WO2009154156A1 - Patterning method, device manufacturing method using the patterning method, and device - Google Patents
Patterning method, device manufacturing method using the patterning method, and device Download PDFInfo
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- WO2009154156A1 WO2009154156A1 PCT/JP2009/060824 JP2009060824W WO2009154156A1 WO 2009154156 A1 WO2009154156 A1 WO 2009154156A1 JP 2009060824 W JP2009060824 W JP 2009060824W WO 2009154156 A1 WO2009154156 A1 WO 2009154156A1
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- transfer
- light
- transfer material
- layer
- partition pattern
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/382—Contact thermal transfer or sublimation processes
- B41M5/38207—Contact thermal transfer or sublimation processes characterised by aspects not provided for in groups B41M5/385 - B41M5/395
- B41M5/38214—Structural details, e.g. multilayer systems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
- B41M5/46—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography characterised by the light-to-heat converting means; characterised by the heat or radiation filtering or absorbing means or layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M2205/00—Printing methods or features related to printing methods; Location or type of the layers
- B41M2205/38—Intermediate layers; Layers between substrate and imaging layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
Definitions
- the present invention relates to a method for patterning a thin film constituting a device such as an organic EL element, an organic TFT, a photoelectric conversion element, and various sensors, and a device manufacturing method using the patterning method.
- An organic EL element is one in which electrons injected from a cathode and holes injected from an anode are recombined in an organic light emitting layer sandwiched between both electrodes.
- Kodak's C.I. W. Since Tang et al. Have shown that organic EL devices emit light with high brightness (see Non-Patent Document 1), many research institutions have studied.
- This light-emitting element is thin and has high luminance light emission under a low driving voltage, and various organic materials are used for the light-emitting layer, so that the three primary colors of red (R), green (G), and blue (B) are used. Therefore, practical use as a color display is progressing.
- the active matrix type color display shown in FIG. 1 requires a technique for patterning at least the light emitting layers 17R, 17G, and 17B with high precision so as to correspond to the R, G, and B subpixels constituting the pixel.
- a multilayer structure is necessary, and a typical film thickness is 0.1 ⁇ m or less, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, It is necessary to sequentially stack an electron injection layer and the like.
- wet processes such as a photolithography method, an inkjet method, and a printing method have been used for fine patterning of a thin film.
- wet processes such as a photolithography method, an inkjet method, and a printing method have been used for fine patterning of a thin film.
- wet processes such as a photolithography method, an inkjet method, and a printing method have been used for fine patterning of a thin film.
- the materials that can be used are limited.
- the organic EL material on the donor film is patterned in advance, and the entire donor film is heated while the device substrate and the organic EL material on the donor film are in close contact with each other.
- a method for transferring an organic EL material to a device substrate is disclosed (see Patent Document 1). Further, the organic EL material patterned in the partition pattern (partition wall) is opposed to the device substrate so as not to contact the device substrate, and the donor substrate is heated by a hot plate to evaporate the organic EL material and deposit it on the device substrate.
- a transfer method is disclosed (see Patent Document 2).
- a photothermal conversion layer is formed on the donor substrate, an organic EL material is formed on the entire surface by thermal evaporation, and the photothermal conversion layer is partially irradiated with a high-intensity laser.
- a selective transfer system has been developed that uses the heat generated by the process to transfer a part of the organic EL material formed on the entire surface or separately coated with R, G, and B without using a partition pattern to the device substrate. (See Patent Documents 3 to 4). However, since the generated heat is also diffused in the lateral direction, the organic EL material in a region wider than the laser irradiation range is transferred, and the boundary is not clear.
- a direct heating transfer method is disclosed in which the organic EL material on the donor substrate is directly heated with a laser without forming a photothermal conversion layer on the donor substrate (patent).
- Patent Document 5 the possibility of color mixing at the time of patterning is further reduced by separately coating R, G, and B with partition patterns.
- the typical film thickness of the organic EL material is very thin at 25 nm, there is a problem that the laser reaches the device substrate without being sufficiently absorbed and heats the underlying layer on the device substrate.
- a high-intensity laser is required to perform sufficient transfer by heating the organic EL material to a temperature above the sublimation temperature, but the partition pattern deteriorates when the partition pattern is irradiated with laser. Requires high-precision alignment so that only the organic EL material is irradiated with a laser, and it is difficult to increase the size.
- a photothermal conversion layer is formed on the donor substrate, and organic EL materials of R, G, and B are separately applied thereon, and the photothermal conversion layer is irradiated with a laser to perform batch transfer, whereby the heat of the donor substrate is obtained.
- a method for preventing displacement due to expansion is also disclosed (see Patent Document 6).
- the partition pattern is not formed on the donor substrate, when the R, G, and B are applied in a solution state, they are mixed with the adjacent material, or the solvent vapor during drying re-dissolves the adjacent material. In other words, it is difficult to coat the organic EL material with high accuracy.
- the present invention solves such a problem and provides a patterning method that enables large-scale and high-precision fine patterning without degrading characteristics of a thin film including an organic EL material, and a device using such a patterning method. It is an object to provide a manufacturing method as well as a device.
- the present invention has been made by earnestly researching so as to solve the conventional problems even when a laser transfer method is used using a donor substrate having a partition pattern that may have adverse effects such as degassing. It is.
- a photothermal conversion layer and a partition pattern are formed on a substrate, a donor substrate in which a transfer material is present in the partition pattern is disposed to face a device substrate, and at least a part of the transfer material
- the patterning method is characterized in that the transfer material is transferred to a device substrate by irradiating the photothermal conversion layer with light so that at least a part of the partition pattern is heated simultaneously.
- the present invention brings about a remarkable effect of enabling large-scale and high-precision fine patterning without damaging a thin film including an organic EL material.
- Sectional drawing which shows an example of the organic EL element by which the light emitting layer was patterned by this invention.
- Sectional drawing which shows an example of the light emitting layer patterning method of the organic EL element by this invention.
- the top view which shows an example of the light irradiation method in FIG. Sectional drawing explaining the problem in the conventional light irradiation arrangement
- the top view explaining the problem in the conventional donor substrate.
- Sectional drawing which shows an example of the patterning method by this invention.
- Sectional drawing which shows another example of the patterning method by this invention.
- Sectional drawing which shows an example of the patterning method of the batch transfer by this invention.
- the perspective view which shows another example of the light irradiation method in this invention.
- the perspective view which shows another example of the light irradiation method in this invention The perspective view which shows another example of the light irradiation method in this invention.
- the perspective view which shows another example of the light irradiation method in this invention Sectional drawing which shows an example of the overlap light irradiation method in this invention. Sectional drawing which shows another example of the patterning method of the batch transfer by this invention.
- the perspective view which shows another example of the light irradiation method in this invention The perspective view which shows another example of the light irradiation method in this invention.
- the conceptual diagram explaining the time change of the light intensity distribution and transfer material temperature in this invention The perspective view which shows an example of the shaping
- FIGS. 2 and 3 are a cross-sectional view and a plan view showing an example of the thin film patterning method of the present invention. It should be noted that many figures used in this specification are described by extracting the minimum unit of RGB sub-pixels constituting a large number of pixels in a color display. In order to help understanding, the magnification in the vertical direction (substrate vertical direction) is increased as compared with the horizontal direction (substrate in-plane direction).
- the donor substrate 30 includes a support 31, a photothermal conversion layer 33, a partition pattern 34, and a transfer material 37 (coating film of RGB light emitting materials of organic EL) present in the partition pattern.
- the organic EL element (device substrate) 10 includes a support 11, a TFT (including extraction electrode) 12 formed thereon, a planarization film 13, an insulating layer 14, a first electrode 15, and a hole transport layer 16.
- substrate is not limited to these as mentioned later.
- a laser is incident from the support 31 side of the donor substrate 30 and absorbed by the light-to-heat conversion layer 33, and the transfer materials 37R, 37G, and 37B are simultaneously heated and evaporated by the heat generated there, and they are transported by holes of the device substrate 10.
- the light emitting layers 17R, 17G, and 17B are collectively transferred and formed.
- Laser irradiation is performed so that the entire region of the partition pattern 34 sandwiched between the transfer materials 37R, 37G, and 37B and a partial region of the partition pattern 34 positioned outside the transfer materials 37R and 37B are heated simultaneously with the transfer material 37.
- the partition pattern which is a foreign substance other than the transfer material on the donor substrate may cause the partition pattern itself to be peeled off and transferred, or impurities may be mixed into the transfer material from the partition pattern.
- a transfer material is heated to a relatively high temperature, such as a vapor deposition transfer method in which a photothermal conversion layer is installed on a donor substrate to absorb light and the transfer material is transferred by generated heat. Irradiating light so as to positively heat the partition pattern has been unprecedented as it is likely to deteriorate the performance of the device.
- the present invention enables high-definition patterning for the first time by irradiating light on the donor substrate on which the photothermal conversion layer is installed so as to heat the partition pattern simultaneously with the transfer material. That is, according to such an irradiation method, the temperature drop at the boundary between the partition pattern and the transfer material as shown in FIG. 4 is suppressed, so that the transfer material existing at the boundary can be sufficiently heated and transferred. it can. Therefore, since the film thickness distribution of the transfer thin film is made more uniform than before, adverse effects on device performance can be prevented. It was also found that the intensity of light used in the present invention can be reduced. For this reason, even when light is applied so that the transfer material and the partition pattern are heated at the same time, adverse effects on device performance due to separation of the partition pattern and degassing of the partition pattern can be minimized. .
- the thickness of the partition pattern when the thickness of the partition pattern is made larger than the thickness of the transfer material, the temperature of the portion of the partition pattern that is thicker than the transfer material does not increase so much. Therefore, the device substrate is not heated to a high temperature through the partition pattern, there is almost no influence of degassing from the partition pattern, and the device performance is not deteriorated.
- different transfer materials that are separated by a partition pattern are simultaneously irradiated with light so as to straddle the partition pattern, so that different transfer materials can be batched.
- the RGB light emitting layers in the organic EL display shown in FIG. 1 are patterned according to the present invention, the RGB light emitting layers can be transferred together as a set, so that the RGB light emitting layers are sequentially irradiated with light.
- the patterning time can be shortened as compared with the conventional method that had to be performed. Since light is sufficiently absorbed by the light-to-heat conversion layer, RGB light-emitting layers having different light absorption spectra can be heated to the same temperature using the same light source, and the device substrate is heated by the transmitted light. There is no worry.
- FIG. 3 is a schematic view of the state of laser irradiation in FIG. 2 as viewed from the support 31 side of the donor substrate 30. Since the photothermal conversion layer 33 is formed on the entire surface, the partition pattern 34 and the transfer materials 37R, 37G, and 37B are not actually visible from the support 31 (glass plate) side, but the positional relationship with the laser will be described. Therefore, it is shown by a dotted line.
- the laser beam has a rectangular shape, is irradiated so as to straddle the transfer materials 37R, 37G, and 37B, and is scanned in a direction perpendicular to the arrangement of the transfer materials 37R, 37G, and 37B. The laser beam only needs to be scanned relatively, and the laser may be moved, the set of the donor substrate 30 and the device substrate 20 may be moved, or both.
- FIG. 6 is a cross-sectional view showing an example of a method of irradiating light to a donor substrate in the present invention.
- the donor substrate 30 is composed of a support 31, a photothermal conversion layer 33, a partition pattern 34, and one type of transfer material 37 existing in the partition pattern, and the transfer substrate 20 is composed only of the support 21. .
- light represented by a laser is incident from the support 31 side of the donor substrate 30, and at least a part of the transfer material 37 and at least a part of the partition pattern 34 are formed.
- the light-to-heat conversion layer 33 is irradiated with light so as to be simultaneously heated.
- FIG. 6B schematically shows a process in which the transfer material 37 is heated and evaporated to be deposited on the support 21 of the transfer substrate 20 as the transfer film 27.
- the light irradiation can be stopped (the light irradiation of the portion is terminated by the movement of the light irradiation portion), and the light irradiation is continued as it is to transfer the entire right side portion of the transfer material 37.
- the left part can also be transferred.
