WO2010011033A2 - Cmos image sensor having a signal processing block of an mems acceleration sensor and manufacturing method thereof - Google Patents

Cmos image sensor having a signal processing block of an mems acceleration sensor and manufacturing method thereof Download PDF

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WO2010011033A2
WO2010011033A2 PCT/KR2009/003592 KR2009003592W WO2010011033A2 WO 2010011033 A2 WO2010011033 A2 WO 2010011033A2 KR 2009003592 W KR2009003592 W KR 2009003592W WO 2010011033 A2 WO2010011033 A2 WO 2010011033A2
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image sensor
signal processing
acceleration sensor
processing block
mems acceleration
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WO2010011033A3 (en
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이병수
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(주)실리콘화일
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

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  • the present invention relates to a CMOS image sensor incorporating a signal processing block of the MEMS acceleration sensor and a manufacturing method thereof, and more particularly, to a readout of the MEMS acceleration sensor separately from the MEMS device.
  • the present invention relates to a CMOS image sensor having a signal processing block of a MEMS acceleration sensor installed in a CMOS image sensor to output a signal and an image of the MEMS acceleration sensor, and a manufacturing method thereof. .
  • Accelerometer is a kind of inertial sensor that measures acceleration.
  • its field of application is expanding recently in response to the improvement of performance of automobiles and home appliances or the addition of new functions.
  • MEMS acceleration sensors using a micro-electro-mechanical system hereinafter referred to as 'MEMS'
  • 'MEMS' micro-electro-mechanical system
  • 1 is a view showing a conventional MEMS acceleration sensor.
  • the upper and lower electrodes transmit electrical signals according to a change in resistance value generated when the mass 11 of the central substrate 10 vibrates in proportion to the acceleration of an external force.
  • Outputs to a signal processing device such as an external amplifier or comparator via the 20a and 20b, the upper and lower substrates 40a and 40b, and the upper and lower external terminal pads 50a and 50b.
  • the amplitude of the acceleration corresponding to the external force is detected by amplifying the output signal of the acceleration sensor and the voltage fluctuation value and then comparing it with a preset reference value.
  • a separate signal processing device is required.
  • a signal processing device is manufactured as an application specific integrated circuit (ASIC) and the MEMS (MEMS) was coupled by wire bonding to the acceleration sensor.
  • ASIC application specific integrated circuit
  • MEMS MEMS
  • FIG. 2 is a view showing a MEMS acceleration sensor packaged according to the prior art.
  • a custom semiconductor ASIC for processing an acceleration signal of a MEMS acceleration sensor is wire-bonded to the MEMS acceleration sensor. Afterwards, the MEMS acceleration sensor and the ASIC are packaged integrally.
  • CMOS image sensor When the MEMS acceleration sensor is used together with a CMOS image sensor, a MEMS structure is formed by wire-bonding and packaging the MEMS acceleration sensor and a custom semiconductor (ASIC), and a CMOS image is formed. The sensor chips were packaged separately and then combined.
  • ASIC custom semiconductor
  • a separate semiconductor (ASIC) for signal processing of the MEMS acceleration sensor is required, which is complicated and expensive, and separates the MEMS acceleration sensor and the CMOS image sensor chip separately. There was a problem with packaging.
  • the technical problem to be solved by the present invention is to build a signal processing block for processing the signal detected by the MEMS acceleration sensor to the CMOS image sensor through a CMOS process, without separately manufacturing a custom-made semiconductor (ASIC), hand shake
  • the present invention provides a CMOS image sensor having a signal processing block of a MEMS acceleration sensor capable of correcting an image error due to the present invention and not requiring a separate package for an ASIC.
  • a CMOS image sensor including a signal processing block of a MEMS acceleration sensor, the image sensor unit converting light into an electrical signal; And a signal processing block for processing the signal detected by the MEMS acceleration sensor, converting the signal into an electrical signal, and transferring the signal to the image sensor unit.
  • a method of manufacturing a CMOS image sensor having a signal processing block of a MEMS acceleration sensor according to the present invention for achieving the above technical problem is for processing the acceleration signal of the MEMS acceleration sensor in the CMOS image sensor.
  • the signal processing block is formed using a CMOS process.
