WO2009133076A2 - Cible de pulvérisation, procédé pour la fabrication d'une couche, en particulier d'une couche de tco (oxyde conducteur transparent) et procédé pour la fabrication d'une photopile à couche mince - Google Patents

Cible de pulvérisation, procédé pour la fabrication d'une couche, en particulier d'une couche de tco (oxyde conducteur transparent) et procédé pour la fabrication d'une photopile à couche mince Download PDF

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Publication number
WO2009133076A2
WO2009133076A2 PCT/EP2009/055075 EP2009055075W WO2009133076A2 WO 2009133076 A2 WO2009133076 A2 WO 2009133076A2 EP 2009055075 W EP2009055075 W EP 2009055075W WO 2009133076 A2 WO2009133076 A2 WO 2009133076A2
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WO
WIPO (PCT)
Prior art keywords
value
layer
zno
sputter target
target
Prior art date
Application number
PCT/EP2009/055075
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English (en)
Other versions
WO2009133076A3 (fr
Inventor
Joachim Mueller
Daniel Severin
Markus Kress
Original Assignee
Applied Materials Inc., A Corporation Of The State Of Delaware
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/112,692 external-priority patent/US20090272641A1/en
Priority claimed from EP08155495A external-priority patent/EP2116631A1/fr
Application filed by Applied Materials Inc., A Corporation Of The State Of Delaware filed Critical Applied Materials Inc., A Corporation Of The State Of Delaware
Publication of WO2009133076A2 publication Critical patent/WO2009133076A2/fr
Publication of WO2009133076A3 publication Critical patent/WO2009133076A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • Sputter target method for manufacturing a layer, particularly a TCO (Transparent Conductive Oxide) layer, and method for manufacturing a thin layer solar cell
  • the present invention relates to a sputter target for the use in a reactive sputtering process for depositing a layer on a substrate, comprising at least a first metal element Mel, and a quantity of oxygen. Furthermore, the invention relates to a method for manufacturing a layer on a substrate, particularly a TCO (Transparent Conductive Oxide) layer, including providing an above-mentioned sputter target in a process chamber. The invention also relates to a method for manufacturing a thin layer solar cell, comprising the step of: a) depositing a layer on a substrate using a method mentioned above.
  • TCO Transparent Conductive Oxide
  • Sputter coating is a well-known method for depositing thin films of different materials on a substrate.
  • Sputter processes include eroding material from a target which is then deposited on a substrate.
  • Sputtering processes are often used to deposit metal thin films on a substrate in an inert gas atmosphere, e.g. in an Ar atmosphere.
  • reactive sputtering In order to deposit compound thin films on a substrate, reactive sputtering may be used. In reactive sputtering an appropriate reactive gas is added to the inert gas atmosphere. For example, O 2 may be added to Ar to provide an O 2 / Ar atmosphere. The reactive gas reacts with the sputtered material to form a thin compound film on the surface of the substrate.
  • a further negative effect of reactive sputtering in an oxidic atmosphere is that the substrate is bombarded with negatively charged oxygen ions generated on the surface of the target, particularly at low deposition rates.
  • oxygen ions generated on the surface of the target, particularly at low deposition rates.
  • a ZnO: Al layer deposited by reactive sputtering has been hit by a large number of oxygen ions, the conductivity of the layer will be reduced.
  • the ZnO: Al layer has to be etched in hydrochloric acid to form a required pattern.
  • the bombardment with oxygen ions deteriorates the etchability of the ZnO: Al layer.
  • a ceramic target e.g. a ZnO target
  • a ZnO target for producing a ZnO film on a substrate as a TCO (transparent conductive oxide) layer for a thin layer solar cell.
  • TCO transparent conductive oxide
  • the deposition rate is low and thus the bombardment with oxygen ions is high.
  • a sputter target and a method for manufacturing a layer particularly a TCO (transparent conductive oxide) layer
  • the amount/rate of oxygen deposited in the coating film may be controlled while maintaining a high sputter rate, low oxygen bombardment of the deposited film and a stable coating process.
  • a sputter target for the use in a reactive sputtering process for depositing a layer on a substrate, particularly a TCO (Transparent Conductive Oxide) layer, according to the invention comprises a ceramic target comprising at least a first metal element Mel, and a quantity of oxygen, wherein said quantity of oxygen is a sub-stoichiometric quantity.
  • said sputter target comprises a ceramic material including MeIO x , wherein x ⁇ s, and s being a rational number corresponding to the stoichiometric quantity of oxygen in the MeIO x material.
  • a sub-stoichiometric ceramic target e.g. a ZnO x target with x ⁇ 1 is provided.