- an ablation mode in which the transfer material 37 reaches the support 21 of the transfer substrate 20 while maintaining the film shape can be used.
- FIG. 6C irradiates the photothermal conversion layer 33 with light wider than the width of the transfer material 37 so that the entire width of the transfer material 37 and a part of the width of the partition pattern 34 are simultaneously heated.
- One of the preferable aspects of this invention is shown. According to this arrangement, the desired pattern of the transfer film 27 can be efficiently obtained by one transfer. Alternatively, the load on the transfer material 37 can be further reduced by transferring half the film thickness of the transfer material 37 by the first light irradiation and transferring the other half by the second light irradiation.
- the transfer material 37 is transferred in a plurality of times in the film thickness direction by irradiating light to the photothermal conversion layer 33 in a plurality of times on one donor substrate 30.
- This is a transfer method.
- the maximum temperature of not only the transfer material 37 but also the partition pattern 34 and the underlying layer formed on the device substrate 20 can be lowered, so that damage to the donor substrate and device performance can be prevented.
- the number n is not limited. However, if the amount is too small, the above-mentioned effect under low temperature is not sufficiently exhibited. The range of is preferable.
- the number of divisions n is 15 times.
- the range of 30 times or more is particularly preferable.
- the transfer materials 37R, 37G, and 37B have temperature characteristics with different evaporation rates. Therefore, for example, as shown in FIG. 2, when the wide uniform light is irradiated, the entire thickness of the transfer material 37B is transferred by the first irradiation, but each of 37R and 37G has only a half film thickness. May be transcribed. In this case, the remaining transfer of 37R and 37G can be completed by the second irradiation. At this time, the transfer material 37B does not exist on the donor substrate 30 after the first irradiation, but the second irradiation can be performed in the same arrangement as the first irradiation. In the same way, for example, 37R can be transferred 10 times, 37G 7 times, 37B 5 times, and the like. It is also possible to use a donor substrate on which only the transfer material 37B is not formed and only 37R and 37G are formed.
- the transfer material 37R, 37G, and 37B are light emitting materials for an organic EL element
- the transfer material is a mixture of a host material and a dopant material as described later, and they have temperature characteristics with different evaporation rates. Is not uncommon. For example, when the evaporation temperature of the dopant material is lower than that of the host material, a phenomenon in which all of the dopant material evaporates first when heated at a low temperature for a long time is likely to occur. On the other hand, a high temperature heating of a certain level or more makes it possible to use a phenomenon called flash evaporation in which the host material and the dopant material are evaporated at substantially the same ratio.
- the present invention since not only the light irradiation time and the light irradiation intensity but also the number of transfers can be controlled, it is relatively easy to find an appropriate high-speed evaporation condition according to flash evaporation while suppressing material deterioration. Therefore, it is possible to realize a transfer in which the ratio of the host material and the dopant material does not change before and after the transfer.
- the film thickness of the transfer material 37 is transferred to one device substrate by one light irradiation, and the other half is transferred to another device substrate.
- the transfer to the device substrate 20 can also be performed. If the film thickness of the transfer material transferred to each device substrate is adjusted, transfer from one donor substrate to three or more device substrates is also possible.
- the position of the light irradiation is displaced by ⁇ as shown in FIG. 6D, and the entire width of the transfer material 37 and a part of the width of the partition pattern 34 are. Since the heating is not changed at the same time, the uniform transfer film 27 can be obtained in the same manner.
- the uniformity of the transfer film 27 is extremely impaired when the light irradiation position is shifted. Considering the difficulty in aligning the light irradiation with high accuracy over the entire area of the substrate in the upsizing, the method of the present invention significantly reduces the burden on the light irradiation apparatus.
- FIG. 7 is a cross-sectional view showing an example of a method for irradiating a donor substrate with two or more different transfer materials 37 (in this example, three types of 37R, 37G, and 37B) corresponding to the partition pattern 34.
- different transfer materials mean that the materials are different, the mixing ratio of a plurality of materials is different, or the film thickness and purity are different even if the materials are the same.
- only one donor substrate 30 is required for each transfer material, which is conventionally required, and the operation of facing the transfer substrate 20 can be completed only once.
- Three types of different transfer materials can be transferred by light irradiation for each type (only 37G in this example).
- the adjacent transfer material 37R or 37B is thermally diffused in the lateral direction. Some may evaporate. However, they are to be transferred later, and as a result, they are the same as the concept of the divided transfer shown in FIGS. Further, since the partition pattern 34 exists, there is no possibility that a mixture of the adjacent transfer materials 37R and 37G is formed as the transfer film 27G as shown in FIG.
- FIG. 8 shows the width of each of two or more different transfer materials 37 (in this example, three types 37R, 37G, and 37B) and the partition pattern 34 (in this example, a partition pattern sandwiched between 37R and 37G, 37G and 37B).
- the partition pattern 34 in this example, a partition pattern sandwiched between 37R and 37G, 37G and 37B.
- transfer materials 37R, 37G When the set of 37B is repeatedly formed k times in the x direction and h times in the vertical y direction, for example, m sets (m is a number of 2 to k) of transfer materials 37R, 37G, By scanning light in the y direction while simultaneously irradiating light to 37B, the transfer time can be shortened to about 1 / m.
- the entire transfer material is collectively transferred in one scan by irradiating light that covers the entire width of the transfer region 38 of the donor substrate 30. You can also With this arrangement, alignment of light irradiation with respect to the donor substrate 30 can be greatly reduced.
- FIG. 9B when there are a plurality of transfer regions 38 on the substrate, they can be transferred collectively. As is called a delta arrangement, even when the RGB sub-pixels are not arranged in a straight line, the irradiation light can be scanned in a straight line, so that the transfer can be easily performed.
- a plurality of lights can be overlapped as shown in FIG.
- the light may irradiate the entire transfer region, and the width of irradiation light, the order of irradiation, the degree of overlap, and the like can be selected optimally from various transfer conditions.
- a temperature gradient is inevitably generated at the light boundary position, and the influence varies little by little depending on the type of the transfer material layer 37.
- two or more types of transfer films 17 having different uneven states are generated, and it is difficult to suppress them simultaneously.
- the influence of the temperature gradient is limited to a specific transfer film, it is possible to select a transfer material layer that is less likely to cause unevenness, and further to select light irradiation conditions that minimize the unevenness. It becomes possible to suppress to the minimum.
- the method for selecting a specific transfer material layer is not particularly limited.
- the transfer material layer 37 has the lowest (or highest) transfer temperature, the highest thermal decomposition temperature (or lowest), or the film thickness so that unevenness is minimized in the finally obtained device. May be selected according to the purpose, such as the thinnest (or thickest).
- the composition ratio of the host material and the dopant material particularly affects the light emission performance. According to the above method, the composition of the transfer film 17 is affected by the temperature gradient at the overlap position. The ratio at which the ratio changes can be minimized to suppress unevenness in the transfer film 17 and maintain good light emission characteristics.
- the light is overlapped at the position of the transfer material layer 37 of the transfer material made of the one type of material. It is preferable. In this case, since there is no need to consider the change in the composition ratio in this transfer material layer, the influence of the temperature gradient at the overlap position becomes extremely small.
- FIG. 14 shows another example of batch transfer according to the present invention.
- the transfer materials 37R and 37G are irradiated with light having a width corresponding to the sum of the width of the transfer material 37G and the width of the partition pattern 34 so as to straddle the transfer materials 37R and 37G. A part of each is transferred at once.
- the transfer of all the transfer materials 37R, 37G, and 37B is finally completed. In this method, it is not necessary to strictly control the positional relationship between the irradiation light and the donor substrate.
- the irradiation light can be scanned linearly.
- the great effect of the batch transfer is that, as already described, it is not necessary to control the light irradiation position as strictly as in the conventional method.
- the conventional method cannot neglect a minute optical path change caused by a transparent window that separates the atmosphere and the vacuum.
- the above optical path change can be ignored, so that not only the light irradiation apparatus but also the entire mechanism of the transfer process apparatus can be simplified.
- the batch transfer has another effect.
- the lateral thermal diffusion that has become a problem in laser transfer does not occur, so it is possible to irradiate light for a relatively long time, such as by scanning the laser at a relatively low speed. It becomes possible. Therefore, the maximum temperature of the transfer material can be controlled more easily, and high-precision patterning can be performed without damaging the transfer material during transfer, so that deterioration in device performance can be minimized.
- the reduction of the damage to the transfer material means that the damage to the partition pattern is also reduced at the same time, and even if the partition pattern is formed of an organic material, the deterioration hardly occurs. Therefore, the donor substrate can be reused a plurality of times, and the cost for patterning can be reduced.
- scanning can be performed in the x direction of the arrangement of the transfer materials 37R, 37G, and 37B.
- the scanning speed and light intensity need not be constant.
- the scanning speed and light intensity are set so that the conditions are optimal for the evaporation temperatures of the transfer materials 37R, 37G, and 37B. It can also be modulated during the scan.
- the scanning direction is preferably a direction along the partition pattern 34 in the x direction or the y direction, but is not particularly limited, and scanning in an oblique direction is also possible.
- the scanning speed is not particularly limited, but a range of 0.01 to 2 m / s is generally preferably used.
- the scanning speed is preferably 0.6 m / s or less, more preferably 0.3 m / s or less.
- the scan speed is relatively high, 0.3 m / s or more in order to reduce the amount of input heat per scan. It is preferable that
- a laser that can easily obtain high intensity and excellent in shape control of irradiation light can be exemplified as a preferable light source.
- a light source such as an infrared lamp, a tungsten lamp, a halogen lamp, a xenon lamp, or a flash lamp is used.
- You can also As the laser a known laser such as a semiconductor laser, a fiber laser, a YAG laser, an argon ion laser, a nitrogen laser, or an excimer laser can be used. Since one of the objects in the present invention is to reduce damage to the transfer material, the continuous wave mode (CW) laser is more suitable than the intermittent oscillation mode (pulse) laser irradiated with high intensity light in a short time. Is preferred.
- the wavelength of the irradiation light is not particularly limited as long as the absorption in the irradiation atmosphere and the support of the donor substrate is small, and the light is efficiently absorbed in the photothermal conversion layer. Therefore, not only visible light region but also ultraviolet light to infrared light can be used.
- a preferable wavelength region is 300 nm to 5 ⁇ m, and a more preferable wavelength region is 380 nm to 2 ⁇ m.
- the shape of the irradiation light is not limited to the rectangle exemplified above.
- the optimum shape can be selected according to the transfer conditions such as linear, elliptical, square, polygonal.
- Irradiation light may be formed by superposition from a plurality of light sources, or conversely, a single light source may be divided into a plurality of irradiation lights.
- each irradiation time (heating time) to the transfer materials 37R, 37G, and 37B is adjusted by scanning light having a stepwise width in the scanning direction, and each of the transfer materials 37R, 37G, and 37B is adjusted. Batch transfer optimized for the evaporation temperature can be performed.
- irradiation energy density (irradiation intensity ⁇ irradiation time) constant by modulating the width in the scanning direction of the light corresponding to the unevenness of the irradiation light intensity.
- scanning in the y direction may be performed in an arrangement in which rectangular light is irradiated obliquely.
- step irradiation may be used in which light that partially covers the transfer region 38 of the donor substrate 30 is irradiated and then an unirradiated portion is irradiated. Also in this case, since the positions before and after the irradiation light may be overlapped, the alignment of the light irradiation can be greatly reduced.
- the preferable range of irradiation intensity and heating temperature of the transfer material are uniformity of irradiation light, irradiation time (scanning speed), donor substrate support and photothermal conversion layer material and thickness, reflectivity, partition pattern material and shape It is affected by various conditions such as the material and thickness of the transfer material.
- the energy density absorbed in the light-to-heat conversion layer is in the range of 0.01 to 10 J / cm 2 , and it is a guideline that the irradiation conditions are adjusted so that the transfer material is heated in the range of 220 to 400 ° C. .