  • CMOS image sensor having a signal processing block of the MEMS acceleration sensor according to the present invention and a method for manufacturing the same
  • a signal for processing an acceleration signal of the MEMS acceleration sensor is separately from the MEMS acceleration sensor.
  • 1 is a view showing a conventional MEMS acceleration sensor.
  • FIG. 2 is a view showing a MEMS acceleration sensor packaged according to the prior art.
  • FIG. 3 is a diagram illustrating a configuration of a CMOS image sensor including a signal processing block of a MEMS acceleration sensor according to the present invention.
  • FIG. 3 is a diagram illustrating a configuration of a CMOS image sensor including a signal processing block of a MEMS acceleration sensor according to the present invention.
  • CMOS image sensor 300 including a signal processing block of a MEMS acceleration sensor according to the present invention is used to process signals for processing signals from the image sensor 310 and the MEMS acceleration sensor 330.
  • Block 320 is provided.
  • the image sensor 310 receives light incident from the outside, converts the light into an electrical signal, and sends the light out to the outside. That is, electrons generated by light are converted into voltages in each pixel and then output to the outside through various CMOS switches.
  • the signal processing block 320 processes the acceleration signal detected by the MEMS acceleration sensor 330, converts the acceleration signal into an electrical signal, and transmits the converted electrical signal to the image sensor unit.
  • the image sensor unit 310 may correct an image error caused by a user's movement or hand shake using the acceleration signal transmitted from the signal processing block 320.
  • an acceleration signal may be detected by the image sensor unit to correct an image by detecting the acceleration signal. It converts into electrical signals and delivers them.
  • the signal processing block 320 is formed in the CMOS image sensor 300 through a CMOS process separately from the MEMS acceleration sensor 330.
  • the signal processing block 320 for processing the signal detected by the MEMS acceleration sensor 330 is converted into an electrical signal and transmitted to the image sensor unit, separately manufactured by a custom-made semiconductor (ASIC) and then the MEMS ( MEMS) is not directly wired to the acceleration sensor 330, but is directly formed in a signal processing unit such as a read out circuit of the CMOS image sensor itself in the form of an application-specific semiconductor (ASIC). .
  • ASIC application-specific semiconductor
  • the signal processing block 320 formed inside the CMOS image sensor 300 is connected by wire bonding with the MEMS acceleration sensor 330.
  • the CMOS image sensor 300 and the MEMS acceleration sensor 330 may be packaged on one printed circuit board (PCB) 340.
  • signal processing blocks can be manufactured inside the CMOS image sensor through the CMOS process in the process of manufacturing the CMOS image sensor without the need to separately manufacture the ASIC for MEMS acceleration sensor.
  • MEMS eliminates the need for a separate package for ASICs for acceleration sensors.
  • the signal processing block 320 can grasp the degree of the user's movement or hand shake through the acceleration signal detected by the MEMS acceleration sensor 330 and converts it into an electrical signal to the image sensor unit 310. It is possible to correct the image output from the image sensor unit 310 by transmitting to.

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Abstract

The present invention relates to a CMOS image sensor provided with a signal processing block of an MEMS acceleration sensor, and to a manufacturing method thereof. More particularly, the present invention relates to a CMOS image sensor having a signal processing block of an MEMS acceleration sensor, in which a readout circuit of the MEMS acceleration sensor is arranged in the CMOS image sensor separately from an MEMS element to output signals of the MEMS acceleration sensor and images, and to a manufacturing method thereof.

Description

멤스 가속도 센서의 신호처리블록을 구비한 씨모스 이미지센서 및 그 제조방법CMOS image sensor with signal processing block of MEMS acceleration sensor and manufacturing method
본 발명은 멤스(MEMS) 가속도 센서의 신호처리블록을 내장하는 씨모스 이미지센서 및 그 제조방법에 관한 것으로, 보다 상세하게는 멤스(MEMS)소자와는 별개로 멤스(MEMS) 가속도 센서의 리드아웃 회로를 씨모스 이미지센서 내부에 설치하여 멤스(MEMS) 가속도 센서의 신호와 이미지를 출력할 수 있게 한 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 씨모스 이미지센서 및 그 제조방법에 관한 것이다.The present invention relates to a CMOS image sensor incorporating a signal processing block of the MEMS acceleration sensor and a manufacturing method thereof, and more particularly, to a readout of the MEMS acceleration sensor separately from the MEMS device. The present invention relates to a CMOS image sensor having a signal processing block of a MEMS acceleration sensor installed in a CMOS image sensor to output a signal and an image of the MEMS acceleration sensor, and a manufacturing method thereof. .