  • the sputter process is performed in a reactive Ar/O 2 atmosphere.
  • the inventors have found out that by using a sub-stoichiometric target some advantages of ceramic targets may be combined with advantages of a metallic target.
  • the process may be stabilized due to the fact that ceramic targets contain a particular amount of oxygen, i.e. there is an intrinsic amount of oxygen which prevents the targets from changing their characteristics significantly within a small variation of the reactive oxygen flow in the process chamber.
  • the flow/amount of oxygen provided during the process may be varied. This allows varying the deposition rate, particularly to increase the deposition rate, while decreasing the bombardment of the coating film with oxygen ions.
  • the stoichiometry between Zn and O in the deposited film may be adjusted to a predetermined value.
  • inventive target oxidic layers e.g. TCO (transparent conductive oxide) layers may be deposited in an improved process.
  • the sputter target comprises a ceramic material including ZnO x , wherein 0.3 ⁇ x ⁇ 1, with Zn as the first metal element.
  • the present invention is not limited to particular oxidic sputter processes, but may be applied to various reactive sputter processes.
  • said sputter target comprises a ceramic material including TiO x , wherein x ⁇ 2.
  • said sputter target includes an amount of a second metal Me2.
  • a TCO layer doped with a metal e.g. Al and/or Nb
  • the amount of Al and/or Nb in the ceramic layer, e.g. ZnO or TiO 2 ensures the proper functionality of the coating film.
  • the metal doping increases the conductivity of the deposited TCO layer.
  • the doping material is already contained in the target material in order to be transferred to and incorporated in the coating film during the reactive sputter process.
  • doping materials are included in the target material in order to increase the conductivity.
  • these doping materials are just auxiliary materials not intended to be part of the coating film.
  • coating substances like boron (B) or fluorine (F) are contained in a target in order to increase the conductivity of the target.
  • B boron
  • F fluorine
  • the quality of the n-conductive ZnO: Me2 layer of a thin layer solar cell is considerably improved. Furthermore, in solar cell applications it is necessary to provide an etching step, particularly by using hydrochloric acid, to structure the TCO layer.
  • the inventors have found out that when using the sputter target and method according to the invention for manufacturing a thin layer solar cell, the process of etching may be improved.
  • the bombardment of the n-conductive layer with oxygen ions during the deposition process may be controlled to be sufficiently low.
  • said sputter target comprises a material including MeIO x : Me2, wherein x ⁇ s, and s being a rational number corresponding to the stoichiometric quantity of oxygen in the MeIO x material.
  • Said sputter target may comprise a ceramic material including ZnO x : Me2, wherein 0.3 ⁇ x ⁇ 1.
  • said sputter target comprises a ceramic material including TiO x : Me2, wherein x ⁇ 2.
  • the second metal material Me2 included in said target is Al and/or Nb and/or Ga and/or B and/or In and/or Ta. It is particularly preferred to use any of Ga, B, In and Nb. It could be seen that these doping materials show special properties in the coating layer. Particularly, it could be seen that when using Ga, B, In and Nb doping materials, the process of etching (which is essential in solar cell production) may be improved.
  • the amount of Al and/or B is determined by a ratio between Al 2 O 3 and B 2 O 3 , respectively, and ZnO in a range between a first value of 0.2 wt.-% and a second value of 6 wt.-%, the first value and the second value, respectively, referring to a stoichiometric ZnO material.
  • the amount of Al and/or B is determined by a ratio between Al 2 O 3 and B 2 O 3 , respectively, and ZnO in a range between a first value of 0.5 wt.-% and a second value of 2 wt.-%, the first value and the second value, respectively, referring to a stoichiometric ZnO material.
  • the amount of Ga is determined by a ratio between Ga 2 O 3 and ZnO in a range between a first value of 0.5 wt.-% and a second value of 10 wt.-%, the first value and the second value, respectively, referring to a stoichiometric ZnO material.
  • the amount of Ga may particularly be determined by a ratio between Ga 2 O 3 and ZnO in a range between a first value of 0.5 wt.-% and a second value of 6 wt.-%, the first value and the second value, respectively, referring to a stoichiometric ZnO material.
  • the amount of In may be determined by a ratio between In 2 O 3 and ZnO in a range between a first value of 1 wt.-% and a second value of 20 wt.-%, the first value and the second value, respectively, referring to a stoichiometric ZnO material. It is preferred that the amount of In is determined by a ratio between In 2 O 3 and ZnO in a range between a first value of 3 wt.-% and a second value of 12 wt.-%, the first value and the second value, respectively, referring to a stoichiometric ZnO material.