- FIG. 19 is a conceptual diagram showing the temperature change of the transfer material (or photothermal conversion layer) when light is scanned and irradiated. Since it depends on various conditions, it cannot be generally stated, but as shown in FIG. 19 (a), the temperature gradually increases under the condition where the irradiation intensity is constant, and tends to increase even after reaching the target (evaporation temperature). . Even under these conditions, transfer can be performed without any problem depending on the thickness, heat resistance, and irradiation time of the transfer material. On the other hand, as a preferable irradiation method for further reducing damage to the transfer material, as shown in FIG. 19 (b), the intensity is distributed so that the temperature becomes constant near the target and the period becomes longer.
- the irradiation intensity at a certain point is changed with time using irradiation light.
- the ability to reduce the damage to the transfer material means that the damage to the partition pattern can be reduced at the same time. For example, even when the partition pattern is formed of a photosensitive organic material, the partition pattern does not deteriorate, and the donor substrate is regenerated. The number of uses can be increased. As shown in FIG. 18, when irradiating irradiation light covering a certain range without scanning, the same effect can be obtained by replacing “scanning direction” in FIG. 19 with “irradiation time”. .
- FIG. 20 is a perspective view showing a method of forming irradiation light.
- rectangular irradiation light can be cut out from a circular light beam by the optical mask 41.
- a knife edge or an optical interference pattern may be used.
- the irradiation light can be formed by condensing or expanding the light from the light source 44 by the lens 42 and the mirror 43.
- the irradiation light can be formed into an arbitrary shape.
- the long axis direction of the rectangular irradiation light has a uniform irradiation intensity. However, it can also be designed to have a Gaussian distribution in the minor axis direction.
- FIG. 20 (d) shows an example of realizing the time dependency of the irradiation intensity shown in FIG. 19 (b).
- the irradiation light is condensed obliquely through the lens 42 with respect to the surface of the donor substrate 30. If the near side of the virtual focal plane 45 indicated by the broken line is arranged so as to substantially coincide with the photothermal conversion layer (not shown) of the donor substrate 30, the near side becomes an on-focus condition that coincides with the focal length of the lens 42. Since the density is maximized and the back side is in an off-focus condition that deviates from the focal length, the irradiation density is reduced by blurring of light. When the irradiation light is scanned from the back to the front in such an arrangement, the time dependency of the irradiation intensity conceptually shown in FIG. 19B can be obtained.
- the support of the donor substrate is not particularly limited as long as it has a low light absorption rate and can stably form a photothermal conversion layer, a partition pattern, and a transfer material thereon.
- a resin film As resin materials, polyester, polyethylene, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyacryl, polysulfone, polyethersulfone, polyphenylene sulfide, polyimide, polyamide, poly Examples include benzoxazole, polyepoxy, polypropylene, polyolefin, aramid resin, and silicone resin.
- a glass plate can be mentioned as a preferable support in terms of chemical / thermal stability, dimensional stability, mechanical strength, and transparency. Soda lime glass, alkali-free glass, lead-containing glass, borosilicate glass, aluminosilicate glass, low expansion glass, quartz glass and the like can be selected according to the conditions.
- a glass plate is a particularly preferred support because it is required that gas release from the support is small.
- the heat capacity of the support is preferably sufficiently larger than that of the photothermal conversion layer. Therefore, the thickness of the support is preferably 10 times or more the thickness of the photothermal conversion layer.
- the allowable range depends on the size of the transfer region and the required accuracy of patterning, but cannot be generally shown. For example, when the photothermal conversion layer rises from room temperature by 300 ° C. and the support is heated by the thermal diffusion, When it is desired to suppress the temperature rise of the support itself to 3 ° C.
- the support The thickness of is preferably 100 times or more the thickness of the photothermal conversion layer.
- the thickness of the support is 300 times or more the thickness of the photothermal conversion layer. More preferably it is.
- the thickness of the support is preferably 200 times or more, and more than 600 times the thickness of the light-to-heat conversion layer. Is more preferable. By doing so, even if the size is increased, the amount of dimensional displacement due to thermal expansion is small, and high-precision patterning becomes possible.
- the photothermal conversion layer is not particularly limited as long as it is a material / configuration that efficiently absorbs light to generate heat and is stable against the generated heat.
- a thin film in which carbon black, graphite, titanium black, an organic pigment, metal particles or the like are dispersed in a resin, or an inorganic thin film such as a metal thin film can be used.
- the photothermal conversion layer since the photothermal conversion layer may be heated to about 300 ° C., the photothermal conversion layer is preferably composed of an inorganic thin film having excellent heat resistance.
- metal materials tungsten, tantalum, molybdenum, titanium, chromium, gold, silver, copper, platinum, iron, zinc, aluminum, cobalt, nickel, magnesium, vanadium, zirconium, silicon, carbon, etc. Those laminated thin films can be used.
- An antireflection layer can be formed on the support side of the photothermal conversion layer as necessary. Further, an antireflection layer may be formed on the surface of the support on the light incident side.
- These anti-reflection layers are preferably optical interference thin films that use the difference in refractive index, and simple or mixed thin films such as silicon, silicon oxide, silicon nitride, zinc oxide, magnesium oxide, and titanium oxide, and laminated thin films thereof are used. it can.
- a transfer auxiliary layer can be formed on the transfer material side of the photothermal conversion layer as required.
- An example of the function of the transfer auxiliary layer is a function of preventing the transfer material from being deteriorated by the catalytic effect of the heated photothermal conversion layer, and is an inert inorganic material such as tungsten, tantalum, molybdenum, silicon, oxide, or nitride.
- a thin film can be used.
- Another example of the function of the transfer auxiliary layer is a surface modification function when a transfer material is formed by a coating method, such as the rough surface thin film of the illustrated inert inorganic thin film or the porous film of the metal oxide. Can be used.
- Another example of the function of the transfer auxiliary layer is the uniform heating of the transfer material.
- the transfer auxiliary layer 39 having a spike-like (or porous) structure can be formed from a material such as an excellent metal, and the transfer material 37 can be arranged to be carried in the gap.
- the transfer auxiliary layer having this function may be integrated with the photothermal conversion layer 37 as shown in FIG.
- the thickness of the photothermal conversion layer is preferably thicker than the thickness of the transfer material, and more preferably 5 times or more the thickness of the transfer material.
- the numerical value is preferably 0.02 to 2 ⁇ m, more preferably 0.1 to 1 ⁇ m. Since the photothermal conversion layer preferably absorbs 90% or more, more preferably 95% or more of the irradiation light, it is preferable to design the thickness of the photothermal conversion layer so as to satisfy these conditions.
- the transfer auxiliary layer When forming the transfer auxiliary layer, it is preferable to design the transfer auxiliary layer so that the heat generated in the light-to-heat conversion layer is thin in a range that satisfies the required functions so as not to hinder efficient transfer of the heat to the transfer material. .
- the planar shape of the photothermal conversion layer is not particularly limited as long as it is formed in a portion where the transfer material exists. As exemplified above, it may be formed on the entire surface of the donor substrate.
- the partition pattern when the partition pattern has good adhesion to the support but poor adhesion to the photothermal conversion layer, the partition pattern The light-to-heat conversion layer may be discontinuous in the lower part of the substrate, and may be patterned so that the partition pattern and at least a part of the support are in contact with each other.
- the photothermal conversion layer is patterned, it is not necessary to have the same type of shape as the partition pattern.
- the partition pattern may have a lattice shape and the photothermal conversion layer may have a stripe shape. Since the light-to-heat conversion layer has a high light absorption rate, it is preferable to form a position mark on the donor substrate at an appropriate position inside and outside the transfer region using the light-to-heat conversion layer.
- a known technique such as spin coating, slit coating, vacuum deposition, EB deposition, sputtering, ion plating, or the like can be used.
- a known photolithography method or laser ablation can be used.
- the partition pattern is not particularly limited as long as it is a material / configuration that defines the boundary of the transfer material and is stable with respect to the heat generated in the photothermal conversion layer.
- inorganic substances include oxides and nitrides such as silicon oxide and silicon nitride, glass and ceramics, and examples of organic substances include resins such as polyvinyl, polyimide, polybenzoxazole, polystyrene, acrylic, novolac, and silicone.
- the glass paste material used for the partition of a plasma television can also be used for the division pattern formation of this invention.
- the thermal conductivity of the partition pattern is not particularly limited, but from the viewpoint of preventing heat from diffusing to the device substrate facing through the partition pattern, it is preferable that the thermal conductivity is as small as an organic substance.
- examples of preferable materials in terms of patterning characteristics and heat resistance include polyimide and polybenzoxazole.
- the method of forming the partition pattern is not particularly limited.
- known techniques such as vacuum deposition, EB deposition, sputtering, ion plating, CVD, and laser ablation are used.
- spin coating Known techniques such as slit coating and dip coating can be used.
- the patterning method of the partition pattern is not particularly limited, and for example, a known photolithography method can be used.
- the partition pattern may be patterned by an etching (or lift-off) method using a photoresist, or patterning is performed by directly exposing and developing the partition pattern using a material obtained by adding photosensitivity to the exemplified resin material.
- a stamp method or an imprint method in which a mold is pressed against the partition pattern layer formed on the entire surface an ink jet method or a nozzle jet method in which a resin material is directly formed by patterning, and various printing methods can be used.
- the shape of the partition pattern is not limited to the lattice structure already exemplified.
- the partition pattern 34 is formed.
- the planar shape may be a stripe extending in the y direction.
- a partition pattern 34 having a width wider than that of the transfer material 37 can be formed.
- three donor substrates 30 on which three kinds of transfer materials 37R, 37G, and 37B are formed are prepared, and the transfer process according to the present invention is performed three times by facing each device substrate. By repeating, the transfer materials 37R, 37G, and 37B can be patterned on one device substrate. This is an example of an effective shape in high-definition patterning that requires a small pitch or gap between the transfer materials 37R, 37G, and 37B.
- the thickness of the partition pattern is not particularly limited. For example, as shown in FIG. 23, even if the partition pattern 34 has the same thickness as the transfer material 37 or is thinner, if the gap between the donor substrate 30 and the device substrate 20 is maintained, the transfer evaporated during transfer Since the material is only slightly spread and deposited, transfer can be performed without causing mixing between the transfer materials 37R, 37G, and 37B. It is preferable that the transfer material is not in direct contact with the transfer surface of the device substrate, and the gap between the transfer material of the donor substrate and the transfer surface of the device substrate is kept in the range of 1 to 100 ⁇ m, more preferably 2 to 20 ⁇ m.
- the thickness of the partition pattern is preferably larger than that of the transfer material, it is preferably 1 to 100 ⁇ m, more preferably 2 to 20 ⁇ m.
- the sectional shape of the partition pattern is preferably a forward tapered shape in order to facilitate the evaporation transfer material to be uniformly deposited on the device substrate.
- the width of the insulating layer 14 is preferably wider than the width of the partition pattern 34.
- the typical width of the partition pattern is 5 to 50 ⁇ m and the pitch is 25 to 300 ⁇ m. However, it may be designed to an optimum value according to the application, and is not particularly limited.
- the upper surface of the partition pattern is used to prevent the solution from being mixed into other partitions or riding on the upper surface of the partition pattern.
- Liquid repellent treatment surface energy control
- the liquid repellent treatment there is a method in which a liquid repellent material such as a fluorine-based material is mixed with a resin material for forming a partition pattern, or a high concentration region of the liquid repellent material is selectively formed on the surface or upper surface of the partition pattern. is there.
- the surface energy state can be changed by making the partition pattern a multilayer structure of materials having different surface energies, or by performing light irradiation, plasma treatment with a fluorine-containing material-containing gas, or UV ozone treatment after the partition pattern is formed. There is also a method using a known technique such as control.
- the transfer material is a material for forming a thin film constituting a device such as an organic EL element, an organic TFT, a photoelectric conversion element, and various sensors.
- the transfer material may be either an organic material or an inorganic material including a metal. When heated, the transfer material evaporates, sublimates, or ablates, or uses an adhesive change or a volume change to change from a donor substrate to a device substrate. Anything can be used as long as it can be transferred to the head.
- the transfer material may be a precursor for thin film formation, and the transfer film may be formed by being converted into a thin film formation material by heat or light before or during transfer.