가속도 센서는 가속도를 측정하는 관성 센서의 일종으로 연구, 군사용의 특수용도 시장과 더불어 최근에는 자동차 및 가전제품의 성능향상이나 신기능 추가의 요구에 따라 그 적용 분야가 확대되고 있다. 이러한 가속도 센서의 제조 방법과 관련하여 마이크로-전자 기계적 시스템(Micro Electro Mechanical System : 이하 'MEMS'라 한다.) 공정을 이용한 멤스(MEMS)가속도 센서가 널리 사용되고 있다.Accelerometer is a kind of inertial sensor that measures acceleration. In addition to research and military special purpose market, its field of application is expanding recently in response to the improvement of performance of automobiles and home appliances or the addition of new functions. In relation to the manufacturing method of such an acceleration sensor, MEMS acceleration sensors using a micro-electro-mechanical system (hereinafter referred to as 'MEMS') process are widely used.
도 1은 종래의 멤스(MEMS) 가속도 센서를 나타내는 도면이다.1 is a view showing a conventional MEMS acceleration sensor.
도 1에 도시된 종래의 멤스(MEMS) 가속도 센서는 중앙 기판(10)의 질량체(11)가 외력의 가속도에 비례하여 진동할 때 발생하는 저항값의 변화에 따른 전기적 신호를 상기 상부 및 하부 전극(20a, 20b)과 상부 및 하부 기판(40a, 40b), 상부 및 하부 외부단자패드(50a, 50b)를 경유하여 외부의 증폭기나 비교기 등과 같은 신호처리장치로 출력하며, 상기 외부신호처리장치는 가속도 센서의 출력 신호와 전압 변동 값을 증폭한 후 미리 설정된 기준 값과 비교함으로써 상기한 외력에 대응하는 가속도의 크기를 검출하게 된다.In the conventional MEMS acceleration sensor illustrated in FIG. 1, the upper and lower electrodes transmit electrical signals according to a change in resistance value generated when the mass 11 of the central substrate 10 vibrates in proportion to the acceleration of an external force. Outputs to a signal processing device such as an external amplifier or comparator via the 20a and 20b, the upper and lower substrates 40a and 40b, and the upper and lower external terminal pads 50a and 50b. The amplitude of the acceleration corresponding to the external force is detected by amplifying the output signal of the acceleration sensor and the voltage fluctuation value and then comparing it with a preset reference value.
상기 멤스(MEMS) 가속도 센서에서 검출한 가속도 신호를 외부로 전달하기 위해서는 별도의 신호처리장치를 필요로 하는데, 종래에는 이러한 신호처리장치를 주문형반도체(Application Specific Integrated Circuit : ASIC)로 제작하여 상기 멤스(MEMS) 가속도 센서에 와이어 본딩으로 결합하였다.In order to transfer the acceleration signal detected by the MEMS acceleration sensor to the outside, a separate signal processing device is required. Conventionally, such a signal processing device is manufactured as an application specific integrated circuit (ASIC) and the MEMS (MEMS) was coupled by wire bonding to the acceleration sensor.
도 2는 종래 기술에 따라 패키징된 멤스(MEMS) 가속도 센서를 나타내는 도면이다.2 is a view showing a MEMS acceleration sensor packaged according to the prior art.
도 2를 참조하면 멤스(MEMS) 가속도 센서의 가속도 신호를 처리하기 위한 주문형반도체(ASIC)가 상기 멤스(MEMS) 가속도 센서에 와이어 본딩되어 있음을 알 수 있다. 이후 상기 멤스(MEMS) 가속도 센서와 상기 주문형반도체(ASIC)는 일체로 패키징된다.Referring to FIG. 2, it can be seen that a custom semiconductor ASIC for processing an acceleration signal of a MEMS acceleration sensor is wire-bonded to the MEMS acceleration sensor. Afterwards, the MEMS acceleration sensor and the ASIC are packaged integrally.