  • the amount of Nb may be determined by a ratio between Nb 2 O 5 and ZnO in a range between a first value of 0.005 wt.-% and a second value of 5 wt.-%, the first value and the second value, respectively, referring to a stoichiometric ZnO material.
  • the amount of Nb may be determined by a ratio between Nb 2 O 5 and TiO 2 in a range between a first value of 5 wt.-% and a second value of 60 wt.-%, particularly 30 wt.-%, the first value and the second value, respectively, referring to a stoichiometric TiO 2 material.
  • the amount of Ta may be determined by a ratio between Ta 2 O 5 and TiO 2 in a range between a first value of 5 wt.-% and a second value of 60 wt.-%, the first value and the second value, respectively, referring to a stoichiometric TiO 2 material.
  • a sputter target for the use in a reactive sputtering process for depositing a layer on a substrate comprises a target including ZnO x , wherein said quantity of oxygen is a sub-stoichiometric quantity with 0.3 ⁇ x ⁇ 1, wherein said target has characteristics of a ceramic target for providing a stable process at a predetermined ratio of oxygen in a process chamber, and characteristics of a metallic target for providing a defined sputter rate.
  • the ratio of oxygen in the process chamber is set at a value that the sputter rate exceeds the sputter rate of a corresponding process using a stoichiometric target.
  • the process is just the same quite stable.
  • the process may be tuned such that the ratio of oxygen in the deposited layer may be significantly lower than the ratio of oxygen in a layer deposited in a corresponding process using a stoichiometric target or equal to the ratio of oxygen in a layer deposited in a corresponding process using a stoichiometric target.
  • the deposited layer when using the target and method according to the invention has a sub-stoichiometric or a stoichiometric content of oxygen, depending on the process parameters, e.g.
  • the oxygen content in the reactive gas is very uncritical (i.e. it is stable) with respect to variations of the oxygen content.
  • the reactivity of Zn and O may be controlled to be stable.
  • experiments showed that the structure of a ZnO layer deposited on a substrate in accordance with the invention was much better in the application of solar cells. The solar cells turned out to have an increased efficiency compared with cells produced with conventional manufacturing methods.
  • the inventive method for manufacturing a layer on a substrate, particularly a TCO (Transparent Conductive Oxide) layer comprises the steps of: a) Providing a sputter target as described above in a process chamber; b) Providing an atmosphere including at least a ratio of oxygen in said process chamber; c) Sputtering coating material from said sputter target; and d) Depositing said TCO layer on said substrate in a reactive sputtering process.
  • said layer to be manufactured is a layer including a first metal element Mel, particularly Zn or Ti, of the periodic table, and oxygen.
  • the oxygen is contained in the layer in a predetermined substoichiometric or stoichiometric quantity.
  • the TCO layer is a ZnO: Me2 layer, wherein Me2 is a second metal element Me2, especially Al and/or Ga and/or B and/or In and/or Nb. It is particularly preferred to use any of Ga, B In and Nb.
  • the TCO layer may also be a TiO 2 : Me2 layer, wherein Me2 is a second metal element Me2, especially Nb and/or Ta.
  • Said atmosphere provided in step b) may be a reactive Ar/O 2 atmosphere.
  • the flow/ content of O 2 in the atmosphere within the coating chamber may be varied to provide a process having a high deposition rate, high stability, and the coating film comprises a predetermined (e. g. a sub-stoichiometric or stoichiometric) amount/concentration of oxygen.
  • a method for manufacturing a thin layer solar cell according to the invention comprises the steps of: a) Depositing a layer on a substrate by use of a method as described above. The layer may be deposited on top of another layer deposited on a substrate, e.g. on top of a buffer layer.
  • Said method may include a further step: b) Etching said layer. Particularly, etching is performed in HCl for generating a rough surface on top of the layer. Afterwards, an absorber layer (system) of a solar cell may be deposited on top of the roughened surface. Another layer or layer system/ layer stack may be deposited on top of the first layer, e.g. an absorber layer and a contact layer. This layer stack may include additional dielectric layers in order to improve the cell efficiency due to an enhanced optical performance.
  • Said ratio of oxygen in said process chamber is varied to provide a sputter process having a defined sputter rate and a defined rate of oxygen bombardment of said deposited layer.
  • the object of using a sub-stoichiometric target is to provide a stable coating process, reduce oxygen bombardment of the deposited layer during the deposition process and thus obtain an improved layer quality.
  • the deposition rate may be increased because the process may be tuned to be stable in a larger range of oxygen provided in the reactive atmosphere.