- the thickness of the transfer material depends on the function and number of transfers. For example, when transferring a donor material (electron injection material) such as lithium fluoride, a thickness of 1 nm is sufficient, and in the case of an electrode material, the thickness may be 100 nm or more. . In the case of a light emitting layer which is a preferred patterning thin film of the present invention, the thickness of the transfer material is preferably 10 to 100 nm, more preferably 20 to 50 nm.
- the method for forming the transfer material is not particularly limited, and a dry process such as vacuum evaporation or sputtering can be used. However, as a method that can easily cope with an increase in size, at least a solution composed of the transfer material and a solvent is placed in the partition pattern. It is preferable to transfer after applying and drying the solvent.
- the coating method include inkjet, nozzle coating, electropolymerization and electrodeposition, offset and flexographic printing, lithographic printing, relief printing, gravure, screen printing, and other various printing methods.
- inkjet can be exemplified as a particularly preferable method.
- the RGB organic EL material layers formed from the coating liquid are in contact with each other, and the boundary is not uniform, and a mixed layer is formed at least. In order to prevent this, it is difficult to make the film thickness of the boundary region the same as the center when the gap is formed so as not to contact each other. In any case, since this boundary region cannot be transferred because it causes a reduction in device performance, it is necessary to selectively transfer a region narrower than the organic EL material pattern on the donor substrate. Accordingly, the width of the organic EL material that can actually be used is narrowed, and when an organic EL display is manufactured, the pixel has a small aperture ratio (the area of the non-light-emitting region is large).
- solvent known materials such as water, alcohol, hydrocarbons, aromatic compounds, heterocyclic compounds, esters, ethers, and ketones can be used.
- a relatively high boiling point solvent of 100 ° C. or higher, further 150 ° C. or higher is used, and further, the solubility of the organic EL material is excellent.
- suitable solvents include methylpyrrolidone (NMP), dimethylimidazolidinone (DMI), ⁇ -butyllactone ( ⁇ BL), ethyl benzoate, tetrahydronaphthalene (THN), xylene, cumene and the like.
- the transfer material When the transfer material satisfies all the solubility, transfer resistance, and device performance after transfer, it is preferable to dissolve the original transfer material in a solvent.
- the solubility can be improved by introducing a soluble group with respect to a solvent such as an alkyl group into the transfer material.
- a soluble group When a soluble group is introduced into a prototype of a transfer material that excels in device performance, the performance may deteriorate. In that case, for example, the soluble material can be eliminated by heat at the time of transfer to deposit the original material on the device substrate.
- the transfer material When transferring a transfer material into which a soluble group has been introduced, the transfer material has a soluble group in the solvent at the time of application to prevent the generation of gas and the incorporation of desorbed material into the transfer film. It is preferable to transfer the transfer material after converting or eliminating the soluble group by. For example, taking a material having a benzene ring or an anthracene ring as an example, a material having a soluble group as shown in formulas (1) to (2) can be irradiated with light to be converted into a prototype material.
- an intramolecular cross-linking structure such as an ethylene group or a diketo group is introduced as a soluble group, and the original material is restored by a process of eliminating ethylene and carbon monoxide therefrom. It can also be made.
- the conversion or elimination of the soluble group may be in a solution state before drying or in a solid state after drying. However, in consideration of process stability, it is preferably performed in a solid state after drying. Since the original molecule of the transfer material is often nonpolar, the molecular weight of the desorbed material is small so that the desorbed material does not remain in the transfer material when the soluble group is removed in the solid state.
- the desorbed material In order to remove oxygen and water adsorbed in the transfer material together with the desorbed material, it is preferable that the desorbed material easily reacts with these molecules. From these viewpoints, it is particularly preferable to convert or eliminate the solubilizing group in the process of eliminating carbon monoxide.
- This technique can be applied to condensed polycyclic hydrocarbon compounds as well as condensed polycyclic hydrocarbon compounds such as naphthacene, pyrene, and perylene. Of course, these may be substituted or unsubstituted.
- the support of the device substrate is not particularly limited, and the materials exemplified for the donor substrate can be used.
- the difference in thermal expansion coefficient between the support of the device substrate and the donor substrate is 10 ppm / ° C.
- the following is preferable, and it is more preferable that these substrates are made of the same material.
- the glass plate exemplified as a particularly preferred support for the donor substrate can also be exemplified as a particularly preferred support for the device substrate. Both thicknesses may be the same or different.
- the device substrate may be composed only of a support during transfer, but it is general that a structure necessary for the device configuration is formed on the support in advance.
- the insulating layer 14 and the hole transport layer 16 can be formed by a conventional technique and used as a device substrate.
- a structure such as the insulating layer is not essential, but when the device substrate and the donor substrate are opposed to each other, the partition pattern of the donor substrate is prevented from coming into contact with the underlying layer formed on the device substrate and being damaged. Therefore, it is preferably formed in advance on the device substrate.
- the materials exemplified as the partition pattern of the donor substrate, the film formation method, and the patterning method can be used.
- the shape, thickness, width, and pitch of the insulating layer the shape and numerical values exemplified in the partition pattern of the donor substrate can be exemplified.
- Transfer process The donor substrate and the device substrate are opposed to each other in a vacuum, and the transfer space can be taken out into the atmosphere while keeping the transfer space in a vacuum, and transfer can be performed.
- the region surrounded by the partition pattern of the donor substrate and / or the insulating layer of the device substrate can be held in a vacuum.
- a vacuum sealing function may be provided at the periphery of the donor substrate and / or the device substrate.
- the transfer is preferably performed in a vacuum.
- a method of aligning the donor substrate and the device substrate with high accuracy in a vacuum and maintaining the facing state is, for example, vacuum dropping / pasting of a liquid crystal material used in a liquid crystal display manufacturing process.
- a known technique such as a matching step can be used.
- the donor substrate can be radiated or cooled during transfer, and when the donor substrate is reused, the donor substrate can be used as an endless belt.
- a photothermal conversion layer formed of a good conductor such as metal the donor substrate can be easily held by an electrostatic method.
- transfer in the vapor deposition mode since transfer in the vapor deposition mode is preferable, it is preferable to pattern a single transfer film in one transfer.
- the peeling mode and the ablation mode for example, by forming a stacked structure of an electron transport layer / a light emitting layer on a donor substrate, and transferring it to the device substrate while maintaining the stacked state, The light-emitting layer / electron transport layer transfer film can be patterned once.
- the transfer atmosphere may be atmospheric pressure or reduced pressure.
- transfer can be performed in the presence of an active gas such as oxygen.
- an inert gas such as nitrogen gas or under vacuum.
- the film thickness unevenness is the film thickness unevenness.
- the transfer material is formed by the coating method, the same film thickness unevenness may occur.
- the transfer material is loosened to the molecular (atomic) level during transfer. Since the film is evaporated on the device substrate and deposited on the device substrate, the film thickness unevenness of the transfer film is reduced.
- the transfer material is particles made of molecular aggregates such as pigment, and even if the transfer material is not a continuous film on the donor substrate, it is evaporated and loosened to the molecular level during transfer. By doing so, a transfer film excellent in film thickness uniformity can be obtained on the device substrate.
- the device includes an organic EL element, an organic TFT, a photoelectric conversion element, various sensors, and the like.
- various electrodes such as an organic semiconductor layer, an insulating layer, a source, a drain, and a gate can be patterned, in an organic solar cell, an electrode and the like, and in a sensor, a sensing layer and an electrode can be patterned according to the present invention.
- the organic EL element is mentioned as an example and the manufacturing method is demonstrated.
- FIG. 1 is a cross-sectional view showing an example of a typical structure of the organic EL element 10 (display).
- An active matrix circuit including the TFT 12 and the planarization layer 13 is formed on the support 11.
- the element portion is the first electrode 15 / hole transport layer 16 / light emitting layer 17 / electron transport layer 18 / second electrode 19 formed thereon.
- An insulating layer 14 that prevents a short circuit from occurring at the electrode end and defines a light emitting region is formed at the end of the first electrode.
- the device configuration is not limited to this example, for example, only one light emitting layer having a hole transport function and an electron transport function may be formed between the first electrode and the second electrode,
- the hole transport layer may be a hole injection layer and a hole transport layer, and the electron transport layer may be a multilayer structure of an electron transport layer and an electron injection layer, and the light emitting layer has an electron transport function.
- the electron transport layer may be omitted.
- these layers may be a single layer or a plurality of layers.
- a protective layer, a color filter, sealing, or the like may be performed using a known technique or the patterning method of the present invention.
- the light emitting layer In a color display, at least a light emitting layer needs to be patterned, and the light emitting layer is a thin film that is suitably patterned in the present invention.
- the insulating layer, the first electrode, the TFT, and the like are often patterned by a known photolithography method, but may be patterned by the present invention.
- at least one layer such as a positive hole transport layer, an electron carrying layer, and a 2nd electrode
- the first electrode 15 is patterned by photolithography, the insulating layer 14 is patterned by a known technique using a photosensitive polyimide precursor material, and then the hole transport layer is formed. 16 is formed on the entire surface by a known technique using a vacuum deposition method. Using this hole transport layer 16 as a base layer, the light emitting layers 17R, 17G, and 17B are patterned thereon according to the present invention shown in FIG. On top of this, if the electron transport layer 18 and the second electrode 19 are formed on the entire surface by a known technique using a vacuum deposition method or the like, the organic EL element can be completed.
- the light emitting layer may be a single layer or a plurality of layers, and the light emitting material of each layer may be a single material or a mixture of a plurality of materials. From the viewpoint of luminous efficiency, color purity, and durability, the light emitting layer preferably has a single layer structure of a mixture of a host material and a dopant material. Therefore, the transfer material for forming the light emitting layer is preferably a mixture of a host material and a dopant material.
- the transfer material can be formed by applying and drying a mixed solution of the host material and the dopant material. You may apply
- the light-emitting material an anthracene derivative, naphthacene derivative, pyrene derivative, tris (8-quinolinolato) aluminum (Alq 3) various metal complexes, bisstyrylanthracene derivatives such as quinolinol complexes and benzothiazolyl phenol zinc complexes such as tetraphenyl Butadiene derivatives, coumarin derivatives, oxadiazole derivatives, benzoxazole derivatives, carbazole derivatives, distyrylbenzene derivatives, pyrrolopyridine derivatives, perinone derivatives, cyclopentadiene derivatives, oxadiazole derivatives, thiadiazolopyridine derivatives, rubrene, quinacridone derivatives, Phenoxazone derivatives, perinone derivatives, perylene derivatives, coumarin derivatives, chrysene derivatives, pyromethene derivatives, iridium complex materials called phosphorescent materials
- examples of materials excellent in light emission performance and suitable for the patterning method of the present invention include anthracene derivatives, naphthacene derivatives, pyrene derivatives, chrysene derivatives, pyromethene derivatives, and various phosphorescent materials.
- the hole transport layer may be a single layer or a plurality of layers, and each layer may be a single material or a mixture of a plurality of materials.
- a layer called a hole injection layer is also included in the hole transport layer.
- the transfer material for forming the hole transport layer may be made of a single material or a mixture of a plurality of materials. When the transfer material is arranged in the partition pattern, it can be formed by various methods as with the light emitting layer.
- hole transport materials include N, N′-diphenyl-N, N′-dinaphthyl-1,1′-diphenyl-4,4′-diamine (NPD) and N, N′-biphenyl-N, N′—.
- Low molecular weight materials such as aromatic amines typified by N, isopropylcarbazole, pyrazoline derivatives, stilbene compounds, hydrazone compounds, heterocyclic compounds typified by oxadiazole derivatives and phthalocyanine derivatives, and these low molecular weight compounds
- polymer materials such as polycarbonate having a compound in the side chain, styrene derivative, polyvinyl carbazole, and polysilane.
- acceptor material examples include low molecular weight materials such as 7,7,8,8-tetracyanoquinodimethane (TCNQ), hexaazatriphenylene (HAT) and its cyano group derivative (HAT-CN6).
- TCNQ 7,7,8,8-tetracyanoquinodimethane
- HAT hexaazatriphenylene
- HAT-CN6 cyano group derivative
- metal oxides such as molybdenum oxide and silicon oxide that are thinly formed on the surface of the first electrode can also be exemplified as hole transport materials and acceptor materials.