이러한 멤스(MEMS) 가속도 센서를 CMOS 이미지 센서와 함께 사용하는 경우, 종래에는 상기 멤스(MEMS) 가속도 센서와 주문형반도체(ASIC)를 와이어본딩한 후 패키징하여 멤스(MEMS) 구조물을 형성하고, CMOS 이미지 센서 칩을 별도로 패키징 한 후 이들을 결합하였다.When the MEMS acceleration sensor is used together with a CMOS image sensor, a MEMS structure is formed by wire-bonding and packaging the MEMS acceleration sensor and a custom semiconductor (ASIC), and a CMOS image is formed. The sensor chips were packaged separately and then combined.
이러한 종래의 구조에 의하면 멤스(MEMS) 가속도 센서의 신호처리를 위한 주문형반도체(ASIC)를 별도로 필요로 하므로 공정이 복잡하고 비용이 고가이며, 또한 멤스(MEMS) 가속도 센서 및 CMOS 이미지 센서 칩을 별도로 패키징 해야 하는 문제가 있었다.According to the conventional structure, a separate semiconductor (ASIC) for signal processing of the MEMS acceleration sensor is required, which is complicated and expensive, and separates the MEMS acceleration sensor and the CMOS image sensor chip separately. There was a problem with packaging.
한편, 종래로부터 멤스(MEMS) 소자와 CMOS 회로를 동일 칩에 집적하여 일체화하는 공정 기술에 대한 연구가 진행되어왔다. 그러나 멤스(MEMS) 소자의 경우 수율이 낮으므로 멤스(MEMS) 소자와 CMOS 회로를 동일 칩에 배치하는 경우 칩의 수율은 멤스(MEMS) 소자의 수율에 의해 결정되어 전체적인 수율이 낮아지는 문제가 있었다.On the other hand, research has been conducted on a process technology for integrating a MEMS device and a CMOS circuit on the same chip. However, in the case of MEMS devices, the yield is low. Therefore, when the MEMS device and the CMOS circuit are arranged on the same chip, the yield of the chip is determined by the yield of the MEMS device, thereby lowering the overall yield. .
본 발명이 해결하고자 하는 기술적 과제는 멤스(MEMS) 가속도 센서에서 검출한 신호를 처리하기 위한 신호처리블록을 주문형반도체(ASIC)로 별도로 제작하지 않고 CMOS 공정을 통해 CMOS 이미지 센서에 내장 시킴으로써, 손 떨림에 의한 이미지 오차의 보정이 가능하고, 주문형반도체(ASIC)를 위한 별도의 패키지를 필요로 하지 않는 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 CMOS 이미지 센서 및 그 제조방법을 제공하는데 있다.The technical problem to be solved by the present invention is to build a signal processing block for processing the signal detected by the MEMS acceleration sensor to the CMOS image sensor through a CMOS process, without separately manufacturing a custom-made semiconductor (ASIC), hand shake The present invention provides a CMOS image sensor having a signal processing block of a MEMS acceleration sensor capable of correcting an image error due to the present invention and not requiring a separate package for an ASIC.
상기 기술적 과제를 이루기 위한 본 발명에 따른 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 CMOS 이미지 센서는 광을 받아들여 전기 신호로 변환 시키는 이미지 센서부; 및 멤스(MEMS) 가속도 센서에서 검출된 신호를 처리하여 전기적 신호로 변환하여 상기 이미지 센서부에 전달하는 신호처리블록;을 구비하는 것을 특징으로 한다.According to an aspect of the present invention, there is provided a CMOS image sensor including a signal processing block of a MEMS acceleration sensor, the image sensor unit converting light into an electrical signal; And a signal processing block for processing the signal detected by the MEMS acceleration sensor, converting the signal into an electrical signal, and transferring the signal to the image sensor unit.
또한 상기 기술적 과제를 이루기 위한 본 발명에 따른 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 CMOS 이미지 센서의 제조방법은 CMOS 이미지센서의 내부에 멤스(MEMS) 가속도 센서의 가속도 신호를 처리하기 위한 신호처리블록을 CMOS 공정을 이용하여 형성하는 것을 특징으로 한다.In addition, a method of manufacturing a CMOS image sensor having a signal processing block of a MEMS acceleration sensor according to the present invention for achieving the above technical problem is for processing the acceleration signal of the MEMS acceleration sensor in the CMOS image sensor. The signal processing block is formed using a CMOS process.