  • the stoichiometry of the layer can be varied quite easily and in a large range compared with conventional processes due to the fact that a) the content of oxygen in the reactive atmosphere originating from the target is lower than in the case of a stoichiometric target, and b) the oxygen content in the reactive atmosphere may be controlled to set the oxygen content in the layer between a substoichiometric value and a stoichiometric value.
  • a solar cell module according to the invention is particularly produced in a process as described above and comprises: a ZnO x : Me2 layer, wherein Me2 is selected from Al, Ga, B and In.
  • the process of etching the ZnO x : Me2 layer having Al, Ga, B, In and/or Nb as Me2 could be improved when using these doping materials because the selection of a particular doping material has an influence on the etching process thus improving the properties of the solar cell.
  • Figs. Ia and Ib schematic diagrams illustrating the use of a metallic sputter target according to the prior art
  • Figs. 2a and 2b schematic diagrams illustrating the use of a ceramic ZnO target according to the prior art
  • Figs. 3a and 3b schematic diagrams illustrating the use of a ZnO x : Al target according to the present invention.
  • Figs. Ia and Ib illustrate the hysteresis and the stoichiometric proportion, respectively, depending on the O 2 flow when depositing a ZnO film from a metallic target in a reactive sputter process.
  • the deposition rate R is indicated responsive to the oxygen flow.
  • the maximum deposition rate R is reached immediately before reaching an instable transition point T.
  • the deposition rate R decreases rapidly to a more or less stable value R s .
  • the deposition rate is quite low while the process is stable over a wide range.
  • the deposition rate does not vary considerably (second branch of the hysteresis loop). Only when approaching the area of oxygen flow indicated with (1) the deposition rate increases to converge with the first branch of the hysteresis loop in the area
  • the process is quite stable.
  • the bombardment of the coating film with oxygen ions is quite high thus reducing the performance of the ZnO layer and the possibility of achieving a sufficient rough surface structure after etching of the layer. Therefore, it is preferred to sputter near the instable transition point T in first branch of the hysteresis loop.
  • Fig. Ib depicts the stoichiometry S between O and Zn in the coating film.
  • the oxygen flow is increased, thus increasing the oxygen ratio in the deposited film (first branch of the hysteresis loop).
  • the stoichiometric relation between O and Zn reaches the value of 1 when exceeding the transition point T into the area (3).
  • the stoichiometric value of 1 is considerably maintained (second branch of the hysteresis loop) until reducing the oxygen flow into area (1).
  • Fig. 2a and 2b illustrate the deposition rate R and the stoichiometry of oxygen in a ZnO coating film, respectively, depending on the oxygen flow in the coating chamber when depositing a ZnO film from a ceramic target.
  • the deposition rate R and the stoichiometry are substantially constant over a wide range of oxygen flow, i.e. the process is quite stable.
  • transparent conductive oxide (TCO) layers e. g. ZnO layers doped with an amount of a metal material (Me2), are required.
  • Fig. 3a illustrates the deposition rate R of a ZnO: Me2 layer depending on the oxygen flow in a sputtering process according to the present invention.
  • a sub- stoichiometric ZnO x : Me2 target, with 0.3 ⁇ x ⁇ 1, is used in a reactive sputtering process in an Ar/O 2 atmosphere.
  • the upper line x ⁇ 1 indicates the deposition rate R when using the inventive target and process.
  • a higher deposition rate however, entails a lower bombardment of the deposited layer with oxygen ions. Therefore, the quality of the ZnO: Me2 layer is improved as far as the conductivity and the etchability of the layer are concerned.
  • the stoichiometry of oxygen relative to Zn in the coating film may be adjusted in a wider range when using the target x ⁇ l according to the invention.
  • the coating layer has a sub-stoichiometric oxygen content
  • the coating film contains a stoichiometric content of oxygen.