- the electron transport layer may be a single layer or a plurality of layers, and each layer may be a single material or a mixture of a plurality of materials.
- a layer called a hole blocking layer or an electron injection layer is also included in the electron transport layer.
- the electron transport layer may be mixed with a donor material that promotes electron transport properties.
- a layer called the electron injection layer is often discussed as this donor material.
- the transfer material for forming the electron transport layer may be made of a single material or a mixture of a plurality of materials. When the transfer material is arranged in the partition pattern, it can be formed by various methods as with the light emitting layer.
- the electron transport material examples include quinolinol complexes such as Alq 3 and 8-quinolinolatolithium (Liq), condensed polycyclic aromatic derivatives such as naphthalene and anthracene, and 4,4′-bis (diphenylethenyl) biphenyl.
- quinolinol complexes such as Alq 3 and 8-quinolinolatolithium (Liq)
- condensed polycyclic aromatic derivatives such as naphthalene and anthracene
- 4,4′-bis (diphenylethenyl) biphenyl 4,4′-bis (diphenylethenyl) biphenyl.
- Styryl aromatic ring derivatives such as anthraquinone and diphenoquinone, phosphorus oxide derivatives, benzoquinolinol complexes, hydroxyazole complexes, azomethine complexes, various metal complexes such as tropolone metal complexes and flavonol metal complexes, heterocycles containing electron-accepting nitrogen Examples thereof include low molecular materials such as compounds having an aryl ring structure, and polymer materials having these low molecular compounds in the side chain.
- the donor material examples include alkali metals and alkaline earth metals such as lithium, cesium, magnesium, and calcium, various metal complexes such as quinolinol complexes, and oxides and fluorides such as lithium fluoride and cesium oxide. be able to.
- An electron transport material or a donor material is one of materials that easily change in performance due to the combination with each of the RGB light emitting layers, and is exemplified as another preferable example that is patterned by the present invention.
- the first electrode and the second electrode is transparent in order to extract light emitted from the light emitting layer.
- the first electrode is transparent
- the second electrode is transparent.
- the transfer material is arranged in the partition pattern, it can be formed by various methods as with the light emitting layer. Also, at the time of transfer, reactive transfer can be performed, for example, by reacting a transfer material with oxygen.
- the transparent electrode material and the other electrode conventionally known materials can be used as described in JP-A-11-214154, for example.
- the organic EL device (display) manufactured according to the present invention has the following characteristics. As shown in FIG. 24, the opening width between adjacent insulating layers 14 on the device substrate 10 is A, the width of the light emitting layer 17 existing in the region corresponding to the opening is E, and the pitch of the insulating layers 14 is P. . P is also equal to the pitch of the partition pattern of the donor substrate. At this time, in the organic EL device manufactured according to the present invention, the interval between the light emitting layers adjacent in the width direction is substantially constant, and A ⁇ E ⁇ P.
- the hole transport layer 16 is often formed in a state of being divided for each RGB subpixel.
- the interval between the light emitting layers is ⁇ .
- R, G, and B are individually patterned, and any of them may cause an error in the mask position, it is very difficult to keep the distance between the light emitting layers substantially constant.
- the light emitting layer is always formed in a region wider than the opening width on the device substrate. That is, the light emitting layer 17 runs on the insulating layer 14 as shown in FIG. 24, or the light emitting layer 17 covers the inclined portion of the insulating layer 14 as shown in FIG. Thus, since A ⁇ E and there is no portion where the light emitting layer 17 becomes thin, a short circuit due to current concentration can be prevented.
- the batch transfer is performed using a donor substrate having a predetermined pitch (there is an error in the donor substrate itself, but it can be very small compared to the error in the evaporation mask itself, especially in a large substrate).
- the distance between the light emitting layers adjacent in the width direction after the transfer is substantially constant. As shown in FIG. 24, even if an error ⁇ occurs in the alignment of the donor substrate 30 and the device substrate 10, the same error is caused for all of R, G, and B, so that the distance between the light emitting layers is not affected. Further, an interval (gap) where the light emitting layer 17 does not exist is always recognized between 17R, 17G, and 17B.
- the hole transport layer 16 is often formed so as to cover the insulating layer 14.
- the organic EL element manufactured by the present invention can be distinguished from the conventional organic EL element in this respect.
- the difference in the presence or absence of overlapping of the transfer material on the insulating layer 14 is also recognized in the same manner as in the conventional laser transfer method in which the laser is selectively irradiated for each RGB subpixel.
- the presence or absence of overlapping transfer materials on the insulating layer 14 can be detected relatively easily by observation with a fluorescence microscope or the like.
- the organic EL element of the present invention is characterized by A ⁇ E ⁇ P. Furthermore, unlike the conventional mask vapor deposition method, laser transfer method, and coating method, the E value can be freely designed. It is characterized by a large degree. For example, in FIG. 24, by designing so that A + 2 ⁇ ⁇ E, even if an error ⁇ occurs in the alignment between the device substrate 10 and the donor substrate 30, the light emitting layer 17 has the complete opening width between the insulating layers 14. And can solve the problem of short circuit in the coating method.
- the width E of the light emitting layer 17 is preferably 4 ⁇ m or more larger than the opening width A between the insulating layers 14.
- the width of the partition pattern on the donor substrate is preferably 10 ⁇ m or more. It is preferably smaller than the pitch P by 10 ⁇ m or more.
- the width of the sub-pixel is designed to have a different value for each color, that is, A, E, P, and the interval are designed to have different values for each color.
- the organic EL element of the present invention is characterized in that A ⁇ E ⁇ P and the interval is substantially constant with respect to the value defined for each color.
- the organic EL element in the present invention is not generally limited to the active matrix type in which the second electrode is formed as a common electrode.
- the organic EL element is formed of a stripe electrode in which the first electrode and the second electrode intersect each other. It may be a simple matrix type or a segment type in which the display unit is patterned so as to display predetermined information. Examples of these applications include televisions, personal computers, monitors, watches, thermometers, audio equipment, automobile display panels, and the like.
- the patterning method of the present invention can be applied not only to organic EL elements but also to devices such as organic TFTs, photoelectric conversion elements, and various sensors.
- a semiconductor precursor material is formed on a device substrate.
- a method for forming a semiconductor layer by converting after direct application has been disclosed, it is possible to obtain the same effect as an organic EL element by forming this semiconductor layer by the patterning method of the present invention. It is.
- Example 1 A donor substrate was prepared as follows. An alkali-free glass substrate was used as a support, and after cleaning / UV ozone treatment, a titanium film having a thickness of 1.0 ⁇ m was formed as a photothermal conversion layer on the entire surface by sputtering. Next, after the photothermal conversion layer has been subjected to UV ozone treatment, a positive polyimide photosensitive coating agent (DL-1000, manufactured by Toray Industries, Inc.) is spin-coated thereon, pre-baked and UV exposed, and then a developer. The exposed part was dissolved and removed by ELM-D (manufactured by Toray Industries, Inc.). The polyimide precursor film thus patterned was baked on a hot plate at 350 ° C.
- DL-1000 positive polyimide photosensitive coating agent
- the partition pattern had a thickness of 2 ⁇ m, a cross section of a forward tapered shape, and a width of 20 ⁇ m. Openings exposing the photothermal conversion layer having a width of 80 ⁇ m and a length of 280 ⁇ m were arranged in the partition pattern at a pitch of 100 and 300 ⁇ m, respectively.
- a transfer material having an average thickness of 25 nm made of Alq 3 was formed in the partition pattern (opening) by spin-coating a chloroform solution containing 3 wt% of Alq 3 .
- the device substrate was produced as follows.
- a non-alkali glass substrate manufactured by Geomat Co., Ltd., sputtering film-formed product
- ITO transparent conductive film was deposited to 140 nm
- the polyimide precursor film patterned similarly to the donor substrate was baked at 300 ° C. for 10 minutes to form a polyimide-based insulating layer.
- the height of this insulating layer was 1.8 ⁇ m
- the cross section was a forward tapered shape
- the width was 30 ⁇ m.
- Openings exposing ITO with a width of 70 ⁇ m and a length of 270 ⁇ m were arranged at a pitch of 100 and 300 ⁇ m inside the pattern of the insulating layer.
- This substrate was subjected to UV ozone treatment, installed in a vacuum deposition apparatus, and evacuated until the degree of vacuum in the apparatus became 3 ⁇ 10 ⁇ 4 Pa or less.
- 20 nm of copper phthalocyanine (CuPc) and 40 nm of NPD were stacked as a hole transport layer by vapor deposition over the entire light emitting region.
- the partition pattern of the donor substrate and the insulating layer of the device substrate were aligned and held in a vacuum of 3 ⁇ 10 ⁇ 4 Pa or less, and then taken out into the atmosphere.
- the transfer space partitioned by the insulating layer and the partition pattern was kept at a reduced pressure.
- a laser light source: semiconductor laser diode
- a central wavelength of 800 nm is irradiated from the glass substrate side of the donor substrate so that a part of the transfer material and a part of the partition pattern are heated at the same time.
- 3 was transferred onto the hole transport layer which is the underlying layer of the device substrate.
- the laser intensity was about 300 W / mm 2
- the scanning speed was 1.25 m / s
- repeated scanning was performed by overlapping the lasers so as to be transferred over the entire light emitting region.
- the device substrate after the transfer of Alq 3 was placed in the vacuum deposition apparatus again and evacuated until the degree of vacuum in the apparatus became 3 ⁇ 10 ⁇ 4 Pa or less.
- E-1 shown below as an electron transporting layer was deposited on the entire surface of the light emitting region by resistance heating.
- lithium fluoride was deposited at a thickness of 0.5 nm as a donor material (electron injection layer), and aluminum was deposited at a thickness of 100 nm as a second electrode to produce an organic EL device having a 5 mm square light emitting region.
- Example 2 Example 1 except that a transfer material containing 5 wt% of rubrene as a dopant material in Alq 3 as a host material was formed by spin coating a chloroform solution containing 1.5 wt% of Alq 3 and rubrene in total. In the same manner as in Example 1, an organic EL device was produced.
- Comparative Example 1 An organic EL device was produced in the same manner as in Example 1 except that the laser was irradiated so that only the transfer material was heated, and Alq 3 as the transfer material was transferred.
- Comparative Example 2 An organic EL device was produced in the same manner as in Example 2 except that the laser was irradiated so that only the transfer material was heated, and the mixture of Alq 3 and rubrene as the transfer material was transferred.
- Comparative Example 3 Although an attempt was made to produce an organic EL device in the same manner as in Example 1 except that the photothermal conversion layer was not formed on the donor substrate, the transfer material could not absorb the laser sufficiently, and the transfer could not be carried out sufficiently. .
- Comparative Example 4 Although an attempt was made to produce an organic EL device in the same manner as in Example 1 except that the laser was irradiated under conditions that resulted in 5 times the intensity without forming a photothermal conversion layer on the donor substrate, the transfer material still has sufficient laser. It was also observed that a sufficient transfer could not be carried out due to the absorption of the substrate, the device substrate was heated by the leakage of the laser, and the hole transport layer adhered to the donor substrate side. Furthermore, thermal deterioration and deformation of the partition pattern of the donor substrate, and generation of degassing were observed.
- Example 3 A donor substrate was produced in the same manner as in Example 1 except that a tantalum film having a thickness of 0.4 ⁇ m was formed as a photothermal conversion layer on the entire surface by sputtering to form a partition pattern having a thickness of 7 ⁇ m and a width of 20 ⁇ m.
- a transfer material having a thickness of 38 nm is formed by co-evaporating a pyrene red host material RH-1 and a pyromethene red dopant material RD-1 (0.5 wt% with respect to the host material) over the entire surface of the substrate. did.
- the device substrate was also prepared in the same manner as in Example 1 except that the height of the insulating layer was 2 ⁇ m, the width was 30 ⁇ m, and the opening exposing the ITO was 70 ⁇ m wide and 250 ⁇ m long.
- 50 nm of an amine compound and 10 nm of NPD were deposited as a hole transport layer on the entire light emitting region of the substrate.
- the positions of the partition pattern of the donor substrate and the insulating layer of the device substrate are aligned and opposed to each other, and after holding in a vacuum of 3 ⁇ 10 ⁇ 4 Pa or less, the outer periphery is sealed and taken out to the atmosphere. It was.