본 발명에 따른 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 CMOS 이미지 센서 및 그 제조방법에 의하면 멤스(MEMS) 가속도 센서와는 별개로, 멤스(MEMS) 가속도 센서의 가속도 신호를 처리하는 신호처리블록을 CMOS 이미지 센서에 내장함으로써 멤스(MEMS) 가속도 센서에서 검출된 가속도 신호를 이용하여 손 떨림에 의한 이미지 오차의 보정이 가능한 장점이 있다. According to the CMOS image sensor having a signal processing block of the MEMS acceleration sensor according to the present invention and a method for manufacturing the same, a signal for processing an acceleration signal of the MEMS acceleration sensor is separately from the MEMS acceleration sensor. By incorporating the processing block into the CMOS image sensor, it is possible to correct an image error due to hand shake using the acceleration signal detected by the MEMS acceleration sensor.
또한 신호처리블록에 대한 별도의 패키징을 필요로 하지 않으므로 공정을 단순화하고 비용을 절감할 수 있는 효과가 있다.In addition, since there is no need for separate packaging of the signal processing block, the process can be simplified and the cost can be reduced.
도 1은 종래의 멤스(MEMS) 가속도 센서를 나타내는 도면이다.1 is a view showing a conventional MEMS acceleration sensor.
도 2는 종래 기술에 따라 패키징된 멤스(MEMS) 가속도 센서를 나타내는 도면이다.2 is a view showing a MEMS acceleration sensor packaged according to the prior art.
도 3은 본 발명에 따른 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 CMOS 이미지 센서의 구성을 나타내는 도면이다.3 is a diagram illustrating a configuration of a CMOS image sensor including a signal processing block of a MEMS acceleration sensor according to the present invention.
이하에서는 본 발명의 구체적인 실시 예를 첨부된 도면을 참조하여 상세히 설명하도록 한다.Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 3은 본 발명에 따른 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 CMOS 이미지 센서의 구성을 나타내는 도면이다.3 is a diagram illustrating a configuration of a CMOS image sensor including a signal processing block of a MEMS acceleration sensor according to the present invention.
도 3을 참조하면 본 발명에 따른 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 CMOS 이미지 센서(300)는 이미지 센서부(310) 및 MEMS 가속도 센서(330)의 신호를 처리하기 위한 신호처리블록(320)을 구비한다.Referring to FIG. 3, a CMOS image sensor 300 including a signal processing block of a MEMS acceleration sensor according to the present invention is used to process signals for processing signals from the image sensor 310 and the MEMS acceleration sensor 330. Block 320 is provided.
이미지 센서부(310)는 외부에서 입사되는 광을 받아들여 전기 신호로 변환하여 외부로 내보낸다. 즉, 빛에 의해 발생한 전자를 각 화소 내에서 전압으로 변환한 후에 여러 CMOS 스위치를 통해 외부로 출력한다. The image sensor 310 receives light incident from the outside, converts the light into an electrical signal, and sends the light out to the outside. That is, electrons generated by light are converted into voltages in each pixel and then output to the outside through various CMOS switches.
상기 신호처리블록(320)은 멤스(MEMS) 가속도 센서(330)에서 검출된 가속도 신호를 처리하여 전기적 신호로 변환하여 상기 이미지 센서부에 전달한다. 이때 상기 이미지 센서부(310)에서는 상기 신호처리블록(320)에서 전달된 가속도 신호를 이용하여 사용자의 움직임이나 손 떨림에 의해 발생하는 이미지 오차를 보정하는 것을 가능하다.The signal processing block 320 processes the acceleration signal detected by the MEMS acceleration sensor 330, converts the acceleration signal into an electrical signal, and transmits the converted electrical signal to the image sensor unit. In this case, the image sensor unit 310 may correct an image error caused by a user's movement or hand shake using the acceleration signal transmitted from the signal processing block 320.