  • These considerations may be transferred to other targets/ deposited layers, e.g. using Al, Ga, B, In or Ta doping materials. It has been recognized that these doping materials may contribute to reduce the oxygen bombardments of a layer. This is particularly important when manufacturing solar cell modules including an etching process. The etching process could be considerably improved (and thus the quality of a solar cell) due to the reduction of ion/oxygen bombardment of the ZnO x : Me2 layer during the deposition process.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
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  • General Physics & Mathematics (AREA)
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  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Selon la présente invention, une cible de ZnOx:Al céramique sous-stœchiométrique, avec 0,3 < x < 1, est utilisée pour le dépôt d'une couche de ZnO:Al dans un procédé de pulvérisation réactive. Le procédé est effectué dans une atmosphère d'Ar/O2. Le schéma représente la vitesse de dépôt R en fonction du débit d'oxygène dans un procédé de pulvérisation selon la présente invention, par comparaison avec un procédé de pulvérisation classique utilisant une cible de ZnO stœchiométrique. La ligne supérieure x < 1 représente la vitesse de dépôt R lorsqu'on utilise la cible et le procédé de l'invention. La ligne inférieure x = 1, pour comparaison seulement, représente la vitesse de dépôt R lorsqu'on utilise une cible de ZnO céramique stœchiométrique. On peut constater d'après le schéma que les deux procédés sont assez stables dans la mesure où il n'y a pas de pentes raides lorsqu'on fait varier le débit d'oxygène. Cependant, la ligne x < l est au-dessus de la ligne x = l. Par conséquent, on peut choisir un point de travail P qui a une vitesse de dépôt R supérieure à celle d'un point de travail P' correspondant d'une cible céramique correspondante. Une vitesse de dépôt supérieure, cependant, implique un plus faible bombardement de la couche déposée par des ions de l'oxygène. Par conséquent, la qualité de la couche de ZnO:Al est améliorée en ce qui concerne la conductivité et l'aptitude à la gravure de la couche.
PCT/EP2009/055075 2008-04-30 2009-04-27 Cible de pulvérisation, procédé pour la fabrication d'une couche, en particulier d'une couche de tco (oxyde conducteur transparent) et procédé pour la fabrication d'une photopile à couche mince WO2009133076A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/112,692 US20090272641A1 (en) 2008-04-30 2008-04-30 Sputter target, method for manufacturing a layer, particularly a tco (transparent conductive oxide) layer, and method for manufacturing a thin layer solar cell
EP08155495.8 2008-04-30
US12/112,692 2008-04-30
EP08155495A EP2116631A1 (fr) 2008-04-30 2008-04-30 Cible de pulvérisation

Publications (2)

Publication Number Publication Date
WO2009133076A2 true WO2009133076A2 (fr) 2009-11-05
WO2009133076A3 WO2009133076A3 (fr) 2010-03-04

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012036720A1 (fr) * 2010-09-17 2012-03-22 Guardian Industries Corp. Article revêtu ayant une couche de germination à base d'oxyde de zinc dopée au bore dotée d'une durabilité améliorée sous la couche fonctionnelle et procédé de fabrication associé
EP2584062A1 (fr) * 2011-10-19 2013-04-24 Heraeus Materials Technology GmbH & Co. KG Cible de circuits et son utilisation
CN103366866A (zh) * 2012-03-30 2013-10-23 和鑫光电股份有限公司 复合透明氧化物薄膜及其制造方法
US8815420B2 (en) 2010-09-17 2014-08-26 Guardian Industries Corp. Coated article having zinc oxide seed layer with reduced stress under functional layer and method of making the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060159932A1 (en) * 2005-01-19 2006-07-20 Guardian Industries Corp. Method of making low-E coating using ceramic zinc inclusive target, and target used in same
JP2007238375A (ja) * 2006-03-08 2007-09-20 Tosoh Corp ＺｎＯ−Ａｌ２Ｏ３系焼結体、スパッタリングターゲット及び透明導電膜の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060159932A1 (en) * 2005-01-19 2006-07-20 Guardian Industries Corp. Method of making low-E coating using ceramic zinc inclusive target, and target used in same
JP2007238375A (ja) * 2006-03-08 2007-09-20 Tosoh Corp ＺｎＯ−Ａｌ２Ｏ３系焼結体、スパッタリングターゲット及び透明導電膜の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012036720A1 (fr) * 2010-09-17 2012-03-22 Guardian Industries Corp. Article revêtu ayant une couche de germination à base d'oxyde de zinc dopée au bore dotée d'une durabilité améliorée sous la couche fonctionnelle et procédé de fabrication associé
US8808882B2 (en) 2010-09-17 2014-08-19 Guardian Industries Corp. Coated article having boron doped zinc oxide based seed layer with enhanced durability under functional layer and method of making the same
US8815420B2 (en) 2010-09-17 2014-08-26 Guardian Industries Corp. Coated article having zinc oxide seed layer with reduced stress under functional layer and method of making the same
EP2584062A1 (fr) * 2011-10-19 2013-04-24 Heraeus Materials Technology GmbH & Co. KG Cible de circuits et son utilisation
WO2013056968A1 (fr) * 2011-10-19 2013-04-25 Heraeus Materials Tech Gmbh Cible de pulvérisation cathodique et son utilisation
CN103366866A (zh) * 2012-03-30 2013-10-23 和鑫光电股份有限公司 复合透明氧化物薄膜及其制造方法

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