- the transfer space partitioned by the insulating layer and the partition pattern was kept in a vacuum.
- light having a center wavelength of 940 nm and an irradiation shape formed into a rectangle of 340 ⁇ m wide and 50 ⁇ m long (light source: semiconductor laser diode) was used.
- the electron transport layer E-1 was deposited to 30 nm, lithium fluoride was deposited to 0.5 nm, and aluminum was deposited to 100 nm on the device substrate after the co-deposition film was transferred. An organic EL red element was produced.
- the transfer number of 1 means that the entire film thickness of the transfer material with a thickness of 38 nm is transferred just by one light irradiation, and the 24 times means the whole film of the transfer material with a thickness of 38 nm by 24 times of light irradiation. It means that the thickness is just transferred (the average film thickness transferred by one light irradiation is about 1.6 nm). Clear red light emission was confirmed from any of the elements, and it was confirmed that the transferred light-emitting layer covered the opening of the insulating layer of the device substrate without a shortage.
- Example 4 A donor substrate was produced in the same manner as in Example 3 except that a molybdenum film having a thickness of 0.4 ⁇ m was formed as a photothermal conversion layer on the entire surface by sputtering.
- a solution was prepared by dissolving 1 wt% and 0.05 wt% of RH-2 precursor having a diketo crosslinked structure as a soluble group and pyromethene red dopant material RD-1 in tetrahydronaphthalene (THN), respectively. This solution was applied to a donor substrate by an ink jet method and dried to form a mixed film of the RH-2 precursor and the red dopant material in the partition pattern.
- Example 5 A donor substrate was produced in the same manner as in Example 4.
- the pyrene-based red host material RH-1 and the pyromethene-based red dopant material RD-1 are dissolved in THN at 1 wt% and 0.05 wt%, respectively.
- the G solution was prepared by dissolving 1 wt% and 0.05 wt% of the material (C545T) in THN, and the B solution was prepared by dissolving 1 wt% of the pyrene-based blue host material BH-1 in THN.
- an R transfer material having an average film thickness of 40 nm composed of a mixed film of a red host material and a red dopant material, a green host material and a green color are formed in the width direction of the partition pattern.
- a donor substrate was prepared in which a G transfer material having an average film thickness of 30 nm made of a mixed film with a dopant material and a B transfer material having an average film thickness of 20 nm made of a blue host material were sequentially repeated.
- the alignment error of the alignment mechanism is ⁇ 2 ⁇ m
- the number of times of transfer is 24 times
- the laser intensity is 148 W / mm 2
- the organic EL element as in Example 3. was made.
- aluminum was patterned into 200 stripes at 300 ⁇ m pitch by mask vapor deposition, and the longitudinal direction of the stripe electrodes was made to coincide with the width direction of the insulating layer. Therefore, the produced organic EL element has a structure of a simple matrix display in which the first electrode made of ITO stripe and the second electrode made of aluminum stripe are orthogonal to each other, and R, G, B at the intersection of both electrodes. 256 ⁇ 200 pixels composed of the sub-pixels are arranged. From each subpixel, clear R, G, and B light emission was confirmed, and color mixing between the subpixels was not recognized.
- Comparative Example 5 Using light that is shaped into a rectangular shape with a light irradiation shape of 80 ⁇ m in width and 50 ⁇ m in length, the transfer material for each of R, G, and B is individually irradiated by irradiating the photothermal conversion layer with light so that only the transfer material is heated.
- An organic EL device was produced in the same manner as in Example 5 except that the transfer was performed. However, in the vicinity of the long side portion of the four sides of the rectangular sub-pixel, a portion where the light emitting layer is thinner than the central portion is formed, and current concentrates on that portion to emit light relatively brightly. A short-circuiting phenomenon was observed.
- Comparative Example 6 An organic EL device was produced in the same manner as in Example 5 except that the partition pattern was not formed on the donor substrate. However, adjacent transfer materials were mixed immediately after application of the solution, and the boundaries between the R, G, and B transfer materials after drying were not clear. In addition, these mixed areas are also transferred simultaneously in the batch transfer, and some of them are deposited on the insulating layer of the device substrate, so the light emission is not affected, but the other part is transferred into the pixels. A problem has been recognized in that the emission color is slightly different depending on the color mixture for each sub-pixel of the organic EL element, and the emission color is uneven within the sub-pixel.
- the opening of the R pixel is not completely covered with the light emitting layer, and the hole transport layer and the electron transport layer are in direct contact with each other without going through the light emitting layer.
- the hole transport layer and the electron transport layer were in direct contact with each other without going through the light emitting layer.
- a small amount of blue light emission was confirmed from that portion.
- the present invention is a thin film patterning technology for organic EL elements, organic TFTs, photoelectric conversion elements, various sensors, and other devices, and is used for display panels used in mobile phones, personal computers, televisions, image scanners, etc. It can be used for manufacturing touch panels, image sensors, and the like.
- Organic EL elements (device substrates) 11 Support 12 TFT (including extraction electrode) DESCRIPTION OF SYMBOLS 13 Flattening layer 14 Insulating layer 15 1st electrode 16 Hole transport layer 17 Light emitting layer 18 Electron transport layer 19 Second electrode 20 Device substrate 21 Support body 27 Transfer film 30 Donor substrate 31 Support body 33 Photothermal conversion layer 34 Partition pattern 37 Transfer material 38 Transfer region 39 Transfer auxiliary layer 41 Optical mask 42 Lens 43 Mirror 44 Light source 45 Virtual focal plane
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Abstract
Description
図6は本発明におけるドナー基板への光照射方法の一例を示す断面図である。図6(a)において、ドナー基板30は、支持体31、光熱変換層33、区画パターン34、区画パターン内に存在する1種類の転写材料37からなり、転写基板20は支持体21のみからなる。本発明は、図6(b)に示すように、ドナー基板30の支持体31側からレーザーに代表される光を入射して、転写材料37の少なくとも一部と区画パターン34の少なくとも一部とが同時に加熱されるように光を光熱変換層33に照射することを特徴とする。このような配置をとることで、区画パターン34と転写材料37との境界での温度低下が抑制されるので、境界に存在する転写材料を十分に加熱して転写し、均一な転写膜27を得ることができる。 (1) Irradiation light FIG. 6 is a cross-sectional view showing an example of a method of irradiating light to a donor substrate in the present invention. 6A, the
ドナー基板の支持体は、光の吸収率が小さく、その上に光熱変換層や区画パターン、転写材料を安定に形成できる材料であれば特に限定されない。条件によっては樹脂フィルムを使用することが可能であり、樹脂材料としては、ポリエステル、ポリエチレン、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリカーボネート、ポリアクリル、ポリスルフォン、ポリエーテルスルフォン、ポリフェニレンサルファイド、ポリイミド、ポリアミド、ポリベンゾオキサゾール、ポリエポキシ、ポリプロピレン、ポリオレフィン、アラミド樹脂、シリコーン樹脂などを例示できる。 (2) Donor substrate The support of the donor substrate is not particularly limited as long as it has a low light absorption rate and can stably form a photothermal conversion layer, a partition pattern, and a transfer material thereon. Depending on the conditions, it is possible to use a resin film. As resin materials, polyester, polyethylene, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyacryl, polysulfone, polyethersulfone, polyphenylene sulfide, polyimide, polyamide, poly Examples include benzoxazole, polyepoxy, polypropylene, polyolefin, aramid resin, and silicone resin.
転写材料は、有機EL素子をはじめとし、有機TFTや光電変換素子、各種センサーなどのデバイスを構成する薄膜を形成する材料である。転写材料は、有機材料、金属を含む無機材料いずれでもよく、加熱された際に、蒸発、昇華、あるいはアブレーション昇華するか、あるいは、接着性変化や体積変化を利用して、ドナー基板からデバイス基板へと転写されるものであればよい。また、転写材料が薄膜形成の前駆体であり、転写前あるいは転写中に熱や光によって薄膜形成材料に変換されて転写膜が形成されてもよい。 (3) Transfer material The transfer material is a material for forming a thin film constituting a device such as an organic EL element, an organic TFT, a photoelectric conversion element, and various sensors. The transfer material may be either an organic material or an inorganic material including a metal. When heated, the transfer material evaporates, sublimates, or ablates, or uses an adhesive change or a volume change to change from a donor substrate to a device substrate. Anything can be used as long as it can be transferred to the head. The transfer material may be a precursor for thin film formation, and the transfer film may be formed by being converted into a thin film formation material by heat or light before or during transfer.
デバイス基板の支持体は特に限定されず、ドナー基板で例示した材料を用いることができる。両者を対向させて転写材料を転写させる際に、温度変化による熱膨張の違いによりパターニング精度が悪化するのを防ぐためには、デバイス基板とドナー基板の支持体の熱膨張率の差は10ppm/℃以下であることが好ましく、またこれらの基板が同一材料からなることが更に好ましい。ドナー基板の特に好ましい支持体として例示したガラス板は、デバイス基板の特に好ましい支持体としても例示できる。なお、両者の厚さは同じでも異なっていてもよい。 (4) Device substrate The support of the device substrate is not particularly limited, and the materials exemplified for the donor substrate can be used. In order to prevent the patterning accuracy from deteriorating due to the difference in thermal expansion due to temperature change when the transfer material is transferred with both facing each other, the difference in thermal expansion coefficient between the support of the device substrate and the donor substrate is 10 ppm / ° C. The following is preferable, and it is more preferable that these substrates are made of the same material. The glass plate exemplified as a particularly preferred support for the donor substrate can also be exemplified as a particularly preferred support for the device substrate. Both thicknesses may be the same or different.
ドナー基板とデバイス基板とを真空中で対向させ、転写空間をそのまま真空に保持した状態で大気中に取り出し、転写を実施することができる。例えば、ドナー基板の区画パターンおよび/またはデバイス基板の絶縁層を利用して、これらに囲まれた領域を真空に保持することができる。この場合には、ドナー基板および/またはデバイス基板の周辺部に真空シール機能を設けてもよい。デバイス基板の下地層、例えば正孔輸送層が真空プロセスで形成され、発光層を本発明によってパターニングし、電子輸送層も真空プロセスで形成する場合は、ドナー基板とデバイス基板とを真空中で対向させ、真空中で転写を実行することが好ましい。この場合に、ドナー基板とデバイス基板とを真空中で高精度に位置合わせし、対向状態を維持する方法には、例えば、液晶ディスプレイの製造プロセスにおいて使用されている、液晶材料の真空滴下・貼り合わせ工程などの公知技術を利用することができる。また、転写雰囲気によらず、転写時にドナー基板を放熱あるいは冷却することもできるし、ドナー基板を再利用する場合には、ドナー基板をエンドレスベルトとして利用することも可能である。金属などの良導体で形成した光熱変換層を利用することで、ドナー基板を静電方式により容易に保持することができる。 (5) Transfer process The donor substrate and the device substrate are opposed to each other in a vacuum, and the transfer space can be taken out into the atmosphere while keeping the transfer space in a vacuum, and transfer can be performed. For example, the region surrounded by the partition pattern of the donor substrate and / or the insulating layer of the device substrate can be held in a vacuum. In this case, a vacuum sealing function may be provided at the periphery of the donor substrate and / or the device substrate. When a base layer of a device substrate, for example, a hole transport layer is formed by a vacuum process, a light emitting layer is patterned by the present invention, and an electron transport layer is also formed by a vacuum process, the donor substrate and the device substrate are opposed to each other in a vacuum. The transfer is preferably performed in a vacuum. In this case, for example, a method of aligning the donor substrate and the device substrate with high accuracy in a vacuum and maintaining the facing state is, for example, vacuum dropping / pasting of a liquid crystal material used in a liquid crystal display manufacturing process. A known technique such as a matching step can be used. Also, regardless of the transfer atmosphere, the donor substrate can be radiated or cooled during transfer, and when the donor substrate is reused, the donor substrate can be used as an endless belt. By using a photothermal conversion layer formed of a good conductor such as metal, the donor substrate can be easily held by an electrostatic method.