즉, CMOS 이미지 센서의 사용자가 교통수단을 통해 이동 중 이거나 촬영 중 손 떨림이 있는 경우와 같이 속도의 변화가 감지되는 경우에 이미지 센서부에서 이러한 가속도 신호를 감지하여 이미지를 보정할 수 있도록 가속도 신호를 전기적 신호로 변환하여 전달한다. In other words, when a change in speed is detected, such as when a user of a CMOS image sensor is moving through a vehicle or there is a hand shake during shooting, an acceleration signal may be detected by the image sensor unit to correct an image by detecting the acceleration signal. It converts into electrical signals and delivers them.
이때 상기 신호처리블록(320)은 멤스(MEMS) 가속도 센서(330)와는 별도로 CMOS 이미지 센서(300)의 내부에 CMOS 공정을 통해 형성된다.In this case, the signal processing block 320 is formed in the CMOS image sensor 300 through a CMOS process separately from the MEMS acceleration sensor 330.
즉, 멤스(MEMS) 가속도 센서(330)에서 검출된 신호를 처리하여 전기적 신호로 변환하여 상기 이미지 센서부에 전달하는 신호처리블록(320)을 주문형반도체(ASIC)로 별도로 제작한 후 이를 멤스(MEMS) 가속도 센서(330)에 와이어링(wiring) 하는 것이 아니라 CMOS 이미지 센서 자체의 리드아웃 회로(read out circuit) 등의 신호처리부(signal process unit)에 주문형반도체(ASIC)의 형태로 직접 형성한다.That is, after the signal processing block 320 for processing the signal detected by the MEMS acceleration sensor 330 is converted into an electrical signal and transmitted to the image sensor unit, separately manufactured by a custom-made semiconductor (ASIC) and then the MEMS ( MEMS) is not directly wired to the acceleration sensor 330, but is directly formed in a signal processing unit such as a read out circuit of the CMOS image sensor itself in the form of an application-specific semiconductor (ASIC). .
상기 CMOS 이미지 센서(300)의 내부에 형성된 상기 신호처리블록(320)은 상기 멤스(MEMS) 가속도 센서(330)와 와이어본딩(wire bonding) 되어 연결된다. 또한 상기 CMOS 이미지 센서(300)와 상기 멤스(MEMS) 가속도 센서(330)는 하나의 인쇄회로기판(PCB, 340)에 패키징 될 수 있다.The signal processing block 320 formed inside the CMOS image sensor 300 is connected by wire bonding with the MEMS acceleration sensor 330. In addition, the CMOS image sensor 300 and the MEMS acceleration sensor 330 may be packaged on one printed circuit board (PCB) 340.
이러한 구조를 가짐으로써 멤스(MEMS) 가속도 센서용 주문형반도체(ASIC)를 별도로 제작할 필요 없이 CMOS 이미지 센서를 제작하는 과정에서 CMOS 공정을 통해 CMOS 이미지 센서의 내부에 신호처리블록을 제작할 수 있으며, 멤스(MEMS) 가속도 센서용 주문형반도체(ASIC)를 위한 별도의 패키지가 필요 없게 된다.With this structure, signal processing blocks can be manufactured inside the CMOS image sensor through the CMOS process in the process of manufacturing the CMOS image sensor without the need to separately manufacture the ASIC for MEMS acceleration sensor. MEMS) eliminates the need for a separate package for ASICs for acceleration sensors.
이때 상기 신호처리블록(320)은 상기 멤스(MEMS) 가속도 센서(330)에서 검출된 가속도 신호를 통해 사용자의 움직임이나 손 떨림의 정도를 파악할 수 있고 이를 전기신호로 변환하여 이미지 센서부(310)에 전달함으로써 상기 이미지 센서부(310)에서 출력되는 이미지를 보정하는 것이 가능하게 된다.At this time, the signal processing block 320 can grasp the degree of the user's movement or hand shake through the acceleration signal detected by the MEMS acceleration sensor 330 and converts it into an electrical signal to the image sensor unit 310. It is possible to correct the image output from the image sensor unit 310 by transmitting to.
