • Pulmonology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un détecteur de mammographie destiné à l’examen médical d’un sein féminin, le détecteur comprenant un capteur d’image, le capteur d’image comportant un premier groupe constitué d’au moins deux pixels de capture d’image et un premier multiplexeur prévu pour l’adressage direct d’un premier pixel de capture d’image issu du premier groupe. L'invention concerne également un procédé d’exploration d’un sein féminin, comportant l’étape consistant à balayer à l’aide d’un détecteur selon la présente invention. L'invention concerne en outre un élément de programme qui, lorsqu’il est exécuté par un processeur, est prévu pour réaliser le procédé selon l’invention. Un autre aspect de l’invention concerne un support lisible par ordinateur sur lequel est stocké l’élément de programme selon l’invention.
PCT/IB2009/053434 2008-08-14 2009-08-06 Détecteur de mammographie pour l’examen médical d’un sein féminin WO2010018497A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08105044 2008-08-14
EP08105044.5 2008-08-14

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WO2010018497A1 true WO2010018497A1 (fr) 2010-02-18

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689487A (en) * 1984-09-03 1987-08-25 Kabushiki Kaisha Toshiba Radiographic image detection apparatus
US4810881A (en) * 1986-04-30 1989-03-07 Thomson-Csf Panel for X-ray photography and method of manufacture
US6208708B1 (en) * 1998-06-23 2001-03-27 Siemens Aktiengesellschaft X-ray mammography apparatus having a solid-state radiation detector
US20030095629A1 (en) * 2001-11-17 2003-05-22 Augusto Nascetti Arrangement of sensor elements
US20080087834A1 (en) * 2006-10-12 2008-04-17 Fujifilm Corporation Radiation image detector

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689487A (en) * 1984-09-03 1987-08-25 Kabushiki Kaisha Toshiba Radiographic image detection apparatus
US4810881A (en) * 1986-04-30 1989-03-07 Thomson-Csf Panel for X-ray photography and method of manufacture
US6208708B1 (en) * 1998-06-23 2001-03-27 Siemens Aktiengesellschaft X-ray mammography apparatus having a solid-state radiation detector
US20030095629A1 (en) * 2001-11-17 2003-05-22 Augusto Nascetti Arrangement of sensor elements
US20080087834A1 (en) * 2006-10-12 2008-04-17 Fujifilm Corporation Radiation image detector

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