ドナー基板を以下のとおり作製した。支持体として無アルカリガラス基板を用い、洗浄/UVオゾン処理後に、光熱変換層として厚さ1.0μmのチタン膜をスパッタリング法により全面形成した。次に、前記光熱変換層をUVオゾン処理した後に、上にポジ型ポリイミド系感光性コーティング剤(東レ株式会社製、DL-1000)をスピンコート塗布し、プリベーキング、UV露光した後に、現像液(東レ株式会社製、ELM-D)により露光部を溶解・除去した。このようにパターニングしたポリイミド前駆体膜をホットプレートで350℃、10分間ベーキングして、ポリイミド系の区画パターンを形成した。この区画パターンの厚さは2μmで、断面は順テーパー形状であり、その幅は20μmであった。区画パターン内部には幅80μm、長さ280μmの光熱変換層を露出する開口部が、それぞれ100、300μmのピッチで配置されていた。この基板上に、Alq3を3wt%含むクロロホルム溶液をスピンコート塗布することで区画パターン内(開口部)にAlq3からなる平均厚さ25nmの転写材料を形成した。 Example 1
A donor substrate was prepared as follows. An alkali-free glass substrate was used as a support, and after cleaning / UV ozone treatment, a titanium film having a thickness of 1.0 μm was formed as a photothermal conversion layer on the entire surface by sputtering. Next, after the photothermal conversion layer has been subjected to UV ozone treatment, a positive polyimide photosensitive coating agent (DL-1000, manufactured by Toray Industries, Inc.) is spin-coated thereon, pre-baked and UV exposed, and then a developer. The exposed part was dissolved and removed by ELM-D (manufactured by Toray Industries, Inc.). The polyimide precursor film thus patterned was baked on a hot plate at 350 ° C. for 10 minutes to form a polyimide-based partition pattern. The partition pattern had a thickness of 2 μm, a cross section of a forward tapered shape, and a width of 20 μm. Openings exposing the photothermal conversion layer having a width of 80 μm and a length of 280 μm were arranged in the partition pattern at a pitch of 100 and 300 μm, respectively. On this substrate, a transfer material having an average thickness of 25 nm made of Alq 3 was formed in the partition pattern (opening) by spin-coating a chloroform solution containing 3 wt% of Alq 3 .
Alq3とルブレンとを合計1.5wt%含むクロロホルム溶液をスピンコート塗布することで、ホスト材料であるAlq3中にドーパント材料であるルブレンが5wt%含まれる転写材料を形成した以外は、実施例1と同様にして有機EL素子を作製した。 Example 2
Example 1 except that a transfer material containing 5 wt% of rubrene as a dopant material in Alq 3 as a host material was formed by spin coating a chloroform solution containing 1.5 wt% of Alq 3 and rubrene in total. In the same manner as in Example 1, an organic EL device was produced.
転写材料のみが加熱されるようにレーザーを照射し、転写材料であるAlq3を転写したこと以外は実施例1と同様にして有機EL素子を作製した。 Comparative Example 1
An organic EL device was produced in the same manner as in Example 1 except that the laser was irradiated so that only the transfer material was heated, and Alq 3 as the transfer material was transferred.
転写材料のみが加熱されるようにレーザーを照射し、転写材料であるAlq3とルブレンとの混合体を転写したこと以外は実施例2と同様にして有機EL素子を作成した。 Comparative Example 2
An organic EL device was produced in the same manner as in Example 2 except that the laser was irradiated so that only the transfer material was heated, and the mixture of Alq 3 and rubrene as the transfer material was transferred.
ドナー基板に光熱変換層を形成しなかったこと以外は実施例1と同様に有機EL素子の作製を試みたが、転写材料がレーザーを十分に吸収できずに、十分な転写を実施できなかった。 Comparative Example 3
Although an attempt was made to produce an organic EL device in the same manner as in Example 1 except that the photothermal conversion layer was not formed on the donor substrate, the transfer material could not absorb the laser sufficiently, and the transfer could not be carried out sufficiently. .
ドナー基板に光熱変換層を形成せずに、5倍の強度になる条件でレーザーを照射したこと以外は実施例1と同様に有機EL素子の作製を試みたが、転写材料がレーザーを未だ十分に吸収できずに、十分な転写を実施できず、レーザーの漏洩によりデバイス基板が加熱されて正孔輸送層がドナー基板側に付着する現象も認められた。さらに、ドナー基板の区画パターンの熱劣化や変形、脱ガスの発生が認められた。 Comparative Example 4
Although an attempt was made to produce an organic EL device in the same manner as in Example 1 except that the laser was irradiated under conditions that resulted in 5 times the intensity without forming a photothermal conversion layer on the donor substrate, the transfer material still has sufficient laser. It was also observed that a sufficient transfer could not be carried out due to the absorption of the substrate, the device substrate was heated by the leakage of the laser, and the hole transport layer adhered to the donor substrate side. Furthermore, thermal deterioration and deformation of the partition pattern of the donor substrate, and generation of degassing were observed.
光熱変換層として厚さ0.4μmのタンタル膜をスパッタリング法により全面形成し、厚さ7μm、幅20μmの区画パターンを形成したこと以外は実施例1と同様にしてドナー基板を作製した。この基板上の全面に、ピレン系赤色ホスト材料RH-1とピロメテン系赤色ドーパント材料RD-1(ホスト材料に対して0.5wt%)を共蒸着することで、厚さ38nmの転写材料を形成した。デバイス基板についても、絶縁層の高さを2μm、幅30μm、ITOを露出する開口部を横70μm、縦250μmとしたこと以外は実施例1と同様に作製した。実施例1と同様にして、この基板の発光領域全面に正孔輸送層として、アミン系化合物を50nm、NPDを10nmを蒸着した。 Example 3
A donor substrate was produced in the same manner as in Example 1 except that a tantalum film having a thickness of 0.4 μm was formed as a photothermal conversion layer on the entire surface by sputtering to form a partition pattern having a thickness of 7 μm and a width of 20 μm. A transfer material having a thickness of 38 nm is formed by co-evaporating a pyrene red host material RH-1 and a pyromethene red dopant material RD-1 (0.5 wt% with respect to the host material) over the entire surface of the substrate. did. The device substrate was also prepared in the same manner as in Example 1 except that the height of the insulating layer was 2 μm, the width was 30 μm, and the opening exposing the ITO was 70 μm wide and 250 μm long. In the same manner as in Example 1, 50 nm of an amine compound and 10 nm of NPD were deposited as a hole transport layer on the entire light emitting region of the substrate.
光熱変換層として厚さ0.4μmのモリブデン膜をスパッタリング法により全面形成したこと以外は実施例3と同様にしてドナー基板を作製した。可溶性基としてジケト架橋構造をもつRH-2前駆体とピロメテン系赤色ドーパント材料RD-1とをテトラヒドロナフタレン(THN)にそれぞれ1wt%、0.05wt%溶解させた溶液を作製した。この溶液をインクジェット法によりドナー基板へと塗布し、乾燥させることで、RH-2前駆体と赤色ドーパント材料との混合膜を区画パターン内に形成した。この混合膜に真空中で中心波長460nmの青色光(光源:発光ダイオード)を5分間照射することで、RH-2前駆体のジケト架橋構造を脱離し、赤色ホスト材料RH-2に変換した。このようにして、ドナー基板の区画パターン内に、赤色ホスト材料と赤色ドーパント材料との混合膜からなる、平均膜厚40nmの転写材料を形成した。 Example 4
A donor substrate was produced in the same manner as in Example 3 except that a molybdenum film having a thickness of 0.4 μm was formed as a photothermal conversion layer on the entire surface by sputtering. A solution was prepared by dissolving 1 wt% and 0.05 wt% of RH-2 precursor having a diketo crosslinked structure as a soluble group and pyromethene red dopant material RD-1 in tetrahydronaphthalene (THN), respectively. This solution was applied to a donor substrate by an ink jet method and dried to form a mixed film of the RH-2 precursor and the red dopant material in the partition pattern. By irradiating this mixed film with blue light (light source: light emitting diode) having a central wavelength of 460 nm in vacuum for 5 minutes, the diketo-crosslinked structure of the RH-2 precursor was desorbed and converted to the red host material RH-2. In this way, a transfer material having an average film thickness of 40 nm made of a mixed film of a red host material and a red dopant material was formed in the partition pattern of the donor substrate.
実施例4と同様にしてドナー基板を作製した。区画パターンの幅は20μmであり、区画パターン内部には幅80μm(E=80μm)、長さ280μmの光熱変換層を露出する開口部が、幅方向に100μmピッチ(P=100μm)で768個、長さ方向に300μmのピッチで200個配置されていた。ピレン系赤色ホスト材料RH-1とピロメテン系赤色ドーパント材料RD-1とをTHNにそれぞれ1wt%、0.05wt%溶解させることでR溶液を、ピレン系緑色ホスト材料GH-1とクマリン系緑色ドーパント材料(C545T)とをTHNにそれぞれ1wt%、0.05wt%溶解させることでG溶液を、ピレン系青色ホスト材料BH-1をTHNに1wt%溶解させることでB溶液を作製した。これらの溶液をインクジェット法により塗布し、乾燥させることで、区画パターンの幅方向に、赤色ホスト材料と赤色ドーパント材料との混合膜からなる平均膜厚40nmのR転写材料と、緑色ホスト材料と緑色ドーパント材料との混合膜からなる平均膜厚30nmのG転写材料と、青色ホスト材料からなる平均膜厚20nmのB転写材料とが順番に繰り返すような配置で形成されたドナー基板を用意した。 Example 5
A donor substrate was produced in the same manner as in Example 4. The width of the partition pattern is 20 μm, and there are 768 openings in the partition pattern that expose the photothermal conversion layer having a width of 80 μm (E = 80 μm) and a length of 280 μm at a pitch of 100 μm (P = 100 μm) in the width direction. 200 pieces were arranged in the length direction at a pitch of 300 μm. The pyrene-based red host material RH-1 and the pyromethene-based red dopant material RD-1 are dissolved in THN at 1 wt% and 0.05 wt%, respectively. The G solution was prepared by dissolving 1 wt% and 0.05 wt% of the material (C545T) in THN, and the B solution was prepared by dissolving 1 wt% of the pyrene-based blue host material BH-1 in THN. By applying and drying these solutions by an ink jet method, an R transfer material having an average film thickness of 40 nm composed of a mixed film of a red host material and a red dopant material, a green host material and a green color are formed in the width direction of the partition pattern. A donor substrate was prepared in which a G transfer material having an average film thickness of 30 nm made of a mixed film with a dopant material and a B transfer material having an average film thickness of 20 nm made of a blue host material were sequentially repeated.
光の照射形状を横80μm、縦50μmの矩形に成形した光を用いて、転写材料のみが加熱されるように光を光熱変換層に照射することで、R、G、B各転写材料を個別に転写したこと以外は実施例5と同様にして有機EL素子を作製した。しかしながら、長方形の副画素の4辺のうち長辺部分近傍において、発光層が中央部よりも薄い部分が形成され、その部分に電流が集中して相対的に明るく発光し、短時間のうちに短絡する現象が認められた。 Comparative Example 5
Using light that is shaped into a rectangular shape with a light irradiation shape of 80 μm in width and 50 μm in length, the transfer material for each of R, G, and B is individually irradiated by irradiating the photothermal conversion layer with light so that only the transfer material is heated. An organic EL device was produced in the same manner as in Example 5 except that the transfer was performed. However, in the vicinity of the long side portion of the four sides of the rectangular sub-pixel, a portion where the light emitting layer is thinner than the central portion is formed, and current concentrates on that portion to emit light relatively brightly. A short-circuiting phenomenon was observed.