이상으로, 본 발명은 도면에 도시된 실시예를 참고로 설명되었으나 이는 예시적인 것에 불과하며, 본 기술 분야의 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 따라서, 본 발명의 진정한 기술적 보호 범위는 첨부된 등록청구범위의 기술적 사상에 의해 정해져야 할 것이다.As described above, the present invention has been described with reference to the embodiments illustrated in the drawings, which are merely exemplary, and it should be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. will be. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

Claims (6)

  1. CMOS 이미지 센서에 있어서,CMOS image sensor,
    광을 받아들여 전기 신호로 변환 시키는 이미지 센서부; 및An image sensor unit which receives light and converts the light into an electrical signal; And
    멤스(MEMS) 가속도 센서에서 검출된 가속도 신호를 처리하여 전기적 신호로 변환하여 상기 이미지 센서부에 전달하는 신호처리블록;을 포함하는 것을 특징으로 하는 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 CMOS 이미지 센서.And a signal processing block for processing an acceleration signal detected by a MEMS acceleration sensor, converting the signal into an electrical signal, and transmitting the converted signal to the image sensor unit. CMOS image sensor.
  2. 제1항에 있어서, 상기 이미지센서부는,The method of claim 1, wherein the image sensor unit,
    상기 신호처리블록에서 전달된 가속도 신호를 이용하여 사용자의 움직임이나 손 떨림에 의해 발생하는 이미지 오차를 보정하는 것을 특징으로 하는 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 CMOS 이미지 센서.CMOS image sensor having a signal processing block of the MEMS acceleration sensor, characterized in that for correcting the image error caused by the user's movement or hand shake using the acceleration signal transmitted from the signal processing block.
  3. 제1항 또는 제2항에 있어서, 상기 신호처리블록은,The method according to claim 1 or 2, wherein the signal processing block,
    CMOS 공정을 통하여 형성된 것을 특징으로 하는 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 CMOS 이미지 센서.CMOS image sensor having a signal processing block of the MEMS acceleration sensor, characterized in that formed through a CMOS process.
  4. 제3항에 있어서, 상기 신호처리블록은,The method of claim 3, wherein the signal processing block,
    상기 멤스(MEMS) 가속도 센서와 와이어 본딩되어 연결되는 것을 특징으로 하는 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 CMOS 이미지 센서.And a signal processing block of the MEMS acceleration sensor, wherein the MEMS acceleration sensor is wire-bonded to and connected to the MEMS acceleration sensor.
  5. 제4항에 있어서, The method of claim 4, wherein
    상기 CMOS 이미지 센서와 상기 멤스(MEMS) 가속도 센서는 하나의 인쇄회로기판에 패키징 되는 것을 특징으로 하는 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 CMOS 이미지 센서.And the CMOS image sensor and the MEMS acceleration sensor are packaged on a single printed circuit board. 10. The CMOS image sensor having a signal processing block of the MEMS acceleration sensor.
  6. CMOS 이미지센서의 내부에 멤스(MEMS) 가속도 센서의 가속도 신호를 처리하기 위한 신호처리블록을 CMOS 공정을 이용하여 형성하는 것을 특징으로 하는 멤스(MEMS) 가속도 센서의 신호처리블록을 구비한 CMOS 이미지 센서의 제조방법.CMOS image sensor having a signal processing block of MEMS acceleration sensor, characterized in that the signal processing block for processing the acceleration signal of the MEMS acceleration sensor in the CMOS image sensor by using a CMOS process Manufacturing method.
PCT/KR2009/003592 2008-07-22 2009-07-01 Cmos image sensor having a signal processing block of an mems acceleration sensor and manufacturing method thereof WO2010011033A2 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100323483B1 (en) * 1998-03-12 2002-02-07 미다라이 후지오 Image sensor
KR100651041B1 (en) * 2003-08-12 2006-11-29 후지 샤신 필름 가부시기가이샤 Digital camera and solid state imaging device
KR100772321B1 (en) * 2006-06-14 2007-10-31 매그나칩 반도체 유한회사 Package of mems device and method for manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100323483B1 (en) * 1998-03-12 2002-02-07 미다라이 후지오 Image sensor
KR100651041B1 (en) * 2003-08-12 2006-11-29 후지 샤신 필름 가부시기가이샤 Digital camera and solid state imaging device
KR100772321B1 (en) * 2006-06-14 2007-10-31 매그나칩 반도체 유한회사 Package of mems device and method for manufacturing the same

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