ドナー基板に区画パターンを形成しなかったこと以外は実施例5と同様にして有機EL素子を作製した。しかしながら、溶液の塗布直後から隣り合う転写材料同士が混ざり合い、乾燥後のR、G、B各転写材料の境界が明確ではなかった。さらに、一括転写においてこれらの混合領域も同時に転写され、その一部はデバイス基板の絶縁層上部に堆積したために発光に影響は与えなかったが、他の一部は画素中に転写されたために、有機EL素子の副画素ごとに混色によって発光色が少しずつ異なり、さらに、副画素内でも発光色がムラになるという問題が認められた。 Comparative Example 6
An organic EL device was produced in the same manner as in Example 5 except that the partition pattern was not formed on the donor substrate. However, adjacent transfer materials were mixed immediately after application of the solution, and the boundaries between the R, G, and B transfer materials after drying were not clear. In addition, these mixed areas are also transferred simultaneously in the batch transfer, and some of them are deposited on the insulating layer of the device substrate, so the light emission is not affected, but the other part is transferred into the pixels. A problem has been recognized in that the emission color is slightly different depending on the color mixture for each sub-pixel of the organic EL element, and the emission color is uneven within the sub-pixel.
実施例5と同様にしてドナー基板を用意した。ただし、区画パターンの幅を26μm、光熱変換層を露出する開口部を幅74μm(E=74μm)、長さ274μmとした。このドナー基板と実施例5と同じデバイス基板(A=70μm、P=100μm)を位置合わせして対向させ(位置合わせ機構の位置合わせ誤差は±2μm)、転写回数を24回、レーザー強度を148W/mm2として実施例5と同様に有機EL素子(単純マトリクス型ディスプレイ)を作製した。R、G、Bの各副画素からは、それぞれ明瞭なR、G、B発光が確認され、蛍光顕微鏡観察によっても各色の発光層が対応する副画素の開口幅を完全に覆っていることが確認できた。 Example 6
A donor substrate was prepared in the same manner as in Example 5. However, the width of the partition pattern was 26 μm, the opening exposing the photothermal conversion layer was 74 μm wide (E = 74 μm), and 274 μm long. This donor substrate and the same device substrate as in Example 5 (A = 70 μm, P = 100 μm) are aligned and face each other (the alignment error of the alignment mechanism is ± 2 μm), the number of times of transfer is 24 times, and the laser intensity is 148 W as in example 5 as / mm 2 to produce an organic EL device (passive matrix display). Clear R, G, and B light emission is confirmed from each of the R, G, and B sub-pixels, and the light-emitting layer of each color completely covers the aperture width of the corresponding sub-pixel even by observation with a fluorescence microscope. It could be confirmed.
実施例6と同様に有機EL素子(単純マトリクス型ディスプレイ)を作製した(A=70μm、P=100μm)。ただし、ドナー基板の区画パターンの幅を28μm、光熱変換層を露出する開口部を幅72μm(E=72μm)、長さ272μmとした。作製した3個の有機EL素子のうち2個では、R、G、Bの各副画素から、それぞれ明瞭なR、G、B発光が確認され、蛍光顕微鏡観察によっても各色の発光層が対応する副画素の開口幅を完全に覆っていることが確認できた。しかし、残りの1個の有機EL素子では、少なくともR画素の開口部が発光層によって完全に覆われておらず、正孔輸送層と電子輸送層が発光層を介さずに直接接している部分が僅かに存在していることがわかった。その部分からは微量の青色発光(正孔輸送層からの発光)が確認された。 Example 7
An organic EL element (simple matrix type display) was produced in the same manner as in Example 6 (A = 70 μm, P = 100 μm). However, the width of the partition pattern of the donor substrate was 28 μm, the opening exposing the photothermal conversion layer was 72 μm wide (E = 72 μm), and the length was 272 μm. In two of the produced three organic EL elements, clear R, G, and B light emission was confirmed from each of the R, G, and B sub-pixels, and the light-emitting layers of the respective colors correspond to each other by fluorescence microscope observation. It was confirmed that the aperture width of the sub-pixel was completely covered. However, in the remaining one organic EL element, at least the opening of the R pixel is not completely covered with the light emitting layer, and the hole transport layer and the electron transport layer are in direct contact with each other without going through the light emitting layer. Was found to be slightly present. A small amount of blue light emission (light emission from the hole transport layer) was confirmed from that portion.
実施例6と同様に有機EL素子(単純マトリクス型ディスプレイ)を作製した(A=70μm、P=100μm)。ただし、ドナー基板の区画パターンの幅を10μm、光熱変換層を露出する開口部を幅90μm(E=90μm)、長さ290μmとした。R、G、Bの各副画素からは、それぞれ明瞭なR、G、B発光が確認され、蛍光顕微鏡観察によっても各色の発光層が対応する副画素の開口幅を完全に覆っていることが確認できた。 Example 8
An organic EL element (simple matrix type display) was produced in the same manner as in Example 6 (A = 70 μm, P = 100 μm). However, the width of the partition pattern of the donor substrate was 10 μm, the opening exposing the photothermal conversion layer was 90 μm wide (E = 90 μm), and the length was 290 μm. Clear R, G, and B light emission is confirmed from each of the R, G, and B sub-pixels, and the light-emitting layer of each color completely covers the aperture width of the corresponding sub-pixel even by observation with a fluorescence microscope. It could be confirmed.
実施例6と同様に有機EL素子(単純マトリクス型ディスプレイ)を作製した(A=70μm、P=100μm)。ただし、ドナー基板の区画パターンの幅を6μm、光熱変換層を露出する開口部を幅94μm(E=94μm)、長さ294μmとした。区画パターンの幅が狭いために、区画パターンと基板との密着力が低下して、一部の区画パターンに欠損が生じた。さらに、インクジェット法により転写材料を形成する際に、インクが上記欠損部分を通じて、あるいは、狭い区画パターンの一部を乗り越えることで、隣の開口部と混合する部分が形成された。有機EL素子の大部分のR、G、Bの各副画素からは、それぞれ明瞭なR、G、B発光が確認され、蛍光顕微鏡観察によっても各色の発光層が対応する副画素の開口幅を完全に覆っていることが確認できた。しかし、一部の副画素には混合した転写材料が転写され、発光からも混色が確認された。 Example 9
An organic EL element (simple matrix type display) was produced in the same manner as in Example 6 (A = 70 μm, P = 100 μm). However, the width of the partition pattern of the donor substrate was 6 μm, the opening exposing the photothermal conversion layer was 94 μm wide (E = 94 μm), and 294 μm long. Due to the narrow width of the partition pattern, the adhesion between the partition pattern and the substrate was reduced, and some of the partition patterns were defective. Further, when the transfer material was formed by the ink jet method, the ink mixed with the adjacent opening was formed by passing through the above-described defect portion or over a part of the narrow partition pattern. Clear R, G, and B light emission is confirmed from each of the R, G, and B sub-pixels of most of the organic EL elements, and the emission width of each sub-pixel corresponds to the light-emitting layer of each color also by fluorescence microscope observation. It was confirmed that it was completely covered. However, the mixed transfer material was transferred to some of the sub-pixels, and color mixing was confirmed from light emission.
11 支持体
12 TFT(取り出し電極含む)
13 平坦化層
14 絶縁層
15 第一電極
16 正孔輸送層
17 発光層
18 電子輸送層
19 第二電極
20 デバイス基板
21 支持体
27 転写膜
30 ドナー基板
31 支持体
33 光熱変換層
34 区画パターン
37 転写材料
38 転写領域
39 転写補助層
41 光学マスク
42 レンズ
43 ミラー
44 光源
45 仮想焦点面 10 Organic EL elements (device substrates)
11
DESCRIPTION OF
Claims (10)
- 基板上に光熱変換層と区画パターンが形成され、前記区画パターン内に転写材料が存在するドナー基板をデバイス基板と対向配置し、前記転写材料の少なくとも一部と前記区画パターンの少なくとも一部とが同時に加熱されるように光を光熱変換層に照射することで前記転写材料をデバイス基板に転写することを特徴とするパターニング方法。 A photothermal conversion layer and a partition pattern are formed on the substrate, a donor substrate having a transfer material in the partition pattern is disposed opposite to the device substrate, and at least a part of the transfer material and at least a part of the partition pattern are A patterning method, wherein the transfer material is transferred to a device substrate by irradiating the light-to-heat conversion layer with light so as to be simultaneously heated.
- 区画パターン内に存在する転写材料の幅よりも広い光を光熱変換層に照射することを特徴とする請求項1記載のパターニング方法。 2. The patterning method according to claim 1, wherein the light-to-heat conversion layer is irradiated with light wider than the width of the transfer material existing in the partition pattern.
- 2種類以上の異なる転写材料が存在するドナー基板を用い、前記2種類以上の異なる転写材料の各々の幅とそれらの転写材料の間に存在する区画パターンの幅との合計よりも広い光を光熱変換層に照射することで、前記2種類以上の異なる転写材料を一括して転写することを特徴とする請求項1または2記載のパターニング方法。 Using a donor substrate on which two or more different transfer materials are present, light that is wider than the sum of the width of each of the two or more different transfer materials and the width of the partition pattern existing between the transfer materials is photothermal The patterning method according to claim 1, wherein the two or more different transfer materials are collectively transferred by irradiating the conversion layer.
- 光を光熱変換層に複数回に分けて照射することで、少なくとも1つの転写材料を膜厚方向に複数回に分割して転写することを特徴とする請求項1~3いずれか記載のパターニング方法。 4. The patterning method according to claim 1, wherein at least one transfer material is transferred in a plurality of times in the film thickness direction by irradiating the light-heat conversion layer in a plurality of times. .
- 少なくとも転写材料と溶媒からなる溶液を区画パターン内に塗布し、前記溶媒を乾燥させた後に前記転写材料を転写することを特徴とする請求項1~4いずれか記載のパターニング方法。 5. The patterning method according to claim 1, wherein a solution comprising at least a transfer material and a solvent is applied in the partition pattern, and the transfer material is transferred after the solvent is dried.
- 少なくとも1つの転写材料が塗布時に溶媒に対する可溶性基をもち、塗布後に熱または光によって前記可溶性基を変換または脱離させた後に前記転写材料を転写することを特徴とする請求項5記載のパターニング方法。 6. The patterning method according to claim 5, wherein at least one transfer material has a soluble group with respect to a solvent at the time of application, and the transfer material is transferred after conversion or elimination of the soluble group by heat or light after application. .
- 請求項1~6いずれか記載の方法により、デバイスを構成する層の少なくとも1層をパターニングすることを特徴とするデバイスの製造方法。 A device manufacturing method comprising patterning at least one of layers constituting a device by the method according to any one of claims 1 to 6.
- 基板と、前記基板上に形成された絶縁層と、少なくとも前記絶縁層の間に形成された薄膜層とを有し、隣り合う絶縁層間の開口幅をA、該開口に対応する領域に存在する薄膜層の幅をE、絶縁層のピッチをPとしたとき、A<E<Pであり、かつ、幅方向に隣り合う薄膜層間の間隔がほぼ一定であるデバイス。 A substrate, an insulating layer formed on the substrate, and at least a thin film layer formed between the insulating layers, wherein the opening width between adjacent insulating layers is A, and exists in a region corresponding to the opening. A device in which A <E <P and the interval between adjacent thin film layers in the width direction is substantially constant, where E is the width of the thin film layer and P is the pitch of the insulating layer.
- A+4(μm)≦E(μm)≦P-10(μm)である請求項8記載のデバイス。 9. The device according to claim 8, wherein A + 4 (μm) ≦ E (μm) ≦ P−10 (μm).
- 薄膜層が発光層であり、デバイスが有機EL素子である請求項8または9記載のデバイス。 The device according to claim 8 or 9, wherein the thin film layer is a light emitting layer and the device is an organic EL element.
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Also Published As
Publication number | Publication date |
---|---|
KR20110025904A (en) | 2011-03-14 |
JP5201278B2 (en) | 2013-06-05 |
US20110089412A1 (en) | 2011-04-21 |
CN102067726B (en) | 2014-06-04 |
EP2299784A4 (en) | 2012-05-30 |
CN102067726A (en) | 2011-05-18 |
JPWO2009154156A1 (en) | 2011-12-01 |
EP2299784A1 (en) | 2011-03-23 |
TWI491307B (en) | 2015-07-01 |
TW201008370A (en) | 2010-02-16 |
JP2013012503A (en) | 2013-01-17 |
JP4992975B2 (en) | 2012-08-08 |
JP2012109638A (en) | 2012-06-07 |
KR101529111B1 (en) | 2015-06-16 |
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